`571-272-7822
`
`Paper 49
`Entered: December 6, 2023
`
`UNITED STATES PATENT AND TRADEMARK OFFICE
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`
`
`
`
`
`SAMSUNG ELECTRONICS CO., LTD., MICRON TECHNOLOGY, INC.,
`MICRON SEMICONDUCTOR PRODUCTS, INC., and MICRON
`TECHNOLOGY TEXAS LLC, 1
`Petitioner,
`v.
`NETLIST, INC.,
`Patent Owner.
`
`IPR2022-00996
`Patent 11,016,918 B2
`
`
`
`
`
`Before PATRICK M. BOUCHER, JON M. JURGOVAN, and
`DANIEL J. GALLIGAN, Administrative Patent Judges.
`JURGOVAN, Administrative Patent Judge.
`
`
`
`
`DECISION
`Final Written Decision
`Determining All Challenged Claims Unpatentable
`Dismissing Petitioner’s Motion to Exclude
`35 U.S.C. § 318(a)
`
`
`1 Micron Technology, Inc., Micron Semiconductor Products, Inc., and
`Micron Technology Texas LLC filed a motion for joinder and a petition in
`IPR2023-00406 and have been joined as petitioners in this proceeding. See
`Paper 26.
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`IPR2022-00996
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`INTRODUCTION
`I.
`Samsung Electronics Co., Ltd. (“Samsung”) filed a Petition (Paper 1,
`“Pet.”) for inter partes review of claims 1–30 (“challenged claims”) of U.S.
`Patent 11,016,918 B2 (Ex. 1001, “the ’918 patent”). Netlist, Inc. (“Patent
`Owner”) filed a Preliminary Response (Paper 7, “Prelim. Resp.”) to the
`Petition. We instituted inter partes review under 35 U.S.C. § 314(a).
`Paper 10 (“Inst. Dec.”).
`During the trial, Patent Owner filed a Response (Paper 21, “Resp.”),
`Petitioner filed a Reply (Paper 25), and Patent Owner filed a Sur-Reply
`(Paper 31). We joined Micron Technology, Inc., Micron Semiconductor
`Products, Inc., and Micron Technology Texas LLC as petitioners in this
`proceeding, and we refer to Samsung and these entities collectively as
`“Petitioner.” See Paper 26.
`Petitioner and Patent Owner requested oral argument (Papers 28 and
`29). A hearing was conducted on September 11, 2023. Paper 47 (“Tr.”).
`Petitioner objected to evidence (Paper 32) and filed a Motion to
`Exclude (Paper 33). Patent Owner filed an Opposition to Petitioner’s
`Motion to Exclude (Paper 34), and Petitioner filed a Reply (Paper 37) in
`support of its Motion to Exclude.
`We have jurisdiction under 35 U.S.C. § 6. This Final Written
`Decision is entered pursuant to 35 U.S.C. § 318(a). Having reviewed the
`complete trial record, we determine that Petitioner has shown, by a
`preponderance of the evidence, that the challenged claims are unpatentable.
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`II. BACKGROUND
`Real Parties in Interest
`A.
`The identified real parties in interest on the Petitioner side are the
`following entities: Samsung Electronics Co., Ltd., Samsung Semiconductor,
`Inc., Micron Technology, Inc., Micron Semiconductor Products, Inc., and
`Micron Technology Texas LLC. Pet. 1; IPR2023-00406, Paper 3, 1.
`Patent Owner identifies itself as the sole real party in interest. Paper
`
`4, 1.
`
`Related Matters
`B.
`The parties advise that the ’918 patent is related to the following
`pending matters:
`• Samsung Electronics Co., Ltd. et al. v Netlist, Inc., No. 1:21-cv-
`01453 (D. Del. filed Oct. 15, 2021)
`• Netlist, Inc. v. Samsung Electronics Co., Ltd. et al., No. 2:21-
`cv-00463 (E.D. Tex. filed Dec. 20, 2021)
`• Netlist, Inc. v. Micron Technology, Inc., No. 2:22-cv-00203
`(E.D. Tex. filed June 13, 2022)
`• IPR2012-00999 (U.S. Patent No. 11,232,054)
`• U.S. Patent Application No. 17/582,797
`Pet. 1; Paper 4, 1; Paper 9, 2; Paper 12, 1.
