throbber
Samsung Electronics Co., Ltd. v. Demaray LLC
`Samsung Electronic's Exhibit 1053
`Exhibit 1053, Page 1
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`

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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`High power asymmetrical InAsSb/InAsSbP/AIAsSb double
`heterostructure lasers emitting at 3.4 um
`D. Wu, B. Lane, H. Mohseni, J. Diaz and M. Razeghi
`
`Appl. Phys. Lett. 74, 1194 (1999); https://doi.org/10.1063/1.123496
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Optical modulation in a resonant tunneling relaxation oscillator
`J. M. L. Figueiredo, C. R. Stanley, A. R. Boyd, C. N. Ironside, S. G. McMeekin and A. M. P. Leite
`
`Appl. Phys. Lett. 74, 1197 (1999); https://doi.org/10.1063/1.123497
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Ultrashort laser pulse induced deformation ofsilver
`nanoparticles in glass
`M. Kaempfe,T. Rainer, K.-J. Berg, G. Seifert and H. Graener
`
`Appl. Phys. Lett. 74, 1200 (1999); https://doi.org/10.1063/1.123498
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`SHOW ABSTRACT
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`https://aip.scitation.org/toc/apl/74/9?size=all&
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`Ex. 1053, Page 2
`Ex. 1053, Page 2
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
`
`a No Access . March 1999
`Silicon-based resonant-cavity-enchanced photodiode with a
`buried SiO» reflector
`V. S. Sinnis, M. Seto, G. W. ’t Hooft, Y. Watabe, A. P. Morrison, W. Hoekstra and W. B. de Boer
`
`Appl. Phys. Lett. 74, 1203 (1999); https://doi.org/10.1063/1.123499
`
`SHOW ABSTRACT
`
`:
`
`a No Access . March 1999
`A 200nm x 2mmarray of organic light-emitting diodes and their
`anisotropic electroluminescence
`Naotoshi Suganuma, Chihaya Adachi, Toshiki Koyama, Yoshio Taniguchi and Hiroshi Shiraishi
`
`Appl. Phys. Lett. 74, 1206 (1999); https://doi.org/10.1063/1.123500
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Growthand optical characterization of aluminum nitride thin
`films deposited onsilicon by radio-frequency sputtering
`E. Dogheche, D. Rémiens, A. Boudrioua and J. C. Loulergue
`
`Appl. Phys. Lett. 74, 1209 (1999); https://doi.org/10.1063/1.123501
`
`SHOW ABSTRACT
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`a No Access . March 1999
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`https://aip.scitation.org/toc/apl/74/9?size=all&
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`Ex. 1053, Page 3
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
`
`Hideo Kosaka, Takayuki Kawashima, Akihisa Tomita, Masaya Notomi, Toshiaki Tamamura,
`
`Takashi Sato and Shojiro Kawakami
`
`Appl. Phys. Lett. 74, 1212 (1999); https://doi.org/10.1063/1.123502
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Spatial hole burning and multimode generation threshold in
`quantum-dotlasers
`L. V. Asryan and R.A. Suris
`
`Appl. Phys. Lett. 74, 1215 (1999); https://doi.org/10.1063/1.123503
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Electron paramagnetic resonanceof a cation antisite defect in
`ZnGeP»2
`S. D. Setzler, N. C. Giles, L. E. Halliburton, P. G. Schunemann andT. M. Pollak
`
`Appl. Phys. Lett. 74, 1218 (1999); https://doi.org/10.1063/1.123504
`
`SHOW ABSTRACT
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`;
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`STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL
`
`PROPERTIES OF CONDENSED MATTER
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
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`4/19
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`Ex. 1053, Page 4
`Ex. 1053, Page 4
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`9/11/2020
`Applied Physics Letters: Vol 74, No 9
`Structure control and characterization of SrBiy Taz Og thin films
`by a modified annealing method
`G. D. Hu, I. H. Wilson, J. B. Xu, W. Y. Cheung, S. P. Wong and H. K. Wong
`
`Appl. Phys. Lett. 74, 1221 (1999); https://doi.org/10.1063/1.123505
