Wey BNET LGR
`
`BOTAUS20 GAZ 7050
`
`benwesn (O00 and d0G0 angstroms, an a slikarenliride layer ofthe passivation layer 3 aad on
`comant pads 6390, orincipally made ofslumimartior copper, eiposed by muliipicopenings 3H
`$32 and S34 in the passivating layer 5, Thereafter, the
`seedlayer may be formed by a suitable
`
`PROEESS GF pradesses, eg, by Sputtering a capper layer having 9 thickness between 20) and
`3000 angstroms an the adhesionwbarrier layer of any previousiy described material ar by
`
`thinkness between 200 and 3000 angstroms on ihe
`epuitering. a gold Jayer hewing «@
`adhestonfbarrier layer ofany previnasty desorbed material Thersafteraphataresial layer may
`
` x) multiple openings in the ghotormsist Isyer exposing the gead layer.
`
`hereafier, the measl Inver 8312 tony be Faemed by a suitable process or processes, ee, by
`
`eleciragiaung a copper layer having @ thickness between 2 and JO micramieters on. ihe capper
`
`Isyer acrving as ihe seed layer, exposed Oy the openings in ihe. photoresist
`
`layer, by
`
`electrapiating a copper layer having 4 thickaess between 2 snd 30 minrinieters on tie copper
`Inver serving ue the eed layer: expased Sythe openings in the photoresist layer and then
`electtapintiog a nickel
`layer having a thickness benween O93 and JOomicrometers on the
`lectrapiated capper iayer in the openings in the photoresist jayer, by electroplating 3 copper
`
`lnyéy having a thickness between 2 and 20 micrometers on the copper layer serving as the seed
`layer exposed by the openings Iv the photoresist laver electroplating a nickel loyer having.a
`
`thickness bepwean dks and Mimicrometers on the electroplated copper layer in the openings m
`
`the sioresi layer and thes electroplating a gold layer, platinum layer, palisdiun layer or
`
`susheniuis fgyer having ¢thickness betweeO08 arkd 2 mktrenvatters or the elestrophaed nickel
`laver in dhe-openings in the photorcesisf hover, ar by electroplating a gold layer* fevine K
`
`Mickness benveen 2 and 3G pichomveters nn fue gokl layer cerving as the sced Jayer eapased
`hy the openings in (he photerssist layer. Thereafter, the photoresist Ipyer may be removed,
`fa
`Yhereafter, the seed dayer mat ander the metal
`layer B32 is remevreduding € wererching
`.
`
`PTOCERE ST WSINE
`88 dry-eiching proness.
`Thereafter, the selhesion/barrier layer not under dhe
`fictal layer $312 is removed using aawnt-diching proosas or aie a dry-etohing process.
`
`its
`
`PUG2ET] Aer die pattersed citudt fever 834 is formed, a polymer dayer OF car be
`fosmid by a -guulable process or processes, a, by sphron casting a negative photosensitive
`2.
`yunhide laver, suck ay ester type, on the paternad cmrcuit layer 841 ancdan the nlvide layer o
`*yrhese psiention lnyer 5 and then curing the spin-on coated padyimide Javer at the temperature
`
`berween 265 and GAS"C for @ time between 3D acl 240 minutes in a nHrogen ar oxygen-free
`
`ambient. No opening is formed in the polymer layer 99 by expose Ihe thick and wide metal
`waee 83)
`.
`,
`
`43
`
`Ex.1002
`APPLEINC./ Page 326 of 1071
`
`Ex.1002
`APPLE INC. / Page 326 of 1071
`
`

