`
`
`(51) Int. Cl.5
`H 03 F
`H 01 P
`H 03 F
`
`3/60
`5/08
`3/19
`
`
`
`
`
`(54) Title of the invention
`
`
`(72) Inventor
`
`(71) Applicant
`(74) Agent
`
`(11) Japanese Unexamined Patent
`(19) Japan Patent Office (JP)
`Application Publication Number
`(12) Japanese Unexamined Patent
`H4-40702
`Application Publication (A)
`Identification codes
`JPO file numbers
`(43) Publication Date: February 12, 1992
`
`8836-5J
`
`
`7741-5J
`
`
`8326-5J
`
`Request for examination Not yet requested Number of claims 1
`
`
`
`L
`
`(Total of 7 pages)
`
`MICROWAVE CIRCUIT
`(21) Japanese Patent Application No.
`(22) Date of Application
`Toshihiko YOSHIMASU
`
` H2-148933
`June 6, 1990
`℅ Sharp Corporation
`22-22, Nagaike-cho, Abeno-ku, Osaka
`22-22, Nagaike-cho, Abeno-ku, Osaka
`and 2 others
`
`Sharp Corporation
`Patent Attorney Hisao FUKAMI
`
`
`
`
`
`
`
`
`
`
`
`
`SPECIFICATION
`1. Title of the Invention
` Microwave Circuit
`
`2. Claim
`
`A microwave circuit having formed upon a
`substrate: an active element for amplifying a
`microwave input signal, and an impedance matching
`circuit for matching the input-output impedance of the
`active element to the impedance of an adjacent input-
`output circuit, wherein:
`
`the impedance matching circuit comprises:
`
`
`an input transmission line for the purpose of
`transmitting the microwave input signal to the active
`element;
`
`
`an output transmission line for the purpose of
`transmitting the microwave output signal from the
`active element;
`
`
`a diode that is connected in parallel to the
`active element and that compensates for changes in the
`capacitance of the active element; and
`
`
`a control voltage supplying means for the
`purpose of supplying a control voltage to the active
`element and the diode such that the capacitance of the
`active element and the capacitance of the diode vary
`inversely to each other.
`
`
`3. Detailed Description of the Invention
`[Field of Industrial Application]
`The present invention relates to microwave
`
`circuits and particularly
`to microwave circuits
`equipped with an active element that amplifies a
`microwave input signal and an impedance matching
`circuit that matches the input-output impedance of the
`active element to the impedance of an adjacent input-
`output circuit.
`
`[Related Art and Problems the Invention is Intended to
`Solve]
`
`In recent years, with the advancement of the
`development of field effect transistors (FETs) made of
`GaAs or InP as well as modulation doped field effect
`transistors, attempts
`to make
`their
`transistors,
`matching circuits, and bias circuits monolithic upon a
`semiconductor substrate have been taking place
`actively in many labs. Such monolithic ICs are called
`MMICs (monolithic microwave integrated circuits)
`and are more compact and higher in reliability than the
`
`hybrid microwave integrated circuits (MICs) mainly
`used in microwave applications up until now.
`
`
`
`
`– 5 –
`
`Page 1 of 15
`
`GOOGLE EXHIBIT 1006
`
`

