`
`Exhibit 1
`
`
`
`
`
`
`
`Case 6:20-cv-00636-ADA Document 198 Filed 08/10/22 Page 2 of 47
`I 1111111111111111 11111 1111111111 lllll lllll 111111111111111 lll111111111111111
`US007544276B2
`
`c12) United States Patent
`Zhang et al.
`
`(IO) Patent No.:
`(45) Date of Patent:
`
`US 7,544,276 B2
`Jun.9,2009
`
`(54) BIASED PULSE DC REACTIVE SPUTTERING
`OF OXIDE FILMS
`
`(75)
`
`Inventors: Hongmei Zhang, San Jose, CA (US);
`Mukundan Narasimhan, San Jose, CA
`(US); Ravi B. Mullapudi, San Jose, CA
`(US); Richard E. Demaray, Portola
`Valley, CA (US)
`
`(73) Assignee: SpringWorks, LLC, Minnetonka, MN
`(US)
`
`( *) Notice:
`
`Subject to any disclaimer, the term ofthis
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 529 days.
`
`(21) Appl. No.: 11/228,834
`
`(22) Filed:
`
`Sep.16,2005
`
`(65)
`
`Prior Publication Data
`
`US 2006/0054496 Al
`
`Mar. 16, 2006
`
`Related U.S. Application Data
`
`(62) Division of application No. 10/101,863, filed on Mar.
`16, 2002, now Pat. No. 7,378,356.
`
`(51)
`
`Int. Cl.
`C23C 14134
`(2006.01)
`(52) U.S. Cl. .............................. 204/298.08; 204/298.2;
`204/298.06
`(58) Field of Classification Search .............. 204/298.2,
`204/298.06, 298.08
`See application file for complete search history.
`
`(56)
`
`References Cited
`
`U.S. PATENT DOCUMENTS
`
`3,309,302 A
`3,616,403 A
`3,850,604 A
`4,111,523 A
`4,437,966 A
`4,587,225 A
`
`3/1967 Heil
`10/1971 Collins et al.
`11/1974 Klein
`9/1978 Kaminow et al.
`3/1984 Hope et al.
`5/1986 Tsukuma et al.
`
`4,619,680 A
`RE32,449 E
`4,710,940 A
`4,785,459 A
`4,915,810 A
`4,978,437 A
`
`10/1986
`6/1987
`12/1987
`11/1988
`4/1990
`12/1990
`
`Nourshargh et al.
`Claussen
`Sipes, Jr.
`Baer
`Kestigian et al.
`Wirz
`
`(Continued)
`
`FOREIGN PATENT DOCUMENTS
`
`EP
`
`0 510 883 A2
`
`10/1992
`
`(Continued)
`
`OTHER PUBLICATIONS
`
`Affinito et al., "PML/oxide/PML Barrier Layer Performance Differ(cid:173)
`ences Arising from Use of UV or Electron Beam Polymerization of
`the PML Layers," Thin Solid Films vol. 308-309, pp. 19-25 (1997).
`
`(Continued)
`
`Primary Examiner-Rodney G McDonald
`(74) Attorney, Agent, or Firm-Finnegan, Henderson,
`Farabow, Garrett & Dunner, LLP
`
`(57)
`
`ABSTRACT
`
`A biased pulse DC reactor for sputtering of oxide films is
`presented. The biased pulse DC reactor couples pulsed DC at
`a particular frequency to the target through a filter which
`filters out the effects of a bias power applied to the substrate,
`protecting the pulsed DC power supply. Films deposited uti(cid:173)
`lizing the reactor have controllable material properties such
`as the index of refraction. Optical components such as
`waveguide amplifiers and multiplexers can be fabricated
`using processes performed on a reactor according to the
`present invention.
`
`13 Claims, 27 Drawing Sheets
`
`,.......
`
`c:::20
`
`--1
`
`12-i._ _______ __ ,~ FILTER H PDC POWER I
`t
`
`c::::15
`
`c::::14
`
`53~d
`
`54 i========::::::i-~16
`l========:::::::1-~17
`
`18
`
`
`
`Case 6:20-cv-00636-ADA Document 198 Filed 08/10/22 Page 3 of 47
`
`US 7,544,276 B2
`Page 2
`
`U.S. PATENT DOCUMENTS
`
`5,085,904 A
`5,107,538 A
`5,119,460 A
`5,173,271 A
`5,174,876 A
`5,196,041 A
`5,200,029 A
`5,206,925 A
`5,225,288 A
`5,237,439 A
`5,252,194 A
`5,287,427 A
`5,296,089 A
`5,303,319 A
`5,306,569 A
`5,309,302 A
`5,338,625 A
`5,355,089 A
`5,381,262 A
`5,427,669 A
`5,457,569 A
`5,475,528 A
`5,478,456 A
`5,483,613 A
`5,499,207 A
`5,512,147 A
`5,538,796 A
`5,555,127 A
`5,563,979 A
`5,565,071 A
`5,569,520 A
`5,591,520 A
`5,597,660 A
`5,603,816 A
`5,607,560 A
`5,607,789 A
`5,612,152 A
`5,613,995 A
`5,654,054 A
`5,654,984 A
`5,686,360 A
`5,689,522 A
`5,693,956 A
`5,718,813 A
`5,719,976 A
`5,731,661 A
`5,738,731 A
`5,755,938 A
`5,757,126 A
`5,762,768 A
`5,771,562 A
`5,792,550 A
`5,811,177 A
`5,830,330 A
`5,831,262 A
`5,841,931 A
`5,847,865 A
`5,849,163 A
`5,853,830 A
`5,855,744 A
`5,870,273 A
`5,882,946 A
`5,900,057 A
`5,930,584 A
`5,942,089 A
`5,948,215 A
`5,952,778 A
`5,961,682 A
`5,966,491 A
`5,977,582 A
`6,001,224 A
`
`2/1992 Deak et al.
