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`21. An electronic system, the system comprising: at least one semiconductor
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`device, the at least one semiconductor device including: a substrate of a first
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`doping type at a first doping level having a surface; a first active region disposed
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`adjacent the surface of the substrate with a second doping type opposite in
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`conductivity to the first doping type and within which transistors can be formed in
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`the surface thereof; a second active region separate from the first active region
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`disposed adjacent to the first active region and within which transistors can be
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`formed in the surface thereof; transistors formed in at least one of the first active
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`region or second active region; at least a portion of at least one of the first and
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`second active regions having at least one graded dopant concentration to aid carrier
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`movement from the first and second active regions towardssurface to an area of the
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`substrate where there are no active regions; and at least one well region adjacent to
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`the first or second active region containing at least one graded dopant region, the
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`graded dopant region to aid carrier movement from the surface towardsto the area
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`of the substrate where there are no active regions, and wherein at least some of the
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`transistors form digital logic of the semiconductor device.graded dopant
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`concentration is linear, quasilinear, error function, complementary error function,
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`or any combination thereof.
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`1
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`SONY 1009
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