A CMOSMicromachined Capacitive Sensor Array for Fingerprint Dete...
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`https://ieeexplore.ieee.org/document/6020720
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`Journals & Magazines > IEEE Sensors Journal > Volume: 12 Issue: 5 e
`
`A CMOS Micromachined Capacitive Sensor Array for Fingerprint Detection
`
`Publisher: IEEE
`
`B por
`
`Jiun-Chieh Liu ; Yung-Shih Hsiung; Michael S.-C.Lu
`
`All Authors ee
`
`25
`Paper
`Citations
`
`7
`Patent
`Citations
`
`1631
`Full
`Text Views
`
`Abstract
`
`
`DocumentSections
`
`Abstract:Biometric techniques, such asfingerprint detection, have been widely applied to identify a specific user for
`security and safety reasons. This work presents anintegrate... View more
`
`I.
`
`introduction
`
`I Methods
`
`Ill. Experiment
`V. Di
`ion
`Conclusion
`
`and
`
`Auth
`umnors
`.
`Figures
`
`> Metadata
`Abstract:
`
`Biometric techniques, such asfingerprint detection, have been widely applied to identify a specific user for security and
`safety reasons. This work presents an integrated capacitive sensorarray for fingerprint detection based on the
`difference of pressures induced bythe ridges andvalleys ofa finger tip. The 8 x 32 sensing membranes are released by
`wetetch of the complementary metal oxide semiconductor (CMOS) metal layers and no additionalthin-film deposition is
`required to form the capacitive electrodes. Each membrane contains the CMOSdielectric and metallayers with a total
`thickness of 3.375 um. Thesize of each sensing pixel is 65 x 65 ym 3 , equivalentto an imaging resolution of 390 dpi.
`The sensing capacitance and capacitive sensitivity are 12 fF and 1.41 fF/MPa, respectively. The measured spring
`constant of the membraneis close to the simulated value of 1400 N/m.Part ofthe fingerprint image is successfully
`produced by the CMOSsensorarray.
`
`References
`
`Published in: IEEE Sensors Journal ( Volume: 12 , Issue: 5, May 2012)
`
`Citati
`
`ions
`
`Keywords
`
`Metrics
`
`More L ke This
`
`Referenced in:IEEE Biometrics Compendium, IEEE RFIC Virtual Journal, IEEE RFID Virtual Journal
`Page(s): 1004 - 1010
`INSPEC Accession Number: 12650283
`
`Date of Publication: 15 September 2011 e
`
`> ISSN Information:
`
`DOI: 10.1109/JSEN.2011.2167748
`.
`Publisher: IEEE
`
`int
`Sion
`|. Introduction
`The use of biometric techniques, such aerecogn
`
`Reads
`‘i
`in ofhuman op ec , Iris patterns, and
`CARDWAREEXHIBIT 2029, Page 1 of 4
`SAMSUNG V. CARDWARE PGR2023-00012
`5/15/2023, 2:20 PM
`
`lof4
`
`-= Contents
`
`
`
`https://ieeexplore.ieee.org/document/6020720
`
`IEEE.org
`
`IEEE Xplore
`
`\IEEESA
`
`IEEE Spectrum’ More Sites
`
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`Subscribe
`
`Create
`Cart
`&+ WAccount
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`
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`Browse Y My Settings v Helpv
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`Journals & Magazines > IEEE Sensors Journal > Volume: 12 Issue: 5 e
`
`A CMOS Micromachined Capacitive Sensor Array for Fingerprint Detection
`
`Publisher: IEEE
`
`B por
`
`Jiun-Chieh Liu ; Yung-Shih Hsiung; Michael S.-C.Lu
`
`All Authors ee
`
`25
`Paper
`Citations
`
`7
`Patent
`Citations
`
`1631
`Full
`Text Views
`
`Abstract
`
`
`DocumentSections
`
`Abstract:Biometric techniques, such asfingerprint detection, have been widely applied to identify a specific user for
`security and safety reasons. This work presents anintegrate... View more
`
`I.
