Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 1 of 50
`
`IN THE UNITED STATES DISTRICT COURT
`FOR THE WESTERN DISTRICT OF TEXAS
`AUSTIN DIVISION
`
`
`
`GREENTHREAD, LLC
`
`Plaintiff,
`
`vs.
`
`CIRRUS LOGIC, INC.
`
`Defendant.
`
`
`
`
`
`Civil Action No. 1:23-cv-00369-DC
`
`
`
`JURY TRIAL DEMANDED
`
`
`
`
`
`
`
`GREENTHREAD’S RESPONSIVE CLAIM CONSTRUCTION BRIEF
`
`
`
`Greenthread Ex. 2081, p. 1 of 50
`Semiconductor v. Greenthread
`
`

`

`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 2 of 50
`
`TABLE OF CONTENTS
`
`(cid:3)
`
`(cid:3)
`
`TABLE OF EXHIBITS ...................................................................................................................v(cid:3)
`EXEMPLARY CLAIMS 195:1 & 5 ............................................................................................. vii(cid:3)
`EXEMPLARY CLAIM 502:8 ..................................................................................................... viii(cid:3)
`EXEMPLARY CLAIMS 842:1 & 9 .............................................................................................. ix(cid:3)
`DISPUTED CLAIM CONSTRUCTIONS ......................................................................................x(cid:3)
`INTRODUCTION ...............................................................................................................1(cid:3)
`(cid:3)
`BACKGROUND .................................................................................................................2(cid:3)
`A.(cid:3)
`Dopants ....................................................................................................................2(cid:3)
`B.(cid:3)
`Overview of Dr. Rao’s Invention .............................................................................2(cid:3)
`C.(cid:3)
`Exemplary Claims 195:1 & 5 ..................................................................................5(cid:3)
`D.(cid:3)
`Exemplary Claim 502:8 ...........................................................................................7(cid:3)
`E.(cid:3)
`Exemplary Claims 842:1 & 9 ..................................................................................7(cid:3)
`DISPUTED CLAIM TERMS ..............................................................................................8(cid:3)
`A.(cid:3)
`Claim Terms Found in Exemplary Claims 195:1 & 5 .............................................9(cid:3)
`“surface layer” (195:1; 502:7; 222:44) ........................................................9(cid:3)
`“substrate” (195:1; 502:7; 842:1-2, 4, 9-10, 12, 17;
`481:1-3, 8, 15, 20, 22-23, 32; 222:1-3, 8, 15, 21, 23-
`24, 33, 39-42, 44; 014:1-3, 8, 15, 21, 23-24) .............................................14(cid:3)
`“active region” (195:1; 502:7-8; 842:1, 5-7, 9, 13-15,
`17-18; 481:1, 4–6, 8-9, 13, 20, 24–27; 222:1, 4–6, 8-
`9, 13, 20-21, 25-28, 35, 39-42, 44; 014:1, 4–6, 8-9,
`13, 20-21, 25-28)........................................................................................16(cid:3)
`“graded concentration of dopants” and “graded”
`terms(195:1, 5, 6; 502:7; 842:1, 6, 8, 9, 14, 16; 481:1,
`5, 7, 9, 20, 25, 27, 31; 222:1, 5, 7, 9, 21, 26, 28, 32,
`39–42, 44) ..................................................................................................18(cid:3)
`“unidirectional electric drift field” terms (195:1;
`502:7; 222:44) ............................................................................................22(cid:3)
`“to aid the movement” terms (195:1; 502:7; 842:1, 9;
`481:1, 20; 222:1, 21, 39, 41-42, 44; 014:1, 21) .........................................25(cid:3)
`
`1.(cid:3)
`2.(cid:3)
`3.(cid:3)
`4.(cid:3)
`5.(cid:3)
`6.(cid:3)
`
`i
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`Greenthread Ex. 2081, p. 2 of 50
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`

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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 3 of 50
`
`7.(cid:3)
`8.(cid:3)
`9.(cid:3)
`10.(cid:3)
`11.(cid:3)
`12.(cid:3)
`
