`Samsung Electronic's Exhibit 1015
`Exhibit 1015, Page 1
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`All rights reserved. Published simultaneously in Canada.
`Reproduction ortranslation of any part of this work
`beyond that permitted by Sections 107 or 108 of the
`1976 United States Copyright Act without the permission
`of the copyright owneris unlawful. Requests for
`permission orfurther information should be addressed to
`the Permissions Department, John Wiley & Sons, Inc.
`
`Library of Congress Cataloging in Publication Data
`Chapman, Brian N
`Glow discharge processes.
`
`QC702.7.P6C48
`ISBN 0-471-07828-X
`
`537.5'2
`
`80-17047
`
` Copyright © 1980 by John Wiley & Sons, Inc.
`
`‘A Wiley-Interscience publication.”
`Includes bibliographical references and index.
`1. Sputtering (Physics)
`2. Glow discharges.
`I. Title.
`Il. Title: Plasma etching.
`
`Printed in the United States of America
`20 19 18 17 16 15 14 13
`
`Ex. 1015, Page
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`Ex. 1015, Page 2
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`PLASMA ETCHING
`
`much thinner dark space sheath. The two effects would be expected to balance
` 324
`
`quarter of the applied rf peak-to-peak voltage (Chapter 5) and so typically 75 V
`— 250 V for practical plasma etching processes. This is confirmed byelectrical
`measurements and by observation of the dark spaces formed at the sheaths. The
`energy of ion bombardment on an electrode is determined by the sheath voltage
`and by collisions in the sheath, as discussed in Chapters 4 and 5.
`Reactive ion etching systems (Figure 7-24) are essentially converted sputtering
`systems. In sputtering, intense ion bombardment at the target is required, and
`nowhereelse. This is achieved by making the target area muchless than the area
`of the grounded chamber and baseplate. As a result, the sheath at the walls is
`very small, but the sheath at the target, and henceat the wafer, is about half the
`rf peak-to-peak, amounting typically to -300 V.
`The different operating pressures of the two diode systems should not influ-
`ence ion bombardment energies very greatly, because the larger number of
`collisions per unit length at the higher pressure is offset by the consequently
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`
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`High Pressure Diode
`Plasma Etching &
`Deposition
`—Grounded Wafer
`
`Figure 7-23. High pressure diode plasma etching and deposition-grounded wafer
`
`Ex. 1015, Page 3
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`Ex. 1015, Page 3
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