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`Samsung/Dell, Exh. 1031, p. 1
`
`Samsung/Dell, Exh. 1031, p. 1
`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

`

`=====:;;;:;;;;;;a
`
`,_....,___,_
`
`~---- - -- -------
`
`BIPOLAR AND MOS
`ANALOG INTEGRATED
`CIRCUIT DESIGN
`
`ALAN B. GREBENE
`MICRO-LINEAR CORPORATION
`SUNNYVALE, CALIFORNIA
`
`A Wiley-lnterscience Publication
`John Wiley & Sons
`New York Chichester Brisbane Toronto Singapore
`
`,1
`j
`
`Samsung/Dell, Exh. 1031, p. 2
`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

`

`Copyright© 1984 by John Wiley & Sons, Inc.
`
`All rights reserved. Published simultaneously in Canada.
`
`Reproduction or translation of any part of this work
`beyond that perm itted by Section 107 or 108 of the
`1976 United States Copyright Act without the permission
`of the copyright owner is unlawful. Requests for
`perm ission or further inform ation should be addressed to
`the Perm issions Department, John Wiley & Sons, Inc.
`
`Library of Congress Cataloging in Publication Data:
`Grebene, Alan B., 1939-
`Bipolar and MOS analog integrated circuit design.
`"A Wiley-Interscience publication."
`Includes index.
`I. Integrated circuits. 2. Electronic circuit
`design. 3. Metal oxide semiconductors. 4. Bipolar
`transistors. I. Title. II. Title: Bipolar and M.O.S.
`analog integrated circuit design.
`
`TK7874.G693 1983
`ISBN 0-471-08529-4
`
`621.381 '73
`
`83-6563
`
`Printed in the United States of America
`
`10 9 8 7 6 5
`
`The contents and or,
`engineer in the field
`for the IC designer
`design guidelines an
`various classes of a
`and limitations, and
`It is intended to
`high-technology su
`ment of the subjec
`equations are avoide
`result, and the basi~
`•
`I
`of the underlymg as,
`idea or concept is a
`The advent of in
`circuit design technl
`analog integrated c
`constraints and gro~
`practicing electroni~
`and applications of
`rigorously and fro
`for graduate study ij
`This book is an u1
`Circuit Design (put
`~
`.
`analog IC design t~
`have occurred in the
`has been the "micro~
`growth of digital s
`evolution and advan
`interface with digital
`have evolved which
`
`1'
`-I:
`
`I ..
`
`l.
`
`Samsung/Dell, Exh. 1031, p. 3
`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

`

`PREFACE
`
`J
`
`·\
`
`I
`
`The contents and organization of this book are primarily aimed at the practicing
`engineer in the field of solid-state electronics. It is intended as a valuable reference
`for the IC designer and user alike. For the analog IC designer, it provides rigorous
`design guidelines and examples, while for the user, it offers a detailed analysis of
`various classes of analog circuits, points out their design philosophy, capabilities,
`and limitations, and presents application examples and guidelines.
`It is intended to be an easy and smooth reading book on a rapidly evolving,
`high-technology subject. To this end, the lengthy and detailed mathematical treat(cid:173)
`ment of the subject matter is minimized. Long derivations of device or circuit
`equations are avoided whenever possible; instead, the emphasis is placed on the end
`result, and the basic design philosophy leading up to it, with a clear understanding
`of the underlying assumptions and trade-offs. Whenever possible, each new design
`idea or concept is also demonstrated with a practical example.
`The advent of integrated circuit technology has altered many of the established
`circuit design techniques and principles. This is particularly evident in the field of
`analog integrated circuits where the designer is faced with a new set of design
`constraints and ground rules. In writing this book, it is my intention to educate the
`practicing electronics engineer in the fundamental design principles, capabilities,
`and applications of monolithic analog circuits. However, the subject matter is treated
`rigorously and from a fundamental viewpoint, to make this book suitable as a text
`for graduate study in semiconductor circuits.
`This book is an updated sequel to an earlier book by the author, Analog Integrated
`Circuit Design (published by Van Nostrand Reinhold, 1972) which covered the
`analog IC design technology of the 1960's. Since then, many significant changes
`have occurred in the world of microelectronics. Perhaps the most important of these
`has been the "microprocessor revolution," which has resulted in a truly revolutionary
`growth of digital signal-processing techniques. In tum, this has led to a rapid
`evolution and advancement of analog circuit methods, particularly in the areas that
`interface with digital techniques and technologies. As a result, complete LSI systems
`have evolved which combine complex analog and digital functions on the same chip.
`
`V
`
`Canada.
`
`ork
`the
`.rmission
`
`·essed to
`;, Inc.
`
`Data:
`
`ssign.
`
`ar
`
`53
`
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`
`