`

`JP H4-40702 A (2)
`
`comprises: an input transmission line 2 connected
`between the input terminal 10 and the gate of the FET
`1, and a capacitor 70 connected between the input
`terminal 10 and GND. The matching circuit 17
`comprises: an output transmission line 3 connected
`between the output terminal 11 and the drain of the
`FET 1; and a capacitor 12 connected between the
`output terminal 11 and GND. The aforementioned gate
`bias circuit 18 comprises: a bias terminal 8 for
`supplying a DC voltage to the gate of the FET 1, a
`capacitor 6 connected between this terminal 8 and
`GND, and a choke coil 4 connected between the bias
`terminal 8 and the input transmission line 2. In
`addition, the drain voltage impressing circuit 19
`comprises: a bias terminal 9 for the purpose of
`supplying a DC voltage to the drain of the FET 1; a
`capacitor 7; and a choke coil 5.
`Note that, in this circuit, when the one in FIG. 5
`
`is used as the FET 1, these circuit constants are set as
`follows.
`characteristic
`line 2:
`transmission
`
`Input
`impedance 50 Ω, electrical
`length 67 degrees
`(electrical length θ = ℓ/λ·π, where ℓ is the physical
`length of the line and λ is the wavelength within the
`line.
`
`Input circuit 70: 1.0 pF
`line 3: characteristic
`
`Output
`transmission
`impedance 50 Ω, electrical length 95 degrees
`
`Output-side capacitor 12: 0.35 pF
`
`The gain at 12 GHz of an MMIC amplifier in the
`situation in which the circuit constants as described
`above are set is 18.8 dB, and the input-output
`reflection coefficient is substantially 0.
`
`However, there is dispersion in the gate length as
`described above, and as a result, when the input
`capacitance Cin within the wafer plane is distributed
`within the range of 0.18–0.22 pF, there is dispersion in
`S11 at 12 GHz. The appearance of this dispersion is
`shown in FIG. 4. In FIG. 4, the points A, B, and C
`correspond to Cin = 0.22, 0.20, and 0.18 pF,
`respectively. In addition, Aʹ, Bʹ,
`
`low-pass noise
`types of
`Consequently, various
`amplifiers, mixers, oscillators, and other MMICs that
`operate over frequencies from the UHF band to the
`microwave band have been developed at various labs,
`contributing to the miniaturization of microwave
`transceivers and the like.
` With an MMIC, active elements (FETs and
`bipolar transistors and the like) along with microwave
`lines, capacitors, resistors, and other passive elements
`are integrated in a monolithic manner upon a
`semiconductor substrate. At
`this
`time, because
`microwave lines and capacitors have large physical
`sizes, by using semiconductor processes they can be
`fabricated with virtually no dispersion. However,
`because the active elements such as FETs and bipolar
`transistors and the like require fine processing,
`dispersion in element characteristics is unavoidable.
`Specifically, in an FET, because advances in making
`the gate electrodes thinner have been made in recent
`years, the gate length has been reduced to 0.1 μm.
`However, because it is difficult to fabricate a 0.1 μm
`gate electrode with good reproducibility, a certain
`amount of dispersion arises. Because the drain current
`of an FET is inversely proportional to the gate length,
`in an operating state in which the drain current is
`constant, it is necessary to vary the operating voltage
`of the gate with respect to the gate length. In addition,
`because the gate length and gate capacitance are
`roughly proportional, the input impedance of the FET
`is governed by the gate length.
`
`FIG. 5 is a diagram illustrating the frequency
`characteristics (1–12 GHz) of the S-parameters at a
`gate length of approximately 0.1 μm and gate width of
`250 μm. In this figure, 50 is the S11 component of the
`S-parameters and 51 is the S22 component of the S-
`parameters. As
`shown
`in
`these
`frequency
`characteristics, the input side S11 of the FET can be
`expressed as the resistance component Rin and the
`capacitance component Cin connected in series; in
`addition, the output side S22 can be expressed as the
`the capacitance
`resistance component Rout and
`component Cout connected in parallel. Moreover, in
`this FET, Rin is 8 Ω, Cin is 0.2 pF, Rout is 150 Ω, and
`Cout is 0.1 pF, while the transconductance gm is 60 mS.
`FIG. 6 illustrates an equivalent circuit of the
`aforementioned FET.
`
`FIG. 7 is a circuit diagram illustrating a
`conventional example of an MMIC amplifier in the 12
`GHz band using the aforementioned FET. This MMIC
`amplifier comprises an FET 1 with its source
`grounded, an input terminal 10, an output terminal 11,
`an input matching circuit 16, an output matching
`circuit 17, a gate bias circuit 18 for impressing a bias
`voltage on the FET 1, and a drain voltage impressing
`circuit 19 for impressing the drain voltage on the FET
`1. The aforementioned input matching circuit 16
`
`
`
`– 6 –
`
`Page 2 of 15
`
`

`

`JP H4-40702 A (3)
`
`an output transmission line for the purpose of
`
`
`transmitting the microwave output signal from the
`active element;
`
`
`a diode that is connected in parallel to the
`active element and that compensates for changes in the
`capacitance of the active element; and
`
`
`a control voltage supplying means for the
`purpose of supplying a control voltage to the active
`element and the diode such that the capacitance of the
`active element and the capacitance of the diode vary
`inversely to each other.
`
`[Operation]
`
`According to the present invention of the
`aforementioned constitution, because the diode is
`connected in parallel with the active element, by
`varying
`the control voltage of
`the diode,
`the
`capacitance of the diode and the active element
`changes, and at the same time, the current of the
`aforementioned active element also changes. Because
`this change in capacitance has an inverse relationship
`in the increase and decrease between the diode and the
`active element,
`in
`the situation
`in which
`the
`capacitance of the active element is less than a desired
`value, the control voltage can be adjusted higher to
`make the capacitance of the diode greater; conversely,
`if the capacitance of the active element is greater than
`a desired value, then the capacitance of the diode
`becomes small by adjusting the control voltage to be
`smaller. Thereby, it is possible to perform impedance
`matching in a self-matching manner with respect to
`dispersion in the capacitance of the active element.
`
`[Working Examples]
`
`The present invention is explained in detail
`below, with reference to working examples.
`
`FIG. 1 is a circuit diagram showing a first
`working example of the present invention. With
`reference to this figure, the difference between the
`microwave circuit of this working example and the
`microwave circuit of FIG. 7 lies in the points that: a
`diode 13, for the purpose of constituting the input
`matching circuit together with transmission line 2, is
`connected between input terminal 10 and the capacitor
`14, which is shorted in the microwave band; and a bias
`terminal 15 for impressing a control voltage for the
`purpose of impedance matching is connected to the
`anode of the diode 13.
`
`The aforementioned diode 13 used is one that has
`a Schottky barrier between an n-type semiconductor
`and metal (for example, Al, Ti). Here, the carrier
`concentration of
`the n-type semiconductor
`is
`approximately 3 × 1017 cm–3
`
`0.20
`18.8
`0.00
`
`0.22
`17.2
`0.36
`
`and Cʹ (the white circles ○) are the complex conjugate
`impedances of the points A, B, and C, respectively.
`
`As shown in FIG. 4, even though there is
`dispersion in S11, the matching circuit within the
`MMIC is set based on point B, and therefore a problem
`arises in that the S11 matching loss increases the further
`the shift from B.
`
`In the circuit of FIG. 7, Table 1 shows the result
`of the calculation of the gain and the input reflection
`coefficient of the MMIC when there are dispersions of
`the Cin of the FET 1 of 0.18, 0.20, and 0.22 pF. Note
`that, to simplify the discussion here, only Cin is varied
`and the other equivalent circuit constants are kept
`constant. In addition, the input reflection coefficient is
`the reflection coefficient when the FET 1 is viewed
`from terminal D in FIG. 7.
`Table 1
`0.18
`18.8
`0.41
`
`Cin (pF)
`Gain (dB)
`Input reflection
`coefficient
`In this manner, because adversely there is
`
`dispersion in the microwave characteristics of the
`MMIC depending on the dispersion of the gate length,
`it is necessary to adjust the matching circuit of the
`MMIC in accordance with the dispersion of the
`microwave characteristics of
`the MMIC post-
`production. However, to perform adjustments of the
`matching circuit of the MMIC post-production, it
`would be necessary to change the length or width of
`the input transmission line 2 or the output transmission
`line, or change the capacitors 12 or 70, but this is
`impossible. This is the cause of drops in MMIC
`performance or yield.
`in
`
`The present
`invention was conceived
`consideration of the aforementioned problems and has
`as its object to provide a microwave circuit that can
`prevent such drops in MMIC performance or yield
`even with dispersion
`in active elements, and
`particularly even with dispersion in the microwave
`characteristics.
`
`[Means for Solving the Problem]
`
`The microwave circuit according to the present
`invention
`for
`the purpose of achieving
`the
`aforementioned object is:
`
`a microwave circuit having formed upon a
`substrate: an active element for amplifying a
`microwave input signal, and an impedance matching
`circuit for matching the input-output impedance of the
`active element to the impedance of an adjacent input-
`output circuit, wherein:
`the impedance matching circuit comprises:
`
`
`
`an input transmission line for the purpose of
`transmitting the microwave input signal to the active
`element;
`
`
`
`– 7 –
`
`Page 3 of 15
`
`