`
`The parties advise that the following related proceeding is no longer
`pending:
`• IPR2017-00692 (U.S. Patent No. 8,874,831)
`Pet. 1; Paper 4, 1.
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`C. Overview of the ’918 Patent (Ex. 1001)
`The ’918 patent is titled “Flash-DRAM Hybrid Memory Module.”
`Ex. 1001, code (54). Figure 12 of the ’918 patent is reproduced below.
`
`
`Figure 12 shows an example memory system 1010 of the ’918 patent.
`Id. at 21:14–16. The memory system 1010 includes a volatile memory
`subsystem 1030, a non-volatile memory subsystem 1040, and a controller
`1062 operatively coupled to the volatile memory subsystem 1030 and
`selectively coupled to the non-volatile memory subsystem 1040. Id. at
`21:16–22. Volatile memory 1030 may comprise elements 1032 of two or
`more dynamic random access memory (DRAM) elements such as double
`data rate (DDR), DDR2, DDR3, and synchronous DRAM (SDRAM). Id. at
`22:16–19. Non-volatile memory 1040 may comprise elements 1042 of flash
`memory elements such as NOR, NAND, ONE-NAND flash and multi-level
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`cell (MLC). Id. at 22:35–40. Memory system 1010 may comprise a
`memory module or printed circuit board (PCB) 1020. Id. at 21:24–26.
`Memory system 1010 has an interface 1022 for power voltage, data, address,
`and control signal transfer between memory system 1010 and a host system.
`Id. at 22:3–6.
`
`Controller 1062 may include microcontroller unit 1060 and FPGA
`logic 1070, either as separate devices or integrated together. Id. at 24:35–37,
`23:19–22, Fig. 14. Microcontroller 1060 may transfer data between the
`volatile memory 1030 and non-volatile memory 1040. Id. at 24:35–41.
`Logic element 1070 provides signal level translation and address translation
`between the volatile memory and the non-volatile memory. Id. at 24:45–56.
`When the system is operating normally, controller 1062 controls
`switch 1052 to decouple the volatile memory 1030 from controller 1062 and
`the non-volatile memory 1040 (the ’918 patent refers to this as the “first
`state.”). Id. at 24:60–25:7. In response to a power interruption, for example,
`controller 1062 controls switch 1052 to couple the volatile memory 1030 to
`itself and non-volatile memory 1040, and transfers data from the volatile
`memory to the non-volatile memory to prevent its loss (the ’918 patent
`refers to this as the “second state”). Id. at 25:9–20.
`
`Memory system 1010 may comprise a voltage monitor 1050 to
`monitor voltage supplied from the host system via interface 1022. Id. at
`25:8–10. When the voltage monitor 1050 detects a low voltage condition,
`the voltage monitor transmits a signal to the controller 1062 to indicate the
`detected condition. Id. at 25:11–15.
`
`Power may be supplied from a first power supply (e.g., a system
`power supply) when the memory system 1010 is in the first state and from a
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`second power supply 1080 when the memory system 1010 is in the second
`state. Id. at 25:54–58. Second power supply 1080 may comprise step-up
`transformer 1082, step-down transformer 1084, and capacitor bank 1086
`with one or more capacitors. Id. at 26:3–13.
`The memory system 1010 further has a third state in which controller
`1062 is decoupled from the volatile memory system 1030 and power is
`supplied to the volatile memory subsystem 1030 from a third power supply
`(not shown). Id. at 25:62–69. “[T]he third power supply may provide
`power to the volatile memory subsystem 1030 when the memory system
`1010 detects that a trigger condition is likely to occur but has not yet
`occurred.” Id. at 25:66–26:3.
`Figure 16 of the ’918 patent is reproduced below.