`

`WEP OTL EGS
`
`BOTAUSIOMNG2TSA
`
`Referring to Fig. TO befave the patternedCreat layer 831 is formed, a polymer
`}OBTIB)
`lnyer @S can be optinaally formed by a guifable processor processes, e.g, fy aplrancnating «
`negatiss phomsensitive polyimide layer, such ay ester type, an the viride layer af the
`
`passivation layer 3 amd on the comact pads exposed “the apenings S32, S32 and. 334 in the
`
`passivation layer $. exposingthe solmon coated photosensitive polyimide iuyer, developingthe
`
`exposed pohasnide layer amd then caring the developed pelyintide layer cad the temperature
`benween 268 and 2ES°C for a thre hereon “Ni amd 240 sunutes in a nitrogen or axyger-irse
`
`ee
`warble. Acoirding!y, aiultipic-apedings 955.1) 95332 and Samay be lormed in the polymer
`openiygs $37, S32 and 333 -in the
`passivation layer 5, Afler ihe polymer layer 94 is fared, the patierned: cireull layer 831 can be
`
`formad on she polymer layer 95 and on the cartact pads expesed hy the openings 531, S32 and
`
`‘S83, The adhesion(barrier layer of any previously desoribed material miay be sputtered un the
`
`polymer layer
`
`9S and oa the contacrpads exposed by the openings 9931, 9592 and 9934 in the
`
`polymer [ager 95,
`
`FREQ]
`
`Alternatively, referring to fie 7C, there maybe muhiplepaterned omen ll layers
`
`Sand S32, including 4 portion serving as the previcusly deseribed (hick and wide metal trace
`83, tever the passivation layer 3. The process for forming the patterned circulliayer S21 shown
`in Fig. 7C agp be referred to as the process fer
`smingthe pattemed oi
`uN lever$3) sheen in
`Fig HHS. The patterned circuit layer 832 may contain an adhesionvbarriersn ayer & seed inyer on
`
`the adbesion/barriss layer, and an elecira:@lated meta!
`¥,
`ouripasing the bottomlayer 8321.
`
`achestoa/barrier layer and the sed aver
`
`fayer S322 on the ssed layer the
`
`fG220)
`Referring kr Fig. TC) after the patterned clroult layer "S31 is formed, a polymer
`{ayer O8 can be fowned by a aullalle process or procescad, 6... byvepiron coating a negathes
`pholocensiti ve pelyioide layer, aiehoas sstendype, cn the pattiemed cirgulllayer 83) and.on the
`Hiride layer of the passivation layer4, exposing the sgin-on caaisd photosensitive polyimide
`—oeSag,Ca a <P evtloping the exposed polyieide layer ard Ihen curing the developed polyimale layer
`al the eeiperalure between 265 and P8S° for a thd between UW) and 240 mingiss in a nrogen
`
`- ae ouygen-thes ambient. Accordingly, nusRiple openings 983) and $834 may be farmed in the
`
`polymer layer 88, exposing mraliple contact pada af.the patterned cireull layer 821.
`
`Beverrin . ii Fig. FO, regards te the process for farming the patterned cireght
`HOI21)
`jayer 832, the adhesionBarrier layer may be formed Iwo sullable process or processes. ea, bY
`
`apuiteying 4 Htanlurh-covtisining ayer, Such ee tlishiom ayer or a Gianier-tingsten-alloy layer,
`
`44
`
`Ex.1002
`APPLEINC./ Page 327 of 1071
`
`Ex.1002
`APPLE INC. / Page 327 of 1071
`
`

`

`WEF 2010) LEGS7
`
`POTSUSR GAR O56
`
`x
`having-wihicknecs between 1}00G and 6000 angarcms, apattering a chrootiur-ccarainng layer
`Sack as chrominm 3 ayer, having a thickness bebrosi 1G and SUG arigstrams, ar spuitering &
`
`tantalurn-cartaining layer, suchas iantalam layeror lardaluerniiride layer having. @ thickness
`4
`between HK) and GQG00 angstroms, on ihe solymer layer GS and an ihe cortact pads af the
`
`saberned ciroult lever 83 lL-exgoced by tulticle openings G84 band: 88.
`x
`:
`Poe
`Oe
`
`4 in the molypier layer
`
`‘ $
`
`8. Thereafler, the seed layer mney be formed by 4
`
`suitable process or processes, ng, By
`
`sputtering a copper dayer heving a thickness beoween S00 and 3000
`x
`adhesionbartier layer of any prevRnisly sleson bed
`naierial or By sputtering. a gold layer having
`ay
`¥
`aihickness between 200 and: S000 anigstrems on the adhesion/barriar layer of any previqusly
`
`angstroms, ay Ths
`
`desoribed suaterial, Thereafler, a photare
`
`ist laver may be formed on the ssed layer, naditiots
`
`openings in the phataresist layer sopesingthe seed
`
`ayer. Thereafier, the metal ayer 8322 may
`x
`he formed by
`ya Satable priness. or processes, 6.2, by electroplating @ capper layer having &
`
`
`
`tnckness beswern 2 and 30 micramelers.on the coppeep layer Serving as the seed layer, exposed
`
`by the openings. in the photoresistlayer, by elsciroplating « copeer tayer having « iickness
`ketween 2 and So-9 oromisters on The copper layer eerving as the seed layer, exposed by the
`Py
`
`kepveen OS aad 10 micrometers on the elec
`
`roplated copper layercin the openings in the
`
`org
`
`layer Raving a thickness
`layer and thes —e a nickel
`apenings in the photoresist
`chtdoresict dayer, by clecirosinting a copper‘we having a ikckness between 2 and
`ie,micremeters-an the copper layer
`seServing as the
`photeresial
`layer, electroplating a nickel= having a thickness: between O.4 and. §¢
`
`seed Isver, exposed by the openings in the
`
`nthe Gpenings inthe photoresist laver-and then
`
`micrometers. on the electroplated copper lay
`
`3t
`
`ayer ar futhenhen layer having 8
`eleciroplaving a gold layer, pisiinum layer, palladium ty
`thickness. bepween 0.05 and 2 micrometerson theclectrogiated niche) Lever dn ihe SPERMAGS EN
`-
`er Having a thickness between 2 and 2t
`ibe ploinresist laver, or by clociroplating a geld lay
`
`micromeiens on tke gold lever serving as the seed:
`
`laver, expased by the openings in the
`
`r, the photoresist layer may be remmaved. Thereafter, the seed Eager
`
`22 is removed using a wet-ciching process or asing a-dey-eiching
`
`process, Thereafter, the adhesion/barrier layer notunder the metal layer 8322 4s rentoved asing
`&
`a@owel-cinhing proweaa ur ueing a dry-etching process
`
`*
`
`(QO222]
`After the palternad circgit lager
`4x
`armed &
`va sultable proness or processes, &g., hy spin-on coming 2 negative photosensitive
`it Egger 832 sad on the polymer [ayer
`
`832 is formed, a pelynter layer 89 cen be
`
`pohdonde layer, math as ester ype, an thepatterned cin
`
`4s
`
`Ex.1002
`APPLEINC./ Page 328 of 1071
`
`Ex.1002
`APPLE INC. / Page 328 of 1071
`
`

