as United States
`a2) Patent Application Publication co) Pub. No.: US 2001/0019486 A1
`
` Thominet (43) Pub. Date: Sep. 6, 2001
`
`
`US 20010019486A1
`
`(54) TLLUMINATION DEVICE FOR VEHICLE
`
`Publication Classification
`
`(76)
`
`Inventor: Vincent Thominet, Echandens (CH)
`
`Correspondence Address:
`STRIKER, STRIKER & STENBY
`103 East Neck Road
`Huntingt
`Y 11743 (US
`untington, N
`(Us)
`(21) Appl. No.:
`09/793,952
`
`(22)
`
`Filed:
`
`Feb. 27, 2001
`
`(30)
`
`Foreign Application Priority Data
`
`(SD)
`(52)
`
`Tint, Cd?ccceeceecssseneeeeceesnnseeseensnevceeeees B60Q 3/04
`UWS. Ch cccscscceenee 362/543; 362/545; 362/800;
`362/235
`
`(57)
`ABSTRACT
`An illumination device for a vehicle has a plurality of
`semiconductor sources distributed in a matrix, at least one
`optical active element whichis located in a path of rays of
`a light emitted by the semiconductor sources, the semicon-
`ductor sources are arranged in partial quantities in different
`defined partial regions of the matrix and the partial quanti-
`ties of the semiconductor sources are operatable indepen-
`
`Mar. 1, 2000
`
`(DE)... eee teeeeesseeeeees 100 09 782.0
`
`dently from one another.
`
`Mercedes EX1006
`U.S. Patent No. 11,208,029
`
`Mercedes EX1006
`U.S. Patent No. 11,208,029
`
`

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`Patent Application Publication
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`US 2001/0019486 A1
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`Sep. 6, 2001 Sheet 1 of 3
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`Patent Application Publication
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`US 2001/0019486 A1
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`Sep. 6, 2001 Sheet 2 of 3
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`Patent Application Publication
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`Sep. 6, 2001 Sheet 3 of 3
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`US 2001/0019486 A1
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`FIG. 6
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`US 2001/0019486 Al
`
`Sep. 6, 2001
`
`ILLUMINATION DEVICE FOR VEHICLE
`
`BACKGROUND OF THE INVENTION
`
`[0001] The present invention relates to an illumination
`device for a vehicle.
`
`Illumination devices for vehicles are known and
`[0002]
`wisely used. One of such illumination devices is disclosed
`for example in the German patent document DE 42 28 895.
`The illumination device has a plurality of semiconductors
`light sources arranged in a matrix. In a path of rays of light
`emitted by the semiconductor light sources, an optically
`active element
`is arranged and formed as a disc.
`It
`is
`provided with optical profiles in macroscopic size in form of
`lenses or prisms or in microscopic size in form of a diffrac-
`tion grate. The optical profiles in a macroscopic size provide
`a predetermined characteristic for a light beam which exits
`the illumination device. The semiconductor light sources
`cmit lights of different colors and cach semiconductorlight
`source sends only light of one color. With the optical profiles
`in microscopic size, a mixture of the lights emitted by the
`different semiconductorlight sources is obtained. Therefore,
`light exiting the illumination device has a uniform,
`for
`example white color.
`
`[0003] This illumination device is howeverusable only for
`one function, since the light beam exiting the device always
`has the same characteristic. The term “characteristic” of the
`
`its
`its direction,
`light beam includes here a light color,
`reaching distance, dispersion width and illumination inten-
`sity distribution produced byit.
`
`SUMMARY OF THE INVENTION
`
`[0004] Accordingly, it is an object of the present invention
`to provide an illumination device for a vehicle which has the
`advantage that by the operation of different partial numbers
`of semiconductor sources,
`the characteristic of the light
`beam exiling the illumination device can be changed so that
`it can be used for different functions.
`
`feature of present
`In accordance with another
`(0005]
`invention, with the partial numbers of the semiconductor
`sources arranged in different defined partial regions, light of
`different colors is emitted and the partial quantities of the
`semiconductor light sources are operatable for producing a
`predetermined color of the light beam exiting the illumina-
`tion device. In this construction the emission of the light
`beams of different
`light colors is possible, so that
`the
`illumination device can be used for example for different
`signal functionsor for one signal function and as a headlight.
`
`In accordance with another feature of the present
`[0006]
`invention, in the matrix a partial region is defined, by which
`semiconductor light sources produce a concentric light
`beam. This makespossible the use of the illumination device
`as a headlight with a strong illumination of a distance
`located far from the vehicle.
