www.uspto.gov
`
`UNITED STATES DEPARTMENT OF COMMERCE
`United States Patent and TrademarkOffice
`Address; COMMISSIONER FOR PATENTS
`P.O. Box 1450
`Alexandria, Virginia 22313-1450
`
`16/460,035
`
`07/02/2019
`
`Peter John COUSINS
`
`10031.004212
`
`5633
`
`Okamoto & Benedicto LLP (SunPower)
`P.O. Box 641330
`San Jose, CA 95164-1330
`
`PILLAY, DEVINA
`
`ART UNIT
`
`1726
`
`MAIL DATE
`
`07/06/2020
`
`PAPER NUMBER
`
`DELIVERY MODE
`
`PAPER
`
`Please find below and/or attached an Office communication concerning this application or proceeding.
`
`The time period for reply, if any, is set in the attached communication.
`
`PTOL-90A (Rev. 04/07)
`
`

`

`
`
`Disposition of Claims*
`21-40 is/are pending in the application.
`)
`Claim(s)
`5a) Of the above claim(s) ___ is/are withdrawn from consideration.
`CC) Claim(s)
`is/are allowed.
`Claim(s) 21-40 is/are rejected.
`S)
`) O Claim(s)___is/are objected to.
`C) Claim(s
`are subjectto restriction and/or election requirement
`)
`S)
`* If any claims have been determined allowable, you maybeeligible to benefit from the Patent Prosecution Highway program at a
`participating intellectual property office for the corresponding application. For more information, please see
`http://www.uspto.gov/patents/init_events/pph/index.jsp or send an inquiry to PPHfeedback@uspto.gov.
`
`) )
`
`Application Papers
`10) The specification is objected to by the Examiner.
`11)0) The drawing(s) filedon__ is/are: a)) accepted or b)() objected to by the Examiner.
`Applicant may not request that any objection to the drawing(s) be held in abeyance. See 37 CFR 1.85(a).
`Replacement drawing sheet(s) including the correction is required if the drawing(s) is objected to. See 37 CFR 1.121 (d).
`
`Priority under 35 U.S.C. § 119
`12)0) Acknowledgment is made of a claim for foreign priority under 35 U.S.C. § 119(a)-(d)or (f).
`Certified copies:
`c)X None ofthe:
`b)L) Some**
`a)L) All
`1... Certified copies of the priority documents have been received.
`2.1.) Certified copies of the priority documents have been received in Application No.
`3.1.) Copies of the certified copies of the priority documents have been received in this National Stage
`application from the International Bureau (PCT Rule 17.2(a)).
`* See the attached detailed Office action for a list of the certified copies not received.
`
`Attachment(s)
`
`1)
`
`Notice of References Cited (PTO-892)
`
`2) (J Information Disclosure Statement(s) (PTO/SB/08a and/or PTO/SB/08b)
`Paper No(s)/Mail Date
`U.S. Patent and Trademark Office
`
`3) (J Interview Summary (PTO-413)
`Paper No(s)/Mail Date
`(Qj Other:
`
`4)
`
`PTOL-326 (Rev. 11-13)
`
`Office Action Summary
`
`Part of Paper No./Mail Date 20200526
`
`Application No.
`Applicant(s)
`16/460,035
`COUSINS, Peter John
`
`Office Action Summary Art Unit|AIA (FITF) StatusExaminer
`DEVINA PILLAY
`1726
`No
`
`
`
`-- The MAILING DATEofthis communication appears on the cover sheet with the correspondence address --
`Period for Reply
`
`A SHORTENED STATUTORY PERIOD FOR REPLYIS SET TO EXPIRE 3 MONTHS FROM THE MAILING
`DATE OF THIS COMMUNICATION.
`Extensions of time may be available underthe provisions of 37 CFR 1.136(a). In no event, however, may a reply betimely filed after SIX (6) MONTHSfrom the mailing
`date of this communication.
`If NO period for reply is specified above, the maximum statutory period will apply and will expire SIX (6) MONTHSfrom the mailing date of this communication.
`-
`- Failure to reply within the set or extended period for reply will, by statute, cause the application to become ABANDONED (35 U.S.C. § 133}.
