Curriculum Vitae: E. Fred Schubert
`
`Curriculum Vitae: E. Fred Schubert
`
`Contact information
`Department of Electrical, Computer, and Systems Engineering
`Rensselaer Polytechnic Institute
`110 Eighth Street, Troy, NY 12180
`Telephone 518-276-8775 (office); Cell phone 518-253-3762
`Email: EFSchubert@rpi.edu Homepage: http://www.rpi.edu/~schubert
`
`Citizenship
`Born in Stuttgart, Germany (1956)
`Naturalized United States Citizen (1995)
`
`Electrical Engineering
`University of Stuttgart
`Electrical Engineering
`University of Stuttgart
`Oregon State University Electrical Engineering
`Electrical Engineering
`University of Stuttgart
`
`Education
`Vordiplom
`Diplom Ingenieur (Honors)
`Exchange Student
`Doktor Ingenieur (Honors)
`
`1978
`(U. S. equivalent BSEE)
`1981
`(U. S. equivalent MSEE)
`1977–1978
`(U. S. equivalent Ph.D.)
`1986
`
`Current appointment
`2002 – present: Professor, Department of Electrical, Computer, and Systems Engineering; Rensselaer Polytechnic
`Institute, Troy NY
`
`2002 – 2015:
`2002 – 2015:
`
`2002 – 2012:
`
`2008 – 2009:
`
`2002 – 2003:
`1995 – 2002:
`
`1988 – 1995:
`
`1985 – 1987:
`1981 – 1985:
`
`Previous appointments
`Head and Founder of the Future Chips Constellation; Rensselaer Polytechnic Institute
`Wellfleet Senior Constellation Professor, Future Chips (Chaired Professor); Rensselaer Polytechnic
`Institute
`Professor Department of Physics, Applied Physics, and Astronomy; Rensselaer Polytechnic
`Institute
`Director, Founding Director, and Principal Investigator, NSF Engineering Center for Smart Lighting,
`Rensselaer Polytechnic Institute
`Adjunct Professor, Boston University
`Professor, Boston University, Department of Electrical and Computer Engineering; Director of the
`Semiconductor Devices Research Laboratory; Affiliated Faculty of the Photonics Center.
`Member of Technical Staff; Principal Investigator; and Member of Management at AT&T Bell
`Laboratories in Murray Hill, New Jersey
`Post-Doctoral Member of Technical Staff at AT&T Bell Laboratories in Holmdel, New Jersey.
`Scientific Member of Staff in the Department of Solid-State Chemistry at the Max Planck Institute
`for Solid-State Research in Stuttgart, Germany. Ph.D. Dissertation title: “Modern Schottky gate
`field-effect transistors based on III–V semiconductors”
`
`Fields of Technical Expertise, Hands-on Experience, and Teaching
`● Expertise, hands-on experience, and teaching in semiconductor opto-electronics including the following
`devices: LED, semiconductor laser, vertical cavity surface-emitting laser (VCSEL), solar cell, photo-detector, LED
`displays, micro-LED displays, and LCD displays. The activities include the design, fabrication, processing, and
`packaging of the devices, and the use of the devices in circuits and systems. (1981 to present)
`● Expertise, hands-on experience, and teaching in semiconductor electronics including the following devices:
`MESFET, HFET, MOSFET, CMOS-FET, LDD MOSFET, LD MOS FET, FinFET, GAA FET, Vertical MOSFET (high-power
`MOSFET), thyristor, GTO thyristor, and IGBT. The activities include the design, fabrication, processing, and
`packaging of the devices, and the use of the devices in discrete and integrated circuits. (1979 to present)
`● Expertise, hands-on experience, and teaching in thin-film deposition of metal, semiconductor, and insulator
`
`CV – 1
`
`VWGoA EX1004
`U.S. Patent No. 9,955,551
`
`

`

`Curriculum Vitae: E. Fred Schubert
`
`films by PVD (physical vapor deposition) and CVD (chemical vapor deposition) including PECVD (plasma
`enhanced CVD), MOCVD (metal-organic CVD), ALE (atomic layer epitaxy), ALD (atomic layer deposition), and
`bulk crystal growth (AlN, GaN, and sapphire). Epitaxial growth of silicon, III-V arsenide, phosphide and nitride
`epitaxial layers on GaAs, sapphire, Si, and GaN substrates by epitaxy including molecular beam epitaxy (MBE),
`metal-organic chemical vapor deposition (MOCVD), and vapor-phase epitaxy (VPE). High-k materials,
`low-k-materials, phosphors, resins, polymers, encapsulants, alloy semiconductors and their deposition
`technologies such as epitaxy, CVD, and PVD. Doping of semiconductors by various means including delta
`doping and atomic monolayer doping. (1981 to present)
`● Expertise, hands-on experience, and teaching in the design, operation, and usage of semiconductor devices in
