Sanjay Banerjee, PhD CV
`Sanjay Banerjee is the Cockrell Family Regents Chair Professor of Electrical and
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`Computer Engineering and Director, Microelectronics Research Center, at the
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`University of Texas at Austin. He received his B.Tech from the Indian Institute of
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`Technology, Kharagpur, and his M.S. and Ph.D. from the University of Illinois at
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`Urbana-Champaign in 1979, 1981 and 1983 respectively, all in electrical
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`engineering. As a Member of the Technical Staff, Corporate Research, Development
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`and Engineering of Texas Instruments Incorporated from 1983-1987, he worked on
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`polysilicon transistors and dynamic random access trench memory cells used by
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`Texas Instruments in the world's first 4Megabit DRAM. He has been Assistant
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`Professor (1987-90), Associate Professor (1990-93), and Professor (1993-) at The
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`University of Texas at Austin. He has over 1000 archival refereed publications/talks,
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`10 books/chapters, and 35 U.S. patents, and has supervised over 80 Ph.D. and 70
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`MS students. His students have received 15 Best Papers Awards at various
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`conferences, and he has presented over 150 invited talks. He received the
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`Engineering Foundation Advisory Council Halliburton Award, 1991, the Texas
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`Atomic Energy Fellowship (1990-1997), Cullen Professorship (1997-2001) and the
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`Hocott Research Award from UT Austin (2007). He has won the SIA/SRC
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`University Researcher Award (2017), IEEE Grove Award (2014), Distinguished
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`Alumnus Award, IIT (2005), Industrial R&D 100 Award (2004), ECS Callinan
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`Award (2003), IEEE Millennium Medal (2000), NSF Presidential Young
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`Investigator Award (1988), and several Best Paper Awards and SRC Inventor
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`Recognition Awards. He was a Distinguished Lecturer for IEEE Electron Devices
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`Society, and the General Chair of the IEEE Device Research Conference, 2002. He
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`is a Fellow of IEEE, APS, AAAS and NAI. He is active in the areas of beyond-
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`CMOS nanoelectronic transistors based on 2D materials and spintronics, fabrication
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`and modeling of advanced MOSFETs, and solar cells.
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`Sanjay Kumar Banerjee
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`Current Position: Cockrell Family Regents Chair in
` Electrical and Computer Engineering, 1999-
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` Director, Microelectronics Research Center, 1999-
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`Previous Positions: Cullen Trust Endowed Professorship in Engineering, 1997-2001
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`University of Texas, Assoc. Director, Microelectronics Research Center, 1996-99
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`University of Texas, Professor, September 1993-
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`University of Texas, Associate Professor, September 1990- August 1993
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`University of Texas, Assistant Professor, September 1987- August, 1990
`Texas Instruments, Corporate R& D, Member of Technical Staff, 1983-Aug. 1987
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`Education: University of Illinois, PhD (Electrical Engineering), 1983
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`University of Illinois, MS (Electrical Engineering), 1981
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`Indian Institute of Technology at Kharagpur, India, B. Tech (Electronics), 1979
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`Professional Engineer: Texas
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`Honors and Awards:
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`Fellow, National Academy of Inventors (2021)
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`SIA/SRC University Research Award (2017)
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`IEEE Andrew Grove Award (2014)
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`Fellow of American Association for Advancement of Science (2007)
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`Hocott Research Award, Univ. of Texas, 2007
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`Fellow, American Physical Society, 2006
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`Distinguished Alumnus Award, IIT, 2005
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`Industrial R&D 100 Award (with R.Singh) 2004
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`Electrochemical Society Thomas D. Callinan Award, 2003
`IEEE Millennium Medal, 2001
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`SRC Inventor Recognition Awards, 1994, 2000, 2009
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`Best Paper Awards (15) @ ISSCC, SRC TECHCON, DARPA, DRC
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`Who’s Who Listings (Marquis)
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`Cullen Professorship, Univ. of Texas, 1997- 2001
`Distinguished Lecturer, IEEE Electron Devices Society (1997-2003), Adcom
`Member till 1998
`Fellow of IEEE, 1996
`Engineering Foundation Advisory Council Halliburton Award, 1991
`Texas Atomic Energy Centennial Fellowship, 1990-97
`NSF Presidential Young Investigator Award, 1988
`Jagadis Bose and National Science Talent Search Scholarships, India, 1974-79
`Institute Medal; &Swapan Saha Prize for Highest Ranking UG (ECE), I.I.T., 1979
`Phi Kappa Phi
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`Professional Society and Major Government Committees:
`Technical Advisory Board: Applied Novel Devices (current) AstroWatt, DSM Semiconductors,
`Cambrios, Nanocoolers Inc., BeSang Memories, Organic ID and ITU Ventures;Gerson Lehmann
`Group, NY; Austin Community College; Asia Pacific IIIT; Rochester Institute of Technology,
`HSMC Foundry
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`IEEE Dan Noble Award Committee, 2010-13 (Chair, 2012-13)
`Congressional round-table panel member on nanotechnology, Feb. 2008
`Member on International Technology Roadmap for Semiconductors
`Siemens Westinghouse Science Talent Contest Judge, 2003
`Morgan & Claypool Publishers, Lectures in Electronic Materials &Devices, Series Editor
`SISPAD, Program Committee, 2005-6
`Electrochemical Society Symposium on SiGe, Program Committee, 2004
`IRPS, Program Committee, 2005
`12th Int. Workshop on Physics of Semiconductor Devices, Int. Advisory Committee
`Int. Advisory Committee, Int. Conf. on MEMS and Nanotechnology, IIT, 2005
`Program Committee, International SiGe Technology and Device Meeting, 2004-2012
`IEEE Device Research Conference Technical Program Chair, 2000-01, General Chair, 2001-02
`Editorial Board, Elsevier Science, 2001
`IEDM Program Committee, Modeling and Simulation, Session Chair, 2001-03
`ECS Session Chair, Toronto, Canada, May 2000
`Program Committee, IEEE Int. Conf. Communications, Computers, Devices, Kharagpur, 2000.