`

`Wer FOGG G87
`
`POTSUSR GAR O56
`
`non goated “_ layer at the tamperanirve hetween 265 ard
`SI°C for aime setween 3a 246 roinutes ina nyoges of oxygeniree ambit,
`
`fa
`
`and
`
`MUG223}
`
` Alteetativel, referring to Fie. FC. before the patterned clreun layer BOP ie
`
`feried,.a polymer layer OS as mentioned in Fae 7D can be optionally formed Oy a suntable
`
`}
`Ba
`BY
`&
`gs
`proses uy proossses, 16), hy spires cdating a negative phatoserskive
`
`.
`polyimide layer, sant
`
`ay ester type sin the nlinds Jayer <athe passivation layer S and.on the contact pads exposed by
`$
`fh
`%
`a2 aad 334 in the passivation dayer 3, exposing the spin-on coated
`
`ihe openings S21,
`
`°
`
`phidadensitive polyimide Jaye, develapinge the expased polyimide layer and then curbig the
`
`developed polyimide layer at the temperature between 267 and 285°C for @ tise bebween 30
`
`and 240 rrinuice in a mirogen of caygenciree ambient. According! mullighe openings $941,
`
`8332 and 8534 maybe formed in the polyrier layer OS as mentioned in Fig: TE) exposing
`
`veultipls contact pads exposed by the openings $31, 332 and 24) in thepassivationlayer 4,
`
`After the polymer layer $5 Ia iprmesd, the patiemed ciroull Igver $31 can be formed on the
`
`polymer layer $5 and an the contact pads expdsed ‘by che openings S71, 332 and 333. The
`
`adhesituydbarriee layer of any previcualy. degaribed material may be sputtered on the polymer
`
`jayer OS and on the comtant pads exposed by the openings 9531,
`
`9932 and G434 hr the polymer
`
`fjayer 9S,
`Fig. AO te similar te Fig 7B eanepe the thick metal pinnes, busesor waces $ are:
`HOS24}
`dad
`composed of two patterned cireait Inyers 83) and 852 the bottom one is caniposed of
`a
`sapments S3iaand $416, A potyrner lever OS sésarates the patterned circait layer BS) tran the
`patterned circult leyer 232.
`in Fig. 7O, the thick metal plane, trace ar hus 83) in Fa TB as
`replaced by the thick nietal ofane, trace ar bus 831s, 83)b and $32. Referer
`o Figs Ta, a
`
`aignal aniput dram the output node dusuatly the drain of an MOS transistorin the iidernal
`the nescvationlayer &. then throught theopening S31 in the passivation layer 3, thety through
`
`cirgult 2b) of the internal-citadl 2) passes through the fine-line metal buses or anes Ob urder
`
`the metal trace ar has 83 1b over the passivation layer §, (Lyin a Seat path, hen op throweh an
`
`agenng G83] in the polymer fayer 88, then thraugh the metal Gus gr ace SIF anthe polymer
`
`layer 98, then down through an opening 9834 in the polymer layer OY, then through the mictal
`
`trace ar bas 83la over the: passivation layer BPis, then through. an opening S34 m. the
`
`passivation layer 5. then through the fine-line metal structure G34 under the passivation hyyer 4.
`and to fhe input node duenally ihe gate of Gre MOS wansigier iethe MOR. gate 29) of the NOR
`pate 24; (2339 & second path,
`then dows through an apering 332 im the passivation layer 35,
`‘then theigh thefise-line inetal lntersanmection soheme S32 under the passivation layer 5, and
`AG
`
`Ex.1002
`APPLEINC./ Page 329 of 1071
`
`Ex.1002
`APPLE INC. / Page 329 of 1071
`
`

