TC255P
` 336- × 244-PIXEL CCD IMAGE SENSOR
`
`
` SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`DUAL-IN-LINE PACKAGE
`(TOP VIEW)
`
`IAG2
`
`ADB
`
`SUB
`
`OUT
`
`1
`
`2
`
`3
`
`4
`
`8
`
`7
`
`6
`
`5
`
`ABG
`
`IAG1
`
`SAG
`
`SRG
`
`• Medium-Resolution, Solid-State Image
`Sensor for Low-Cost B/W TV Applications
`• 324(H) x 243(V) Active Elements in Image
`Sensing Area
`• 10-µm Square Pixels
`• Fast Clear Capability
`• Electronic Shutter Function From
`1/60–1/50000 s
`• Low Dark Current
`• Electron-Hole Recombination Antiblooming
`• Dynamic Range . . . 66 dB Typical
`• High Sensitivity
`• High Blue Response
`• 8-Pin Dual-In-Line Plastic Package
`• 4-mm Image-Area Diagonal
`• Solid-State Reliability With No Image
`Burn-In, Residual Imaging, Image
`Distortion, Image Lag, or Microphonics
`• High Photoresponse Uniformity
`
`description
`
`The TC255P is a frame-transfer charge-coupled device (CCD) designed for use in B/W NTSC TV and special-
`purpose applications where low cost and small size are desired.
`
`The image-sensing area of the TC255P is configured in 243 lines with 336 elements in each line. Twelve
`elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
`on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
`by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.
`
`The sensor can be operated in a noninterlace mode as a 324(H) by 243(V) sensor with low dark current. The
`device can also be operated in an interlace mode, electronically displacing the image-sensing elements during
`the charge integration in alternate fields, and effectively increasing the vertical resolution and minimizing
`aliasing.
`
`One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for
`an electronic-shutter function comparable to interline-transfer and frame-interline-transfer sensors without the
`loss of sensitivity and resolution inherent in those technologies.
`The charge is converted to signal voltage with a 12-µV per electron conversion factor by a high-performance
`charge-detection structure with built-in automatic reset and a voltage-reference generator. The signal is
`buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability.
`
`The TC255P uses TI-proprietary virtual-phase technology, which provides devices with high blue response, low
`dark signal, high photoresponse uniformity, and single-phase clocking. The TC255P is characterized for
`operation from –10°C to 45°C.
`
`This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
`or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
`circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
`damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
`allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
`Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
`
`PRODUCTION DATA information is current as of publication date.
`Products conform to specifications per the terms of Texas Instruments
`standard warranty. Production processing does not necessarily include
`testing of all parameters.
`
`Copyright  2003, Texas Instruments Incorporated
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 1 of 18Ex.1016 / Page 1 of 18
`1
`
`TESLA, INC.TESLA, INC.
`
`

`

`
`
`ABG
`
`IAG1
`
`SAG
`
`SRG
`
`78
`
`6
`
`5
`
`TC255P
`336- × 244-PIXEL CCD IMAGE SENSOR
`
`SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`functional block diagram
`
`1
`
`2
`
`4
`
`3
`
`IAG2
`
`ADB
`
`OUT
`
`SUB
`
`Image Area With
`Blooming Protection
`
`Dark-Reference Elements
`
`Clear Line
`
`Storage Area
`
`2 Dummy
`Elements
`
`Amplifier
`
`Serial Register
`
`ÉÉÉÉÉÉÉÉÉÉ
`ÉÉÉÉÉÉÉÉÉÉ
`
`Clearing Drain
`
`2
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 2 of 18Ex.1016 / Page 2 of 18
`
`TESLA, INC.TESLA, INC.
`
`

`

` TC255P
` 336- × 244-PIXEL CCD IMAGE SENSOR
`
`
` SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`sensor topology diagram
`
`324 Active Pixels
`
`12
`
`243 Lines
`
`Effective-Imaging Area
`
`1 Dark Line
`
`Buffer Column
`
`1 Clear Line
`
`244 Lines
`
`Storage Area
`
`Dummy Pixels
`
`2
`
`12
`
`Optical
`Black
`(OPB)
`
`336 Pixels
`
`324
`
`Active Pixels
`
`1
`
`Dummy Pixel
`
`TERMINAL
`NAME
`NO.
`ABG
`8
`ADB
`2
`SUB
`3
`IAG1
`7
`IAG2
`1
`OUT
`4
`SAG
`6
`SRG
`5
`
`Terminal Functions
`
`
`
`I/OI/O
`
`I
`I
`
`I
`I
`O
`I
`I
`
`
`
`DESCRIPTIONDESCRIPTION
`
`Antiblooming gate
`Supply voltage for amplifier-drain bias
`Substrate
`Image-area gate 1
`Image-area gate 2
`Output
`Storage-area gate
`Serial-register gate
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 3 of 18Ex.1016 / Page 3 of 18
`3
`
`TESLA, INC.TESLA, INC.
`
`

