throbber
EV76C560
`1.3 Mpixels B&W and Color
`CMOS Image Sensor
`
`Datasheet
`Features
`• 1.3 million (1280 x 1024) pixels, 5.3 μm square pixels with micro-lens
`• Optical format 1/1.8"
`• 60 fps@ full resolution
`• Embedded functions:
`– Image Histograms and Context output
`– Sub-sampling / binning
`– Multi-ROI (including 1 line mode)
`– Defective pixel correction
`– PLL with 5 to 50 MHz input frequency range (compatible with dithered
`master clock)
`– High dynamic range capabilities
`– Time to Read improvement (Abort image and Good first image)
`• Timing modes:
`– Global shutter in serial and overlap modes
`– Rolling shutter allowing true CDS readout and global reset
`• Output format 8 or 10 bits parallel plus synchronization
`• SPI controls
`• Control input pins: Trigger, Reset
`• Light control output
`• 3.3 V and 1.8 V power supplies
`
`Performance Characteristics
`• Low power consumption (200 mW)
`• High sensitivity at low light level
`• Operating temperature [-30° to +65°C]
`• Peak QE > 60%
`
`Available Sensor Types
`• B&W
`• Color (Bayer arrangement)
`
`Applications
`• Surveillance IP/CCTV cameras
`• Industrial Machine Vision (Barcode reading)
`• Biometrics/Medical Imaging
`• Automotive Vision
`
`Introduction
`The EV76C560 is a 1.3 million pixel CMOS image sensor designed with e2v's proprietary Eye-On-Si CMOS imaging tech-
`nology. It is suitable for many different types of application where superior performance is required. The innovative pixel
`design offers excellent performance in low-light conditions with an electronic global (true snapshot) shutter, and offers a
`high readout speed at 60 fps in full resolution. Its very low power consumption makes it well suited for battery powered
`applications.
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`1
`
`

`

`1. Typical Performance Data
`
`Table 1-1.
`
`Typical electro-optical performance @ 25°C and 65°C, nominal pixel clock
`
`EV76C560
`
`Parameter
`
`Sensor
`characteristics
`
`Resolution
`
`Image size
`
`Pixel size (square)
`
`Aspect ratio
`
`Max frame rate
`
`Pixel rate
`
`Bit depth
`
`Dynamic range (1)
`
`Qsat
`
`SNR Max
`
`Pixel
`performance
`
`MTF at Nyquist, (cid:79)=550 nm
`Dark signal (2)
`DSNU(2)
`PRNU (3) (RMS)
`Responsivity(2) (4)
`
`Electrical
`interface
`
`Power supplies
`
`Power consumption:
`
` Functional (5)
`Standby
`
`Unit
`
`pixels
`
`mm
`inches
`
`μm
`
`fps
`
`Mpixels / s
`
`bits
`
`dB
`
`ke-
`
`dB
`
`%
`
`LSB10/s
`LSB10/s
`%
`
`LSB10/(Lux.s)
`V
`
`mW
`μW
`
`Typical value
`
`1280 (H) (cid:117) 1024 (V)
`
`6.9 (H) (cid:117) 5.5 (V) - 8.7 (diagonal)
`(cid:124) 1/1.8
`5.3 (cid:117) 5.3
`
`5 / 4
`
`60 @ full format
`
`90 -> 120
`
`@ TA 25°C
`>62
`
`41
`
`24
`
`6
`
`10
`
`12
`
`50
`
`@ TA 65°C
`>57
`
`39
`
`420
`
`116
`
`<1
`
`6600
`
`3.3 & 1.8
`
`< 200 mW
`180
`
`1.
`2.
`3.
`4.
`5.
`
`In electronic rolling shutter (ERS) mode.
`Min gain, 10 bits.
`Measured @ Vsat/2, min gain.
`3200K, window without AR coating, IR cutoff filter BG38 2 mm.
`@ 60 fps, full format, with 10 pF on each output.
`
`Figure 1-1.
`
`Spectral response and quantum efficiency
`
`2
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`2
`
`

`

`2. Sensor Overview
`
`Figure 2-1.
`(cid:3)
`
`Block diagram
`
`EV76C560
`
`D ATA_CLK
`
`FEN
`LEN
`
`FLO
`
`D EFE CT
`CO R RECT ION
`
`BIN NI NG
`
`10 t o 8 bits
`
`PATTERN
`GEN ER ATO R
`
`MATRIX
`U sefu l 1 280x
`10 24
`
`DECODER
`
`LINE
`
`A DC ( 10-BITS)
`
`PGA
`
`D ark correcti on
`
`CLAM P
`+
`DIGITAL
`GAINS
`
`C LK _AD C
`
`H IS TOGRA M
`
`S PI
`
`M UX OU T
`
`CONTEXT
`
`TIMING GE NER ATOR
`+
`POWER
`MAN AGEMEN T
`
`CLK _CTRL
`
`CL OCK GE NE RATOR
`
`PLL
`
`INT ERNAL
`OSCILLA TOR
`
`CLK_C HAIN
`
`D ATA<9 :0>
`
`A DC_REF_1
`
`A DC_REF_2
`
`CSN
`M ISO
`
`M OSI
`S CK
`TRIG
`RE SE TN
`
`CL K_FIX
`
`CLK _R EF
`
`Legen d:
`
`C LK_ADC domain
`
`CLK_C TR L do ma in
`
`CL K_ CHA IN dom ain
`
`Detailed descriptions of the I/O signals and blocks are given in the datasheet sections listed in Table 2-1
`See Section 21. for the device pinout information.
`
`Table 2-1.
`
`Quick reference table for block diagram
`
`Signal name
`
`I/O Description
`
`ADC_REF1&2
`
`CSN
`
`I
`
`I
`
`ADC reference voltages
`
`SPI chip select
`
`Reference
`
`Section 5.2
`
`List of blocks
`
`Matrix
`
`ADC + PGA
`
`Reference
`
`Section 4.
`
`Section 5.
`
`O
`
`SPI data output
`
`Clamp + digital gain
`
`Section 6. & 7.
`
`MISO
`
`MOSI
`
`SCK
`
`TRIG
`
`CLK_REF
`
`CLK_FIX
`
`RESETN
`
`DATA<9:0>
`
`FEN
`
`LEN
`
`FLO
`
`DATA_CLK
`
`I
`
`I
`
`I
`
`I
`
`I
`
`I
`
`O
`
`O
`
`O
`
`O
`
`O
`
`SPI data input
`
`SPI clock
`
`Trigger input
`
`Reference clock input
`
`Fixed clock input
`
`Sensor reset
`
`10-bit data output bus
`
`Section 17.
`
`Section 18.
`
`Section 14.
`
`Section 18.
`
`Defect correction
`
`Binning
`
`Histogram
`
`10->8 bits
`
`Context
`
`Mux out
`
`Timing and power management
`
`Vertical sync output
`
`Section 19.
`
`Clock generator
`
`Horizontal sync output
`
`Pattern generator
`
`Illumination control output
`
`Section 19.6
`
`SPI
`
`Output clock
`
`Section 8.
`
`Section 9.
`
`Section 10.
`
`Section 11.
`
`Section 12.
`
`Section 13.
`
`Section 14.
`
`Section 15.
`
`Section 16.
`
`Section 17.
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`3
`
`3
`
`