`Any reply received by the Office later than three months after the mailing date of this communication, evenif timely filed, may reduce any earned patent term
`adjustment. See 37 CFR 1.704(b).
`
`Status
`
`1) Responsive to communication(s) filed on 09/17/2019.
`LC} A declaration(s)/affidavit(s) under 37 CFR 1.130(b) was/werefiled on
`
`2a)(J This action is FINAL. 2b))This action is non-final.
`3) An election was madeby the applicant in responseto a restriction requirement set forth during the interview
`on
`; the restriction requirement and election have been incorporated into this action.
`4\(Z Since this application is in condition for allowance except for formal matters, prosecution as to the merits is
`closed in accordance with the practice under Exparte Quayle, 1935 C.D. 11, 453 O.G. 213.
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 2
`
`DETAILED ACTION
`
`Notice of Pre-AlA or AIA Status
`
`The present application is being examined under the pre-AlA first to invent
`
`provisions.
`
`Claim Rejections - 35 USC § 103
`
`In the event the determination of the status of the application as subject to AIA 35
`
`U.S.C. 102 and 103 (or as subject to pre-AIA 35 U.S.C. 102 and 103)is incorrect, any
`
`correction of the statutory basis for the rejection will not be considered a new ground of
`
`rejection if the prior art relied upon, and the rationale supporting the rejection, would be
`
`the same under either status.
`
`The following is a quotation of pre-AIA 35 U.S.C. 103(a) which forms the basis
`
`for all obviousnessrejections set forth in this Office action:
`
`(a) A patent may not be obtained though the invention is not identically disclosed or described
`as set forth in section 102, if the differences between the subject matter sought to be patented
`andthe prior art are such that the subject matter as a whole would have been obvious at the
`time the invention was madeto a person having ordinaryskill in the art to which said subject
`matter pertains. Patentability shall not be negatived by the manner in whichthe invention was
`made.
`
`The factual inquiries set forth in Graham v. John Deere Co., 383 U.S. 1, 148
`
`USPQ 459 (1966), that are applied for establishing a background for determining
`
`obviousness under pre-AlA 35 U.S.C. 103(a) are summarized as follows:
`
`1. Determining the scope and contents of the prior art.
`
`2. Ascertaining the differences between the prior art and the claims at issue.
`
`3. Resolving the level of ordinary skill in the pertinent art.
`
`4. Considering objective evidence presentin the application indicating
`
`obviousness or nonobviousness.
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 3
`
`This application currently names joint inventors. In considering patentability of the
`
`claims under pre-AlA 35 U.S.C. 103(a), the examiner presumesthat the subject matter
`
`of the various claims was commonly ownedatthe time any inventions covered therein
`
`were made absent any evidence to the contrary. Applicant is advised of the obligation
`
`under 37 CFR 1.56 to point out the inventor and invention dates of each claim that was
`
`not commonly ownedat the time a later invention was made in order for the examiner to
`
`consider the applicability of pre-AIA 35 U.S.C. 103(c) and potential pre-AIA 35 U.S.C.
`
`102(e), (f) or (g) prior art under pre-AlA 35 U.S.C. 103(a).
`
`Claims 21-23 is/are rejected under pre-AlA 35 U.S.C. 103(a) as being
`
`unpatentable over Meier (US 6,262,359) in view of Okayasu (JP07-106611, Human
`
`Translation) in view of Borden (WO 2009/094578 A2) and in view of Wenham
`
`(6,429,037 B1) in view of Jordan (US 2005/0268963 A1).
`
`Regarding claims 21 and 23, Meier discloses a solar cell comprising (see Fig.
`
`3D, C5/L38-C6/L55):
`
`a n-typesilicon substrate (218 n-type, C5/L30-42) having a front surface that
`
`faces the sun to collect solar radiation during normal operation and a back surface
`
`opposite the front surface;
`
`an anti-reflection (214) coating on the front surface of the solarcell;
`
`an emitter (220 p-type) forming a backside junction with the substrate;
`
`a front electrode disposed over the front surface of the substrate (212);
`
`a back electrode disposed over the back surface of the substrate (222)
`
`a front surface field region on the front surface (216 high doped concentration
`
`area n+), on the front surface of the substrate.
