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`Samsung Electronics Co., Ltd. v. Demaray LLC
`Samsung Electronic's Exhibit 1030
`Exhibit 1030, Page 1
`
`
`
`
`US. Patent
`
`
`
`
`
`Jan. 14, 2003
`
`
`
`
`
`Sheet 1 0f 7
`
`
`
`US 6,506,686 B2
`
`
`FIG. 1
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`
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`
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`11 '-||
`
`114 115111112110101:/J
`
`
`
`..!..
`§
`‘Illlln.
`:1
`
`
`
`
`
`
`
`
`
`4
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`1
`5
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`145 - - 142143
`
`
`
`104
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`106
`
`
`
`144
`
`
`141
`
`Ex. 1030, Page 2
`
`Ex. 1030, Page 2
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`
`US. Patent
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`
`
`
`
`Jan. 14, 2003
`
`
`
`
`Sheet 2 0f 7
`
`
`
`US 6,506,686 B2
`
`
`FIG. 2
`
`
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`121
`
`
`
`
`
`"aa-
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`
`
`- -
`
`122
`
`
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`125
`
`
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`112
`
`117
`
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`T1188
`II
`118A l
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`
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`7...
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`..........................
`w’121B
`
`
`114
`
`
`
`116
`
`
`
`
`Ex.1030,Page3
`
`Ex. 1030, Page 3
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`US. Patent
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`
`
`Jan. 14, 2003
`
`
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`
`Sheet 3 0f 7
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`
`
`US 6,506,686 B2
`
`
`
`
`Si ETCHING RATE ( um/h)
`
`
`
`
`FIG. 3
`
`
`
`0 50-75 °C
`
`
`A 100-105 °C
`
`
`
`a 125-130 °C
`
`O
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`
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`-100
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`
`-200
`
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`-300
`
`
`
`-400
`
`
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`-500
`
`
`
`-600
`
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`
`
`Vdc (V)
`
`
`FIG. 4
`
`
`TEMPERATURE (deg)
`
`
`
`200
`
`
`
`
`
`
`pLATE 115
`
`
`
`
`ANTENNA BIAS
`
`
`
`'fi'—_—
`150
`
`wfllmlm-n
`
`
`all msc CONDUCTOR 111
`
`O
`
`0
`
`
`
`
`1O
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`20
`
`
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`30
`
`
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`4O 50
`
`TIME (min)
`
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`60
`
`
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`7O
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`
`
`80
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`
`
`Ex. 1030, Page 4
`
`1mluumuflal I Inn:
`
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`Ex. 1030, Page 4
`
`
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`
`US. Patent
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`
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`
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`Jan. 14, 2003
`
`
`
`
`Sheet 4 0f 7
`
`
`
`
`US 6,506,686 B2
`
`
`TEMPERATURE (deg)
`
`
`,
`
`.
`
`200
`
`
`
`,
`
`,
`
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`
`
`
`.
`,
`DISCHARGE ON
`
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`‘ DiSCHARGE OFF 2
`
`5GASINTRODUCTION
`‘
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`ON OFF ON OFF ON OFF ON OFF.