`
`In accordance with still another feature of present
`[0007]
`invention, a partial region is defined in the matrix, by which
`the semiconductor light source produces a horizontally
`dispersed light beam. This makes possible the use of the
`illumination device as a headlight with a wider illumination
`in front to of the vehicle, as is specifically advantageousat
`low speeds, for example in street traffic and/or with low
`visibility distance for example in fog.
`
`In accordance with another feature of present
`[0008]
`invention, in the matrix at least one partial region is defined,
`by which the semiconductor light sources produce at one
`side a light beam oriented to the right or to the left. This
`allow the use of the illumination device as a headlight with
`a one-sided oriented illumination in front of the vehicle, as
`especially advantageous during diving over a curve or in the
`case of a bending of the vehicle.
`
`[0009] The novel features which are considered as char-
`acteristic for the present invention are set forth in particular
`in the appended claims. The inventionitself, however, both
`as to its construction and its method of operation, together
`with additional objects and advantages thereof, will be best
`understood from the following description of specific
`embodiments when read in connection with the accompa-
`nying drawings.
`
`BRIEF DESCRIPTION OF THE DRAWINGS
`
`[0010] FIG. 1 is a view showing an illumination device
`for a vehicle in a schematic representation in accordance
`with the present invention;
`
`FIG.2 is a view showing a matrix of semiconduc-
`(0011]
`tor light sources of the illumination device in accordance
`with the first embodiment of present invention;
`
`[0012] FIG. 3 is a view showing a matrix of semiconduc-
`tor light sources in accordance with the second embodiment
`of the present invention;
`
`[0013] FIG. 4 is a view showing a measuring screen
`arranged in front of the illumination device in accordance
`with the present invention and illuminated by light emitted
`by the latter;
`
`{0014] FIG. 5 is a view showing a semiconductor source
`in accordance with a first embodimentof the present inven-
`tion;
`
`{0015] FIG. 6 is a view showing a semiconductor source
`in accordance with the second embodimentof the present
`invention; and
`
`[0016] FIG. 7 is a view showing a semiconductor source
`in accordance with a third embodiment.
`
`DESCRIPTION OF THE PREFERRED
`EMBODIMENT
`
`{0017] FIG. 1 showsan illumination device for a vehicle,
`in particular a motor vehicle. The illumination device is
`arranged at the front end of the vehicle and is used for
`example as a headlight. Two substantially identically formed
`illumination devices can be arranged at the front end, as
`conventional headlights. The illumination device has a plu-
`rality of semiconductor sources 10 which are distributed in
`a matrix. A support element 12 can be provided, on which
`the semiconductor light sources 10 are held andelectrically
`contacted.
`
`sources 10 can be
`light
`semiconductor
`{0018] The
`arranged approximately in one plane, or can be distributed
`over a concavely curved surface or a stepped surface. The
`surface for example can have a substantially spherical
`curvature. In a path of rays of the light emitted by the
`semiconductor light sources, an optically active element 14
`is arranged and formed as a collecting lens. The collecting
`
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`US 2001/0019486 Al
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`Sep. 6, 2001
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`lens 14 beams the light which is emitted by the semicon-
`ductor light sources 10 and passes through the collecting
`lens 14. Thereby it exits the illumination device with a
`predetermined characteristic.
`
`[0019] Avscreen 16 can be arranged betweenthe semicon-
`ductor sources 10 and the collecting lens 14. The screen
`screens a part of the light emitted by the semiconductor
`sources 10 and thereby produces a bright-dark limit of the
`light beam exiting the illumination device. The screen 16 is
`arranged substantially under an optical axis 18 of the illu-
`mination device. Position and shape of the bright-dark limit
`of the light beam exiting the illumination device is deter-
`mined by the position and the shape of the upper edge 17 of
`the screen 16 which is formed by the collecting lens 14 and
`revised in height and laterally.
`[0020] With the use of the illumination device only as a
`headlight, preferably the semiconductor light sources 10 are
`utilized, which all emit at least approximately white light.
`The matrix of the semiconductor light sources 10 in accor-
`dance with the first embodiment
`is shown in FIG. 2.
