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`Samsung Electronics Co., Ltd. v. Demaray LLC
`Samsung Electronic's Exhibit 1046
`Exhibit 1046, Page 1
`
`

`

`
`
`>>>>>>>>>—aRESSEEESSS EESDSSSSSSS[praCerrar
`
`
`
`yuojed“S°()
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`€007‘72°
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`STJ9T0NS 7H097°LS9'°9SO
`
`Ex. 1046, Page 2
`
`

`

`
`
`
`
`
`
`U.S. Patent
`
`
`Dec. 2, 2003
`
`
`
`
`Sheet 2 of 18
`
`
`
`US 6,657,260 B2
`
`Ex. 1046, Page 3
`
`Ex. 1046, Page 3
`
`

`

`Dee. 2, 2003
`
`
`
`
`Sheet 3 of 18
`
`
`U.S. Patent
`
`
`
`
`
`
`
`
`
`
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`
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`
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`
`407
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`(eeESceen
`165170169168197| |NNeee401402403SF406
`167166
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`173.172«171
`
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`
`
`US 6,657,260 B2
`
`
`
`Ex. 1046, Page 4
`
`Ex. 1046, Page 4
`
`

`

`
`U.S. Patent
`
`
`
`
`Dec. 2, 2003
`
`
`
`
`Sheet 4 of 18
`
`
`
`US 6,657,260 B2
`
`PNW8/8ENAIKAALLELESSALAIGACi
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`
`Ex. 1046, Page 5
`
`Ex. 1046, Page 5
`
`
`
`
`
`
`

`

`U.S. Patent
`
`
`
`
`Dec. 2, 2003
`
`
`
`
`Sheet 5 of 18
`
`
`US 6,657,260 B2
`
`
`
`
`
`209
`
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`NANAAANWS\
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`Ex. 1046, Page 6
`
`Ex. 1046, Page 6
`
`

`

`
`U.S. Patent
`
`
`
`
`Dec. 2, 2003
`
`
`
`
`Sheet 6 of 18
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`
`
`US 6,657,260 B2
`
`
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`Ex. 1046, Page 7
`
`Ex. 1046, Page 7
`
`

`

`U.S. Patent
`
`
`
`
`Dec. 2, 2003
`
`
`
`
`Sheet 7 of 18
`
`
`US 6,657,260 B2
`
`
`
`V DH
`
`
`
`V DH
`
`
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`QUT
`
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`IN —— [——
`
`VOL
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`
`
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`VoL
`
`[——
`
`
`
`FIG.
`
`
`
`
`7A
`
`
`
`FIG.
`
`
`7B
`
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`
`Ex. 1046, Page 8
`
`Ex. 1046, Page 8
`
`

`

`
`U.S. Patent
`
`
`
`
`Dec. 2, 2003
`
`
`
`
`Sheet 8 of 18
`
`
`
`US 6,657,260 B2
`
`1105
`
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`
`ATfeatNG:eI=ARNIKO|SS-NBSaINLNBieyeON:DMFRAPZoPZN{yTAipBREIL
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`BNNea”OrrrrTITELARHDEYPALATEBNAPRONKKKMNONLILIPPLEFLAS
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`
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`
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`
`
`9
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`11083
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`
`Ex. 1046, Page 9
`
`Ex. 1046, Page 9
`
`
`
`
`

`

`U.S. Patent
`
`
`
`
`Dee. 2, 2003
`
`
`
`
`Sheet 9 of 18
`
`
`US 6,657,260 B2
`
`
`
`1107
`
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`
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`
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`
`
`
`PIXEL PORTION
`
`FIG.
`
`
`
`10
`
`
`
`Ex. 1046, Page 10
`
`Ex. 1046, Page 10
`
`

`

`
`U.S. Patent
`
`
`
`Dee. 2, 2003
`
`
`
`
`Sheet 10 of 18
`
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`US 6,657,260 B2
`
`
`
`
`
`
`
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`Ex. 1046, Page 11
`
`Ex. 1046, Page 11
`
`

`

`3004
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`U.S. Patent
`
`
`
`
`Dee. 2, 2003
`
`
`
`
`Sheet 11 of 18
`
`
`
`US 6,657,260 B2
`
`3006
`
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`
`FIG.
`
`
`
`12B
`
`
`
`Ex. 1046, Page 12
`
`

`

`U.S. Patent
`
`
`
`
`
`Dec. 2, 2003
`
`
`
`
`Sheet 12 of 18
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`
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`US 6,657,260 B2
`
`
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`Ex. 1046, Page 13
`
`Ex. 1046, Page 13
`
`