`
`
`
`15°
`
`
`
`
`100
`
`50
`
`
`
`0
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`
`1o
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`
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`12
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`14
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`16
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`18 20 22 24
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`26 28 30
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`TIME (min)
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`TEMPERATURE (deg)
`
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`IIIIIIII
`
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`O
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`20
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`30
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`40
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`TIME (min)
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`7O
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`
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`8O
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`
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`Ex. 1030, Page 5
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`150
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`100
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`50
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`1
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`Ex. 1030, Page 5
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`US. Patent
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`Jan. 14, 2003
`
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`Sheet 5 0f 7
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`
`
`US 6,506,686 B2
`
`
`FIG. 7
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`120
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`
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`
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`121 — 122
`0 Q. 124
`123
`
`
`
`- -' 125
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`114
`
`
`
`
`
`T1188
`- 117
`118A l
`
`
`
`
`1.0__
`I
`I
`3—0 7
`113
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`I — - I /~/
`\\“ L\\\\‘\‘V‘I%\\V y.“ “\V
`6m Leafy»? a 1%
`
`
`
`115
`
`112
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`
`
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`
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`I'—'L‘.‘\‘h“INIK‘IL‘IL‘VINFIQ'IWIFKQQ‘Tu—D
`I
`mr
`III/A
`121B
`
`
`
`115A
`
`Ex. 1030, Page 6
`
`Ex. 1030, Page 6
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`US. Patent
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`Jan. 14, 2003
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`Sheet 6 0f 7
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`
`
`US 6,506,686 B2
`
`
`FIG. 8
`
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`TEMPERATURE (deg)
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`
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`200
`
`
`150
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`
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`0
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`1O
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`20
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`3O 40
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`50
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`
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`TIME (min)
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`60
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`
`
`70
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`
`
`80
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`FIG. 10
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`ETCHING DEPTH (nm)
`
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`
`ETCH RATE (nm/min)
`
`
`
`1600
`
`1400
`
`1200
`
`1000
`
`800
`
`600
`
`400
`
`200
`
`
`
`800
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`
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`600
`
`400
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`
`
`
`TIME (min)
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`
`
`Ex. 1030, Page 7
`
`Ex. 1030, Page 7
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`US. Patent
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`Jan. 14, 2003
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`Sheet 7 0f 7
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`
`US 6,506,686 B2
`
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`FIG. 9
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`OES INTENSITY (a.u.)
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` O
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`1
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`2
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`3
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`4
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`TIME (min)
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`<"BIAS—Vpp
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`I
`I
`I
`""""""I""""""‘I""""""I'""""""
`I
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`Ex. 1030, Page 8
`
`Ex. 1030, Page 8
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`
`
`
`
`US 6,506,686 B2
`
`
`1
`PLASMA PROCESSING APPARATUS AND
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`
`PLASMA PROCESSING METHOD
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`BACKGROUND OF THE INVENTION
`
`
`1. Field of the Invention
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`The present
`invention relates to a plasma processing
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`apparatus and processing method, particularly to a plasma
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`processing apparatus and processing method suitable for
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`formation of ultrafine pattern in semiconductor production
`process.
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`2. Related Background Art
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`In semiconductor production process, a plasma process-
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`ing apparatus is widely used in fine processing such as
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`etching, film formation and ashing. In plasma processing,
`
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`process gas introduced into a vacuum chamber (reactor) is
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`converted to plasma by a plasma generation means, and is
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`made to react on the semiconductor wafer surface to provide
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`fine processing, and volatile reaction products are exhausted,
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`thus a predetermined process is performed.
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`This plasma processing is strongly affected by tempera-
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`ture of the reactor inner wall and wafer and deposition of
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`reaction products on the inner wall. Furthermore,
`if the
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`reaction products deposited inside the reactor have peeled
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`off, partilcle may be produced, resulting in deterioration of
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`device characteristics or reduction of yields. In the plasma
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`processing apparatus, therefore, it is important to control
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`temperature inside the reactor and deposition of reaction
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`products on the surface, in order to ensure process stability
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`and to prevent particle contamination.
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`For example, Official Gazette of Japanese Patent Laid-
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`
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`Open NO. 144072/1996 discloses a dry etching apparatus
`
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`which controls and maintains the temperature of each part
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`inside the reactor to a high temperature of 150 to 300° C.
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`(preferably 200 to 250° C.), at least 150° C. higher than that
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`of etching stage, within the accuracy of 15° C., wherein the
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`purpose is to improve the selectivity in a silicon oxide dry
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`etching process. This is intended to reduce deposition of
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`plasma polymer on the inner wall of the reactor by control-
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`ling each part inside the reactor to high temperature, thereby
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`increase the deposition of plasma polymer on the semicon-
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`ductor wafer, with the result of improved selectivity.
