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`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`
`
`MICROCHIP TECHNOLOGY, INC.,
`Petitioner
`v.
`HD SILICON SOLUTIONS LLC,
`Patent Owner
`
`Case Nos. IPR2021-01420 & IPR2021-01421
`U.S. Patent No. 7,260,731
`Issue Date: August 21, 2007
`Title: SAVING POWER WHEN IN OR TRANSITIONING TO
`A STATIC MODE OF A PROCESSOR
`
`
`
`
`DECLARATION OF MAUREEN M. HONEYCUTT
`
`
`
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`
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`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 1 of 68
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`
`I, Maureen M. Honeycutt, declare as follows:
`
`1.
`
`I am employed by Texas Instruments, “TI.” My title is Senior
`
`Paralegal. I have personal knowledge of the facts set forth in this Declaration.
`
`2.
`
`TI is a leading global semiconductor design and manufacturing
`
`company. The publication of technical information, including datasheets that
`
`describe the performance and other characteristics of TI products, is a regular
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`practice for TI.
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`3.
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`I have knowledge of TI’s practices for checking in and publishing
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`technical documents, including on TI’s public website: www.ti.com .
`
`4.
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`For documents TI publishes, including documents published to the
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`Internet, it is TI’s usual practice to assign a literature number to the publication.
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`5.
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`For each literature number assigned, TI tracks the date the literature
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`with the assigned number is approved for publication on www.ti.com .
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`6.
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`TI’s usual practice is to associate each literature number with the
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`relevant TI product(s) and/or product family(s) on www.ti.com .
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`7.
`
`Publications released to the internet for each associated product/product
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`family are made available on TI’s website, www.ti.com .
`
`8.
`
`9.
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`TI’s website is, and at all times relevant to this declaration, searchable.
`
`Exhibit 1 hereto is a true and correct copy of Literature Number
`
`SLVS171 for the TI’s datasheet titled “TPS5210 Programmable Synchronous-Buck
`
`1
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`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 2 of 68
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`Regulator Controller” which I obtained from TI’s Records.
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`10. Exhibit 2 hereto is a true and correct copy of TI’s “Channel Media
`
`Authorization for Literature Number SLVS171” which I obtained from TI’s records.
`
`This document includes two entries for the SLVS171 datasheet: an Internet “Date to
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`Add” of “24-SEP-1998,” and a “Date to Withdraw” as “13-MAY-1999.” Based on
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`TI’s regular practice, once an Internet “Date to Add” for a document is entered, the
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`document was available on TI’s website within 24 hours of that “Date to Add” date.
`
`Similarly, once a “Date to Withdraw” for a document is entered, the document was
`
`removed from the Internet within 24 hours of that “Date to Withdraw” date.
`
`11. Accordingly, SLVS171 datasheet (Exhibit 1) was available to the
`
`public within 24 hours of September 24, 1998. The SLVS171 datasheet (Exhibit 1)
`
`remained available to the public on TI’s website until May 13, 1999 when it was
`
`replaced by a new revision, i.e. Literature Number SLVS171A. During that period,
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`SLVS171 datasheet (Exhibit 1) was available for download at www.ti.com at no
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`cost. Users were not required to sign up for an account, or “log-in,” to download the
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`SLVS171 datasheet (Exhibit 1).
`
`12. Exhibit 3 hereto is a true and correct copy of Literature Number
`
`SLVS171A for the TI’s datasheet titled “TPS5210 Programmable Synchronous-
`
`Buck Regulator Controller” which I obtained from TI’s records.
`
`13. Exhibit 4 hereto is a true and correct copy of TI’s “Channel Media
`
`2
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`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 3 of 68
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`Authorization for Literature Number SLVS171A,” which I obtained from TI’s
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`records. This document includes one Internet entry for the SLVS171A: an Internet
`
`“Date to Add” of “12-APR-1999.” Based on TI’s regular practice, once an Internet
`
`“Date to Add” for a document is entered, the document was available on TI’s website
`
`within 24 hours of that “Date to Add” date.
`
`14. Accordingly, SLVS171A datasheet (Exhibit 3) was available to the
`
`public within 24 hours of April 12, 1999. The SLVS171A datasheet (Exhibit 3)
`
`continues to be available to the public and is available for download at www.ti.com
`
`at no cost. Users are not required to sign up for an account, or “log-in,"
`
`15.
`
`I declare under penalty of perjury under the Laws of the United States
`
`of America that the foregoing is true and correct to the best of my knowledge. I
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`declare that all statements made herein of my own knowledge are true and that all
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`statements made on information and belief are believed to be true, and further that
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`these statements were made with the knowledge that willful false statements and the
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`like so made are punishable by fine or imprisonment, or both, under Section 1001 of
`
`Title 18 of the United States Code.
`
`
`
`Dated: August 26, 2021
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`3
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`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 4 of 68
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`EXHIBIT 1
`EXHIBIT 1
`
`MICROCHIP TECHNOLOGYINC. EXHIBIT 1047
`Page 5 of 68
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`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 5 of 68
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`
`TPS5210
`PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER
`
`
`SLVS171 – SEPTEMBER 1998
`
`DW OR PWP PACKAGE
`(TOP VIEW)
`
`28
`27
`26
`25
`24
`23
`22
`21
`20
`19
`18
`17
`16
`15
`
`PWRGD
`VID0
`VID1
`VID2
`VID3
`VID4
`INHIBIT
`IOUTLO
`LOSENSE
`HISENSE
`BOOTLO
`HIGHDR
`BOOT
`VCC
`
`1 2 3 4
`
`
`
`5 6 7 8 9 1
`
`0
`11
`12
`13
`14
`
`IOUT
`DROOP
`OCP
`VHYST
`VREFB
`VSENSE
`ANAGND
`SLOWST
`BIAS
`LODRV
`LOHIB
`DRVGND
`LOWDR
`DRV
`
`D ±1% Reference over Full Operating
`Temperature Range
`D Synchronous Rectifier Driver for Greater
`than 90% Efficiency
`D Programmable Output Voltage Range of
`1.3 V to 3.5 V
`D User–Selectable Hysteretic Type Control
`D Droop Compensation for Improved Load
`Transient Regulation
`D Adjustable Overcurrent Protection
`D Programmable Softstart
`D Overvoltage Protection
`D Active Deadtime Control
`D Power Good Output
`D Internal Bootstrap Schottky Diode
`D Low Supply Current . . . 3-mA Typ
`
`
`description
`
`The TPS5210 is a synchronous-buck regulator controller which provides an accurate, programmable supply
`voltage to microprocessors. An internal 5-bit DAC is used to program the output voltage to within a range of 1.3 V
`to 3.5 V. A hysteretic controller with user-selectable hysteresis and programmable droop compensation is used
`to dramatically reduce overshoot and undershoot caused by load transients. Propagation delay from the
`comparator inputs to the output drivers is less than 250 ns. Overcurrent shutdown and crossover protection for
`the output drivers combine to eliminate destructive faults in the output FETs. The softstart current source is
`proportional to the reference voltage, thereby eliminating variation of the softstart timing when changes are
`made to the output voltage. PWRGD monitors the output voltage and pulls the open-collector output low when
`the output drops 7% below the nominal output voltage. An overvoltage circuit disables the output drivers if the
`output voltage rises 15% above the nominal value. The inhibit pin can be used to control power sequencing.
`Inhibit and undervoltage lockout assures the 12-V supply voltage and system supply voltage (5 V or 3.3 V) are
`within proper operating limits before the controller starts. The output driver circuits include 2-A drivers with
`internal 8-V gate-voltage regulators. The high-side driver can be configured either as a ground-referenced
`driver or as a floating bootstrap driver. The TPS5210 is available in a 28-pin SOIC package and a 28-pin TSSOP
`PowerPAD package. It operates over a junction temperature range of 0°C to 125°C.
`
`AVAILABLE OPTIONS
`PACKAGES
`
`TJ
`
`SOIC
`(DW)
`
`TSSOP
`(PWP)
`
`0°C to 125°C
`TPS5210PWPR
`TPS5210DW
`The DW package is available taped and reeled. Add R suffix to device
`type (e.g., TPS5210DWR).
`
`Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
`Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
`
`PRODUCTION DATA information is current as of publication date.
`Products conform to specifications per the terms of Texas Instruments
`standard warranty. Production processing does not necessarily include
`testing of all parameters.
`
`Copyright  1998, Texas Instruments Incorporated
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`1
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`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 6 of 68
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`