`lighting systems, communication systems, and power-supply systems and in the analysis and development of
`LED power supplies using Boost and Buck Converters. (1993 to present)
`
`Technical Research Activities
`● Design, development and fabrication of a Si pressure sensor based on the piezo-resistivity of Si using a bridge
`configuration of four thin-film Si resistors (1979 – 1980)
`● Design of a electro-optic Mach-Zehnder Interference Modulator based on Lithium niobate (LiNbO3) operating
`at a wavelength of 1300 nm (1980 – 1981)
`● First study of hot electron effects in selectively doped AlxGa1–xAs/GaAs heterostructures (1983)
`● Demonstration and elimination of parallel conduction in AlxGa1–xAs/GaAs heterostructures (1984)
`● First analysis of semiconductors doped with simultaneously shallow and deep donors (1984).
`● Development and use of thyristor circuits (including GTO thyristor circuits) for the control of a lamp heating
`system (1984 – 1985)
`● Proposal and demonstration of the δ-doped field-effect transistor. Short-channel effects in sub-micron
`field-effect transistors can be reduced to their theoretical minimum by using δ-doped structures (1985)
`● Development of the theory of alloy broadening in luminescence spectra of alloy semiconductors such as
`AlxGa1–xAs. The current understanding of the low-temperature spectral linewidths of ternary and quaternary
`alloy semiconductors is based on this theoretical model. The publication analyzing the phenomenon of alloy
`broadening has been referenced far in excess of 100 times (1984)
`● First demonstration of a light-emitting diode with a doping superlattice active region (1985)
`● Application of δ-doping to selectively doped heterostructures; Demonstration of high-electron-mobility
`transistors (HEMTs) with highest free electron concentrations; Analysis of structures by SEM, TEM, and SIMS
`(1986).
`● Demonstration of delta-doped non-alloyed ohmic contacts with very low contact resistance and subsequent
`demonstration of self-aligned field-effect transistor with delta-doped non-alloyed ohmic contacts (1986)
`● Demonstration of the spatial
`localization of dopants within 20 Å for a number of doping elements in
`delta-doped semiconductors including GaAs and Si for MESFET and lightly-doped drain (LDD) MOSFET
`applications and the analysis of delta-doped structures by SIMS (secondary ion mass spectrometry) (with
`colleague Henry S. Luftman, 1983-1995)
`● Significant improvement of the optical properties of doping superlattices by employment of delta doping.
`Improvement is demonstrated by the first observation of quantized interband transitions in the absorption
`(1988) and in the emission spectra (1989)
`● First demonstration of tunable doping superlattice laser (1989)
`● First quantitative analysis of the capacitance-voltage (CV) profiling technique in semiconductors with
`quantum-confined carriers. Demonstration that resolution of CV profiles in quantum-confined semiconductors
`is not limited to the Debye screening length (1990)
`● Invention and demonstration a new concept by which heterojunction band discontinuities occurring between
`two different semiconductors are eliminated. The elimination of heterojunction barriers is based on parabolic
`compositional grading of doped heterojunctions. This concept is widely used in the fabrication of vertical cavity
`surface emitting lasers and other heterojunction devices (1991)
`● Invention and first demonstration of resonant cavity light-emitting diode (RCLED) which uses photon
`quantization in microcavities to enhance the spontaneous emission properties (1992)
`● Demonstration of giant enhancement of luminescence intensity in Er-doped Si-SiO2 microcavities (1992)
`● First demonstration of a resonant-cavity detector which is useful for wavelength-selective detection (1993)
`
`CV – 2
`
`

`

`Curriculum Vitae: E. Fred Schubert
`
`● Demonstration of resonant-cavity light-emitting diode (RCLED) with very high brightness. The experimental
`brightness of the RCLED is five times higher than that of conventional LEDs. Based on calculations, the
`brightness of RCLEDs is expected to exceed that of conventional LEDs by more than a factor of ten (1994)
`● Demonstration of delta doping in silicon for the fabrication of shallow junctions in scaled-down Si lightly-doped