`

`EV76C560
`
`3. Standard Configuration
`
`3.1
`
`Sensor Settings
`The static configuration required to allow image capture is as follows:
`
`• All ground pins connected.
`• All power supply pins with the same name connected together.
`• SPI pins connected to the host controller.
`• 1.8 V pins and 3.3 V pins powered-on.
`• Input clock driving the CLK_REF input pin.
`• RESETN pin held at high level after the power-on sequence. See Section 18.1.1
`• STANDBY state is deactivated by writing 0 in the stdby_rqst bit in the <reg_ctrl_cfg> register. See
`Section 17.3.8
`• Image capture is triggered by a high level on the TRIG pin or setting the trig_rqst bit in the
`<reg_ctrl_cfg> register. See Section 17.3.8
`For improved performance, VDD33A and VDD18A must be noise-free. The best way to decouple
`VDD33A and to increase the power supply rejection ratio is to use a linear regulator dedicated to the
`image sensor. To prevent noise on VDD18A an inductor can be used.
`
`4
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`4
`
`

`

`3.2
`
`Application Information
`
`Figure 3-1. Required external components
`
`EV76C560
`
`It is recommended to use X7R for all the 100 nF capacitors.
`
`Reset pin has an internal pull-up.
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`5
`
`5
`
`

`

`3.3
`
`Electrical Levels
`
`Table 3-1.
`
`DC Characteristics @ 25°C
`
`EV76C560
`
`Min
`
`3.15
`
`1.6
`
`1.6
`
`Parameter
`
`Symbol
`
`Analog power supply relative to GND
`
`VDD33A
`
`Digital power supply relative to GND
`
`VDD18D
`
`Analog power supply relative to GND
`Power supply consumption (1)
`
`Supply current at 60 fps (VDD33A pin)
`
`Supply current at 60 fps (VDD18A pin)
`
`Supply current at 60 fps (VDD18D pin)
`
`VDD18A
`
`P
`
`IVDD33A
`IVDD18A
`IVDD18D
`
`Standby supply current on VDD33A
`pin
`
`Standby supply current on VDD18A
`pin
`
`Standby supply current on VDD18D
`pin (2)
`
`IDLE supply current on VDD33A pin
`
`IDLE supply current on VDD18A pin
`
`IDLE supply current on VDD18D pin
`
`IVDD33A(STBY)
`
`IVDD18A(STBY)
`
`IVDD18D(STBY)
`
`IVDD33A(IDLE)
`IVDD18A(IDLE)
`IVDD18D(IDLE)
`
`CMOS in/out
`
`Input voltage low level
`
`Input voltage high level
`Input pin capacitance (3)
`
`Output voltage low level
`
`Output voltage high level
`Output current @ VOH (4)
`Output current @ VOL(4)
`Input leakage current (5)
`ADC_REF current (6)
`
`VIL
`VIH
`CIN
`VOL1
`VOH1
`IOH
`IOL
`IL
`IADC_REF
`
`0.7 VDD18
`
`VDD18-0.55
`-10
`
`-1
`
`Value
`
`Typ
`
`3.3
`
`1.8
`
`1.8
`
`190
`
`20
`
`25
`
`30
`
`0
`
`0
`
`50
`
`6
`
`0
`
`7
`
`4
`
`100
`
`Max
`
`3.45
`
`2
`
`2
`
`100
`
`0.3 VDD18
`
`0.55
`
`10
`
`1
`
`Unit
`
`V
`
`V
`
`V
`
`mW
`
`mA
`
`mA
`
`mA
`
`μA
`
`mA
`
`mA
`
`mA
`
`V
`
`V
`
`pF
`
`V
`
`V
`
`mA
`
`mA
`
`μA
`
`μA
`
`1.
`2.
`3.
`4.
`5.
`6.
`
`Digital output loads =10 pF
`IVDD18D(STDBY) with SPI on, without communication and without CLK_REF input.
`CLCC48 package
`On all output pins
`On all digital input pins
`On ADC_REF pins
`
`6
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`6
`
`

`

`EV76C560
`
`4. Matrix
`
`4.1
`
`Useful Area Definition
`The useful area is 1280 (cid:117) 1024 pixels as shown in Figure 4-1.
`
`19 optically shielded reference lines to allow the black level adjustment.
`
`6 dummy illuminated pixels surround the useful area.
`
`max with dummy = 1036
`
`Minimum offset in column = 0
`Minimum offset in line = 0
`
`FEN
`
`19 reference lines
`
`(0,0)
`
`(6,6)
`
`USEFUL 1280 x 1024
`
`(1285,1029)
`
`(1291,1035)
`
`Max with dummy = 1292
`
`First pixel out
`
`Horizontal active pixels
`Number depending on binning & sub-sampling
`
`Figure 4-1.
`
`Area description
`
`First line out
`
`Vertical active lines
`
`Depending on binning &
`
`sub-sampling
`
`Time
`
`Len
`
`D (9 :0)
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`7
`
`7
`
`

