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`Jandhyala, S. et al., "Design-For-Test Analysis of a Buffered SDRAM DIMM", Semiconductor Group, Texas
`Instruments, Proceedings of International Workshop in Memory Technology, Design and Testing, Singapore, August
`13014, 1996, 15 pages.
`
`q
`
`28
`
`JEDEC Standard, Double Data Rate (DDR): SDRAM Specification: JESD79C (Revision JESD79B), March 2003, pp.
`1-75.
`
`29
`
`JEDEC Standard, FBDIMM Specification: DDR2 SDRAM Fully Buffered DIMM (FBDIMM) Design Specification:
`JESD205, JEDEC SOLID STATE TECH. ASSOC., March 2007, pp. 1-129.
`
`30 Mutnuary, B. et al., "Analysis of Fully Buffered DIMM Interface in High-speed Server Applications", IBM Corp, xSeries
`eServer Development, 2006 Electronic Components and Technology Conference, pp. 203-208.
`
`31
`
`Petition for Inter Partes Review of U.S. Patent No. 8,516,187 (on behalf of SanDisk, Corp.), filed June 19, 2014.
`
`EFS Web 2.1.17
`
`Samsung Electronics Co., Ltd.
`Ex. 1011, p. 13
`
`

`

`INFORMATION DISCLOSURE
`STATEMENT BY APPLICANT
`( Not for submission under 37 CFR 1.99)
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`Application Number
`
`Filing Date
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`2015-08-31
`
`First Named Inventor Hyun Lee
`
`Art Unit
`
`Examiner Name
`
`Attorney Docket Number
`
`062453-036
`
`32
`
`Petition for Inter Partes Review of U.S. Patent No. 8,301,833 (on behalf of SanDisk, Corp.), filed June 20, 2014.
`
`33
`
`"Using Two Chip Selects to Enable Quad Rank", an IP.com Prior Art Database Technical Disclosure, IP.com Electronic
`Publication: December 17, 2005, 2 pages.
`
`34
`
`Petition for Inter Partes Review of U.S. Patent No. 8,516,187 (on behalf of SMART Modular Technologies, Inc.), filed
`August 22, 2014.
`
`35
`
`Petition for Inter Partes Review of U.S. Patent No. 8,301,833 (on behalf of SMART Modular Technologies, Inc.), filed
`August 22, 2014.
`
`36
`
`"Out of Stealth Mode, Start-Up MetaRAM Unveils New Technology That Quadruples DRAM Capacity", Press Release
`edited by Storage Newsletter on February 28, 2008 at StorageNewsLetter.com, 8 pages.
`
`37
`
`"MetaRAM Develops New Technology That Quadruples Memory Capacity of Servers and Workstations; Reduces
`Price by Up to 90 Percent", Press Release provided by MetaRAM and published on MarketWired.com, February 25,
`2008, 3 pages.
`
`q
`
`38
`
`"240pin DDR2 MetaSDRAM Registered DIMM based on 1 GB version C", Hynix Semiconductor, Product Description
`Rev. 0.2, September 2008, 32 pages.
`
`39
`
`Notice of Allowance in U.S. Patent Application No. 14/489,269, mailed October 8, 2015.
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`If you wish to add additional non-patent literature document citation information please click the Add button Add
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`EFS Web 2.1.17
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`Samsung Electronics Co., Ltd.
`Ex. 1011, p. 14
`
`

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`INFORMATION DISCLOSURE
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`Application Number
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`Samsung Electronics Co., Ltd.
`Ex. 1011, p. 15
`
`

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`EFS Web 2.1.17
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`Samsung Electronics Co., Ltd.
`Ex. 1011, p. 16
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`PTO/AIA/14 (07-14)
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`FLASH-DRAM HYBRID MEMORY MODULE
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`Samsung Electronics Co., Ltd.
`Ex. 1011, p. 17
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`PTO/AIA/14 (07-14)
`Approved for use through 04/30/2017. OMB 0651-0032
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`Ex. 1011, p. 18
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`

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`PTO/AIA/14 (07-14)
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