`drain (LDD) MOSFETs for integrated circuits (Si ICs) (with colleague Dr. H. J. Gossmann, 1990 – 1995)
`● Invention of a new concept, superlattice doping, for enhanced p-type doping of GaN. All acceptors in GaN are
`deep, resulting in a low electrical acceptor activation of only 5 %. The new concept of superlattice doping is
`expected to increase the electrical activation of acceptors by more than a factor of ten (with post-doctoral
`associate Dr. W. Grieshaber, 1995)
`● Investigation of yellow luminescence in GaN and the use of microcavity effects in Ag / GaN / sapphire
`structures to determine the refractive index of GaN (with post-doctoral associate Dr. W. Grieshaber, 1996)
`● Demonstration of the first GaN / GaInN double heterostructure laser. The laser has cleaved facets and was
`optically pumped. Laser action was demonstrated by (i) a threshold in the light-versus-current characteristic,
`(ii) spectral narrowing below kT above threshold, (iii) a TE / TM polarization ratio greater than one hundred
`above threshold, and (iv) increased slope efficiency with increasing back-side facet reflectivity (with graduate
`student D. A. Stocker, 1997)
`● Co-inventor of photonic-crystal light-emitting diode, PC-LED, jointly with group of Prof. John D. Joannopoulos at
`MIT (publication by Shanhui Fan et al. appeared in Physical Review Letters in 1997; US patent 5,955,749 was
`issued in 1999)
`● First demonstration of crystallographic etching of GaN (with graduate student D. A. Stocker, 1998). The
`discovery, crystallographic etching, can be implemented by wet chemical etching, including photo-enhanced
`electrochemical (PEC) wet etching. The discovery is widely used in the LED industry to strongly enhance light
`extraction from LED chips and is found in LED light bulbs.
`● Experimental demonstration of a ten-fold enhancement of p-type doping activation in AlxGa1–xN/GaN doped
`superlattices as compared to bulk GaN and AlxGa1–xN (with graduate students D. A. Stocker and I. D. Goepfert,
`1999)
`● Invention and demonstration of the photon-recycling semiconductor light-emitting diode (PRS-LED) which
`emits white light and many other colors with very high luminous performance of > 300 lm/W (with graduate
`students X. Guo and J. W. Graff, 1999). Invention of the monolithically integrated GaInN/GaN PRS-LED (with
`graduate students X. Guo and J. W. Graff, 2000)
`● Invention and demonstration of polarization-enhanced ohmic contacts in p-type and n-type GaN (with
`graduate students Y.-L. Li and J. W. Graff 2000)
`● Invention and demonstration of AlGaInP light-emitting diode with omni-directional reflector (ODR) for high
`light extraction efficiency (with post-doctoral associate Th. Gessmann and graduate student J. W. Graff, 2001)
`● Developed novel model for high diodes ideality factors (n >> 2.0) in UV LEDs based on multiple rectifying
`elements (with graduate student J. M. Shah and Prof. Th. Gessmann, 2003)
`● Developed new class of materials, low-refractive index materials, or low-n materials, with an unprecedented
`low refractive index of n < 1.10; use of these materials as low-k materials for inter-metal-layer dielectrics in Si
`lightly-doped drain (LDD) MOSFETs in conjunction with ALD-deposited high-k gate dielectric MOSFETs for
`integrated circuits (Si ICs) (with Dr. Jong Kyu Kim, “JQ” Xi, Professors Joel Plawsky, Bill Gill, starting in 2003)
`● Developed theory for temperature coefficient of forward voltage in light-emitting diodes, particularly UV
`light-emitting diodes (with graduate student Yangang “Andrew” Xi, Dr. Jong Kyu Kim, and collaborators at
`Sandia National Laboratories, 2004, 2005)
`● Invented highly efficient “remote phosphor configurations” in white light-emitting diodes (with Jong Kyu Kim,
`Hong Luo, and collaborators at SAIT-Samsung) (2004, 2005)
`● Discovered whispering gallery modes in white LEDs with remote phosphors (with graduate student Hong Luo,
`Jong Kyu Kim, Yangang “Andrew” Xi, and collaborators at SAIT-Samsung, 2005)
`● Developed graded-index antireflection coatings that, unlike conventional anti-reflection coatings, have
`broadband omni-directional characteristics; the graded-index antireflection coatings use novel low-n materials
`(with Jingqun “JQ” Xi, Jong Kyu Kim, 2007)
`● Developed efficiency-droop reducing GaInN / GaInN and GaInN / AlGaInN LED active regions grown by MOCVD
