Samsung Electronics Co., Ltd. v. Demaray LLC
`Samsung Electronic's Exhibit 1004
`Exhibit 1004, Page 1
`
`

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`
`G09160wunOld'snveest
`
`
`
`neea]far]
`
`|_| Presentation ofMultiple Dep. Claim(s) a
`Total Application Pages
`If over 100 pages, add $250 for
`(specification, drawings, and printed
`each additional 50 pages or
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`x]
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`The Commissioneris hereby authorized to charge the fee of $1,000.00 to Deposit
`Account No. 06-0916.
`
`The Commissioneris hereby authorized to charge any fees which maybe required
`including fees due under 37 C.F.R. § 1.16 and any other fees due under 37 C.F.R.
`§ 1.17, or credit any overpayment during the pendencyofthis application to
`Deposit Account No. 06-0916.
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`X The prior application is assigned of record to: Symmorphix,Inc.
`
`Da
`
`x].
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`The powerof attorney in the prior application is to FINNEGAN, HENDERSON,
`FARABOW, GARRETT & DUNNER,L.L.P., Customer No. 22,852
`
`Since the power does not appear in the original declaration, a copy of the power in
`the prior application is enclosed.
`.
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`Please addressall correspondence to FFNNEGAN, HENDERSON, FARABOW,
`GARRETT and DUNNER,L.L.P., Customer Number 22,852.
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`10.
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`Xx
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`Also enclosed are an Information Disclosure Statement, Form PTO/SB/08, and
`onecited reference.
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`ms
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`Ex. 1004, Page 2
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`ai
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` Basic Utility Application Filing Fee
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`Ex. 1004, Page 2
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`Page 3 of 3
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`PETITION FOR EXTENSION.If any extension of time is necessary for the filing of this
`application, including any extension in parent Application No. 10/101,863, filed March 16, 2002,
`for the purpose of maintaining copendency betweenthe parent application and this application,
`and such extension has not otherwise been requested, such an extension is hereby requested, and
`the Commissioneris authorized to charge necessary fees for such an extension to our Deposit
`Account No. 06-0916. A duplicate copy of this paper is enclosed for use in charging the deposit
`account.
`
`FINNEGAN, HENDERSON, FARABOW,
`
` Dated: September 16, 2005
`
`By:
`
` ary ¥ Edwards
`Reg. No. 41,008
`
`FINNEGAN, HENDERSON, FARABOW,
`GARRETT & DUNNERL.L.P.
`901 New York Avenue, N.W.
`Washington, D.C. 20001-4413
`(650) 849-6622
`
`EXPRESS MAIL LABEL NO.
`EV 708643040 US
`
`Ex. 1004, Page 3
`
`Ex. 1004, Page 3
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`

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`i.
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`oe
`io ==
`PATENT 9 B=
`CustomerNumber22,852 oN =e
`AttomeyDocketNo. 9140.0016-02 ——
`
`-- =
`
`S09160nn o
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`@:
`
`c
`5
`2
`3
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`Commissioner for Patents
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`Prior Application Examiner: ESTRADA,Michelle
`
`Prior Application Art Unit: 2823
`SIR:This is a request for filing a
`(_] Continuation [1] Continuation-in-Part [X] Divisional Application under37 C.F.R.§ 1.53(b)
`ofpending priorApplication No. 10/101,863 filed March 16, 2002, ofHongmei ZHANG,
`Mukundan NARASINHAN,Ravi B. MULLAPUDI,and Richard E. DEMARAYfor BIASED
`PULSE DC REACTIVE SPUTTERING OF OXIDE FILMS.
`1,
`XX
`Enclosed is a complete copyofthe prior application including the oath or
`Declaration and drawings,ifany, as originally filed.I herebyverify that the
`attached papersareatrue copy ofprior Application No. 10/101,863 as originally
`filed on March16, 2002, which is incorporated herein by reference.
`2
`]
`A Preliminary Amendmentis enclosed.
`3
`x]
`Thefiling fee is calculated on the basis ofthe claims existing in the prior
`application as amendedin the Preliminary Amendmentfiled herewith.
`
`Ex. 1004, Page 4
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`Ex. 1004, Page 4
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`

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`G09160wcOld'sNveel
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`Page 2 of 3
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`Basic Utility Application Filing Fee
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`$300
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`[SentechTTaaie[eee[J
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`20aoe
`Cs
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`
`
`
`
`|_| Presentation of Multiple Dep. Claim(s)
`sor
`
`
`
`
`Total Application Pages
`
`If over 100 pages, add $250 for
`(specification, drawings, and printed
`
`
`each additional 50 pages or
`
`
`sequence or computerlisting)
`fraction thereof.