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`Also, Official Gazette of Japanese Patent Laid-Open NO.
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`275385/1993 discloses a parallel plate plasma processing
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`apparatus wherein a heating means is provided on at least
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`one of a clamp ring (object holding means) or focus ring
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`(plasma concentration means) to raise and keep the tem-
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`perature in order to prevent deposition of plasma process
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`reaction products. As a heating means, a resistance heater is
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`used. Since deposition of reaction products can be prevented
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`by heating, peeling off of reaction products and particles on
`the object surface are reduced.
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`However, when the reactor inner wall is set to a high
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`temperature of 200 to 250° C. or more as described above,
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`a problem arises that etching characteristics becomes very
`sensitive to the temperature of the inner wall surface, and
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`repeatability and reliability of the process can be reduced.
`For example, S. C. McNevin, et al., J. Vac. Sci. Technol.
`
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`B15(2) March/April 1997, R21, “Chemical challenge of
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`submicron oxide etching” indicates that oxide film etching
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`rate increases 5% or more, in the inductively coupled plasma
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`when side wall temperature changes from 200 to 170° C.,
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`therefore, surface temperature inside the reactor is required
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`to be kept to a high accuracy of 250 12° C. in order to ensure
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`stability of process characteristics.
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`10
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`15
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`20
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`25
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`30
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`35
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`Furthermore, since the surface of the processing chamber
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`inner wall is exposed to high density plasma, it is not easy
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`to control the wall surface temperature with high accuracy in
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`the high temperature range. A highly accurate in-situ tem-
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`perature measuring means and a heating means such as
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`resistance heater or lamp are to be used for temperature
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`control. However, the temperature control mechanism and
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`means will be quite complicated and large in scale, resulting
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`in complicated equipment with high cost. In a high tem-
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`perature range of more than 200° C., another problem exists
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`that the materials applicable for the inner wall are limited.
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`In this respect,
`the present applicants discloses in the
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`Japanese Patent Application No. 147672/1998 (Official
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`Gazette of Japanese Patent Laid-Open NO. 340149/1999) by
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`the same applicants that the process can be insensitive to
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`temperature changes and stable process repeatability can be
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`ensured despite the temperature accuracy of about 110° C.,
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`when the temperature of the processing chamber inner wall
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`is set
`to the temperature range of lower than 100° C.,
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`wherein said applicants use a magnetic field UHF band
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`electromagnetic wave radiation discharge type plasma etch-
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`ing apparatus as one Embodiment.
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`The same application discloses that, by applying bias at
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`least partly to the components (or inner wall surface) in
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`contact with plasma, and by reducing the thermal capacity of
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`the components to keep component temperature in the range
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`from 150 to 250° C., it is possible to come to the level that
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`the temperature fluctuation of components does not affect
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`the process substantially.
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`The present applicants in the Japanese Patent Application
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`No. 232132/1999 by the same applicants also disclose that,
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`when higher bias power of no deposition occurrence is
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`applied to the silicon-made focus ring set outside the sample,
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`and when the surface temperature is higher than 150° C.,
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`surface reaction dependency upon temperature on the silicon
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`surface is reduced and stable process repeatability can be
`ensured.
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`However, as for the plate installed on the top antenna (or
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`upper electrode or top plate) opposite to the sample wafer,
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`although the plate has a big influence on process stability,
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`said application only states that the plate has a role of
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`stabilizing the process by preventing reaction product from
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`deposition by application of bias, and said applicants did not
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`reach sufficient understanding of the mechanism nor succeed
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`in quantifying the required conditions.
`SUMMARY OF THE INVENTION
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`From said technological standpoint, the present inventors
`made a strenuous effort to solve said problems, and found
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`temperature range and accuracy required to ensure
`out
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`process stability and requirements for surface state control
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`by bias application, regarding the top plate installed opposite
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`to the sample wafer.