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 4
`
`However, Meier does notdisclose that there is a textured surface on the N-type
`
`silicon substrate on the front side of the solar cell.
`
`Jordan discloses that the front surface of the solar cell is textured ([0022]). In
`
`addition, Jordan discloses that texturizing the front surface increases light absorption
`
`([0022]).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the front surface of Meier by texturizing the front surface as
`
`disclosed by Jordan becauseit increases light adsorption.
`
`However, Meier does not disclose that the emitter is a polysilicon emitter or that
`
`the front surfacefield is formed of polysilicon and that there is a tunnel dielectric formed
`
`between the emitter and the back surface of the substrate or that there is a tunnel
`
`dielectric formed between the front surface field and the substrate.
`
`Okayasu disclosesthat instead of forming an emitter or surface field from a
`
`portion of a substrate which is doped, an emitter or surface field can be formed using a
`
`doped polysilicon layer ([0005] [0009], Abstract) and by forming an emitter or surface
`
`field this way the thickness can be more accurately controlled and it prevents generation
`
`of floating foreign matter ([0008] [0009)).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to replace the method of forming the emitter/front surface field from a portion
`
`of a substrate of Meier and instead forming the emitter and front surface field by using a
`
`dopedpolysilicon layer as disclosed by Okayasu because the thickness can be more
`
`accurately controlled and it prevent generation of floating foreign matter.
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 5
`
`However, modified Meier does not discloses a tunneling dielectric oxide between
`
`the emitter/front surface field and the substrate.
`
`Borden discloses that tunnel oxides can be usedin solar cells between doped
`
`polysilicon and monocrystalline substrates [0016] and can be formed on boththe front
`
`and back surfaces of a monocrystalline substrate.
`
`Furthermore, Borden discloses that by providing the tunneling layer it prevents
`
`epitaxial growth of the emitter layer and further it protects the surface from plasma
`
`damage of the deposited emitter layer [0015].
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the interface between polycrystalline layers and monocrystalline
`
`substrate back and front surfaces of modified Meier by having a tunneling oxide at the
`
`interfaces becauseit prevents epitaxial growth of the emitter layer and further it protects
`
`the crystalline surface from plasma damage of the deposited emitter layer.
`
`Modified Meier discloses a first tunnel dielectric between the emitter and back
`
`surface and a second tunnel dielectric at the front surface of the substrate.
`
`However, modified Meier does not disclose that doped region in the substrate.
`
`Wenham discloses a solar cell wherein the area beneath point contacts includes
`
`areas of high doping whichis important for reducing contact resistance (see Fig. 5,
`
`portions 18 and 23) (C1/L25-41).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the front surface field formed in the substrate of modified Meier by
`
`adding in highly doped regions under the metallic contacts as disclosed by Wenham
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 6
`
`because doing so reduces the contact resistance and will improve the efficiency of the
`
`solar cell.
`
`Modified Meier now discloses a p-type polysilicon emitter and an n+-type
`
`polysilicon FSF.
`
`Regarding claim 22, modified Meier discloses all of the claim limitations as set
`
`forth above.
`
`In addition Meier discloses that the antireflective layer comprises silicon nitride
`
`(C6/L20-25).
`
`Claims 24, 25, and 27-29 is/are rejected under pre-AlA 35 U.S.C. 103(a) as
`
`being unpatentable over Meier (US 6,262,359) in view of Okayasu (JP07-106611,
`
`Human Translation) in view of Borden (WO 2009/094578 A2) andin further view of
`
`Wenham (6,429,037 B1) in view of Jordan (US 2005/0268963 A1) as applied to
`
`claims 21-23 above andin further view of Agnostinelli (US 2009/0301557 A1).
`
`Regarding claim 24, 25, 27, 28, modified Meier discloses all of the claim
`
`limitations as set forth above.
`
`However, Meier does not disclose a dielectric over a polysilicon emitter.
`
`Agnostinelli discloses a back contact structure which comprises a
`
`dielectric/passivation layer structure formed on the back surface of the solar cell which
`
`is patterned and back contacts touch the rear doped surfaceof the solar cell and a
`
`continuous back contact layer is formed over the dielectric (SiOz [0116])/passivation
`
`stack ([0049][0048][01 16)).
