CLAIMS
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`1. Asemiconductorstructure, comprising:
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`a first base having a first face, wherein the first base is provided with an electrical
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`connection columnprotruding from thefirst face;
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`a second base having a second face, wherein a conductive column is provided in the
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`second base, and a first groove and a second groove are further provided at the second face,
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`wherein the first groove communicates with the second groove,the first groove is located above
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`the conductive column and exposes at least a part of a top surface of the conductive column,
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`and the second groove exposesatleast a part of a side surface of the conductive column;
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`the second face is bonded to the first face, a protruding portion of the electrical
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`connection column is located in the second groove, and a part of a side surface of the electrical
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`connection column and a part of the side surface of the conductive column overlap in a
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`staggered way in a direction perpendicularto the first face or the second face; and
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`a welded structure, wherein at least a part of the welded structure is filled in the first
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`groove, and at least a further part of the welded structure is located between the electrical
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`connection column and a bottom surface of the second groove.
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`2. The semiconductor structure according to claim 1, wherein, the electrical connection column
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`comprises: a conductive body, a first diffusion barrier layer located on a bottom surface and
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`side surfaces of the conductive body, and a first metal protective layer located on a top surface
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`of the conductive body, wherein the first metal protective layer is located between the
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`conductive body and the welded structure, and a part of the conductive body is located in the
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`second groove.
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`3. The semiconductor structure according to claim 2, wherein a material of the conductive body
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`comprises copper or aluminum, and a material of the first diffusion barrier layer comprises
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`tantalum,titanium, titanium nitride or tantalum nitride.
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`4. The semiconductor structure according to claim 2, wherein the first diffusion barrier layer
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`and the first metal protective layer further have portions protruding from the top surface of the
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`conductive body.
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`5. The semiconductor structure according to claim 4, wherein the semiconductor structure
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`further comprisesa first electroplating seed layer located between the conductive body and the
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`first diffusion barrier layer.
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`6. The semiconductor structure according to claim 1, wherein a ratio of a depth of the first
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`groove to a depth of the second grooveis in a range of 1:1 to 1:10,in the direction perpendicular
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`to the first face.
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`7. The semiconductor structure according to claim 1, wherein the welded structure is further
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`located between the electrical connection column and sidewalls of the second groove and
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`between the conductive column andthe electrical connection column.
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`8. The semiconductorstructure according to claim 1, wherein a material of the welded structure
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`comprisestin, tin-silver alloy, or the like.
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`9. The semiconductor structure according to claim 1, further comprising a second diffusion
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`barrier layer located on a bottom surface and a sidewall of the first groove, and also located on
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`the bottom surface and a sidewall of the second groove, as well as located on the top surface of
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`the conductive column exposed by the first groove and the side surface of the conductive
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`column exposed by the second groove.
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`10. The semiconductor structure according to claim 9,
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`further comprising: a second
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`electroplating seed layer located between the second diffusion barrier layer and the bottom
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`surface, the sidewall of the first groove, and also located between the second diffusion barrier
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`layer and the bottom surface, the sidewall of the second groove, as well as between the second
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`diffusion barrier layer and the top surface of the conductive column exposedbythefirst groove,
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`and between the second diffusion barrier layer and the side surface of the conductive column
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`exposed by the second groove.
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`11. The semiconductor structure according to claim 1, wherein a sum of widths of the first
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`groove and the second grooveis 2 to 3 times a width of the conductive column in a direction
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`perpendicular to an extension direction of the conductive column.
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`12. A method for preparing a semiconductorstructure, comprising:
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`providing a first base having a first face, wherein the first base is provided with an
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`electrical connection column protruding from thefirst face;
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`providing a second base having a second face, wherein a conductive columnis provided
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`in the second base, and a first groove and a second grooveare further provided at the second
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`face, wherein the first groove communicates with the second groove,the first groove is located
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`above the conductive column and exposesat least a part of a top surface of the conductive
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`column,and the second groove exposesat least a part of a side surface of the conductive column;
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`bonding the second face to the first face, wherein a protruding portion of the electrical
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`connection column is located in the second groove, and a part of a side surface of the electrical
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`connection column and a part of the side surface of the conductive column overlap in a
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`staggered way in a direction perpendicularto the first face or the second face; and
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`forming a welded structure, wherein at least a part of the welded structure is filled in the
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`first groove, and at least a further part of the welded structure is located between the electrical
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`connection column and a bottom surface of the second groove.
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`13. The method for preparing a semiconductorstructure according to claim 12, wherein forming
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`the electrical connection column comprises:
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`forminga first diffusion barrier layer; and
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`forming a conductive body and a first metal protective layer located on a top surface of
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`the conductive body, wherein the first metal protective layer is also located between the
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`conductive body and the weldedstructure, and the first diffusion barrier layer is located at least
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`on side surfaces and a bottom surface of the conductive body.
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`14. The method for preparing a semiconductorstructure according to claim 12, wherein a sum
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`of widths of the first groove and the second groove formed is 2 to 3 times a width of the
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`conductive column, in a direction perpendicular to an extension direction of the conductive
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`column.
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`15. The method for preparing a semiconductorstructure according to claim 12, wherein a ratio
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`of a depth ofthe first groove to a depth of the second groove formedis in a range of 1:1 to 1:10,
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`in the direction perpendicularto the first face.
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`16. The method for preparing a semiconductor structure according to claim 12, further
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`comprising: before bonding the second faceto the first face, forming a second diffusion barrier
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`layer, wherein the second diffusion barrier layer is located on a bottom surface and a sidewall
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`of the first groove, and is also located on the top surface of the conductive column exposed by
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`the first groove and the side surface of the conductive column exposed by the second groove.
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`17. The method for preparing a semiconductorstructure according to claim 12, wherein forming
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`the welded structure comprises: forming an initial welded structure located on a top surface of
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`the electrical connection column; and
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`annealing the initial welded structure during bonding the secondface tothe first face to
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`form the welded structure.
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