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`The present invention was developed on the basis of the
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`aforementioned findings, and is intended to provide a
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`plasma processing apparatus and processing method with
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`excellent process stability and repeatability.
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`The present invention provides a plasma processing appa-
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`ratus comprising; a vacuum chamber, a process gas supply
`means to supply gas to said vacuum chamber, an electrode
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`to hold a sample inside said vacuum chamber, a plasma
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`generator installed in said vacuum chamber opposite to said
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`sample, and a vacuum exhaust system to evacuate said
`vacuum chamber;
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`wherein said plasma generator is installed a silicon-made
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`plate inside the processing chamber, and bias voltage of
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`Ex. 1030, Page 9
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`Ex. 1030, Page 9
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`3
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`Vdc=—50 to —300 V (i.e. —300 VéVdcé—SO V) is
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`applied to said silicon-made plate, and the surface
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`temperature of said plate is kept in the range from 100
`to 200° C.
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`Another characteristic of the present invention is that the
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`fluctuation of the surface temperature of the silicon-made
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`plate on said plasma processing apparatus is kept within
`125° C.
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`Still further characteristic of the present invention is that
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`said plasma generator of plasma processing apparatus is
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`based on magnetic field or non-magnetic field UHF band
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`electromagnetic wave radiation discharge method in the
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`frequency range from 300 MHZ to 1 GHz, and that the
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`resistivity of said silicon-made plate is 1 to 10 Qcm, and that
`the thickness of said silicon-made plate is 5 to 20 mm,
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`desirably up to 10 mm.
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`According to the present invention, dependency of reac-
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`tion on temperature on the silicon surface decreases by
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`temperature control and bias application for silicon-made
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`plate installed opposite to the sample and plasma state and
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`process characteristics are stabilized for surface temperature
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`fluctuation of the plate within 125° C.,
`thus a plasma
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`processing apparatus and processing method with excellent
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`stability and repeatability can be provided.
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`The present
`invention is still further characterized as
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`follows: the skin depth of the UHF band electromagnetic
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`wave transmitting inside the silicon-made plate and silicon
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`plate thickness are almost equal, and current resulting from
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`UHF band electromagnetic wave flows the entire plate. As
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`a result, the plate is effectively heated by self-heat genera-
`tion due to the internal resistance of silicon itself, which
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`enables to set surface temperature of the silicon-made plate
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`in the range from 100 to 200° C. where dependency of
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`surface reaction on temperature decreases. As a result
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`plasma state and process characteristics are stabilized, thus
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`a plasma processing apparatus and processing method with
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`excellent stability and repeatability can be provided.
`BRIEF DESCRIPTION OF THE DRAWINGS
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`FIG. 1 is a schematic diagram representing the vertical
`section of the first Embodiment where the present invention
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`is applied to a magnetic field UHF band electromagnetic
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`wave radiation discharge type plasma processing apparatus;
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`FIG. 2 is a schematic diagram representing the vertical
`section of the embodiment of an antenna structure according
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`to the first Embodiment;
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`FIG. 3 shows the result of evaluating consumption rate of
`the plate in the first Embodiment;
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`FIG. 4 represents the temperature fluctuation of the plate
`in the first Embodiment;
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`FIG. 5 represents the temperature fluctuation of the plate
`in the steady state in the first Embodiment;
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`FIG. 6 represents the temperature fluctuation where the
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`plate has different resistivity in the first Embodiment;
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`FIG. 7 is a schematic diagram representing the vertical
`section of the second Embodiment where the present inven-
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`tion is applied to a magnetic field UHF band electromagnetic
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`wave radiation discharge type plasma processing apparatus;
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`FIG. 8 represents the temperature fluctuation of the plate
`in the second Embodiment;
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`FIG. 9 represents the changes of plasma optical emission,
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`discharge voltage and antenna bias voltage with time in the
`second Embodiment; and
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`FIG. 10 represents the result of measuring the dependency
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`of etching depth and etching rate upon etching time in the
`second Embodiment.