`IEEE Device Research Conference Program Committee/Local Arrangements Chair, 1999-2000
`NSF Workshop Co-Organizer for “Front and Back-end Processes”, Austin, TX 1999
`Eleventh Int. Ion Implant Tech. Meet. Program Committee and Publications Chair, 1995-1996.
`IEEE Symposium on VLSI Technology, Committee Member, 1992-98
`NSF Workshop Organizer for “Silicon-Germanium Devices”, Austin, TX 1999
`IEEE University Government Industry Microelectronics Symp., General Chairman, 1994-1995
`IEEE International Electron Devices Meeting, (Device Technology/ Session Chair: 1989-90)
`IEEE Conf. on Electromagnetic Field Computation, Chair Comp. in Electron Dev., CA, 1992
`Panel Member, SRC Conference on Integration of Novel Processes, 1991
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`Sponsored Research:
`Grant title: "Three-Dimensional IC Technology,"
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`Co-Principal Investigator:S.Banerjee
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`Other Investigators: D.L. Kwong
`Sponsoring Agency: Texas Advanced Technology Program
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`Duration: June 1988-August 1990.
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`Grant title: "High Speed Devices and VLSI Structures by Laser-Enhanced Epitaxy,"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: Texas Advanced Technology Program
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`Duration: June 1988-August 1990.
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`Grant title: "Optoelectronic Devices by Photo-enhanced Chemical Vapor Deposition,"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: National Science Foundation PYI
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`Duration: August 1988- July 1993.
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`Grant title: "GaAs-on-Si MESFET Modeling,"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: Texas Instruments, Inc.
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`Duration: December 1988- August 1989.
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`Grant title: "Understanding and Modeling of Unit Processes"
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`Co-Investigator: S.Banerjee
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`Other Investigators: W.Adcock (PI), A.Tasch (Co-PI), I.Trachtenberg (Co-PI),
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`D.Kwong, J.Lee, T.Edgar and J.Ekerdt
`Sponsoring Agency: SEMATECH and SRC
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`
`Duration: December 1988- August 1993.
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`Grant title: "RPCVD Epitaxial Silicon and Insulators for Use in 3-D CMOS Integrated
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`Circuits,"
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`Co-Investigator: S.Banerjee
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`Other Investigators: A.Tasch (P.I.), A.Cowley and R.Jones
`Sponsoring Agency: Office of Naval Research
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`Duration: Sept. 1987- March 1990.
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`Grant title: "Ballistic and Quantum Transport in Si Devices at Cryogenic Temperatures"
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`Principal Investigator:S.Banerjee
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`Other Investigators: J.Lee
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`Sponsoring Agency: Texas Advanced Technology Program
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`Duration: November 1989- November 1991.
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`Grant title: "Polysilicon Transistor Modeling,"
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`Principal Investigator: S.Banerjee
`Sponsoring Agency: Motorola
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`Duration: September, 1991-August, 1993.
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`Grant title: "Acquisition of High Resolution Transmission Electron Microscope,"
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`Principal Investigator: L.Rabenberg
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`Other Investigators: S.Banerjee, J.Goodenough, A.Heller, P.Ho and A.Manthiram
`Sponsoring Agency: National Science Foundation
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`Duration: 10/92-10/93
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`Grant title: "Atomic Layer Epitaxy of Group IV Semiconductors,"
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`Co-Principal Investigator: S.Banerjee
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`Other Investigators: A.Tasch (P.I.), A.Cowley, J.Ekerdt and R.Jones
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`Sponsoring Agency: Office of Naval Research
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`Duration: February 1991-August 1996.
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`Grant title: "Materials and Bulk Processes"
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`Co-Investigator: S.Banerjee
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`Other Investigators: A.Tasch (PI), D.Kwong, J.Lee
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`Sponsoring Agency: SRC/ SEMATECH
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`Duration: September 1993- August 1998.
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`Grant title: "Synthesis, Growth and Analysis of Electronic Materials,"
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`Co-Investigator: S.Banerjee
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`Other Investigators: J.White (P.I) and 11 others from ECE, Chemistry and Physics
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`Sponsoring Agency: National Science
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`Duration: March 1991- March, 1996.