`
`Figure 16 shows power module 1100 of memory system 1010. Id. at
`27:59–61. Power module 1100 comprises conversion element 1120, first
`power element 1130, and second power element 1140. Id. at 28:7–15,
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`28:20–22. Conversion element 1120 comprises sub-blocks 1122, 1124,
`1126 comprised of various converter circuits such as buck converters, boost
`converters, and buck-boost converters for providing various voltages 1102,
`1104, 1105, 1107 from the outputs of the first and second power elements
`1130, 1140. Id. at 29:18–54. The first power element 1130 may comprise a
`pulse-width modulation power controller generating voltage 1110 from
`voltages 1106, 1108. Id. at 28:13–15. Second power element 1140 may
`comprise capacitor array 1142, buck-boost converter 1144 receiving
`voltages 1106, 1108 and adjusting the voltage for charging the capacitor
`array, and voltage/current limiter 1146, which limits charge current to the
`capacitor array and stops charging the capacitor array 1142 when it reaches a
`certain charge voltage. Id. at 28:62–67. “[P]ower module 1100 provides
`power to [ ] components of the memory system 1010 using different
`elements based on a state of the memory system 1010 in relation to a trigger
`condition.” Id. at 27:61–65.
`Specifically, “[i]n a first state, the first voltage 1102 is provided to the
`memory system 1010 from the input 1106 and the fourth voltage 1110 is
`provided to the conversion element 1120 from the first power element
`1130.” Id. at 28:27–31. “In a second state, the fourth voltage 1110 is
`provided to the conversion element 1120 from the first power element 1130
`and the first voltage 1102 is provided to the memory system 1010 from the
`conversion element 1120.” Id. at 28:32–37. “In the third state, the fifth
`voltage 1112 is provided to the conversion element 1120 from the second
`power element 1140 and the first voltage 1104 is provided to the memory
`system 1010 from the conversion element 1120.” Id. at 28:34–38.
`Transition from the first state to the second state may occur when power
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`module 1100 detects a power failure is about to occur, and transition from
`the second state to the third state may occur when it detects a power failure
`has occurred. Id. at 28:39–47.
`Illustrative Claim
`D.
`Of the challenged claims, claims 1, 16, and 23 are independent.
`Independent claim 1, reproduced below with brackets noting Petitioner’s
`identifiers, is illustrative of the claimed subject matter.
`1. [1.a] A memory module comprising:
`[1.b] a printed circuit board (PCB) having an interface
`configured to fit into a corresponding slot connector of a host
`system, the interface including a plurality of edge connections
`configured to couple power, data, address and control signals
`between the memory module and the host system;
`[1.c] a first buck converter configured to provide a first
`regulated voltage having a first voltage amplitude;
`[1.d] a second buck converter configured to provide a second
`regulated voltage having a second voltage amplitude;
`[1.e] a third buck converter configured to provide a third
`regulated voltage having a third voltage amplitude;
`[1.f] a converter circuit configured to provide a fourth
`regulated voltage having a fourth voltage amplitude; and
`[1.g] a plurality of components coupled to the PCB, each
`component of the plurality of components coupled to one or more
`regulated voltages of the first, second, third and fourth regulated
`voltages, the plurality of components comprising:
`[1.h] a plurality of synchronous dynamic random access
`memory (SDRAM) devices coupled to the first regulated
`voltage, and
`[1.i] [1.i.1] at least one circuit coupled between a first portion
`of the plurality of edge connections and the plurality of SDRAM
`devices, [1.i.2] the at least one circuit operable to (i) receive a
`first plurality of address and control signals via the first portion
`of the plurality of edge connections, and (ii) output a second
`plurality of address and control signals to the plurality of
`SDRAM devices, [1.i.3] the at least one circuit coupled to both
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`Amidi
`
`Spiers
`
`FBDIMM
`Standards
`Hajeck
`
`
`
`the second regulated voltage and the fourth regulated voltage,
`[1.i.4] wherein a first one of the second and fourth voltage
`amplitudes is less than a second one of the second and fourth
`voltage amplitudes.
`Ex. 1001, 38:19–44.
`Evidence
`E.
`Petitioner relies on the following references (see Pet. 3, 10–14), as
`well as the Declaration of Dr. Andrew Wolfe (Ex. 1003).
`Reference Exhibit No.