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`10
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`15
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`20
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`25
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`30
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`35
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`40
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`45
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`50
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`55
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`60
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`65
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`US 6,506,686 B2
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`
`4
`DETAILED DESCRIPTION OF PREFERRED
`
`
`EMBODIMENTS
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`The following describes the embodiments according to
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`the present invention with reference to the drawings.
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`FIG. 1 shows an embodiment where the present invention
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`is applied to the magnetic field UHF band electromagnetic
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`wave radiation discharge type plasma etching apparatus. It is
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`a cross sectional view of said plasma etching apparatus in
`schematic form.
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`The processing chamber 100 in FIG. 1 is a vacuum vessel
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`providing a vacuum of about 10'6 Torr. An antenna 110,
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`which radiates electromagnetic wave, is installed on the top
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`thereof, and a bottom electrode 130 to mount a sample W
`such as a wafer is installed on the bottom thereof. Antenna
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`110 and bottom electrode 130 are installed so as to be
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`opposite to and in parallel with each other. A magnetic field
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`forming means 101 composed of an electromagnetic coil
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`and a yoke, for example, is installed around the processing
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`chamber 100. Process gas introduced into the processing
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`chamber is converted into plasma by interaction between the
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`electromagnetic wave radiated from the antenna 110 and
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`magnetic field produced by the magnetic field forming
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`means 101, and plasma P is generated to perform processing
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`of the sample W on the bottom electrode 130.
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`Evacuation of the processing chamber 100 is provided by
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`vacuum exhaust apparatus 106 connected to vacuum cham-
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`ber 105 and the inner pressure can be controlled by a
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`pressure control means 107. The processing pressure is
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`adjusted in the range from 0.1 to 10 Pa, more desirably from
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`0.5 to 4 Pa. The processing chamber 100 and the vacuum
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`chamber 105 are at the ground potential. A side wall inner
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`unit 103 having a temperature control function is replace-
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`ably installed on a side wall 102 of the processing chamber
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`100. The temperature on the inner surface is controlled by a
`heat transfer medium supplied in circulation to the side wall
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`inner unit 103 from the heat transfer medium supply means
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`104. Alternatively,
`the temperature can be feedback-
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`controlled by a heater mechanism and a temperature detect-
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`ing means. The temperature control range is from 0 to 100°
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`C., desirably 20 to 80° C., and is controlled within 110° C.
`is desirable that
`the side wall 102 of the processing
`It
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`chamber 100 and side wall inner unit 103 are made of
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`non-magnetic metallic material without containing heavy
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`metal, featuring high thermal conductivity, for example
`aluminum, and that the surface is provided with surface
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`process of anti-plasma, for example anodized aluminum
`oxide or the like.
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`Antenna 110 installed on the vacuum vessel consists of a
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`disk formed conductor 111, a dielectric 112 and a dielectric
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`ring 113, and is held by a housing 114 as a part of the
`vacuum vessel. Furthermore, a plate 115 is installed on the
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`surface of the disk formed conductor 111 on the side in
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`contact with plasma. A outer ring 116 is installed further on
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`the outside. The temperature of the disk formed conductor
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`111 is kept at a predetermined value by a temperature control
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`means (not illustrated), namely by heat transfer medium
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`circulating inside, and the surface temperature of the plate
`115 in contact with the disk formed conductor 111 is
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`controlled. The process gas used to perform sample etching
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`and film formation is supplied at a predetermined flow rate
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`and mixing ratio from the gas supply means 117 and is
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`introduced into processing chamber through numerous holes
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`provided on the disk formed conductor 111 and the plate
`115, controlled to a designed distribution.