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`Grant title: "Transport in MOSFETs"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: Motorola
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`Duration: August, 1993-August, 1994.
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`Grant title: "Flash EEPROMs"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: AMD
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`Duration: May, 1993-December, 1996.
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`Grant title: "LDO Thin Film Transistors"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: Micron
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`Duration: March, 1993- April, 1995.
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`Grant title: "Ultra Shallow Junction Technology"
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`Principal Investigator: S.Banerjee
`Sponsoring Agency: SEMATECH
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`Duration: January 1994- December 1996.
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`Grant title: "SIMS Analysis of Polysilicon-on-Silicon"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: SEMATECH
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`Duration: September 1994- August 1995.
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`Grant title: "RTP Implant Monitors"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: SEMATECH
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`Duration: September 1995- August 1996.
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`Grant title: "Ultra-shallow Junction Formation and 2-D Dopant Profiling"
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`Principal Investigator:S.Banerjee
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`Other Investigators: K.Shih
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`Sponsoring Agency: Texas Higher Education Coordinating Board
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`Duration: January 1996- December 1997.
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`Grant title: "Analysis of Deep Submicron MOSFETs"
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`Principal-Investigator: S.Banerjee
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`Other Investigators: A.Tasch
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`Sponsoring Agency: Semiconductor Research Corporation
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`Duration: October 1998- September 1999.
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`Grant title: "Unrestricted Grant"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: Various Donors
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`Duration: No expiration
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`Grant title: "Synthesis, Growth and Analysis of Electronic Materials,"
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`Co-Investigator: S.Banerjee
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`Other Investigators: J.White (P.I) and 11 others from ECE, Chemistry and Physics
`Sponsoring Agency: National Science Foundation STC
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`Duration: March 1996- February, 2002.
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`Grant title: "Ultra-shallow Junction Process Integration"
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`Principal Investigator: S.Banerjee
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`Sponsoring Agency: SEMATECH
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`Duration: September 1997- December 2001.
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`Grant title: "Si and Ge Thin Film CVD, Modeling and Control"
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`Co-Principal Investigator: S.Banerjee
`Other Investigators: J.Ekerdt (P.I.), M.Downer, I.Trachtenberg; Univ. of Wisconsin
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`Sponsoring Agency: Dept. of Defense-MURI
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`Duration: July 1995-July 2000
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`CIRRUS EX. 1004 - 7/88
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`Grant title: "Ultra-shallow Junction Technology"
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`Principal Investigator:S.Banerjee
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`Sponsoring Agency: Texas Higher Education Coordinating Board
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`Duration: January 1998- August 2000.
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`Grant title: "Channel Engineering in Si-Ge-C MOSFETs "
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`Principal-Investigator: S.Banerjee
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`Other Investigators: A.Tasch
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`Sponsoring Agency: Semiconductor Research Corporation
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`Duration: October 1997- September 2000.
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`Grant title: "Advanced Annealing"
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`Principal Investigator:S.Banerjee
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`Sponsoring Agency: Texas Higher Education Coordinating Board
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`Duration: January 2000- December 2001.
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`Grant title: "Quantum Transport in Heterostructure MOSFETs "
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`Principal-Investigator: S.Banerjee
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`Other Investigators: A.Tasch
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`Sponsoring Agency: Semiconductor Research Corporation
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`Duration: October 1999- September 2002.
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`Grant title: "Front End Processing"
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`Principal-Investigator: S.Banerjee
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`Other Investigators: A.Tasch, D.Kwong, J.Lee
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`Sponsoring Agency: SRC/ SEMATECH
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`Duration: April 1998- March 2001.
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`Grant title: "Vertical Si-Ge-C MOSFETs "
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`Principal-Investigator: S.Banerjee
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`Sponsoring Agency: Semiconductor Research Corporation
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`Duration: September 2000-August 2003.
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`Grant title: "Compact Modeling of Gate Current"
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`Principal-Investigator: S.Banerjee
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`Other Investigators: F.Register
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`Sponsoring Agency: Semiconductor Research Corporation
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`Duration: July 2000- September 2003.
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`Grant title: "Ion Implantation Modeling"
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`Principal-Investigator: S.Banerjee
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`Other Investigators: A.Tasch
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`Sponsoring Agency: Semiconductor Research Corporation
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`Duration: July 2000- September 2001.
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`Grant title: "Front End Processing"
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`Principal-Investigator: S.Banerjee
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`Other Investigators: D.Kwong, J.Lee, F.Register
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`Sponsoring Agency: SRC/ SEMATECH
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`Duration: April 2001- March 2003.
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`Grant title: "MARCO Focus Center on Device Structures"
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`PI at UT: S.Banerjee
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`Other Investigators: D.Kwong (with MIT, Stanford, UC Berkeley)
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`Sponsoring Agency: DARPA/SRC
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`Duration: Award announced February 2001 (3 year contract)
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`Grant title: "SiGe Flash EEPROMS with Quantum Dot Gates"
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`Principal Investigator:S.Banerjee
`Sponsoring Agency: Texas Higher Education Coordinating Board
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`Duration: January 2002- December 2003.