`B.(cid:3)
`
`C.(cid:3)
`
`“well region” (195:1; 502:7; 842:1, 9; 481:1, 20;
`222:1, 21, 39, 41, 42, 44; 014:1, 21) ..........................................................26(cid:3)
`“said graded concentration”/“the graded dopant”
`(195:5-6; 481:7, 31; 222:7, 32; 014:7) .......................................................27(cid:3)
`Claim Term Found in Claim 502:8 ........................................................................28(cid:3)
`“respective active regions” (502:8) ............................................................28(cid:3)
`Claim Terms Found in Exemplary Claims 842:1 & 9 ...........................................29(cid:3)
`“active region…within which transistors can be
`formed” (842:1, 9; 481:1, 20; 222:1, 21, 39, 41-42;
`014:1, 21) ...................................................................................................29(cid:3)
`“the surface thereof”/“the surface” (842:9; 481:20;
`222:21; 014:21) ..........................................................................................33(cid:3)
`“aid carrier movement from the surface to the
`substrate” (842:9; 481:20)..........................................................................34(cid:3)
`CONCLUSION ..................................................................................................................35(cid:3)
`
`
`(cid:3)
`
`
`
`ii
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`Greenthread Ex. 2081, p. 3 of 50
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 4 of 50
`
`
`CASES
`
`TABLE OF AUTHORITIES
`
`Page(s)
`
`Acumed LLC v. Stryker Corp.,
`483 F.3d 800 (Fed. Cir. 2007)..................................................................................................16
`
`Adams Respiratory Therapeutics, Inc. v. Perrigo Co.,
`616 F.3d 1283 (Fed. Cir. 2010)................................................................................................11
`
`BASF Corp. v. Johnson Matthey Inc.,
`875 F.3d 1360 (Fed. Cir. 2017)................................................................................................16
`
`Baxalta Inc. v. Genentech, Inc.,
`972 F.3d 1341 (Fed. Cir. 2020)................................................................................................25
`
`Bose Corp. v. JBL, Inc.,
`274 F.3d 1354 (Fed. Cir. 2001)................................................................................................34
`
`Cordis Corp. v. Boston Sci. Corp.,
`561 F. 3d 1319 (Fed. Cir. 2009)...............................................................................................22
`
`Enzo Biochem, Inc. v. Applera Corp.,
`599 F.3d 1325 (Fed. Cir. 2010)................................................................................................22
`
`Gen. Atomics v. Axis-Shield,
`No. C 05-04074 SI, 2006 WL 2792428 (N.D. Cal. Sept. 27, 2006) ........................................28
`
`Nautilus, Inc. v. Biosig Instruments,
`572 U.S. 898 (2014) .....................................................................................................19, 28, 33
`
`NTP, Inc. v. Research in Motion, Ltd.,
`418 F.3d 1282 (Fed. Cir. 2005)................................................................................................16
`
`O2 Micro Int’l Ltd. v. Beyond Innovation Tech. Co.,
`521 F.3d 1351 (Fed. Cir. 2008)................................................................................................27
`
`Renishaw PLC v. Marposs S.p.A.,
`158 F.3d 1243 (Fed. Cir. 1998)................................................................................................14
`
`Summit 6 LLC v. HTC Corp.,
`No. 7:14-CV-00014-O, 2015 WL 11117868 (N.D. Tex. Mar. 21, 2015)................................28
`
`SynQor, Inc. v. Artesyn Techs., Inc.,
`709 F.3d 1365 (Fed. Cir. 2013)................................................................................................11
`
`W. Union Co. v. MoneyGram Int'l, Inc.,
`2008 U.S. Dist. LEXIS 108129 (W.D. Tex. Nov. 6, 2008) .....................................................27