`

`vi
`
`PREFACE
`
`A great deal of this development has been possible by extending the capabilities of
`MOS devices and process technology to cover analog functions. Consequently,
`analog IC design using MOS technology has rapidly evolved into a major area of
`growth. These developments of recent years are profoundly reflected in the contents
`and the organization of this book.
`In the preparation of the text, it is assumed that the reader is familiar with the
`basic theory and principles of solid-state devices. Therefore, the solid-state device
`theory, which is already well covered elsewhere in the literature, is reviewed only
`briefly, and almost all of the space is devoted to circuit approaches unique to
`monolithic integrated circuits. Hybrid integrated circuits, which represent an area of
`overlap between discrete and monolithic circuits, are not covered explicitly.
`The text of the book is comprised of fifteen chapters which follow a logical
`sequence in the form of three "sections." The first section of the book, comprised
`of Chapters 1-3, reviews the basic "tools" of analog IC design and fabrication,
`namely, process technology, IC components, and techniques for placing these
`components on the chip, that is, the chip layout. These chapters are intended to
`familiarize the designer with the physical structures, advantages, and limitations of
`monolithic components. This knowledge is imperative to an analog IC design
`engineer since a successful design is one that efficiently utilizes the advantages of
`monolithic devices while avoiding their shortcomings.
`The second section of the text, made up of Chapters 4-6, covers the basic
`"building blocks," or subcircuits, of analog IC design. One important chapter in this
`section, Chapter 6, deals with the use of MOS technology in analog or combined
`analog/digital LSI design. All the subcircuits covered in this section serve as essen(cid:173)
`tial building blocks of the complex IC designs that are covered in the remainder of
`the book.
`The third and main section of the book, comprised of Chapters 7-15, covers the
`entire field of analog integrated circuits by dividing them into functional categories
`and then examining each category separately. Thus, for example, circuit classes
`such as operational amplifiers, multipliers, oscillators, phase-locked loops, filters,
`and data conversion circuits are examined separately. In this section, particular
`emphasis is given to the recent developments in the field of analog circuits, partic(cid:173)
`ularly in the areas of switched-capacitor filters, switching regulators, voltage(cid:173)
`controlled oscillators, high-resolution data conversion circuits, and the precision
`reference circuitry associated with them.
`Part of the material in this book is patterned after a sequence of graduate level
`courses in integrated electronics which I taught at Santa Clara University. Therefore,
`when preceded by courses on solid-state circuits and semiconductor electronics, this
`book will be well suited for a senior or graduate level course.
`I am grateful to many people who have contributed directly or indirectly to the
`preparation of this book. In particular, I would like to thank my wife, Karen, who
`has been a constant source of encouragement for me during the long years of effort
`that have gone into this book. I would also like to extend my appreciation to many
`colleagues and associates in the IC industry for their.assistance and guidance in the
`
`Samsung/Dell, Exh. 1031, p. 5
`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

