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ETCHING METHOD FOR ETCHING A SEMICONDUCTOR SUBSTRATE HAVING A SILICIDE LAYER AND A POLYSILICON LAYER

08/385,124 | U.S. Patent Application

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Location FILE REPOSITORY (FRANCONIA)
Filed Feb. 7, 1995
Examiner THI D DANG
Class 156
Art Group 1109
Patent No. 5,645,683
Case Type Utility - 156/999999
Status Patented Case
Child 13315/1994
Last Updated: 4 years, 4 months ago
Date # Transaction