`Patent/Printed Publication
`Harris
`1023
`U.S. Patent Pub. No. 2006/0174140 A1 to
`Harris, published August 3, 2006
`U.S. Patent No. 7,724,604 B2, issued May 25,
`2010
`U.S. Patent Pub. No. 2006/0080515 A1,
`published April 13, 2006
`1027, 1028 JESD82-20 and JESD205 standards published
`March 2007
`U.S. Patent No. 6,856,556 B1 to Hajeck, issued
`February 15, 2005
`Prior Art and Asserted Grounds
`F.
`Petitioner asserts that claims 1–30 are unpatentable on the following
`Grounds (Pet. 3):
`Claims Challenged 35 U.S.C. §
`1–3, 8, 14, 15, 23
`103(a)
`1–30
`103(a)
`1–30
`103(a)
`1–30
`103(a)
`1–30
`103(a)
`
`References
`Harris, FBDIMM Standards
`Harris, FBDIMM Standards, Amidi
`Harris, FBDIMM Standards, Amidi,
`Hajeck
`Spiers, Amidi
`Spiers, Amidi, Hajeck
`
`1024
`
`1025
`
`1038
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`III. ANALYSIS OF CHALLENGED GROUNDS
`We now consider Petitioner’s asserted grounds of unpatentability and
`Patent Owner’s arguments to determine whether Petitioner has demonstrated
`by a preponderance of the evidence that the challenged claims would have
`been obvious under 35 U.S.C. § 103. See 35 U.S.C. § 316(e) (petitioner has
`the burden of proving unpatentability by a preponderance of the evidence).
`
`Principles of Law
`A.
`A claim is unpatentable under 35 U.S.C. § 103(a) if “the differences
`between the subject matter sought to be patented and the prior art are such
`that the subject matter as a whole would have been obvious at the time the
`invention was made to a person having ordinary skill in the art to which said
`subject matter pertains.” KSR Int’l Co. v. Teleflex Inc., 550 U.S. 398, 406
`(2007). The question of obviousness is resolved on the basis of underlying
`factual determinations, including: (1) the scope and content of the prior art;
`(2) any differences between the claimed subject matter and the prior art;
`(3) the level of skill in the art; and (4) objective evidence of nonobviousness,
`i.e., secondary considerations. See Graham v. John Deere Co., 383 U.S. 1,
`17–18 (1966).
`A patent claim “is not proved obvious merely by demonstrating that
`each of its elements was, independently, known in the prior art.” KSR, 550
`U.S. at 418. An obviousness determination based on the teachings of
`multiple references requires finding “both ‘that a skilled artisan would have
`been motivated to combine the teachings of the prior art references to
`achieve the claimed invention, and that the skilled artisan would have had a
`reasonable expectation of success in doing so.’” Intelligent Bio-Sys., Inc. v.
`Illumina Cambridge Ltd., 821 F.3d 1359, 1367–68 (Fed. Cir. 2016) (citation
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`omitted); see also KSR, 550 U.S. at 418. Further, an assertion of
`obviousness “cannot be sustained by mere conclusory statements; instead,
`there must be some articulated reasoning with some rational underpinning to
`support the legal conclusion of obviousness.” KSR, 550 U.S. at 418; In re
`NuVasive, Inc., 842 F.3d 1376, 1383 (Fed. Cir. 2016) (a finding of a
`motivation to combine “must be supported by a ‘reasoned explanation’”).
`Level of Ordinary Skill in the Art
`B.
`Factors pertinent to a determination of the level of ordinary skill in the
`art include “(1) the educational level of the inventor; (2) type of problems
`encountered in the art; (3) prior art solutions to those problems; (4) rapidity
`with which innovations are made; (5) sophistication of the technology; and
`(6) educational level of active workers in the field.” Envtl. Designs, Ltd. v.
`Union Oil Co. of Cal., 713 F.2d 693, 696 (Fed. Cir. 1983) (citing Orthopedic
`Equip. Co. v. All Orthopedic Appliances, Inc., 707 F.2d 1376, 1381–82 (Fed.
`Cir. 1983)). “Not all such factors may be present in every case, and one or
`more of these or other factors may predominate in a particular case.” Id. at
`696–697. The prior art may reflect an appropriate level of skill. Okajima v.