`

`WO FONT EGS?
`
`BCTTAUSENETE
`
`then to the input nodes {usually the gates of MOS) transistors in the NOR gate 24 and. the
`NADIG gate 23, respectively) of the NOR gute 22
`and the NAND gate 23.
`
`fRPIQS{
`
`Referring us SH, 68, TH, FO and FD.
`a
`gassivation layer 4 cari he dannected to anofechiy VO circuit conpected to an external cireuil,
`BS Asa no significant voltage dros of signal
`degradation. The-over-passivation scheme | O2.shown infig. 7B inchides the polymer lnyer 99
`~
`
`the metal wace cor bus $2 over ihe
`
`and the metal
`
`trace 83 provided by the patiorned circulayer 831, The averqessiWwauon
`
`scheme 102 shoejn Pig FC iashides pep polymer layers 88 apd 99 and the -nistal race 83
`
`provided bythe patterned cirouit Iavers 831) ahd 832, and the openings 983t-and 9834 in the
`
`volymer layer 88 sre over ihe patterned circull layers 831. The over-passivation scheme [0
`
`shown in Fig. 7D nchides twe polymer layers.95 and Qoand the mieial trace 83 provided by
`“thgsstEom%<Aa£5 choult layer 83), and the openings 9537, 94732 and 9894 are in the palymer layer
`omwo
`
`oz2t Newrefar to Figs, SOA5E showing internal buffer clroufts applied tothe internal
`esame&2 eae & “ty wat i wh me Ps Se =3 af
`eetee% % &&ax £. ee B£3&%ee
`ey.Eia ¢ ee
`m 2
`¥o ee
`a FD pagy be an interns!
`inverter shown in Fig, SC. inca firse application, the sine ofthe pechanrief MOS 2Y0t and
`
`tnd
`
`pechanne? MOS 2102 can be devigned in asize often employed Jp the internal circuita 22, 2)
`
`and 24. Phe sizeof on MOS tnmsistor @ defined usa satio of a physical channel width thereat
`
`to aphydical chanel Jeneth thereof The d-charmel MODS. transistor 2701 may have'a yatie of a
`
`physical channel widch chetsef te @ physinal channel dength thereof ranging from, ag, about
`
`130 20, ranging fram, o.@. about 6.) to 1), or preferabby ranging from, eg, about 02 te 2.
`
`Yhe p-channel MOS transivor 2102 mag have arathy ofa physical channel witth cheesa? te
`
`physical channel length iheresfranging from, ¢.8., shout 0.2 to 40, rangidg fan ag, about
`Sea
`G22 HG, or preferably ranging from, eg..aboit G4 i 4. In the dirst. application, a curred
`
`passing Uneaugh the (hick metal trace #3 aver the paysivatiin layer 3 and cufgulting from the
`~
`;
`
`xin Re of the dmernal sinailt 21 may bed a ranak of heeveen 3} pA and “2 awk, and
`
`sreferably af between LO gA and | A. Ih a second apghcation, a larger drive ourrent ic
`p
`‘
`‘
`HE
`&
`
`required for the oinputedthe inverter 2.11, for example, when d heavy lead io demanded bythe
`a
`“3
`load internal cirmults 23, 23 and 24. or -when the interna! clreuits. 22) 23 ard 24 areJocated far
`
`away [rom the witermal circus 21, reqidring interconnection metal lines.or traces confectingthe
`H
`interna Grout 2) sad deciaternal cirouits 22, 23 and 24 ino distance of larger thane] pom arof
`
`larger than Jmoi, for exanmple. Inthe second application, the current output fom. the inverter
`ati ig higher thas tha: outpat fen the regular ireernal circuit, and is, br example, af imAvor $
`AF
`
`Ex.1002
`APPLEINC./ Page 330 of 1071
`
`Ex.1002
`APPLE INC. / Page 330 of 1071
`
`

`

`Way DONT EGRT
`
`BCTUSARTOS0
`
`}
`oA, or in 6 muige of betacen SOBA and Loam, and preferably of benween TOO WA and 2 ak
`Mens, inthe second apptical mo, The echanial MOS transivter 210) may have a canoe? 3
`physical channel width thereat to a ahysical channel length thereof ranging from, eg. about
`
`LS to 30, and preferably ranging from. 2g, shout 2.8 to 10. Phe p-chanrel MOS transistor
`
`iG) moy hays a ratio of « physieal channel eidth thersefte a physical channel length thereo!
`
`ranging frome. about J 16° GU, and prelerably ranging from, eg, about $16 28,
`t
`NO227} When dhe inverter Z1] shaver iy Pig, 30
`S$ applied to
`the bvternal circutl Sf as
`shownia Page, 58) 6B, 7B TC and 7D. the desine of the n-channel MOS transistor 210) and
`
`peottanne! MOS drancistor 2102. serving as the auipat nsde Ne of the bnernal cmon2], are
`bea
`aeh
`eporected jo the thick mefal traces or buses 83, 831 or B32 over the passivation layer Ss
`218) and
`
`shown in Page 3BGB, 7B Cand 7D. The gates of the achaniel MOS transisiet
`
`pecharmel MOS trangistor 2102 serve as the Input node Xiof the intemal sirewit 21.
`Neferring io Pig:ay vee gute, Bus ar trace B1, 874
`ar 812, ac shows in Pigs. YB, EC, 2B, 20, 3B, 30 and 30) aver the passivation layer 5 may
`
`
`
`HMGr28]
`
`eaommect the fode P of the voltage regelatur or geatwerter clroult. 4) and whe souree af the
`ay
`gechannel MOA devine 2102, The previously described power plane, bus or ince $1, 81T ar
`eo
`
`Si2 May contain a patierned cireuit layer over the patterned cirouNsieges S31 andlor 8232 of the
`
`sinck. and wide eign! doses, bus.or plane 83 se siownin Figs 7RS7D. Alematively, the thick
`
`and wide signal trace, Ous.or plane 83 as shown in Figs 78-72 may contain « patternedarent
`*s
`e
`layer over thet of the prawioushy desc
`
`ihed power plane, bua ar trace $1\-The previously
`
`desorihed scound pling, bus or tmice £2 ar B2i as shown in Pigs. 1, 2C land 30, over the
`
`gassivation layer S may connect the node Bs ef the vollage reguiater ar cenverter ciel 43
`
`aad the source'o?the nechannel MUS device 2107. The proviously described pround plane, bus
`
`ur.trace 83 or 821] may contain a patierned sircull layer aver the patterned sireuit layers 834
`My
`g
`antfor 832 af the thick and wide signal Gace, bus or plane ES as shown in Figs 7A-TE.
`
`Alternatively, ihe thick and avide signal trace, bas or lane 83 ss shown in Pies 7EeTO may
`contain 2 pattemed circuit layer over that of fhe prevously desaribed ground plans, bus ay trane
`2.
`
`*B
`
`QS} Figs. SO) and 38 showan internal driver 232 and internal trrsiate ontpal bu fie
`
`Sik, respectively, When the internal driver! 22 shown by Fig, SDs apphed ke the huernal
`civeud 2) as shownag Figs, 3B. OB. 7B, 7C and 7D, the draing &xf a vchannel MOS transistor
`a
`2105 anal p-channe! MURS wansistor2104, serving as the cuiged dese Nooftheternal citeul
`
`4te
`
`Ex.1002
`APPLEINC./ Page 331 of 1071
`
`Ex.1002
`APPLE INC. / Page 331 of 1071
`
`