`

`EV76C560
`
`4.2
`
`CFA (Color Filter Array)
`The following CFA types are implemented:
`
`• Monochrome
`• RGB Bayer filter
`Other types are available on request.
`
`As CFA choice does not implied a silicon hardware change but only post-process, to allow good choice
`of binning, subsampling models and color gains use the sensor must be configured by setting 1 in
`color_en when a color sensor is used. Note that image size depends on this factor. See Section 4.5.3.1.
`
`Table 4-1.
`
`Color of first pixel using the flip functions (depends on H&V offset parities)
`
`RoiX_0l_1 / RoiX_0c_1
`
`Flip H
`
`Flip V
`
`Odd/Odd
`
`Odd/Even
`
`Even/odd
`
`Even/Even
`
`N
`
`N
`
`O
`
`O
`
`N
`
`O
`
`N
`
`O
`
`Red
`
`Green Red
`
`Green Blue
`
`Blue
`
`Green Blue
`
`Green Red
`
`Blue
`
`Red
`
`Red
`
`Blue
`
`Green Red
`
`Green Blue
`
`Blue
`
`Green Blue
`
`Green Red
`
`Red
`
`RoiX_0l stands for ROI1_0l_1, Roi2_0l_1, Roi3_0l_1 & Roi4_0l_1. See Section 17.3.11, 17.3.12,
`17.3.13, and 17.3.14 respect
`
`RoiX_0c stands for Roi1_0c_1, Roi2_0c_1, Roi3_0c_1 & Roi4_0c_1. Section 17.3.11, 17.3.12, 17.3.13,
`and 17.3.14 respectively
`
`It is recommended to keep:
`
`• Roi_W_1 + Roi_0c_2 even
`• Roi_h_1 + Roi_0l_2 even
`Flip H & Flip V are under roi_flip_h & roi_flip_v control. See <reg_miscel2> in Section 17.3.4
`
`4.3
`
`Pixels
`
`The matrix is composed of five transistor (5T) pixels. This structure supports either global shutter (GS)
`mode or electronic rolling shutter (ERS) mode (Section 18.2).
`
`4.4
`
`Lens CRA (Chief Ray Angle) compensation.
`In order to better focus the light rays on the photodiode, the EV76C560 micro lenses are radially shifted
`to match the exit angles due to the external application lens. This results in improved efficiency and
`reduced corner shading.
`This shift is linearly applied from center (0 shift) to corner ((cid:68)(cid:3)angle).
`
`8
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`8
`
`

`

`EV76C560
`
`(cid:68) is the corner CRA (Chief Ray Angle) defined as a mean value of the telecentricity of optics lenses that
`would be used with the sensor.
`
`The sensor, optimized for a corner CRA of 12°, can be used with a range of telecentricity from 5°
`to 20° (estimated for fnumber f#/1.2).
`
`Figure 4-2. Microlens Shifting
`
`(cid:68)(cid:3)
`
`MICROLENS
`
`Photodiode
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`9
`
`9
`
`

`

`Figure 4-3.
`
`Lens CRA overview
`
`EV76C560
`
`Photodiode
`Microlens
`
`10
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`10
`
`

`

`EV76C560
`
`4.5
`
`Region Of Interest (ROI)
`
`4.5.1
`
`Flip Functions
`Flip functions are available to allow the application to use any type of lens (with or without mirror). The
`flip functions are controlled by programming the roi_flip_h and roi_flip_v bitfields in the <reg_miscel2>
`register. See Section 17.3.4. The ROI is applied on the flipped image.
`
`The shielded lines for dark reference are always read first (except in expanded ROI mode selected by
`the roi_expanded bit in the <reg_miscel2> register (see Section 17.3.4) when whole lines may be read.
`
`Figure 4-4.
`
`Flip effects
`
`NO FLIP
`
`FLIP H
`
`FLIP H&V
`
`FLIP V
`
`ROI
`
`4.5.2
`
`ROI Definition
`All ROIs are defined in relation to the matrix and useful pixel area (as shown in Figure 4-1). The ROIs are
`defined before sub-sampling, defect correction and binning.
`
`If a flip effect is used, ROI selection is done after the flip.
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`11
`
`11
`
`

`

`EV76C560
`
`4.5.3
`
`Sub-Sampling and Windowing
`• The sub-sampling function causes the sensor to read only 8 pixels over the selected factor. For
`example, a sub-sampling factor of 8 over 16 means that the sub-sampling ratio is 1:2. For color
`sensors, the algorithm is more complicated due to the Bayer organization.
`Sub-sampling is programmable with a ratio 1 to 32 in steps of 0.125. Different sub-sampling factors
`can be defined for horizontal and vertical directions. They are programmable using SPI commands:
`roiX_subs_v and roiX_subs_h in <reg_roiX*> (where X* is the number of the ROI 1, 2, 3 or 4
`registers group) see Section 17.3.11, 17.3.12, 17.3.13, and 17.3.14 respectively.
`• Windowing defines the size and position of the ROI. Windowing is defined in two dimensions:
`horizontal and vertical. The minimum width of the window is 16 columns and the minimum height is 1
`line. The user has to define the height, width and offsets of the ROI through the SPI control bus for
`each ROI used. (See Section 4.5.4).
`Windowing, sub-sampling and then binning are possible on the same image.
`
`Figure 4-5. Combination of windowing, sub-sampling and binning example for a B&W image.
`With Binning
`Sub-sampling
`
`ROI
`
`Useful Area
`Full Area
`
`Without Binning
`
`Figure 4-6.
`
`Sub-sampling example
`
`1 2 3
`
`987654
`
`10
`
`11
`
`12 13 14
`
`15
`
`16
`
`17
`
`18
`
`19
`
`20
`
`21
`
`22
`
`23 24 25
`
`26
`
`27
`
`28
`
`29
`
`30
`
`31
`
`32
`
`1 2 3
`
`654
`
`987
`
`With an 8/30 sub-sampling factor only these pixels (or lines) will be read:
`
`• On the first group of 30 pixels: 1, 4, 8, 12, 16, 19, 23, 27
`• On the second group of 30 pixels: 31, 34, 38…
`• On the third group of 30 pixels: 61…
`Roughly, the sub-sampled image format will be multiplied by 8/30=1/3.75. For more precise calculation
`of the output image size the following formulas must be used.
`
`12
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`12
`
`