`4/1992 Benton et al.
`6/1992 Bruce et al.
`12/1992 Chen et al.
`12/1992 Buchal et al.
`3/1993 Tumminelli et al.
`4/1993 Bruce et al.
`4/1993 N akazawa et al.
`7/1993 Beeson et al.
`8/1993 Misono et al.
`10/1993 Demaray et al.
`2/1994 Atkins et al.
`3/1994 Chen et al.
`4/1994 Ford et al.
`4/1994 Hiraki
`5/1994 Vollmann
`8/1994 Bates et al.
`10/1994 Treger
`1/1995 Arima et al.
`6/1995 Drummond
`10/1995 Liou et al.
`12/1995 LaBorde
`12/1995 Humpal et al.
`1/1996 Bruce et al.
`3/1996 Miki eta!.
`4/1996 Bates et al.
`7/1996 Schaffer et al.
`9/1996 Abdelkader et al.
`10/1996 Bruce et al.
`10/1996 Demaray et al.
`10/1996 Bates
`1/1997 Migliorini et al.
`1/1997 Bates
`2/1997 Demaray et al.
`3/1997 Hirabayashi et al.
`3/1997 Treger et al.
`3/1997 Bates
`3/1997 Bhandarkar et al.
`8/1997 Tropsha et al.
`8/1997 Hershbarger et al.
`11/1997 Harvey, III et al.
`11/1997 Beach
`12/1997 Shi et al.
`2/1998 Drummond et al.
`2/1998 Henry et al.
`3/1998 So et al.
`4/1998 Shindo et al.
`5/1998 Fukui et al.
`5/1998 Harvey, III et al.
`6/1998 Goy et al.
`6/1998 Harvey, III et al.
`8/1998 Phillips et al.
`9/1998 Shi et al.
`11/1998 Lantsman
`11/1998 Greywall et al.
`11/1998 Foresi et al.
`12/1998 Gopinath et al.
`12/1998 Ichikawa et al.
`12/1998 Mccaulley et al.
`1/1999 Halsey et al.
`2/1999 Sogabe et al.
`3/1999 Otani
`5/1999 Buchal et al.
`7/1999 Sun et al.
`8/1999 Sproul et al.
`9/1999 Lantsman
`9/1999 Raska! et al.
`10/1999 Lee et al.
`10/1999 Di Giovanni
`11/1999 Fleming et al.
`12/1999 Drummond et al.
`
`6,004,660 A
`6,024,844 A
`6,046,081 A
`6,051,114 A
`6,051,296 A
`6,052,397 A
`6,057,557 A
`6,058,233 A
`6,071,323 A
`6,077,642 A
`6,080,643 A
`6,088,492 A
`6,093,944 A
`6,106,933 A
`6,117,279 A
`6,146,225 A
`6,154,582 A
`6,157,765 A
`6,162,709 A
`6,165,566 A
`6,176,986 Bl
`6,197,167 Bl
`6,198,217 Bl
`6,204,111 Bl
`6,210,544 Bl
`6,214,660 Bl
`6,232,242 Bl
`6,236,793 Bl
`6,242,129 Bl
`6,248,291 Bl
`6,248,640 Bl
`6,261,917 Bl
`6,280,585 Bl
`6,281,142 Bl
`6,287,986 Bl
`6,288,835 Bl
`6,290,821 Bl
`6,290,822 Bl
`6,300,215 Bl
`6,302,939 Bl
`6,306,265 Bl
`6,344,419 Bl
`6,350,353 B2
`6,356,694 Bl
`6,358,810 Bl
`6,361,662 Bl
`6,365,319 Bl
`6,391,166 Bl
`6,409,965 Bl
`6,413,382 Bl
`6,413,645 Bl
`6,416,598 Bl
`6,423,776 Bl
`6,433,380 B2
`6,444,750 Bl
`6,452,717 Bl
`6,488,822 Bl
`6,506,289 B2
`6,511,615 Bl
`6,533,907 B2
`6,537,428 Bl
`6,563,998 Bl
`6,576,546 B2
`6,602,338 B2
`6,605,228 Bl
`6,615,614 Bl
`6,632,563 Bl
`6,673,716 Bl
`6,750,156 B2
`6,760,520 Bl
`6,768,855 Bl
`6,827,826 B2
`6,846,765 B2
`
`12/1999 Topolski et al.
`2/2000 Drummond et al.
`4/2000 Kuo
`4/2000 Yao et al.
`4/2000 Mccaulley et al.
`4/2000 Jeon et al.
`5/2000 Ichikawa
`5/2000 Dragone
`6/2000 Kawaguchi
`6/2000 Ogata et al.
`6/2000 Noguchi et al.
`7/2000 Kaneko et al.
`7/2000 VanDover
`8/2000 Nagai et al.
`9/2000 Smolanoff et al.
`11/2000 Sheats et al.
`11/2000 Bazyl enko et al.
`12/2000 Bruce et al.
`12/2000 Raoux et al.
`12/2000 Tropsha
`1/2001 Watanabe et al.
`3/2001 Tanaka
`3/2001 Suzuki et al.
`3/2001 Uemoto et al.
`4/2001 Sasaki
`4/2001 Uemoto et al.
`5/2001 Hata et al.
`5/2001 Lawrence et al.
`6/2001 Johnson
`6/2001 N akagama et al.
`6/2001 Nam
`7/2001 Quek et al.
`8/2001 Obinata et al.
`8/2001 Basceri et al.
`9/2001 Mihara
`9/2001 Nilsson et al.