`

`JP H4-40702 A (4)
`
`In the conventional example shown in FIG. 7,
`
`with regard to the reflection coefficient when the node
`Dʹ is viewed from the left side, even if the Cin (Vgs) of
`the FET varies, it is constantly at point B; therefore, in
`the situation in which Cin becomes 0.18 pF (Vgs = –0.7
`V), the distance from points Bʹ to Cʹ in FIG. 4 becomes
`the matching loss; in addition, in the situation in which
`Cin becomes 0.22 pF (Vgs = –0.5 V), the distance from
`points Bʹ to Aʹ in FIG. 4 becomes the matching loss.
`Incidentally, in this working example, at Cin =
`
`0.18 pF, the distance from points C1 to Cʹ in FIG. 4
`becomes the matching loss; in addition, at Cin = 0.22
`pF, the distance from points A1 to Aʹ in FIG. 4
`becomes the matching loss; therefore, in comparison
`with the conventional example, the matching loss
`becomes smaller. Comparing the above concretely
`yields Table 2. Note that the input reflection
`coefficient is that when viewing the FET side from the
`terminal 10 in FIG. 1 and FIG. 7. In addition, the
`values of the FET parameters are calculated by fixing
`all parameters other than Cin; however, the relative
`values of the gains and the input reflection coefficients
`between the conventional example and the present
`working example did not show large differences.
`Table 2(a)
`
`0.18
`Conventional
`18.8
`example
`The present
`working example 19.5
`
`Cin (pF)
`Gain
`(dB)
`
`
`0.20
`18.8
`
`0.22
`17.2
`
`18.8
`
`17.8
`
`
`
`Cin (pF)
`Input
`reflection
`coefficient
`
`
`0.18 0.20 0.22
`
`0.41 0.00 0.36
`
`0.14 0.00 0.12
`
`Table 2(b)
`
`Conventional
`example
`The present
`working
`example
`As is clear from the tables above, the present
`
`working example is superior to the conventional
`example in both gain and input reflection coefficient,
`and thus the effect of using the diode 13 to reduce the
`matching loss appears.
`
`is
`surface area
`the Schottky electrode
`and
`approximately 1,000 μm2. The Schottky electrode of
`the diode 13 is connected to the bias terminal 15, and
`the other ohmic electrode is connected to the input
`transmission line 2.
`
`To the aforementioned bias terminal 15 is
`impressed a voltage Va lower than the gate-source
`voltage Vgs of the FET 1 (in the situation of a
`MESFET, typically 0 V to –1 V); in this working
`example, Va is set to –1.5 V.
`
`By constituting an input matching circuit as
`described above, the bias voltage Va is set to be lower
`than the gate-source voltage Vgs; therefore, by varying
`the Vgs, the capacitance of the diode 13 and the input
`capacitance of the FET are varied inversely.
`
`Note that, even in the situation of using a diode
`other than a diode that uses a Schottky barrier between
`an n-type semiconductor and metal, one would
`connect the diode such that the increase/decrease in
`the capacitance of the active element and the
`increase/decrease in the capacitance of the diode
`become inverse, thereby setting the control voltage Va.
`The aforementioned working example will now
`
`be described in greater detail, with z reference to the
`diode voltage/capacitance characteristic diagram
`shown in FIG. 3.
` When Rin = 8 Ω and Cin = 0.2 pF, the reflection
`coefficient (S11), viewing the FET from D in FIG. 1,
`becomes point B in FIG. 4, as described before. In
`order to match this S11, the characteristic impedance of
`the input transmission line 2 is 50 Ω, the electrical
`length is 67 degrees, and the capacitance of the diode
`is 1.0 pF. At this time, the reflection coefficient when
`viewing the diode side from D becomes the point Bʹ in
`FIG. 4, and therefore complex conjugate matching is
`achieved. However, the gate length of the FET 1 has
`dispersion, so Cin becomes 0.18–0.22 pF; and at this
`time, if the gate-source voltage Vgs becomes –0.5 V to
`–0.7 V respectively, then the S11 has dispersion over
`the range of points A–C in FIG. 4. However, in this
`working example, the diode 13 is used in this
`impedance matching circuit, so together with the
`change in Vgs, the capacitance of the diode 13 varies as
`shown in FIG. 3. That is, because of the dispersion in
`the gate length of the FET 1, Vgs varies from –0.5 V to
`–0.7 V; at that time, the capacitance of the diode 13,
`as shown by characteristic curve 31 in FIG. 3, becomes
`approximately 0.8–1.3 pF. Accordingly, when Vgs is –
`0.5, –0.6, and –0.7 V, the reflection coefficients when
`viewing the diode side from D in FIG. 1 become the
`points A1, B1, and C1 (× symbols) in FIG. 4. In
`addition, the points Aʹ, Bʹ, and Cʹ in FIG. 4 are the
`reflection coefficients
`that
`impart
`the complex
`conjugate impedance of S11 of the FET at Vgs of –0.5,
`–0.6, and –0.7 V.
`
`
`
`– 8 –
`
`Page 4 of 15
`
`