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Shapetransition of InAs quantum dots by growthat high
`
`temperature
`Hideaki Saito, Kenichi Nishi and Shigeo Sugou
`
`Appl. Phys. Lett. 74, 1224 (1999); https://doi.org/10.1063/1.123506
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Optical properties of GaN pyramids
`K. C. Zeng, J. Y. Lin, H. X. Jiang and Wei Yang
`
`Appl. Phys. Lett. 74, 1227 (1999); https://doi.org/10.1063/1.123507
`
`SHOW ABSTRACT
`
`:
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`3
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`3
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`a No Access . March 1999
`The effects of misfit dislocation distribution and capping layer
`
`on excessstress
`
`Zhi Jin, Shuren Yang, Benzhong Wana, Haivan An, Chunsheng Ma and Shivong Liu
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
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`5/19
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`Ex. 1053, Page 5
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
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`Appl. Phys. Lett. 74, 1230 (1999); https: //doi.org/10.1063/1.123508
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Variable energy blast modeling of the stress generation
`associated with laser ablation
`
`S. Siano, R. Pini and R. Salimbeni
`
`Appl. Phys.Lett. 74, 1233 (1999); https://doi.org/10.1063/1.123509
`
`SHOW ABSTRACT
`
`3
`
`3
`
`a No Access . March 1999
`Artificial skin to sense mechanical stress by visible light emission
`Cc. N. Xu, T. Watanabe, M. Akiyama and X. G. Zheng
`
`Appl. Phys. Lett. 74, 1236 (1999); https://doi.org/10.1063/1.123510
`
`SHOW ABSTRACT
`
`3
`
`SEMICONDUCTORS
`
`a No Access . March 1999
`Photoconductivity investigation of the electron dynamicsin
`GaAs grownat low temperature
`Max Stellmacher, Jean-Phillioe Schnell, Didier Adam and Julien Nagle
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
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`6/19
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`Ex. 1053, Page 6
`Ex. 1053, Page 6
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
`
`Appl. Phys. Lett. 74, 1239 (1999); https://doi.org/10.1063/1.123511
`
`SHOW ABSTRACT
`
`:
`
`a No Access . March 1999
`Low-pressure metal organic chemical vapor deposition of GaN
`onsilicon(111) substrates using an AlAs nucleation layer
`A. Strittmatter, A. Krost, M. StraBburg, V. Turck, D. Bimberg, J. Blasing and J. Christen
`
`Appl. Phys. Lett. 74, 1242 (1999); https://doi.org/10.1063/1.123512
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Temperature-dependentHall scattering factor and drift mobility
`in remotely doped Si:B/SiGe/Si heterostructures
`B. M. M. McGregor, R. J. P. Lander, P. J. Phillips, E. H. C. Parker and T. E. Whall
`
`Appl. Phys. Lett. 74, 1245 (1999); https://doi.org/10.1063/1.123513
`
`SHOW ABSTRACT
`
`:
`
`a No Access . March 1999
`Comparisonof ultralow-energy ion implantation of boron and
`BF»for ultrashallow p” /n junction formation
`Jihwan Park, Yun-Jun Huh and Hyunsang Hwang
`
`Appl. Phys. Lett. 74, 1248 (1999); https://doi.org/10.1063/1.123514
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
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`7/19
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`Ex. 1053, Page 7
`Ex. 1053, Page 7
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
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`SHOW ABSTRACT
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`3
`
`a No Access . March 1999
`Spin injection into semiconductors
`M. Oestreich, J. Hubner, D. Hagele, P. J. Klar, W. Heimbrodt, W. W. RUhle, D. E. Ashenford and
`B. Lunn
`
`Appl. Phys. Lett. 74, 1251 (1999); https://doi.org/10.1063/1.123515
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Reexamination of N composition dependence of coherently
`grown GaNaAsband gap energywith high-resolution x-ray
`diffraction mapping measurements
`Katsuhiro Uesugi, Nobuki Morooka and Ikuo Suemune
`
`Appl. Phys. Lett. 74, 1254 (1999); https://doi.org/10.1063/1.123516
