Case 6:20-cv-00636-ADA Document 92-6 Filed 03/31/21 Page 1 of 10
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`Exhibit 27
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`United States Patent
`Brown et al .
`
`( 10 ) Patent No .: US 10,468,292 B2
`( 45 ) Date of Patent :
`Nov. 5 , 2019
`
`US010468292B2
`
`( 72 )
`
`( * ) Notice :
`
`( 54 ) SHUTTER DISK FOR PHYSICAL VAPOR
`DEPOSITION CHAMBER
`( 71 ) Applicant : Applied Materials , Inc. , Santa Clara ,
`CA ( US )
`Inventors : Karl M. Brown , Santa Clara , CA ( US ) ;
`Jason Schaller , Austin , TX ( US )
`( 73 ) Assignee : APPLIED MATERIALS , INC . , Santa
`Clara , CA ( US )
`Subject to any disclaimer , the term of this
`patent is extended or adjusted under 35
`U.S.C. 154 ( b ) by 233 days .
`( 21 ) Appl . No .: 15 / 245,004
`Aug. 23 , 2016
`( 22 ) Filed :
`( 65 )
`Prior Publication Data
`US 2016/0358809 A1 Dec. 8 , 2016
`Related U.S. Application Data
`( 63 ) Continuation of application No. 12 / 563,531 , filed on
`Sep. 21 , 2009 .
`( 60 ) Provisional application No. 61 / 099,090 , filed on Sep.
`22 , 2008 .
`Int . Ci .
`C23C 16/00
`HOIL 21/687
`HO1J 37/32
`HOIL 21/67
`C23C 14/50
`( 52 ) U.S. CI .
`HOIL 21/68785 ( 2013.01 ) ; C23C 14/50
`CPC
`( 2013.01 ) ; HOIJ 37/32477 ( 2013.01 ) ; HOIL
`21/6719 ( 2013.01 ) ; HOIL 21/67069 ( 2013.01 ) ;
`HOIL 21/68 707 ( 2013.01 )
`( 58 ) Field of Classification Search
`HO1J 37/32477 ; HOIL 21/68785
`CPC
`
`( 51 )
`
`( 2006.01 )
`( 2006.01 )
`( 2006.01 )
`( 2006.01 )
`( 2006.01 )
`
`156 / 345.3 , 345.19
`USPC
`See application file for complete search history .
`References Cited
`
`( 56 )
`
`U.S. PATENT DOCUMENTS
`11/1954 Dayley
`5/1968 Bassan
`7/1971 Bowen
`8/1992 Kimura et al .
`6/1993 Tepman
`10/2000 Commandeur
`
`*
`* 11/2000 Yoshida
`
`2,694,589 A
`3,381,660 A
`3,592,353 A
`5,140,482 A
`5,223,112 A
`6,136,106 A
`6,153,022 A
`6,162,297 A
`
`12/2000 Mintz et al .
`( Continued )
`FOREIGN PATENT DOCUMENTS
`
`B22F 3/115
`148/519
`C23C 22/23
`148/253
`
`CN
`JP
`
`5/2008
`101179005
`10/2005
`1005302875
`( Continued )
`
`OTHER PUBLICATIONS
`Chinese Search Report for Application No. 2009801380005 filed
`Sep. 21 , 2009 , 2 pages .
`
`( Continued )
`Primary Examiner — Keath T Chen
`( 74 ) Attorney , Agent , or Firm - Patterson + Sheridan
`LLP
`
`( 57 )
`ABSTRACT
`A shutter disk suitable for shield a substrate support in a
`physical vapor deposition chamber is provided . In one
`embodiment , the shutter disk includes a disk - shaped body
`having an outer diameter disposed between a top surface and
`a bottom surface . The disk - shape body includes a double
`step connecting the bottom surface to the outer diameter .