`and ALE that were demonstrated to reduce the efficiency droop by as much as 40% (with Jong Kyu Kim, Martin
`F. Schubert, Di Zhu, Jiuru Xu, Mary Crawford, and Dan Koleske, starting in 2007)
`● Developed analytic model for efficiency droop based on drift-induced reduction of the carrier-injection
`
`CV – 3
`
`

`

`Curriculum Vitae: E. Fred Schubert
`
`efficiency (with Guan Bo Lin, Jaehee Cho, and others, 2012)
`
`Honors and awards
`● Google Scholar profile, including the Hirsch-index (h-index) can be found at < http://scholar.google.com >
`under profile “E. Fred Schubert”
`● Elected to Senior Member of the IEEE “in recognition of professional standing” (1993)
`● Recipient of the Literature Prize of the Verein Deutscher Elektrotechniker (VDE) for “Doping in III–V
`semiconductors” (Cambridge University Press, Cambridge, 1993). Citation: “The book concerns all aspects of
`doping in III–V semiconductors. Fundamental, practical, and technological issues of doping are addressed. The
`book covers the basic theory of shallow donors, shallow acceptors, deep levels, and their influence on the free
`carrier concentration. It also discusses doping during growth, epitaxy, diffusion, and ion implantation. In the
`field of semiconductor devices,
`the book emphasizes applications requiring highly controlled doping
`distributions. It is an excellent monograph equally suited for study, research, and industry” (1994)
`● Elected as a member of the Bohemian Physical Society (Cornell University, Ithaca, NY). Citation: “For seminal
`contributions to the control of spontaneous emission by use of wavelength-size optical cavities, specifically the
`first demonstration in a glass host using rare earth implanted Si/SiO2 resonant microcavities” (1994)
`● Listed in “Who’s Who In Science And Engineering” and “Who’s Who in America” published by Marquis Who’s
`Who, publishers of the original Who’s Who in America. (Marquis Who’s Who, New Providence, NJ) ISBN
`0-8379-5755-9 (1996 – present)
`● Elected Fellow of the SPIE “For pioneering research in semiconductor doping and sustained contributions to
`the development of high-efficiency light-emitting diodes and lasers”. According to the Society’s bylaws, a
`Fellow “shall be distinguished through his achievements and shall have made outstanding contributions in the
`field of optics, or optoelectronics, or in a related scientific, technical, or engineering field” (1999)
`● Recipient of the Alexander von Humboldt Senior Research Award of the Alexander von Humboldt Foundation, a
`Bonn-based non-profit organization promoting the exchange of scientific knowledge between German and
`highly qualified foreign scholars. According to the Alexander von Humboldt Foundation, academic qualification
`is the only selection criterion for the award. The award resulted in two extended visits with the Microoptics
`Laboratory of Professor Jürgen Jahns at the University of Hagen, Germany (1999)
`● Elected to Fellow of the IEEE “for contributions to semiconductor doping and resonant-cavity devices”.
`According to the IEEE definition “the grade of Fellow is one of unusual professional distinction conferred by the
`Board of Directors only upon a person of extraordinary qualifications and experience” (1999)
`● Listed in the “Dictionary of International Biography, 29th Edition” published by the International Biography
`Center, Cambridge, United Kingdom (2000)
`● Recipient of the 2000 Discover Magazine Award for Technological Innovation presented by the Christopher
`Columbus Foundation in the category “Energy”. The prize was awarded “for the invention and demonstration
`of the photon recycling semiconductor light-emitting diode”, an all-semiconductor LED capable of emitting
`white light with very high efficiency, see < www.discover.com/awards > (2000)
`● Recipient of the RD100 Award of the R&D Magazine that honors the “100 most technologically significant
`products of the year” (with Klaus Streubel of Osram-Sylvania Corp. and Rickard Marcks von Wurtemberg of
`Mitel Corp.). The prize was awarded for the “Resonant-cavity light-emitting diode” that uses enhanced
`spontaneous emission occurring in resonant cavities. The device is used in plastic optical fiber communication
`links, in telescopes for rifles, and many other applications (2000).