`

`TPS5210
`PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER
`
`SLVS171 – SEPTEMBER 1998
`
`functional block diagram
`
`DRVGND
`
`LOWDR
`
`BOOTLO
`
`HIGHDR
`BOOT
`
`12
`
`13
`
`18
`
`17
`16
`
`DRV
`
`BIAS
`
`4
`9 1
`
`HIGHDR
`
`Delay
`Edge
`Rising
`
`IOUT
`
`1
`
`2x
`
`–+
`
`Fault
`
`Q
`
`S
`
`R
`
`Shutdown
`
`19
`
`21
`
`20
`
`28
`
`IOUTLOHISENSE
`
`LOSENSE
`
`PWRGD
`
`7
`
`ANAGND
`
`15
`VCC
`
`1.15 Vref
`VOVP
`
`Deglitch
`
`Deglitch
`
`+–
`
`100 mV
`
`+
`
`UVLO
`
`NOCPU
`
`VCC
`
`10 V
`
`2 V
`
`Decode
`11111
`
`VID4
`VID3
`VID2
`VID1
`VID0
`
`8
`
`SLOWST
`
`3
`
`OCP
`
`22
`
`INHIBIT
`
`2
`
`•
`POST OFFICE BOX 655303 DALLAS, TEXAS 75265
`
`LODRV
`10
`
`LOHIB
`11
`
`VREFBDROOPVHYSTVSENSE
`
`6
`
`4
`
`2
`
`5
`
`VID0VID1VID2VID3VID4
`23
`
`24
`
`25
`
`26
`
`27
`
`Setting
`
`Hysteresis
`
`IVREFB
`
`– +
`
`–
`
`+S
`
`VREF
`
`Decoder
`
`and
`MUX
`VID
`
`Shutdown
`
`Bandgap
`
`DRV REG
`
`Bias
`Analog
`
`PREREG
`
`IVREFB
`
`5
`
`Analog Bias
`
`VSENSE
`
`Shutdown
`
`Comp
`Hysteresis
`
`–+
`
`CM Filters
`
`Comp
`Slowstart
`
`–+
`
`VCC
`
`HIGHIN
`
`0.93 Vref
`VPGD
`
`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 7 of 68
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`