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`Grant title: "MARCO Focus Center on Device Structures"
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`Principal-Investigator: S.Banerjee
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`Other Investigators: D.Kwong (with MIT, Stanford, UC Berkeley)
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`Sponsoring Agency: DARPA/SRC
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`Duration: Sept. 2003 (3 year contract)
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`Grant title: "High mobility Ge-channel MOSFETs "
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`Principal-Investigator: S.Banerjee
`Sponsoring Agency: Semiconductor Research Corporation
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`Duration: September 2003-August 2006.
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`Grant title: "Monte Carlo and Quantum transport "
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`Principal-Investigator: S.Banerjee
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`Co-PI: L.F.Register
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`Sponsoring Agency: Semiconductor Research Corporation
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`Duration: September 2003-August 2006.
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`Grant title: "NIRT on Quantum Dot Memories "
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`Principal-Investigator: S.Banerjee
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`Other Investigators:J.Ekerdt, F.Register, G.Hwang
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`Sponsoring Agency: NSF
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`Duration: September 2003-August 2007.
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`Grant title: "High mobility Ge-channel MOSFETs "
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`Principal-Investigator: S.Banerjee
`Sponsoring Agency: Texas Higher Education Coordinating Board
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`Duration: January 2004-Dec. 2005.
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`Grant title: “Advanced Materials Research Center"
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`Principal-Investigator: S.Banerjee
`Other Investigators: 15 others
`Sponsoring Agency: Texas
`Duration: January 2004- Dec.2005
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`Grant title: "Advanced Processing and Prototyping Center"
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`Principal-Investigator: S.Banerjee
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`Other Investigators: 18 others
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`Sponsoring Agency: DARPA
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`Duration: 2005- Dec.2006
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`Grant title: "SiGe Nanostructures"
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`Co-Principal-Investigator: S.Banerjee,
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`Other Investigators: R.Huang
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`Sponsoring Agency: DOE
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`Duration: 2006- Dec.2009
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`Grant title: "Dopant Diffusion Modeling"
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`Principal-Investigator: S.Banerjee,
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`Other Investigators: G.Hwang
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`Sponsoring Agency: SRC
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`Duration: 2006- Dec.2009
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`Grant title: "NNIN "
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`Site Director: S.Banerjee
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`Sponsoring Agency: NSF
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`Duration: January 2004- August.2015
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`Grant title: "MARCO MSD Focus Center "
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`UT PI: S.Banerjee
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`Sponsoring Agency: DARPA/SRC
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`Duration: Sept. 2007-2012
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`Grant title: "CERA"
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`Principal-Investigator: S.Banerjee
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`Co-PIs: F.Register, R.Ruoff, E.Tutuc, A.Macdonald, D.Akinwande
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`Sponsoring Agency: DARPA/IBM
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`Duration: Sept. 2007-2012
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`Grant title: "NASCENT ERC "
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`Principal-Investigator: Bonnecaze, Sreenivasan
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`Banerjee (Device Thrust co-Leader)
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`Sponsoring Agency: NSF
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`Duration: January 2013- Feb.2018
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`CIRRUS EX. 1004 - 10/88
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`Grant title: "Bay Area PV Conssortium led by Stanford/Berkeley"
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`Sponsoring Agency: DOE
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`Duration: Sept. 2015- August.2017
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`Grant title: "South West Academy of Nanoelectronics"
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`Director: S.Banerjee,
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`Other Investigators: F.Register, A.MacDonald and 15 others from 6 schools