`Bourdeau, 261 F.3d 1350, 1354–55 (Fed. Cir. 2001).
`Petitioner asserts a person of ordinary skill in the art “would have had
`an advanced degree in electrical or computer engineering, or a related field,
`and two years working or studying in the field of design or development of
`memory systems, or a bachelor’s degree in such engineering disciplines and
`at least three years working in the field.” Pet. 8–9 (citing Ex. 1003 ¶ 67).
`Petitioner contends that additional training can substitute for educational or
`research experience, and vice versa. Id. at 8. Petitioner asserts that such a
`hypothetical person would have been familiar with the JEDEC industry
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`standards, and knowledgeable about the design and operation of
`standardized DRAM and SDRAM memory devices and memory modules
`and how they interacted with a memory controller and other parts of a
`computer system, including standard communication busses and protocols,
`such as PCI and SMBus busses and protocols. Id. at 8–9. Petitioner further
`contends that such “a hypothetical person would also have been familiar
`with the structure and operation of circuitry used to access and control
`computer memories, including sophisticated circuits such as ASICs, FPGAs,
`and CPLDs, and more low-level circuits such as tri-state buffers.” Id. at 9.
`Petitioner further asserts that such “a hypothetical person would further have
`been familiar with voltage supply requirements of such structures (e.g.,
`memory modules, memory devices, memory controller, and associated
`access and control circuitry), including voltage conversion and voltage
`regulation circuitry.” Id.
`Patent Owner indicates “[f]or the purposes of this [Response], Patent
`Owner is applying the level of ordinary skill in the art proposed by
`Petitioner” for this proceeding. Resp. 1.
`The evidence that Petitioner presents mostly applies to the educational
`level and experience of workers in the field, but also touches upon other
`factors as well, including problems and solutions in the prior art and
`complexity of the technology. See Pet. 7–8. We find Petitioner’s proposal
`is consistent with the level of ordinary skill in the art reflected by the ’918
`patent and the prior art of record, and, therefore, we adopt Petitioner’s
`proposed level of ordinary skill in the art, with the exception of the open-
`ended language “at least” which introduces ambiguity and may encompass
`skill levels beyond ordinary. See Okajima v. Bourdeau, 261 F.3d 1350,
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`1355 (Fed. Cir. 2001) (the prior art may reflect an appropriate level of skill
`in the art).
`C. Claim Construction
`We construe claim terms “using the same claim construction standard
`that would be used to construe the claim in a civil action under 35 U.S.C.
`282(b).” 37 C.F.R. § 42.100(b) (2021). There is a presumption that claim
`terms are given their ordinary and customary meaning, as would be
`understood by a person of ordinary skill in the art in the context of the
`specification. See In re Translogic Tech., Inc., 504 F.3d 1249, 1257 (Fed.
`Cir. 2007). Nonetheless, if the specification “reveal[s] a special definition
`given to a claim term by the patentee that differs from the meaning it would
`otherwise possess[,] . . . the inventor’s lexicography governs.” Phillips v.
`AWH Corp., 415 F.3d 1303, 1316 (Fed. Cir. 2005) (en banc) (citing CCS
`Fitness, Inc. v. Brunswick Corp., 288 F.3d 1359, 1366 (Fed. Cir. 2002)). “In
`determining the meaning of the disputed claim limitation, we look
`principally to the intrinsic evidence of record, examining the claim language
`itself, the written description, and the prosecution history, if in evidence.”
`DePuy Spine, Inc. v. Medtronic Sofamor Danek, Inc., 469 F.3d 1005, 1014
`(Fed. Cir. 2006) (citing Phillips, 415 F.3d at 1312–17). Only disputed claim
`terms must be construed, and then only to the extent necessary to resolve the
`controversy. See Nidec Motor Corp. v. Zhongshan Broad Ocean Motor Co.
`Matal, 868 F.3d 1013, 1017 (Fed. Cir. 2017).
`“Memory Module”
`1.