`

`
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`TPS5210
`PROGRAMMABLE SYNCHRONOUS BUCK REGULATOR CONTROLLER
`
`
`SLVS171 – SEPTEMBER 1998
`
`TERMINAL
`NAME
`NO.
`ANAGND
`7
`BIAS
`9
`BOOT
`16
`BOOTLO
`18
`
`DROOP
`
`DRV
`DRVGND
`HIGHDR
`HISENSE
`
`INHIBIT
`
`IOUT
`
`IOUTLO
`
`LODRV
`LOHIB
`
`LOSENSE
`
`LOWDR
`OCP
`PWRGD
`
`SLOWST
`
`VCC
`VHYST
`
`VID0
`VID1
`VID2
`VID3
`VID4
`
`VREFB
`VSENSE
`
`2
`
`14
`12
`17
`19
`
`22
`
`1
`
`21
`
`10
`11
`
`20
`
`13
`3
`28
`
`8
`
`15
`4
`
`27
`26
`25
`24
`23
`
`5
`6
`
`Terminal Functions
`
`
`
`I/OI/O
`
`
`
`DESCRIPTIONDESCRIPTION
`
`O
`I
`O
`
`I
`
`O
`
`O
`I
`
`I
`
`O
`
`O
`
`I
`I
`
`I
`
`O
`I
`O
`
`O
`
`I
`
`I
`I
`I
`I
`I
`
`O
`I
`
`Analog ground
`Analog BIAS pin. A 1-m F ceramic capacitor should be connected from BIAS to ANAGND.
`Bootstrap. Connect a 1-m F low-ESR capacitor from BOOT to BOOTLO.
`Bootstrap low. Connect BOOTLO to the junction of the high-side and low-side FETs for floating drive
`configuration. Connect BOOTLO to PGND for ground reference drive configuration.
`
`Droop voltage. Voltage input used to set the amount of output-voltage set-point droop as a function of load
`current. The amount of droop compensation is set with a resistor divider between IOUT and ANAGND.
`Drive regulator for the FET drivers. A 1-m F ceramic capacitor should be connected from DRV to DRVGND.
`Drive ground. Ground for FET drivers. Connect to FET PWRGND.
`High drive. Output drive to high-side power switching FETs
`High current sense. For current sensing across high-side FETs, connect to the drain of the high-side FETs; for
`optional resistor sensing scheme, connect to power supply side of current-sense resistor placed in series with
`high-side FET drain.
`Disables the drive signals to the MOSFET drivers. Can also serve as UVLO for system logic supply (either 3.3 V
`or 5 V).
`
`Current out. Output voltage on this pin is proportional to the load current as measured across the Rds(on) of the
`high-side FETs. The voltage on this pin equals 2×Rds(on)×IOUT. In applications where very accurate current
`sensing is required, a sense resistor should be connected between the input supply and the drain of the high-side
`FETs.
`Current sense low output. This is the voltage on the LOSENSE pin when the high-side FETs are on. A ceramic
`capacitor should be connected from IOUTLO to HISENSE to hold the sensed voltage while the high-side FETs
`are off. Capacitance range should be between 0.033 m F and 0.1 m F.
`Low drive enable. Normally tied to 5 V. To activate the low-side FETs as a crowbar, pull LODRV low.
`Low side inhibit. Connect to the junction of the high and low side FETs to control the anti-cross-conduction and
`eliminate shoot-through current. Disabled when configured in crowbar mode.
`
`Low current sense. For current sensing across high-side FETs, connect to the source of the high-side FETs; for
`optional resistor sensing scheme, connect to high-side FET drain side of current-sense resistor placed in series
`with high-side FET drain.
`Low drive. Output drive to synchronous rectifier FETs
`Over current protection. Current limit trip point is set with a resistor divider between IOUT and ANAGND.
`Power good. Power Good signal goes high when output voltage is within 7% of voltage set by VID pins.
`Open-drain output.
`
`Slow Start (soft start). A capacitor from SLOWST to ANAGND sets the slowstart time.
`Slowstart current = IVREFB/5
`12-V supply. A 1-m F ceramic capacitor should be connected from VCC to DRVGND.
`HYSTERESIS set pin. The hysteresis is set with a resistor divider from VREFB to ANAGND.
`The hysteresis window = 2 × (VREFB – VHYST)
`Voltage Identification input 0
`Voltage Identification input 1
`Voltage Identification input 2
`Voltage Identification input 3
`Voltage Identification input 4. Digital inputs that set the output voltage of the converter. The code pattern for
`setting the output voltage is located in Table 1. Internally pulled up to 5 V with a resistor divider biased from VCC.
`Buffered reference voltage from VID network
`Voltage sense Input. To be connected to converter output voltage bus to sense and control output voltage. It is
`recommended an RC low pass filter be connected at this pin to filter noise.
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`3
`
`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 8 of 68
`
`