`

`PREFACE
`
`vii
`
`organization and technical accuracy of the text. I am particularly grateful to the
`management of Exar Integrated Systems, Inc., for providing me the time to work
`on this book, and to Ms. Sue Wooldridge who has patiently typed and retyped the
`draft of the manuscript several times over.
`
`ALAN B. GREB ENE
`
`Saratoga, California
`August 1983
`
`PREFACE
`
`capabilities of
`consequently'
`. r area of
`a rnaJO
`in the contents
`
`'liar with the
`. d-state device
`reviewed only
`es unique to
`ent an area of
`licitly•
`ow a logical
`comprised
`fabrication,
`lacing these
`intended to
`itations of
`IC design
`vantages of
`
`.,t
`
`('
`
`i
`I
`I
`
`Samsung/Dell, Exh. 1031, p. 6
`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

`

`I'
`
`~l
`
`I
`'~ I
`
`CONTENTS
`
`CHAPTER 1. INTEGRATED-CIRCUIT FABRICATION
`
`1
`
`The Planar Process 1
`1.1
`1.2 Electrical Resistivity of Silicon 4
`1.3
`Solid-State Diffusion 5
`1.4 Epitaxial Deposition 12
`1.5 Oxidation of Silicon 14
`1. 6
`Photo masking 17
`1. 7
`Ion Implantation 20
`1.8 Thin-Film Processes 22
`1.9 Bipolar Integrated-Circuit Fabrication Steps 26
`1.10 Modifications of Basic Process 31
`1.11 Assembly and Packaging 38
`1.12 Integrated-Circuit Packages 41
`1. 13 Testing of Integrated Circuits 46
`1.14 Reliability Considerations 4 7
`
`CHAPTER 2. ACTIVE DEVICES IN INTEGRATED CIRCUITS
`
`53
`
`npn Transistors 54
`2.1
`2.2 npn Transistors for Special Applications 75
`2.3 pnp Transistors 83
`2.4 Junction Field-Effect Transistors 95
`2.5 MOS Field-Effect Transistors 106
`
`CHAPTER 3. PASSIVE COMPONENTS: DIODES, RESISTORS,
`AND CAPACITORS
`
`Part I
`3.1
`
`Integrated Diodes
`Junction Diodes 122
`
`121
`
`122
`
`ix
`
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`
`

`

`x
`
`CONTINB
`
`3.2
`3. 3
`
`Schottky Diodes 126
`Zener Diodes 130
`
`Integrated Resistors
`Part II
`3 .4 Diffused Resistors 136
`3.5
`Pinched Resistors 144
`3.6 Epitaxial Resistors 147
`3.7
`Ion-Implanted Resistors 150
`3.8 Thin-Film Resistors 154
`3.9 Trimming of Resistors 155
`
`Part Ill Integrated Capacitors
`3.10 Junction Capacitors 160
`3.11 MOS Capacitors
`164
`
`CHAPTER 4. BIAS CIRCUITS
`
`4.1 Constant-Current Stages 170
`4.2 pnp Current Sources 183
`4.3 Voltage-Controlled Current Sources 187
`4.4 Supply-Independent Biasing 189
`4.5 Voltage Sources 193
`4.6 DC Level-Shift Stages 197
`4. 7 Temperature-Independent Biasing 204
`4.8
`Stabilization of Chip Temperature 210
`
`CHAPTER 5. BASIC GAIN STAGES
`
`5 .1 Differential Gain Stages 215
`5.2 Gain Stages with Active Loads 233
`5.3 Output Stages 246
`
`CHAPTER 6. ANALOG DESIGN WITH MOS TECHNOLOGY
`
`6.1 Basic Characteristics of MOS Transistors 264
`6.2 Building Blocks of NMOS Analog Design 271
`6.3 Analog Design with Depletion-Mode Load Devices 284
`6.4 Analog Design with CMOS Technology 290
`6.5 MOS Voltage References 299
`6.6 MOS Transistor as an Analog Switch 303
`
`135
`
`160
`
`169
`
`215
`
`263
`
`Samsung/Dell, Exh. 1031, p. 8
`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