`15 Claims , 3 Drawing Sheets
`
`Case 6:20-cv-00636-ADA Document 92-6 Filed 03/31/21 Page 2 of 10
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`

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`US 10,468,292 B2
`Page 2
`
`B22F 1/0096
`428/558
`
`( 56 )
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`6,190,513 B1
`6,221,504 B1 *
`6,669,825 B2
`6,736,946 B2
`6,827,825 B2
`6,847,057 B1
`7,008,517 B2
`2002/0046944 Al
`2002/0090464 A1
`2003/0094366 Al
`2004/0182698 Al
`2005/0048876 A1
`2005/0051517 Al
`2005/0064247 Al
`2005/0271984 A1
`2006/0169900 Al
`2007/0095651 Al
`2007/0258075 Al
`2008/0135859 Al
`
`2/2001 Forster et al .
`4/2001 Pfeffinger
`12/2003 Ohmi et al .
`5/2004 Hixson et al .
`12/2004 Feltsman et al .
`1/2005 Gardner et al .
`3/2006 Feltsman
`4/2002 Geva
`7/2002 ang et al .
`5/2003 Inaba et al .
`9/2004 Feltsman
`3/2005 West et al .
`3/2005 Oehrlein et al .
`3/2005 Sane et al .
`12/2005 Brueckner et al .
`8/2006 Noji et al .
`5/2007 Ye et al .
`11/2007 Kim et al .
`6/2008 Cho et al .
`
`FOREIGN PATENT DOCUMENTS
`10-0240196 B1
`1/2000
`11/2007
`10-2007-0107515
`
`KR
`KR
`
`OTHER PUBLICATIONS
`Final Office Action for U.S. Appl . No. 12 / 542,501 dated Sep. 7 ,
`2012 .
`Chinese Search Report for Application No. 2009801380005 filed
`Sep. 21 , 2009 .
`Prosecution history of U.S. Appl . No. 12 / 542,501 dated May 24 ,
`2012 .
`PCT international search report and written opinion of PCT / US2009 /
`057663 dated Apr. 30 , 2010 .
`Office Action for U.S. Appl . No. 12 / 563,531 dated Sep. 17 , 2015 .
`Final Office Action for U.S. Appl . No. 12 / 563,531 dated Feb. 15 ,
`2013 .
`Office Action for U.S. Appl . No. 12 / 563,531 dated Aug. 2 , 2011 .
`Final Office Action for U.S. Appl . No. 12 / 563,531 dated Nov. 22 ,
`2013 .
`
`* cited by examiner
`
`Case 6:20-cv-00636-ADA Document 92-6 Filed 03/31/21 Page 3 of 10
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`

`

`U.S. Patent
`
`Nov. 5 , 2019
`
`Sheet 1 of 3
`
`US 10,468,292 B2
`
`es i
`
`FIG . 1
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`Case 6:20-cv-00636-ADA Document 92-6 Filed 03/31/21 Page 4 of 10
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`112
`
`10120
`
`FIG . 2
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`th
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`122
`
`otteet
`
`it .
`
`2
`
`122
`
`

`

`U.S. Patent
`
`Nov. 5 , 2019
`
`Sheet 2 of 3
`
`US 10,468,292 B2
`
`Y
`
`YYYY
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`Y
`
`308
`
`FIG . 3
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`322
`
`324
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`Case 6:20-cv-00636-ADA Document 92-6 Filed 03/31/21 Page 5 of 10
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`

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`U.S. Patent
`
`Nov. 5 , 2019
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`Sheet 3 of 3
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`US 10,468,292 B2
`
`4.42
`
`402
`
`406
`
`( ) OOO 00
`
`1010 0
`420
`
`418 412
`
`100/300
`
`www
`
`At . . * * * *
`
`FTAT
`
`Tri?
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`TTTA
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`FIG . 4
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`CONTROLLER
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`SUPPORT
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`Case 6:20-cv-00636-ADA Document 92-6 Filed 03/31/21 Page 6 of 10
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`

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`US 10,468,292 B2
`
`15
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`20
`
`5
`
`1
`SHUTTER DISK FOR PHYSICAL VAPOR
`DEPOSITION CHAMBER
`
`2
`ever , due to the hardness of materials such as SST or Sic ,
`such processes are difficult and costly .
`Thus , there is a need for an improved shutter disk .