`● Elected to Fellow of the OSA “for the invention and demonstration of the resonant-cavity LED and the
`photon-recycling semiconductor LED”. OSA Fellows are elected by the OSA Board of Directors (2001)
`● Recipient of the Boston University Provost Innovation Fund Award (Provost Dennis D. Berkey) valued at
`$ 25,000 for research and development of promising technologies (2001)
`● Elected to Fellow of the APS “for pioneering contributions to the doping of semiconductors including delta
`doping, doping of compositionally graded structures resulting in the elimination of band discontinuities, and
`superlattice doping to enhance acceptor activation” (2001)
`● Honored with RPI Medal as Senior Constellation Chair during Investiture Ceremony (2002)
`● Received “2002 Rensselaer Polytechnic Institute Trustee Faculty Achievement Award” (2002)
`● Inducted as Wellfleet Senior Constellation Professor, Future Chips, Rensselaer Polytechnic Institute,
`November 21 (November 2003)
`
`CV – 4
`
`

`

`Curriculum Vitae: E. Fred Schubert
`
`● Distinguished Lecturer of the IEEE Electron Devices Society (2003–2006)
`● Elected member in Eta Kappa Nu (2004)
`● “Best Oral Presentation Award” was won by Ph. D. student Hong Luo (who was the presenter), J. K. Kim, Y. A.
`Xi, J. M. Shah, Th. Gessmann and E. F. Schubert “Improvement of extraction efficiency of GaInN light-emitting
`diodes by employment diffuse omni-directional reflectors” Connecticut Microelectronics & Optoelectronics
`Consortium (CMOC), 14th annual symposium, New Haven CT, March 17 (March 2005).
`● “Best Student Poster Award” of the International Semiconductor Device Research Symposium (ISDRS) was won
`by Ph. D. student J.Q. Xi (presenter), Jong Kyu Kim, Dexian Ye, Jasbir S. Juneja, T.-M. Lu, Shawn-Yu Lin, and E.
`Fred Schubert “Optical Thin Films with Very Low Refractive Index and Their Application in Photonic Devices”,
`International Semiconductor Device Research Symposium (ISDRS), Dec. 7 – 9, Bethesda, MD (December 2005)
`● “MRS Silver Award” of the Materials Research Society was won by Ph. D. student Yangang Andrew Xi (who was
`the presenter), K. X. Chen, F. Mont, J. K. Kim, C. Wetzel, E. F. Schubert, W. Liu, X. Li, J. A. Smart “Extremely high
`quality AlN grown on (0001) sapphire by using metal-organic vapor-phase epitaxy” Materials Research Society
`(MRS) Fall Meeting, Boston MA, November 27 – December 1 (2006) Boston MA (December 2006)
`● “25 Most Innovative Micro- and Nano-Products of 2007 Award” in July 2007 issue of R&D Magazine and
`Micro/Nano Newsletter. This recognition was given for the “Non-Reflective Coating” product that was
`published in Nature Photonics in 2007; full citation: Xi, J.-Q., Martin F. Schubert, J. K. Kim, E. F. Schubert,
`Minfeng Chen, Shawn-Yu Lin, Wayne Liu, and Joe A. Smart “Optical thin-film materials with low refractive index
`for broadband elimination of Fresnel reflection” Nature Photonics 1, 176, March 2007 (July 2007)
`● “SCIENTIFIC AMERICAN 50 AWARD” of 2007, as published in the January 2008 issue of Scientific American. According
`to the Scientific American Magazine, this award “celebrates visionaries from the worlds of research, industry
`and politics whose recent accomplishments point toward a brighter technological future for everyone”
`(January 2008)
`● “EDITORS’ CHOICE” of Science Magazine, Science, Volume 319, page 1163, February 29 (February 2008). This
`distinction was awarded for the publication: Jong Kyu Kim et al., “Light-extraction enhancement of GaInN
`light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact” that appeared in
`Advanced Materials 20, 801, 2008 (February / March 2008)
`● Received “2008 Rensselaer Polytechnic Institute Trustee Faculty Achievement Award” (2008)
`● “Best Oral Presentation Award” won by David J. Poxson (who was the presenter), Frank W. Mont, Jong Kyu Kim,
`and E. Fred Schubert “Multilayer nano-structured anti-reflection coating with broad-band omni-directional