`

`r
`
`.
`
`)
`
`\
`I ,
`
`CONTENTS
`
`CHAPTER 7. OPERATIONAL AMPLIFIERS
`
`xi
`
`309
`
`7.1
`7.2
`7.3
`7.4
`7.5
`7.6
`7.7
`7.8
`7.9
`
`Fundamentals of Operational Amplifiers 310
`Circuit Configurations for Monolithic Operational Amplifiers 320
`Frequency Compensation 325
`Large-Signal Operation 333
`Input Stage Design 339
`Practical Op Amp Circuits 350
`MOS Operational Amplifiers 368
`Special-Purpose Op Amp 375
`Other Operational Amplifier-Based Circuits: Buffers and
`Comparators 383
`
`CHAPTER 8. WIDEBAND AMPLIFIERS
`
`397
`
`8.1
`8.2
`8.3
`8.4
`8.5
`8.6
`8.7
`8.8
`8.9
`8.10
`8.11
`8.12
`
`General Design Considerations 398
`High-Frequency Transistors 399
`High-Frequency Device Models 401
`Frequency Response of Single-Transistor Gain Stages
`Compound Devices 410
`Neutralization of Collector-Base Capacitance 415
`Amplifier Circuits Using Local Feedback 417
`Amplifier Circuits Using Overall Feedback 423
`Dual-Loop Feedback Amplifiers 429
`Root-Locus Techniques 433
`Current Amplifiers: The Gilbert Gain Cell 437 ·
`Electronic Gain Control 443
`
`403
`
`CHAPTER 9. ANALOG MULTIPLIERS AND MODULATORS
`
`451
`
`9 .1 A Classification of Modulators and Multipliers 451
`9.2 Properties of an Analog Multiplier 452
`9.3 Applications of an Analog Multiplier 454
`9 .4 Variable-Transconductance Multiplier 456
`9.5 Four-Quadrant Multipliers with Wide Dynamic Range 459
`9.6 Practical Analog Multiplier Circuits 462
`9.7 Balanced Modulators 469
`9.8 Applications of Balanced Modulators 472
`
`CHAPTER 10. VOLTAGE REGULATORS
`
`Part I
`10.1
`
`Series Regulators
`Fundamentals of Series Regulators 482
`
`!·
`
`481
`
`482
`
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`
`

`

`~i
`
`CONTINH
`
`10.2 Protection Circuits 489
`10.3
`Practical Series Regulator Circuits 497
`10.4 Layout Considerations for Power Circuits 509
`10.5 Failure Mechanisms in Power Devices 512
`
`Switching Regulators
`Part II
`10.6 Fundamentals of Switching Regulators 514
`10.7 Modes of Operation with Inductive Output Circuits 521
`10.8 Efficiency Considerations 527
`10.9 Practical Switching Regulator Circuits 528
`
`514
`
`CHAPTER 11. INTEGRATED-CIRCUIT OSCILLATORS AND TIMERS
`
`541
`
`Integrated-Circuit Oscillators
`Part I
`11.1 An Overview of Oscillator Types 541
`11.2 Tuned Oscillator Circuits 543
`11.3 Relaxation Oscillators 556
`11.4 Emitter-Coupled Multivibrators 571
`11.5 CMOS Relaxation Oscillators 581
`11.6 Limitations of Relaxation Oscillators 586
`11.7 Monolithic Wave-Shaping Techniques 591
`
`Part II Integrated-Circuit Timers
`11.8 Fundamentals of Integrated-Circuit Timers 599
`11. 9 One-Shot Timers 600
`11.10 Timer/Counter Circuits 609
`
`541
`
`599
`
`Part Ill Frequency-to-Voltage and Voltage-to-Frequency Converters
`11.11 Voltage-to-Frequency Converters 615
`11.12 Frequency-to-Voltage Converters 622
`
`615
`
`CHAPTER 12. PHASE-LOCKED-LOOP CIRCUITS
`
`Fundamentals of Phase-Locked Loops
`Part I
`Principle of Operation of a PLL System 628
`12.1
`12.2 PLL in Locked Condition 635
`12.3 Effects of Loop Filter and Loop Gain on PLL Performance 637
`12.4 Applications of Phase-Locked Loops 647
`
`627
`
`628
`
`Building Blocks of Monolithic Phase-Locked-Loop Circuits
`Part II
`12.5 Phase Detectors 657
`
`657
`
`Samsung/Dell, Exh. 1031, p. 10
`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