`

`TPS5210
`PROGRAMMABLE SYNCHRONOUS BUCK REGULATOR CONTROLLER
`
`
`SLVS171 – SEPTEMBER 1998
`
`
`
`detailed description
`
`VREF
`The reference/voltage identification (VID) section consists of a temperature-compensated bandgap reference
`and a 5-bit voltage selection network. The 5 VID terminals are inputs to the VID selection network and are
`TTL-compatible inputs internally pulled up to 5 V by a resistor divider connected to VCC. The VID codes conform
`to the Intel VRM 8.3 DC-DC Converter Specification for voltage settings between 1.8 V and 3.5 V, and they are
`decremented by 50 mV, down to 1.3 V, for the lower VID settings. Refer to Table 1 for the VID code settings.
`The output voltage of the VID network, VREF, is within ±1% of the nominal setting over the VID range of 1.3 V
`to 2.5 V, including a junction temperature range of 5°C to +125°C, and a VCC supply voltage range of 11.4 V
`to 12.6 V. The output of the reference/VID network is indirectly brought out through a buffer to the VREFB pin.
`The voltage on this pin will be within 2% of VREF. It is not recommended to drive loads with VREFB, other than
`setting the hysteresis of the hysteretic comparator, because the current drawn from VREFB sets the charging
`current for the slowstart capacitor. Refer to the slowstart section for additional information.
`
`hysteretic comparator
`
`The hysteretic comparator regulates the output voltage of the synchronous-buck converter. The hysteresis is
`set by 2 external resistors and is centered on VREF. The 2 external resistors form a resistor divider from VREFB
`to ANAGND, with the output voltage connecting to the VHYST pin. The hysteresis of the comparator will be equal
`to twice the voltage difference between the VREFB and VHYST pins. The propagation delay from the comparator
`inputs to the driver outputs is 250 ns (maximum). The maximum hysteresis setting is 60 mV.
`
`low-side driver
`
`The low-side driver is designed to drive low-Rds(on) n-channel MOSFETs. The current rating of the driver is
`2 A, source and sink. The bias to the low-side driver is internally connected to the DRV regulator.
`
`high-side driver
`
`The high-side driver is designed to drive low-Rds(on) n-channel MOSFETs. The current rating of the driver is
`2 A, source and sink. The high-side driver can be configured either as a ground-referenced driver or as a floating
`bootstrap driver. When configured as a floating driver, the bias voltage to the driver is developed from the DRV
`regulator. The internal bootstrap diode, connected between the DRV and BOOT pins, is a Schottky for improved
`drive efficiency. The maximum voltage that can be applied between BOOT and DRVGND is 30 V. The driver
`can be referenced to ground by connecting BOOTLO to DRVGND, and connecting BOOT to either DRV or VCC.
`deadtime control
`
`Deadtime control prevents shoot-through current from flowing through the main power FETs during switching
`transitions by actively controlling the turn-on times of the MOSFET drivers. The high-side driver is not allowed
`to turn on until the gate-drive voltage to the low-side FETs is below 2 V; the low-side driver is not allowed to turn
`on until the voltage at the junction of the high-side and low-side FETs (Vphase) is below 2 V.
`
`current sensing
`
`Current sensing is achieved by sampling and holding the voltage across the high-side power FETs while the
`high-side FETs are on. The sampling network consists of an internal 60-W
` switch and an external ceramic hold
`capacitor. Recommended value of the hold capacitor is between 0.033 m F and 0.1 m F. Internal logic controls
`the turn-on and turn-off of the sample/hold switch such that the switch does not turn on until the Vphase voltage
`transitions high, and the switch turns off when the input to the high-side driver goes low. The sampling will occur
`only when the high-side FETs are conducting current. The voltage on the IOUT pin equals 2 times the sensed
`high-side voltage. In applications where a higher accuracy in current sensing is required, a sense resistor can
`be placed in series with the high-side FETs, and the voltage across the sense resistor can be sampled by the
`current sensing circuit.
`
`4
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 9 of 68
`
`