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`TReduction by 1/2 ifsmall entity 9|
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`
`OTAL APPLICATION FILING FEE
`$
`1,000.00
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`Total Claims
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`$
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`The Commissioner is hereby authorizedto charge the fee of $1,000.00 to Deposit
`Account No. 06-0916.
`
`The Commissioner is hereby authorized to charge any fees which may be required
`including fees due under 37 C.F.R. § 1.16 and anyother fees due under 37 C.FR.
`§ 1.17, or credit any overpayment during the pendencyofthis application to
`Deposit Account No. 06-0916.
`
`Theprior application is assigned ofrecordto: Symmorphix,Inc.
`The powerofattorney in the prior application is to FINNEGAN, HENDERSON,
`FARABOW, GARRETT & DUNNER,L.L.P., Customer No. 22,852
`Since the power does not appear in the original declaration, a copy ofthe powerin
`the prior application is enclosed.
`
`Please addressall correspondence to FINNEGAN, HENDERSON, FARABOW,
`GARRETT and DUNNER, L.L.P., Customer Number 22,852.
`Also enclosed are an Information Disclosure Statement, Form PTO/SB/08, and
`onecited reference.
`
`KhWwWWwWR®
`
`10.
`
`Ex. 1004, Page 5
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`Ex. 1004, Page 5
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`

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`Page 3 of 3
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`PETITION FOR EXTENSION.If any extension of time is necessary for the filing of this
`application, including any extension in parent Application No. 10/101,863, filed March 16, 2002,
`for the purpose of maintaining copendency betweenthe parent application and this application,
`and such extension has not otherwise been requested, such an extension is hereby requested, and
`the Commissioneris authorized to charge necessary fees for such an extension to our Deposit
`Account No. 06-0916. A duplicate copy of this paper is enclosed for use in charging the deposit
`account.
`
`FINNEGAN, HENDERSON, FARABOW,
`
` Dated: September 16, 2005
`
`By:
`
` ary ¥ Edwards
`Reg. No. 41,008
`
`FINNEGAN, HENDERSON, FARABOW,
`GARRETT & DUNNERL.L.P.
`901 New York Avenue, N.W.
`Washington, D.C. 20001-4413
`(650) 849-6622
`
`EXPRESS MAIL LABEL NO.
`EV 708643040 US
`
`Ex. 1004, Page 6
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`Ex. 1004, Page 6
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`M-12245 US
`852923 vl
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`Express Mail Label No.
`’ EL 941069152 US
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`Biased Pulse DC Reactive Sputtering ofOxide Films
`
`Hongmei Zhang
`Mukundan Narasimhan
`Ravi Mullapudi
`Richard E. Demaray
`Background
`
`1. Field of the Invention
`
`{0001] The present invention relates to deposition ofoxide and oxynitride films and, in
`particular, to deposition ofoxideand oxynitridefilms.by pulsed DC reactive sputtering.
`
`2. Discussion of Related Art
`
`Deposition ofinsulating materials and especially optical materialsis
`{0002}
`technologically important in several areas including productionof optical devices and production
`of semiconductordevices. In semiconductor devices, doped aluminasilicates can beutilized as
`high dielectric insulators.
`
`[0003] The increasing prevalence offiber optic communications systems has created an
`unprecedented demandfor devices for processingoptical signals. Planar devices such as optical
`waveguides, couplers, splitters, and amplifiers, fabricated on planar substrates, like those
`~ commonly used for integratedcircuits, and configured to receive and processsignals from
`optical fibersarehighly desirable. Such devices hold promise for integrated optical and
`electronic signal processing on a single semiconductor-like substance.
`0004] Thebasic design ofplanar optical waveguides and amplifiers is well known,:as
`described, for example, in U.S. Patent Nos.5,119,460 and 5,563,979 to Bruceet al., 5,6131995
`to Bhandarkar et al., 5,900,057 to Buchalet al., and 5,107,538 toBenton et al., to cite only a few.
`These devices, very generally, include a core region, typically bar shaped, of a certain refractive
`index surrounded by a cladding region of a lowerrefractive index. In the case of an optical
`amplifier, the core region includesa certain concentration of a dopant, typically a rare earth ion
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`such as an erbium or praseodymium ion which, when pumped bya laser, fluoresces, for
`example, in the 1550 nm and 1300 nm wavelength ranges used for optical communication,to
`amplify the optical signal passing through the core.