`

`U.S. Patent
`
`
`
`
`Dee. 2, 2003
`
`
`
`
`Sheet 13 of 18
`
`
`US 6,657,260 B2
`
`
`
`
`
`
`
`
`
`Ex. 1046, Page 14
`
`Ex. 1046, Page 14
`
`

`

`U.S. Patent
`
`
`
`
`Dee. 2, 2003
`
`
`
`
`Sheet 14 of 18
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`
`US 6,657,260 B2
`
`
`
`[V]
`
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`
`ASSURANCEVOLTAGE
`
`ASSUMED
`
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`
`
`
`0
`
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`
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`
`
`
`
`1
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`
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`
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`
`Ex. 1046, Page 15
`
`Ex. 1046, Page 15
`
`

`

`
`U.S. Patent
`
`
`
`
`Dec. 2, 2003
`
`
`
`
`Sheet 15 of 18
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`
`
`US 6,657,260 B2
`
`900
`
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`
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`
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`
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`
`
`
`Ex. 1046, Page 16
`
`Ex. 1046, Page 16
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`

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`U.S. Patent
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`Dee. 2, 2003
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`Sheet 16 of 18
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`US 6,657,260 B2
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`Ex. 1046, Page 17
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`Ex. 1046, Page 17
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`

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`U.S. Patent
`
`Dec. 2, 2003
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`Sheet 17 of 18
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`US 6,657,260 B2
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`ey
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`FIG.
`
`Ex. 1046, Page 18
`
`Ex. 1046, Page 18
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`
`

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`U.S. Patent
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`Dee. 2, 2003
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`Sheet 18 of 18
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`US 6,657,260 B2
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`
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`
`
`
`Ex. 1046, Page 19
`
`Ex. 1046, Page 19
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`