`

`TC255P
`336- × 244-PIXEL CCD IMAGE SENSOR
`
`SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`detailed description
`
`
`
`The TC255P consists of five basic functional blocks: 1) the image-sensing area, 2) the image-clear line, 3) the
`image-storage area, 4) the serial register, and 5) the charge-detection node and output amplifier.
`
`image-sensing area
`
`Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are
`shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are
`generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate
`is activated by the application of a burst of pulses every horizontal-blanking interval. This prevents blooming
`caused by the spilling of charge from overexposed elements into neighboring elements. To generate the dark
`reference that is necessary in subsequent video-processing circuits for restoration of the video-black level, there
`are 12 columns of elements on the left edge of the image-sensing area shielded from light. There is also one
`column of elements on the right side of the image-sensing area and one line between the image-sensing area
`and the image-clear line.
`
`10 µm
`
`Clocked Barrier
`
`Light
`
`10 µm
`
`Virtual Barrier
`
`Antiblooming Gate
`
`Antiblooming
`Clocking Levels
`
`IAG
`
`ABG
`
`Virtual Well
`
`Clocked Well
`
`Accumulated Charge
`
`Figure 1. Charge-Accumulation Process
`
`SAG
`
`Clocked Phase
`
`Virtual Phase
`
`Channel Stops
`
`Figure 2. Charge-Transfer Process
`
`image-clear line
`During start-up or electronic-shutter operations, it is necessary to clear the image area of charge without
`transferring it to the storage area. In such situations, the two image-area gates are clocked 244 times without
`clocking the storage-area gate. The charge in the image area is then cleared through the image-clear line.
`
`4
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 4 of 18Ex.1016 / Page 4 of 18
`
`TESLA, INC.TESLA, INC.
`
`

`

` TC255P
` 336- × 244-PIXEL CCD IMAGE SENSOR
`
`
` SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`image-storage area
`
`After exposure, the image-area charge packets are transferred through the image-clear line to the storage area.
`The stored charge is then transferred line by line into the serial register for readout. Figure 3 illustrates the timing
`to (1) transfer the image to the storage area and (2) to transfer each line from the storage area to the serial
`register.
`
`serial register
`
`After each line is clocked into the serial register, it is read out pixel by pixel. Figure 3 illustrates the serial-register
`clock sequence.
`
`244 Cycles
`
`Composite
`Blank
`
`ABG
`
`IAG1
`
`IAG2
`
`SAG
`
`SRG
`
`Integration Time
`
`Electronic
`Shutter
`Operation
`244 Clocks
`
`244 Clocks
`
`t = 80 ns
`
`339 Cycles
`
`IAG1
`
`IAG2
`
`SAG
`
`SRG
`
`SAG
`
`SRG
`
`1)
`
`2)
`
`3)
`
`1) End of serial readout of line
`2) Transfer of new line to serial register
`3) Beginning of readout of new line
`
`Figure 3. Timing Diagram
`
`Expanded Section of Parallel Transfer
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 5 of 18Ex.1016 / Page 5 of 18
`5
`
`TESLA, INC.TESLA, INC.
`
`

`

`TC255P
`336- × 244-PIXEL CCD IMAGE SENSOR
`
`SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`charge-detection node and output amplifier
`
`
`
`The buffer amplifier converts charge into a video signal. Figure 4 shows the circuit diagram of the
`charge-detection node and output amplifier. As charge is transferred into the detection node, the potential of
`this node changes in proportion to the amount of signal received. This change is sensed by an MOS transistor
`and, after proper buffering, the signal is supplied to the output terminal of the image sensor. After the potential
`change is sensed, the node is reset to a reference voltage supplied by an on-chip reference generator. The reset
`is accomplished by a reset gate that is connected internally to the serial register. The detection node and buffer
`amplifier are located a short distance from the edge of the storage area; therefore, two dummy cells are used
`to span this distance.
`
`Reference
`Generator
`
`Q0
`
`Q1
`
`SRG
`
`QR
`
`Detection
`Node
`
`ADB
`
`Q2
`
`Q3
`
`Q5
`
`VO
`
`Q4
`
`Q6
`
`Figure 4. Buffer Amplifier and Charge-Detection Node
`
`6
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 6 of 18Ex.1016 / Page 6 of 18
`
`TESLA, INC.TESLA, INC.
`
`