`
`It would have been obvious to one of ordinary skill at the time of the invention to
`
`modify the solar cell of Meier by having a dielectric/passivation layer structure formed
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 7
`
`on the back surfaceof the solar cell which is patterned and back contacts touch the rear
`
`doped surface of the solar cell and a continuous back contact layer is formed over the
`
`dielectric as disclosed Agnostinelli becauseit will improve the reflection and absorption
`
`of light by the solar cell and furthermore improve the passivation of the rear surface.
`
`Regarding claim 29, modified Meier discloses all of the claim limitations as set
`
`forth above.
`
`Meierdiscloses that the front contact can besilver (212, C7/L10-15).
`
`However, Meier does not disclose that the electrode that is in contact with the p-
`
`type polysilicon layer is silver.
`
`Okayasu discloses that the back electrode on the polysilicon emitter is formed of
`
`a silver electrode [0044].
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to replace the aluminum electrode of Meier with the silver electrode of
`
`Okayasu becauseone of ordinary skill in the art would have been able to carry out such
`
`a substitution, and the results would be reasonably predictable.
`
`Claim 26 is/are rejected under pre-AlA 35 U.S.C. 103(a) as being
`
`unpatentable over Meier (US 6,262,359) in view of Okayasu (JP07-106611, Human
`
`Translation) in view of Borden (WO 2009/094578 A2) and in further view of
`
`Wenham (6,429,037 B1) in view of Jordan (US 2005/0268963 A1) in view of
`
`Agnostinelli (US 2009/0301557 A1) as applied to claims 24, 25, and 27-29 above
`
`andin further view of Russell (US 2008/0216893 A1) and in view of Kray (Study on
`
`the edge isolation of industrial silicon solar cells with waterjet-guided laser).
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 8
`
`Regarding claim 26, modified Meier discloses all of the claim limitations as set
`
`forth above.
`
`However, modified Meier does notdisclose trench cutting through the dielectric
`
`layer and the polysilicon emitter and into a portion of the n-type silicon substrate on the
`
`back side of the substrate.
`
`Russell discloses that edge isolations can be performedat different positions on
`
`the solar cell including back sides and serveto electrically isolate the front and rear
`
`solar cells from each other ([0042]).
`
`Kray discloses an edge isolation process whichincludes cutting through the
`
`passivation layer, doped layer and part of the substrate (See Fig. 1).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the solar cell of modified Meier by having the edge be isolated by
`
`cutting through the rear passivation layer, rear emitter layer and part of the substrate as
`
`disclosed by Russell and Kray becauseit will prevent a shunt between front and back
`
`surfaces.
`
`Claims 30-40 is/are rejected under pre-AlA 35 U.S.C. 103(a) as being
`
`unpatentable over Meier (US 6,262,359) in view of Okayasu (JP07-106611, Human
`
`Translation) in view of Borden (WO 2009/094578 A2) and in view of Wenham
`
`(6,429,037 B1) in view of Jordan (US 2005/0268963 A1) in view of Tsunomura (US
`
`2008/0121266 A1).
`
`Regarding claims 30-35, Meier discloses a solar cell comprising (see Fig. 3D,
`
`C5/L38-C6/L55):
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 9
`
`a n-typesilicon substrate (218 n-type, C5/L30-42) having a front surface that
`
`faces the sun to collect solar radiation during normal operation and a back surface
`
`opposite the front surface;
`
`an anti-reflection (214) coating on the front surface of the solarcell;
`
`an emitter (220 p-type) forming a backside junction with the substrate;
`
`a front electrode disposed over the front surface of the substrate (212);
`
`a back electrode disposed over the back surface of the substrate (222)
`
`a front surface field region on the front surface (216 high doped concentration
`
`area n+), on the front surface of the substrate.
`
`However, Meier does notdisclose that there is a textured surface on the N-type
`
`silicon substrate on the front side of the solar cell.
`
`Jordan discloses that the front surface of the solar cell is textured ([0022]). In
`
`addition, Jordan discloses that texturizing the front surface increases light absorption
`
`([0022]).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the front surface of Meier by texturizing the front surface as
`
`disclosed by Jordan becauseit increases light adsorption.
