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`Stanley Shanfield
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`Curriculum Vitae for Stanley Shanfield
`Education:
`Massachusetts Institute of Technology, Ph.D., Physics, 1981
`University of California, Irvine, B.S. Cum Laude, Physics, 1977
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`Educational Awards:
`Outstanding Research Project, U.C. Regents Award, 1977
`Phi Beta Kappa, 1977
`Four Year Scholarship, Tuition & Research, ERDA/DOE, 1977-1981
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`Hands-On Professional Expertise:
`Semiconductor Physics & Chemistry
`Semiconductor Fabrication: Silicon and III-V Materials
`Semiconductor Device & Integrated Circuit Engineering
`Semiconductor Equipment: Front & Back End
`Semiconductor Packaging Design and Manufacturing
`Passive Component Design and Manufacturing
`RF Design and Fabrication
`Digital Design & Fabrication
`Semiconductor Manufacturing in Silicon and III-V Materials
`MEMS Design and Fabrication: Electrical, Optical, & Sensing Devices
`Fiber Optic Device Design and Fabrication
`Integrated Optics & Electro-Optical Devices
`Plasma Physics
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`Specialized Training:
`Global Positioning Electronics, Systems and Components
`Six Sigma Semiconductor Manufacturing
`Microwave Engineering
`US Patent Law in Technology
`Patent Application and Prosecution
`Semiconductor Plasma Processing
`Thin Film Physics and Technology
`MEMS-based Gyroscopes and Accelerometers
`Thermoelectric Materials & Technology
`Phased Array Radar Engineering
`Antennas and Electromagnetic Propagation
`Solid State Optical Devices
`Fiber Optic Communication System Operation
`HALT and HAST Reliability Testing Methods
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`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1004, IPR2022-00681, Pg. 1
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`2003 – present
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`Professional Experience:
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`Draper Laboratory Cambridge, MA
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`Division Leader, Advanced Hardware Development
`Distinguished Member of Technical Staff
`Technical Director
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`Led division (about 80 staff) in re-invigorating multi-chip integrated circuit module facility, more than doubling
`associated revenues in two years. By most accounts, made division a viable business & technological entity
`again. Invented & led implementation of an ultra-miniature electronics fabrication technology which became a
`top laboratory priority. Led team in realization & fabrication of a newly designed precision MEMS-based
`gyroscope and associated ASIC. Found funding and led team in developing a miniature power source with energy
`density at least two orders of magnitude higher than any source previously built. Developed fabrication
`technology for semiconductor-based low phase noise oscillator design, allowing for receiver operation with
`extremely low signal strength. Many awards received, most recently, the Draper 2010 Distinguished Performance
`Award, and 2010 Best Patent Award.
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`Clarendon Photonics Newton, MA
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`Director, Packaging & Integration
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`30 person photonic chip startup with $18 million 2nd round funding. Invented and productized new, low cost and
`reliable semiconductor processing, packaging and pig-tailing technology for optical add-drop multiplexer.
`Established assembly and packaging process, and developed control electronics. Partner with Micron
`Technologies, using their R&D semiconductor facility.
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`AXSUN Technologies Bedford/Billerica, MA
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`Vice President, Operations
`1999 – 2000
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`Initially three staff members with $6 million funding. Designed, fabricated and productized AXSUN’s micro-
`electromechanical (MEM) Fabry-Perot optical filter. Patents granted on semiconductor processing and control
`electronics. Completed facility and semiconductor processing design, then completely equipped. Raised 2nd
`round funding for $36 million. Established process and fabrication facility in Belfast, Northern Ireland for
`producing thick oxide silicon-on-insulator material.
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`Director, Manufacturing & Wafer Fab Technology
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`After 3rd round funding, led device manufacturing, creating wafer fab and assembly infrastructure; hired 70+
`people, led production. Delivered first generation product for revenue to multiple customers. Converted pure
`technology to dominant company revenue with high yield.
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`Company purchased by Volcano Technologies, San Diego.
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`2001 – 2003
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`1999 – 2001
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`2000 – 2001
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`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1004, IPR2022-00681, Pg. 2
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`1985 - 1999
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`1996 – 1999
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`1985 – 1992
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`1981 – 1984
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`1992 – 1996
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`Raytheon Corporation Lexington/Andover, MA
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`Manager, Semiconductor Operations
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`Built and led a 300 employee, $60 million revenue 24/7 semiconductor development and manufacturing operation
`resulting from the consolidation of a number of smaller organizations. Key player in technological development
`and recipient of Raytheon’s 6 Sigma Leadership training. Decision maker in Texas Instrument group acquisition,
`providing significant expert opinion on semiconductor and design facilities. Obtained state-of-art yields using best
`available steppers, deep reactive ion etching, plasma assisted CVD, and ion-implantation equipment, and
`disciplined design-for steppers, deep reactive ion etching, plasma assisted CVD, and ion-implantation equipment,
`and disciplined design-for-manufacturing
`circuit design and layout methodology.
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`Research Laboratory Manager
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`Leader of a 90 employee development and contract research organization in high performance semiconductor
`devices and circuits, measurement, assembly and wafer fab. Led a team which invented and implemented a
`major revenue generating
`technology (.$100 million) based on semiconductor device development
`(pseudomorphic high electron mobility transistor). Increased outside research funding by 50% in 3 years through
`superior technical performance relative
`to competitors.