`

` TC255P
` 336- × 244-PIXEL CCD IMAGE SENSOR
`
`
` SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`spurious-nonuniformity specification
`
`The spurious-nonuniformity specification of the TC255P is based on several sensor characteristics:
`• Amplitude of the nonuniform pixel
`• Polarity of the nonuniform pixel
`– Black
`– White
`• Column amplitude
`The CCD sensor is characterized in both an illuminated condition and a dark condition. In the dark condition,
`the nonuniformity is specified in terms of absolute amplitude as shown in Figure 5. In the illuminated condition,
`the nonuniformity is specified as a percentage of the total illumination as shown in Figure 6.
`
`The specification for the TC255P is as follows:
`
`WHITE SPOT
`(DARK)
`
`WHITE SPOT
`(ILLUMINATED)
`
`COLUMN
`(DARK)
`
`COLUMN
`(ILLUMINATED)
`
`BLACK SPOT
`(ILLUMINATED)
`
`x < 15%
`x < 1 mV
`x < 0.5 mV
`x < 15%
`x < 15 mV
`† A white/black pair nonuniformity will be no more than 2 pixels even for integration times of 1/60 second.
`
`WHITE/BLACK†
`PAIR
`
`x < 9mV
`
`The conditions under which this specification is defined are as follows:
`• The integration time is 1/60 second except for illuminated white spots, illuminated black spots and
`white/black pair nonuniformities; in these three cases, the integration time is 1/240 second.
`• The temperature is 45°C.
`• The CCD video-output signal is 60 mV ± 10 mV.
`
`mV
`
`Amplitude
`
`%
`
`% of Total
`Illumination
`
`Figure 5. Pixel Nonuniformity,
`Dark Condition
`
`Figure 6. Pixel Nonuniformity,
`Illuminated Condition
`
`t
`
`t
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 7 of 18Ex.1016 / Page 7 of 18
`7
`
`TESLA, INC.TESLA, INC.
`
`

`

`TC255P
`336- × 244-PIXEL CCD IMAGE SENSOR
`
`
`
`SOCS057A – JUNE 1996 – REVISED MARCH 2003
`absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
` 0 V to 15 V
`Supply voltage range, VCC: ADB (see Note 1)
`Input voltage range, VI: ABG, IAG1, IAG2, SAG, SRG
` –15 V to 15 V
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
` –10°C to 45°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`
`Operating free-air temperature range, TA
` –30°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`
`Storage temperature range, TSTG
`† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
`functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
`implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
`NOTE 1: All voltages are with respect to the substrate terminal.
`
`recommended operating conditions
`
`Supply voltage, VCC
`Substrate bias voltage
`
`Input voltage, VI
`
`
`
`Clock frequency f lClock frequency, fclock
`k
`
`ADB
`
`
`
`IAG1 IAG2IAG1, IAG2
`
`
`
`SAGSAG
`
`
`
`SRGSRG
`
`ABG
`
`High level
`Low level
`High level
`Low level
`High level
`Low level
`High level
`Intermediate level‡
`Low level
`
`ABG
`IAG1, IAG2
`SAG
`SRG
`OUT
`
`Load capacitive
`Plastic package thermal conductivity
`Operating free-air temperature, TA
`‡ Adjustment is required for optimum performance.
`
`MIN NOM MAX
`11
`12
`13
`0
`2
`–10
`2
`–10
`2
`–10
`4
`–2.5
`–7
`6.25
`
`1.5
`–10.5
`1.5
`–10.5
`1.5
`–10.5
`3.5
`
`–8
`
`2.5
`–9.5
`2.5
`–9.5
`2.5
`–9.5
`4.5
`
`–6
`12.5
`25
`12.5
`12.5
`6
`
`6.25
`
`0.008
`
`–10
`
`45
`
`UNIT
`V
`V
`
`V
`
`
`
`MHzMHz
`
`pF
`J/cm•s•°C
`°C
`
`8
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 8 of 18Ex.1016 / Page 8 of 18
`
`TESLA, INC.TESLA, INC.
`
`