`
`iii
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`Greenthread Ex. 2081, p. 4 of 50
`Semiconductor v. Greenthread
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`

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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 5 of 50
`
`OTHER AUTHORITIES
`
`MPEP § 2173.05(e) ........................................................................................................................34
`
`
`
`
`
`iv
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`Greenthread Ex. 2081, p. 5 of 50
`Semiconductor v. Greenthread
`
`

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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 6 of 50
`
`Exhibit
`1
`2
`
`3
`
`4
`
`5
`
`6
`
`7
`
`8
`
`9
`
`10
`
`11
`
`12
`
`TABLE OF EXHIBITS1
`
`Description
`Declaration of Dr. Alexander Glew (“Glew declaration”)
`U.S. Patent No. 8,421,195 to G.R. Mohan Rao (GT-WDTX-CL_0000001-14)
`(“195 patent”)
`U.S. Patent No. 9,190,502 to G.R. Mohan Rao (GT-WDTX-CL_0000015-28)
`(“502 patent”)
`U.S. Patent No. 10,510,842 to G.R. Mohan Rao (GT-WDTX-CL_0000029-43)
`(“842 patent”)
`Excerpts from Chen, J. Y., CMOS Devices and Technology for VLSI, Prentice-Hall
`(1990) (GT-WDTX-CL_0088908-88954) (“Chen”)
`Greenthread, LLC v. Samsung Elecs. Co., Ltd., No. 2:19-cv-00147-JRG, Dkt. 67
`(Claim Construction Memorandum Opinion and Order), E.D. Tex. Apr. 20, 2020
`(GT-WDTX-CL_0065233-65264) (“EDTX Markman Order”)
`Greenthread, LLC v. Intel Corp., No. 6:22-cv-00105-ADA (email from Dr. Yi dated
`Dec. 21, 2022 in WDTX Greenthread case), D. Or. Feb. 8, 2023 (GT-WDTX-
`CL_0065441-65445) (“WDTX Preliminary Constructions”)
`Greenthread, LLC v. Intel Corp., No. 3:22-cv-02001-JR, Dkt. 44, D. Or. Mar. 16,
`2023 (GT-WDTX-CL_0065365-65373) (“D. Or. Findings and Recommendation”)
`Samsung Elecs. Co., Ltd. v. Greenthread, LLC, IPR2020-00289, Ex. 1003 (Apr. 14,
`2020) ) (GT-WDTX-CL_0050327-50417) (“Smith declaration”)
`The American Heritage Dictionary of the English Language, Third Edition (2002), at
`1792 (defining “substrate”) (GT-WDTX-CL_0020230-20234)
`Excerpts from Webster’s Third New International Dictionary of the English
`Language Unabridged, Merriam-Webster, Inc. (2002) (GT-WDTX-CL_0020235-
`20245; GT-WDTX-CL_0065298-65314)
`Excerpts from Baker, R. J., CMOS Circuit Design, Layout, and Simulation, IEEE
`(1998) (GT-WDTX-CL_0065146-65187) (“Baker”)
`
`
`1 When possible, Greenthread has cited to the exhibits previously attached to Cirrus’ Opening
`Claim Construction Brief (Dkt. 35). Unless otherwise indicated, all docket numbers refer to the
`present case, Greenthread, LLC v. Cirrus Logic Inc., No. 1:23-cv-369-DC-DTG (W.D. Tex.), and
`all citations to page numbers of CM/ECF documents refer to the page number at the top of the
`page in the CM/ECF header.
`Because many of the terms were previously at issue before this Court in Greenthread, LLC v. Intel
`Corp., No. 6:22-cv-00105-ADA (W.D. Tex.), Greenthread includes some citations to the docket
`from that case, with the indication “Intel Dkt.”
`
`v
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 7 of 50
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`13
`
`14
`
`15
`
`16
`
`17
`
`18
`
`19
`
`20
`
`21
`
`22
`
`23
`
`24
`
`25
`26
`
`27
`
`28
`
`29
`
`
`
`File History of U.S. Patent No. 10,510,842 (GT-WDTX-CL_0000651-849) (“842 file
`history”)
`Excerpts from Howe, R. T., Microelectronics: An Integrated Approach, Prentice-Hall
`(1997) ) (GT-WDTX-CL_0065265-65285) (“Howe”)
`Excerpts from Wolf S., Silicon Processing for the VLSI Era Volume 2: Process
`Integration, Lattice Press (1990) (GT-WDTX-CL_0020508-20521)
`Excerpts from Wolf S., Silicon Processing for the VLSI Era Volume 3: The
`Submicron MOSFET, Lattice Press (1995) (GT-WDTX-CL_0065358-65364)
`Excerpts from Webster’s Third New International Dictionary of the English
`Language Unabridged, Merriam-Webster, Inc. (2002) (GT-WDTX-CL_0088611-
`88614)
`Intel Corp. v. Greenthread, LLC, IPR2023-00548, Paper 1 (Intel 195 Petition) (Jan.