`
`However, Meier does not disclose that the emitter is a polysilicon emitter or that
`
`the front surfacefield is formed of polysilicon and that there is a tunnel dielectric formed
`
`between the emitter and the back surface of the substrate or that there is a tunnel
`
`dielectric formed between the front surface field and the substrate.
`
`Okayasu disclosesthat instead of forming an emitter or surface field from a
`
`portion of a substrate which is doped, an emitter or surface field can be formed using a
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 10
`
`dopedpolysilicon layer ([0005] [0009], Abstract) and by forming an emitter or surface
`
`field this way the thickness can be more accurately controlled and it prevents generation
`
`of floating foreign matter ([0008] [0009)).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to replace the method of forming the emitter/front surface field from a portion
`
`of a substrate of Meier and instead forming the emitter and front surface field by using a
`
`doped polysilicon layer as disclosed by Okayasu because the thickness can be more
`
`accurately controlled and it prevent generation of floating foreign matter.
`
`However, modified Meier does not discloses a tunneling dielectric oxide between
`
`the emitter/front surface field and the substrate.
`
`Borden discloses that tunnel oxides can be usedin solar cells between doped
`
`polysilicon and monocrystalline substrates [0016] and can be formed on boththe front
`
`and back surfaces of a monocrystalline substrate.
`
`Furthermore, Borden discloses that by providing the tunneling layer it prevents
`
`epitaxial growth of the emitter layer and further it protects the surface from plasma
`
`damage of the deposited emitter layer [0015].
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the interface between polycrystalline layers and monocrystalline
`
`substrate back and front surfaces of modified Meier by having a tunneling oxide at the
`
`interfaces becauseit prevents epitaxial growth of the emitter layer and further it protects
`
`the crystalline surface from plasma damage of the deposited emitter layer.
`
`Modified Meier discloses a first tunnel dielectric between the emitter and back
`
`surface and a second tunnel dielectric at the front surface of the substrate.
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 11
`
`However, modified Meier does not disclose that doped region in the substrate.
`
`Wenham discloses a solar cell wherein the area beneath point contacts includes
`
`areas of high doping whichis important for reducing contact resistance (see Fig. 5,
`
`portions 18 and 23) (C1/L25-41).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the front surface field formed in the substrate of modified Meier by
`
`adding in highly doped regions under the metallic contacts as disclosed by Wenham
`
`because doing so reduces the contact resistance and will improve the efficiency of the
`
`solar cell.
`
`Modified Meier now discloses a p-type polysilicon emitter and an n+-type
`
`polysilicon FSF.
`
`However, modified Meier does not discloses two bus bars on the front which run
`
`perpendicular to electrodes and two bus bars on the rearof the cell.
`
`Tsunomura discloses two bus bars on the front (20) which run perpendicular to
`
`electrodes (30) and two bus bars on the rearof the cell (20) (see Figs. 2 and 3)
`
`([0029][0030)).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the solar cell of Meier so that there bus bars as disclosed by
`
`Tsunomura becauseit will improve the collection of photogenerated carriers because
`
`there are additional contacts and conductivity of the electrode.
`
`Regarding claims 36-40, Meier discloses a solar cell comprising (see Fig. 3D,
`
`C5/L38-C6/L55):
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 12
`
`a n-typesilicon substrate (218 n-type, C5/L30-42) having a front surface that
`
`faces the sun to collect solar radiation during normal operation and a back surface
`
`opposite the front surface;
`
`an anti-reflection (214) coating on the front surface of the solarcell;
`
`an emitter (220 p-type) forming a backside junction with the substrate;
`
`a front electrode disposed over the front surface of the substrate (212);
`
`a back electrode disposed over the back surface of the substrate (222)
`
`a front surface field region on the front surface (216 high doped concentration
`
`area n+), on the front surface of the substrate.
`
`However, Meier does notdisclose that there is a textured surface on the N-type
`
`silicon substrate on the front side of the solar cell.
`
`Jordan discloses that the front surface of the solar cell is textured ([0022]). In
`
`addition, Jordan discloses that texturizing the front surface increases light absorption
`
`([0022]).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the front surface of Meier by texturizing the front surface as
`
`disclosed by Jordan becauseit increases light adsorption.