`

`
`
`US 6,657,260 B2
`
`
`
`
`1
`THIN FILM TRANSISTORS HAVING
`
`
`
`
`SOURCE WIRING AND TERMINAL
`
`
`
`
`PORTION MADE OF THE SAME MATERIAL
`
`
`
`
`AS THE GATE ELECTRODES
`
`
`
`
`
`
`2
`
`
`
`
`
`
`consumption is realized even when a screen size is
`
`
`
`
`
`increased, and a manufacturing method thereof
`
`
`
`
`
`
`According to the present
`invention, a gate electrode
`structure is made to be a laminate structure in which a
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`material film containing mainly TaN or W is used asa first
`
`
`
`
`
`
`
`layer for preventing diffusion to a channel forming region,
`BACKGROUND OF THE INVENTION
`
`
`
`
`
`
`
`
`
`a low resistance material film containing mainly Al or Cu is
`
`
`
`
`
`
`
`
`1. Field of the Invention
`used as a secondlayer, and a material film containing mainly
`
`
`
`
`
`
`
`
`
`
`
`Ti is used as a third layer. Thus, a resistance of a wiring is
`
`
`
`
`
`
`The present invention relates to a semiconductor device
`reduced.
`
`
`
`
`
`
`
`having a circuit composed of thin film transistors
`
`
`
`
`
`Accordingto a structure of the present invention disclosed
`
`
`
`
`
`
`
`(hereinafter referred to as TFTs) and a manufacturing
`
`
`
`
`
`
`in this specification, a semiconductor device including a
`
`
`
`
`
`
`
`
`method thereof. The present
`invention relates to,
`for
`
`
`
`
`
`
`
`
`
`
`
`
`TFT which is composed of a semiconductor layer formed on
`example, a device represented by a liquid crystal display
`
`
`
`
`
`
`
`
`
`an insulating surface, an insulating film formed on the
`
`
`
`
`
`
`
`
`device (on whicha liquid crystal module is mounted) and an
`
`
`
`
`
`
`
`electronic device on which such a device is mounted as a
`semiconductor layer, and a gate electrode formed on the
`
`
`
`
`
`
`
`
`
`
`
`
`
`insulating film is characterized by comprising: a pixel por-
`
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`
`
`
`
`
`
`
`
`tion includinga first n-channel TFT having a source wiring
`
`
`
`
`
`
`Note that the semiconductor device in this specification
`
`
`
`
`
`
`
`
`made of the same material as the gate electrode; a driver
`
`
`
`
`
`
`indicates a device in general, which can function by utilizing
`
`
`
`
`
`
`circuit including a circuit which is composed of a second
`
`
`
`
`
`a semiconductor characteristic, and an electro-optical
`
`
`
`
`
`
`
`n-channel TFT and a third n-channel TFT; and a terminal
`
`
`
`
`
`
`device, a light emitting device, a semiconductor circuit, and
`
`
`
`
`
`
`
`
`portion made of the same material as the gate electrode.
`an electronic device each are the semiconductor devices.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`In the above-mentioned structure, the gate electrode is
`
`
`
`
`
`2. Description of the Related Art
`
`
`
`
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`characterized by having a laminate structure of a material
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`In recent years, a technique for constructing a thin film
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`film containing mainly TaN (a first layer), a material film
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`transistor (TFT) using a semiconductor thin film (about
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`containing mainly Al (a second layer), and a material film
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`several to several hundreds nm in thickness) formed on a
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`containing mainly Ti (a third layer). Also, the gate electrode
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`substrate having an insulating surface has been noted. The
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`is characterized by having a laminate structure of a material
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`thin film transistor is widely applied to an electronic device
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`film containing mainly W (a first layer), a material film
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`such as an IC or an electro-optical device and its develop-
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`containing mainly Al (a second layer), and a material film
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`ment as a switching element of an image display device is
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`containing mainly Ti (a third layer).
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`particularly demanded.
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`According to such agate electrode structure, when an ICP
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`Conventionally, a liquid crystal display device is known
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`(inductively coupled plasma) etching method is used, end
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`as the image display device. Since a high resolution image
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`portions of the gate electrode can be formed into a taper
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`is obtained as compared with a passive liquid crystal display
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`shape. Note that a taper angle in this specification indicates
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`device, an active matrix liquid crystal display device is used
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`an angle formed by a horizontal surface and a side surface
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`in many cases. According to the active matrix liquid crystal
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`of a material layer. Also, in this specification, a side surface
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`display device, when pixel electrodes arranged in matrix are