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Thermal evolution of impurities in wet chemical silicon oxides
`A. B. Gurevich, M. K. Weldon, Y. J. Chabal, R. L. Opila and J. Sapjeta
`
`Appl. Phys. Lett. 74, 1257 (1999); https://doi.org/10.1063/1.123517
`
`;
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`;
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`SHOW ABSTRACT
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`https://aip.scitation.org/toc/apl/74/9?size=all&
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`8/19
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`Ex. 1053, Page 8
`Ex. 1053, Page 8
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
`
`a No Access . March 1999
`Oxidation of Si beneath thin SiO» layers during exposure to
`HBr/O, plasmas, investigated by vacuumtransfer x-ray
`photoelectron spectroscopy
`Vv. M. Donnelly, F. P. Klemens, T. W. Sorsch, G. L. Timp and F. H. Baumann
`
`Appl. Phys. Lett. 74, 1260 (1999); https://doi.org/10.1063/1.123518
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Evolution of deep-level centers in p-typesilicon following ion
`implantation at 85 K
`Cc. R. Cho, N. Yarykin, R. A. Brown, O. Kononchuk, G. A. Rozgonyi and R. A. Zuhr
`
`Appl. Phys. Lett. 74, 1263 (1999); https://doi.org/10.1063/1.123519
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`High voltage (450 V) GaN Schottkyrectifiers
`Z. Z. Bandic, P. M. Bridger, E. C. Piquette, T. C. McGill, R. P. Vaudo, V. M. Phanse and J. M.
`
`Redwing
`
`Appl. Phys. Lett. 74, 1266 (1999); https://doi.org/10.1063/1.123520
`
`SHOW ABSTRACT
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
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`:
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`9/19
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`Ex. 1053, Page 9
`Ex. 1053, Page 9
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
`
`Femtosecond response times and high optical nonlinearity in
`beryllium-doped low-temperature grown GaAs
`M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, P. Specht and E. R. Weber
`
`Appl. Phys. Lett. 74, 1269 (1999); https://doi.org/10.1063/1.123521
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Modified Stranski-Krastanov growthin stackedlayers of self-
`assembledislands
`
`O. G. Schmidt, O. Kienzle, Y. Hao, K. Eberl and F. Ernst
`
`Appl. Phys.Lett. 74, 1272 (1999); https://doi.org/10.1063/1.123522
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Low-resistance ohmic contacts to p-type GaN
`Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen and
`
`Kwang-Kuo Shih
`
`Appl. Phys. Lett. 74, 1275 (1999); https://doi.org/10.1063/1.123546
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Controlled spontaneous emissions from current-driven
`
`semiconductor microcavity triodes
`
`:
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`;
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`https://aip.scitation.org/toc/apl/74/9?size=all&
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`10/19
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`Ex. 1053, Page 10
`Ex. 1053, Page 10
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`9/11/2020
`
`Applied Physics Letters: Vol 74, No 9
`
`Appl. Phys. Lett. 74, 1278 (1999); https://doi.org/10.1063/1.123523
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Ballistic electron focusing byelliptic reflecting barriers
`J. J. Heremans, S. von Molnar, D. D. Awschalom and A. C. Gossard
`
`Appl. Phys. Lett. 74, 1281 (1999); https://doi.org/10.1063/1.123524
`
`SHOW ABSTRACT
`
`(By No Access . March 1999
`Preparation of amorphous hydrogenatedsilicon-germanium
`material and solar cells using the thermocatalytic chemical
`vapor deposition
`M. Lill and B. Schréder
`
`Appl. Phys. Lett. 74, 1284 (1999); https://doi.org/10.1063/1.123525
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Growthand characterization of small band gap (~0.6 eV)
`InGaAsN layers on InP
`Milind R. Gokhale, Jian Wei, Hongsheng Wang andStephenR.Forrest
`
`Appl. Phys. Lett. 74, 1287 (1999); https://doi.org/10.1063/1.123526
`
`:
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`Ex. 1053, Page 11
`Ex. 1053, Page 11
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
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`SHOW ABSTRACT
`
`a No Access . March 1999
`Arsenic-doped Si(001) gas-source molecular-beam epitaxy:
`Growth kinetics and transport properties
`J. A. N. T. Soares, H. Kim, G. Glass, P. Desjardins and J. E. Greene
`
`Appl. Phys. Lett. 74, 1290 (1999); https://doi.org/10.1063/1.123527
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`A memorycell with single-electron and metal-oxide-
`semiconductortransistor integration
`Zahid A. K. Durrani, Andrew C. Irvine, Haroon Ahmed and Kazuo Nakazato
`
`Appl. Phys. Lett. 74, 1293 (1999); https://doi.org/10.1063/1.123528
`
`SHOW ABSTRACT
`
`:
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`3
`
`a No Access . March 1999
`The effect of disorder on excited state dynamics in organic
`molecular films
`
`A. J. Makinen, S. Xu, Z. Zhang, S. J. Diol, Yongli Gao, M. G. Mason, A. A. Muenter, D. A. Mantell
`
`and A. R. Melnyk
`
`Appl. Phys. Lett. 74, 1296 (1999); https://doi.org/10.1063/1.123529
`
`SHOW ABSTRACT
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
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`12/19
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`Ex. 1053, Page 12
`Ex. 1053, Page 12
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`Applied Physics Letters: Vol 74, No 9
`
`a No Access . March 1999
`Mechanism for the reduction of interstitial supersaturations in
`MeV-implantedsilicon
`V. C. Venezia, T. E. Haynes, Aditya Agarwal, L. Pelaz, H.-J. Gossmann, D. C. Jacobson and D. J.
`
`Eaglesham
`
`Appl. Phys. Lett. 74, 1299 (1999); https://doi.org/10.1063/1.123530
`
`SHOW ABSTRACT
`
`MAGNETISM AND SUPERCONDUCTIVITY
`
`a No Access . March 1999
`High-7. directly coupled direct current SQUID gradiometer with
`flip-chip flux transformer
`Y. J. Tian, S. Linzen, F. Schmid, L. Dérrer, R. Weidl and P. Seidel
`
`Appl. Phys. Lett. 74, 1302 (1999); https://doi.org/10.1063/1.123531
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Exchangebiasing in ferromagnetic amorphouswires: A
`controllable micromagnetic configuration
`J. J. Freijo, A. Hernando, M. Vazquez, A. Méndez and V. R. Ramanan
`
`Appl. Phys. Lett. 74, 1305 (1999); https://doi.org/10.1063/1.123532
`
`:
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`Ex. 1053, Page 13
`Ex. 1053, Page 13
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
`
`a No Access . March 1999
`Measuring the gigahertz response of recording heads with the
`magnetic force microscope
`Roger Proksch, Peter Neilson, Shane Austvold and J. J. Schmidt
`
`Appl. Phys. Lett. 74, 1308 (1999); https://doi.org/10.1063/1.123533
`
`3
`
`3
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Magnetic phase diagram of ultrathin Co/Si(111) film studied by
`surface magneto-optic Kerr effect
`Jyh-Shen Tsay and Yeong-Der Yao
`
`Appl. Phys. Lett. 74, 1311 (1999); https://doi.org/10.1063/1.123534
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Increasing the exchange-biasfield of Nig.5 Coo.5 O films by
`microstructural control
`
`Dinesh Martien, Kentaro Takano, A. E. Berkowitz and David J. Smith
`
`Appl. Phys. Lett. 74, 1314 (1999); https://doi.org/10.1063/1.123535
`
`SHOW ABSTRACT
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
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`14/19
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`Ex. 1053, Page 14
`Ex. 1053, Page 14
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`9/11/2020
`Applied Physics Letters: Vol 74, No 9
`Observation of supercurrentdistribution in YBaz Cus O7_; thin
`films using THz radiation excited with femtosecondlaser pulses
`S. Shikii, T. Kondo, M. Yamashita, M. Tonouchi, M. Hangyo, M. Tani and K. Sakai
`
`Appl. Phys. Lett. 74, 1317 (1999); https://doi.org/10.1063/1.123536
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Contributions of individual Fe sites to magnetocrystalline
`anisotropy of Y2 Fe;7_, Ga, compounds
`Zhao-hua Cheng, Bao-gen Shen, Fang-wei Wang and H. Kronmiller