`

`electrical characteristics over recommended operating ranges of supply voltage and operating
`free-air temperature (unless otherwise noted)
`
` TC255P
` 336- × 244-PIXEL CCD IMAGE SENSOR
`
`
` SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`PARAMETER
`
`Antiblooming disabled (see Note 3)
`
`Dynamic range (see Note 2)
`Charge-conversion factor
`Charge-transfer efficiency (see Note 4)
`Signal-response delay time, τ (see Note 5)
`Gamma (see Note 6)
`Output resistance
`Noise-equivalent signal without correlated double sampling
`Noise-equivalent signal with correlated double sampling (see Note 7)
`ADB (see Note 8)
`SRG (see Note 9)
`ABG (see Note 10)
`
`Rejection ratio
`
`MIN
`
`11
`
`0.97
`
`13
`
`Supply current
`
`
`
`Input capacitance CiInput capacitance, Ci
`
`IAG1, IAG2
`SRG
`ABG
`SAG
`
`MAX
`
`0.99
`
`TYP†
`66
`13
`12
`0.9995 0.99999
`20
`0.98
`350
`62
`31
`15
`50
`40
`5
`1000
`22
`850
`2000
`
`18
`
`10
`
`UNIT
`dB
`µV/e
`
`ns
`
`Ω
`
`electrons
`electrons
`
`dB
`
`mA
`
`
`
`pFpF
`
`† All typical values are at TA = 25°C.
`NOTES: 2. Dynamic range is – 20 times the logarithm of the mean-noise signal divided by saturation-output signal.
`3. For this test, the antiblooming gate must be biased at the intermediate level.
`4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using
`an electrical-input signal.
`5. Signal-response delay time is the time between the falling edge of the SRG pulse and the output-signal valid state.
`6. Gamma (γ) is the value of the exponent is the equation below for two points on the linear portion of the transfer-function curve (this
`value represents points near saturation).
`
`
`
`ǒExposure (2)Exposure (1)Ǔg
`
`
`
`+ ǒOutput signal (2)Output signal (1)Ǔ
`
`7. A three-level serial-gate clock is necessary to implement correlated double sampling.
`8. ADB rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB (see Figure 11
`for measured ADB rejection ratio as a function of frequency).
`9. SRG rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRG.
`10. ABG rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 9 of 18Ex.1016 / Page 9 of 18
`9
`
`TESLA, INC.TESLA, INC.
`
`

`

`TC255P
`336- × 244-PIXEL CCD IMAGE SENSOR
`
`SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`optical characteristics, TA = 40°C (unless otherwise noted)
`
`
`
`Sensitivity
`Sensitivity
`
`PARAMETER
`No IR filter
`With IR filter
`Antiblooming disabled, Interlace off
`Antiblooming enabled
`
`Interlace disabled,
`
`TA = 21°C
`
`Output signal = 60 mV ± 10 mV
`Output signal = 60 mV ± 10 mV
`
`TYP
`350
`45
`750
`Saturation signal, Vsat (see Note 11)
`250
`Maximum usable signal, Vuse
`200
`Blooming-overload ratio (see Note 12)
`62500
`Image-area well capacity
`0.00012
`Smear (see Notes 13 and 14)
`0.20
`Dark current
`200
`Dark signal
`15
`Pixel uniformity
`0.5
`Column uniformity
`15
`Shading
`1/60
`1/15000
`Electronic-shutter capability
`NOTES: 11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
`12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming-overload ratio
`is the ratio of blooming exposure to saturation exposure.
`13. Smear is a measure of the error introduced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
`to the ratio of the single-pixel transfer time to the exposure time using an illuminated section that is 1/10 of the image-area vertical
`height with recommended clock frequencies.
`14. The exposure time is 16.67 ms, the fast-dump clocking rate during vertical transfer is 12.5 MHz, and the illuminated section is 1/10
`of the height of the image section.
`
`MIN
`
`MAX
`
`UNIT
`
`600
`200
`100
`50000
`
`mV/lx
`mV/lx
`
`mV
`mV
`
`electrons
`
`nA/cm2
`µV
`mV
`mV
`%
`s
`
`timing requirements
`
`tr
`
`tf
`
`Rise time
`
`Fall time
`
`ABG
`IAG1, IAG2 (fast clear)
`IAG1, IAG2 (image transfer)
`SAG
`SRG
`ABG
`IAG1, IAG2 (fast clear)
`IAG1, IAG2 (image transfer)
`SAG
`SRG
`
`MIN NOM MAX
`10
`40
`10
`10
`10
`20
`10
`20
`10
`40
`10
`40
`10
`10
`10
`20
`10
`20
`10
`40
`
`UNIT
`
`ns
`
`ns
`
`10
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 10 of 18Ex.1016 / Page 10 of 18
`
`TESLA, INC.TESLA, INC.
`
`

