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ROBERT M. PARK JAMES M. DEPUYDT HWA CHENG MICHAEL A. HAASE

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DOPING OF IIB-VIA SEMICONDUCTORS DURING MOLECULAR BEAM EPITAXY ELECTOMAGNETIC RADIATION TRANSDUCER HAVING P-TYPE ZNSE LAYER

08/95,872 | U.S. Patent Application

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Location FILE REPOSITORY (FRANCONIA)

Filed July 21, 1993

Examiner MAHSHID D SAADAT

Class 257

Art Group 2508

Patent No. 5,574,296

Case Type Utility - 257/103000

Status Application Undergoing Preexam Processing

Parent 07/573,428 Patented

Last Updated: 5 years, 1 month ago

Date	#	Transaction
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PACER charges $0.10 per page with a 30 page (or $3.00) cap for all documents, except transcripts which have no cap. For example, a five page document is $0.50 and a 50 page document is $3.00. Accessing docket sheets also incurs a fee if we do not already have the full docket sheet (again, max of $3.00). These fees are only incurred for Federal Courts and Bankruptcies.

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DOPING OF IIB-VIA SEMICONDUCTORS DURING MOLECULAR BEAM EPITAXY ELECTOMAGNETIC RADIATION TRANSDUCER HAVING P-TYPE ZNSE LAYER

08/95,872 | U.S. Patent Application

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