`characteristics” Connecticut Microelectronics and Optoelectronics Conference (CMOC), University of
`Connecticut, Storrs, Connecticut, April 9 (April 2008)
`● “Best Oral Presentation Award” for presentation: David Meyaard, Sameer Chhajed, Jaehee Cho, E. Fred
`Schubert, Jong Kyu Kim, Daniel D. Koleske, and Mary H. Crawford “Temperature-dependent light-output
`characteristics of GaInN light-emitting diodes with different dislocation densities” Connecticut Microelectronics
`and Optoelectronics Consortium (CMOC) Symposium, New Haven CT, March 2 (March 2011)
`● Identified as top 1% of patentees in the field of optoelectronics by study conducted by Professor Erica Fuchs of
`Carnegie Mellon University under a study supported by the US National Science Foundation (July 2011)
`● Received “2012 Rensselaer Polytechnic Institute Trustee Faculty Achievement Award” (November 2012)
`● My “LinkedIn” profile was one of the top 10% most viewed “LinkedIn” profiles during 2012 (January 2013)
`● My graduate student, Mr. Ming Ma, received the $ 30,000.00 Lemelson-Rensselaer Student Prize for the
`invention entitled “Graded-refractive-index (GRIN) structures for brighter and smarter light-emitting diodes”;
`The Prize is awarded annually by the Lemelson Foundation (March 2013)
`
`Service to the technical community
`● Current or former member of the American Physical Society (Member of the Division of Materials Physics,
`Member of the Division of Condensed Matter Physics),
`Institute of Electrical and Electronics Engineers,
`Materials Research Society, Optical Society of America, Society for Optical Engineering (SPIE), and the Verein
`Deutscher Elektrotechniker
`● Co-author of hundreds of research articles, co-inventor of more than 30 United States patents, and numerous
`foreign patents (1981 – present)
`● Gave many invited talks at scientific conferences organized by the American Physical Society, Institute of
`Electrical and Electronic Engineers, Materials Research Society, SPIE (The International Society for Optical
`
`CV – 5
`
`

`

`Curriculum Vitae: E. Fred Schubert
`
`Engineering), Electrochemical Society, American Vacuum Society, Engineering Foundation, and other
`professional societies (1985 – present).
`● Co-editor (with A. M. Glass) of a Special Issue of the Journal of Optical and Quantum Electronics (Vol. 22, 1990)
`on “Charge-transport assisted optical non-linearities in semiconductors” (1990)
`● Symposium chair of the American Vacuum Society Greater New York and New Jersey Chapter on “Epitaxially
`grown semiconductors with atomic level control” (1991).
`● Moderator of MRS Internet discussion on “Doping and Dopants in GaN” (MRS Internet Journal, 1995 – 1997)
`● Member of review panels of the National Science Foundation (1995 – present)
`● Conference Chair of SPIE Photonics West conference on “Light-emitting diodes: Research, Manufacturing, and
`Applications” San Jose, CA (1997)
`● Technical work has been featured in popular journals, magazines and newspapers including the New Scientist,
`Discover Magazine, Wall Street Journal, Boston Globe, Focus, and on National Public Radio (1996 – present)
`● Conference Chair of SPIE Photonics West conference on “Light-emitting diodes: Research, Manufacturing, and
`Applications” San Jose, CA (1998)
`● Program Committee Member: IEEE IEDM, International Electron Devices Meeting (1999 and 2000)
`● Conference Chair of SPIE Photonics West conference on “Light-emitting diodes: Research, Manufacturing, and
`Applications” San Jose, CA (1999)
`● Program Committee Member: ISBLLED, International Symposium on Blue Laser and Light-Emitting Diodes,
`Berlin, Germany, March 5 – 10 (2000)
`● Conference Chair of SPIE Photonics West conference on “Light-emitting diodes: Research, Manufacturing, and
`Applications” San Jose, CA (2000)
`● Conference Chair and Co-Organizer of the TMS- and ONR-sponsored conference on “Doping, Dopants, and Low
`Field Carrier Dynamics in Wide Gap Semiconductors”, Copper Mountain, Colorado, April 2 - 6 (2000)