`

` TC255P
` 336- × 244-PIXEL CCD IMAGE SENSOR
`
`
` SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`PARAMETER MEASUREMENT INFORMATION
`
`Blooming Point
`With Antiblooming
`Disabled
`
`Blooming Point
`With Antiblooming
`Enabled
`
`Dependent on
`Well Capacity
`
`Level Dependent
`Upon Antiblooming
`Gate High Level
`
`DR
`
`SNR
`
`Lux
`(light input)
`
`VO
`
`Vsat (min)
`
`Vuse (max)
`
`Vuse (typ)
`
`Vn
`
`DR (dynamic range) + 20 log
`
`ǒVsat Ǔ
`Vn
`
`dB
`
`SNR (signal-to-noise-rate) + 20 log
`
`ǒVuse Ǔ
`Vn
`
`dB
`
`Vn = noise-floor voltage
`Vsat (min) = minimum saturation voltage
`Vuse (max) = maximum usable voltage
`Vuse (typ) = typical user voltage (camera white clip)
`NOTES: A. Vuse (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse
`(max).
`B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering
`the Vuse (typ),
`the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.
`
`Figure 7. Typical Vsat, Vuse Relationship
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 11 of 18Ex.1016 / Page 11 of 18
`11
`
`TESLA, INC.TESLA, INC.
`
`

`

`
`
`1.5 V to 2.5 V
`
`– 8.5 V to – 10 V
`
`0%
`
`TC255P
`336- × 244-PIXEL CCD IMAGE SENSOR
`
`SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`SRG
`
`OUT
`
`90%
`100%
`
`Sample
`and
`Hold
`
`PARAMETER MEASUREMENT INFORMATION
`
`– 8.5 V
`
`CCD Delay
`
`t
`
`10 ns
`
`15 ns
`
`Figure 8. SRG and CCD Output Waveforms
`
`12
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 12 of 18Ex.1016 / Page 12 of 18
`
`TESLA, INC.TESLA, INC.
`
`

`

` TC255P
` 336- × 244-PIXEL CCD IMAGE SENSOR
`
`
` SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`TYPICAL CHARACTERISTICS
`
`CCD SPECTRAL RESPONSIVITY
`
`300
`
`400
`
`500
`
`600
`
`700
`
`800
`
`900
`
`1000
`
`Incident Wavelength – nm
`
`Figure 9
`
`CCD QUANTUM EFFICIENCY
`
`300
`
`400
`
`500
`
`600
`
`700
`
`800
`
`900
`
`1000
`
`Incident Wavelength – nm
`
`Figure 10
`
`1
`
`0.1
`
`0.01
`
`0.001
`
`1
`
`0.1
`
`0.01
`
`0.001
`
`Responsivity – A/W
`
`Quantum Efficiency
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 13 of 18Ex.1016 / Page 13 of 18
`13
`
`TESLA, INC.TESLA, INC.
`
`

`

`TC255P
`336- × 244-PIXEL CCD IMAGE SENSOR
`
`SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`TYPICAL CHARACTERISTICS
`
`
`
`20
`
`18
`
`16
`
`14
`
`12
`
`10
`
`2468
`
`0
`
`ADB Rejection Ratio – dB
`
`0
`
`5
`
`10
`
`15
`
`20
`
`25
`
`f – Frequency – MHz
`
`Figure 11. Measured ADB Rejection Ratio as a Function of Frequency
`
`5
`
`10
`
`15
`
`20
`
`25
`
`f – Frequency – MHz
`
`300
`
`250
`
`200
`
`150
`
`100
`
`50
`
`0
`
`0
`
`Noise-Power Spectral Density –nV/rt Hz
`
`Figure 12. Noise-Power Spectral Density
`
`14
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 14 of 18Ex.1016 / Page 14 of 18
`
`TESLA, INC.TESLA, INC.
`
`