`9/2001 McLeod
`9/2001 Fleming et al.
`10/2001 Shin
`10/2001 Rabin et al.
`10/2001 Fu et al.
`2/2002 Forster et al.
`2/2002 Gopalraja et al.
`3/2002 Weber
`3/2002 Dornfest et al.
`3/2002 Chiba et al.
`4/2002 Heath et al.
`5/2002 Wang
`6/2002 Nagata et al.
`7/2002 Wang eta!.
`7/2002 Graff et al.
`7/2002 Sircar
`7/2002 Akkapeddi et al.
`8/2002 Shin
`9/2002 Touhsaent
`9/2002 Endo
`12/2002 Moslehi
`1/2003 Demaray et al.
`1/2003 Dawes et al.
`3/2003 Demaray et al.
`3/2003 Xiong et al.
`5/2003 Farah et al.
`6/2003 Gilbert et al.
`8/2003 Chen et al.
`8/2003 Kawaguchi et al.
`9/2003 Makikawa et al.
`10/2003 Krasnov et al.
`1/2004 D'Couto et al.
`6/2004 Le et al.
`7/2004 Medin eta!.
`7/2004 Bakke et al.
`12/2004 Demaray et al.
`1/2005 Imamura et al.
`
`
`
`Case 6:20-cv-00636-ADA Document 198 Filed 08/10/22 Page 4 of 47
`
`US 7,544,276 B2
`Page 3
`
`6,884,327 B2
`7,262,131 B2
`2001/0027159 Al
`2001/0031122 Al
`2001/0034106 Al
`2001/0041460 Al
`2002/0033330 Al
`2002/0076133 Al
`2002/0106297 Al
`2002/0134671 Al
`2002/0170821 Al
`2002/0191916 Al
`2003/0019326 Al
`2003/0022487 Al
`2003/0042131 Al
`2003/0044118 Al
`2003/0063883 Al
`2003/0077914 Al
`2003/0079838 Al
`2003/0097858 Al
`2003/0127319 Al
`2003/0134054 Al
`2003/0141186 Al
`2003/0143853 Al
`2003/0173207 Al
`2003/0173208 Al
`2003/0174391 Al
`2003/0175142 Al
`2003/0185266 Al
`2004/0077161 Al
`2004/0105644 Al
`2004/0259305 Al
`2005/0000794 Al
`2005/0006768 Al
`2005/0048802 Al
`2005/0175287 Al
`2005/0183946 Al
`2006/0057283 Al
`2006/0057304 Al
`2006/0071592 Al
`2006/0134522 Al
`2007/0053139 Al
`
`4/2005 Pan et al.
`8/2007 Narasimhan et al.
`10/2001 Kaneyoshi
`10/2001 Lackritz et al.
`10/2001 Moise et al.
`11/2001 Wiggins
`3/2002 Demaray et al.
`6/2002 Li et al.
`8/2002 Ueno et al.
`9/2002 Demaray et al.
`11/2002 Sandlin et al.
`12/2002 Frish et al.
`1/2003 Han et al.
`1/2003 Yoon et al.
`3/2003 Johnson
`3/2003 Zhou et al.
`4/2003 Demaray et al.
`4/2003 Le et al.
`5/2003 Brcka
`5/2003 Strohhofer et al.
`7/2003 Demaray et al.
`7/2003 Demaray et al.
`7/2003 Wang et al.
`7/2003 Celii et al.
`9/2003 Zhang et al.
`9/2003 Pan et al.
`9/2003 Pan et al.
`9/2003 Milonopoulou et al.
`10/2003 Henrichs
`4/2004 Chen et al.
`6/2004 Dawes
`12/2004 Demaray et al.
`1/2005 Demaray et al.
`1/2005 Narasimhan et al.
`3/2005 Zhang et al.
`8/2005 Pan et al.
`8/2005 Pan et al.
`3/2006 Zhang et al.
`3/2006 Zhang et al.
`4/2006 Narasimhan et al.
`6/2006 Zhang et al.
`3/2007 Zhang et al.
`
`FOREIGN PATENT DOCUMENTS
`
`0 652 308 A2
`EP
`0 639 655 Al
`EP
`0 820 088 A2
`EP
`0 867 985 Bl
`EP
`1068899 Al
`EP
`1 092 689 Al
`EP
`1 189 080 A2
`EP
`2-054764 A2
`JP
`6-010127 A
`JP
`6-100333 A
`JP
`7-224379 A
`JP
`7-233469
`JP
`2002-26187
`KR
`WO 96/23085
`WO
`WO 97/35044
`WO
`WO 00/21898 Al
`WO
`WO 00/22742 A2
`WO
`WO 00/36665 Al
`WO
`WO O 1/82297 Al
`WO
`WO 02/12932 A2
`WO
`WO WO 2004/021532 Al
`WO WO 2004/077519 A2
`WO WO 2004/106581 A2
`WO WO 2004/106582 A2
`WO WO 2006/063308 A2
`
`10/1994
`2/1995
`1/1998
`9/1998
`1/2001
`4/2001
`3/2002
`2/1990
`1/1994
`12/1994
`8/1995
`9/1995
`4/2002
`8/1996
`9/1997
`4/2000
`4/2000
`6/2000
`11/2001
`2/2002
`3/2004
`9/2004
`12/2004
`12/2004
`6/2006
`
`WO WO 2007/027535
`
`3/2007
`
`OTHER PUBLICATIONS
`
`Affinito et al., "Polymer-Oxide Transparent Barrier Layers," Society
`of Vacuum Coaters, 39th Ann. Technical Conference Proceedings,
`May 5-10, 1996, Philadelphia, PA, pp. 392-397 (1996).