`

`JP H4-40702 A (5)
`
`capacitance, the matching losses become small, and
`therefore the meritorious effect is obtained in that it is
`applicable not only to small-signal amplifiers but also
`to a wide range of microwave circuits such as large-
`signal amplifiers and voltage-controlled variable gain
`amplifiers.
`
`4. Brief Description of the Drawings
`
`FIG. 1 is a circuit diagram of an MMIC amplifier
`illustrating one working example of the present
`invention; FIG. 2 is a circuit diagram of an MMIC
`amplifier illustrating another working example of the
`present invention; FIG. 3 is a diagram illustrating the
`voltage/capacitance characteristic of a diode; FIG. 4 is
`a diagram illustrating the dispersion in S11 and the
`reflection coefficient of the matching circuit with
`respect to the dispersion in the input capacitance of the
`FET; FIG. 5 is a diagram illustrating the frequency
`characteristics of S11 and S22 of the FET; FIG. 6 is an
`FET equivalent circuit diagram; and FIG. 7 is a circuit
`diagram illustrating a conventional example of an
`MMIC amplifier.
`
`In the drawings, 1 is an FET, 2 is an input
`transmission line, 3 is an output transmission line, 13
`is a diode, and 15 is a control voltage-impressing
`terminal.
`
`
`FIG. 1
`
`
`FIG. 2
`
`
`
`
`
`the
`if one appropriately selects
`Accordingly,
`capacitance of the diode 13 in the matching circuit, the
`dispersion in the gate capacitance of the FET is
`absorbed by the diode 13, thus acting to prevent
`worsening of the gain and reflection coefficient of the
`MMIC, and the yield of the MMIC also increases.
`
`FIG. 2 is a circuit diagram showing another
`working example of the present invention. The
`difference from the aforementioned working example
`in FIG. 1 lies in the points that a lower part 20 is
`connected to the input transmission line 2, a lower part
`21 is connected to the output transmission line 3, and
`these lower parts 20 and 21 also serve as the bias
`circuits of the FET 1. In the present working example,
`the diode 13 is connected in parallel to the FET 1
`without the input and output transmission lines 2 and
`3 interposed. Accordingly, when the gate activation
`voltage Vgs varies, by selecting the capacitance of the
`diode so as to compensate for change in the input
`capacitance of the FET 1, virtually no change arises in
`the capacitance at point E in FIG. 2, so there is no need
`to adjust the matching circuit. In addition, because the
`absolute value of the change in capacitance of the FET
`1 is small, the surface area of the diode 13 that
`compensates such can also be small. Moreover, the
`change in capacitance of the FET 1 and the diode 13
`occurs in the same phase, in contrast to FIG. 1, so even
`if a large signal is input from the input terminal 10, the
`diode 13 can compensate for the capacitance of the
`FET 1. Consequently, the microwave circuit of this
`FIG. 2 is applicable for power supplies with large
`amplitudes.
`Note that, in the aforementioned FIG. 1 and FIG.
`
`2, the present invention was explained with a focus on
`the input capacitance of the FET, but the present
`invention is in no way limited thereto but rather is also
`applicable to the FET output capacitance, bipolar
`transistors, or other active elements; in addition, the
`diode is not limited to one that uses a Schottky junction
`between the n-type semiconductor and metal, but
`rather it is also possible to utilize pn junction diodes
`and the like. In addition, the present invention is
`applicable not only to MMICs but rather the same
`effects can be obtained when applied to hybrid
`integrated circuits.
`
`[Effects of the Invention]
`
`According to the present invention as explained
`above, with a diode connected in parallel with an
`active element and a control voltage impressed on the
`diode and the active element, it is possible to
`compensate for dispersion in the capacitance of the
`active element, and therefore the effects of increasing
`the performance and yield of the MMIC are obtained.
`In addition, even if the bias point of the active element
`should change, by the diode compensating the
`
`
`
`– 9 –
`
`Page 5 of 15
`
`