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`having the taper angle is called a taper shape and a portion
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`driven, a display pattern is formed on a screen. In more
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`having the taper shape is called a taper portion.
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`detail, when a voltage is applied between a selected pixel
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`Also, in the above-mentionedstructure, the present inven-
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`electrode and an opposite electrode corresponding to the
`tion is characterized in that the second n-channel TFT and
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`selected pixel electrode, a liquid crystal
`layer located
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`the third n-channel TFT compose an EEMOScircuit or an
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`between the pixel electrode and the opposite electrode is
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`EDMOScircuit. The driver circuit of the present invention
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`optically modulated and the optical modulation is recog-
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`is made from an NMOScircuit composed of only n-channel
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`nized as the display pattern by an observer.
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`TFs, and the TFTs of the pixel portion are also composed
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`The range of use of such an active matrix liquid crystal
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`of n-channel TFTs. Thus, a process is simplified. A general
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`display device is increased. Demandsfor a higher resolution,
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`driver circuit is designed based on a CMOScircuit com-
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`a higher opening ratio, and high reliability are increased
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`posed of an n-channel semiconductor element and a
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`along with increase in a screen size. Simultaneously,
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`p-channel semiconductor element, which are complemen-
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`demandsfor improvementof productivity and cost reduction
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`tally combined with each other. However, according to the
`are also increased.
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`present invention, the driver circuit is composed of a com-
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`Conventionally, when a TFT is manufactured using alu-
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`bination of only n-channel TFTs.
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`minum as a material of a gate wiring of the above-mentioned
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`Further,
`in order
`to achieve the above-mentioned
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`TFT, a protrusion such as hillock or a whisker is produced
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`structure, according to a structure of the present invention,
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`by thermal treatment and an aluminum atom is diffused to a
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`there is provided a method of manufacturing a semiconduc-
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`channel forming region. Thus, an operation failure of the
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`tor device including a driver circuit, a pixel portion, and a
`TFT and a deterioration of a TFT characteristic are caused.
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`terminal portion, which are located on an insulating surface,
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`In order to solve this, a metallic material which can be
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`the method comprising the steps of:
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`resistant to thermal treatment, typically, a metallic element
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`forming a semiconductor layer on the insulating surface;
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`having a high melting point is used. However, a problem in
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`formingafirst insulating film on the semiconductorlayer;
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`which a wiring resistance is increased due to increase in a
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`forming a gate electrode, a source wiring of the pixel
`screen size arises, and increase in power consumption and
`the like are caused.
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`portion, and an electrode of the terminal portion on the
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`first insulating film;
`SUMMARYOF THE INVENTION
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`adding an impurity element for providing an n-type to the
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`Therefore, an object of the present inventionis to provide
`semiconductorlayer using the gate electrode as a mask
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`a structure of a semiconductor device in which low power
`to form an n-type impurity region;
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`10
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`Ex. 1046, Page 20
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`Ex. 1046, Page 20
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`