`Predetermined partial regions are defined on the matrix, in
`whichpartial numbers of the semiconductorlight sources 10
`are arranged. The semiconductor light sources 10 arranged
`in the different partial regions are actuatable independently
`from the semiconductor sources 10 arranged in the remain-
`ing partial regions. It can be provided that the semiconductor
`sources 10 of each partial region are jointly contacted or
`semiconductor light sources of at least one region which is
`further subdivided in a partial region are jointly contacted,
`so that they must not be controlled individually for the
`operation.
`{0021] A first partial region 22 with a partial quantity of
`the semiconductor sources 10 is defined on the matrix. It
`
`extends downwardly starting from an upper edge of the
`matrix and is arranged substantially symmetrically at both
`sides of a vertical central plane 19 of the matrix. In a
`horizontal direction the partial region 22 extends not com-
`pletely to the lateral edges of the matrix. The lower edge of
`the partial region 22 can have for example the shape ofthe
`bright-dark limit, which must be providedfor the light beam
`exiting the illumination device. In this case the screen 18 is
`dispensed with. The lower edge ofthe partial region 22 can
`have any other arbitrary form, when the screen 18 is
`provided for producing the bright-dark limit. When the
`semiconductor light sources 10 of the pressure region 22 are
`operated, the light emitted by them produces an asymmetri-
`cal low beam beam which exits the illumination device.
`
`[0022] FIG. 4 shows a measuring screen 80 which is
`arranged at a distance from the illumination device.
`It
`represents a projection of a roadway located in front of the
`illumination device and correspondingly illuminated. The
`measuring screen 80 hasa vertical central plane identified as
`VV and a horizontal central plane identified as HH. They
`intersect in a point HV. The light emitted by the semicon-
`ductor sources 10 and exiting the illumination device, illu-
`minates the measuring screen 80 in a region 82 which is
`limited from above by an asymmeirical bright-dark limit 83,
`84. The bright-dark limit has for example at the counter
`traffic side whichis a left side of the measuring screen 80 in
`the case of a right traffic, a horizontal portion 83. At the
`trattic side itself which is a right side of the measuring screen
`80 in the case of a nighttraffic, it has a portion 84 which
`raises starting from the portion 83.
`
`[0023] Asecondpartial region 24 with a partial quantity of
`the semiconductor sources 10 is defined in the matrix. When
`compared with the partial region 22, it has a smaller size.
`The partial region 24 is arranged substantially in the center
`of the matrix and extends upwardly not to the edge of the
`matrix and extends downwardly further than the partial
`region 22. When the semiconductor sources 10 ofthe partial
`region 24 are operated,the light emitted by them is produced
`as a concentric light beam which exits the illumination
`device. The concentric light beam illuminates the region 86
`on a measuring screen 80, which has a smaller expansion
`when compared with the region 82 and partially extends
`outwardly beyondthe bright-dark limit 83, 84 of the region
`82. With the concentric light beam,first of all the far region
`in front of the vehicle is illuminated. The semiconductor
`
`light sources 10 of the partial region 24 can be operated for
`example for producing a high beam beam orfor improving
`the illumination of the far region in front of the vehicle at
`high speeds.
`[0024] A third partial region 26 can be defined by the
`partial quantity of the semiconductor sources on the matrix.
`It has a smaller extension in a vertical direction than the
`
`partial region 22, but a greater extension in a horizontal
`direction. The partial region 26 can extend over the total
`width of the matrix. The partial region 26 extends from the
`upper edge of the matrix downwardly and ends howeverat
`a distance from the lower edge of the partial region 22. The
`lower edge of the partial region 24 can extend substantially
`horizontally. When the semiconductor sources 10 of the
`partial region 26 are operated, then the light emitted by them
`produces the horizontally dispersed light beam whichexits
`the illumination device. With the horizontally dispersed light
`beam,a region 88 of the measuring screen 80 is illuminated.
`Ii has a greater extension in a horizontal direction than the
`region 82, however a smaller extension in a vertical direc-
`tion. The region 88 is limited upwardly by a substantially
`horizontal bright-dark limit 89 which extends under the
`bright-dark limit 83, 84 of the region 82. ‘the semiconductor
`sources 10 of the partial region 26 can be operated for
`example in the case of low sight distance, such as for
`example in fog, or in the case of low speeds.