`

`CONTENTS
`
`12. 6 Voltage-Controlled Oscillators 668
`12.7 Monolithic PLL Design Example 673
`
`CHAPTER 13. INTEGRATED-CIRCUIT FILTERS
`
`A Review of Filter Characteristics
`Part I
`Basic Filter Specifications 681
`13 .1
`13.2 A Review of Basic Filter Types 684
`13.3 Biquadratic Filter Function 687
`13.4 Sensitivity Considerations 696
`13.5 Analog Sampled-Data Filters 698
`
`Part II Switched-Capacitor Filters
`13.6 Fundamentals of Switched-Capacitor Circuits 703
`13. 7 Characteristics of MOS Circuit Elements 712
`13. 8 Effects of Parasitic Capacitances 719
`13. 9 Practical Design Constraints 725
`13.10 Second-Order Filter Configurations 727
`13.11 Higher Order Filters 739
`13.12 Applications and Limitations of Switched-Capacitor Filters 750
`
`CHAPTER 14. DATA CONVERSION CIRCUITS:
`DIGIT AL-TO-ANALOG CONVERTERS
`
`Principles of DI A Conversion 754
`14.1
`14.2 Basic DI A Converter Circuits 757
`14.3 Definitions of DI A Converter Terms 764
`14.4 DI A Converter Architecture 770
`14.5 Current Switches 780
`14.6 Resistor and Capacitor Networks 785
`14.7 Voltage References 790
`14.8 Biasing of Current Sources 791
`14.9 Effects of Device Mismatches 795
`14.10 Accuracy Considerations 799
`14.11 Monolithic Design Examples 802
`14.12 Ultraprecision DI A Converter Circuits 817
`
`CHAPTER 15. DATA CONVERSION CIRCUITS:
`ANALOG-TO-DIGIT AL CONVERTERS
`
`Fundamentals of AID Conversion 827
`15.1
`15.2 Integrating-Type AID Converters 835
`
`I,
`
`/\
`
`xiii
`
`679
`
`681
`
`703
`
`753
`
`825
`
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`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

`

`xiv
`
`CONTENTS
`
`15.3 Digital-Ramp-Type AID Converters 846
`15.4 Successive-Approximation AID Converters 847
`15.5
`Successive-Approximation Converters Using MOS Technology 852
`15.6 Parallel AID Converters 865
`15. 7 Other High-Speed AID Conversion Techniques 871
`15.8 Nonlinear AID Converters for Telecommunications 873
`15.9 An Overview of AID Converter Techniques 876
`
`INDEX
`
`881
`
`Samsung/Dell, Exh. 1031, p. 12
`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

