throbber
JEDEC
`STANDARD
`
`DDR3 SDRAM
`
`JESD79-3C
`
`(Revision of Jesd79-3B, April 2008)
`
`NOVEMBER 2008
`
`JEDEC SOLID STATE TECHNOLOGY ASSOCIATION
`
`Micron Technology Inc. et al.
`Ex. 1020, p. i
`
`

`

`NOTICE
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`
`Micron Technology Inc. et al.
`Ex. 1020, p. ii
`
`

`

`PLEASE!
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`
`Micron Technology Inc. et al.
`Ex. 1020, p. iii
`
`

`

`Micron TechnologyInc. etal.
`Ex. 1020, p. iv
`
`Micron Technology Inc. et al.
`Ex. 1020, p. iv
`
`

`

`Micron TechnologyInc. etal.
`Ex. 1020, p. v
`
`Micron Technology Inc. et al.
`Ex. 1020, p. v
`
`

`

`JEDEC Standard No. 79-3C
`
`Contents
`1 Scope..........................................................................................................................................1
`2 DDR3 SDRAM Package Pinout and Addressing ......................................................................3
`2.1 DDR3 SDRAM x4 Ballout using MO-207........................................................................3
`2.2 DDR3 SDRAM x8 Ballout using MO-207........................................................................4
`2.3 DDR3 SDRAM x16 Ballout using MO-207......................................................................5
`2.4 Stacked / dual-die DDR3 SDRAM x4 Ballout using MO-207 ..........................................6
`2.5 Stacked / dual-die DDR3 SDRAM x8 Ballout using MO-207 ..........................................7
`2.6 Stacked / dual-die DDR3 SDRAM x16 Ballout using MO-207 ........................................8
`2.7 Quad-stacked / Quad-die DDR3 SDRAM x4 Ballout using MO-207...............................9
`2.8 Quad-stacked / Quad-die DDR3 SDRAM x8 Ballout using MO-207.............................10
`2.9 Quad-stacked / Quad-die DDR3 SDRAM x16 Ballout using MO-207...........................11
`2.10 Pinout Description..........................................................................................................13
`2.11 DDR3 SDRAM Addressing...........................................................................................15
`2.11.1 512Mb ....................................................................................................................15
`2.11.2 1Gb..........................................................................................................................15
`2.11.3 2Gb .........................................................................................................................15
`2.11.4 4Gb .........................................................................................................................15
`2.11.5 8Gb .........................................................................................................................16
`3 Functional Description.............................................................................................................17
`3.1 Simplified State Diagram.................................................................................................17
`3.2 Basic Functionality...........................................................................................................18
`3.3 RESET and Initialization Procedure ................................................................................19
`3.3.1 Power-up Initialization Sequence .............................................................................19
`3.3.2 Reset Initialization with Stable Power......................................................................21
`3.4 Register Definition ...........................................................................................................22
`3.4.1 Programming the Mode Registers.............................................................................22
`3.4.2 Mode Register MR0..................................................................................................23
`3.4.3 Mode Register MR1..................................................................................................26
`3.4.4 Mode Register MR2..................................................................................................29
`3.4.5 Mode Register MR3..................................................................................................31
`4 DDR3 SDRAM Command Description and Operation...........................................................33
`4.1 Command Truth Table .....................................................................................................33
`4.2 CKE Truth Table..............................................................................................................35
`4.3 No OPeration (NOP) Command ......................................................................................36
`4.4 Deselect Command ..........................................................................................................36
`4.5 DLL-off Mode..................................................................................................................37
`4.6 DLL on/off switching procedure......................................................................................38
`4.6.1 DLL “on” to DLL “off” Procedure...........................................................................38
`4.6.2 DLL “off” to DLL “on” Procedure...........................................................................39
`4.7 Input clock frequency change ..........................................................................................40
`4.8 Write Leveling .................................................................................................................42
`4.8.1 DRAM setting for write leveling & DRAM termination function in that mode ......43
`4.8.2 Procedure Description...............................................................................................43
`4.8.3 Write Leveling Mode Exit ........................................................................................45
`4.9 Extended Temperature Usage ..........................................................................................46
`
`i
`
`Micron Technology Inc. et al.
`Ex. 1020, p. vi
`
`