`
`[0005] As described, for examplein the patents by Bruceetal., Bhandarkar et al, and Buchalet
`al., planar optical devices may be fabricated by process sequencesincluding forming a layer of
`cladding material on a substrate; forming a layer of core material on the layer of cladding mater;
`patterning the core layer using a photolighotgraphic mask and an etching process to form a core
`ridge; and covering the core ridge with an upper cladding layer.
`[0006] The performance ofthese planar optical devices dependssensitively on the value and
`uniformity ofthe refractive index ofthe core region and of the cladding region, and particularly
`on the difference in refractive index, An, between the regions. Particularly for passive devices
`such as waveguides, couplers, and splitters, An should be carefully controlled, for example to
`values within about 1 %, and the refractive index ofboth core and cladding need to be highly
`uniform, for someapplicationsat the fewer than parts per thousandlevel. In the case ofdoped
`materials forming thecore region ofplanar optical amplifiers, it is important that the dopant be
`uniformly distributed so as to avoidnon-radiative quenchingorradiative quenching, for example
`by upconversion. Therefractive index and other desirable properties of the core and cladding
`regions, such as physical and chemical uniformity, low stress, and high density, depend, of
`course, on the choice ofmaterials for the devices and on the processes by whichthey are
`fabricated.
`
`
`
`
` aettgaiereedetaleail
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`[0007] Becauseoftheir optical properties,silica and refractory oxides such as.Al,O3, are good
`candidate materials for planar optical devices. Further, these oxides serve as suitable hosts for
`rare earth dopants used in opticalamplifiers. ‘A commonmaterial choice is so-called low _
`temperature glasses, doped with alkali metals, boron, or phosphorous, which have the advantage
`ofrequiring lower processing temperatures. In addition, dopants are used to modify the
`refractive index. Methods such as flame hydrolysis, ion exchangefor introducingalkali ions in ©
`glasses, sputtering, and various chemical vapor deposition processes (CVD) have been used to
`form films of doped glasses. However, dopants such as phosphorousand boron are hygroscopic,
`and alkalis are undesirable for integration with electronic devices. Control of uniformity of
`doping in CVD processescan be difficult and CVD deposited films can havestructural defects
`
`2.
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`[0008] Typically, RF sputtering has been utilized for deposition of oxide dielectric films. |
`However, RF:sputtering utilizes ceramic targets which are typically formed ofmultiple smaller
`tiles. Sincethe tiles can not be madevery large, there maybealarge problem of arcing between
`tiles and therefore contamination ofthe deposited film dueto this arcing. Further, the reactors
`required for RF sputtering tend to be rather complicated. In particular, the engineering oflow
`capacitance efficient RF power distribution to the cathodeis difficult in RF systems. Routing of
`low capacitance forward and return powerinto a vacuum vesselofthe reaction chamberoften
`exposes the powerpath in such away that diffuse plasmadischargeis allowed under some
`conditions of impedancetuningofthe matching networks.
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`leading to scattering losses whenusedto guidelight. In addition, doped low temperature glasses
`may require further processing after deposition. A method for eliminating bubbles in thin films
`of sodium-boro-silicate glass by high temperature sintering is described, for example, in the ‘995
`patent to Bhandarkaret al.
`
`[0009] Therefore, there is a need for new methods ofdepositing oxide and oxynitride films and
`for forming planar optical devices.
`
`Summary
`
`
`
`[0010] In accordance with the.present invention, a2 sputtering reactor apparatus for depositing
`oxide and oxynitride filmsis presented. Further, methods for depositing oxide and oxynitride
`films for optical waveguide devices are also presented. A sputtering reactor accordingto the
`present invention includes a pulsed DC powersupply coupled throughafilter to a target and a |
`substrate electrodecoupled to an RF power.supply. A substrate mounted on the substrate
`_ electrodeis therefore supplied with a bias from the RF power supply.
`[0011] The target can be a metallic target madeofa material to be deposited on the substrate. In
`some embodiments, the metallic target is formed from Al, Si and various rare-earth ions. A
`target with an erbium concentration, for example, can be utilized to deposit a film that can be
`formed into a waveguide optical amplifier.