`CROSS - REFERENCE TO RELATED
`SUMMARY
`APPLICATIONS
`A shutter disk suitable for shield a substrate support in a
`This application is a continuation of U.S. patent applica
`physical vapor deposition chamber is provided . In one
`tion Ser . No. 12 / 563,531 , filed Sep. 21 , 2009 , which claims
`embodiment , the shutter disk includes a disk - shaped body
`the benefit of U.S. Provisional Patent Application No.
`61 / 099,090 , filed Sep. 22 , 2008 , both of which are hereby 10 having an outer diameter disposed between a top surface and
`incorporated by reference in their entirety .
`a bottom surface . The disk - shape body includes a double
`step connecting the bottom surface to the outer diameter .
`BACKGROUND
`In another embodiment , the shutter disk includes a disk
`shaped body . The body has an outer diameter disposed
`Field
`between a top surface and a bottom surface . An outer step
`Embodiments of the present invention generally relate to
`and an inner step are formed on the bottom surface , the outer
`the field of semiconductor process chambers , and more
`step extending further into the body than the inner step . An
`particularly , to shutter disks for use in semiconductor pro
`outer wall substantially parallel to a centerline of the body
`cess chambers .
`connects the outer step to the inner step . An annular groove
`Description of the Related Art
`is formed in the bottom surface disposed radially inward of
`Conventional semiconductor device formation is com
`the inner step .
`monly performed in one or more process chambers , typi
`In another embodiment , a shutter disk having a tuned
`cally combined to form a multi - chamber processing system
`coefficient of thermal expansion is provided . In some
`( e.g. , a cluster tool ) which has the capability to process
`multiple substrates ( e.g. , semiconductor wafers ) in a con- 25 embodiments , a shutter disk having a tuned coefficient of
`trolled processing environment . To maintain process unifor
`thermal expansion may include a body formed from a first
`mity and ensure optimal performance of the process cham
`material comprising at least two components , wherein a
`ber , various conditioning operations are periodically
`ratio of each of the at least two components to one another
`performed . For example , in a physical vapor deposition
`is selected to provide a coefficient of thermal expansion of
`( PVD ) processing chamber , one commonly used condition- 30 the body that is substantially similar to a coefficient of
`ing operation is a “ burn - in ” process , wherein a target dis
`thermal expansion of a second material to be deposited atop
`posed in the PVD processing chamber is bombarded with
`the body .
`plasma ions to remove oxides or other contaminants from
`In some embodiments , a process chamber may include a
`the target prior to performing substrate processes . Another
`chamber body defining an inner volume having a target
`commonly used conditioning operation is a “ pasting ” pro- 35 comprising materials to be deposited atop a substrate dis
`cess , wherein a covering is applied over material deposited
`posed therein ; a substrate support disposed within the cham
`on process chamber surfaces to prevent the material from
`ber body for supporting the substrate ; a shutter disk for
`flaking off the process chamber surfaces and contaminating
`protecting the substrate support , the shutter disk comprising
`the substrate during subsequent processes .
`In both of the aforementioned conditioning operations , a 40 a body formed from a composite material having at least two
`components , wherein a ratio of each of the at least two
`shutter disk may be positioned via a transfer robot atop a
`substrate support disposed in the process chamber to prevent
`components to one another is selected to provide a coeffi
`the deposition of any materials upon the substrate support .
`cient of thermal expansion of the body that is substantially
`Thus , the shape of the shutter disk is important for both the
`similar to a coefficient of thermal expansion of materials to
`positional accuracy of robotic handling and placement , 45 be deposited on the shutter disk ; and a transfer robot
`along with substrate support coverage , as errors in either
`movably coupled to the chamber body for transferring the
`may lead to undesirable exposure of the upper surface of the
`shutter disk to the substrate support .
`substrate support during the conditioning operations .
`In some embodiments , a shutter disk having a tuned
`Moreover , conventional shutter disks are typically made
`coefficient of thermal expansion may include a body having
`of a material having a mechanical stiffness sufficient enough 50 a top surface , bottom surface and a peripheral surface
`to resist deformation due to the additional weight of the
`coupling the top surface to the bottom surface , wherein the
`deposited material . For example , the shutter disk commonly
`body comprises aluminum and silicon provided in a ratio of
`comprises a metal alloy , such as stainless steel ( SST ) , or a
`aluminum to silicon of about 1 : 4 to about 7 : 3 and wherein
`ceramic , such as silicon carbide ( SIC ) . However , shutter
`the body has a coefficient of thermal expansion that is
`disks constructed of such materials weigh a substantial 55 substantially similar to a coefficient of thermal expansion of
`amount , leading to increased costs due to providing and
`a material to be deposited atop the body .