`

`4.5.3.1
`
`Calculating the Image Output Size
`Image output sizes are determined by the following equations depending on:
`
`EV76C560
`
`• B&W or color version (color_en in <reg_miscel2> see Section 17.3.4,
`• Sub-sampling factor (roiN_subs_v and roiN_subs_h in <reg_roiN*> see Section 17.3.11, 17.3.12,
`17.3.13, and 17.3.14 respectively),
`• Defect correction activation (roi_ddc_en in <reg_chain_cfg> see Section 17.3.7 ),
`• Binning activation (roiN_binning_en in <reg_chain_cfg> see Section 17.3.7.
`If roiN_binning_en = 0 AND color_en = 0
`
`For ROI 1:
`
`ROI_width = INT
`
`8 (cid:117) roi1_w_1
`roi1_subs_factor + 8
`
`+ INT
`
`8 (cid:117) roi1_w_2
`roi1_subs_factor + 8
`
`For ROI 2, 3 and 4:
`
`ROI_width = INT
`
`8 (cid:117) roiN_w
`roiN_subs_factor + 8
`
`If (roiN_binning_en = 1 AND color_en = 0) OR (roiN_binning_en = 0 AND color_en = 1)
`
`For ROI 1:
`
`ROI_width = 2 (cid:117)(cid:3)
`
`INT
`
`4 (cid:117) roi1_w_1
`roi1_subs_factor + 8
`
`+ INT
`
`4 (cid:117) roi1_w_2
`roi1_subs_factor + 8
`
`For ROI 2, 3 and 4:
`
`ROI_width = 2 (cid:117)(cid:3)INT
`
`4 (cid:117) roiN_w
`roiN_subs_factor + 8
`
`If roiN_binning_en = 1 AND color_en = 1
`
`For ROI 1:
`
`ROI_width = 4 (cid:117)(cid:3)
`
`INT
`
`2 (cid:117) roi1_w_1
`roi1_subs_factor + 8
`
`+ INT
`
`2 (cid:117) roi1_w_2
`roi1_subs_factor + 8
`
`For ROI 2, 3 and 4:
`
`ROI_width= 4 (cid:117)(cid:3)INT
`
`2 (cid:117) roiN_w
`roiN_subs_factor + 8
`
`Then, width_out is:
`
`width_out = ROI_width – 4 (cid:117)(cid:3)ddc_en
`2roiN_binning_en
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`13
`
`13
`
`

`

`EV76C560
`
`If roiN_binning_en = 0 AND color_en = 0
`
`For ROI 1
`
`ROI_height = INT
`
`8 (cid:117) roi1_h_1
`roi1_subs_factor + 8
`
`+ INT
`
`8 (cid:117) roi1_h_2
`roi1_subs_factor + 8
`
`For ROI 2, 3 and 4:
`
`ROI_height = INT
`
`8 (cid:117) roiN_h
`roiN_subs_factor + 8
`
`If (roiN_binning_en = 1 AND color_en = 0) OR (roiN_binning_en = 0 AND color_en = 1)
`
`For ROI 1
`
`ROI_height = 2 (cid:117)(cid:3)
`
`INT
`
`4 (cid:117) roi1_h_1
`roi1_subs_factor + 8
`
`+ INT
`
`4 (cid:117) roi1_h_2
`roi1_subs_factor + 8
`
`For ROI 2, 3 and 4:
`
`ROI_height = 2 (cid:117)(cid:3)
`INT
`
`4 (cid:117) roiN_h
`roiN_subs_factor + 8
`
`If roiN_binning_en = 1 AND color_en = 1
`
`For ROI 1:
`
`ROI_height = 4 (cid:117)(cid:3)
`
`INT
`
`2 (cid:117) roi1_h_1
`roi1_subs_factor + 8
`
`+ INT
`
`2 (cid:117) roi1_h_2
`roi1_subs_factor + 8
`
`For ROI 2, 3 and 4:
`
`ROI_height = 4 (cid:117)(cid:3)
`
`INT
`
`2 (cid:117) roiN_h
`roiN_subs_factor + 8
`
`Then, height_out is:
`height_out = ROI_height – 4 (cid:117)(cid:3)ddc_en
`2roiN_binning_en
`
`Notes:
`
`• INT( ) takes the integer part of the division result.
`• N stands for ROI index (1, 2, 3 or 4).
`• If defect correction is active, the minimum ROI size is 5; defect correction must be disabled for smaller
`ROI size.
`
`14
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`14
`
`