`Alder, T. et al., "High-Efficiency Fiber-to-Chip Coupling Using Low(cid:173)
`Loss Tapered Single-Mode Fiber," IEEE Photonics Technology Let(cid:173)
`ters, 12(8):1016-1018 (2000).
`Almeida, Vil son R. et al., "N anotaper for compact mode conversion,"
`Optics Letters, 28(15): 1302-1304 (2003).
`Asghari et al., "ASOC-A Manufacturing Integrated Optics Tech(cid:173)
`nology," Part of the SPIE Conference on Integrated Optics Devices
`III, vol. 3620, pp. 252-262 (Jan. 1999).
`Barbier et al, "Amplifying Four-Wavelength Combiner, Based on
`Erbiurn/Etterbium-Doped Waveguide Amplifiers and Integrated
`Splitters", IEEE Photonics Technology Letters, vol. 9, pp. 315-317,
`1997, 4 pages.
`Barbier, Denis, "Performances and potentioal applications of erbium
`doped planar waveguide amplifiers and lasers," GeeO, pp. 5 8-6 ( date
`unknown).
`Beach R.J., "Theory and optimization oflens ducts," Applied Optics,
`35:12:2005-15 (1996).
`Belkind et al., "Using pulsed direct current power for reactive sput(cid:173)
`tering of Al2O3 ," J Vac. Sci. Technol. A 17(4), pp. 1934-1940 (Jul.
`1999).
`Bestwick, T., "ASOC silicon integrated optics technology," Part of
`the SPIE Conferences on Photonics Packaging and Integration, SPIE
`vol. 3631, pp. 182-190 (Jan. 1999).
`Borsella et al., "Structural incorporation of silver insoda-lime glass
`by the ion-exchange process: a photoluminescence spectroscopy
`study", Applied Physics A 71, pp. 125-132 (2000).
`Byer et al., "Nonlinear Optics and Solid-state Lasers," IEEE Journal
`on Selected Topics in Quantum Electronics, vol. 6, No. 6, pp. 921-929
`(Nov. 2000).
`Campbell et al., "Titanium dioxide (TiO2)-based gate insulators,"
`IBM J Res. Develop. 43(3), 383-391, (May 1999).
`Chang, C.Y. (edited by), "ULSI Technology," The McGraw-Hill
`Companies, Inc., New York, 1996, Chapter 4, pp. 169-170, 226-231
`(1996) ..
`Chen et al. "Development of Supported Bifunctional Electrocatalysts
`for Unitized Regenerative Fuel Cells," Journal of the Electrochemi(cid:173)
`cal Society, 149(8), Al092-99, (2002).
`Choi et al., "Er-Al-codoped silicate planar light waveguide-type
`amplifier fabricated by radio-frequency sputtering," Optics Letters,
`vol. 25, No. 4, pp. 263-265 (Feb. 15, 2000).
`Cooksey et al. "Predicting Permeability & Transmission Rate for
`Multilayer Materials," Foodtechnology, vol. 53, No. 9, pp. 60-63
`(Sep. 1999).
`Crowder, et al., "Low-Temperature Single-Crystal Si TFT's Fabri(cid:173)
`cated on Si Films Processed via Sequential Lateral Solidification,"
`IEEE, vol. 19, No. 8 (Aug. 1998), pp. 306-308.
`Delavaux et al., "Integrated optics erbium ytterbium amplifier system
`in 10 Gb/s fiber transmission experiment", 22nd European Confer(cid:173)
`ence on Optical Communication-ECOC' 96, Oslo, 4 pages (1996).
`Distiributed Energy Resources: Fuel Cells, Projects, http://www.
`eere.energy.gov/der/fuel_cells/projects.htrnl (2003).
`DuPont Teijin Films, Mylar 200 SBL 300, Product Information
`(2000).
`Electrometals Technologies Limited, Financial Report for the year
`2002, Corporate Directory, Chairman's Review, Review of Opera(cid:173)
`tions (2002).
`E-Tek website: FAQ, Inside E-Tek, E-Tek News, Products: http://
`www.etek-inc.com/ (2003).
`Flytzanis et al, "nonlinear Optics in Composite Materials," E. Wolf,
`Progress in Optics XXIX (c) Elsevier Scince Publishers B.V., pp.
`323-425 (1991).
`Frazao et al., "EDFA Gain Flattening Using Long-Period Fibre Grat(cid:173)
`ings Based on the Electric Arc Technique," (date unknown).
`
`
`
`Case 6:20-cv-00636-ADA Document 198 Filed 08/10/22 Page 5 of 47
`
`US 7,544,276 B2
`Page 4
`
`Fujii et al, "1.54 mm photoluminescence of Er3+ doped into SiO2
`films containing Si nanocrystals: Evidence for energy transfer from
`Si nanocrystals for Er3w, Appl. Phys. Lett. 71 (9), pp. 1198-1200
`(Sep. 1997).
`Garcia, C. "Size Dependence of Lifetime and Absorption Cross Sec(cid:173)
`tion of Si Nanocrystals Embedded in SiOi," Appl. Phys. Lett., vol. 82,
`No. 10, pp. 1595-1597 (Mar. 2003).
`Goossens et al., "Sensitization of TiO2 with p-type semiconductor
`polymers," Delft Interfaculty Research Center, Delft University of
`Technology Laboratory of Inorganic Chemistry, The Netherlands
`(1998).
`Greene et al., "Morphological and electrical properties of rf sputtered
`Y203-doped Zr02 thin films," J. Vac. Sci. Tecnol., vol. 13, No. 1
`(Jan./Feb. 1976), pp. 72-75.