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`Sponsoring Agency: SRC-NRI
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`Duration: 2006- Dec.2018
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`Grant title: "NSF-NNCI "
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`Site Director: S.Banerjee
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`Sponsoring Agency: NSF
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`Duration: Sept. 2015- August.2025
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`Grant title: "MURI-Room Temperature Polariton Condensates "
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`Principal-Investigator: Hui Deng (Michigan),
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`Co-PIs: S.Banerjee and 4 others
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`Sponsoring Agency: DoD MURI
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`Duration: Sept. 2017- August.2023
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`Grant title: “Soft-FET "
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`PI: J.Kulkarni, S.Banerjee (co-PI)
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`Sponsoring Agency: NSF
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`Duration: Sept. 2018- August.2022
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`Grant title: "EFRI- sub-cntract from UT Dallas"
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`PI: S.Banerjee
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`Sponsoring Agency: NSF
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`Duration: Sept. 2018- August.2022
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`Grant title: "3D CMOS using CVD TMD"
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`PI: S.Banerjee
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`Sponsoring Agency: SRC
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`Duration: Jan. 2021- Dec.2023
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`Ph.D. supervision:
`Keun Park, 1991
`Ting Hsu, 1991
`Sean Lian, 1991
`Shubneesh Batra,1992
`Sittampalam Yoganathan, 1992
`Burt Fowler, 1992
`David Kinosky, 1993
`Surya Bhattacharaya, 1993
`Brain Li, 1994
`
`Le-tien Jung, 1994
`Avinash Mahajan, 1994
`Chung-you Hu, 1995
`Indrajit Manna, 1995
`Akif Sultan, 1996
`Dean Samara, 1997
`Soji John, 1998
`Jacob Liu, 1999
`Rajan Sharma, 1999
`Ed Quinones, 1999
`David Kencke, 2000
`Christine Ouyang (with Tasch), 2000
`Xiangdong Chen, 2001
`Taehoon Kim, 2001
`Siva Mudanai (with Tasch), 2001
`Geng Wang (with Tasch), 2001
`Yang Chen (with Tasch), 2001
`Xin Wang, 2002
`Hong-Jyh Li, 2002
`Sung –Bo Hwang (with Edgar), 2002
`Di Li (with Tasch), 2002
`Yang-Yu Fan (with Register) 2002
`Zhonghai Shi, 2002
`Tat Ngai, 2002
`Dong-Won Kim, 2003
`Xiao Chen (with Rabenberg), 2003
`Puneet Kohli, 2003
`David Onsongo, 2003
`Kartik Jayanarayan, 2004
`Tongsheng Xia, (with Register), 2005
`Taras Kirichenko (with Hwang), 2005
`James Chen, 2005
`Swaroop Ganguly (with MacDonald), 2006
`Fei Lei (with Register), 2006
`Li Lin (2006)
`Sagnik Dey (2006)
`Xiangdong Fan (with Register) 2006
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`Yueran Liu, 2006
`David Kelly, 2006
`Xiaofeng Fan (with Register) 2006
`Bahniman Ghosh (with Register) 2007
`Sachin Joshi, 2007
`Joy Sarkar, 2007
`Joseph Donnelly, 2009
`Davood Shahrjerdi, 2008
`Shan Tang, 2008
`Rownak Zaman, 2008
`Ning Kong, 2009
`Yonghyun Kim, 2010
`Hai Liu 2010
`Dipanjan Basu (with Register), 2010
`Tackhwi Lee, 2010
`Se Hoon Lee, 2011
`Ferdousi Fahmida, 2011
`Jamil Mustafa, 2011
`John David (with Register) 2011
`Jung Hwan Yum, 2012
`Seyoung Kim, (with Tutuc) 2012
`Chang, Jiwon, (with Register) 2013
`Priyamvada Jadaun, (with Register) 2013
`Yujia Zhai, (with Willson) 2013
`Michael Ramon (with Akinwande) 2013
`Emmanuel Oneyagam, 2014
`Sayan Saha, 2015
`Urmimala Roy (with Register) 2015
`Jason Mantey, 2015
`Donghyi Koh (2016)
`Chris Corbet (with Tutuc) 2016
`Sangwoo Kang (2016)
`William Hsu (2016)
`Andreas Hsieh (2017)
`Tanuj Trivedi (with Neikirk) (2017)
`Atresh Sanne (2017)
`Tanmoy Pramanik (with Register) (2018)
`Jaehyun Ahn (2018)
`Hema Movva (with Tutuc) (2018)
`Harry Chou (2018)
`Amritesh Rai (2019)
`Rik Dey (with Register) (2019)
`Omar Mohammed (2019)
`Aqyan Bhatti (with Register) (2020)
`Sayema Chowdhury (2022)
`Teja Subrahmanyan (with Kulkarni)
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`M.S.:
`D.Bullock, 1990
`K.Picone, 1991
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`J.Shen, 1991
`R.Kovelamudi, 1992
`S.Krishnan, 1992
`M.Lobo, 1992
`S.Ngaoram, 1993
`A.Khan, 1993
`D.Khanderkar, 1993
`H.Taufique, 1994
`S.Madireddi, 1994
`J.Fretwell, 1995
`M.Craig, 1995
`J.Williamson, 1995
`K.Reddy, 1995
`J.Damiano, 1995
`R.Gupta, 1995
`K.Hassan, 1996
`A.Lentvorski, 1997
`S.Oswal, 1998
`C.Seal, 1998
`V.Agarwal, 1999
`S.Nandan, 1999
`S.Ravi, 1999
`T.Ngai, 1999
`V.Medina, 1999
`H.Rahman, 1999
`C.Twu, 2000
`S. Oak, 2001
`G. Shrivastava, 2001
`R. Deppensmith, 2002
`M. Swaminathan, 2002
`L. Lin, 2003
`L.Weltzer, 2004
`D.Ahmad, 2005
`I.Wiedmann, 2005
`S. Ramachandran, 2005
`A.Nanda 2007
`N. Jain, 2008
`N.Vora, 2008
`K. Varahramyan, 2008
`S. Kaur, 2010
`Stephen Sczepaniak, 2015
`Jessica Depoy, 2020
`Alexander Klatt, 2021
`Nick Pronin, 2021
`Isaac Bideman, 2022
`
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`Postdocs: Samit Ray (Chair Physics, IIT, Dean S N Bose Institute), Mark Loewe (IBM), Amitava
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`Das (startup), Sabrina Grannan (NASA JPL), Freek Prins (Germany), Chuanbin Mao (Chair Prof.
`Oklahoma), Bhagawan Sahu (Global Foundries), Mathew Gilbert
`(Assoc. Prof. UIUC),
`Donwan.Ahn (Korea), Domingo Ferrer (IBM), Aparna Gupta (IIT), Samaresh Gucchait (Asst.