`maintaining a transfer robot capable of securely maneuver
`ing the shutter disk . In addition , the coefficient of thermal
`BRIEF DESCRIPTION OF THE DRAWINGS
`expansion ( CTE ) is limited in range , resulting in a poten
`tially significant difference between the coefficients of ther- 60
`Embodiments of the present invention , briefly summa
`mal expansion of the shutter disk and deposited materials ,
`rized above and discussed in greater detail below , can be
`leading to diminished adhesion between the deposited mate
`understood by reference to the illustrative embodiments of
`rial and the surface of the shutter disk , thus increasing the
`the invention depicted in the appended drawings . It is to be
`risk of the deposited material peeling or flaking off and
`noted , however , that the appended drawings illustrate only
`contaminating the underlying substrate support . To alleviate 65 exemplary embodiments of this invention and are therefore
`this problem , the surface of the shutter disk may be textured
`not to be considered limiting of its scope , for the invention
`via an abrasive blasting process to increase adhesion . How
`may admit to other equally effective embodiments .
`
`Case 6:20-cv-00636-ADA Document 92-6 Filed 03/31/21 Page 7 of 10
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`

`

`US 10,468,292 B2
`
`3
`4
`FIG . 1 is a top view of an exemplary shutter disk in
`In some embodiments , a double step 110 may be formed
`accordance with some embodiments of the present inven
`in the outer portion of the bottom surface 106 , as shown in
`FIG . 2. The double step 110 comprises an inner step 112 and
`tion .
`FIG . 2 depicts a partial cross sectional view from the
`an outer step 114. The inner step 112 and outer step 114 are
`centerline of the exemplary shutter disk of FIG . 1 , in 5 substantially parallel to the bottom surface 106. An inner
`accordance with some embodiments of the present inven
`wall 116 separates the inner step 112 from the bottom
`tion .
`surface 106. The outer step 114 extends further into the body
`FIG . 3 depicts a partial cross sectional view from the
`102 than the inner step 112 as referenced from the bottom
`centerline of another embodiment of a shutter disk in
`surface 106. The outer step 114 is disposed radially outward
`accordance with some embodiments of the present inven- 10 of the inner step 112 and it coupled to the outer diameter
`tion .
`108. The outer step 114 is separated from the inner step 112
`FIG . 4 is a schematic diagram of an exemplary processing
`by an outer wall 118. The outer wall 118 and the inner wall
`chamber suitable for use in connection with some embodi
`116 are substantially parallel to the centerline 109 of the
`ments of the present invention .
`To facilitate understanding , identical reference numerals 15 body 102. In some embodiments , the transition between the
`outer step 114 and the top surface 104 may be rounded , for
`have been used , where possible , to designate identical
`example , the outer diameter 108 may have a full radius .
`elements that are common to the figures . It is contemplated
`The groove 120 may be formed in the bottom surface 106
`that elements and features of one embodiment may be
`beneficially incorporated in other embodiments without fur
`of the body 102 radially inward of the inner step 112. In
`20 some embodiments , the groove 120 includes an inner groove
`ther recitation .
`wall 122 , an outer groove wall 124 and a groove bottom 126 .
`The inner groove wall 122 and outer groove wall 124 are
`DETAILED DESCRIPTION
`substantially parallel to the centerline 109 of the body 102 .
`The groove bottom 126 is substantially perpendicular to the
`Embodiments of the present invention generally relate to
`semiconductor manufacturing processing chambers , and 25 centerline 109 of the body 102. In some embodiments , the
`more particularly , to shutter disks . The inventive apparatus
`groove bottom 126 extends further into the body 102 than
`includes a shutter disk for use in conditioning operations of
`the outer step 114 as referenced from the bottom surface
`process chambers . The inventive apparatus may advanta
`106 .