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`3
`4
`DETAILED DESCRIPTION OF THE
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`etching the gate electrode to form a taper portion;
`PREFERRED EMBODIMENTS
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`forming a secondinsulating film which covers the source
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`wiring of the pixel portion and the terminal portion; and
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`An embodiment mode of the present invention will be
`described below.
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`forming a gate wiring and a source wiring of the driver
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`circuit on the second insulating film.
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`First, a base insulating film is formed on a substrate and
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`In the above-mentioned structure, it is characterized in
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`then a semiconductor layer having a predetermined shapeis
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`that, in the step of forming the gate electrode, the source
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`formed byafirst photolithography step.
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`wiring of the pixel portion, and the electrode of the terminal
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`Next, an insulating film (including a gate insulating film)
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`portion, a material film containing mainly TaN, a material
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`covering the semiconductorlayer is formed. A first conduc-
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`film containing mainly Al, and a material film containing
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`tive film, a second conductive film, and a third conductive
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`mainly Ti are formed to be laminated, and then etched using
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`film are laminated on the insulating film. First etching
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`a mask to form the gate electrode, the source wiring of the
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`processing is performedfor the laminated films by a second
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`pixel portion, and the electrode of the terminal portion. Also,
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`photolithography step to form a gate electrode made from a
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`in the above-mentioned structure, it is characterized in that,
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`first conductive layer and a second conductive layer, a
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`in the step of forming the gate electrode, the source wiring
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`Source wiring of a pixel portion, and an electrode of a
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`of the pixel portion, and the electrode of the terminal
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`terminal portion. Note that, in the present invention,after the
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`portion, a material film containing mainly W, a material film
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`gate electrode is formed, a gate wiring is formed on an
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`containing mainly Al, and a material film containing mainly
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`interlayer insulating film.
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`Ti are formed to be laminated, and then etched using a mask
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`Next, with a state in which a resist mask formed in the
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`to form the gate electrode, the source wiring of the pixel
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`second photolithography step is left as it is, an impurity
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`portion, and the electrode of the terminal portion.
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`element (phosphorusor the like) for providing an n-type is
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`Also, according to the present invention, a liquid crystal
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`added to the semiconductor layer to form n-type impurity
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`display device having the pixel portion and the driver circuit
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`regions (having high concentrations) in self alignment.
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`as described in the above-mentioned structure or a light
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`Next, with a state in which the resist mask formed in the
`emitting device with an OLED havingthe pixel portion and
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`the driver circuit as described in the above-mentionedstruc-
`second photolithography step is left as it
`is, an etching
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`ture can be manufactured.
`condition is changed and second etching processing is
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`performed to form a first conductive layer (first width), a
`Also, according to the present invention, since a step of
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`second conductive layer (second width), and a third con-
`manufacturing a p-channel TFT is omitted, a manufacturing
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`ductive layer (third width), which have taper portions. Note
`step of a liquid crystal display device or a light emitting
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`that the first width is wider than the second width, and the
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`device is simplified and a manufacturing cost can be
`reduced.
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`second width is wider than the third width. Here, an elec-
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`trode composed of the first conductive layer, the second
`BRIEF DESCRIPTION OF THE DRAWINGS
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`conductive layer, and the third conductive layer becomes a
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`gate electrode of an n-channel TFT(first gate electrode).
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`In the accompanying drawings:
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`A material film containing mainly TaN or W may be used
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`FIGS. 1A to 1C show manufacturing steps of an
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`as the first conductive layer which is in contact with the
`AM-LCD;
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`insulating film in order to prevent diffusion to a channel
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`FIGS. 2A and 2B show manufacturing steps of the
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`forming region. Also, a low resistance material film con-
`AM-LCD;
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`taining mainly Al or Cu may be used as the second conduc-
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`FIG. 3 shows manufacturing steps of the AM-LCD;
`tive layer. Further, a material film containing mainly Ti,
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`which has a low contact resistance, may be usedasthe third
`FIG. 4 is a top view of a pixel;
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`conductive layer.
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`FIG. 5 shows an appearance of a liquid crystal module;
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`Next, after the resist mask is removed, an impurity
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`FIG. 6 is a cross sectional view of a transmission type
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`element for providing an n-type is added to the semicon-
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`liquid crystal display device;
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`ductor layer through the insulating film using the first gate
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`FIGS. 7A and 7B show structures of NMOScircuits;
`electrode as a mask.
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`FIGS. 8A and 8B showstructures of a shift resistor;
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`After that, a resist mask is formed by a third photolithog-
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`FIG. 9 is a top view of a pixel portion of the present
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`raphy method (step) and an impurity element for providing
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`invention;
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`an n-type is selectively added in order to reduce an off
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`FIG. 10 is a cross sectional view ofthe pixel portion of the
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`current of a TFT in the pixel portion.
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`present invention;
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`Next, an interlayer insulating film is formed anda trans-
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`FIGS. 11A to 11C show examples of electronic devices;
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`parent conductive film is formed thereon. The transparent
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`FIGS. 12A and 12B show examplesof electronic devices;
`conductive film is patterned by a fourth photolithography
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`method (step) to form a pixel electrode. Then, contact holes
`FIG. 13 is an observation SEM picture after etching;
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`are formed byafifth photolithography step. Here, contact
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`FIG. 14 is an observation SEM picture after etching:
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`holes which reach impurity regions, a contact hole which
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`FIG. 15 shows a relationship between reliability (20-
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`reachesthe gate electrode, and a contact hole which reaches
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`hours assurance voltage and 10-years assurance voltage) and
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`a source wiring are formed.
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`a Lov length in a TFT of a driver circuit;
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`Next, a conductive film made of a low resistance metallic
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`FIGS. 16A and 16B are a top view of an EL module and
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`material is formed. A gate wiring, an electrode for connect-
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`a cross sectional view thereof, respectively;
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`ing the source wiring and the impurity region, and an
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`FIG. 17 is a cross sectional view of an EL module;
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`electrode for connecting the pixel electrode and the impurity
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`FIG. 18 showsa structure of a gate side driver circuit;
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`region are formed by a sixth photolithography step. In the
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`FIG. 19 is a timing chart of decoder input signals; and
`present invention, the gate wiring is electrically connected
`FIG. 20 showsa structure of a source side driver circuit.
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`with the first gate electrode or a second gate electrode
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`Ex. 1046, Page 21
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`US 6,657,260 B2
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`65
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`Ex. 1046, Page 21
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`