`

`EV76C560
`
`4.5.4
`
`Multi-ROI
`The multi-ROI offers two different and separate modes:
`
`• MIMR (Multiple Integration Multiple ROI) mode allows the user to define an acquisition cycle
`comprising 1 to 4 ROI cycle(s) (see roi_max_id in <reg_chain_cfg> in Section 17.3.7).
`• SIMR (Single Integration Multiple ROI) mode acts on the first ROI of the multi-ROI cycle only,
`allows 1, 2 or 4 areas of interest to be acquired within the same integrated image. In SIMR mode, the
`sensor outputs only the configured zones and concatenates them to form a single image (see Section
`4.5.4.2).
`Each ROI has its own specific parameters (see Table 4-2) and parameters that are common to all ROIs
`(see Table 4-3).
`
`Table 4-2.
`
`ROI-specific parameters
`
`Parameter
`
`Description
`
`ROI1
`
`ROI2
`
`ROI3
`
`ROI4
`
`Register bitfield names
`
`ROI
`Configuration
`
`Defines the ROI
`dimensions and
`position in the
`total field of view.
`
`For each ROI two
`integration times
`have to be
`defined, one in
`number of lines
`and one in sub-
`line times.
`
`Integration
`times
`
`Analog and
`digital gains
`
`Vertical and
`horizontal
`sub-sampling
`factors
`
`roi1_0l_1
`roi1_h_1
`roi1_0c_1
`roi1_w_1
`roi1_0l_2
`roi1_h_2
`roi1_0c_2
`roi1_w_2
`in <reg_roi1*>,
`see Section
`17.3.11
`
`roi1_t_int_ll
`roi1_t_int_clk
`in <reg_roi1*>,
`see Section
`17.3.11
`
`roi2_0l_1
`roi2_h_1
`roi2_0c_1
`roi2_w_1
`in <reg_roi2*>,
`see Section
`17.3.12
`
`roi3_0l_1
`roi3_h_1
`roi3_0c_1
`roi3_w_1
`in <reg_roi3*>,
`see Section
`17.3.13
`
`roi4_0l_1
`roi4_h_1
`roi4_0c_1
`roi4_w_1
`in <reg_roi4*>,
`see Section
`17.3.14
`
`roi2_t_int_ll
`roi2_t_int_clk
`in <reg_roi2*>,
`see Section
`17.3.12
`
`roi3_t_int_ll
`roi3_t_int_clk
`in <reg_roi3*>,
`see Section
`17.3.13
`
`roi4_t_int_ll
`roi4_t_int_clk
`in <reg_roi4*>,
`see Section
`17.3.14
`
`roi1_ana_gain
`roi1_dig_gain in
`<reg_roi1*>, see
`Section 17.3.11
`
`roi2_ana_gain
`roi2_dig_gain in
`<reg_roi2*>, see
`Section 17.3.12
`
`roi3_ana_gain
`roi3_dig_gain in
`<reg_roi3*>, see
`Section 17.3.13
`
`roi4_ana_gain
`roi4_dig_gain in
`<reg_roi4*>, see
`Section 17.3.14
`
`roi1_subs_v
`roi1_subs_h
`in <reg_roi1*>,
`see Section
`17.3.11
`
`roi2_subs_v
`roi2_subs_h
`in <reg_roi2*>,
`see Section
`17.3.12
`
`roi3_subs_v
`roi3_subs_h
`in <reg_roi3*>,
`see Section
`17.3.13
`
`roi4_subs_v
`roi4_subs_h
`in <reg_roi4*>,
`see Section
`17.3.14
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`15
`
`15
`
`

`

`EV76C560
`
`Table 4-2.
`
`ROI-specific parameters (Continued)
`
`Parameter
`
`Description
`
`ROI1
`
`ROI2
`
`ROI3
`
`ROI4
`
`Register bitfield names
`
`Binning
`factor
`
`Repetition
`count
`
`Wait time
`
`Binning is
`performed after
`the sub-sampling
`if this is used.
`Each ROI can
`have its own
`binning factor.
`See Section 9.
`
`Each ROI will be
`repeated several
`times before
`reading the next
`ROI.
`
`Wait time after the
`end of the last
`ROI repetition
`(see Figure 4-7
`Multi-ROI cycle).
`
`roi1_binning_en
`in
`<reg_chain_cfg>,
`see Section 17.3.7
`
`roi2_binning_en
`in
`<reg_chain_cfg>,
`see Section 17.3.7
`
`roi3_binning_en
`in
`<reg_chain_cfg>,
`see Section 17.3.7
`
`roi4_binning_en
`in
`<reg_chain_cfg>,
`see Section 17.3.7
`
`roi1_rep_nb
`in <reg_roi1*>,
`see Section
`17.3.11
`
`roi2_rep_nb
`in <reg_roi2*>,
`see Section
`17.3.12
`
`roi3_rep_nb
`in <reg_roi3*>,
`see Section
`17.3.13
`
`roi4_rep_nb
`in <reg_roi4*>,
`see Section
`17.3.14
`
`roi1_t_wait_ext
`in <reg_roi1*>,
`see Section
`17.3.11
`
`roi2_t_wait_ext
`in <reg_roi2*>,
`see Section
`17.3.12
`
`roi3_t_wait_ext
`in <reg_roi3*>,
`see Section
`17.3.13
`
`roi4_t_wait_ext
`in <reg_roi4*>,
`see Section
`17.3.14
`
`All the used ROIs use these common parameters:
`
`Table 4-3.
`
`ROI common parameters
`
`Parameter
`
`Description
`
`The binning result may be divided by 1, 2 or 4 to
`either keep the maximum amount of information
`or reduce the noise.
`(see Figure 4-4: Flip effect)
`
`Depends on MIMR, SIMR or High dynamic
`configuration. See Section 4.5.4.1, Section
`4.5.4.2 and Section 4.5.4.3
`
`Binning factor divider
`
`Flip configuration
`
`Readout mode
`
`Digital color gains (For
`color sensor)
`
`Wait time at the end of
`each frame
`
`Line length
`
`Clamp configuration and
`offsets
`
`16
`
`1005B–IMAGE–11/10/11
`
`Register bitfield names
`
`binning_div_factor in <reg_chain_cfg>,
`see Section 17.3.7
`
`roi_flip_h and roi_flip_v in
`<reg_miscel2>, see Section 17.3.4
`
`roi_readout_mode , see Section 17.3.8
`
`gb_dig_gain; gr_dig_gain; in
`<reg_dig_gain_gb_gr>, see Section 17.3.16
`b_dig_gain; r_dig_gain in
`<reg_dig_gain_b_r>, see Section 17.3.15
`
`roi_t_wait, see Section 17.3.10
`
`line_length, see Section 17.3.1
`
`e2v semiconductors SAS 2011
`
`16
`
`