`

`JEDEC Standard No. 79-3C
`
`Contents
`
`4.9.1 Self-Refresh Temperature Range - SRT ...................................................................46
`4.10 Multi Purpose Register...................................................................................................48
`4.10.1 MPR Functional Description ..................................................................................49
`4.10.2 MPR Register Address Definition ..........................................................................50
`4.10.3 Relevant Timing Parameters...................................................................................50
`4.10.4 Protocol Example....................................................................................................50
`4.11 ACTIVE Command .......................................................................................................55
`4.12 PRECHARGE Command ..............................................................................................55
`4.13 READ Operation............................................................................................................56
`4.13.1 READ Burst Operation ...........................................................................................56
`4.13.2 READ Timing Definitions
`57
`4.13.3 Burst Read Operation followed by a Precharge......................................................66
`4.14 WRITE Operation ..........................................................................................................68
`4.14.1 DDR3 Burst Operation............................................................................................68
`4.14.2 WRITE Timing Violations......................................................................................68
`4.14.3 Write Data Mask .....................................................................................................69
`4.14.4 tWPRE Calculation.................................................................................................70
`4.14.5 tWPST Calculation .................................................................................................70
`4.15 Refresh Command..........................................................................................................77
`4.16 Self-Refresh Operation...................................................................................................79
`4.17 Power-Down Modes.......................................................................................................81
`4.17.1 Power-Down Entry and Exit...................................................................................81
`4.17.2 Power-Down clarifications - Case 1 .......................................................................86
`4.17.3 Power-Down clarifications - Case 2 .......................................................................87
`4.17.4 Power-Down clarifications - Case 3 .......................................................................88
`4.18 ZQ Calibration Commands ............................................................................................89
`4.18.1 ZQ Calibration Description.....................................................................................89
`4.18.2 ZQ Calibration Timing............................................................................................90
`4.18.3 ZQ External Resistor Value, Tolerance, and Capacitive loading ...........................90
`5 On-Die Termination (ODT).....................................................................................................91
`5.1 ODT Mode Register and ODT Truth Table.....................................................................91
`5.2 Synchronous ODT Mode .................................................................................................92
`5.2.1 ODT Latency and Posted ODT.................................................................................92
`5.2.2 Timing Parameters ....................................................................................................92
`5.2.3 ODT during Reads ....................................................................................................94
`5.3 Dynamic ODT..................................................................................................................96
`5.3.1 Functional Description:.............................................................................................96
`5.3.2 ODT Timing Diagrams .............................................................................................97
`5.4 Asynchronous ODT Mode .............................................................................................102
`5.4.1 Synchronous to Asynchronous ODT Mode Transitions.........................................103
`5.4.2 Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry103
`5.4.3 Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit .106
`5.4.4 Asynchronous to Synchronous ODT Mode during short CKE high and short CKE low
`periods.....................................................................................................................107
`
`ii
`
`Micron Technology Inc. et al.
`Ex. 1020, p. vii
`
`