`
`Appl. Phys.Lett. 74, 1320 (1999); https: //doi.org/10.1063/1.123537
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Superconducting transport properties of 2.2-GeV Au-ion
`irradiated c-axis twist Big Srz CaCuz Og.5 bicrystals
`Qiang Li, Y. N. Tsay, M. Suenaga, G. Wirth, G. D. Gu and N. Koshizuka
`
`Appl. Phys. Lett. 74, 1323 (1999); https://doi.org/10.1063/1.123538
`
`SHOW ABSTRACT
`
`DIELECTRICS AND FERROELECTRICITY
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
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`Ex. 1053, Page 15
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`Applied Physics Letters: Vol 74, No 9
`
`a No Access . March 1999
`Injection-controlled size effect on switching of ferroelectric thin
`films
`
`A. K. Tagantsev and I. A. Stolichnov
`
`Appl. Phys. Lett. 74, 1326 (1999); https://doi.org/10.1063/1.123539
`
`SHOW ABSTRACT
`
`DEVICE PHYSICS
`
`a No Access . March 1999
`Ultrahigh-density atomic force microscopy data storage with
`erase capability
`G. Binnig, M. Despont, U. Drechsler, W. Haberle, M. Lutwyche,P. Vettiger, H. J. Mamin, B. W.
`
`Chui and T. W. Kenny
`
`Appl. Phys. Lett. 74, 1329 (1999); https://doi.org/10.1063/1.123540
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`Microscale lithography via channel stamping: Relationships
`betweencapillarity, channelfilling, and debonding
`P. M. Moran and F. F. Lange
`
`Appl. Phys. Lett. 74, 1332 (1999); https://doi.org/10.1063/1.123541
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`Ex. 1053, Page 16
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`Applied Physics Letters: Vol 74, No 9
`
`a No Access . March 1999
`A four-color quantum well infrared photodetector
`M. Z. Tidrow, Xudong Jiang, ShengS. Li and K. Bacher
`
`Appl. Phys. Lett. 74, 1335 (1999); https://doi.org/10.1063/1.123542
`
`SHOW ABSTRACT
`
`a No Access . March 1999
`High-density three-dimensional optical data storage ina
`stacked compact disk format with two-photon writing and
`single photon readout
`Haridas E. Pudavar, MukeshP. Joshi, Paras N. Prasad and BruceA. Reinhardt
`
`Appl. Phys. Lett. 74, 1338 (1999); https://doi.org/10.1063/1.123543
`
`SHOW ABSTRACT
`
`INTERDISCIPLINARY AND GENERAL PHYSICS
`
`No Access . March 1999
`Molecular dynamics simulation study of the fluence dependence
`of particle yield and plume composition in laser desorption and
`ablation of organic solids
`Leonid V. Zhigilei and Barbara J. Garrison
`
`Appl. Phys. Lett. 74, 1341 (1999); https://doi.org/10.1063/1.123544
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
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`Ex. 1053, Page 17
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`9/11/2020
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`Applied Physics Letters: Vol 74, No 9
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`SHOW ABSTRACT
`
`a No Access . March 1999
`Transient grating measurements of picosecond acoustic pulses
`in metal films
`
`Timothy F. Crimmins, A. A. Maznev and Keith A. Nelson
`
`Appl. Phys. Lett. 74, 1344 (1999); https://doi.org/10.1063/1.123545
`
`SHOW ABSTRACT
`
`ERRATA
`
`. March 1999
`a Full
`Erratum: “An application of the apertureless scanning near-field
`optical microscopy: Imaging a GaAlAslaser diode in operation”
`[Appl. Phys. Lett. 73, 3333 (1998)]
`R. Bachelot, G. Wurtz and P. Royer
`
`Appl. Phys. Lett. 74, 1347 (1999); https://doi.org/10.1063/1.123547
`
`eSpectra
`
`The revolutionary new
`tool for spectral analysis
`
`https://aip.scitation.org/toc/apl/74/9?size=all&
`
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`Ex. 1053, Page 18
`Ex. 1053, Page 18
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`Applied Physics Letters: Vol 74, No 9
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`9/11/2020
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`Ex. 1053, Page 19
`Ex. 1053, Page 19
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`9/11/2020
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`Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering: Applied Physics Lett...