`
`
`
`Aoneptaeelaetnasecnmsemenee
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`[0012] A substrate can beany material and, in some embodiments, is a silicon wafer. In some |
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`embodiments, RF powercan be suppliedto the wafer. In some embodiments, the wafer and the
`electrode can be separated by an insulating glass.
`
`[0013] In some embodiments, upto about 10 kW ofpulsed DC powerat a frequency ofbetween
`about 40 kHz and 350 kHzand a reverse pulse time ofup to about 5 pis is supplied to the target.
`The wafer can be biased with up to about several hundred watts ofRF power. The temperature
`ofthe substrate can be controlled to within about 10° C and can vary from about-50° C to
`several hundred degrees C. Process gasses can befed into the reaction chamberofthe reactor
`apparatus. In some embodiments, the process gasses can include combinations of Ar, Np, O2,
`C2Fs, COz, COand other processgasses.
`
`~ [0014] Several material properties ofthe deposited layer can be modified by adjusting the
`composition ofthe target, the composition and flow-rate ofthe process gasses, the power
`supplied to the target and the substrate, and the temperature ofthe substrate. For example, the
`index of refraction ofthe deposited layer depends on deposition parameters. Further, in some
`embodimentsstress can berelieved on the substrate by depositing a thin film ofmaterial on a
`back side of the wafer. Films deposited according to the presentirivention can beutilized to
`form optical waveguide devices such as multiplexers and rare-earth doped amplifiers.
`
`[0015] These and other embodiments, along with examples ofmaterial layers deposited
`accordingto the present invention, are further described below with respectto the following
`figures.
`
`Brief Description of the Figures
`
`[0016] Figures 1A and 1B show a pulsedDC sputtering reactor according to the present
`
`invention.
`
`[0017] Figure 2 shows a planar view of target utilized in a reactor as shownin Figures 1A and
`1B.
`:
`
`[0018] Figure 3 shows a cross-section view of an exampletarget utilized in a reactor as shown in
`Figures 1A and 1B.
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`[0019] Figure 4 showsa flow chart of an embodimentofa process for depositing a film on a
`substrate according to the present invention.
`
`[0020] Figure 5 showsa hysterises curve of target voltage versus oxygen flow rates for an
`example target in an embodimentofa reactor according to the present invention.
`
`{0021] Figure 6 shows a photo-luminescence andlifetimes of a film deposited in a process
`accordingto the present invention as a function of after deposition anneal temperature.
`
`[0022] Figure 7 shows the relationship between the index ofrefraction ofa film as a function of
`deposited oxide layers accordingto the present invention and due to oxide build-up on the target.
`[0023] Figure 8 showsa graphofthe index ofrefraction ofa film deposited according to the
`present invention as a function ofthe aluminum contentin a composite AJ/Sitarget.
`[0024] Figure 9 shows a graph oftypicalindices ofrefraction ofmaterial layers deposited
`according to the present invention.
`
`-
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`[0025] Figure 10 showsa table ofindices ofrefraction for a silica layer deposited according to
`the present invention as a function ofdifferent process parameters.
`[0026] Figure 11 showsthe refractive indices asa function ofO3/Ar ratio utilized in an Alumina
`. process according to the present invention.
`. [0027] Figure 12 shows the refractive indices as a function ofDC pulsed powerfrequency for an
`Aluminalayer deposited accordingto the presentinvention.
`
`[0028] Figure 13 showsvariation in therefractive index over time during repeated depositions
`froma single target.
`
`
`
` netanaeabaneenternenineteenSieteNe.semestgemtnimiet
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`
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`[0029] Figure 14 showsvariation in refractive index overtimefor repeated depositions from a
`target of another material layer according to the present invention.
`
`[0030] Figure 15 showsthe variation refractive index overtime for repeated depositions from a
`target of another material layer according to the present invention.
`
`[0031] Figure 16A through 16D shows a TEM film deposited accordingto the present invention.
`
`—
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`process. [0037] Figures 23 through 25 through illustrate adjustment ofprocess parameters in orderto
`
`
`[0040] Figure 28 shows up-conversion constants, andlifetimesofthe active core layer ofFigure
`27 deposited according to the presentinvention.
`
`[0041] Figure 29 shows drift in the index ofrefraction with subsequent depositions for films
`deposited from a target according to thepresent invention. |
`[0042] Figure 30 showsdriftinthephotoluminescence withSubsequentdepositions accordingto
`the present invention.
`[0043] Figure 31 showsdrift in the excited state lifetime with subsequent depositions according
`to the present invention.