`

`4.5.4.1
`
`Multiple Integration (MIMR) Mode Configuration
`
`Figure 4-7. Multi-ROI cycle in MIMR mode
`
`(cid:3)
`
`EV76C560
`
`ROI 1
`
`x N1
`
`Wait 1
`
`ROI 2
`
`x N2
`
`1 ROI
`
`MIMR cycle using
` 1 to 4 ROI
`
`Wait 2
`
`2 ROI
`
`Wait 4
`
`ROI 4
`
`x N4
`
`Wait 3
`
`ROI 3
`
`x N3
`
`4 ROI
`
`3 RO I
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`17
`
`17
`
`

`

`EV76C560
`
`4.5.4.2
`
`Single Integration (SIMR) Mode Configuration
`
`Figure 4-8.
`
`SIMR parameters
`
`roi1_0c_1
`roi1_w_1
`
`roi1_w_2 =0
`
`roi1_0c_1
`roi1_w_1
`
`roi1_0c_2
`roi1_w_2
`
`roi1_0l_1
`
`roi1_h_1
`
`roi_1_1
`
`roi_1_1
`
`roi_1_2
`
`1 ROI
`
`2 ROI
`
`roi1_h_2=0
`
`roi1_0l_1
`
`roi1_h_1
`
`roi1_0l_2
`
`roi_1_1
`
`roi_1_1
`
`roi_1_2
`
`roi1_h_2
`
`roi_2_1
`
`2 ROI
`
`roi_2_1
`
`roi_2_2
`
`4 ROI
`
`All the ROI 1 registers are described in Section 17.3.11.
`
`• If the ROI_1_2 width and ROI_2_1 height are null, only ROI_1_1 is read. The user has to choose:
`– ROI_1_1 horizontal (roi1_0c_1) and vertical (roi1_0l_1) offsets.
`– ROI_1_1 horizontal (roi1_w_1) and vertical (roi1_h_1) dimensions.
`• If the ROI_1_2 width is greater than 0 and ROI_2_1 height is null, only ROI_1_1 and ROI_1_2 are
`read. The user has to choose:
`– ROI_1_1 horizontal (roi1_0c_1) and vertical (roi1_0l_1) offsets.
`– ROI_1_1 horizontal (roi1_w_1) and vertical (roi1_h_1) dimensions.
`– ROI_1_2 horizontal (roi1_0c_2) offset. (ROI_1_2 vertical offset = ROI_1_1).
`– Horizontal (roi1_w_2) width (ROI_1_2 height = ROI_1_1).
`• If the ROI_1_2 width is null and ROI_2_1 height is greater than 0, only ROI_1_1 and ROI_2_1 are
`read. The user has to choose:
`– ROI_1_1 horizontal (roi1_0c_1) and vertical (roi1_0l_1) offsets.
`– ROI_1_1 horizontal (roi1_w_1) and vertical (roi1_h_1) dimensions.
`– ROI_2_1 vertical (roi1_0l_2) offset. (ROI_2_1 horizontal offset = ROI_1_1).
`
`18
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`18
`
`

`

`EV76C560
`
`– ROI_2_1 height (roi1_h_2) (ROI_2_1 width is the same as ROI_1_1).
`• If the ROI_1_2 width and ROI_2_1 height are greater than 0, then 4 ROI_1_1, ROI_2_1, ROI_1_2
`and ROI_2_2 are read. The user has to choose:
`– ROI_1_1 horizontal (roi1_0c_1) and vertical (roi1_0l_1) offsets.
`– ROI_1_1 horizontal (roi1_w_1) and vertical (roi1_h_1) dimensions.
`– ROI_2_1 ROI_2_2 vertical (roi1_0l_2) offset and (roi1_h_1) height.
`– ROI_1_2 horizontal (roi1_0c_2) offset and (roi1_w_2) width.
`
`Figure 4-9. ROI output for the "4 ROI" configuration
`
`When using the defect correction (roi_ddc_en = 1) there is:
`
`• A 4-column (or 2 if binning function is enabled) black border between ROI_1_1 and ROI_1_3 and
`ROI_1_2 and ROI_1_4.
`• A 4-line (or 2 if binning function is enabled) black border between ROI_1_1 and ROI_1_2 and
`ROI_1_3 and ROI_1_4.
`
`4.5.4.3
`
`High Dynamic Range Configuration
`A special MIMR configuration using two integration times can be used to provide high dynamic images.
`
`The first integration time image followed by a second integration image are combined without any image
`loss. For example:
`
`• Image 1 with a short integration time
`• Image 2 with N time longer integration time
`• A computed image may be calculated by summing image 2 + [image 1 with each of its pixel values
`multiplied by N]
`Note that due to the 60 fps maximum frame rate a true 30 fps output can be achieved.
`
`In this mode only two ROIs are used. They must have the same:
`
`• Position and dimensions.
`• Binning
`• Sub-sampling factor
`• Repetition factor (=1)
`• ROI mode (SIMR must not be used)
`To prevent motion distortion it is recommended to perform the short integration time first.
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`19
`
`19
`
`

`

`EV76C560
`
`Figure 4-10. Dual integration time mode for high dynamic
`High dynamic image
`
`Integration 1
`
`Readout 1
`
`Integration 2 Readout 2
`
`Integration 3
`
`Readout 3
`
`In GS
`
`Integration 1
`
`Readout 1
`
`Integration 2 Readout 2
`
`In ERS
`
`Time
`
`20
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`20
`
`