`● Chair, IEEE LEOS, Central New England Chapter. During my tenure as Chair, the Central New England Chapter
`won the IEEE LEOS Chapter award for the highest membership growth (1999 – 2000)
`● Expert Witness involving semiconductor materials, devices, and packaging including elemental and compound
`semiconductors such as Si, SiGe, SiC, as well as III–V arsenides, phosphides and nitrides (1998 – present)
`● Member of the Board of Governors, IEEE Laser and Electro-Optics Society (LEOS) (1999 – 2000)
`● Member of the Optoelectronics Industry Development Association (OIDA) Roadmap Panel on Solid-State
`Lighting, Albuquerque NM Oct. 26 – 28 (2000)
`● Conference Chair of SPIE Photonics West conference on “Light-emitting diodes: Research, Manufacturing, and
`Applications” San Jose, CA (2001)
`● Panel Member of National Research Council meeting on “Solid-State Lighting:” held at NAS and NAE,
`Washington DC, March 26 (2001)
`● Program Committee Member of SPIE Photonics West conference on “Laser and LED Applications” chaired by
`Dr. Kurt Linden, San Jose CA Jan (2002)
`● Conference Chair of SPIE Photonics West conference on “Light-emitting diodes: Research, Manufacturing, and
`Applications” San Jose, CA (2002)
`● Program Committee Member: ISBLLED, International Symposium on Blue Laser and Light-Emitting Diodes,
`Cordoba, Spain, March 11–15 (2002)
`● Program Committee Member for subcommittee on “Semiconductor lasers and LEDs” for OSA Conference on
`Lasers and Electro-Optics and Quantum Electronics and Laser Science Conference (CLEO / QELS) (2002 – 2003)
`Baltimore MD June 1–6 (2003)
`● Reviewer for the National Research Council of report entitled "Partnerships for Solid-State Lighting: Report of a
`Workshop” authored by the Board on Science, Technology, and Economic Policy. This report is forwarded to
`the US Congress for the initiation of a national Solid-State Lighting Initiative. (2002)
`● Program Committee Member “Lester Eastman conference on high performance devices” University of
`Delaware, Newark, Delaware, August 6 – 8 (2002)
`● Conference Chair of SPIE Photonics West conference on “Light-emitting diodes: Research, Manufacturing, and
`Applications” San Jose CA (2003)
`● OIDA Next Generation Lighting (NGL) Consortium. Member of “Light-Emitting Diode” Committee (2003)
`● Program Committee Member, International Semiconductor Device Research Symposium (ISDRS) Washington
`DC, Dec. 8 – 12 (2003)
`● Program Committee Member of “Display and Solid-State Lighting Devices” conference for OSA/IEEE
`
`CV – 6
`
`

`

`Curriculum Vitae: E. Fred Schubert
`
`Conference on Lasers and Electro-Optics (CLEO) (2003 – 2004)
`● Elected Member of the IEEE Electron Device Society Administration Committee (IEEE AdCom) (2003 – 2008)
`● Conference Chair of SPIE Photonics West conference on “Light-emitting diodes: Research, Manufacturing, and
`Applications” San Jose CA (2004)
`● Program Committee Member “Fourth International Conference on Solid-State Lighting” August 2 – 6 Denver,
`CO (2004)
`● Program Committee Member for the “Blue 2004: Advanced LEDs and Lasers Conference” Hsinchu, Taiwan,
`May 10 – 12 (2004)
`● Conference Chair of SPIE Photonics West conference on “Light-emitting diodes: Research, Manufacturing, and
`Applications” San Jose CA (2005)
`● Program Committee Member “International Semiconductor Device Research Symposium” December 7 – 9
`Washington, DC (2005)
`● Chair of “Display and Solid-State Lighting Devices” conference of OSA/IEEE Conference on Lasers and
`Electro-Optics (CLEO) (2005)
`● Best Oral Presentation Award (Presenter: Hong Luo) at Connecticut Microelectronics & Optoelectronics
`Consortium (CMOC), 14th annual symposium, New Haven CT, March 17 (March 2005)
`● Conference Chair of MRS Spring meeting “Symposium DD: Solid-State Lighting Materials and Devices” San
`Francisco, April 17 – 21 (April 2006)