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`[0044] Figure 32 showsstabilization ofthe index ofrefraction in subsequent depositions.
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`| [0045] Figure 33 showsthe index ofrefraction of a film formed fromapuresilicon target as a
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`[0032] Figure 17 showsthe transparency ofa film deposited accordingto the present invention.
`[0033] Figure 18 shows anuppercladding layer deposited according to the presentinvention
`over a multiple-waveguide structure such that the deposited layer is substantially planarized.
`
`[0034] Figure 19 illustrates the deposition of a film over a waveguide structure.
`[0035] Figures 20 and 21illustrate different etch and deposition rates for deposition offilmsas a
`function ofthe surface angle ofthe film.
`
`[0036] Figure 22 illustrates calculation ofthe planarization time for a particular deposition
`
`achieve planarization ofa film deposited over a waveguide structure according to the present
`invention.
`
`[0038] Figure 26 showsthe gain characteristics of an erbium dopedwaveguide amplifier formed
`offilms depositions accordingto the present invention.
`
`[0039] Figures 27 showsgain,insertion loss of a waveguide with an active core deposited
`according to the present invention.
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`function of the ratio of O2/N;in the process gas.
`
`- [0046] In the figures, elements having the same designation have the sameorsimilar function.
`
`Detailed Description |
`
`[0047] Reactive DE magnetron sputtering ofnitrides and carbidesis a widely practiced
`technique,butthe reactive dc magnetron sputtering ofnonconducting oxides is done rarely.
`Films such as aluminum oxide arealmost impossible to deposit by conventional reactive DC
`magnetron sputtering dueto rapidformation ofinsulating oxide layers on thetarget surface. The
`insulating surfaces charges up and result in arcing during process. This arcing can damage the
`powersupply, produce particles and degrade the properties ofdeposited oxide films.
`
`[0048] RF sputtering ofoxide filmsis discussed in Application Serial No. 09/903,050(the “050
`application) by Demarayet.al., entitled “PlanarOptical Devices and Methodsfor Their
`Manufacture,” assigned to the same assigneeas is the present invention, herein incorporated by
`referencein its entirety. Further, targets that can be utilized in a reactor according to the present
`invention are discussed in U.S. Application serial no. {Attorney Docket No. M-12247 US} (the
`247 application), filed concurrently withthe present disclosure, assigned to the same assignee as
`is the present invention, herein incorporated by reference in its entirety. A gain-flattened
`amplifier formed offilms deposited accordingto the present invention are described in U.S.
`Applicationserial no. {Attorney Docket No. M-12652 US}(the ‘652 application),filed
`concurrently with the present disclosure, assigned to the same assignee as is the present
`invention, herein incorporated byreferenceinits entirety. Further, a modesize converter formed
`with films deposited according to the present inventionis described in U.S. Application serial no.
`{Attorney Docket No. M-12138 US}(the‘138 application), filed concurrently with the present
`disclosure, assigned to the same assignee as is the present invention, herein incorporated by |
`referencein its entirety.
`
`[0049] Figure 1A shows a schematic of a reactor apparatus 10 for sputtering ofmaterial from a
`target 12 accordingto the present invention. In some embodiments, apparatus 10 may, for
`
`a
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`Ex. 1004, Page 13
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`example, be adapted from an AKT-1 600 PVD (400 X 500 mm substrate size) system from
`Applied Komatsu or an AKT-4300 (600 X 720 mm substrate size) system from Applied
`Komatsu, Santa Clara, CA. The AKT-1600 reactor, for example, has three deposition chambers _
`connected by a vacuum transport chamber. These Komatsu reactors can be modified suchthat
`pulsed DC power is supplied tothe target and RF poweris supplied to the substrate during
`deposition of a material film.
`
`[0050] Apparatus 10 includes a target 12 which is electrically coupled throughafilter 15 toa
`pulsed DC powersupply 14. In some embodiments,target 12 is a wide area sputter source
`target, which provides material to be deposited on substrate 16. Substrate 16 is positioned
`parallel to and opposite target 12. Target 12 functions as a cathode when poweris applied to it
`_ and is equivalently termed a cathode. Application ofpowerto target 12 creates a plasma 53.
`Substrate 16 is capacitively coupled to an electrode 17 through an insulator 54. Electrode 17 can
`be coupled to an RF powersupply 18. Magnet 20 is scanned acrossthe top oftarget 12.