`Prof,. Howard), Sushant Sonde (Argonne), SeHoon Shin (Samsung), Priyamvada Jadaun
`(Cornell/IMEC), Marylene Palard, Bahniman Ghosh (IIT), Rudresh Ghosh (NovaCentrix), Victor
`Chi, Sungkyu Kwon, Seung Heon Shin (Samsung), Anupam Roy (Asst. Prof. IIT), Sarmita
`Majumder (Sheetak), Ansh Gupta (IMEC), Nupur Navlakja, Prakriti Neha, Nilesh Pandey
`
`Currrent Post-docs: Nilesh Pandey, Prakriti Neha, Nupur Navlakha
`
`In progress (Ph.D):
`Mathew DiSiena, Chris Luth, Ryan Schalip, Moonkyu Song, Siyu Wu, Sunny Bhakta, Teja
`Subrahmanya, Hadi Darkhaneh, Jatin Singh, Hongming Zhang, Ashkan Aminian, Luke Sloan
`
`
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`CIRRUS EX. 1004 - 15/88
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`

`Books and Invited Book Chapters:
`1. Solid State Electronic Devices, 5th Ed. (2000), 6th Ed. (2005), 7th Ed. (2015), Prentice-Hall by
`B.Streetman and S.Banerjee
`2. Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-κ/Metal Gate
`Metal-Oxide-Semiconductor Devices, D. Q. Kelly, J. J.-H. Chen, S. Guha, and S. K. Banerjee.
`Invited Book chapter, Springer, 2007.
`3. SiGe HFETs, S.Banerjee, The Silicon Heterostructure Handbook, 2005, Edited by John
`Cressler.
`4. High-k Gate Dielectrics, Y.Fan. S.Mudanai, L. Register and S.Banerjee, 2003
`5. Device Miniaturization and Simulation, S.Banerjee and B.Streetman in ULSI Devices, John
`Wiley, 2000 (C.Chang and S.Sze editors)
`6. Dopant Diffusion, S.Banerjee in Handbook of Semiconductor Manufacturing Technology,
`Marcel Dekker, 2000, 2006 (Y.Nishi, B.Doering and J.Kilby editors).
`7. Silicon-germanium Devices, S.Banerjee, Elsevier, 2001.
`8. Novel 3D CMOS, S.Dey and S.Banerjee, Solid State Electronics Trends, 2009
`9. X. Mou, L. F. Register and S. K. Banerjee, “Ultra-low-power pseudospintronics devices via
`exciton condensation in coupled two-dimensional material systems,” in Nanoscale Materials and
`Devices for Electronics, Photonics and Solar Energy, Ed. Stephen Goodnick, Anatoli Korkin and
`Robert Nemanich, Springer, 2015
`10. D. Reddy, L. F. Register and S. K. Banerjee, "Bilayer pseudoSpin Field Effect Transistor
`(BiSFET)" in "Beyond CMOS Logic Switches," T.-J. King and K. Kuhn, Eds., Cambridge:
`Cambridge Univ. Press, 2015.
`11. Devices and defects in two-dimensional materials: outlook and perspectives, A Rai, A Roy, A
`Valsaraj, S Chowdhury, D Taneja, Y Wang, LF Register, SK Banerjee Defects in Two-
`Dimensional Materials, 339-401 (Invited Book Chapter) 2021.
`
`
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`CIRRUS EX. 1004 - 16/88
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`

`

`9/11/2012
`transistor, S.Banerjee, L.Register, A.MacDonald,
`
`11/19/2020
`
`
`1. US20200365464
`Catalyst influenced chemical etching for fabricating three-dimensional sram
`architectures and optical waveguides, S.Sreenivasan, A.Mallavarapu, J.Kulkarni,
`M.Watts and S.Banerjee
`11/06/2018
`
`
`2. US10,121,962
`Method for fabricating magnetic solid state devices. L.F.Register, B.Ghosh,
`R.Dey and S.Banerjee
`11/21/2017
`
`
`
`3. US9,825,218
`Transistor that employs collective magnetic effects thereby providing improved
`energy efficiency, A.MacDonald, L.F. Register, E. Tutuc, I. Sodemann, H. Chen,
`X. Mou, S. Banerjee
`4/29/2014
`
`
`
`4. US8,709,892
`Nanoparticles in a flash memory using chaperonin proteins, C.Mao, S.Tang and S.Banerjee
`
`
`
`1/14/2014
`5. US8,629,427
`Topological insulator-based field-effect transistor, S.Banerjee, L.Register, A.MacDonald,
`B.Sahu, P.Jadaun and J.Chang
`
`
`
`6. US8,263,967
`Bi-layer pseudo-spin
`field-effect
`D.Reddy, E.Tutuc
`6/12/2012
`7. US8,198,707
`
`
`
`Establishing a uniformly thin dielectric layer on graphene in a semiconductor device
`without affecting the properties of graphene, L.Colombo, S.Banerjee, S.Kim, E.Tutuc
`
`
`
`5/29/2012
`8. US8188460
`Bi-layer pseudo-spin
`field-effect
`transistor, S.Banerjee, L.Register, A.MacDonald,
`D.Reddy, E.Tutuc
`8/30/2011
`
`
`9. US8,008,649
`Incorporating gate control over a resonant tunneling structure in CMOS to reduce off-state