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`The antenna 110 is connected to an antenna power source
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`121 and antenna bias power source 122 as an antenna power
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`Ex. 1030, Page 10
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`Ex. 1030, Page 10
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`US 6,506,686 B2
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`5
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`system 120 through matching circuit-filter systems 122 and
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`124, and is also connected to the ground through a filter 125.
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`The antenna power source 121 supplies power at a UHF
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`band frequency in the range from 300 MHZ to 1 GHZ. By
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`setting diameter of the disk formed conductor 111 to a
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`specified characteristic length,
`inherent excitation mode,
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`such as TM01 mode, is formed. In the present Embodiment,
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`frequency of the antenna power source 121 is 450 MHZ, and
`the diameter of the disk formed conductor 111 is 330 mm.
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`Meanwhile, the antenna bias power source 122 controls
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`the reaction on the surface of the plate 115 by applying bias
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`power at a frequency in the range from several tens of kHz
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`to several tens of MHZ to the antenna 110. Particularly in
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`case of oxide film etching using CF-series gas, use of high
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`purity silicon as a material of the plate 115 enables the
`reaction of F radical and CFx radical to be controlled, thus
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`radical composition ratio can be adjusted.
`In this
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`Embodiment, antenna bias power source 122 is set at a
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`frequency of 13.56 MHZ and a power of 50 W to 600 W. In
`20
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`this case, bias voltage Vdc is generated to the plate 115 due
`to self-bias. The Vdc value is about Vdc=—300 V to —50 V
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`(i.e. —300 VéVdcé—SO V), although it may vary with
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`plasma density and pressure. The present Embodiment is
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`characterized in the point that the self-bias applied to the
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`plate 115 is controlled independent of the plasma generation,
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`unlike so-called parallel plate capacitively coupled plasma
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`system. Especially, by setting the bias voltage to a low value
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`of Vdc=—100 V or less (for example —10 V) (i.e. —100
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`VéVdcé—10 V),
`it becomes possible to reduce silicon
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`consumption,
`resulting in running cost
`reduction, and
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`becomes also possible to reduce silicon sputtering, which
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`results in less etching residue on the sample W.
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`The distance between the bottom of the plate 115 and the
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`sample W (hereafter called “gap”) is in the range of 30 to
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`150 mm, or desirably 50 to 120 mm. Since the plate 115
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`having wide area is placed opposite to the sample W, it has
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`the biggest influence to the process. The major point of the
`present invention is to stabilize surface reaction on the plate
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`115, and to get process characteristics with excellent repeat-
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`ability by bias application to the surface of the plate 115 and
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`by temperature control within a specific range. This will be
`described later in details.
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`On the bottom of the processing chamber 100, a bottom
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`electrode 130 is installed opposite to the antenna 110. To the
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`bottom electrode 130, a bias power source 141 is connected
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`through matching circuit filter system 142. The bias power
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`source 141 supplies bias power in the range from 400 kHz
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`to 13.56 MHZ, for example, and controls the bias applied to
`the sample W. The bottom electrode 130 is connected to the
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`ground through filter 143.
`In the present Embodiment,
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`frequency of the bias power source 141 is set to 800 kHz.