`Patent Owner contends as follows:
`The term “memory module” appears in the preamble of the
`independent claims, which provides antecedent basis for the
`same term in the body of the text. The preamble is thus limiting
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`as the District Court found after reviewing the specification in
`detail.The Court further explained that “a skilled artisan would
`understand a ‘memory module’ is distinct from, and has essential
`structural requirements not necessarily found in, other modular
`computer accessories. That includes the structure necessary to
`connect to a memory controller.
`Resp. 1–2 (citing Ex. 2032, 28; Ex.2034, 319). Patent Owner argues that the
`“court’s ruling is consistent with the specification which states in the
`Overview section that the invention is particularly ‘couplable to a memory
`controller of a host system.’” Id. at 2 (citing Ex. 1001, 1:66–67, 3:66–67).
`Patent Owner states that Petitioner “objected to the court’s finding that the
`memory module is limiting, but does not dispute the Court’[s] finding on
`what a ‘memory module’ means to a [person of ordinary skill in the art].”
`Id. (citing Ex. 2033, 4).
`As support for its argument, Patent Owner relies on a claim
`construction order issued by the District Court for the Eastern District of
`Texas, which states as follows:
`the entire patent “to gain an
`Having reviewed
`understanding of what the inventors actually invented and
`intended to encompass by the claim[s],” Catalina Mktg. Int'l, 289
`F.3d at 808–09, the Court finds the preamble limiting. While the
`claims recite many of the structural requirements of a “memory
`module,” the claims arguably read on other modular computer
`devices, such as a video card or network controller, despite no
`evidence the inventors intended to encompass such devices by
`the claims. To the contrary, as the Overview section [of the
`Court’s claim construction order] explains, the invention “is
`couplable to a memory controller of a host system,” [Ex. 1001]
`at 3:66–67 (emphasis added), not just the host system as recited
`in the claims. See also id. at 1:66–67 (“[t]he present disclosure
`relates generally to computer memory devices”). Thus, a skilled
`artisan would understand a “memory module” is distinct from,
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`and has essential structural requirements not necessarily found
`in, other modular computer accessories. That includes the
`structure necessary to connect to a memory controller. See
`Memory Systems: Cache, DRAM, Disk, Dkt. No. 76-17 at 319
`(depicting, in FIG. 7.6, a memory controller connected to two
`memory modules). Accordingly, the preambles are limiting.
`
`
`Ex. 2032, 28) (alterations in original), cited in Resp. 2.
`Patent Owner argues that Petitioner’s expert, Dr. Wolfe, testified that
`the term “memory modules” typically refers to “main memory modules,”
`which “are designed to connect to the primary memory controller for the
`purpose of holding general purpose code and data in a computer system.”
`Id. at 2 (citing Ex. 2030, 123:14–25; Ex. 2056, 100:15–101:8 (by
`2004–2005, a memory module “was intended to go into a dedicated memory
`slot and not a general-purpose IO slot”)). Patent Owner contends that the
`’918 patent’s usage of “memory module” is consistent with that
`understanding, and asserts that we should adopt the District Court’s claim
`construction, including that the claimed “memory module” includes
`structures necessary to connect to a memory controller. Id. at 2–3 (citing
`Ex. 2031 ¶¶ 51–53); accord Sur-Reply 1.
`
`In Reply, Petitioner contends that we properly found that Harris, the
`FBDIMM Standards, Amidi, and Spiers all disclose a “memory module” in
`our Institution Decision. Reply 1–2 (citing Inst. Dec. 14–15, 17–18, 34–37,
`45; Pet. 19–20, 82–83; Reply 23–26). Petitioner contends that the District
`Court’s construction did not limit “memory module” to only “main memory
`modules . . . designed to connect to the primary memory controller.” Id. at
`1–2 (emphasis in original) (citing Resp. 2; Ex. 2032, 26–28, 35; Ex. 2030,
`125:12–127:13; Ex. 2056, 100:15–101:19).