`geously provide a light weight , cost effective shutter disk
`The body 102 may be constructed of any suitable material
`that is resistant to deformation and provides a tuned coef- 30 having a mechanical stiffness sufficient enough to resist
`ficient of thermal expansion and improved adhesive prop
`deformation due to the additional weight of materials which
`may be deposited atop the shutter disk 100. In some embodi
`erties .
`FIG . 1 is a top view of an exemplary shutter disk in
`ments , the material may also be lightweight so as to allow
`the shutter disk 100 to be easily maneuvered by a transfer
`accordance with some embodiments of the present inven
`tion . FIG . 2 depicts a cross sectional view from the center- 35 robot . In some embodiments , the body 102 may be fabri
`line of the exemplary shutter disk of FIG . 1 , in accordance
`cated from aluminum , aluminum alloys , aluminum silicon
`with some embodiments of the present invention . To best
`alloy or other suitable material . In some embodiments , the
`understand the invention , the reader should refer simultane
`body 102 may be fabricated from a metal composite , such as
`ously to FIGS . 1 and 2. Although described herein as a disk ,
`aluminum silicon ( AISI ) . The body 102 may be fabricated
`the shutter disk may have any suitable geometry as required 40 via any method suitable for forming the desired shape , for
`example , machining , extruding , stamping , mold casting , die
`to operate within a particular processing chamber .
`The shutter disk 100 generally comprises a body 102 an
`casting , spray casting , spray deposition , or the like .
`outer surface 128. The outer surface 128 includes at least a
`In some embodiments , the body 102 may comprise a first
`top surface 104 and bottom surface 106 and an outer
`material having a coefficient of thermal expansion ( CTE )
`diameter 108. Although discussed in terms of an outer 45 substantially similar to a second material being deposited
`diameter and referred to as a disk , the shutter disk 100 is not
`atop the shutter disk 100 to facilitate adequate adhesion
`limited to round shapes and may have any shape suitable for
`between surface 128 of the shutter disk 100 and the material
`use in a process chamber as disclosed herein . The bottom
`being deposited , thereby preventing the deposited material
`surface 106 may comprise at least one feature 107 to
`from flaking ( e.g. , falling off ) and reducing particle genera
`interface with the components of a transfer robot ( not 50 tion . For example , in embodiments such where titanium ( Ti )
`shown ) to facilitate stable and precise movement . In one
`or titanium nitride ( TiN ) is to be deposited atop the shutter
`embodiment , the feature 107 formed on the bottom surface
`disk 100 ( e.g. , having a CTE of between about 9-11 ppm / º
`106 of the body 102 is an annular groove 120 and / or a blind
`C. ) , the body 102 may comprise AlSi , having a CTE of about
`hole 140 ( shown in phantom ) . The annular groove 120 and
`9-11 ppm / ° C. , or about 11 ppm / ° C. In some embodiments ,
`the blind hole 140 are aligned with a centerline 109 of the 55 a ratio of components of the material used to form the body
`body 102 to provide a known reference location for inter
`102 may be varied to provide a tunable CTE range . For
`example , in embodiments such as where the body 102
`facing with the robot ( not shown ) .
`The top surface 104 is generally planar and has an
`comprises AlSi , the ratio of aluminum to silicon may be
`orientation substantially perpendicular to the centerline 109
`from about 1 : 4 to about 7 : 3 , resulting in a CTE of about 5
`of the body 102. The bottom surface 106 is also generally 60 to about 17 ppm / ° C. For example , in embodiments where
`planar and has an orientation substantially perpendicular to
`the ratio of aluminum to silicon is about 1 : 3.5 to 1 : 4.5 , and
`the centerline 109 of the body 102. In some embodiments ,
`most preferably 1 : 4 , the CTE may be about 5 ppm / ° C. In
`the body 102 has an outer diameter 108 of about 6 to about
`embodiments where the ratio of aluminum to silicon is about
`12 inches , for example about 6 , 8 , or 11.85 inches , and a
`3 : 6.5 to 3 : 7.5 and most preferably 3 : 7 , the CTE may be
`thickness between the top surface 104 and bottom surface 65 about 7 ppm / ° C. In embodiments where the ratio of
`106 of about 0.1 to about 0.25 inches , for example , about
`aluminum to silicon is about 1 : 0.75 to 1 : 1.25 and most
`preferably 1 : 1 , the CTE may be about 11 ppm / ° C. In
`0.15 inches .