`30, 2023) (GT-WDTX-CL_0042466-42570)
`Intel Corp. v. Greenthread, LLC, IPR2023-00548, Ex. 1003 (Blalock Declaration)
`(Jan. 30, 2023) (GT-WDTX-CL_0043021-43137)
`Cirrus Logic, Inc. et al. v. Greenthread, LLC, IPR2024-00017, Paper 1 (Cirrus 195
`Petition) (Oct. 18, 2023) (GT-WDTX-CL_0088793-88907)
`Cirrus Logic, Inc. et al. v. Greenthread, LLC, IPR2024-00017, Ex. 1003 (Banerjee
`Declaration) (Oct. 18, 2023) (GT-WDTX-CL_0088615-88760)
`U.S. Patent Publication No. 2020/0006551 (“Warrick”) (GT-WDTX-CL_0088781-
`88792)
`U.S. Patent Publication No. 2003/0042511 (“Rhodes”) (GT-WDTX-CL_0018646-
`18667)
`U.S. Patent Publication No. 2002/0093281 (“Cathey”) (GT-WDTX-CL_0088774-
`88780)
`U.S. Patent No. 6,831,292 (“Currie”) (GT-WDTX-CL_0088761-88773)
`Dell Techs. Inc., et al. v. Greenthread LLC, IPR2023-00506, Paper 1 (Dell 842
`Petition) (GT-WDTX-CL_0002147-2235)
`Dell Techs. Inc., et al. v. Greenthread LLC, IPR2023-00506, Ex. 1003 (Blalock
`Declaration) (GT-WDTX-CL_0002497-2599)
`Sony Group Corp. v. Greenthread, LLC, IPR2023-00376, Paper 1 (Sony 842
`Petition) (GT-WDTX-CL_0063539-63619)
`Sony Group Corp. v. Greenthread, LLC, IPR2023-00376, 1002 (Guidash
`Declaration) (GT-WDTX-CL_0063681-63796)
`
`
`vi
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 8 of 50
`
`EXEMPLARY CLAIMS 195:1 & 5
`
`Term
`
`U.S. Patent No. 8,421,195, Claim 1 (195:1)
`
`A CMOS Semiconductor device comprising:
`a surface layer;
`
`a substrate;
`
`an active region including a source and a drain, disposed on one surface of said
`surface layer;
`
`a single drift layer disposed between the other surface of said surface layer and
`said substrate, said drift layer having a graded concentration of dopants
`extending between said surface layer and said substrate, said drift layer
`further having a first static unidirectional electric drift field
`to aid the movement of minority carriers from said surface layer to said
`substrate; and
`
`at least one well region disposed in said single drift layer, said well region
`having a graded concentration of dopants and a second static unidirectional
`electric drift field to aid the movement of minority carriers from said surface
`layer to said substrate.
`
`
`
`U.S. Patent No. 8,421,195, Claim 5 (195:5)
`
`The CMOS Semiconductor device of claim 1, wherein said graded concentration
`follows a quasi-linear gradient.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Term
`
`
`
`
`
`
`
`
`
`vii
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 9 of 50
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`EXEMPLARY CLAIM 502:8
`
`Term
`
`U.S. Patent No. 9,190,502, Claim 8 (502:8)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`7. A semiconductor device comprising:
`a surface layer;
`a substrate;
`an active region including a source and a drain, disposed on one surface of said
`surface layer;
`a single drift layer disposed between the other surface of said surface layer and
`said substrate, said drift layer having a graded concentration of dopants
`generating a first static unidirectional electric drift field to aid the movement
`of minority carriers from said surface layer to said substrate; and
`at least one well region disposed in said single drift layer, said well region
`having a graded concentration of dopants generating a second static
`unidirectional electric drift field to aid the movement of minority carriers
`from said surface layer to said substrate.
`8. The semiconductor device of claim 7 wherein said first and second static
`unidirectional electric fields are adapted to respective grading of dopants to aid
`movements of carriers in respective active regions.
`
`
`
`
`
`
`
`
`viii
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 10 of 50
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`EXEMPLARY CLAIMS 842:1 & 9
`
`Term
`
`U.S. Patent No. 10,510,842, Claim 1 (842:1)
`
`
`
`
`
`
`
`
`A semiconductor device, comprising:
`a substrate of a first doping type at a first doping level having first and second
`surfaces;
`a first active region disposed adjacent the first surface of the substrate with a
`second doping type opposite in conductivity to the first doping type and
`within which transistors can be formed;
`a second active region separate from the first active region disposed adjacent to
`the first active region and within which transistors can be formed;
`transistors formed in at least one of the first active region or second active
`region; and
`at least a portion of at least one of the first and second active regions having at
`least one graded dopant concentration to aid carrier movement from the first
`surface to the second surface of the substrate.
