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Inventors

Fimuyoshi Yoshioka Masayuki Nakano Hiroshi Iwata

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KATANA SILICON TECHNOLOGIES LLC

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SHARP KABUSHIKI KAISHA, Assignor

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ELEVATED SOURCE/DRAIN FIELD EFFECT TRANSISTOR AND METHOD FOR MAKING THE SAME

10/70,478 | U.S. Patent Application

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Location FILE REPOSITORY (FRANCONIA)

Filed May 2, 2002

Examiner BRADLEY SMITH

Class 438

Art Group 2824

Patent No. 6,677,212

Case Type Utility - 438/303000

Status Patented Case

Parent PCT/JP00/06046 -

Child 11/252892

Last Updated: 4 years, 12 months ago

Date	#	Transaction
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ELEVATED SOURCE/DRAIN FIELD EFFECT TRANSISTOR AND METHOD FOR MAKING THE SAME

10/70,478 | U.S. Patent Application

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