`
`However, Meier does not disclose that the emitter is a polysilicon emitter or that
`
`the front surfacefield is formed of polysilicon and that there is a tunnel dielectric formed
`
`between the emitter and the back surface of the substrate or that there is a tunnel
`
`dielectric formed between the front surface field and the substrate.
`
`Okayasu discloses that instead of forming an emitter or surface field from a
`
`portion of a substrate which is doped, an emitter or surface field can be formed using a
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 13
`
`dopedpolysilicon layer ([0005] [0009], Abstract) and by forming an emitter or surface
`
`field this way the thickness can be more accurately controlled and it prevents generation
`
`of floating foreign matter ([0008] [0009)).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to replace the method of forming the emitter/front surface field from a portion
`
`of a substrate of Meier and instead forming the emitter and front surface field by using a
`
`doped polysilicon layer as disclosed by Okayasu because the thickness can be more
`
`accurately controlled and it prevent generation of floating foreign matter.
`
`However, modified Meier does not discloses a tunneling dielectric oxide between
`
`the emitter/front surface field and the substrate.
`
`Borden discloses that tunnel oxides can be usedin solar cells between doped
`
`polysilicon and monocrystalline substrates [0016] and can be formed on both the front
`
`and back surfaces of a monocrystalline substrate.
`
`Furthermore, Borden discloses that by providing the tunneling layer it prevents
`
`epitaxial growth of the emitter layer and further it protects the surface from plasma
`
`damage of the deposited emitter layer [0015].
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the interface between polycrystalline layers and monocrystalline
`
`substrate back and front surfaces of modified Meier by having a tunneling oxide at the
`
`interfaces becauseit prevents epitaxial growth of the emitter layer and further it protects
`
`the crystalline surface from plasma damage of the deposited emitter layer.
`
`Modified Meier discloses a first tunnel dielectric between the emitter and back
`
`surface and a second tunnel dielectric at the front surface of the substrate.
`
`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 14
`
`However, modified Meier does not disclose that doped region in the substrate.
`
`Wenham discloses a solar cell wherein the area beneath point contacts includes
`
`areas of high doping whichis important for reducing contact resistance (see Fig. 5,
`
`portions 18 and 23) (C1/L25-41).
`
`It would have been obvious to one of ordinary skill in the art at the time of the
`
`invention to modify the front surface field formed in the substrate of modified Meier by
`
`adding in highly doped regions under the metallic contacts as disclosed by Wenham
`
`because doing so reduces the contact resistance and will improve the efficiency of the
`
`solar cell.
`
`Modified Meier now discloses a p-type polysilicon emitter and an n+-type
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`polysilicon FSF.
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`However, modified Meier does not discloses two bus bars on the front which run
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`perpendicular to electrodes and two bus bars on the rearof the cell.
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`Tsunomura discloses two bus bars on the front (20) which run perpendicular to
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`electrodes (30) and two bus bars on the rearof the cell (20) (see Figs. 2 and 3)
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`([0029][0030)).
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`It would have been obvious to one of ordinary skill in the art at the time of the
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`invention to modify the solar cell of Meier so that there bus bars as disclosed by
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`Tsunomura becauseit will improve the collection of photogenerated carriers because
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`there are additional contacts and conductivity of the electrode.
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`However, modified Meier does notdisclose that the solar cell is part of an array
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`of cells and they are interconnected.
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`

`

`Application/Control Number: 16/460,035
`Art Unit: 1726
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`Page 15
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`Tsunomuradiscloses an array of solar cells that interconnected by attaching
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`wiring to the bus bars on the back and front of solar cells (see Fig. 1, interconnect 40
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`and Fig. 4 [0016)).
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`It would have been obvious to one of ordinary skill in the art at the time of
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`invention to modify the solar cell of modified Meier by including additional solar cells to
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`form an array of solar cells and interconnecting them as disclosed by Tsunomura
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`because doing so will harness more solar energy.
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`Conclusion
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`Any inquiry concerning this communication or earlier communications from the
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`

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`Application/Control Number: 16/460,035
`Art Unit: 1726
`
`Page 16
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`DEVINA PILLAY
`Primary Examiner
`Art Unit 1726
`
`/DEVINA PILLAY/
`Primary Examiner, Art Unit 1726
`
`