`

`WEP OTL EGS
`
`BOTAUSIOMNG2TSA
`
`3 RSI
`21, are conRected 4 thethink metal races oy humes 83-831) or 832 over the passivacon layer S,
`
`The gies of a nechannel MOS wansister 2103‘ and pchannel MOS twamnstor 2104" serve. ay
`
`the Input nade Al ofthe internal circuit 21. The drains of the a-channel. MOS transieiar 2703"
`
`and rechansel MCES transister 2104" ars
`
`connested tw the gates of the a-channe! MOS
`
`lrangistor 2 HOA aid pechannel MOS transistor gd 1,
`
`x
`PI When the internal gi-state output butler 219 showin Pig 36 is applied io the
`infernal circoit 2} as shoven Ia Fige. SB, AB TR, PC snd 7) the drains of a n-channel MOS
`
`tramister 2107" and p-ohaanel MOS transistor SHS wath a awitch Amction usurdlled by an
`
`cable signal rosmsmited to ihe pide of the echarmel MOS irancistor 2100" gad. Enablebar
`signal mangmited to dhe gare of the pechannel MOS weneistor 2108", serving as the output
`
`node Ao of the internal circult 24) aré Sonmected te the thick metal traces or buses 83, B31 or
`
`Ade ever the passivation layer
`3 as shown in Fles. 38, 6B, 7B, TC and TR, The gales ofa
`recharinel MOS transistr 2107 arkd oschanniel MOS transistor 2108 serve wg. the input nade Xie
`
`of the internal ercuk 21. The drains of a n-channel MOS transistor 2207 and p-channel MOS
`a
`ie
`tendsidiar 2DOS are eoomected to rhe sopree@s of The pechanne! MOS teansistor 21Q7" and
`
`fOOLS1}
`Phe internal driver 212 or internal trstate output buffer 215, used to drive a
`algnal heavel the post-pagalvation metal traces 83 and pe the iaterral clroulis 22, 23 and 4, aS
`SHOW a Fig- SD oy SE.
`iy
`sinilar ta theoff-chipdeiver oreeewetate cursat buflee¢used
`
`to drive an emternal aireuitry to he discussed Inthe following Fig. Ti Acor {1D, respectively
`
`exvbpt that (Pythe outout node Xo ofthe internal driver 2!2.ar internal trkatate cuigut baller
`
`217 $s not camnented to ah extemal citenie: (2) the largest one of p-MOS transistars in the
`
`w#ernal driver 212 or internal tri-state output beffer 213 has 3 ratio pf a physival channel width
`to
`thereof to a physical channel feneth thereof amatler than that af rhe largest one af mMOS
`irareistars in. the off-chip driver ar off-chip irpsiaie Guipat badler connected ig an external
`dircnll, Phe internalavinteoutput befler 213 provides drive canabitinyaml gvioh capability;
`and is particalarly gefiy] to transmit @ date dignal or am address signal
`in a meémoary chip
`ww hx
`through the thick mera) Hnes ar araces 89 over the passivation layer S acting ae data or addreeg
`bases
`
`fn Fig, SB. a relatively large drbe current may be required ar the Guiypur nods
`fOIS2{
`Xe of the internal cirouit 21 when a heavy joad is demanded bythe internal chreults 22, 23 and
`24, of when the internal circuits 22.29 ared 24 are far wway framthe internal clouit 21 ina
`
`49
`
`Ex.1002
`APPLEINC./ Page 332 of 1071
`
`Ex.1002
`APPLE INC. / Page 332 of 1071
`
`