`
`Case 6:20-cv-00636-ADA Document 92-6 Filed 03/31/21 Page 8 of 10
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`

`

`US 10,468,292 B2
`
`5
`6
`The bottom surface 306 includes at least two pads , shown
`embodiments where the ratio of aluminum to silicon is about
`in FIG . 4 as outer support surface 316 and inner support
`7 : 2.5 to 7 : 3.5 and most preferably 7 : 3 , the CTE may be
`surface 318 , which support the body 302 on the upper
`about 17 ppm / ° C.
`surface of the substrate support . The outer support surface
`In some embodiments , the surface 128 of the body 102
`may be textured to facilitate improve adhesion with a 5 316 is disposed adjacent the outside diameter wall 324. The
`material deposited thereon , thereby preventing the deposited
`inside support surface 318 is disposed proximate the cen
`materials from falling off the shutter disk 100. The surface
`terline 109 of the body 302 .
`128 of the body 102 may be textured by any process suitable
`The bottom surface 306 of the body 302 may include an
`to adequately texture or roughen the surface 128 of the body
`optional blind hole 140 for receiving a center locating pin
`102 , for example , an abrasive blasting process , such as grit 10 442 of the robot end effector ( as shown in FIG . 4 ) . The blind
`blasting , sand blasting , bead blasting , or the like . In some
`hole 140 is aligned with the centerline 109 of the body 302 .
`embodiments , such as where the body 102 comprises AlSi ,
`A double step 308 is formed between the support pads
`the surface 128 of the body 102 may be textured to a
`( support surfaces 316 , 318 ) and the bottom surface 306 of
`roughness average of up to between about 600 to about 800
`the body 302. The double step 308 has two outer steps 310 ,
`R? , by a suitable process , for example , via a grit blasting 15 312 , with the outer step 312 being located outward of and
`substantially larger than the outer step 310. An inner step
`process .
`In some embodiments , at least a portion of the surface 128
`314 is formed between the outer steps 310 , 312 and intends
`further into the body 302 then the outer steps 310 , 312 .
`of the body 102 may be covered with a coating 142. The
`coating 142 may be a twin - arc - spray aluminum deposition
`In one embodiment , at least a portion of the body 102 may
`or other suitable coating . The surfaces receiving the coating 20 be covered with a coating 142. Portions of the body 102 that
`142 may be textured as described above . In one embodi
`may receive the coating 142 include the top surface 304 , the
`ment , the coating 142 is disposed on the top surface 104 and
`outer diameter 332 and the sloped surface 320. The coating
`142 may be a twin - arc - spray aluminum deposition or other
`the outer diameter 108 of the body 102 .
`In some embodiments , a method of forming a shutter disk
`suitable coating as described above . The surfaces receiving
`having a tuned CTE is also provided . For example , in some 25 the coating 142 may be textured also as described above .