`

`
`
`TPS5210
`PROGRAMMABLE SYNCHRONOUS BUCK REGULATOR CONTROLLER
`
`
`SLVS171 – SEPTEMBER 1998
`
`detailed description (continued)
`
`droop compensation
`The droop compensation network reduces the load transient overshoot/undershoot on VO, relative to VREF. VO
`is programmed to a voltage greater than VREF by an external resistor divider from VO to VSENSE to reduce the
`undershoot on VO during a low-to-high load transient. The overshoot during a high-to-low load transient is
`reduced by subtracting the voltage on DROOP from VREF. The voltage on IOUT is divided with an external
`resistor divider, and connected to DROOP.
`
`inhibit
`
`INHIBIT is a TTL-compatible digital input used to enable the controller. When INHIBIT is low, the output drivers
`are low and the slowstart capacitor is discharged. When INHIBIT goes high, the short across the slowstart
`capacitor is released and normal converter operation begins. When the system-logic supply is connected to
`INHIBIT, it also controls power sequencing by locking out controller operation until the system-logic supply
`exceeds the input threshold voltage of the inhibit circuit. The 12-V supply and the system logic supply (either
`5 V or 3.3 V) must be above UVLO thresholds before the controller is allowed to start up. The start threshold
`is 2.1 V and the hysteresis is 100 mV for the INHIBIT comparator.
`VCC undervoltage lockout (UVLO)
`The undervoltage lockout circuit disables the controller while the VCC supply is below the 10-V start threshold
`during power up. When the controller is disabled, the output drivers will be low and the slowstart capacitor is
`discharged. When VCC exceeds the start threshold, the short across the slowstart capacitor is released and
`normal converter operation begins. There is a 2-V hysteresis in the undervoltage lockout circuit for noise
`immunity.
`
`slowstart
`The slowstart circuit controls the rate at which VO powers up. A capacitor is connected between SLOWST and
`ANAGND and is charged by an internal current source. The current source is proportional to the reference
`voltage, so that the charging rate of Cslowst is proportional to the reference voltage. By making the charging
`current proportional to VREF, the power-up time for VO will be independent of VREF. Thus, CSLOWST can remain
`the same value for all VID settings. The slowstart charging current is determined by the following equation:
`Islowstart = I(VREFB) / 5 (amps)
`Where I(VREFB) is the current flowing out of VREFB.
`It is recommended that no additional loads be connected to VREFB, other than the resistor divider for setting the
`hysteresis voltage. The maximum current that can be sourced by the VREFB circuit is 500 m A. The equation for
`setting the slowstart time is:
`tSLOWST = 5 × CSLOWST × RVREFB (seconds)
`Where RVREFB is the total external resistance from VREFB to ANAGND.
`power good
`The power-good circuit monitors for an undervoltage condition on VO. If VO is 7% below VREF, then the PWRGD
`pin is pulled low. PWRGD is an open-drain output.
`
`overvoltage protection
`The overvoltage protection (OVP) circuit monitors VO for an overvoltage condition. If VO is 15% above VREF,
`then a fault latch is set and both output drivers are turned off. The latch will remain set until VCC goes below the
`undervoltage lockout value. A 3-m s deglitch timer is included for noise immunity. Refer to the LODRV section
`for information on how to protect the microprocessor against overvoltages due to a shorted fault across the
`high-side power FET.
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`5
`
`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 10 of 68
`
`