`
`introduction
`
`I Methods
`
`Ill. Experiment
`V. Di
`ion
`Conclusion
`
`and
`
`Auth
`umnors
`.
`Figures
`
`> Metadata
`Abstract:
`
`Biometric techniques, such asfingerprint detection, have been widely applied to identify a specific user for security and
`safety reasons. This work presents an integrated capacitive sensorarray for fingerprint detection based on the
`difference of pressures induced bythe ridges andvalleys ofa finger tip. The 8 x 32 sensing membranes are released by
`wetetch of the complementary metal oxide semiconductor (CMOS) metal layers and no additionalthin-film deposition is
`required to form the capacitive electrodes. Each membrane contains the CMOSdielectric and metallayers with a total
`thickness of 3.375 um. Thesize of each sensing pixel is 65 x 65 ym 3 , equivalentto an imaging resolution of 390 dpi.
`The sensing capacitance and capacitive sensitivity are 12 fF and 1.41 fF/MPa, respectively. The measured spring
`constant of the membraneis close to the simulated value of 1400 N/m.Part ofthe fingerprint image is successfully
`produced by the CMOSsensorarray.
`
`References
`
`Published in: IEEE Sensors Journal ( Volume: 12 , Issue: 5, May 2012)
`
`Citati
`
`ions
`
`Keywords
`
`Metrics
`
`More L ke This
`
`Referenced in:IEEE Biometrics Compendium, IEEE RFIC Virtual Journal, IEEE RFID Virtual Journal
`Page(s): 1004 - 1010
`INSPEC Accession Number: 12650283
`
`Date of Publication: 15 September 2011 e
`
`> ISSN Information:
`
`DOI: 10.1109/JSEN.2011.2167748
`.
`Publisher: IEEE
`
`int
`Sion
`|. Introduction
`The use of biometric techniques, such aerecogn
`
`Reads
`‘i
`in ofhuman op ec , Iris patterns, and
`CARDWAREEXHIBIT 2029, Page 1 of 4
`SAMSUNG V. CARDWARE PGR2023-00012
`5/15/2023, 2:20 PM
`
`lof4
`
`-= Contents
`
`
`
`A CMOSMicromachined Capacitive Sensor Array for Fingerprint Dete...
`
`https://ieeexplore.ieee.org/document/6020720
`
`fingerprints, has becomepopular foridentifying a specific user due to security and safety reasons.
`Conventionalfingerprint detection is based on optical measurement[1] where the finger surface is
`illuminated by visible light and photographed,and the imageis then stored for subsequent
`identification. Optical sensors are costly and bulky due to mechanical assembly ofthe prism,lens,
`and camera. Detected image may be affected by stained fingers, and an optical sensor may not be
`sufficiently sensitive to the differences betweena printed imageofa fingerprint anda true fingerprint.
`Thermal[2], [3], piezoresistive [4], and capacitive [5}-[12] fingerprint sensors have beenstudied in
`accordancewith the advancesin microfabrication and integrated-circuit technologies. Hanetal. [2]
`reported an array of micro heaters as the sensing elements to detect the temperature differences
`related to touching ridges and nontouchingvalleys ofa finger tip. The chip developed by ATMEL[3]
`utilized a pyroelectric material for detection. The piezoresistive cantilever array demonstrated by
`Chariotet al. [4] was monolithically integratedin a triple metal CMOSprocess.
`
`Authors
`
`Figures
`
`References
`
`Citations
`
`Keywords
`
`Metrics
`
`v
`
`v
`
`v
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`v
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`v
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`More Like This
`
`128 x 96 Pixel parallel three dimensional integrated CMOS image sensors with 16 bit A/D converters: By direct bonding with embedded Au electrodes
`2015 IEEE SOI 3D Subthreshold Microelectronics Technology Unified Conference (S3S)
`Published: 2015
`
`Modeling and Analysis of Charged Particle CMOS Image Sensor Arrays
`IEEE Transactions on Nuclear Science
`Published: 2009
`
`Show More
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`2 of 4
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