`

`EV76C560
`
`5. 10-Bit ADC
`
`5.1
`
`Analog Gain
`Digital conversion is done by a high speed 10-bit column ADC. All the pixel values of the same line are
`converted in parallel.
`
`The analog gain is done by a slope adjustment. There are 8 available values. These values are program-
`mable via SPI. Each ROI has its own analog gain:
`
`• roi1_ana_gain in <reg_roi1*> for ROI 1 (see Section 17.3.11)
`• roi2_ana_gain in <reg_roi2*> for ROI 2 (see Section 17.3.12)
`• roi3_ana_gain in <reg_roi3*> for ROI 3 (see Section 17.3.13)
`• roi4_ana_gain in <reg_roi4*> for ROI 4 (see Section 17.3.14)
`
`Figure 5-1.
`
`Principle of the column ADC
`
`Counter +
`Slope
`
`Column 1
`Conversion
`
`Column 2
`Conversion
`
`Column 3
`Conversion
`
`Column N
`Conversion
`
`ADC schematic diagram
`
`10
`
`10
`
`Latch
`
`RAM
`
`R
`
`W
`
`Reset
`l
`l
`
`+ -
`
`COM
`
`Signal
`
`10
`
`S/H
`
`Pixel
`
`Pixel
`
`10 bits
`
`Figure 5-2.
`(cid:3)
`
`A DC_CLK
`
`Start slope
`
`Slope
`Generator
`
`Reset
`
`Write
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`21
`
`21
`
`

`

`EV76C560
`
`5.2
`
`External Resistor Choice
`The ADC gain value is set through an external resistor connected between ADC_REF_1 and
`ADC_REF_2 pins. An internal protection against a short circuit between these two pins is included in the
`design.
`
`REXT =
`
`K
`CLK_ADC
`
`– 80
`
`where K = 1.94 (cid:117) 1012, CLK_ADC is in Hertz and REXT is in Ohms.
`With a 114 MHz ADC clock, the resistor value is 16.9 k(cid:58)(cid:17)
`
`5.3
`
`Analog Gain Tolerances
`
`Table 5-1.
`
`ADC gain tolerances
`
`1
`
`89.09
`
`Precision
`
`1.5
`
`59.09
`
`0.5%
`
`2
`
`44.18
`
`1%
`
`3
`
`29.64
`
`1%
`
`4
`
`22.30
`
`1%
`
`6
`
`14.90
`
`1
`
`8
`
`11.27
`
`2%
`
`6. Clamp and Offset Adjustment
`The purpose of the automatic black level adjustment function (or clamp) is to cancel:
`
`• The offset due to pixel dark current (offset variable with temperature and integration time).
`• The analog chain offset (mainly due to comparator offset).
`The black level adjustment is active up to 65 °C with 200 ms integration time.
`
`Black level adjustment can be automatic or manual. This is selected by the clamp_auto_en bit in the
`<reg_miscel2> register. See Section 17.3.4
`
`In order to compensate possible differences in dark current generation between masked pixels and use-
`ful pixels, the automatic black level correction works as follows:
`
`22
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`22
`
`

`

`Figure 6-1. Clamp principle
`
`Measurement of shielded pixel
`black level @ Tint = tint image
`
`Pixel level
`
`EV76C560
`
`2
`
`3
`
`Slope=
`Dark signal of
`shielded pixels
`
`Slope =
`Dark signal of
`useful pixels
`
`Black level of shielded
`pixels at Tint = 0
`
`Electronic offset does
`not depend on Tint
`
`1
`
`0
`
`ESTIMATED black level of useful pixels
` @ Tint = Tint image
`
`Tint
`
`Tint image
`
`For each frame acquisition:
`
`1. A first measurement is taken on a shielded pixel with a very short integration time (fixed to the
`minimum possible time) to determine the hardware offset of the acquisition chain (chain_offset).
`2. A second measurement is taken to determine the dark signal mean value of a shielded pixel for
`the configured integration time (shld_pix_level).
`3. The dark signal of a useful pixel is deduced from these 2 measurements and from the ratio
`between useful and shielded pixels (V0_ratio). This ratio is configurable via the v0_gain bit field
`in the <reg_clamp_cfg> register. See Section 17.3.18.
`
`Useful dark signal = (shielded pixel level - chain offset) (cid:117) V0_ratio + chain offset
`
`A lock mechanism guarantees a constant correction offset as long as the difference between the new
`correction offset and the current correction is less than a threshold configurable by clamp_lock_th in
`<reg_clamp_cfg> see Section 17.3.18. This mechanism is necessary to ensure offset stability during a
`video stream. It can be bypassed using clamp_lock_en in <reg_clamp_cfg>, see Section 17.3.18.
`
`Offset can be adjusted using either clamp_add_offset (if clamp_auto_en = '1' in <reg_miscel2>) or
`clamp_manual_offset (if clamp_auto_en = '0' in <reg_miscel2>) in <reg_clamp_offset>, see Section
`17.3.17.
`
`The flag_dig_cor flag in the <fb_status> register indicates if a digital correction is needed or not, see
`Section 17.3.23.
`
`If the analog correction allowed by <max_offset> is saturated, a digital correction can be activated by
`setting <dig_cor_en>.
`
`If <dig_cor_en> = 1 and analog offset is saturated, then the maximum data output level will be limited.
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`23
`
`23
`
`

`

`Digital and analog offsets are output in two feedback bitfields fb_ana_offset and fb_dig_offset in
`<fb_clamp>, see Section 17.3.22.
`
`EV76C560
`
`Figure 6-2. Clamp algorithm
`
`If clamp_auto_en = 0
`
`Yes
`
` No
`
`Compute new_offset
`
`Select current_offset according to ROI id
`
`No
`
`If |new_offset -
`current_offset| >
`clamp_lock_th
` Or
`If clamp_lock_en = 0
`
` Yes
`current_offset = new_offset
`
`If current_offset >
`max_offset
`
` No
`ana_offset = current_offset
`flag_dig_cor = 0
`
`current_offset = clamp_manual_offset
`
`Yes
`
`Yes
`
`ana_offset_po = clamp_max_offset
`flag_dig_cor = 1
`
`If dig_cor_en = 0
`
` No
`
`dig_offset = 0
`
`dig_offset = current_offset - ana_offset
`
`24
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`24
`
`