`

`Wey BNET LGR
`
`BOTAUS20 GAZ 7050
`
`AiGtance of larger than f pittearof tanger thar Snes. To provide aretatively largedrive current,
`the imernal circu21 can be designed ay an oxsernal driver 21 2-sheeavn in Fis. SD corsa internal
`
`ifi-siate ‘oinpat. bo fer 213 shown is Fig. SE.
`
`SD and SE, the necharme? MOS transistors 2103, 2507 and 2107 may
`
`
`yeival channel width dherse?’oa physical chanmil length there ranging
`a a Besmot&,
`§ to 30, ark} preferably rangingfrom, eg, about 2S to 1G. The pechanne!
`¥
`QS iransistom: 2M, 2708 and 2108 may havea ratio of4aptiysion channel whith therestd
`
`aphysicel channel length thereof canging From. og. abouts te 60, and preferably ranging from,
`
`eo, Bbout 5 fo 2H. fa Figs. SD) the nechainine! MOS fransistor 2YOT may fave a ratio ofa
`
`physical channel with thereatte a physical channel. length therao!’ eeefrom, eg... aan
`§.] 4 30, ranging from, 2&, about G4 fo 10, dr preferably rangidg thom,
`ag. about G2 ub 2,
`and the p-channe! MOS tranvister 2764" may have 2 ratio of aplesical channel widththereof
`to a physio! channel lengih thereof ranging fant, eg. about Ok to 40) banging from<a,
`about 0.2 w 20, or preferably ranging fom, eg. about4 to 4. Referring to Pas. SB, SQ and
`
`SE, the interrial driver 212 of intersal triste bulfer 212 may drive'a signal oueput from the
`
`gutpar nade Xo thereatthrough the thick meted trace or Dus 83 over the passivation layer 3 to
`the. inpiol nedes Wi Viand Wiottecintemaloucelis 22,25 and 26 bat aot to an external caren,
`oS
`A current passing theough the diiek metal trace or line 43. ower the passivation ayer X and
`auigutting from the node Xa. of the joternab cireadt 21, provided oy the internal driver 2IZ or
`*
`internal tri-state badler 243, may he between SOG pA and [0 mA, and preferably bepveen M00
`
`pA wad 2mA,
`
`fOURS4| Referring mw Fig. SD, the previously described power piane, bus er race 81, 315
`or SEE, se shawn da Pigs HB, PC) 2B, 2C. 3B, SO and 30, aver the passivation layer S can
`
`gundect the neds F afthe solege regulate or converter circull 44 and. the souresa of the
`
`p-chatine! MOS devices THM and TOM", The previously described power plane, Sis oF trace
`SiR} oe 812 may contain a patierned cirouit layer aver ie patterned cirawit isyers B21 andVor
`
`S32 of the thick and wide signal trace, bus or plane’8o as shawn in Figs TR-7D. Alternatively,
`
`the Thick and wkle cignal
`trace, bas or plane 83) as shows In Figs TES7D may contain a
`Patterned clroult layer over thatofthe previdualy described peewer plane, bus-orgace 81. The
`previously deserihed ground plane, bus or trace 82 or 821, as shown in Figs. 1, 30 and 3€.
`uver the passhadion layey Scan connect the node. Ks of the voltage. pegulstor or converter
`elreult 4) and the sources of die rechanne! MOS devises QUE and 2107, The previnusly
`
`‘described ground plane, bus of trace §2.dr 82) niay contain a patterned circilt layer over the
`S88
`
`Ex.1002
`APPLEINC./ Page 333 of 1071
`
`Ex.1002
`APPLE INC. / Page 333 of 1071
`
`