`

`JEDEC Standard No. 79-3C
`
`Contents
`6 Absolute Maximum Ratings ..................................................................................................109
`6.1 Absolute Maximum DC Ratings....................................................................................109
`6.2 DRAM Component Operating Temperature Range ......................................................109
`7 AC & DC Operating Conditions............................................................................................111
`7.1 Recommended DC Operating Conditions......................................................................111
`8 AC and DC Input Measurement Levels.................................................................................113
`8.1 AC and DC Logic Input Levels for Single-Ended Signals ............................................113
`8.1.1 AC and DC Input Levels for Single-Ended Command and Address Signals.........113
`8.1.2 AC and DC Input Levels for Single-Ended Data Signals.......................................113
`8.2 Vref Tolerances..............................................................................................................114
`8.3 AC and DC Logic Input Levels for Differential Signals ...............................................115
`8.3.1 Differential signal definition...................................................................................115
`8.3.2 Differential swing requirements for clock (CK - CK#) and strobe (DQS - DQS#)115
`8.3.3 Single-ended requirements for differential signals .................................................116
`8.4 Differential Input Cross Point Voltage ..........................................................................117
`8.5 Slew Rate Definitions for Single-Ended Input Signals..................................................119
`8.6 Slew Rate Definitions for Differential Input Signals.....................................................119
`9 AC and DC Output Measurement Levels ..............................................................................121
`9.1 Single Ended AC and DC Output Levels.......................................................................121
`9.2 Differential AC and DC Output Levels .........................................................................121
`9.3 Single Ended Output Slew Rate.....................................................................................122
`9.4 Differential Output Slew Rate........................................................................................123
`9.5 Reference Load for AC Timing and Output Slew Rate .................................................124
`9.6 Overshoot and Undershoot Specifications .....................................................................125
`9.6.1 Address and Control Overshoot and Undershoot Specifications............................125
`9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications.............126
`9.7 34 ohm Output Driver DC Electrical Characteristics ....................................................127
`9.7.1 Output Driver Temperature and Voltage sensitivity...............................................128
`9.8 On-Die Termination (ODT) Levels and I-V Characteristics .........................................130
`9.8.1 On-Die Termination (ODT) Levels and I-V Characteristics ..................................130
`9.8.2 ODT DC Electrical Characteristics.........................................................................131
`9.8.3 ODT Temperature and Voltage sensitivity .............................................................134
`9.9 ODT Timing Definitions................................................................................................134
`9.9.1 Test Load for ODT Timings ...................................................................................134
`9.9.2 ODT Timing Definitions.........................................................................................135
`10 IDD and IDDQ Specification Parameters and Test Conditions...........................................139
`10.1 IDD and IDDQ Measurement Conditions....................................................................139
`10.2 IDD Specifications .......................................................................................................150
`11 Input/Output Capacitance ....................................................................................................153
`11.1 Input/Output Capacitance.............................................................................................153
`12 Electrical Characteristics & AC Timing for DDR3-800 to DDR3-1600.............................155
`12.1 Clock Specification ......................................................................................................155
`12.1.1 Definition for tCK(avg) ........................................................................................155
`12.1.2 Definition for tCK(abs).........................................................................................155
`12.1.3 Definition for tCH(avg) and tCL(avg)..................................................................155
`
`iii
`
`Micron Technology Inc. et al.
`Ex. 1020, p. viii
`
`

`

`JEDEC Standard No. 79-3C
`
`Contents
`
`12.1.4 Definition for tJIT(per) and tJIT(per,lck) .............................................................155
`12.1.5 Definition for tJIT(cc) and tJIT(cc,lck).................................................................156
`12.1.6 Definition for tERR(nper).....................................................................................156
`12.2 Refresh parameters by device density..........................................................................156
`12.3 Standard Speed Bins ....................................................................................................157
`12.3.1 Speed Bin Table Notes..........................................................................................161
`13 Electrical Characteristics and AC Timing ...........................................................................163
`13.1 Jitter Notes ...................................................................................................................170
`13.2 Timing Parameter Notes ..............................................................................................171
`13.3 Address / Command Setup, Hold and Derating ...........................................................173
`13.4 Data Setup, Hold and Slew Rate Derating ...................................................................180
`
`Annex A (informative) Differences between JESD79-3C, and JESD79-3B............................A1
`
`iv
`
`Micron Technology Inc. et al.
`Ex. 1020, p. ix
`
`