`
`Term
`
`U.S. Patent No. 10,510,842, Claim 9 (842:9)
`
`
`
`
`
`
`
`
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`
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`
`
`
`
`A semiconductor device, comprising:
`a substrate of a first doping type at a first doping level having first and second
`surfaces;
`a first active region disposed adjacent the first surface of the substrate with a
`second doping type opposite in conductivity to the first doping type and
`within which transistors can be formed in the surface thereof;
`a second active region separate from the first active region disposed adjacent to
`the first active region and within which transistors can be formed in the
`surface thereof;
`transistors formed in at least one of the first active region or second active
`region; and
`at least a portion of at least one of the first and second active regions having at
`least one graded dopant concentration to aid carrier movement from the
`surface to the substrate.
`
`
`
`
`
`
`
`ix
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 11 of 50
`
`DISPUTED CLAIM CONSTRUCTIONS
`
`Claim(s)
`
`Terms2
`
`“surface layer”
`
`195:1
`502:7
`222:44
`
`Previous
`Constructions3
`Not indefinite. Plain
`and ordinary
`meaning.
`
`“substrate”
`
`Plain and ordinary
`meaning
`
`Greenthread
`
`Cirrus
`
`Indefinite
`
`Indefinite
`
`Not indefinite. Plain
`and ordinary
`meaning, where the
`plain and ordinary
`meaning is “a layer
`at the surface”
`Not indefinite. Plain
`and ordinary
`meaning, where the
`plain and ordinary
`meaning is an
`“underlying layer”
`
`#
`
`1
`
`2
`
`3
`
`4
`
`195:1
`502:7
`842: 1-2, 4, 9-10,
`12, 17
`481: 1-3, 8, 15,
`20, 22-23, 32
`222:1-3, 8, 15,
`21, 23-24, 33,
`39-42, 44
`014: 1-3, 8, 15,
`21, 23-24
`195:1
`502:7, 8
`842: 1, 5–7, 9,
`13–15, 17, 18
`481: 1, 4–6, 8, 9,
`13, 20, 24–27
`222: 1, 4–6, 8, 9,
`13, 20, 21, 25–
`28, 35, 39, 40,
`41, 42, 44
`014: 1, 4–6, 8, 9,
`13, 20, 21, 25–28
`195:1, 5, 6
`502:7
`842:1, 6, 8-9,
`14, 16
`481:1, 5, 7, 9,
`20, 25, 27, 31
`222:1, 5, 7, 9,
`21, 26, 28, 32,
`39–42, 44
`
`
`
`
`“active region”
`
`Plain and ordinary
`meaning
`
`Plain and ordinary
`meaning
`
`“region that forms
`current path of a device”
`
`“graded concentration
`of dopants” and other
`“graded” terms
`
`Indefinite
`
`Related to #s 5 and 6 Not indefinite.
`Plain and ordinary
`meaning, where the
`plain and ordinary
`meaning is a
`graded (or varying)
`concentration of
`dopants.
`
`
`
`
`2 All 12 terms were identified by Defendant.
`3 Ex. 7 (WDTX Preliminary Constructions); Ex. 8 (D. Or. Findings and Recommendation) (“[T]he
`WDTX’s preliminary constructions and summary judgment ruling should govern this case.”).
`
`x
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 12 of 50
`
`DISPUTED CLAIM CONSTRUCTIONS (continued)
`
`#
`
`5
`
`6
`
`7
`
`Claim(s)
`
`Terms
`
`195:1
`502:7
`222:44
`
`“said [drift layer
`further/well region…]
`having a [first/second]
`static unidirectional
`electric drift field”
`
`Previous
`Constructions
`Plain and ordinary
`meaning
`
`Greenthread
`
`Cirrus
`
`Plain and ordinary
`meaning
`
`“said [drift layer
`further/well region...]
`having a [first/second]
`static electric drift field
`that is unidirectional
`over the extent of the
`[drift layer/well
`region]”
`“said [drift layer/well
`region] having a graded
`concentration of
`dopants generating a
`[first/second] static
`electric drift field that is
`unidirectional over the
`extent of the [drift
`layer/well region]”
`“to aid the movement of
`minority carriers starting
`from…and reaching…”
`“to aid the movement of
`carriers starting
`from…and reaching…”
`“to aid carrier movement
`starting from…and
`reaching…”
`“to aid carrier movement
`starting from…towards…”
`
`“to aid carrier thereof
`movement starting
`from…and reaching…”
`“A well, whether
`formed by single or
`multiple implants.