`{0025] A fourth partial region 28 with a partial quantity of
`the semiconductor light sources 10 can be defined on the
`matrix. It is located nearthe lateral edges of the matrix. The
`fourth partial region 28 has a substantially smaller extension
`in a horizontal direction than the first partial region 22 and
`extension in a vertical direction which is substantially equal
`to 20 that of the partial region 22. The fourth partial region
`28 extends betweenthefirst partial region 22 and the lateral
`edges of the matrix. When the semiconductor sources 10 of
`the fourth partial region 28 are operated,
`then the light
`emitted by them produces a one-side oriented light beam
`whichexits the illumination device. The fourth partial region
`28 which is left as considered from the semiconductor
`
`sources 10 in the light outlet direction, illuminates a region
`90 of the measuring screen 80 whichis arrangedat the right
`of the region 82. The fourth partial region 28 whichis right
`from the semiconductorlight sources 10 as consideredin the
`light outlet direction, illuminates a region 91 of the mea-
`suring screen 80 which is arranged at the left of the region
`82. The semiconductor sources 10 of one of the fourth partial
`regions 28 are preferably operated when the vehicle drives
`over a curve or during a bending process. The semiconduc-
`tor light sources 10 of the partial region 28 are operated so
`
`

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`US 2001/0019486 Al
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`Sep. 6, 2001
`
`that the light emitted by each of them provides an illumi-
`nation in the correspondingtraveling direction.It can be also
`provided that the semiconductor light sources 10 of both
`fourth partial regions 28 are operated. This can be advan-
`tageous for example at low speeds of the vehicle, to ensure
`illumination in front of the vehicle over a great width.
`
`[0026] By operation of the light sources 10 of the corre-
`sponding partial region 22, 24, 26, 28 in a simple mannerit
`is possible to switch over between the above mentioned
`different
`light functions. Such a switchover can be per-
`formed manually by the vehicle driver or automatically by
`a control device depending on the operational parameters of
`the vehicle, such as for example the speed and/or the
`steering wheel action and/or depending on other parameters
`such as for example the wiper and/or sensor system, such as
`for example for recognizing a countertraffic. The switching
`overof the operation of the semiconductor sources 10 of the
`partial region 22, 24, 26, 28 to the operation of the semi-
`conductor light sources of another partial region can be
`performed with continuous or abrupt transition.
`
`In accordance with a second embodiment of the
`[0027]
`invention, which is shown in FIG.3, partial regions with
`partial quantities of the semiconductor sources 10 are
`defined on the matrix, and the semiconductor sources 10 of
`the different partial regions emit lightof different colors, but
`the light color of the semiconductor sources 10 of one partial
`region is uniform. It can be for example provided that in a
`partial region 30 of the matrix, the semiconductor sources 10
`are arranged which emit at least approximately white light.
`The partial region 30 can take the greater part of the matrix.
`In a partial region 32 the semiconductor sources 10 can be
`arranged which emit the colored light, for example at least
`approximately orange-colored light. The illumination device
`can be in this case used as a headlight by operating the
`semiconductor sources 10 of the partial region 30, and for
`example as a blinking light by operating the semiconductor
`sources 10 in the partial region 32.
`
`[0028] Light diodes can be used as a semiconductor
`sources 10, and they emit a visible radiation when current
`flows through them. Moreover laser diodes can be also
`utilized which provide the direct conversion of electrical
`energy into laser light. It can be provided that the semicon-
`ductor sources 10 can have each a chip for a light generation
`which emitsthe light of a predetermined color. Alternatively
`it can be provided that the semiconductor sources 10 have
`several, for example three chips, which emit the light of
`ditferent colors, and a semiconductor providing a mixture of
`the colors, so that it emits jointly at least approximately
`white light. It can be also provided that one chip emits red
`light, one chip emits green light, and one chip emits blue
`light.
`
`In FIG. 5 the semiconductor source 10 in accor-
`[0029]
`dance with the first embodimentis illustrated. It is provided
`with one or several chips 40. The chips 40 are surrounded by
`the reflector 42, so that light from the chips 40 isreflected
`by the reflector. An optical element 43 formed as a lens with
`a spherical or aspherical curvature is arranged in the path of
`rays of the light which is emitted by the chips 40 and
`reflected by the reflector 42. The light emitted by the chips
`40 is reflected by the reflector 42, collected by the lens 43
`and oriented at least approximately parallel. The lens 43 can
`also provide a mixture of the colors of the lights emitted by
`
`the chips 40, so that at least approximately a white lightis
`emitted by the semiconductor light source 10. The lens 42
`can be composed for example as a synthetic plastic and
`formed on a covering which surrounds the chip 40 and the
`reflector 42.