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`In Sur-Reply, Patent Owner disagrees with Petitioner’s contention that
`
`“memory module” is not limited to “main memory modules . . . designed to
`connect to the primary memory controller.” Sur-Reply 1 (emphasis in
`original) (citing Reply 1). Patent Owner argues that Petitioner’s contention
`“ignores the District Court’s finding based on intrinsic evidence—which
`[Petitioner] did not object to—that the ‘invention [i.e., the claimed memory
`module] ‘is couplable to a memory controller of a host system,’ [Ex. 1001]
`at 3:66–67 …, not just the host system as recited in the claims.”’ Id. (citing
`Ex. 2032, 28; Ex. 1001, 4:5–12, 4:14–24, 4:35–39, 4:45–51, 5:4–20, 4:36–
`50, 6:4–6, 6:25–29, 6:61–66, 7:1–4, 7:21–25, 7:29–34, 7:43–49, 7:54–57,
`21:24–25, 22:53–58, 23:19–22, 26:43–51, 23:41–44).
`
`The District Court’s Claim Construction Order (Ex. 2032) issued after
`our Institution Decision (Paper 10). Although Petitioner argued in the
`District Court litigation that the claim preambles were not limiting,
`Petitioner does not appear to maintain that argument here following the
`District Court’s determination that the preambles were limiting. Ex. 2032,
`28. Since the term is recited in both the preambles and bodies of these
`claims, there is evidence that the inventors of the ’918 patent intended the
`term to limit the claim, as the District Court determined. See Catalina Mktg.
`Int’l., Inc. v. Coolsavings,com, Inc., 289 F.3d 801, 808 (Fed. Cir. 2002)
`(citing Bell Commc’ns Rsch., Inc. v. Vitalink Communications Corp., 55
`F.3d 615, 620 (Fed.Cir.1995) (“dependence on a particular disputed
`preamble phrase for antecedent basis may limit claim scope because it
`indicates a reliance on both the preamble and claim body to define the
`claimed invention.”)).
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`We agree with Petitioner’s contention that “memory module” is not
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`limited to “main memory modules . . . designed to connect to the primary
`memory controller.” Reply 1. The ’918 patent states
`In certain embodiments, the device contains a high density
`Flash memory with a low density DRAM, wherein the DRAM is
`used as a data buffer for read/write operation. The Flash serves
`as the main memory.
`Ex. 1001, 11:3–6 (emphases added). This is the only mention of “main
`memory” in the ’918 patent. That the Flash memory serves as “main
`memory” in “certain embodiments” implies that there may be other
`embodiments in which this is not the case. Accordingly, we agree with
`Petitioner that the term “memory module” is not limited to “main memory
`modules . . . designed to connect to the primary memory controller.” See
`Reply 1.
`
`We agree with Patent Owner that the “memory module” includes
`structure to connect with a “host system” including its memory controller.
`See, e.g., Ex. 1001, code (57), 12:52–59. The claims do not mention a
`“memory controller” but they do mention that the “memory module” has an
`“interface” to connect with a “host system.” Ex. 1001, 38:19–24 (claim 1),
`39:54–59 (claim 16), 40:51–56 (claim 23). That the “memory module” has
`structure for connecting to the host system’s memory controller may thus be
`implied from the claims.
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`We agree with Petitioner that the District Court’s determination was
`that the preambles of all claims of the ’918 patent are limiting. Ex. 2032, 35.
`To the extent that the District Court’s determination construed “memory
`module” to include structure necessary to connect to a memory controller,
`our construction of “memory module” is consistent.
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`“Pre-Regulated Input Voltage”
`2.
`Claims 16–22 recite a “pre-regulated input voltage.” Ex. 1001, 39:61,
`42:23. Petitioner identifies at least two meanings for this claim term, one
`meaning within pre-determined limits and the other meaning the voltage
`must be pre-regulated on the memory board itself. Pet. 73. Petitioner
`contends that the District Court construed “pre-regulated input voltage” to
`have its plain and ordinary meaning, and rejected Samsung’s argument that
`the voltage must be pre-regulated on the memory module. Reply 20, n.3
`(citing Ex. 2032, 21–22, 34; Inst. Dec. 37–38; Ex. 2030, 268:18–270:5).
`Petitioner contends that Patent Owner’s expert does not dispute the District
`Court’s construction. Id. (citing Ex. 1075, 142:10–144:18). According to
`Petitioner, both experts agree that the V12V input to Harris can be pre-
`regulated under that construction. Reply 20 (citing id. at 5, n.2).