`Han, Rak-Seung et al. "Optical Gain at 1.54 min Erbium-Doped
`Silicon Nanocluster Sensitized Waveguide," Appl. Phys. Lett., vol.
`79, No. 27, pp. 4568-4570 (Dec. 2001).
`Hayakawa et al., "Enhanced fluorescence from Eu3+ owing to surface
`plasma oscillation of silver particles in glass", Journal of Non-Crys(cid:173)
`talline Solids, vol. 259, pp. 16-22 (1999).
`Hayakawa et al, "Field enhancement effect of small Ag particles on
`the fluorescence from Eu3+ -doped Si02 glass",Appl. Phys. Lett., vol.
`74, No. 11, pp. 1513-1515 (Mar. 1999).
`Hayfield, P.C.S., "Development of a New Material-Monolithic
`Ti4O7 Ebonix Ceramic," Royal Society Chemistry, (2002).
`Hehlen et al. "Spectroscopic Properties of Er3+ - and Yb3+ -doped
`Soda-Lime Silicate and Aluminosilicate Glasses," Physical Review
`B, vol. 56, No. 15, pp. 9302-9318 (Oct. 1997).
`Hehlen et al. "Uniform Upconversion in High-Concentration Er3+(cid:173)
`doped Soda Lime Silicate andAluminosilicate Glasses," Optics Let(cid:173)
`ters, vol. 22, No. 11, pp. 772-774 (Jun. 1997).
`Horst et al., "Compact, Tunable Optical Devices in Silicon(cid:173)
`Oxynitride Wave Guide Technology," IBM Research Division, 3
`pages (1999).
`Hubner, J. andGuldberg-Kjaer, S., "Planar Er-and Yb-Doped Ampli(cid:173)
`fiers and Lasers," COM Technical University of Denmark, JO.sup.th
`European Conf. On Integrated Optics, Session WeB2, pp. 71-74
`(2001).
`Hwang, Man-Soo et al., "The effect of pulsed magnetron sputtering
`on the properties of indium tin oxide thin films," Elsevier Science
`B.V., p. 29-33, (2003).
`Im, et al. "Controlled Super-lateral Growth of Si Films for
`Microsctructural Manipulation and Optimization," Materials Sci(cid:173)
`ence Program (1998), pp. 603-617.
`Im, et al., "Crystalline Si Films for Integrated Active-Matrix
`LiquidCrystal Displays," MrS Bulletin (Mar. 1996), pp. 39-48.
`Im, et al., "Single-crystal Si films for thin-film transistor devices,"
`American Institute of Physics (1997), pp. 3434-3436.
`Itoh, M. et al., "Large reduction of singlemode-fibre coupling loss in
`1.5% delta planar lightwave circuits using spot-size converters,"
`Electronics Letters, 38(2):72-74 (2002).
`Jackson et al. "An Accurate Compact EDFA Model," Dept. of Elec(cid:173)
`trical and Computer Engineering, University of BC (date unknown).
`Janssen et al. "Photoinduced electron transfer from conjugated poly(cid:173)
`mers onto nanocrystalline TiO2 ," Eindhoven University of Technol(cid:173)
`ogy, The Netherlands (date unknown).
`Johnson, J.E. et al., "Monolithically Integrated Semiconductor Opti(cid:173)
`cal Amplifier and Electroabsorption Modulator with Dual(cid:173)
`Waveguide Spot-Size Converter Input," IEEE Journal of Selected
`Topics in Quantum Electronics, 6(1): 19-25, (2000).
`Jonsson L.B. et al. "Frequency response in pulsed DC reactive sput(cid:173)
`tering processes," Thin Solid Films, vol. 365, pp. 43-48 (2000).
`Kato et al., "Recent progress on PLC hybrid integration," Part of the
`SPIE Conference on Optoelectric Integrated Circuits III, SPIE. vol.
`3631, pp. 28-36 (Jan. 1999).
`Kato, Kuniharu et al., "PLC Hybrid Integration Technology and Its
`Application to Photonic Components," IEEE Journal of Selected
`Topics in Quantum Electronics, 6(1):4-13 (2000).
`Kelly et al., "Reactive pulsed magnetron sputtering process for alu(cid:173)
`mina films," J Vac. Sci. Technol. A 18(6), pp. 2890-2896 (Nov. 2000).
`Kelly et al., "Control of the structure and properties of aluminum
`oxide coatings deposited by pulsed magnetron sputtering," J Vac.
`Sci. Technol. A 17(3), pp. 945-953 (May 1999).
`
`Kik, P.G. et al. "Gain Limiting Processes in Er-doped Si Nanocrystal
`Waveguides in SiOi," JAppl. Phys., vol. 91, No. 1, pp. 534-536 (Jan.
`1, 2002).
`Kim et al. "Frequency-dependent pulsed direct current magnetron
`sputtering of titanium oxide films," J Vac. Sci. Technol. A 19(2);
`429-434 (Mar. 2001).
`Kim et al. "Mixture Behaviour and Microwave Dielectric Properties
`in the Low-fired TiOrCuO System," Jpn. J Appl. Phys., 39, 2696-
`2700, (2000).
`Ladouceur, F. et al., "8.8 Evaluation of Results", Silica-based Buried
`Channel Waveguides and Devices., Chapman & Hall, London, pp.
`98-99 (1996).
`Ladouceur, F. et al., "Effect of side wall roughness in buried channel
`waveguides," IEEE Proc., vol. 141, pp. 242-248 (Aug. 1994).
`Lamb, William B., "Designing Nonfoil Containing Skins for VIP
`Applications," DuPont VIA Symposium Presenation, ( 1999).
`Lamb, William et al. "Designing Non-Foil Containing Skins for
`Vacuum InsulationPanel (VIP) Applications," Vuoto, vol. XXVIII,
`No. 1-2----Gennaio-Giugno 1999, pp. 55-58 (1999).