`

`JEDEC Standard No. 79-3C
`
`List of Figures
`Figure 1 —Qual-stacked / Quad-die DDR3 SDRAM x4 rank association . . . . . . . . . . . . . . . . . 12
`Figure 2 —Qual-stacked / Quad-die DDR3 SDRAM x8 rank association . . . . . . . . . . . . . . . . . 12
`Figure 3 —Qual-stacked / Quad-die DDR3 SDRAM x16 rank association . . . . . . . . . . . . . . . . 12
`Figure 4 —Simplified State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
`Figure 5 —Reset and Initialization Sequence at Power-on Ramping . . . . . . . . . . . . . . . . . . . . . 20
`Figure 6 —Reset Procedure at Power Stable Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
`Figure 7 —tMRD Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
`Figure 8 —tMOD Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
`Figure 9 —MR0 Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
`Figure 10 —MR1 Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
`Figure 11 —MR2 Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
`Figure 12 —MR3 Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
`Figure 13 —DLL-off mode READ Timing Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
`Figure 14 — DLL Switch Sequence from DLL-on to DLL-off . . . . . . . . . . . . . . . . . . . . . . . . . 38
`Figure 15 —DLL Switch Sequence from DLL Off to DLL On . . . . . . . . . . . . . . . . . . . . . . . . . 39
`Figure 16 —Change Frequency during Precharge Power-down . . . . . . . . . . . . . . . . . . . . . . . . . 41
`Figure 17 —Write Leveling Concept . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
`Figure 18 —Timing details of Write leveling sequence [DQS - DQS# is capturing CK - CK# low
`at T1 and CK - CK# high at T2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
`Figure 19 —Timing details of Write leveling exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
`Figure 20 —MPR Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
`Figure 21 —MPR Readout of predefined pattern, BL8 fixed burst order, single readout . . . . . . 51
`Figure 22 —MPR Readout of predefined pattern, BL8 fixed burst order, back-to-back readout 52
`Figure 23 —MPR Readout predefined pattern, BC4, lower nibble then upper nibble . . . . . . . . 53
`Figure 24 —MPR Readout of predefined pattern, BC4, upper nibble then lower nibble . . . . . . 54
`Figure 25 —READ Burst Operation RL = 5 (AL = 0, CL = 5, BL8) . . . . . . . . . . . . . . . . . . . . . 56
`Figure 26 —READ Burst Operation RL = 9 (AL = 4, CL = 5, BL8) . . . . . . . . . . . . . . . . . . . . . 56
`Figure 27 —READ Timing Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
`Figure 28 —Clock to Data Strobe Relationship . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
`Figure 29 —Data Strobe to Data Relationship . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
`Figure 30 —tLZ and tHZ method for calculating transitions and endpoints . . . . . . . . . . . . . . . . 60
`Figure 31 —Method for calculating tRPRE transitions and endpoints . . . . . . . . . . . . . . . . . . . . 61
`Figure 32 —Method for calculating tRPST transitions and endpoints . . . . . . . . . . . . . . . . . . . . 61
`Figure 33 —READ (BL8) to READ (BL8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
`Figure 34 —READ (BC4) to READ (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
`Figure 35 —READ (BL8) to WRITE (BL8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
`Figure 36 —READ (BC4) to WRITE (BC4) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
`Figure 37 —READ (BL8) to READ (BC4) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
`Figure 38 —READ (BC4) to READ (BL8) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
`Figure 39 —READ (BC4) to WRITE (BL8) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
`Figure 40 —READ (BL8) to WRITE (BC4) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
`Figure 41 —READ to PRECHARGE, RL = 5, AL = 0, CL = 5, tRTP = 4, tRP = 5 . . . . . . . . . 66
`Figure 42 —READ to PRECHARGE, RL = 8, AL = CL-2, CL = 5, tRTP = 6, tRP = 5 . . . . . . 67
`Figure 43 —Write Timing Definition and Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
`Figure 44 —Method for calculating tWPRE transitions and endpoints . . . . . . . . . . . . . . . . . . . 70
`Figure 45 —Method for calculating tWPST transitions and endpoints . . . . . . . . . . . . . . . . . . . . 70
`Figure 46 —WRITE Burst Operation WL = 5 (AL = 0, CWL = 5, BL8) . . . . . . . . . . . . . . . . . . 71
`Figure 47 —WRITE Burst Operation WL = 9 (AL = CL-1, CWL = 5, BL8) . . . . . . . . . . . . . . 71
`
`v
`
`Micron Technology Inc. et al.
`Ex. 1020, p. x
`
`