`current leakage, supply voltage and power consumption, L.Register and S.Banerjee
`
`
`
`6/1/2004
`10. US6,744,083
`Submicron MOSFET having asymmetric channel profile, X.Chen and S.Banerjee
`7/16/2002
`11. US6,420,219
`Thin film transistor and method, S.Batra, M.Manning, S.Banerjee and J.Damiano
`11/20/2001
`12. US06320202
`Bottom gated thin film transistors comprising Ge in a channel region, S.Banerjee and
`S.Batra
` 11/20/2001
`
`
`13. US06,319,799
`High mobility heterojunction transistor and method, Q.Ouyang, A.Tasch and S.Banerjee
`14. US06,313,486, 11/06/2001
`Floating gate transistor having silicon germanium channel layer, D.Kencke and S.Banerjee
`
`
`11/06/2001
`15. US06,313,487
`Vertical channel floating gate transistor having SiGe channel layer, D.Kencke and
`S.Banerjee
`4/10/2001
`16. US06214652
`Thin film transistor and method of forming thin film transistors, S.Batra, M.Manning,
`S.Banerjee and J.Damiano
`17. US06,200,839
`
`3/13/2001
`
`CIRRUS EX. 1004 - 17/88
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`

`

`Methods of making thin film transistors, S.Batra, M.Manning, S.Banerjee and L.Jung
`12/26/2000
`18. US06166398
`Thin film transistors, S.Batra, M.Manning, S.Banerjee and L.Jung
`01/25/2000
`19. US06017782
`Thin film transistor and method of forming thin film transistors, S.Batra, M.Manning,
`S.Banerjee and J.Damiano
`11/16/1999
`20. US05985703
`Method of making thin film transistors, S.Banerjee
`11/02/1999
`21. US05977560
`Thin film transistor constructions with polycrystalline silicon-germanium alloy doped with
`carbon in the channel region, S.Banerjee and S.Batra
`09/14/1999
`22. US05953596
`Methods of forming thin film transistors, S.Batra, M.Manning, S.Banerjee and L.Jung
`08/10/1999
` Thin
`film
`transistors, S.Batra,
`23. US05936262
`M.Manning, S.Banerjee and J.Damiano
`05/18/1999 Method of forming thin film transistors,
`24. US05904513
`S.Batra, M.Manning, S.Banerjee and J.Damiano
`09/09/1997
`25. US05665981
`Thin film transistors and method of promoting large crystal grain size in the formation of
`polycrystalline silicon alloy thin films, S.Banerjee and S.Batra
`08/20/1996
`26. US05548132
`Thin film transistor with large grain size DRW offset region and small grain size source
`and drain and channel regions, S.Batra, M.Manning, S.Banerjee and J.Damiano
`08/13/1996
`27. US05546340
`Non-volatile memory array with over-erase correction, C.Hu, R.Richart, S.Garg and
`S.Banerjee
`07/25/1995
`28. US05436474
`Modulation doped field effect transistor having built-in drift field, S.Banerjee, A.Tasch and
`B.Streetman
`07/11/1995
`29. US05432366
`P-I-N MOSFET for ULSI applications, S.Banerjee, S.Bhattacharya and W.Lynch
`04/28/1992
`30. US05109259
`Multiple DRAM cells in a trench, S.Banerjee
`11/19/1991
`31. US05066607
`Method of making a trench DRAM cell with dynamic gain, S.Banerjee
`03/12/1991
`32. US04999811
`Trench DRAM cell with dynamic gain, S.Banerjee
`11/06/1990
`33. US04969019
`Three-terminal tunnel device, S.Banerjee
`09/05/1989
`34. US04864374
`Two-transistor dram cell with high alpha particle immunity, S.Banerjee
`12/15/1987
`35. US04713678
`dRAM cell and method, R.Womack, H.Shichijo, S.Banerjee and S.Malhi
`
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`CIRRUS EX. 1004 - 18/88
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`1. M. Keever, H. Shichijo, K. Hess, S.Banerjee, L. Witkowski, H. Morkoc and B. Streetman,
`“Measurements of Hot-Electron Conduction and Real Space Transfer in GaAs-AlGaAs
`Heterojunction Layers,”Appl. Phys. Lett., 38(1), 36-38, January 1981.
`2. S.Banerjee and B. Streetman, “Experimental Studies of Laterally Seeded Recrystallized Polysilicon
`on Silicon Dioxide,” Proc. of IEEE UGIM, v.5, pp.79-83, May 1983.
`3. S.Banerjee and B. Streetman, “Theoretical and Experimental Study of Swept Line Electron Beam
`Annealing of Semiconductors,” J. Appl. Phys., 54(6), 1947-1955, June 1983.
`4. S.Banerjee and B. Streetman, “Electron and Hole Traps in Silicon-on-Oxide Grown Using Lateral
`Epitaxy by Seeded Solidification,” J. Phys. D: Appl. Phys., November 1983.