`

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`US 6,657,260 B2
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`
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`Embodiment
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`6
`5
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`conductor layer which is to be the channel forming region.
`through a contact hole provided in the interlayer insulating
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`In this case, the element substrate can be formed by using
`film. Also, the source wiring is electrically connected with
`seven masks.
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`the impurity region (source region) through a contact hole
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`provided in the interlayer insulating film. Further, the elec-
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`Also, description has been made using the n-channel TFT
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`trode connected with the pixel electrode is electrically
`here. However, it goes without saying that a p-channel TFT
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`connected with the impurity region (drain region) through a
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`can be formed by using a p-type impurity elementinstead of
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`contact hole provided in the interlayer insulating film.
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`the n-type impurity element. In this case, the whole driver
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`circuit is composed of p-channel TFTs and the pixel portion
`Thus, an element substrate including a pixel portion
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`having a pixel TFT (n-channel TFT) andadriver circuit
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`10
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`having an EEMOScircuit (n-channel TFTs) as shown in
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`The present invention made by the abovestructure will be
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`FIG. 7A can be formed by performing a photolithography
`described in more detail based on the following embodi-
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`step for six times intotal, that is, by using six masks. Note
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`that the example in which a transmission type display device
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`is manufacturedis indicated here. However,a reflection type
`Embodiment 1
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`display device can be also manufactured using a material
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`An embodimentof the present invention will be described
`having a high reflecting property for the pixel electrode.
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`using FIGS. 1A to 1C to FIG. 6. Here, a method of
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`Whenthe reflection type display device is manufactured,
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`simultaneously manufacturing TFTs composing a pixel por-
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`since the pixel electrode can be formed being simultaneous
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`tion and TFTs (only n-channel TFTs) composing a driver
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`with the gate wiring, the element substrate can be formed by
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`circuit provided in a periphery of the pixel portion on the
`using five masks.
`same substrate will be described in detail.
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`Also, an active matrix light emitting device having an
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`In FIG. 1A,a glass substrate, a quartz substrate, a ceramic
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`OLED(organic light emitting device) can be manufactured.
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`substrate, or the like can be used as a substrate 100. A silicon
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`Even in case of the light emitting device, the whole driver
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`substrate, a metallic substrate, or a stainless substrate, in
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`circuit is composed of n-channel TFTs and the pixel portion
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`which an insulating film is formed on the surface, may also
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`is also composed of a plurality of n-channel TFTs. In the
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`be used. Also, a plastic substrate having a heat resistance,
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`light emitting device employing the OLED, at least a TFT
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`which is resistant
`to a processing temperature in this
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`which functions as a switching element and a TFT for
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`embodiment may be used.
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`supplying a current to the OLEDare provided in each pixel.
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`Then, as shown in FIG. 1A, a base insulating film 101
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`Irrespective of a circuit structure of a pixel and a driving
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`made from an insulating film such as a silicon oxide film, a
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`method, a TFT which is electrically connected with the
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`silicon nitride film, or a silicon oxynitride film (SiO,N,) is
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`OLED and supplies a current
`thereto is made to be an
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`formed on the substrate 100. As a typical example, a
`n-channel TFT.
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`laminate structure is used in which a two-layered structure
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`The OLED hasa layer including an organic compound
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`is used for the base insulating film 101, andafirst silicon
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`35
`(organic light emitting material) in which luminescence
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`oxynitride film 101a is formed with a thickness of 50 nm to
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`produced by applying an electric field thereto (electro
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`100 nm using SiH,, NH,, and N.O as reactive gases and a
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`luminescence) is obtained (hereinafter referred to as an
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`second silicon oxynitride film 1015 is formed with a thick-
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`organic light emitting layer), an anode, and a cathode. The
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`ness of 100 nm to 150 nm using SiH,, and N,O asreactive
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`luminescence in the organic compoundincludes light emis-
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`gases. Also, a silicon nitride film having a film thickness of
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`sion produced whenit is returned from a singlet excitation-
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`10 nm or less may be used as the base insulating film 101.
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`state to a ground state (fluorescence) and light emission
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`When the silicon nitride film is used,
`it has an effect of
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`produced whenit is returned fromatriplet excitation-state to
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`improving gettering efficiency in a gettering step which will
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`a ground state (phosphorescence).
`In case of the light
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`be performedlater in addition to an effect such as a blocking
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`emitting device of the present
`invention, of the above-
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`layer. Nickel tends to moveto a region having a high oxygen
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`mentioned light emissions, either light emission may be
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`concentration at gettering. Thus, it is extremely effective to
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`used or both the light emissions may be used.
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`use the silicon nitride film as the base insulating film which
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`Note that in this specification, all layers formed between
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`is in contact with a semiconductorfilm. Also, a three-layered
`the anode and the cathode in the OLED are defined as an
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`structure may be used in which thefirst silicon oxynitride
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`organic light emitting layer. Concretely, the organic light
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`the second silicon oxynitride film, and the silicon
`film,
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`nitride film are laminated in order.
`emitting layer includes a light emitting layer, a hole injection
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`layer, an electron injection layer, a hole transport layer, and
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`The semiconductorfilm as an active layer is obtained by
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`an electron transport
`layer. Basically,
`the OLED has a
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`crystallizing an amorphous semiconductor film formed on
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`structure in which the anode, the light emitting layer, and the
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`the base insulating film 101. The amorphous semiconductor
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`cathode are laminated in order. In addition to this structure,
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`film is formed with a thickness of 30 nm to 60 nm. After that,
`there is a case where the OLED hasa structure in which the
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`a metallic element (nickel in this embodiment) having a
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`anode, the hole injection layer, the light emitting layer, and
`catalytic action for promoting crystallization is used and a
`the cathode are laminated in orderor a structure in which the
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`nickel acetate solution including nickel at 1 ppm to 100 ppm
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`anode, the hole injection layer, the light emitting layer, the
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`in weight conversion is applied onto the surface of the
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`electron transport layer, and the cathode are laminated in
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`amorphous semiconductor film with a spinner to form a
`order.
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`catalytic contained layer.
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`Also, when an EDMOScircuit as shown in FIG. 7B is
`With keeping a state in which the amorphous semicon-
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`formed by combining an enhancementtype and a depletion
`ductorfilm is in contact with the catalytic element contained
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`type, before the formation of the conductive film, a mask is
`layer, thermal treatment for crystallization is performed. In
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`formed in advance, and an element belonging to the group
`this embodiment, the thermal treatment is performed by an
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`15 of the periodic table (preferably, phosphorus) or an
`RTA method. A lamp light source for heating is tuned on for
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`element belonging to the group 13 of the periodic