`Patent Owner argues that a “pre-regulated input voltage is just a
`regulated voltage provided to these voltage conversion circuits.” Resp. 38.
`Under its ordinary and plain meaning in the context of the ’918 patent,
`we understand “pre-regulated input voltage” to mean that the voltage is
`regulated before conversion to a stepped up or down level by the voltage
`converters. See Ex. 1001, code (57), 28:53–58, Fig. 16 (1110, 1112). This
`is consistent with Patent Owner’s proposed construction.
`D. Ground 1: Obviousness Over Harris and FBDIMM Standards
`Petitioner contends claims 1–3, 8, 14, 15, and 23 would have been
`obvious over the combination of Harris and FBDIMM Standards and relies
`on the Declaration of Dr. Andrew Wolfe (Ex. 1003) in support. Pet. 14–51.
`For the reasons that follow, we are persuaded that the evidence, including
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`Dr. Wolfe’s testimony, supports Petitioner’s showing and establishes by a
`preponderance of the evidence that these claims are unpatentable.
`Harris (Ex. 1023)
`1.
`Harris is titled “Voltage Distribution System and Method for a
`Memory Assembly.” Ex. 1023, code (54). Harris was published as U.S.
`Patent Pub. No. 2006/0174140 A1 on August 3, 2006. Petitioner contends
`Harris is prior art under § 102(a). Pet. 10.
`Harris’s Figure 1A is reproduced below.
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`As shown in Figure 1A, Harris discloses a memory module 100A including
`on-board regulator 102 for converting an externally supplied voltage 104 to
`appropriate local voltage levels 106 (Vcc), 108 (Vdd), such as 0.5V to 3.5V.
`Ex. 1023, code (57), ¶¶ 9–10. Voltage 106 is supplied to buffer/logic
`component 112 which may be connected to a memory controller via
`interface 114 and daisy-chained with other memory assemblies via interface
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`116. Id. ¶ 9. Voltage 108 powers memory devices 110-1 to 110-N. Id. The
`memory module 100A may be a Dual In-Line Memory Modules (DIMM)
`wherein each of the memory devices 100-1 to 100-N comprises a Double
`Data Rate (DDR), DDR2, or DDR3 device. Id. The memory module 100A
`may be an unbuffered, registered or fully buffered DIMM. Id.
`FBDIMM Standards (Exs. 1027, 1028)
`2.
`In March 2007, the Joint Electron Device Engineering Council
`(JEDEC) published standards for Fully Buffered DIMM (FBDIMM)
`memory modules titled “JESD82-20” (Ex. 1027) and “JESD205”
`(Ex. 1028). Ex. 1029; Ex. 1003 ¶¶ 134–136. Petitioner refers to these
`standards collectively as the “FBDIMM Standards.” Pet. 11. Petitioner
`contends the FBDIMM Standards are prior art under § 102(a). Id.
`The FBDIMM Standards specify voltages for components on the
`memory module as follows:
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`Ex. 1028, 9. The above table shows values for supply voltages including
`DRAM VDD, AMB VCC, DRAM interface VTT, and VDDSPD. The
`FBDIMMM Standards further specify the following voltages for various
`power supplies:
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`Ex. 1027, 83. The table above sets voltage levels for power supplies VCC,
`VCCFBD, VDD, VSS, and VDDSPD.
`3. Motivation to Combine
`Petitioner contends that a person of ordinary skill in the art would
`have been motivated to combine Harris with the FBDIMM Standards with a
`reasonable expectation of success because Harris states that its Figure 1A
`may be a “fully buffered DIMM” (FBDIMM or FBD). Pet. 16 (citing
`Ex. 1023 ¶¶ 9–13; Ex. 1003 ¶¶ 158–165). Petitioner contends that a person
`of ordinary skill in the art would have understood that this type of DIMM is
`standardized in JEDEC’s FBDIMM Standards and thus would naturally look
`to them for more details about the “fully buffered DIMM” that Harris
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`describes as compatible with his on-board voltage regulator module (VRM).
`Id.
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`To explain its combination, Petitioner provides the following table:
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`Pet. 27. The tab