`

` TC255P
` 336- × 244-PIXEL CCD IMAGE SENSOR
`
`
` SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`APPLICATION INFORMATION
`
`VCC
`
`WIN
`
`16
`
`15
`
`14
`
`13
`
`12
`
`11
`
`5678910
`
`4 3 2 1
`
`VABM
`
`VABL
`
`VIA
`
`VS
`
`VSM
`
`24
`23
`22
`21
`20
`19
`18
`17
`16
`15
`14
`13
`
`TMC57253
`
`VAB
`VCC
`GND
`EN
`ABIN
`ABMIN
`IA1IN
`IA2IN
`SAIN
`SRIN
`SRMIN
`GND
`
`VABM
`ABOUT
`VABL
`GND
`IA1OUT
`VIA
`IA2OUT
`GND
`SAOUT
`VS
`SROUT
`VSM
`
`1 2 3 4 5 6 7 8 9
`
`10
`11
`12
`
`VAB
`VCC
`
`ADB
`SUB
`
`TC255P
`
`1 2 3 4
`
`IAG2
`ADB
`SUB
`OUT
`
`ABG
`IAG1
`SAG
`SRG
`
`8 7 6 5
`
`VCC
`
`64
`63
`62
`61
`60
`59
`58
`57
`56
`55
`54
`53
`52
`51
`50
`49
`
`TEST1
`TEST2
`TEST3
`GND
`MON1
`MON2
`MON3
`MON4
`EFSEL1
`EFSEL2
`EFSEL3
`MINSEL
`CC
`
`V
`
`TMC57750
`
`DSSEL
`FSSEL
`ABGSEL
`ABG
`ABM
`VCC
`IAG1
`IAG2
`SAG
`GND
`SRG
`SRM
`DLSEL
`PHSEL2
`PHSEL1
`SRGSEL
`
`WSEL1
`WSEL2
`WINDOW
`
`ED
`EU
`TEST4
`CBLK
`CSYNC
`GND
`CPOB1
`CPOB2
`SSEL1
`VCC
`SSEL2
`SSEL3
`VR
`HR
`SHTCOM
`VACT
`
`ED
`EU
`
`CBLK
`CSYNC
`
`CPOB1
`
`VCC
`
`17
`18
`19
`20
`21
`22
`23
`24
`25
`26
`27
`28
`29
`30
`31
`32
`
`FI
`VD
`HD
`VCC
`PUC
`SCAN
`CLKIN
`XIN
`XOUT
`XSEL
`MCLK/2
`MCLK/4
`GND
`CDS
`S/H
`SHTMON
`
`33
`
`34
`
`35
`
`36
`
`37
`
`38
`
`39
`
`40
`
`41
`
`42
`
`43
`
`44
`
`45 46 47 48
`
`VCC
`
`Buffer
`and
`Preamp
`
`VCC
`
`0.1 µF
`
`100 µF
`
`75Ω
`CSYNC
`CPOB1
`
`VCC
`
`0.1 µF
`
`33
`32
`31
`30
`29
`28
`27
`26
`25
`24
`23
`
`44
`
`43
`
`42
`
`41
`
`40
`
`39
`
`38
`
`37 36 35 34
`
`V
`
`CBLK
`SULVL
`SYNCLVL
`HICPLVL
`VREF
`HIB
`LOB
`IRISFIL
`WIDTH
`CENTER
`CC
`
`SN761210
`
`DELAYIN
`YIN
`AMPOUT
`CHD
`GAINSEL
`AMPTUNE
`AGCFB
`GND
`HOBP
`WINDOW
`IRIS
`
`VCC
`VIDEO
`GND
`CSYNC
`CLAMP
`CHARAIN
`VCC
`YHIN
`APOUT
`APGAIN
`APFIL
`
`654321
`
`7 8 9
`
`0.1 µF
`
`0.1 µF
`
`S/H
`CDS
`
`4.7 µF
`
`Low-Pass
`FIlter
`
`S/H
`CDS
`
`VCC
`
`5 V
`GND
`
`OUT
`
`25 MHz
`
`DC VOLTAGES
`VIA, VM, VS
`VCC
`ADB
`SUB
`VABM
`HICPLVL
`SULVL
`SYNCLVL
`CTRLVL
`WIDLVL
`AMPTUNE
`VAB
`VABL
`
`12 V
`5 V
`22 V
`10 V
`7.5 V
`1.9 V
`1.2 V
`1.2 V
`1.0 V
`4.0 V
`1.0 V
`14 V
`3 V
`
`DATAIN
`S/HFB
`SHP
`SHD1
`SHD2
`GND
`AGCFIL
`AGCLVL
`AGCMAX
`10
`AGCOUT
`11 AMPIN
`
`CBLK
`SULVL
`SYNCLVL
`HICPLVL
`
`EU
`ED
`
`WIDLVL
`TRLVL
`CC
`
`V C
`
`(see
`Note B)
`
`4.7 µF
`
`VCC
`
`NOTES: A. Decoupling capacitors are not shown.
`B. TI recommends designing AC coupled systems.
`
`AMPTUNE
`WIN
`CPOB1
`
`12
`
`13
`
`14
`
`15
`
`16
`
`17
`
`18
`
`19 20 21 22
`
`0.1 µF
`
`To Monitor
`
`Figure 13. Typical Application Circuit Diagram
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 15 of 18Ex.1016 / Page 15 of 18
`15
`
`TESLA, INC.TESLA, INC.
`
`