`

`We? 2URT LAGS?
`
`PCTAUISOTRG
`
`paterned clout layets 831 and/or 832 of che chick and wide-signal trece, bus ar plane $3 as
`shout in Figs TR-7D. Altematively, the chick and wide dignal trang, bus o¢ plane £3 as shown
`in Figs 78-7D may contain « patterned clreuit layer aver that of the previously described
`
`ground plane, bus or race 2,
`
`Reterringio Fig dE, the previously described power plane. law ar trace B13
`(MSS)
`or STE as shown in Figs. 1B) 1C, 2B, 3C) 38, 20 and 3D. over the passivation layer 3 ean
`
`sansect the aode Pofthe voltage regulater ar converter ciroult 4] and the source of the
`
`p-charne! MOS device ZEO8, The provicualy described power plane, bus or tesce A. SHY or
`S12 may Comah) a panemed clreut layer over the patterned cirtult layers R31 adios 832 of the
`
`thick and wide sienal trace, bus.or-plane B83 as shows in Figs 7O-7O. Altermatively, the thick
`te
`fd wide senkbdrace, husar plane A ay shown in Figs YB-FD may caraain & panored cial
`
`layer over that of the previously described pawer-plane, bug or fare 1. The previensly
`
`described praund plane, bus oy trate §2 oF BEE, ds shown iy Flas: (0, 2C and SCL over the
`
`4 can connect the node Rs ofthe ya age regulator ar xerverter cirtuit 47) and
`pasgivation fayer
`she source
`of the mchannie! MOS device 2107. The previnnsty described ground plane, bus of
`trace 82 cr Bl may contaa vaiterne’ citron? Newer over the pateraed circuk iayere 831
`
`andlar B33 af the thick snd wide signal tice, buscar plane 2) as -shoen in. Figs PA-7E.
`
`Adtermatively, jhe thick and wide signs] trace, bus ar plane 83 se shows in Pigs JEL7D may
`patterned chreud layer over that of the previously descnbed ground plane, buror trans
`
`
` Alermativelywhena NMOS transistor in the Internal cireult- 27 baving a drain
`{G8I88}
`asthe outgat node Xo ofthe Internal cirouit 2} has a ratio ofa physsical channel width to-a
`physical cRammel lengch rangitie fiorn, e.g. about 1.6 to. 39, and preferably rranging from, 208.
`about 2. $9 10 a NMOS transistor inghe infernal circ 23, 29 or 24 having a pate asthe input
`node Ui Mrand. Wi ofthe internal elrcal 22, 23 or 24 hag a ratio OF AfSicea channel width
`phygical channel longi ranging fham, eg about i] do 20, ranging fromseg. abow0.7 lo 1G,
`
`or preferably amging from, e.g, about G2 in 2. Wht s NMOStransieter in the ideenal circa
`
`2) having « drain as the output nede Ko’ af the internal oleeult 27 haga radio of a physical
`shannel whl io & PRyskalshanne? isoath ranging from, ¢.g.. about 1S to.30, art preferably
`ranging from, &g. abou 25 ta 1G, a PMS wansistor in the internal ee22, 23.ar 24
`having & gates thecians stale Oh, Viand Weoftheinternal circus 22, 23 ar 24
`physicalchannel wiih toa physical change! lonath ranging fram, ag. aluaal G.2 to 48)ranging
`from, e.g, dhowt Q.2-to20, or preferably ranging fon, e.gabout Od to 4. When 2 FOS
`
`yo
`
`ad
`
`Ex.1002
`APPLEINC./ Page 334 of 1071
`
`Ex.1002
`APPLE INC. / Page 334 of 1071
`
`

`

`WO FONT EGS?
`
`BCTTAUSENETE
`
`5}
`‘
`o
`transistor in the internal cirseit 2? having a drain as the cutput mide Ne of the internal
`
`t has a ratie
`
`ofa physinal channel widtivie a physical channel length ranging from, ep. about
`
`Sto60, and preferably ranging front, eg about 4 to 20.8 NMOS fangistar in the Internal
`
`eiraut 22, 2) or 24 having a gate as the Input node Lh, Viand Woof the internal ciragh 22, 2°
`
`or 24 has a‘ratie af a physical channel width to a physical channel length rangmg Trore, @5.,
`about O-} io 3). ranging framye.g, abort G1 1071), or preferatily magisg foot, ag. abet O2
`ied Wher a PIMOS transistor i the interial circuit 27 having a crane theourpet made Xo of
`
`
`wit 2 has a rao of a phy
`channel whith to a physiesl obannel length
`
`ranging drom, eg. about > to Gd, ard preferably ranging dro, @g@, about 3 to 20, a POS
`
`wansiator in the bdermal ciecul 22, 23 ar 24 haying agate as the iayat saddle Li, Vi and Whol
`the Iternal cirhan2g, 23 or 24 has a ratio af s physingl channel avidth {6 a physical channel
`ead
`length ranging fom, og. about 02 fo 40, ranging from, ag, ahogt 0.2 ip 20nr preferably
`
`a S
`
`about Gatto 4. in the previcnely descritied case, B signal cutpat dine ihe
`ranging from, 2g
`
`autpat node Xo af the mternal circuit 21 may pase thenugh the thick metal plane, bus, trace or
` +s
`tine 83 to dhe interme! cirealis 22, 2h and 2S, witha current, passing Uwaugh the thick metal
`&
`~ yanging fram, e.g axa Oe miceaamperes te HO millianiperss,
`
`fore, GB. about TOD. micrcamperad ied milligniperss.
`
`*
`%
`eapplicd tos memory chip, se llssteated in
`
`BNEESIE
`Figs. GES.
`
`The concept shownin Fig.
`
`a
`
`SB.oan
`
`ea
`
`fGPI3R8)
`
`Referring to Tig. SF,
`
`the previously desevihed mi-state output buffer 2E3 is
`
`emplnyed to be the internal girenlt 2 i shown in-Figs, 38 OR, 78, 70) and FD aod bas an iypat
`
`aode Xi commected to an outpal node of an amplifies 214 and an output node Xo conmectad to
`
`the interna cinta 22, 33 and 24. such ag logic gates. trough the above mentored thick
`
`metal plane, bus ortrace 83, S31 or 832 over the passivation laver 5, ag skowa in Pigs. 38,68,
`JMB, PC and 7D, and the intwoal chiwuits 22, 2S and 2d mayalternatively be NOR gate,MAND
`
`gate, AND gate, OR gate, _—mplifier, adder, multiplexer, dinlexer, mulfipher, A/D
`
`transistor, bipolar CMOStrangister or Bipolar cireun, The
`
`converter, D/A-oonverter, CMOS
`
`semicondneniri
`werd lines, dt Enes and bis thar) lines: Back palr of bi line, auch se 277), and bit (bar) ine,
`
`nay maclide a merryarray Ineking PegiNGole memory cells connected ta
`
`eucb a8 ZUR de connected. to one of the amplifigns, such as 214, through the channel-of the
`a
`neokacnel MOS transistors 272
`aad T122 controled by CSE node. WHeaahe a-chanoel MOS
`
`wansisiors 2122 and 2123 ars qurned off ih an inactive oysle, the wolse dn the ba line 27 bor
`
`Ex.1002
`APPLEINC./ Page 335 of 1071
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`Ex.1002
`APPLE INC. / Page 335 of 1071
`
`