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`Section Manager, Semiconductors & ICs
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`Led a MM-Wave Circuit and Module Development program over 2 years, leading to production win of a satellite
`terminal electronics generating $320 million in sales. Developed processes for fabricating high power, high
`frequency multi-function integrated circuits, and combining high performance digital and analog devices in a
`single integrated circuit.
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`Spire Corporation Bedford, MA
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`Staff Scientist
`Senior Staff Scientist
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`Developed new methods for low temperature deposition of plasma-assisted CVD epitaxial silicon. Wrote joint
`papers with MIT professor, and had process adopted by equipment manufacturers. Built, operated and
`characterized ion-assisted deposition system for making coating for semiconductor and machine tool industries.
`Process eventually purchased by Kennametal, Inc.
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`Publications
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`Restricted Publications & Reports
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`Process Sequence for Formation of Ultra-High Density Multi-Chip Modules:
`A high yield, low cost method for creating a system-in-a-package consisting of numerous semiconductor die,
`passive components, and sensors. Process formed basis for new (2008) facility.
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`Design and Method of Fabrication of Ultra-High Density Radioisotope Power Source:
`In test, a miniature power source that achieves energy density more than 1000X the best chemical battery.
`Method uses planar semiconductor processing of bulk thermoelectric materials.
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`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1004, IPR2022-00681, Pg. 3
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`Design and Method of Achieving Extremely Low Crystal Oscillator Phase Noise:
`Method developed for very low power refrigeration of quartz or sapphire crystal resonators, resulting in
`extremely low phase noise oscillators. The low phase noise allows extremely high sensitivity in digital receivers,
`including GPS receivers, leading to use in extremely low signal conditions.
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`Design, Evaluation & Production of MEMS-based Fabry-Perot Interferometer:
`Design and method for ultra-compact spectral analyzer made using semiconductor and optical thin film
`processing.
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`Design & Evaluation of Ultra-Fast Control Electronics for Integrated Optical Multiplexer:
`Design and performance evaluation of silicon-based integrated optical multiplexer using chip-based local
`heating
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`Design and Fabrication of Q-band MILSTAR Communications Terminal Transmitter:
`Record power and efficiency 44 GHz transmitter design using new transistor design, and combined waveguide
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`Key Publications (selected)
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`Process Characterization of PSG and BPSG Plasma Deposition, J. Electrochem. Soc., Volume 131, Issue
`9, pp. 2202-2203
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` A
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` double-recessed Al0.24GaAs/In0.16GaAs pseudomorphic HEMT for Ka- and Q-band power
`Applications, Electron Device Letters, IEEE, Volume 14, Issue 9, pp. 456 - 458
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`Formation of Thick Metal Structures on GaAs MMICs Using Image Reversal Lithography and
`Evaporated Metal Deposition, J. Electrochem. Soc., Volume 136, Issue 9, pp. 2687-2690
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`Contact Hole Etching in Load-Locked Hexagonal Reactive Ion Etch System, J. Electrochem. Soc., Vol.
`131, No. 8, 1984
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`An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with Improved Breakdown Voltage
`for X and Ku-band power applications, Microwave Theory and Techniques, IEEE Transactions on, Volume
`41, Issue 5, May 1993, pp. 752 - 759
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`Hot-electron-induced Degradation of Metal-Semiconductor Field-Effect Transistors, Integrated Circuit
`Symposium, 1994. Technical Digest 1994., 16th Annual Volume , Issue , 16-19 Oct. 1994, pp. 259
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`Ion Beam Deposition of Cubic Boron Nitride, J. Vac. Sci. Technol. A Volume 1, Issue 2, pp. 323-325
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`Patents
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`US Patent 6504235 - Passivation layer and process for semiconductor devices
`Method of coating semiconductor devices that prevented parametric shift in electrical performance. Solved key
`processing problem.
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`US Patent 4440108 - Ion Beam Deposition Apparatus
`Design of equipment for deposition of thin films in the presence of ion bombardment. System produced thin
`films of interest for mechanical, electrical and optical properties and was sold as an equipment product.
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`US Patent 6525880 - Integrated Tunable Fabry-Perot filter and Method of Making Same
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`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1004, IPR2022-00681, Pg. 4
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`Design and method for fabricating very small, very high performance variable optical filter using semiconductor
`fabrication technology. In current use in fiber optical networks, chemical sensors, and 3-D medical imaging
`applications.
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`US Patent 5175020 - Boron Nitride Films and Process of Making Same
`Ion assisted deposition of ultra-hard cubic boron nitride films for semiconductor and machine tool applications.
`Significant use in both areas.
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`US Patent 4526673 - Coating Method
`Method for deposition of thin films used in semiconductor device fabrication. Method based on direct control of
`the kinetics of thin film deposition.
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`US Patent 7727806 - Systems and Methods for High Density Multi-Component Modules
`Method for fabrication of electronic modules using multiple thinned integrated circuits, patterned multi-level
`interconnects, passive electronic components, and sensors
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`US Patent Application 2009/TBD - Devices, systems, and methods for controlling the temperature of
`resonant elements
`Devices and systems for achieving low phase noise crystal oscillators using unique low power thermoelectric
`structures
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`Expert Witness Experience:
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`See attachment
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`Contact information for Stanley Shanfield
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`STANLEY SHANFIELD
`342 Otis Street
`Newton, MA 02465
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`Phone:
`617-969-9574 (home)
`617-258-3392 (office)
`617-699-7262 (mobile)
`Email: shanfield@alum.mit.edu
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`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1004, IPR2022-00681, Pg. 5
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