`

`•
`
`CHAPTER TEN
`
`VOLTAGE REGULATORS
`
`The function of a voltage regulator is to provide a well-specified and constant
`output voltage level from a poorly specified and sometimes fluctuating input
`voltage. The output of the voltage regulator would then be used as the supply
`voltage for the other circuits in the system. In this manner, the fluctuations and
`random variations of a supply voltage under changing load conditions are essen(cid:173)
`tially eliminated.
`Since the regulation and control of supply voltage is one of the most funda(cid:173)
`mental and critical requirements of any electronic system design, the monolithic
`voltage regulator or power control circuits have become some of the essential
`building blocks of any analog or digital system. As a result, the monolithic
`voltage regulators, similar to the case of monolithic operational amplifiers have
`gained wide acceptance and have greatly simplified the tedious task of designing
`power supply circuits.
`Today, there are two very distinctly different types of IC voltage regulators
`which have gained wide acceptance and popularity. These are the series regu(cid:173)
`lators and the switching regulators. The series regulators control the output
`voltage by controlling the voltage drop across a power transistor which is
`connected in series with the load. The power transistor is operated in its linear
`region and conducts current continuously. The switching regulators, on the other
`hand, control the flow of power to the load by turning on and off one or more
`of the power switches connected in parallel or series with the load, and make use
`primarily of inductive energy storage elements to convert the switched current
`pulses into a continuous and regulated load current.
`Since the principles of operation and the design considerations associated
`with each of these classes of regulator circuits are quite different, this chapter
`is divided into two parts, covering each of these categories of regulator inte(cid:173)
`grated circuits.
`The first part of the chapter deals with the series-type voltage regulators. The
`design of series regulators often requires the inclusion of high-current power
`
`481
`
`Samsung/Dell, Exh. 1031, p. 13
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`
`

`

`482
`
`VO LTAG E REG U LATO RS
`
`10.1
`
`FUNDAMENTALS OF S
`
`transistors on the chip, which are capable of dissipating significant amounts of
`power. The presence of low-level signal-processing circuitry in very close prox(cid:173)
`imity to a power device on the same chip poses a number of special design
`problems due to thermal drifts and nonuniform temperature distribution on the
`chip, and therefore requires special layout and packaging considerations. In
`addition, special fault-protection circuitry is also needed on the chip to prevent
`the circuit bum-out due to accidental overloads or excessive heating. These
`problems and other related design considerations will be covered in the first part
`of this chapter. Several design examples associated with the commercially
`available series regulator integrated circuits will also be examined in order to
`illustrate the design principles and trade-offs involved.
`The second part of the chapter will deal with the pulse-width-modulated
`power control systems, or switching regulators. This part will cover both their
`principle of operation as well as the special design considerations, trade-offs,
`and protection circuitry associated with them.
`
`PART I: SERIES. REGULATORS
`
`10.1. FUNDAMENTALS OF SERIES REGULATORS
`
`Principle of Operation
`
`The series, or series-pass, type voltage regulator is connected in series between
`the load and unregulated supply line. It is a feedback circuit comprised of three
`main sections, as shown in Figure 10.1. These are the reference voltage element,
`the error amplifier, and the series-pass element. In most cases, a fourth section,
`
`the overload-protection 1
`against bum-out under a<
`With reference to the 1
`of operation of a series
`internal voltage referenc
`which is independent of
`changes. The error ampl:
`voltage Vs and generates
`across the pass element s
`voltage Vs is derived froi
`resistors R1 and Rz.
`Assuming that the en
`voltage drop across the p
`of the unregulated input '
`equal to
`
`where a is the feedback 1
`is,
`
`Assuming that the errc
`then Eq. (10. 1) simplifie
`
`Thus, the circuit prodi
`dent of the input voltage
`Figure 10. 2 shows a si
`For most applications, tl
`the order of 60- 70 dB,
`ential stage using active
`The voltage refereno
`reference (see Fig. 4.33)
`temperature stability cha
`Chapter 4, and will not l
`these circuits are in the r,
`order of 30-100 ppm/'C
`The pass element is nc
`of Figure 10.2. Often a
`pass element in order to
`
`the load. l
`
`Unregulated
`input
`ViN
`
`Reference
`voltage
`generator
`
`+
`
`Vn -j
`
`Pass
`element
`
`Regulated
`output
`---o Vo
`
`R1
`
`Vs:>R2
`
`~
`FIGURE 10.1. Simplified block diagram of series regulator.
`
`~
`
`Samsung/Dell, Exh. 1031, p. 14
`Samsung/Dell v. MYPAQ, IPR2022-00311
`
`

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