`
`CMOS
`
`ANKER1016
`
`Ore es)om ee a hae Oe
`
`[IEEE Press Series on Microclectronic Systems
`Stuart K. Tewksbury, Series Editor
`
`ANKER 1016
`
`1
`
`
`
` CMOS
`
`The Ensticute ofElectrical and Electronics Engineers, Inc., New York
`
`
`
`Circuit Design, Layout, and Simulation
`
`R. Jacob Baker, Harry W. Li and David E. Boyce
`Department ofElectrical Engineering
`Microelectronics Research Center
`The University ofIdaho
`
`Press Series on Microelectronic Systems
`Sraart K. Tewksbury, Series Editor
`
`(EEE Circuits & Systems Society, Sponsor
`[EEE Solid-State Circuits Society, Spomser
`
`> as
`
`2
`
`
`
`from the publisher when ordered in bulk quantities, Contact:
`
`IEEE Press Marketing
`Attn: Special Sales
`Piscataway, NJ 08855-1331
`Fax: (732) 981-9334
`
`For more information about IEEE PRESS prodacts,
`visit the IEEE Home Page: bttp://woreee.org/
`
` This book and other books may be purchased at a discount
`
`Baker, R. Jacob (dese)
`CMOS circuit design, layout, and simulates / R. Jacob Baker,
`Maery W. Li, and David E. Boyce.
`p.
`om, ~ (TREE Presi series on mreroelectrorec syterms)
`Inctudes bibliographical referesces and dex
`ISBN 0.7803-3410-7
`1. Metal caade semicosdamors, Complemestary--Design and
`cosstection. 2. Inegrated circuats--Design and comsraction
`3. Metal oxide semicondectoe Meld-effect rarsitoes.
`1. Li,
`Hurry W.
`IL Boyos. David Tl. Tithe,
`[V, Serice
`TRTSTIGOMM4BIS
`1997
`621.3915--DC21
`
`° 1998 by the Institute of Electrical and Electronics Engineers, Inc.
`345 Bast 47th Street, New York, NY 10017-2394
`
`All rights reserved. No part ofthir book may be reprodsced in anyform,
`nor may it be stored in @ retrieval system or transmitted én anyform,
`without written permission from the publisher.
`
`Printed im the United States of America
`0”
`8
`&§
`7
`&
`S$
`4
`
`ISBN 0-7803-3416-7
`IEEE Order Number: PCS689
`
`Library ofCongres: Cataleging-in-Pebiicatian Data
`
`97-2196
`cr
`
`
`
`3
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`. Chapter 18 Special-Purpose Digital Circuits 61
`
`_ current in MS and M6. When the output of the oscillator ts low, M3 Is o# and M2 is
`off. This alkkvws the constant current from M4 to charge C. When the voltage across C
`reaches V,,,,, the output of the Schmitt trigger swings low, This causes the curput of the
`ascillater to go high and allows the constant currers from M1 to discharge C. When C
`is discharged doen co V,,, , the Schmitt trigger changes sisies, This series of events
`cominues, generating the square wave oulpul,
`
`
`
`Fi
`
`tralled-cscillavce wsing Schmitt tngger and current sources.
`188 Vol
`= MOSFETs M2 and M3 are osed os switches.
`
`If we label the drain currents of M1 and M4 as /,, and J... we can estimate the
`time it takes the capacitor to charge from V,,, 1 Vp. #3
`necteen
`fend the time it takes to change from Vip, to Vey: is
`
`(18.14)
`
`m
`
`8.13)
`
`pacSean
`The period of the oscillation frequency is, as before, the sum of f, and ¢,,
`This type of oscillator |s termed a voltage-comtralled oscillator (VOO) since the
`ounpat frequency can be controlled by an external voltage. The currems /,, and /,..
`(Pig. 18.8) are directly controlled by the contral wohage. As we will see in Ch. 20, the
`current in MS is mirrored in M1, M4, and M6, with an appropriate sealing factor
`dependent on the size of the transistors,
`18.1.4 High-Speed Schmitt Trigger
`It tures ot in practice that the Schmitt trigger of Fig. 18.3 is met casily optimized for
`high speed. The effective switching resistances of the MOSFETs are difficult to reduce
`
`
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`4
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