`5. S.Banerjee, R. DeJule, K. Soda and B. Streetman, “Planar Be-Implanted GaAs Junction Formation
`Using Swept-Line Electron Beam Annealing,” IEEE Trans. Elec. Dev., 30 (12), 1755-1760,
`December 1983.
`6. S.Banerjee, B. Lee, J. Baker, D. Reed and B. Streetman, “Annealing of Ion-Implanted Silicon-on-
`Insulator Films Using a Scanned Graphite Strip Heater,” Thin Solid Films, 115, 19-26, 1984.
`7. H. Shichijo, S. Malhi, A. Shah, G. Pollack, W. Richardson, M. Elahy, S.Banerjee, R. Womack and
`P. Chatterjee, “TITE RAM: A New SOI DRAM Gain Cell for MBit DRAMs,” Proc. of ICSSDM,
`v. 16, pp. 265-268, June, 1984.
`8. S.Banerjee, R. Tong, B. Lee, R. DeJule, B. Streetman and H. Lam, “Implantation and Annealing
`Studies of Laterally Seeded Recrystallized Silicon on Silicon Dioxide,” J. Electrochem. Society,
`131(6), 1409-1416, June 1984.
`9. G. Pollack, W. Richardson, S. Malhi, T. Bonifield, H. Shichijo, S.Banerjee, M. Elahy, A. Shah, R.
`Womack and P. Chatterjee, “Hydrogen Passivation of Polysilicon MOSFETs From a Plasma
`Nitride Source,” IEEE Elec. Dev. Letters, 5(11), 468-470, November 1984.
`10. S.Banerjee, M. Elahy, H. Shichijo, G. Pollack, W. Richardson, S. Malhi, A. Shah, P. Chatterjee, H.
`Lam and R. Womack, “Comparison of Accumulation and Inversion Mode LPCVD Polysilicon
`MOSFET Characteristics for Memory Applications,” IEEE Trans. Elec. Dev., 31(12), 1983,
`December 1984.
`11. M. Elahy, H. Shichijo, P. Chatterjee, A. Shah, S.Banerjee, and R. Womack, “Trench Capacitor
`Leakage in High Density DRAMs,” IEEE Elec. Dev. Letters, 5(12), 527-530, December 1984.
`12. M. Elahy, H. Shichijo, P. Chatterjee, A. Shah, S.Banerjee and R. Womack, “Trench Capacitor
`Leakage in MBit DRAMs,” IEEE IEDM Technical Digest, p. 248-251, December 1984.
`13. H. Shichijo, S. Malhi, W. Richardson, G. Pollack, A. Shah, L. Hite, S.Banerjee, M. Elahy, R.
`Sundaresan, R. Womack, H. Lam and P. Chatterjee, “Polysilicon Transistors in VLSI MOS
`Memories,” Invited Talk, IEEE IEDM Technical Digest, p. 228-231, December 1984.
`14. S.Banerjee, “Reliability Studies on Thin Film Polysilicon MOSFETs,” T.I. Semiconductor
`Reliability Workshop, Dallas, Texas, September 1984.
`15. H. Shichijo, S.Banerjee, G. Pollack, W. Richardson, M. Bordelon, A. Shah, S. Malhi, M. Elahy, R.
`Womack, C. Wang, J. Gallia, H. Davis and P. Chatterjee, “Trench Transistor DRAM Cell,” IEEE
`Elec. Dev. Letters, 7(2), 119-121, February 1985.
`16. S.Banerjee and B. Streetman, “Planar Junctions in Silicon on Oxide Grown Using Lateral Epitaxy
`by Seeded Solidification,” IEEE Trans. Elec. Dev., 32(4), 850-853, April 1985.
`17. S.Banerjee and J. Baker, “Proximity Annealing of Sulfur-Implanted Gallium Arsenide Using a
`Strip Heater,” Jap. J. Appl. Phys., 24(5), L377-L379, May 1985.
`18. J. Fossum, A. Ortiz.Conde, H. Shichijo and S.Banerjee, “Anomalous Leakage Current in LPCVD
`Polysilicon MOSFETs,” IEEE Trans. Elec. Dev., 32(9), 1878-1884, September 1985.
`19. W. Richardson, D. Bordelon, G. Pollack, A. Shah, S. Malhi, H. Shichijo, S.Banerjee, M. Elahy, R.
`Womack, C. Wang, J. Gallia, H. Davis and P. Chatterjee, “A Trench Transistor Cross-Point DRAM
`Cell,” IEDM Technical Digest, 714-717, December 1985.
`20. H. Shichijo, S. Malhi, R. Sundaresan, S.Banerjee and H. Lam, “Process and Device Considerations
`for Small Grain Polysilicon MOS Transistors,” Invited paper, Proc. Mat. Res. Soc., v.53, pp.419-
`428, December 1985.
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`CIRRUS EX. 1004 - 19/88
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`21. S. Malhi, H. Shichijo, S.Banerjee, R. Sundaresan, M. Elahy, G. Pollack, W. Richardson, A. Shah,
`L. Hite, R. Womack, P. Chatt