`

`FIG. 3
`
`FIG. 6
`
`JP H4-40702 A (6)
`
`
`
`
`
`August 20, 1990
`[Seal]
`
`
`
`
`
`
`FIG. 4
`
`
`FIG. 5
`
`[Key]
`
`1. Gate
`
`2. Source
`
`3. Drain
`
`4. Source
`
`
`FIG. 7
`
`
`
`
`Amendment
`
`Capacitance (pF)
`
`To: Director, Japan Patent Office
`1. Indication of the Matter
`Japanese Patent Application No. H2-148933
`
`
`2. Title of the Invention
` Microwave Circuit
`
`3. Amending Person
`Patent Applicant
`
`Relationship to Matter
`
`Name: (504) Sharp Corporation
`
`Address: 2-22, Nagaike-cho, Abeno-ku, Osaka
`
`Representative:
`Haruo TSUJI
`
`4. Agent
`
`Name: Hisao FUKAMI, Patent Attorney (6474)
`
`
`
`
`2-1-29, Minamimori-cho, Kita-ku, Osaka
`
` Telephone No. (06) 361-2021
`
`
`
`
`
`Self-amended
`
`
`[Seal: Osuda][Seal:
`
`8/22/1990]
`
`Patent
`
`Office,
`
`[Key]
`
`1.
`
`Increasing frequency
`
`
`
`
`
`– 10 –
`
`Page 6 of 15
`
`

`

`6. Subject of Amendment
`
`Detailed Description of the Invention
`
`7. Content of Amendment
`
`(1) On page 3, line 2 of the Specification, amend
`“low-pass noise amplifier” to read “low noise
`amplifier.”
`(2) On page 11, line 20 of the Specification,
`delete “z.”
`(3) On page 12, line 2 of the Specification,
`amend “D in FIG. 1” to read “point D in FIG.
`1.”
`
`
`
`
`
`JP H4-40702 A (7)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`End
`
`
`
`
`
`– 11 –
`
`Page 7 of 15
`
`

`

`I, Alan Siegrist, declare as follows:
`
`1.
`
`2.
`
`3.
`
`4.
`
`5.
`
`6.
`
`I am over 21 years of age and am competent to make this declaration.
`
`I am a native speaker ofEnglish.
`
`I am fluent in Japanese.
`
`I have 25 years of experience translating Japanese to English.
`
`I translated the document "JP4-040702(A)" from Japanese to English.
`
`I certify that the translation of the document "JP4-040702(A)" is, to
`
`the best of my knowledge, a true and accurate translation from Japanese to English.
`
`7.
`
`In signing this declaration, I understand that the translation and this
`
`declaration may be filed as evidence in a contested case. I acknowledge that I may
`
`be subject to cross-examination within the United States.
`
`8.
`
`I declare under penalty of perjury that all statements made herein are
`
`true and accurate to the best of my knowledge and belief, and that these statements
`
`were made with the knowledge that willful false statements and the like so made
`
`are punishable by fine or imprisonment, or both, under Section 1001 ofTitle 18 of
`
`the United States Code.
`
`Executed: February 4, 2022
`
`
`
`By:_[@ ___ _
`
`Alan Siegrist
`
`Page 8 of 15
`
`

`

`@OAA
`
`at F CJ P)
`
`@ 5 a oh A BA
`
`© & Be at BR CA)
`
`4— 40702
`
`TALE
`6dInt. C1. *
`8836—5 J
`3/60
`HO3 F
`7741-5 J
`5/08
`H O01 P
`HOS F
`3/19
`&326-—-5 J
`BAK #AeK BKAOM 1
`(47H)
`
`
`mola
`
`L
`
`@2B8 7FEak 4 2F(1992) 2 A128
`
`GQEHOSR wiz oe
`
`@ 32—148933
`@t
`HK #2(199)6H66
`
`Qe WF a i
`
`Ff KAAPEREe225 Vr eeaH
`Al
`@it BA yar—T7Re Sate ARABTeeSkET22H225
`@it
`HB A Ht BR ABB A24
`
`mm
`
`—& 8 F
`
`3. PHROR i h
`
`1. RUAOEK
`vyi70kER
`
`2. FR RORD
`
`(HRL OAR 4)
`ART PT ORBRICML. Beri 70
`RRP SMETSebRT LL HBRFOAMT
`
`THP7FOMAHABSEBRTELXORERT
`
`4¥U-F DAREMET SAMAR OF YE
`
`&. WBE FOAHATY EK YY REMERT SE
`
`FvRUBSeH EK HOTTY E-FfY ARAMA
`
`AMABBOY ESF YARBASHEKHDO
`
`BteMirkwr(7oRABEMTS.
`
`tute SVYABSCHBLMNBRKCB RANK
`
`[ERORRECRMS MRL EGET SRB)
`
`470M ER CH > T.
`
`bRiavev-F vy A2zRBeeBE.
`
`HE. GaAs MPI nPREMBHL IT SRF
`
`MRR SY YAP CAF, FETTER) PER
`
`ze 7 OMANABESELRRBRF CR RATS
`
`K-TFRAWMR PSY YR FP ORRSK BGR ON,
`
`KMOOANRABRC.
`
`EnSOPS YUVA ERAABOC NIT ARR
`
`LICE BRT RPSOTA PT ORMHARS ERE
`
`SEM EME LIE Vey PIE SRSHSM
`
`TARHOHARBAREL.
`
`PRAKFMOATHSZ, IDES V He FICS
`
`FREER TR RACRR An, FRARBRS
`
`RHMMIC (Monolithic Micro
`
`ORERILEMET ES I4—-—FE.
`
`wave
`
`Integrated Circui
`
`bicmMRFOBRBL LEY ta - FORE
`
`t) kin, tHe tre 7oeeCEK KKH
`
`PRIMI RETSLIRERMBRFS LO
`
`Twhoad TV
`
`FAA -FRADRELKRETSEOOMAEE
`
`Microwave
`
`»y Kv7a¢ 27 oR RRR COMIC:
`Cc
`
`Integrated
`
`HEFRLEAC.
`
`irceuit) KANTPPCRBHEC ANT
`
`Page 9 of 15
`
`Page 9 of 15
`
`