`Lange et al, "High Gain Ultra-Short Length Phosphate glass Erbium(cid:173)
`Doped Fiber Amplifier Material", OSA Optical Fiber Communica(cid:173)
`tions (OFC), 3 pages (2002).
`Laporta et al, "Diode-pumped cw bulk Er: Yb: glass laser", 1952
`Optics Letters/vol. 16, No. 24/Dec. 15, 6 pages (1991).
`Laurent-Lund, C. et al., "PECVD Grown Multiple Core Planar
`Waveguides with Extremely Low Interface Reflections and Losses,"
`IEEE Photonics Technology Letters, vol. 10, No. 10, pp. 1431-1433
`(Oct. 1998).
`Lee et al., "Effect of size and roughness on light transmission in a
`S/SiO.sub.2 waveguide: Experiments and model," Department of
`Materials Science and Engineering, Massachusetts Institute of Tech(cid:173)
`nology, (Jul. 12, 2000).
`Lee et al. "Effects of interfacial layer growth on the electrical char(cid:173)
`acteristics of thin titanium oxide films on silicon," Applied Physics
`Letters, 74(21), 3143-3145, (May 1999).
`Love, J.D. et al., "Quantifying Loss Minimisation in Single-Mode
`Fibre Tapers," Electronics Letters, 22(17):912-914, (1986).
`Mardare et al. "On the structure of Titanium Oxide Thin Films,"
`Analele Stiintifice Ale Universitatii AL. I Cuza !ASA, vol. XLV(cid:173)
`XLVI, 201-208 (1999).
`Marques, P.V.S. et al., "Planar Silica-on-Silicon Waveguide Lasers
`Based in Two Layer Core Devices," JO.sup.th European Conference
`on Integrated Optics, Session WeB2, pp. 79-82 (2001 ).
`Meijerink et al, Luminescence of AG+ In Crystalline and Glassy
`SrB407 , Journal of Physics and Chemistry of Solids, vol. 54, No. 8,
`pp. 901-906, (1993).
`Mesnaoui et al, "Spectroscopic properties of AG+ ions in phospage
`glasses ofNaPO3 _AgPO3 system", European Journal of Solid State
`and Inorganic Chemistry, vol. 29, pp. 1001-1013, 14 pages (1992).
`Mitomi, 0. et al., Design of a Single-Mode Tapered Waveguide for
`Low-Loss Chip-to-Fiber Coupling,: IEEE Journal of Quantum Elec(cid:173)
`tronics, 30(8):1787-1793, (1994).
`Mizuno et al. "Temperature dependence of oxide decomposition on
`titanium surfaces in UHV," submitted to Journal of Vacuum Science
`and Technology, (Oct. 28, 2001).
`Ohkubo et al., "Polarization-Insensitive Arrayed-Waveguide Grating
`Using Pure Si)2 Cladding," Fifth Optoelectronics and Communica(cid:173)
`tion Conference (OECC 2000) Technical Digest, 2 pages (Jul. 2000).
`Ohmi et al., "Rare earth metal oxides for high-K gate insulator,"
`Tokyo Institute ofTechnology,(date unknown).
`Ohtsuki et al., "Gain Characteristics of a high concentration Er3+ -
`doped phosphate glass waveguide", J Appl. Phys. 78(6), pp. 3617-
`3621 (1995).
`Ono et al., "Design ofaLow-loss Y-branch Optical Waveguide," Fifth
`Optoelectronic and Communications Conference (OECC 2000)
`Technical Digest, 2 pages (Jul. 2000).
`Padmini et al. "Realization of High-Tunability Barium Strontium
`Titanate Thin Films by RF Magnetron Sputtering," College of Engi(cid:173)
`neering, University of California, Santa Barbara. ( date unknown).
`Pan et al., "Planar Er3+-doped aluminosilicate waveguide amplifier
`with more than 10 dB gain across C-band," Optical Society of
`America, 3 pages (2000).
`
`
`
`Case 6:20-cv-00636-ADA Document 198 Filed 08/10/22 Page 6 of 47
`
`US 7,544,276 B2
`Page 5
`
`Peters et al., "Formation mechanism of silver nanocrystals made by
`ion irradiation of Na+ -Ag+ ion-exchanged sodalime silicate glass",
`Nuclear Instruments and Methods in Physics Research B 168, pp.
`237-244 (2000).
`Rajarajan, M. et al., et al., "Numerical Study of Spot-Zise Expanders
`for an Efficient OEIC to SMF Coupling," IEEE Photonics Technol(cid:173)
`ogy Letters, 10(8):1082-1084, (1998).
`Ramaswamy et al., "Ion-Exchanged Glass Waveguides: A Review",
`Journal ofLightwave Technology, vol. 6, No. 6, pp. 984-1001 (1988).
`Roberts et al., "The Photoluminescence of Erbium-doped Silicon
`Monoxide," Department of Electronics and Computer Science, 7
`pages (Jun. 1996).
`Sanyo Vacuum Industries Co., Ltd. Products Info, TiOi, (2003).
`http://www.sanyovac.eo.jp/Englishweb/products/ETi02.htm.
`Schermer, R. et al., "Investigation of Mesa Dielectric Waveguides,",
`Proceedings of the OSA Integrated Photonics Research Topical
`Meeting and Exhibit, Paper No. IWB3 (Jun. 2001).
`Schiller et al. "PVD Coating of Plastic Webs and Sheets with High
`Rates on Large Areas," European Materials Research Society 1999
`Spring Meeting, Jun. 1-4, 1999, Strasbourg, France (1999).