`Portions of a well are
`not well regions.”
`
`“said [drift layer
`further/well region]
`having a graded
`concentration of
`dopants generating a
`[first/second] static
`unidirectional electric
`drift field”
`
`“to aid the movement of
`minority carriers
`from…to…”
`“to aid the movement of
`carriers from…to…”
`
`“to aid carrier
`movement from…to …”
`
`“to aid carrier
`movement
`from…towards…”
`“to aid carrier thereof
`movement from…to…”
`
`“well region”
`
`
`
`195:1
`502:7
`842:1, 9
`481:1, 20
`222:1, 21, 39,
`41-42, 44
`014:1, 21
`
`195:1
`502:7
`842:1, 9
`481:1, 20
`222:1, 21, 39,
`41-42, 44
`014:1, 21
`
`
`
`Not indefinite. Plain
`and ordinary
`meaning.
`
`Plain and ordinary
`meaning
`
`Plain and ordinary
`meaning.
`Note not for jury:
`portions of a well are
`not well regions
`
`Plain and ordinary
`meaning.
`Note not for jury:
`portions of a well are
`not well regions
`
`xi
`
`Greenthread Ex. 2081, p. 12 of 50
`Semiconductor v. Greenthread
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 13 of 50
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`DISPUTED CLAIM CONSTRUCTIONS (continued)
`
`Claim(s)
`
`Terms
`
`#
`
`8
`
`9
`
`10
`
`11
`
`12
`
`195:5, 6
`481: 7, 31
`222: 7, 32
`014: 7
`502:8
`
`842:1, 9
`481:1, 20
`222:1, 21, 39,
`41-42
`014:1, 21
`842:9
`481:20
`222:21
`014:21
`842:9
`481:20
`
`
`
`
`
`Previous
`Constructions
`Related to #4
`
`Related to #3
`
`Not indefinite. Plain
`and ordinary
`meaning.
`
`Greenthread
`
`Cirrus
`
`Not indefinite. Plain
`and ordinary
`meaning.
`
`Indefinite
`
`Not indefinite. Plain
`and ordinary
`meaning.
`Not indefinite. Plain
`and ordinary
`meaning.
`
`Indefinite
`
`Indefinite
`
`“said graded
`concentration”
`“the graded dopant”
`
`“respective active
`regions”
`
`“active region…
`within which
`transistors can be
`formed”
`
`“the surface thereof”
`“the surface”
`
`Related to #10
`
`Not indefinite. Plain
`and ordinary
`meaning.
`
`Indefinite
`
`“aid carrier movement
`from the surface to the
`substrate”
`
`Related to #6
`
`Not indefinite. Plain
`and ordinary
`meaning.
`
`Indefinite
`
`
`
`xii
`
`Greenthread Ex. 2081, p. 13 of 50
`Semiconductor v. Greenthread
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 14 of 50
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`
`
`INTRODUCTION
`
`Greenthread’s complaint asserts six patents
`
`that
`
`improve
`
`the performance of
`
`semiconductor devices. All six patents claim priority to an application filed by Dr. Mohan Rao on
`
`September 3, 2004. Dr. Rao is one of the pioneers in the semiconductor industry. He is an award-
`
`winning inventor, and his inventions are featured in the Smithsonian museum. When he filed his
`
`application in 2004, he used terms that those skilled in the art would readily understand. He did
`
`not coin any new terms, and he did not disclaim the full scope of the plain meaning. Therefore, it
`
`is not surprising that plain meaning is the proper construction for all twelve disputed claim terms.
`
`Greenthread has briefed the twelve terms in accordance with Judge Counts’ Standing Order
`
`Governing Patent Proceedings in the order that the terms first appear in the asserted patents and
`
`claims. Cirrus Logic (“Cirrus”) used an order that does not follow Judge Counts’ rules.
`
`Terms 1-3, 5-7, and 10 were previously at issue in Greenthread v. Intel. In that litigation,
`
`this Court issued preliminary constructions (Ex. 7), siding with Greenthread on all seven terms.