`

`13M ¥F 4-40702 (2)
`
`SB, CORRS, UH FRSC VRE ES RRR
`
`ERK. PHRF - SRR RTE AR,
`
`CHT SE * CORRE SMBS. ite - CR
`
`FET@OAAAY EF VAUF-bTREEBS
`
`RALUOMMI CHARCMREhH. writ7o
`
`HEILAS,
`
`HESABTCOPMLCMML TUS,
`
`MoM, eh eRHMO. Lem. F-— bw
`
`MMIC, SRAER ECB RT CFE
`
`FOuxemOSHtFze -F ORME C1 ~1 2
`
`TeseqP-—-ShIYVVAPEY) ETA 7OUR
`
`GHz) €mee MTHS, MRT. FO,
`
`BR. SREPTHRN YOSEF S/S UY ye 2
`
`SSSA -FOSLIUMRG. F128 8AFA-F
`
`MMS. COLE, TAFT ORMB CS Rit
`
`OS22RHF7 ER. _OHBRMHBAEKRANS
`
`MRA AKAD AD, KBR OAS
`
`TEC FETOAAMS1l1li*Q, HARKHRin
`
`Bent, PSTRERREAEN CNTHEA.
`
`CBERAC nOBARRE LT. ER. AA
`
`LiL, BMMERITOFETP RAH K- Fh
`
`MS22UEARPRouttAeestCout
`
`AFMECITRMMLMBRENALH, RTH
`
`OmARREL TRL emcees. ELT.
`
`B2eLYSLTbWE TNT LES. RAMEE,
`
`COFETtTARingexgsQ, CinwO. 2p
`
`FETCHES —-
`
`+} RROMMILMBS, 7
`
`F. Rout#150R2. Cout#O. TPF
`
`PROO.
`
`leumeCHMeENnTW 4, LHL,
`
`CHO. bhFYARDY HAF YAgmMAEGoOMS
`
`0.
`
`lum@—-}+}MStERH SS Bit Sas
`
`CHE, LPFETOSHMARBERE HIRT.
`
`CHAM CTHE OL FYVOTSDT REECE SA. FE
`
`MT RMMALE PETE AVAL 2GHzHOM
`
`TOFU 4 YORI. F-FRERBREAT SR,
`
`MI CHR BORRAE RIOR CTAS, OO
`
`Fuea > RRM -EOBPRM CI. rR RE
`
`MM 1 CHM Bit, vy AOR ENR FET I
`
`WLP -hOMPRERE Ree esHEMES,
`
`fH. ANAMFI OL. HARMFI LC. ABS
`
`GR16 2. HARSERBI7T4. FETIOF
`
`SHOSCOEPALAEBSaKi. (OBR ERG
`
`-hEAGC FABEFESR AR HOP-— bh ANAT
`
`KROKVLREANS,
`
`ABB1l8t+. FETIOF LAY REAM
`
`AF RABR2 - BH ye ry nb Ok,
`
`SEHOOFV A L-REEMMARBII9LtAG, £
`
`BSHRtGTM (MRAM R AAC HKLY Ase at
`
`PAAR AGB 1 G6. AAMFIOLFET1
`
`HO. LE RBOMBHERS. (RMB AOKE
`
`OP-SLOMCRRANAANERBB2. 5
`
`THE,
`
`SUAAMTIOLGNDLOMiicRBannrs
`
`AAMBTO: 1. OpF
`
`BT0¢t80. BERIT. HAM 11
`
`HARRABS HY E-yy-agane,
`
`ZFETIOFVAYLLOMRRRANKHAE
`
`BRnmme9 5
`
`MRR. BLOUOMAMTLLEGNDE omic
`
`HAMM 2:0. S5pF
`
`RRANABRL2L&etab, bev obser sr
`
`LROLACMHRERERELRRAOMMI
`
`ABKB1lSit, FETIOF—-bK BREESE KH
`
`CHMBOL2GHz~. KR BU SABiL1a. 8d
`
`BPSRHOORA TAMFE LL. CHMBTELG
`
`BCH. AMARMAMEMITO THES.
`
`NDOMERRMANKF SYK EL STFA
`
`LoOLEHS. MReLAC LC eb eesS
`
`MPS cAARARR2LOMcRRa NSF a
`—-73a¢4Nd4t2Bb, EXF LA YEE DE
`
`DH. COR RY. HA TAABEC nao,
`
`18~0. 22pFOMBKC AHL AEFSL,
`
`BlQOMFETIOFKLA LC BMERESReRT
`
`12GHzrTOSlltFsa¢ renews, =
`
`SROHOONAPTABFIOL. Fe tv yxyT er F
`
`OTIC MFEMABDEKART. BAM OMT,
`
`s~7374WN5 Leet Ss,
`
`A.
`
`BB, CRH#EnHENCin=0. 22, 0.
`
`2S. COMBE SY TFETIAL TERR
`
`20, 0. L@8pFisGee 4s. EX. A”,
`
`B
`
`Page 10 of 15
`
`Page 10 of 15
`
`