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`a No Access
`Published Online: 23 February 1999
`
`Accepted: January 1999
`
`Growthand optical characterization of
`aluminum nitride thin films deposited
`on silicon by radio-frequency sputtering
`
`Appl. Phys. Lett. 74, 1209 (1999); https://doi.org/10.1063/1.123501
`
`E. Dogheche and D. Rémiens
`
`e Laboratoire des Matériaux Avancés Céramiques, Université de Valenciennes et du Hainaut,
`
`Cambrésis Le Mont-Houy BP311, Valenciennes F-59304, France
`
`A. Boudrioua and J. C. Loulergue
`more...
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`https://aip.scitation.org/doi/10.1063/1.123501
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`¥ PDF
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`1/6
`
`Ex. 1053, Page 20
`Ex. 1053, Page 20
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`9/11/2020
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`Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering: Applied PhysicsLett...
`
`Topics v
`
`ABSTRACT
`
`Highly textured hexagonal aluminum nitride (AIN) thin films were
`
`deposited onsilicon substrates by radio-frequency magnetron sputtering
`
`at a substrate temperature below 400°C and annealed in the temperature
`
`range of 400-450°Cby rapid thermal annealing. The optical and the
`
`electro-optical properties have been investigated using the prism-coupling
`technique. Both ordinary and extraordinaryrefractive indices (ny =2.0058
`and ne=2.0374 at 632.8 nm) were respectively determined from the
`
`transverseelectric and the transverse magnetic modeexcitations.
`
`Furthermore,refractive index profiles analysis by using an improved
`
`inverse Wentzel-Kramer-Brillouin method reveals a step-like behavior of
`
`AIN thin films. The optical losses have been evaluated to be around 7 dB
`
`cm". The electro-optic coefficient r13 of 0.98 pm/V has been measured
`
`from thevariation of the shift of guided-modesspectrum as a function of
`
`the applied electric field in the experiment.
`
`REFERENCES
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`1.
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`H. Okano, N. Tanaka, Y. Takahashi, T. Tanaka, K. Shibata, and S. Nakano,
`
`https://aip.scitation.org/doi/10.1063/1.123501
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`2/6
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`Ex. 1053, Page 21
`Ex. 1053, Page 21
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`

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`9/11/2020
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`Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering: Applied PhysicsLett...
`
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`3/6
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`Ex. 1053, Page 22
`Ex. 1053, Page 22
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`

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`9/11/2020
`
`Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering: Applied PhysicsLett...
`
`F. Flory, G. Albrand, D. Endelma, N. Maythaveekulchai, E. Pelletier, and H.
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`Rigneault, Opt. Eng. (Bellingham) 33, 1669 (1994). Google Scholar, Crossref
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`K. S. Chiang, J. Lightwave Technol. LTS, 85 (1985). Google Scholar
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`A. Boudrioua, E. Dogheche, D. Remiens,andJ. C. Loulergue,J. Appl. Phys.
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`85, 1 (1999). Google Scholar, Scitation
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`
`4/6
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`Ex. 1053, Page 23
`Ex. 1053, Page 23
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`

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`9/11/2020
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`Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering: Applied PhysicsLett...
`
`Scitation
`
`https://aip.scitation.org/doi/10.1063/1.123501
`
`6/6
`
`Ex. 1053, Page 24
`Ex. 1053, Page 24
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`

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`9/11/2020
`
`Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering: Applied PhysicsLett...
`
`© 1999 American Institute of Physics.
`
`Don't Learn Pentatonic Scal
`Discover How The Guitar Grid And 7 Feeli
`World On Guitar
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`https://aip.scitation.org/doi/10.1063/1.123501
`
`5/6
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`Ex. 1053, Page 25
`Ex. 1053, Page 25
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