`
`[0030] FIG. 6 shows a semiconductor source 10 in accor-
`dance with a second embodiment ofthe invention. Here also
`
`one of several chips 44 are used for producing light. The
`chips 44 are surrounded by a casing 45 which on the rear
`side of the semiconductor sources 10 is formed totally
`reflecting on the inner side. Therefore the light emitted by
`them from the chips 44 is reflected, passes through one or
`several lenses 46 formed on the front side of the semicon-
`ductor source 10, and therefore is collected.
`
`[0031] FIG. 7 shows a semiconductor sources 10 in accor-
`dance with the second embodiment of the invention. Here
`
`again one of several chips 48 are provided and surrounded
`by a reflector 49. Therefore the light emitted by the chip 48
`is reflected by the reflector. An optical element 50 is
`arranged in the path of rays of the light emitted by the chip
`48 and reflected by the reflector 49. It has at least one
`diffraction-optical structure which deviates the passing light.
`Preferably,
`the optical element 50 has three diffraction-
`optical structures in correspondence with the numberand the
`light color of the chip 48. They are formed in one layer or
`over different layers of the element 50. Each structure is
`determined in accordance with a light color, so that light of
`this light color is deviated in a definite manner by the
`structure. The diffraction-optical structures of the optical
`element 50 is formed for example a diffraction grater. They
`can be applied for example as a holographic interference
`pattern by a photographic or photo-lithographic method.
`[0032]
`It will be understood that each of the elements
`described above, or two or more together, may also find a
`useful application in other types of constructions differing
`from the types described above.
`[0033] While the invention has been illustrated and
`described as embodied in illumination device for vehicle,it
`is not intended to be limited to the details shown, since
`various modifications and structural changes may be made
`without departing in any way from the spirit of the present
`invention.
`
`[0034] Without further analysis, the foregoing will so fully
`reveal the gist of the present invention that others can, by
`applying current knowledge, readily adapt it for various
`applications without omitting features that, from the stand-
`pointof priorart, fairly constitute essential characteristics of
`the generic or specific aspects of this invention.
`[0035] What is claimed as new anddesired to be protected
`by Letters Patent is set forth in the appended claims.
`
`1. An illumination device for a vehicle, comprising a
`plurality of semiconductor sources distributed in a matrix; at
`least one optical active element which is located in a path of
`rays of a light emitted by said semiconductor sources, said
`semiconductor sources are arranged in partial quantities in
`different defined partial regions of said matrix and said
`partial quantities of said semiconductor sources are operat-
`able independently from one another.
`2. Ao illumination device as defined in claim 1, wherein
`said at least one optical active elementis a collecting lens.
`3. An illumination device as defined in claim 1, wherein
`said partial quantities of
`said semiconductor
`sources
`
`

`

`US 2001/0019486 Al
`
`Sep. 6, 2001
`
`arrangedin said different definite partial regions are formed
`so that
`they emit
`lights of different colors, said partial
`quantities of said semiconductor sources are operatable for
`producing a predetermined colorof a light beam exiting the
`illumination device.
`4. An illumination device as defined in claim 1, wherein
`at least one of said partial regions of said matrix is formed
`so that said at semiconductor sources of said at least one
`partial region produce an asymmetrical low beam.
`5. An illumination device as defined in claim 1, wherein
`at least one of said partial regions of said matrix is formed
`so that said semiconductor sourcesofsaid at least one partial
`region produce a concentrated light beam.
`6. An illumination device as defined in claim 1, wherein
`at least one of said partial regions of said matrix is formed
`so that said semiconductor light sources of said at least one
`partial region produce a horizontally dispersed light beam.
`7. An illumination device as defined in claim 1, wherein
`at lcast onc partial region of said matrix is formed so that
`
`said semiconductorsourcesofsaid at least one partial region
`produce a light beam at an endside oriented to the right or
`to the left.
`8. An illumination device as defined in claim 1, wherein
`said semiconductor sources of said matrix are arranged in a
`distributed way over a concavely curved surface.
`9. An illumination device as defined in claim 1; and
`further comprising a screen arranged between said semicon-
`ductor sources and said at least one optically active element
`and operative for producing a bright-dark limit of a light
`beam exiting the illumination device.
`10. An illumination device as defined in claim 1, wherein
`said partial regions are formed so that a switching over of an
`operation of partial quantities of semiconductor sources of
`one of said regions to the operation of partial quantities of
`said semiconductor sources of another of said region is
`performed in a continuoustransition.
`*
`#
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