`

`TPS5210
`PROGRAMMABLE SYNCHRONOUS BUCK REGULATOR CONTROLLER
`
`
`SLVS171 – SEPTEMBER 1998
`
`
`
`detailed description (continued)
`
`overcurrent protection
`
`The overcurrent protection (OCP) circuit monitors the current through the high-side FET. The overcurrent
`threshold is adjustable with an external resistor divider between IOUT and ANAGND, with the divider voltage
`connected to the OCP pin. If the voltage on OCP exceeds 100 mV, then a fault latch is set and the output drivers
`are turned off. The latch will remain set until VCC goes below the undervoltage lockout value. A 3-m s deglitch
`timer is included for noise immunity. The OCP circuit is also designed to protect the high-side power FET against
`a short-to-ground fault on the terminal common to both power FETs.
`
`drive regulator
`
`The drive regulator provides drive voltage to the output drivers. The minimum drive voltage is 7 V. The minimum
`short circuit current is 100 mA. Connect a 1-m F ceramic capacitor from DRV to DRVGND.
`LODRV
`
`The LODRV circuit is designed to protect the microprocessor against overvoltages that can occur if the high-side
`power FETs become shorted. External components to sense an overvoltage condition are required to use this
`feature. When an overvoltage fault occurs, the low-side FETs are used as a crowbar. LODRV is pulled low and
`the low-side FET will be turned on, overriding all control signals inside the TPS5210 controller. The crowbar
`action will short the input supply to ground through the faulted high-side FETs and the low-side FETs. A fuse
`in series with Vin should be added to disconnect the short-circuit.
`
`Table 1. Voltage Identification Codes
`
`VID TERMINALS
`(0 = GND, 1 = floating or pull-up to 5 V)
`VID3
`VID2
`VID1
`1
`1
`1
`1
`1
`1
`1
`1
`0
`1
`1
`0
`1
`0
`1
`1
`0
`1
`1
`0
`0
`1
`0
`0
`0
`1
`1
`0
`1
`1
`0
`1
`0
`0
`1
`0
`0
`0
`1
`0
`0
`1
`0
`0
`0
`0
`0
`0
`1
`1
`1
`1
`1
`1
`1
`1
`0
`1
`1
`0
`1
`0
`1
`1
`0
`1
`1
`0
`0
`
`VID4
`0
`0
`0
`0
`0
`0
`0
`0
`0
`0
`0
`0
`0
`0
`0
`0
`1
`1
`1
`1
`1
`1
`1
`
`VID0
`1
`0
`1
`0
`1
`0
`1
`0
`1
`0
`1
`0
`1
`0
`1
`0
`1
`0
`1
`0
`1
`0
`1
`
`VREF
`
`(Vdc)
`1.30
`1.35
`1.40
`1.45
`1.50
`1.55
`1.60
`1.65
`1.70
`1.75
`1.80
`1.85
`1.90
`1.95
`2.00
`2.05
`No CPU
`2.10
`2.20
`2.30
`2.40
`2.50
`2.60
`
`6
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 11 of 68
`
`

`

`
`
`TPS5210
`PROGRAMMABLE SYNCHRONOUS BUCK REGULATOR CONTROLLER
`
`
`SLVS171 – SEPTEMBER 1998
`
`Table 1. Voltage Identification Codes (Continued)
`
`VID TERMINALS
`(0 = GND, 1 = floating or pull-up to 5 V)
`VID3
`VID2
`VID1
`1
`0
`0
`0
`1
`1
`0
`1
`1
`0
`1
`0
`0
`1
`0
`0
`0
`1
`0
`0
`1
`0
`0
`0
`0
`0
`0
`
`VID4
`1
`1
`1
`1
`1
`1
`1
`1
`1
`
`VID0
`0
`1
`0
`1
`0
`1
`0
`1
`0
`
`VREF
`
`(Vdc)
`2.70
`2.80
`2.90
`3.00
`3.10
`3.20
`3.30
`3.40
`3.50
`
`absolute maximum ratings over operating virtual junction temperature (unless otherwise noted)†
`
`Supply voltage range, VCC (see Note1)
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`–0.3 V to 14 V
`Input voltage range: BOOT to DRVGND (High-side Driver ON)
`. . . . . . . . . . . . . . . . . . . . . . . . .
`–0.3 V to 30 V
`BOOT to HIGHDRV
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`–0.3 V to 15 V
`BOOT to BOOTLO
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`–0.3 V to 15 V
`INHIBIT, VIDx, LODRV
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`–0.3 V to 7.3 V
`PWRGD, OCP, DROOP
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`–0.3 V to 7 V
`LOHIB, LOSENSE, IOUTLO, HISENSE
`–0.3 V to 14 V
`. . . . . . . . . . . . . . . . . . . . . . . . . .
`VSENSE
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`–0.3 V to 5 V
`±0.5 V
`Voltage difference between ANAGND and DRVGND
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`Output current, VREFB
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`0.5 mA
`Short circuit duration, DRV
`Continuous
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`Continuous total power dissipation
`See Dissipation Rating Table
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`0°C to 125°C
`Operating virtual junction temperature range, TJ
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`–65°C to 150°C
`Storage temperature range, Tstg
`. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
`260°C
`Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds
`. . . . . . . . . . . . . . . . . . . . . . .
`† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
`functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
`implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
`NOTE 1: Unless otherwise specified, all voltages are with respect to ANAGND.
`
`PACKAGE
`
`TA ≤ 25°C
`POWER RATING
`
`DW
`PWP
`
`1200 mW
`1150 mW
`
`DISSIPATION RATING TABLE
`DERATING FACTOR
`ABOVE TA = 25°C
`12 mW/°C
`11.5 mW/°C
`
`TA = 70°C
`POWER RATING
`
`TA = 85°C
`POWER RATING
`
`660 mW
`630 mW
`
`480 mW
`460 mW
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`7
`
`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 12 of 68
`
`