`

`M-F 4-40702 (3)
`
`"|
`
`CC’
`
`(BROOM) BENFHA, B, CH
`
`MMI CHET IP ORRH OW SORE EL
`
`OMB YESS VRERT.
`
`TMM COBSHRBERBEL BIN ST,
`
`PAMCRRANSCECSLiwx#We ot kb
`
`Er 4ae, MMI CHR BSHRORR ETE
`
`pirdboet, MMICHORSE BREAK EA
`
`Sid. ADRBRRB 2 PHDERRBORSP
`
`WURBSZHTOSOT. SILL. BESEOF
`
`Metro. R12. TOSRA SHES
`
`HEONTHAOAMRMMT SL SBME
`
`nH. RUM THES, COLEUMMICORMP
`
`Se
`
`PROFETSPZMBLEaATHER,
`
`BT MORRMIBIT. FETIMCin#xO
`
`ARO LIKES TCU AHKEOTHD.
`
`1B. 0. 20.0. 22pFé&Woavrece#
`
`WMEERFOUS Te. Re ert Pr, oORHE MTS
`
`OMMICOMBCAARHAMOH MHEAEX
`
`PUTEMMICORMPHRBOOETERN SS
`
`Licmt, MH. LITKMS EMRE TSZASD,
`
`ENMTHATIT ORR ERHRTSIOLCERH |
`
`CinOsASR(LE+. EDHMOSHRARERI
`
`ata,
`
`—#tL TS. EK. AARH AMET HO
`
`[RBteRT SeoHoOFR]
`
`MFEDPEFETIFERERARMCHES~.
`
` t. 36
`
`LO E9K, F-+}HROWS DSR L2TMM
`
`LEP EMRIZAHORRMI RSET TD
`
`OD ok ERS it,
`
`TIP ORANESE MRT EKHOORBRT
`
`&. MRF OAMHATY EK YR ERMETS
`
`AHABBOAY EHF YACRBASHEZROO
`
`4vU-FVYAREGHRBLHARRC ER ENRY
`
`LCOvt 7 OREM SGDUTLEAKAD,
`
`470RORTH2T.
`
`bitte t-*YARSGERIL.
`
`ECD. POMRMETOSEMAMAL OAS
`
`T{PURAABSELICEMRT REBT S
`
`WHEKHRAA BES DSC REPS CECK As
`
`RHOAARRABL,
`
`T. FAM FORBW Ps CUS, THEEY,
`
`EIGER EF PO GOTHA PT ORMAAEEEH
`
`HEE FOR BOW STEM LTBCRASE
`
`tTSZEHOHAERRBE.
`
`AYR-—SFYABAETIA TCL MDH ETS.
`
`LPB RFR RAK Ree. LERBRT
`
`CX ie Ht )
`
`OBRBRILERETSSA4—-FE,Q
`
`hie RTOSEL Lyf tA - FORE
`
`PEVCPMKBIEPFSLACLC RHETT ELS
`
`EF. SMART CREME RAC ATS.
`1 KR O-LBMERTORBNTH SZ.
`PMtBAlt. CORMBMOTT 7 ORewRS
`
`FAA-FERBRELKRTACHSOMMEE
`
`BI HOT( IP ORMBL OMB, ADT
`
`KRFRL EAU,
`
`[fF Aa)
`
`Dive PF URBCHRT SSRI ALCON,
`
`BRBB BLL EKAABSRBREMRTSRY
`
`EECMROBARBWBI LN, FAaA- FSH
`
`OyAA- FL 3 oRRANL Kt*-FL3O
`
`RMECMAK BRANT ZI ewS, FtA-
`
`Tee FRAY UE -F VARESE OKHORARE
`
`FORMRELELAGSZ LL Yta-FCRM
`
`ESALSENATABFISRRR TH TOZAT
`
`RFOSRURILL, ARK LCERRT ORR
`
`54.
`
`REL tS. EDRBORILUF Att - FER
`
`MYA A- FIL SR, nM Le CK
`
`RFCM ROBMOMRET oTUSZE HD, EER
`
`taAWAL, Tid) tO¥ ay b*MEBEATS
`
`FORREMMBBLOPSEVRSKLHMHEEE
`
`LOMRMMENS, TIT, nM ROF sy
`
`MCMBtTZC AR Se THA A- FORRERA
`
`FRR x1 07cm RET. easy bE
`
`Page 11 of 15
`
`—F-—
`
`Page 11 of 15
`
`