`embodiments , the body 102 may be formed from a first
`FIG . 4 is a schematic diagram of an exemplary process
`material comprising at least two components , wherein a
`chamber 400 for use in connection with some embodiments
`ratio of each of the at least two components with respect to
`of the present invention . In some embodiments , the process
`one another is selected to provide a coefficient of thermal
`chamber 400 may be one of a plurality of chambers com
`expansion of the body 102 that is substantially similar to a 30 bined to form a multi - chamber processing system ( e.g. , a
`coefficient of thermal expansion of a second material to be
`cluster tool ) . In some embodiments , the process chamber
`deposited atop the body . In some embodiments the compo
`400 may be a deposition chamber , for example , a physical
`nents of the first material may be aluminum and silicon . The
`vapor deposition ( PVD ) chamber . An exemplary process
`ratio of aluminum to silicon may be selected to provide a
`chamber and a cluster tool that may be modified in accor
`desired coefficient of thermal expansion as discussed above 35 dance with the present invention are described in previously
`( e.g. , the ratio of aluminum to silicon may be from about 1 : 4
`incorporated U.S. Provisional Patent Application 61/099 ,
`to about 7 : 3 , resulting in a CTE of about 5 to about 17 ppm / º
`090 , filed Sep. 22 , 2008 , and entitled “ SHUTTER DISK
`C. ) . The CTE of the second material may be determined and
`AND SYSTEM WITH SHUTTER DISK ” and U.S. patent
`the ratio of the components of the first material may be
`application Ser . No. 12 / 542,501 , filed on Aug. 17 , 2009 , and
`selected to provide a CTE that substantially matches the 40 entitled “ SHUTTER DISK HAVING A TUNED COEFFI
`CTE of the second material . For example , in some embodi
`CIENT OF THERMAL EXPANSION . ”
`ments , titanium ( Ti ) or titanium nitride ( TiN ) is to be
`The process chamber 400 includes a chamber body 402
`deposited atop the shutter disk 100. The CTE of titanium
`and a lid assembly 404 that defines an evacuable process
`( Ti ) or titanium nitride ( TiN ) is between about 9-11 ppm / º
`volume 406. The chamber body 402 generally includes
`C. As such , the body 102 may comprise aluminum and 45 sidewalls 408 and a bottom 410. The sidewalls generally
`silicon , having a controlled ratio of aluminum to silicon to
`contain a plurality of apertures that include an access port ,
`provide a CTE of between about 9-11 ppm / ° C. , or about 11
`pumping port and a shutter disk port 412 ( access and
`ppm / ° C.
`pumping ports not shown ) . A sealable access port ( not
`FIG . 3 is a partial cross sectional view from the centerline
`shown ) provides for entrance and egress of the substrate ( not
`of another embodiment of a shutter disk 300 in accordance 50 shown ) from the process chamber 400. The pumping port is
`with some embodiments of the present invention . The shut
`coupled to a pumping system ( not shown ) that evacuates and
`ter disk 300 may be fabricated from the materials discussed
`controls the pressure within the process volume 406. The
`shutter disk port 412 is configured to allow at least a portion
`above with reference to the shutter disk 100 .
`In one embodiment , the shutter disk 300 includes a body
`of a shutter disk 100/300 therethrough when the shutter disk
`302 having a top surface 304 , an outer diameter 332 and a 55 100/300 is in the cleared position as shown in FIG . 4. A
`bottom surface 306. In one embodiment , the outside diam
`housing 416 generally covers the shutter disk port 412 to
`eter 332 may be curved , such as having a full radius . In one
`maintain the integrity of the vacuum within the process
`embodiment , the intersection between the outside diameter
`volume 406 .
`332 and the top surface 304 is a sloped surface 320. The
`The lid assembly 404 of the chamber body 402 generally
`sloped surface 320 may define an angle 334 of between 60 supports an annular shield 418 suspended therefrom that
`about 30 to 60 degrees , such as about 45 degrees . The top
`supports a shadow ring 420. The shadow ring 420 is
`surface 304 is generally perpendicular to a centerline 109 of
`generally configured to confine deposition to a portion of the
`the body 302. The outside diameter 332 may include an
`substrate exposed through the center of the shadow ring 420 .
`outside diameter wall 324 disposed inward of the outside
`The lid assembly 404 generally comprises a target 422 and
`diameter 332 and the bottom surface 306. In one embodi- 65 a magnetron 424 .
`ment , the outside diameter wall 324 is oriented substantially
`The target 422 provides material that is deposited on the
`substrate during the deposition process while the magnetron
`parallel to the centerline 109 of the body 302 .
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`29
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`Case 6:20-cv-00636-ADA Document 92-6 Filed 03/31/21 Page 9 of 10
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`US 10,468,292 B2
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`424 enhances uniform consumption of the target material
`wherein the annular inner stepped surface extends
`during processing . The target 422 and substrate support 426
`further into the body than the first annular outer
`stepped surface and the second annular outer stepped
`are biased relative each other by a power source 428. An
`inert gas , for example , argon , is supplied to the process
`surface ; and
`an annular inner support surface disposed radially
`volume 406 from a gas source 430. A plasma is formed 5
`inward of the second annular outer stepped surface ,
`between the substrate and the target 422 from the gas . Ions
`the annular inner support surface coplanar with the
`within the plasma are accelerated toward the target 422 and
`annular outer support surface .