`

`TPS5210
`PROGRAMMABLE SYNCHRONOUS BUCK REGULATOR CONTROLLER
`
`
`SLVS171 – SEPTEMBER 1998
`
`
`
`recommended operating conditions
`
`Supply voltage, VCC
`Input voltage, BOOT to DRVGND
`Input voltage, BOOT to BOOTLO
`Input voltage, INHIBIT, VIDx, LODRV, PWRGD, OCP, DROOP
`Input voltage, LOHIB, LOSENSE, IOUTLO, HISENSE
`Input voltage, VSENSE
`Voltage difference between ANAGND and DRVGND
`Output current, VREFB†
`† Not recommended to load VREFB other than to set hystersis since IVREFB sets slowstart time.
`
`MIN MAX
`11.4
`13
`0
`28
`0
`13
`0
`6
`0
`13
`0
`4.5
`±0.2
`0
`0
`0.4
`
`UNIT
`V
`V
`V
`V
`V
`V
`V
`mA
`
`electrical characteristics over recommended operating virtual junction temperature range,
`VCC = 12 V, IDRV = 0 A (unless otherwise noted)
`reference/voltage identification
`
`PARAMETER
`
`TEST CONDITIONS
`VCC = 11.4 to 12.6 V, 1.3 V ≤ VREF ≤ 2.5 V
`VCC = 11.4 to 12.6 V, VREF = 2.6 V
`VCC = 11.4 to 12.6 V, VREF = 2.7 V
`VCC = 11.4 to 12.6 V, VREF = 2.8 V
`Reference voltage accuracy, (Includes VCC = 11.4 to 12.6 V, VREF = 2.9 VReference voltage accuracy, (Includes
`
`VCC = 11.4 to 12.6 V, VREF = 3 V
`offset of droop compensation net-
`work)
`VCC = 11.4 to 12.6 V, VREF = 3.1 V
`VCC = 11.4 to 12.6 V, VREF = 3.2 V
`VCC = 11.4 to 12.6 V, VREF = 3.3 V
`VCC = 11.4 to 12.6 V, VREF = 3.4 V
`VCC = 11.4 to 12.6 V, VREF = 3.5 V
`VREF = 1.3 V, Hysteresis window = 30 mV
`VREF =1.3 V, Hysteresis,
`TJ = 60°C window = 30 mV (see Note 3)
`VREF = 1.9 Vv, Hysteresis,
`TJ = 60°C window = 30 mV (see Note 3)
`VREF = 3.5 V, Hysteresis,
`TJ = 60°C window = 30 mV (see Note 3)
`
`Cumulative reference accuracyCumulative reference accuracy
`
`(see Note 2)
`
`TYP
`
`MIN
`–0.01
`–0.0104
`–0.0108
`–0.0112
`–0.0116
`–0.0120
`–0.0124
`–0.0128
`–0.0132
`–0.0136
`–0.0140
`–0.011
`
`–0.008
`
`–0.0090
`
`–0.0115
`
`2.25
`
`MAX
`0.01
`0.0104
`0.0108
`0.0112
`0.0116
`0.0120
`0.0124
`0.0128
`0.0132
`0.0136
`0.0140
`0.011
`
`0.008
`
`0.0090
`
`0.0115
`
`1
`VREF–2% VREF VREF+2%
`2
`
`UNIT
`V/V
`V/V
`V/V
`V/V
`V/V
`V/V
`V/V
`V/V
`V/V
`V/V
`V/V
`
`V/V
`
`V
`V
`V
`
`VREF
`VREF
`
`VIDx
`VIDx
`
`
`
`VVREFB
`
`
`
`VIDxVIDx
`
`High-level input voltage
`Low-level input voltage
`Output voltage
`
`Output regulation
`
`IVREFB = 50 m A
`10 m A ≤ IO ≤ 500 m A
`VIDx = 0 V
`
`mV
`kW
`95
`73
`36
`Input resistance
`V
`5
`4.9
`4.8
`Input pull-up voltage divider
`NOTES: 2. Cumulative reference accuracy is the combined accuracy of the reference voltage and the input offset voltage of the hysteretic
`comparator. Cumulative accuracy equals the average of the high-level and low-level thresholds of the hysteretic comparator.
`3. This parameter is ensured by design and is not production tested.
`
`8
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 13 of 68
`
`

`

`
`
`TPS5210
`PROGRAMMABLE SYNCHRONOUS BUCK REGULATOR CONTROLLER
`
`
`SLVS171 – SEPTEMBER 1998
`
`electrical characteristics over recommended operating virtual junction temperature range,
`VCC = 12 V, IDRV = 0 A (unless otherwise noted) (continued)
`power good
`
`TEST CONDITIONS
`
`MIN
`90
`
`IO = 5 mA
`VPWRGD = 6 V
`
`UNIT
`TYP MAX
`93
`95 %VREF
`0.5
`0.75
`V
`m A
`1
`10
`mV
`
`PARAMETER
`Undervoltage trip threshold
`Low-level output voltage
`High-level input current
`Hysteresis voltage
`
`VOL
`IOH
`Vhys
`
`slowstart
`
`PARAMETER
`
`Charge current
`
`MIN
`
`TYP MAX
`
`UNIT
`
`10.4
`
`–7.5
`
`MIN
`–2.5
`
`–3.5
`
`13
`
`3
`
`10
`
`15.6
`
`10
`100
`7.5
`
`m A
`
`mA
`mV
`nA
`mV
`
`TYP MAX
`2.5
`500
`3.5
`
`60
`
`UNIT
`mV
`nA
`mV
`
`mV
`
`TEST CONDITIONS
`VSLOWST = 0.5 V,
`VVREFB = 1.3 V,
`IVREFB = 65 m A
`VSLOWST = 1 V
`
`Discharge current
`Comparator input offset voltage
`Comparator input bias current
`Comparator hysteresis
`NOTE 3: This parameter is ensured by design and is not production tested.
`
`See Note 3
`
`hysteretic comparator
`PARAMETER
`Input offset voltage
`Input bias current
`Hysteresis accuracy
`
`TEST CONDITIONS
`VDROOP = 0 V (see Note 3)
`See Note 3
`VREFB – VHYST = 15 mV
`(Hysteresis window = 30 mV)
`VREFB – VHYST = 30 mV
`Maximum hysteresis setting
`NOTE 3: This parameter is ensured by design and is not production tested.
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`9
`
`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 14 of 68
`
`