`

`Hi 4-40702 (Aa)
`
`BRMEMWLAadcdem? £8, 4 F—F 1
`
`Bo
`
`3Ors rh Ft RRR TT RREFLOR RRS
`
`RIMS, DHSFETERARMHRE (S51
`
`n, ~HO*t~-isvsI RGR RAAB? ERR
`
`1) it. Rin=82, Cin=O0. 2pF tH
`
`nao
`
`WRULA TEC MAMOMBIRES, CMS
`
`bieet4 7AMFIS KH. FETIO7—+
`
`REATZAOOR RRM 2ORRTYE- FY
`
`~V-AM@BEV,. (MESFETOSGRERO
`
`ALS OR THEAMERZGCTM. SIA -FORB
`
`~-1V) SXOSEVEEV, HAMeHs=
`
`Bitil. OpFCH 4S,
`
`(MDLAD, DHOHA
`
`RMMOV-~S-1, GVELTIS,
`
`*-FMERRRBRMERIMORB LD
`
`BEOLARADBABREMRL TBC Ie
`
`MRABBSHEHNTWS, LOLEAG. FE
`
`wOL MHP AMBEV, Mh + Vv -AGE
`
`TIO —bRHTS7HL CinkeO. 18~
`
`VeeROECEHTTWSZOT. V, FEL XeH
`
`0. 22pFrueH, EDLEDMA—bh evra
`
`ZZ. FTF -FLISOBSBEFETOANABREYX
`
`@MEV.utneFH-O. 5~-0. TVTHo
`
`VORLET SZ.
`WE. nDWtEMRELSROVa sy }+ MBE
`VEX TA -KUAOS 4H -KERORBET
`
`REFSL. SLLRRABORA~CORAT
`—W5 ate LHL, CORMATII. COTVe
`-FSYABARBESLHF- FLERE THOS
`
`&. MEBRTL SH A- FOR BONERS Br
`
`RO, V.OR(LiceO er a—- FILS OF RD
`
`ZLARS AA -—-FORMBEL.L MRREV. ©
`
`M3BMcat cis Mkts. FEHB. FET
`
`REtTi56
`
`1O9F-bROCS THEE LOVE -O. OV
`
`B3IRicngtrctsza-—-KFKORH > SERA T
`
`wHH-O. TVECKIEPF SL, EDLADSA
`
`CE. EeRML CLE RRA FOE RMR t-FL3 OS BRR SHORE BRS LEAT
`
`TECHO. 8~1. SpPFLMS, LEMOT.
`
`TESaIZMPac es, PEOLI LER HK
`
`Vat —0. 5. -0. 6. -O0. TVOE RE
`
`MELASOMBI27THSE, CE. ATR RE
`
`BOSMIBODH ESTA - FMEA RBH
`
`CML MSILOM TM OMFIOPS FET ME
`
`MiM4MoRaAt, Bi, C1 (xM) bua,
`
`REbOTHSE, EK, FETOASA-F OM
`
`Er. MAMOAA™, BB”, C°HRV,MK-O, Ci ngASHBELTNMRLTIV SAM, RRA
`
`5, -0. 6, -0. TVKEBUSFETOS1
`
`LI ORBALOMBLATD RR ARBOR MI
`
`1LOMRKBTYE-SFLAESLASZRHARRE
`
`WASRHIREC TY,
`
`BHEo
`
`MT BcrmrteRA CRY - FO peewee
`
`RKRMBRMBEPFETOCin (€V,.) PREL
`
`THM. ABI BSZOT, Cine. 18 p
`
`FCV,.=-O. TV) RA skeBSKiR, Ma
`
`Rm
`2
`(a)
`
`
`fon]an[en[nn|
`
`Pemafissfinefine
`
`
`
`
`HOmB £C ORBEA RLM, ER
`
`& 2
`
`Cb)
`
`Ro hMSKH. MARORB £A” OMI
`
`BeoxrLTSs,
`
`E£l4aS, RREMCRCin=O0. 1a8pF
`
`
`
`
`sautewwLeafoe[eae]
`Demmefirfeslen)
`
`
`
`ERR SASHES, RMA
`
`CTHRMABOACLITLC OBMeXESoALK
`
`SOWA, AD RMRMLEENTED. FA
`
`b. Cin=0. 22 pFTRHd4MOARAITE
`
`~FLISEAW TR SAO RZERPSHKMRHH
`
`RA” OPMRBS UAL SZEHR RAKES
`
`HHTTOS, LEKIIT. BARROS TA-F
`
`Page 12 of 15
`
`—-s3s-—
`
`Page 12 of 15
`
`

`

`HRP 4-40702 (6)
`
`L308 BtO4ranxit, FETOS-}+}EE
`
`LkeKtEETEFAFA-FIBUFETILOS EE
`
`O¢o ree bre t-—- FI Sex RPMRL. MM
`
`MEF SILA eeS. CDOEMDLORAZHOT
`
`LlCOMAPRARARRMOBLEMBCMBEtl.M
`
`AFORE BRARBORWKBAK AAT SC
`
`MICOPPOLALY 4.
`
`EMCHES.
`
`BLRKRAOKORMAERITARATSE
`
`WS. FRI RSBLOUBLZATRFETOA
`
`3, LRMIBDOABALORBR, ADEAR
`
`ASEKLBALCTHRAERAL AY, ERR
`
`B22 OSRRL. HART
`
`LHKRMEAHN SHU CRA CC. FETOHNS
`
`2LlERHLL COFM20BLELZITFET
`
`Brera Xt—-SbSYVASKRYEORHRFES
`
`LOAAFTAMBERMHTUSMTHESZ, COR
`
`WAM CHEN. Ff t- Fan BERL See
`
`MACH. Ftt- FL IMAM ARBRH2.
`
`3
`
`OvaybFRPStAO KREOERMENPT, pn
`
`ESaPFEFETLIECHACR RR ANTHS, L
`
`RAT tt FUECOHA CHES, EK, BRB
`
`Kits TT. SOPRA REV HR bL ee w.
`
`RMMICO4H SP. of FU > FRR
`
`FETI®OAASERILEMETSLGR SAF
`
`MRPLCbLeMeomReBons,
`
`—FOSREtEANXHT, RIM ORERK SU SEE
`
`[5E AAD HR]
`
`RECA RILBPECHMO AD,
`
`BAEAREN
`
`PERAAL RRS ERMK LH. RRF
`
`BTSAEMGY, EX. FETIOBS ER ILO
`
`Ka A BRAN AY AA KEL FLA- FS
`
`OHM hAWEH, ENHEMETSSIA-F
`
`LUMBAR MAnsAARECE LORD
`
`L130MMbEheaC tre, Fer, FETE
`
`RFOGEOTSLIEEMEF SICA TRAE
`
`FH+ A -FLIIOSRERILRH I BL Cet
`
`o. MMI