`

`WO FONT EGS?
`
`BCTTAUSENETE
`
`on the ba fbark ne 2172 can viet he crahsntned to the sens
`>
`bapact on the Senge amplifier 214,
`
`in this vase, The memory cell 275 bs a static random access meniry (SRAM)
`fOBIS9f{
`of
`aby Rs
`cell, Akternatively, the memory cell 2} tt,jay be a chynamic randam access PETROTY fDRANM}
`cell, ah erasable. progtarmmable fead only siamnory (EPROM) cell, an. electronic. eeasahle
`
`programmable: read only memory (EEPROM) cell, a Jesh memory cella read only memory
`
`(ROM) cell, ur a magnhewe random
`
`access memory (MRAM) cell, which is connmcted tb ane ar
`Ro
`mone foxlt. gates 22, 33 and 24 thraugh a thick metal traces $3, 83) ar 832 over the pagsivation
`
`iaver So as shown ay Figs SB. 68,78, 7Cand TRL A sende amplifier 214, ti-state baer 213,
`“
`pass gate 216, latch memory 2 or internal driver 272, aa shown in Figs. SP-3/, max be
`
`apticnally set of the path herween aay Kind of meminry ool 218 and the thick metal transs §
`e
`$3 or 837 over the nagelvation layer 5,
`
`{88240}
`
`frome of SURLAM cell sefisig as the remiory cell 21S. a plurality of uihe
`
`memory esl TiSray be arranged ban array, A pluvalityofbit ne SLY? and be {bar} fine
`
`2172 arranged in parailelare conmented to the SQUTaes gt draing ofMMOS transistors 2120 and
`
`2119 of the memory eels 214 arranged in-e Solum, respectively A glurality ef word Jing
`
`aitanged iy parallel and in vertical ithe bit Hne 227 F ard bY Char) Nine 2872 Js connected 10
`
`ihegate of NMOS transistors 2120 and 2 12 of the memory cells.15 arranged in a row. The
`
`mornary calf 2ES Rather eludes pea PMOS iansistors 2118 and 21bS and twa NMOS
`ore
`Sd
`rassistors 2109 and 2717, and the ges of the PANN) wansistar 2316. are the NMOS transistor
`vled
`BYES and the drains of the PMEIR dransistor 2118 and the Nv
`
`
`
`
`ia the bitline 217fthrangh the channel of the NMOS transistesor 2120,and the pes ef the
`
`S
`
`PME fansistor SEIS and the NMC teanasion 21427 and the drains ofthe PMOS traraistor
`
`eeeeadEqBe2a4B
`oes
`216and the NMO
`£6
`2135 are connected ta she bi. dbary line 212 dhroagh the
`chiatinet ¢ofthe NAICS transistor 2119:
`
`[OER]
`
`The sense ampfifier 214, suclf as differantial amplifier, gan be soupled ke
`
`mudtipie oremery oes 2) S arranged ta. cohumm through the bit Hae 297 band the hat (har) fine
`2472. The sense amples 244 \ichaes tad PMOMS fransisinrs 22 and-21 14 and twee NMOS
`3
`ty
`transigiors 211 f and 2913, and the gates af che PMIDS transistors 2112 and 2114 are connected
`eh the drains of the NMOS transistor S47; and the PMOS tangister ZET2. arch
`the drains-of
`
`the PRIOR.
`
`trans
`
`Sense amplifier 2
`
`2108 amd the NMOS
`
`guipal node of the
`
`Ex.1002
`APPLEINC./ Page 336 of 1071
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`Ex.1002
`APPLE INC. / Page 336 of 1071
`
`

`

`WO FONT EGS?
`
`BCTTAUSENETE
`
`oo
`tinsiatty RIOT in the previously described iehatate buNler 2)3. The gate of the NMOS
`%
`me
`transistor 2113 is cormected io ihe a Hine 2171. The gate of the NMOS transistor 21h}
`3
`a
`
`connected to the be {herd ine 2172. The Gesceiption aad specification ofthe tristate bullae 273
`
`roay-be referredthe above Maswation shown in Pig. S€,
`