`

`TPS5210
`PROGRAMMABLE SYNCHRONOUS BUCK REGULATOR CONTROLLER
`
`
`SLVS171 – SEPTEMBER 1998
`
`
`
`electrical characteristics over recommended operating virtual junction temperature range,
`VCC = 12 V, IDRV = 0 A (unless otherwise noted) (continued)
`high-side VDS sensing
`PARAMETER
`
`TEST CONDITIONS
`
`MIN
`
`TYP MAX
`2
`
`UNIT
`V/V
`
`Gain
`
`Initial accuracy
`
`IOUTLO
`
`Sink current
`
`IOUT
`
`Source current
`
`IOUT
`
`Sink current
`
`Output voltage swing
`
`VHISENSE = 12 V,
`
`VLOSENSE = 11.9 V,
`VHISENSE = 12 V,
`Differential input to Vds sensing amp = 100 mV
`5 V ≤ VIOUTLO ≤ 13 V
`VIOUT = 0.5 V,
`VIOUTLO = 11.5 V
`VIOUT = 0.05 V, VHISENSE = 12 V,
`VIOUTLO = 12 V
`VHISENSE = 11 V, RIOUT = 10 kW
`VHISENSE = 4.5 V, RIOUT = 10 kW
`VHISENSE = 3 V, RIOUT = 10 kW
`
`LOSENSE
`LOSENSE
`
`High-level input voltage
`Low-level input voltage
`
`194
`
`500
`
`50
`
`0
`0
`0
`2.85
`
`50
`
`60
`
`mV
`
`nA
`
`m A
`
`m A
`
`V
`V
`V
`V
`V
`
`206
`
`250
`
`2
`1.5
`0.75
`
`2.4
`
`80
`
`62
`
`85
`
`123
`
`67
`
`69
`
`MIN
`1.9
`0.08
`1.85
`
`MIN
`112
`
`95
`
`144
`
`75
`
`dB
`
`TYP MAX
`2.1
`2.35
`0.1
`0.12
`
`UNIT
`V
`V
`V
`
`UNIT
`TYP MAX
`115
`120 %VREF
`10
`mV
`
`MIN
`90
`
`TYP MAX
`100
`110
`100
`
`UNIT
`mV
`nA
`
`VHISENSE = 4 5 V (see Note 3)
`VHISENSE = 4.5 V (see Note 3)
`11.4 V ≤ VHISENSE ≤ 12.6 V,
`LOSENSE connected to HISENSE,
`VHISENSE – VIOUTLO = 0.15 V
`4.5 V ≤ VHISENSE ≤ 5.5 V,
`LOSENSE connected to HISENSE,
`VHISENSE – VIOUTLO = 0.15 V
`3 V ≤ VHISENSE ≤ 3.6 V,
`LOSENSE connected to HISENSE,
`VHISENSE – VIOUTLO = 0.15 V
`VHISENSE = 12.6 V to 3 V,
`VHISENSE – VOUTLO = 100 mV
`NOTE 3. This parameter is ensured by design and is not production tested.
`
`Sample/hold resistance
`
`CMRR
`
`PARAMETER
`
`TEST CONDITIONS
`
`inhibit
`
`Start threshold
`Hysteresis
`Stop threshold
`
`overvoltage protection
`
`PARAMETER
`Overvoltage trip threshold
`Hysteresis
`NOTE 3: This parameter is ensured by design and is not production tested.
`
`TEST CONDITIONS
`
`See Note 3
`
`overcurrent protection
`
`OCP trip threshold
`Input bias current
`
`PARAMETER
`
`TEST CONDITIONS
`
`10
`
`POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
`
`MICROCHIP TECHNOLOGY INC. EXHIBIT 1047
`Page 15 of 68
`
`W
`

`

`
`
`TPS5210
`PROGRAMMABLE SYNCHRONOUS BUCK