`

`EV76C560
`
`7. Digital Gain
`This block applies one global gain followed by four digital gains (for the Bayer or WRGB CFA structures)
`configurable by 8-bit SPI registers.
`
`In B&W products, only the global gain is used.
`
`To allow good precision with low gains the 8-bits for programming the digital gain are used as follows:
`
`• The 2 MSB are used for precision P
`• The 6 LSB are used to control the gain G (from 0 to 63)
`• The ROIX digital gains (roiX_dig_gain) follow this rule:
`
`Gain = 2P (cid:117) 1 +
`
`G
`64
`• For P=0 Gain varies from 1 to 1.98 in steps of 0.015
`• For P=1 Gain varies from 2 to 3.97 in steps of 0.031
`• For P=2 Gain varies from 4 to 7.94 in steps of 0.062
`• For P=3 Gain varies from 8 to 15.88 in steps of 0.125
`In color products, the four digital gains can be used to balance the four color channels (blue, green blue,
`green red and red):
`
`• The 2 MSB are used for precision P
`• The 6 LSB are used to control the gain G (from 0 to 63)
`• The four digital color gains (gb_dig_gain; gr_dig_gain; b_dig_gain; r_dig_gain) follow this rule:
`
`Gain = 2P –2(cid:3)(cid:117) 1 +
`
`G
`64
`
`• For P=0 Gain varies from 0.25 to 0.5 in steps of 0.004
`• For P=1 Gain varies from 0.5 to 0.99 in steps of 0.008
`• For P=2 Gain varies from 1 to 1.98 in steps of 0.016
`• For P=3 Gain varies from 2 to 3.97 in steps of 0.0.31
`
`8. Defective Pixel Correction
`A multidirectional 3x3 median filter (with maximal weighting) is implemented and can be enabled by pro-
`gramming roi_ddc_en in < reg_chain_cfg >. See Section 17.3.7.
`
`This filter is compatible with B&W and color products (Bayer or WRGB). All pixels of the ROI are cor-
`rected; this correction deletes 2 pixels all around the input picture so the ROI output is reduced by 2
`pixels in each line and column. See Section 4.5.3.
`
`e2v semiconductors SAS 2011
`
`1005B–IMAGE–11/10/11
`
`25
`
`25
`
`

`

`EV76C560
`
`P
`i
`
`4
`
`(cid:166)(cid:32)
`
`i
`
`1
`
`(cid:32)
`
`1
`k
`
`P T
`
`bin
`
`he k parameter, see binning_div_factor ,
`allows dividing the sum by 1, 2 or 4.
`
`X
`
`i
`
`4
`
`(cid:166)(cid:32)
`
`i
`
`1
`
`X
`
`bin
`
`(cid:32)
`
`1
`k
`
`With X = B, Gb, Gr or R.
`
`The k parameter, see binning_div_factor,
`allows dividing the sum by 1, 2 or 4.
`
`The binning respects the Bayer pattern to add
`only the same color pixels.
`
`9. Binning
`
`Two binning 2x2 modes are implemented:
`
`Figure 9-1.
`
`B&W binning (color_en=0)
`
`P1 P2
`
`P3
`
`P4
`
`Pbin
`
`Figure 9-2. Color binning (color_en=1)
`
`R1
`
`Gb1
`
`R3
`
`Gb3
`
`Gr1
`1
`B1
`
`Gr3
`1
`B3
`
`R2
`
`Gb2
`
`R4
`
`Gb4
`
`Gr2
`1
`B2
`
`Gr4
`1
`B4
`
`Rbin Grbin
`1
`Gbbin Bbin
`
`When k= 4 (cid:198) Average by 4 (cid:198) Saturation remains the same and noise on the image is reduced by a fac-
`tor 2.
`
`When k=2 or 1, the sum is clipped at the value 1023.
`
`The dimensions of the binning output image are half the input image dimensions.
`
`26
`
`1005B–IMAGE–11/10/11
`
`e2v semiconductors SAS 2011
`
`26
`
`

`

`EV76C560
`
`10. Histograms
`Four histograms can be computed (for color sensors):
`
`• The first one with green blue pixels
`• The second one with red pixels
`• The third one with blue pixels
`• The fourth one with green red pixels
`To enable histogram calculation

This document is available on Docket Alarm but you must sign up to view it.


Or .

Accessing this document will incur an additional charge of $.

After purchase, you can access this document again without charge.

Accept $ Charge
throbber

Still Working On It

This document is taking longer than usual to download. This can happen if we need to contact the court directly to obtain the document and their servers are running slowly.

Give it another minute or two to complete, and then try the refresh button.

throbber

A few More Minutes ... Still Working

It can take up to 5 minutes for us to download a document if the court servers are running slowly.

Thank you for your continued patience.

This document could not be displayed.

We could not find this document within its docket. Please go back to the docket page and check the link. If that does not work, go back to the docket and refresh it to pull the newest information.

Your account does not support viewing this document.

You need a Paid Account to view this document. Click here to change your account type.

Your account does not support viewing this document.

Set your membership status to view this document.

With a Docket Alarm membership, you'll get a whole lot more, including:

  • Up-to-date information for this case.
  • Email alerts whenever there is an update.
  • Full text search for other cases.
  • Get email alerts whenever a new case matches your search.

Become a Member

One Moment Please

The filing “” is large (MB) and is being downloaded.

Please refresh this page in a few minutes to see if the filing has been downloaded. The filing will also be emailed to you when the download completes.

Your document is on its way!

If you do not receive the document in five minutes, contact support at support@docketalarm.com.

Sealed Document

We are unable to display this document, it may be under a court ordered seal.

If you have proper credentials to access the file, you may proceed directly to the court's system using your government issued username and password.


Access Government Site

We are redirecting you
to a mobile optimized page.





Document Unreadable or Corrupt

Refresh this Document
Go to the Docket

We are unable to display this document.

Refresh this Document
Go to the Docket