`● Member on the International Advisory Committee of First International Conference on Display LEDs (ICDL
`2007), Seoul, Korea, January 31 to February 2 (2007)
`● Member, Program Committee of SPIE Photonics West conference “Light-Emitting Diodes: Research,
`Manufacturing, and Applications XI” San Jose, CA, January 20 – 25 (2007)
`● Program Chair of SPIE Photonics West conference “Semiconductor Lasers and LEDs” San Jose, CA, January 20 –
`25 (2007)
`● Member, Executive Organizing Committee SPIE Photonics West conference “LASE 2007” San Jose, CA, January
`20 – 25 (2007)
`● Opto Track Chair of SPIE Photonics West conference “Semiconductor Lasers and LEDs” San Jose, CA, January 21
`– 24 (January 2008)
`● Member, Program Committee, Light-emitting diodes: Research, Manufacturing, and Applications, SPIE
`Photonics West 2008, San Jose, California, January 19 – 24 (January 2008)
`● Program Committee Member of the 7th International Symposium on Semiconductor Light Emitting Devices
`(ISSLED-2008) held in Phoenix, Arizona (USA), April 27 – May 2 (April 2008)
`● Member, Program Committee, China SSL 2008, Shenzhen Convention & Exhibition Center, China, July 24 – 26
`(July 2008)
`● Member, Program Committee,
`International Workshop on Nitride Semiconductors, IWN 2008, Montreux,
`Switzerland, October 6 – 10 (October 2008)
`● Opto Track Chair of SPIE Photonics West conference “Semiconductor Lasers and LEDs” San Jose, CA, January 25
`– 29 (January 2009)
`● Guest Editor of Special Issue on Solid-State Lighting published in the IEEE Journal of Selected Topic in Quantum
`Electronics, July / August edition (August 2009)
`● Honorable Conference Chair, 6th China International Forum on Solid-State Lighting (China SSL), Shenzhen
`Convention & Exhibition Center, China, October 14 – 16 (October 2009)
`● Program Committee Member, International Conference on Nitride Semiconductors (ICNS), Jeju, South Korea,
`October 18 – 23 (October 2009)
`● Program Committee Member, The Second International Conference on White LEDs and Solid-State Lighting,
`Taipei, Taiwan, December 13 – 16 (December 2009)
`● Editor, Compound Semiconductors and Energy Applications and Environmental Sustainability, Materials
`Research Society (MRS) Symposium Proceedings Volume 1167 (MRS, Warrendale PA, 2009)
`● Conference Chair, OPTO, SPIE Photonics West 2010, San Francisco, California, January 23 – 27 (January 2010)
`● Guest Editor of Special Issue on Light-Emitting Diodes published in the IEEE Transactions on Electron Devices
`(January 2010)
`● Program Committee Member, 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED),
`Beijing, China, May 16 – 21 (May 2010)
`
`CV – 7
`
`

`

`Curriculum Vitae: E. Fred Schubert
`
`● International Advisory Committee Member of the 16th Microoptics Conference (MOC’10) held in Hsinchu,
`Taiwan, sponsored and endorsed by OSA and IEEE/Photonics Society and organized by National Chiao Tung
`University, Oct. 31 to Nov. 3 (October 2010)
`● Member of Academic Committee of China Solid-State Lighting Conference (CHINA SSL 2010) Shenzhen, China,
`October 14 – 16 (October 2010)
`● Conference Co-Chair, OPTO, SPIE Photonics West 2011, San Francisco, California, January 22 – 27 (January 2011)
`● Executive Organizing Committee OPTO, SPIE Photonics West 2011, San Francisco, California, January 22 – 27
`(January 2011)
`● Program Committee Member of conference entitled: “Light-Emitting Diodes: Materials, Devices, and
`Applications for Solid-State Lighting XV SPIE Photonics West 2011, San Francisco, California, January 22 – 27
`(January 2011)
`● Member of CLEO Subcommittee 15, entitled “LEDs, Photovoltaics and Energy-Efficient (“Green”) Photonics” for
`the 2011 Conference on Lasers and Electro-Optics (CLEO), Baltimore, Maryland May 1 – 6 (May 2011)
`● Member of
`the Academic Committee of
`the 8th China International Forum on Solid-State Lighting
`(CHINA-SSL-2011) Guangzhou November 8 – 10 (November 2011)
`● Program Committee Member of conference entitled: “Light-Emitting Diodes: Ma