`Second International Symposium of Polymer Surface Modification:
`Relevance to Adhesion, Preliminary Program (1999).
`Seventh International Conference on TiO2 Photocatalysis: Funda(cid:173)
`mentals & Applications, Toronto, Ontario, Canada, Final Program
`(Nov. 7-21, 2002).
`Sewell, P. et al., "Rib Waveguide Spot-Size Transformers: Modal
`Properties," Journal of Lightweave Technology, 17(5):848-856,
`(1999).
`Shaw et al. "Use ofVapor DepositedAcrlate Coatings to Improve the
`Barrier Properties of MetallizedFilm," Society of Vacuum Coaters
`505/856-7168, 37th Annual Technical Conference Proceedings, pp.
`240-244 (1994).
`Shin et al. "Dielectric and Electrical Properties of Sputter Grown
`(Ba,Sr)TiO 3 Thin Films," J. Appl. Phys., vol. 86, No. 1, pp. 506-513
`(Jul. 1999).
`Shmulovich et al., "Recent progress in Erbium-doped waveguide
`amplifiers," Bell Laboratories, 3 pages ( 1999).
`Slooff et al, "Optical properties of Erbium-doped organic
`polydentate cage complexes", J Appl. Phys. 83, pp. 497-503 (Jan.
`1998).
`Smith, R.E., "Reduced Coupling Loss Using a Tapered-Rib Adia(cid:173)
`batic-Following Fiber Coupler," IEEE Photonics Technology Letters,
`8(8):1052-1054 (1996).
`Strohhofer, et al. "Energy transfer to Er3+in Ag ion-exchanged glass",
`FOM Institute for Atomic and Molecular Physics, 10 pages (date
`unknown).
`Sugiyama et al., "Gas Permeation Through the Pinholes of Plastic
`Film Laminated with Aluminum Foil," Vuoto, vol. XXVIII, N.
`1-2-Gennaio-Guigno ( 1999).
`Tervonen, A., "Challenges and opportunities for integrated optics in
`optical networks," Part of the SPIE Conference in Integrated Optics
`Devices III, SPIE vol. 3620, pp. 2-11 (Jan. 1999).
`Ting et al., "Study ofplanarized sputter-deposited SiO2," J. Vac. Sci.
`Technol., 15(3) pp. 1105-1112 (May/Jun. 1978).
`Treichel et al., "The influence of pulsed magnetron sputtering on
`topography and crystallinity of TiO2 films on glass," Space and
`Coatings Technology, vol. 123, pp. 268-272 (2000).
`Tukarnoto, H. et al., "Electronic Conductivity of LiCoO5 and Its
`Enhancement by Magnesium Doping," J. Electrochem. Soc., vol. 44,
`No. 9, pp. 3164-3168 (Sep. 1997).
`Van Dover, R.B. "Amorphous Lanthanide-Doped TiOx Dielectric
`Films," Appl. Phys. Lett., vol. 74, No. 20,pp. 3041-3043 (May 1999).
`Viljanen et al, "Planar Optical Coupling Elements for Multimode
`Fibers with Two-Step Ion Migration Process", Applied Physics, 24,
`No. 1, pp. 61-63 (Jan. 1981).
`Villegas et al, "Optical spectroscopy ofa soda lime glass exchanged
`with silver", Physics and Chemistry of Glasses 37(6), pp. 248-253
`(1996).
`Von Rottkay et al. "Influence of stoichiometry on electrochromic
`cerium-titanium oxide compounds," Lawrence Berkeley National
`Laboratory, UC Berkeley, CA, (date unknown).
`
`Westlinder et al. "Simulation and Dielectric Characterization of
`Reactive de Magnetron Cosputtered (Ta2O5 ) 1_x(TiO2)x Thin Films,"
`J. Vac. Sci. Technol. B, vol. 20, No. 3, pp. 855-861 (May/Jun. 2002).
`Wilkes, Kenneth T. "Gas Permeation Through Vacuum Barrier Films
`and its Effect on VIP Thermal Performance," Vacuum Insulation
`Panel Symp., Baltimore, Maryland, (May 3, 1999).
`Yanagawa, H. et al., "Index-and-Dimensional Taper and Its Applica(cid:173)
`tion to Photonic Devices," Journal of Lightwave Technology,
`10(5):587-591 (1992).
`Yoshikawa, K. et al., "Spray formed aluminium alloys for sputtering
`targets," Power Metallurgy, vol. 43, No. 3 (2000).
`Zhang, Hongmei et al. "High Dielectric Strength, High k TiO2 Films
`by Pulsed DC, Reactive Sputter Deposition," (2001).
`Office Action issued on Sep. 27, 2004 in U.S. Appl. No. 10/291,179.
`Response to Office Action filed on Mar. 14, 2005 in U.S. Appl. No.
`10/291,179.
`Office Action issued on Jun. 15, 2005 in U.S. Appl. No. 10/291,179.
`Office Action issued on May 2, 2002 in U.S. Patent No. 6,533,907.
`Response to Office Action filed on Sep. 3, 2002 in U.S. Patent No.
`6,533,907.
`Office Action issued on Feb. 12, 2004 in U.S. Appl. No. 09/903,081.
`Response to Office Action filed on Aug. 10, 2004 in U.S. Appl. No.
`09/903,081.
`Office Action issued on Sep. 10, 2004 in U.S. Appl. No. 09/903,081.
`Amendment/RCE filed on Aug. 10, 2004 in U.S. Appl. No.
`09/903,081.
`Office Action issued on Mar. 17, 2005 in U.S. Appl. No. 09/903,081.
`Response to Office Action issued on Jun. 17, 2005 in U.S. Appl. No.
`09/903,081.