`On the top surface of the bottom electrode 130, namely,
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`on the sample mounting surface, a sample W such as a wafer
`is mounted on an electrostatic chucking unit 131. Electro-
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`static chucking dielectric layer (hereafter called “electro-
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`static chucking film”) is formed on the surface of the
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`electrostatic chucking unit 131. By applying hundreds of
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`volts to several kilovolts (kV) of DC voltage from an
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`electrostatic chucking DC power supply 144 through filter
`145, sample W is chucked and held on the bottom electrode
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`130 by electrostatic chucking force. As for the electrostatic
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`chucking film, dielectric of aluminum oxide or aluminum
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`oxide mixed with titanium oxide is used. Surface tempera-
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`ture of the electrostatic chucking unit 131 is controlled by
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`temperature control means (not illustrated). Inactive gas, for
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`example helium gas, set to a specified flow rate and pressure,
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`is supplied to the surface of the electrostatic chucking unit
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`131, and raise heat conductivity with the sample W. This
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`allows surface temperature of the sample W to be controlled
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`with high precision in the range from about 100 to 110° C.,
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`for example. On the top surface of the electrostatic chucking
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`unit 131, a focus ring 132, a ring formed member made of
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`high purity silicon, is installed outside the sample W. The
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`focus ring 132 is isolated from electrostatic chucking unit
`131 by an insulator 133. An electrode outer cover 134 is
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`settled outside the electrode. Alumina and quartz are suitable
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`for the insulator 133 and the electrode outer cover 134. In
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`this Embodiment, alumina is used for the insulator 133 and
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`electrode outer cover 134. This configuration enables bias
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`power applied to the bottom electrode to be applied to the
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`focus ring 132 by partial leakage through the insulator 133.
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`Intensity of the bias applied to the focus ring 132 can be
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`adjusted according to dielectric constant and thickness of the
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`insulator 133. The focus ring 132 is thermally isolated from
`the insulator 133, and is not in thermal contact. This enables
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`highly efficient temperature rise through heating by plasma
`and bias. Furthermore, use of silicon as material of the focus
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`ring 132 allows scavenging function of the silicon on the
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`surface of focus ring 132 to adjust the reaction of F radical
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`and CFx radical or radical composition. This makes it
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`possible to adjust etching uniformity, especially on the outer
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`periphery of the wafer.
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`The plasma etching apparatus according to the present
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`Embodiment is structured as described above. Regarding the
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`temperature control of the side wall
`in the above
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`Embodiments, the results disclosed in the Japanese Patent
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`Application No. 14767/1998 by the applicants of the present
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`invention can be used. Likewise, regarding the focus ring
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`structure, what is disclosed in the Japanese Patent Applica-
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`tion No. 232132/1999 by the applicants of the present
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`invention can be employed.
`the following describes a
`With reference to FIG. 1,
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`process of etching silicon oxide film as an example, using
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`this plasma etching apparatus:
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`Firstly, the wafer W as an object of processing is loaded
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`into the processing chamber 100 from a sample loading
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`mechanism (not illustrated) and is mounted on the bottom
`electrode 130 and chucked thereon. The height of the lower
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`electrode is adjusted, and the gap is set to a predetermined
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`value. Then gases required for sample W etching process,
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`for example, C4F8, Ar and O2 are supplied into the process-
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`ing chamber 100 from gas supply means 117 through the
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`plate 115 at a predetermined flow rate and mixing ratio. At
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`the same time, the pressure inside the processing chamber
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`100 is adjusted to a predetermined processing pressure by
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`the vacuum exhaust system 106 and the pressure control
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`means 107. Then 450 MHZ UHF power is supplied from the
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`antenna power supply 121, and electromagnetic wave is
`radiated from the antenna 110. Plasma is generated inside
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`the processing chamber 100 by interaction with approxi-
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`mately horizontal magnetic field of 160 gausses (electron
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`cyclotron resonance magnetic field intensity for 450 MHZ)
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`formed inside the processing chamber 100 by the magnetic
`field forming means 101. Process gas is dissociated to
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`generate ion and radical. Composition and energy of ion and
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`radical in plasma are controlled by antenna bias power from
`the antenna bias power source 122 and bias power from the
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`bias power supply 141 of the bottom electrode, and etching
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`process is performed to the wafer W. Then, upon completion
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`of etching, supply of power, magnetic field and process gas
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`are terminated, and etching process is completed.
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`The plasma processing apparatus in the present Embodi-
`is structured as described above. The following
`ment
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`describes a specific method for controlling the temperature
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`Ex. 1030, Page 11
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`Ex. 1030, Page 11
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`7
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