`

`TC255P
`336- × 244-PIXEL CCD IMAGE SENSOR
`
`SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`APPLICATION INFORMATION
`
`
`
`DEVICE
`TMC57750PM
`TMC57253DSB
`
`PACKAGE
`64 pin flatpack
`24 pin small outline
`
`SUPPORT CIRCUITS
`APPLICATION
`Timing generator
`Driver
`
`SN761210FR
`
`44 pin flatpack
`
`Video processor
`
`FUNCTION
`EIA-170 timing and CCD control signals
`Driver for ABG, IAG1, IAG2, SAG, and SRG
`SYNC, BLANK, AGC, IRIS, CLAMP, S/H, CDS, and
`WINDOW
`
`Figure 13. Typical Application Circuit Diagram (Continued)
`
`16
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 16 of 18Ex.1016 / Page 16 of 18
`
`TESLA, INC.TESLA, INC.
`
`

`

` TC255P
` 336- × 244-PIXEL CCD IMAGE SENSOR
`
`
` SOCS057A – JUNE 1996 – REVISED MARCH 2003
`
`MECHANICAL DATA
`
`The package for the TC255P consists of a plastic base, a glass window, and an 8-lead frame. The glass window is
`sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and
`fit into mounting holes with 2,54 mm (0.1 in) center-to-center spacings.
`
`4040679
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`
`Ex.1016 / Page 17 of 18Ex.1016 / Page 17 of 18
`17
`
`TESLA, INC.TESLA, INC.
`
`

`

`IMPORTANT NOTICE
`
`Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,
`enhancements, improvements, and other changes to its products and services at any time and to discontinue
`any product or service without notice. Customers should obtain the latest relevant information before placing
`orders and should verify that such information is current and complete. All products are sold subject to TI’s terms
`and conditions of sale supplied at the time of order acknowledgment.
`
`TI warrants performance of its hardware products to the specifications applicable at the time of sale in
`accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI
`deems necessary to support this warranty. Except where mandated by government requirements, testing of all
`parameters of each product is not necessarily performed.
`
`TI assumes no liability for applications assistance or customer product design. Customers are responsible for
`their products and applications using TI components. To minimize the risks associated with customer products
`and applications, customers should provide adequate design and operating safeguards.
`
`TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,
`copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process
`in which TI products or services are used. Information published by TI regarding third–party products or services
`does not constitute a license from TI to use such products or services or a warranty or endorsement thereof.
`Use of such information may require a license from a third party under the patents or other intellectual property
`of the third party, or a license from TI under the patents or other intellectual property of TI.
`
`Reproduction of information in TI data books or data sheets is permissible only if reproduction is without
`alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction
`of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for
`such altered documentation.
`
`Resale of TI products or services with statements different from or beyond the parameters stated by TI for that
`product or service voids all express and any implied warranties for the associated TI product or service and
`is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.
`
`Mailing Address:
`
`Texas Instruments
`Post Office Box 655303
`Dallas, Texas 75265
`
`Copyright  2003, Texas Instruments Incorporated
`
`
`Ex.1016 / Page 18 of 18Ex.1016 / Page 18 of 18
`
`TESLA, INC.TESLA, INC.
`
`