`
`After Intel was transferred to the District of Oregon, Magistrate Judge Russo reviewed the claim
`
`construction briefing and issued a recommendation that the WDTX constructions should govern
`
`(Ex. 8, 8). Now Cirrus wants to rehash arguments that have been rejected not once, but twice.
`
`For term 4, Cirrus takes a “Hail Mary” approach that the “graded dopant” terms in all of
`
`the asserted claims are indefinite. It is telling that defendants in the Intel case (i.e., Intel, Dell, and
`
`Sony) never argued that these terms are indefinite. Instead each of them and their technical experts
`
`consistently took the position that these terms are readily understood. Even Cirrus filed IPRs
`
`demonstrating that Cirrus and its expert understood what these terms mean.
`
`For the remaining terms 8-9 and 11-12, Cirrus makes hyper-technical arguments that these
`
`terms are also indefinite. In doing so, Cirrus misapplies the law. The test is not whether the term
`
`alone would have been confusing, or whether the antecedent basis for a dependent claim is exactly
`
`1
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`Greenthread Ex. 2081, p. 14 of 50
`Semiconductor v. Greenthread
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 15 of 50
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`the same. Rather, the test is whether one of ordinary skill in the art reading the specification, file
`
`history, and surrounding claim language would have understood with reasonable certainty what
`
`was meant. When the law is properly applied, there is no question these terms are not indefinite.
`
`
`
`BACKGROUND
`A.
`
`Dopants
`
`Silicon is an example of a semiconductor. In its pure form it is typically an insulator but it
`
`can become an electrical conductor when impurities called “dopants” are added into the silicon
`
`crystal. These dopants are usually phosphorous or boron atoms that have one more or one less
`
`valence electron than a silicon atom. If the dopant has one less valence electron, then it creates
`
`what is called a “hole,” which is a positive unit of charge. The extra electrons or holes disturb the
`
`local charge equilibrium in the silicon and can become mobile in response to electric fields. Thus,
`
`the electrons and holes are called “charge carriers.” Ex. 1 (Glew declaration), ¶26; id., ¶¶1-25.
`
`These dopants can also change the net electrical charge distribution in the surrounding
`
`silicon, which can influence the motion of other charge carriers passing by. When the dopant
`
`concentration is graded in a particular direction, other charge carriers will move in the gradient
`
`direction (or opposite direction) depending on the charge carrier’s polarity. This phenomenon is
`
`called “carrier drift.” Id., ¶27.
`
`B.
`
`Overview of Dr. Rao’s Invention
`
`At the time of Dr. Rao’s invention, most semiconductor devices relied on uniform
`
`concentrations of dopants. Ex. 2 (195 patent), Abstract; 1:36-40, 50-51. Dr. Rao recognized,
`
`however, that graded concentrations of dopants can be used to improve the performance of
`
`transistors and other semiconductor devices. Id., Abstract; 3:3-13, 33-35. His invention is clearly
`
`disclosed in Figs. 5B-C of his patents, and the corresponding parts of the specification. Ex. 1, ¶28.
`
`A surface-channel MOSFET is a common type of transistor capable of controlling current
`
`2
`
`Greenthread Ex. 2081, p. 15 of 50
`Semiconductor v. Greenthread
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 16 of 50
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`flow at or along the surface of the semiconductor substrate. Ex. 5 (Chen), 27 (“carriers propagate
`
`at the semiconductor surface”). Figure 5B shows an n-channel MOS (NMOS)4 transistor that is
`
`formed in a p-type surface layer. The transistor comprises (1) a gate; (2) a thin oxide separating
`
`the gate from the surface layer; and (3) two doped regions called the source and drain (shaded red).
`
`Ex. 2, 3:10-11 (“electrons can be swept from source to drain”); 3:42-43 (“accelerate majority
`
`carriers towards the drain”). In Fig. 5B, the N+ means these regions are heavily doped with an n-
`
`type dopant that creates a surplus of negative carriers (i.e., electrons).5 The specification explains
`
`that the NMOS transistor in Fig. 5B can be a surface-channel MOSFET. Ex. 1, ¶¶29-32.
`
`
`Ex. 1, ¶32 (explaining Fig. 5B above); Ex. 2, 3:41-43. Meanwhile, the p-type silicon between the
`
`source and drain (shaded blue) has an abundance of positively charged holes (green circles). When
`
`the holes separate the source’s electrons from the drain’s electrons, current cannot flow through
`
`the transistor, and the transistor is in an “off” state. Ex. 1, ¶¶32-33.