`

`JEDEC Standard No. 79-3C
`
`List of Figures
`
`Figure 48 —WRITE (BC4) to READ (BC4) Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
`Figure 49 —WRITE (BC4) to PRECHARGE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
`Figure 50 —WRITE (BC4) OTF to PRECHARGE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . 72
`Figure 51 —WRITE (BL8) to WRITE (BL8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
`Figure 52 —WRITE (BC4) to WRITE (BC4) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
`Figure 53 —WRITE (BL8) to READ (BC4/BL8) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
`Figure 54 —WRITE (BC4) to READ (BC4/BL8) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
`Figure 55 —WRITE (BC4) to READ (BC4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
`Figure 56 —WRITE (BL8) to WRITE (BC4) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
`Figure 57 —WRITE (BC4) to WRITE (BL8) OTF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
`Figure 58 —Refresh Command Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
`Figure 59 —Postponing Refresh Commands (Example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
`Figure 60 —Pulling-in Refresh Commands (Example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
`Figure 61 —Self-Refresh Entry/Exit Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
`Figure 62 —Active Power-Down Entry and Exit Timing Diagram . . . . . . . . . . . . . . . . . . . . . . 82
`Figure 63 —Power-Down Entry after Read and Read with Auto Precharge . . . . . . . . . . . . . . . 82
`Figure 64 —Power-Down Entry after Write with Auto Precharge . . . . . . . . . . . . . . . . . . . . . . . 83
`Figure 65 —Power-Down Entry after Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
`Figure 66 —Precharge Power-Down (Fast Exit Mode) Entry and Exit . . . . . . . . . . . . . . . . . . . 84
`Figure 67 — Precharge Power-Down (Slow Exit Mode) Entry and Exit . . . . . . . . . . . . . . . . . . 84
`Figure 68 — Refresh Command to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
`Figure 69 — Active Command to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
`Figure 70 — Precharge / Precharge all Command to Power-Down Entry . . . . . . . . . . . . . . . . . 86
`Figure 71 — MRS Command to Power-Down Entry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
`Figure 72 —Power-Down Entry/Exit Clarifications - Case 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
`Figure 73 —Power-Down Entry/Exit Clarifications - Case 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
`Figure 74 —Power-Down Entry/Exit Clarifications - Case 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
`Figure 75 —ZQ Calibration Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
`Figure 76 —Functional Representation of ODT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
`Figure 77 —Synchronous ODT Timing Example for AL = 3; CWL = 5; ODTLon = AL + CWL -
`2 = 6.0; ODTLoff = AL + CWL - 2 = 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
`Figure 78 —Synchronous ODT example with BL = 4, WL = 7. . . . . . . . . . . . . . . . . . . . . . . . . . 94
`Figure 79 —ODT must be disabled externally during Reads by driving ODT low. (example:
`CL = 6; AL = CL - 1 = 5; RL = AL + CL = 11; CWL = 5; ODTLon = CWL + AL -
`2 = 8; ODTLoff = CWL + AL - 2 = 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
`Figure 80 —Dynamic ODT: Behavior with ODT being asserted before and after the write . . . 98
`Figure 81 —Dynamic ODT: Behavior without write command, AL = 0, CWL = 5 . . . . . . . . . . 98
`Figure 82 —Dynamic ODT: Behavior with ODT pin being asserted together with write command
`for a duration of 6 clock cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
`Figure 83 —Dynamic ODT: Behavior with ODT pin being asserted together with write command
`for a duration of 6 clock cycles, example for BC4 (via MRS or OTF), AL = 0,
`CWL = 5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
`Figure 84 —Dynamic ODT: Behavior with ODT pin being asserted together with write command
`for a duration of 4 clock cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
`Figure 85 —Asynchronous ODT Timings on DDR3 SDRAM with fast ODT transition:
`AL is ignored . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
`Figure 86 —Synchronous to asynchronous transition during Precharge Power Down (with DLL
`frozen) entry (AL = 0; CWL = 5; tANPD = WL - 1 = 4) . . . . . . . . . . . . . . . . . . . . 104
`
`vi
`
`Micron Technology Inc. et al.
`Ex. 1020, p. xi
`
`

`

`JEDEC Standard No. 79-3C
`
`List of Figures
`Figure 87 —Synchronous to asynchronous transition after Refresh command (AL = 0; CWL = 5;
`tANPD = WL - 1 = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
`Figure 88 —Asynchronous to synchronous transition during Precharge Power Down (with DLL
`frozen) exit (CL = 6; AL = CL - 1; CWL = 5; tANPD = WL - 1 = 9) . . . . . . . . . . 106
`Figure 89 —Transition period for short CKE cycles, entry and exit period overlapping
`(AL = 0, WL = 5, tANPD = WL - 1 = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
`Figure 90 —Illustration of VRef(DC) tolerance and VRef ac-noise limits . . . . . . . . . . . . . . . . 114
`Figure 91 —Definition of differential ac-swing and “time above ac-level” tDVAC . . . . . . . . 115
`Figure 92 —Single-ended requirement for differential signals. . . . . . . . . . . . . . . . . . . . . . . . . 117
`Figure 93 —Vix Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
`Figure 94 —Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# . . . . . . . . 119
`Figure 95 —Single Ended Output Slew Rate Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
`Figure 96 —Differential Output Slew Rate Definition . . . . . . . . . . . . . . . . . . . . .

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