`Office Action issued on Jul. 8, 2005 in U.S. Appl. No. 09/903,081.
`Office Action issued on May 14, 2003 in U.S. Appl. No. 10/101,492.
`Response to Office Action filed on Aug. 14, 2003 in U.S. Appl. No.
`10/101,492.
`Office Action issued on Sep. 3, 2003 in U.S. Appl. No. 10/101,492.
`Response to Office Action filed on Mar. 3, 2004 in U.S. Appl. No.
`10/101,492.
`Office Action issued on Feb. 24, 2004 in U.S. Appl. No. 10/101,863.
`Response to Office Action filed on Jul. 23, 2004 in U.S. Appl. No.
`10/101,863.
`Office Action issued on Oct. 6, 2004 in U.S. Appl. No. 10/101,863.
`Office Action dated Jan. 13, 2005, received in U.S. Appl. No.
`10/101,863.
`Response to office Action filed on Jun. 10, 2005 in U.S. Appl. No.
`10/101,863.
`Office Action issued on Aug. 4, 2005, in U.S. Appl. No. 10/101,863.
`Office Action dated Mar. 25, 2005, received in U.S. Appl. No.
`10/954,182.
`Office Action issued on Oct. 22, 2003 in U.S. Appl. No. 10/101,341.
`Response to Office Action filed on Feb. 23, 2004 in U.S. Appl. No.
`10/101,341.
`Office Action issued on Jun. 10, 2004 in U.S. Appl. No. 10/101,341.
`Response to Office Action filed on Dec. 8, 2004 in U.S. Appl. No.
`10/101,341.
`Office Action issued on May 4, 2004 in U.S. Appl. No. 10/101,493.
`International Search Report issued on Nov. 21, 2003 in PCT/US03/
`24809.
`Office Action issued on Mar. 14, 2005 in U.S. Appl. No. 10/789,953.
`International Search Report issued on Oct. 11, 2004 in PCT /US2004/
`005531.
`Written Opinion issued on Oct. 11, 2004 in PCT/US2004/005531.
`Office Action issued on Mar. 24, 2005 in U.S. Appl. No. 10/851,542.
`Pct international Search Report of Application No. PCT/US2004/
`014524 dated Mar. 2, 2005.
`PCT International Search Report of Application No. PCT/US2004/
`014523 datedJan.17, 2005.
`Belkind, A. et al., "Pulsed-DC Reactive Sputtering of Dielectrics:
`Pulsing Parameter Effects," 43rdAnnual Technical Conference Pro(cid:173)
`ceedings-Denver: 86-90 (Apr. 15-20, 2000).
`Scholl, R., "Power Supplies for Pulsed Plasma Technologies: State(cid:173)
`Of-The-Art And Outlook," Advances Energy Industries, Inc., pp. 1-8
`(1999).
`Scholli, R., "Power Systems for Reactive Sputtering of Insulating
`Films," Advances Energy Industries, Inc., pp. 1-8 (Aug. 2001).
`
`
`
`Case 6:20-cv-00636-ADA Document 198 Filed 08/10/22 Page 7 of 47
`
`US 7,544,276 B2
`Page 6
`
`Office Action dated Dec. 1, 2006, in U.S. Appl. No. 10/291,179.
`Office Action dated Dec. 18, 2006, in U.S. Appl. No. 09/903,081.
`Office Action dated Dec. 1, 2006, in U.S. Appl. No. 11/100,856.
`Response dated Feb. 6, 2007, in U.S. Appl. No. 10/101,863.
`Response to Office Action dated Dec. 6, 2006, in U.S. Appl. No.
`10/954,182.
`Supplemental Preliminary Amendment dated Feb. 6, 2007, in U.S.
`Appl. No. 11/191,643.
`Response to Office Action dated Dec. 21, 2006, in U.S. Appl. No.
`11/228,805.
`Response to Office Action dated Nov. 8, 2006, to the Korean Patent
`Office in Application No. 10-2005-7016055.
`Response to Office Action dated Jan. 26, 2007, in U.S. Appl. No.
`10/851,542.
`Preliminary Amendment dated Jul. 21, 2006, in U.S. Appl. No.
`11/297,057.
`Supplemental Preliminary Amendment, Substitute Specification
`with Markings, Substitute Specification without Markings, and
`Replacement Drawing Sheets dated Dec. 6, 2006 in U.S. Appl. No.
`11/297,057.
`Continuation application and Preliminary Amendment dated Dec.
`13, 2006.
`Voluntary Amendment dated Aug. 15, 2006 in TW Appl. No.
`94143175.
`PCT International Search Report and Written Opinion for Applica(cid:173)
`tion No. PCT/US05/44781 dated Oct. 3, 2006.
`Specification dated Sep. 2, 2005, for U.S. Appl. No. 11/218,652.
`Office Action issued Sep. 21, 2005 in U.S. Appl. No. 11/100,856.
`Office Action issued on Oct. 25, 2005, in U.S. Appl. No. 10/954,182.
`Office Action issued on Oct. 3, 2005 in U.S. Appl. No. 10/650,461.
`Agrawal, G.P., in: Fiber-Optic Communication Systems, 2nd Edi(cid:173)
`tion, John Wiley & Sons, New York, pp. 361-399 and 415 (1997).
`Cocorullo, G. et al., "Amorphous silicon waveguides and light modu(cid:173)
`lators for integrated photonics realized by low-temperature plasma(cid:173)
`enhanced chemical-vapor deposition," Optics Lett. 21(24):2002-
`2004 (1996).
`Masuda, H. & Kawai, S., "Wide-band and gain-flattened hybrid fiber
`amplifier consisting of an EDFA and a multiwavelength pumped
`raman amplifier," IEEE Photonics Technology Le