`
`When a positive voltage is applied to the gate, an electric field forms in the oxide. Id. This
`
`electric field repels the holes downwards, while the electrons (red circles) are attracted to move
`
`into the blue surface layer. When enough electrons have accumulated in the surface layer below
`
`the oxide, they form a conductive channel between the source and the drain, and current can begin
`
`
`4 MOS stands for “metal oxide semiconductor.” Ex. 1, ¶32 n.4.
`5 An “N” region or layer has more electrons, and thus a “negative charge.” A “P” layer has more
`holes, and a “positive charge.” A “+” or “-” means heavily or lightly doped. Ex. 1, ¶32 n.5.
`
`3
`
`Greenthread Ex. 2081, p. 16 of 50
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 17 of 50
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`to flow through the transistor.
`
`
`Ex. 1. ¶33. 6 In order to turn the transistor “off,” the positive voltage is removed from the gate and
`
`the channel disappears as the holes return to the surface layer. Id.
`
`POSITAs normally use the term “well region” to describe the doped silicon that surrounds
`
`the source and drain. Id., ¶34. Dr. Rao recognized that by using graded concentrations of dopants
`
`in the well region and a drift layer (shaded pink), it is possible to “pull” carriers from the silicon’s
`
`surface. Ex. 2, Fig. 5B (annotated above). In this example, pulling the holes from the surface
`
`layer when a positive voltage is applied to the gate, allows the transistor to turn “on” more quickly.
`
`This improves the speed and performance of the transistor. Ex. 1, ¶35; Ex. 2, 3:8-13.
`
`As its name suggests, the channel in a surface channel MOSFET forms along the surface.
`
`But it is slightly more complicated than that. The figure below shows that the n-channel starts at
`
`the source (left) and expands towards the drain (right) as the voltage applied to the gate increases.
`
`There is a thin layer below the surface (shaded red) where the channel actually forms. Ex. 1, ¶36.
`
`
`Ex. 1, ¶36; Ex. 5, 19 (shaded). The cross-hatched region underneath is known as the depletion
`
`
`6 Because the channel is formed by electrons with a negative charge, the MOSFET is referred to
`as an n-channel MOSFET, and the “minority carriers” are holes. Ex. 1, ¶33 n.6.
`
`4
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`Greenthread Ex. 2081, p. 17 of 50
`Semiconductor v. Greenthread
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`Case 1:23-cv-00369-DC-DTG Document 37 Filed 12/14/23 Page 18 of 50
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`region. As shown above, the n-channel does not actually form on the surface but rather in the layer
`
`just below the surface (i.e., the surface layer). Ex. 1, ¶36.
`
`C.
`
`Exemplary Claims 195:1 & 5
`
`Seven of the twelve disputed claim terms can be found in exemplary claim 195:1. These
`
`seven claim terms are numbered and color coded below.
`
`Term
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`U.S. Patent No. 8,421,195, Claim 1 (195:1)
`A CMOS Semiconductor device comprising:
`a surface layer;
`a substrate;
`
`an active region including a source and a drain, disposed on one surface of said surface layer;
`
`a single drift layer disposed between the other surface of said surface layer and said substrate,
`said drift layer having a graded concentration of dopants extending between said surface
`layer and said substrate, said drift layer further having a first static unidirectional electric
`drift field
`to aid the movement of minority carriers from said surface layer to said substrate; and
`
`at least one well region disposed in said single drift layer, said well region having a graded
`concentration of dopants and a second static unidirectional electric drift field to aid the
`movement of minority carriers from said surface layer to said substrate.
`
`Far from being indefinite, claim 195:1 lines up exactly with Fig. 5B and the corresponding parts
`
`of the specification. Ex. 1, ¶¶37-38. Fig. 5B confirms exactly what is meant by each claim term.
`
`As the preamble states, Fig. 5B illustrates a CMOS device with metal and oxide layers on a silicon
`
`substrate. Ex. 2, 2:27-31; 3:41-43. The specification specifically mentions that the device may be
`
`a surface channel MOSFET. Id., 3:41-43; see also 1:43-45.
`
`As seen below, the CMOS device comprises a surface layer (blue) and a substrate (gray).
`
`Id., 3:30-45. The substrate is lightly doped with holes (P-), and the surface layer is a layer at the
`
`surface of the silicon. As explained below, the invention is concerned with moving minority
`
`