`cause material to become dislodged from the target 422. The
`2. The processing apparatus of claim 1 , wherein the side
`dislodged target material is attracted towards the substrate
`surface of the body further comprises :
`and deposits a film of material thereon .
`The substrate support 426 is generally disposed on the
`an annular side wall connected to the annular outer
`support surface and oriented substantially parallel to a
`bottom 410 of the chamber body 402 and supports the
`centerline of the body and having a side wall diameter ;
`substrate during processing . A shutter disk mechanism 432
`is generally disposed proximate the substrate support 426 .
`and
`an annular protrusion from the annular side wall disposed
`The shutter disk mechanism 432 generally includes a blade 15
`between the top surface and the bottom surface having
`434 that supports the shutter disk 100 and an actuator 436
`an outer diameter larger than the side wall diameter .
`coupled to the blade 434 by a shaft 438 .
`3. The processing apparatus of claim
`1 , wherein the
`The blade 434 may be moved between the cleared posi
`annular inner stepped surface , the first annular outer stepped
`tion shown in FIG . 4 and a second position that places the
`shutter disk 100/300 substantially concentric with the sub- 20 surface , and the second annular outer stepped surface are
`strate support 426 ( as shown in phantom in FIG . 4 ) . In the
`substantially perpendicular to the centerline of the body .
`4. The processing apparatus of claim 1 , wherein the body
`second position , the shutter disk 100/300 may be transferred
`further comprises :
`( by utilizing the lift pins ) to the substrate support 426 during
`a blind hole formed in the bottom surface of the body , a
`the target burn - in and chamber pasting processes . The blade
`centerline of the blind hole co - linear with a centerline
`434 is returned to the cleared position during the target 25
`of the body .
`burn - in and chamber pasting processes . The actuator 436
`may be any device that may be adapted to rotate the shaft
`5. The processing apparatus of claim 4 , wherein the
`438 through an angle that moves the blade 434 between the
`annular inner step surface extends further into the body than
`the first annular outer stepped surface and the second
`cleared and second positions .
`The blade 434 may optionally include a center locating 30 annular outer stepped surface but less than the blind hole .
`pin 442 sized to mate with the blind hole 140 formed in the
`6. The processing apparatus of claim 1 , wherein the top
`center of the bottom of the shutter disk 100/300 . The center
`surface of the body is coated with an aluminum coating .
`locating pin 442 locates the shutter disk 100/300 in a
`7. The processing apparatus of claim 1 , wherein the top
`surface of the body is coated with a twin - arc - spray alumi
`predefined position on the blade 434 to facilitate more
`35 num coating .
`accurate substrate transfer .
`While the foregoing is directed to embodiments of the
`8. The processing apparatus of claim 1 , wherein the top
`surface is textured .
`present invention , other and further embodiments of the
`invention may be devised without departing from the basic
`9. The processing apparatus of claim 8 , wherein the top
`scope thereof , and the scope thereof is determined by the
`surface has a roughness average between about 600 RA and
`about 800 Ra .
`claims that follow .
`10. The processing apparatus of claim 1 , wherein the body
`What is claimed is :
`further comprises :
`1. A processing apparatus comprising :
`a sloped surface coupling the annular protrusion of the
`a process chamber ; and
`side surface to the top surface .
`a shutter disk comprising :
`11. The processing apparatus of claim 10 , wherein the
`a disk - shaped body configured to cover a substrate sup
`sloped surface defines an angle between about 30 degrees
`port in the process chamber and configured to be
`and about 60 degrees .
`transportable within the process chamber on a robot
`12. The processing apparatus of claim 1 , wherein the first
`blade , the disk - shaped body comprising :
`annular outer stepped surface is larger than the second
`a top surface ;
`annular outer stepped surface .
`a side surface ;
`13. The processing apparatus of claim 1 , wherein the body
`a bottom surface comprising :
`is formed of a material having a coefficient of thermal
`an annular outer support surface ;
`expansion between 5 ppm / ° C. and about 17 ppm / ° C.
`a first annular outer stepped surface disposed radially
`14. The processing apparatus of claim 1 , wherein the
`i