`
`iitt}i };t
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`[0051] For pulsed reactive dc magnetron sputtering, as performed by apparatus 10, the polarity
`of the powersupplied to target 12 by power supply 14 oscillates between negative and positive
`potentials. During the positive period, the insulating layer on the surfaceof target 12 is
`discharged and arcing is prevented. To obtain arc free deposition, the pulsing frequency exceeds
`a critical frequency that depend ontarget material, cathode current and reverse time. High
`quality oxide films can be made using reactive pulse DC magnetron sputtering in apparatus 10.
`
`[0052] Pulsed DC powersupply 14 can be any pulsed DC powersupply, for example an AE
`Pinnacle plus 10K by AdvancedEnergy, Inc. With this example supply, up to 10 kW ofpulsed
`DC powercan besupplied at a frequency ofbetween 0 and 350 KHz. The reversevoltage is
`10% ofthe negative target voltage. Utilization ofother powersupplies will lead to different
`power characteristics, frequency characteristics and reverse voltage percentages. The reverse
`time on this embodimentofpower supply 14 can be adjusted between 0 and 5 ps.
`
`[0053] Filter 15 prevents the bias power from power supply 18 from coupling into pulsed DC
`powersupply 14. In some embodiments, powersupply 18 is a2 MHz RF powersupply,for
`example can be a Nova-25 power supply made by ENI, Colorado Springs,Co.
`
`[0054] Therefore,filter 15 is a 2 MHz band rejectionfilter. In some embodiments,the band
`
`8
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`width ofthe filter can be approximately 100 kHz. Filter 15,therefore, prevents the 2 MHz
`powerfrom the bias to substrate 16 from damaging power supply 18.
`. [0055] However, both RF and pulsed DC deposited filmsare not fully dense and most likely
`have columnar structures. These columnarstructures are detrimental for optical wave guide
`applications dueto the scattering loss caused by the structure. By applying a RF bias on wafer
`16 during deposition,the deposited film can be dandifiedby cnergetic ion bombardmentand the
`columnar structure canbe Substantially eliminated.
`[0056] In the AKT-1600 based system, for example, target 12 can have an active size ofabout
`675.70 X 582.48 by 4 mm in orderto deposit films on substrate 16 that have dimension about
`400 X 500 mm. The temperature ofsubstrate 16 can be held at between —50C and 500C. The
`distance between target 12 and substrate 16 can be between about3 and about 9 cm, Processgas
`can be inserted into the chamberof apparatus 10 at a rateup to about 200 sccm while the
`pressure in the chamberof apparatus 10 can be held at between about .7 and 6 millitorr. Magnet
`20 provides amagnetic field ofstrength between about 400 and about 600 Gaussdirectedin the
`plane oftarget 12 and is moved Actos target 12 at a rate ofless than about 20-30 sec/scan. In
`someembodiments utilizingtheAKT 1600 reactor, magnet20 can be a race-track shaped
`magnet with dimension about 150 mm by 600 mm.
`
`[0057] A top down view ofmagnet 20 and wide area target 12 is shown in Figure 2. A film
`deposited on a substrate positioned on carrier sheet 17 directly opposedto region 52 oftarget 12 |
`has good thickness uniformity. Region 52is the region shownin Figure 1B that is exposed to a
`uniform plasma condition. In some implementations, carrier 17 can be coextensive with region
`52. Region 24 shown in Figure 2 indicates the areabelow which both physically and chemically
`uniform deposition can be achieved, where physical and chemical uniformity provide refractive
`index uniformity, for example. Figure 2 indicates that region 52 oftarget 12 that provides
`thickness uniformity is, in general, largerthan region 24 oftarget 12 providing thickness and
`_- chemical uniformity. In optimized processes, however, regions 52 and 24 may be coextensive.
`
`myae...uerereLanereoeseeenaetienea
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`[0058] In some embodiments, magnet20 extends beyond area 52 in onedirection, the Y
`direction in Figure 2, so that scanningis necessary in only one direction, the X direction, to
`provide a time averaged uniform magnetic field. As shown in Figures 1A and 1B, magnet 20
`can be scannedoverthe entire extent oftarget 12, whichis larger than region 52 ofuniform
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`sputter erosion. Magnet 20 is movedin a planeparallel to the plane of target 12.
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`{0059} The combination of a uniform target 12 with a target area 52 larger than the area of
`substrate 16 can provide films of highly uniform thickness. Further, the material properties of
`the film deposited canbe highly uniform. The conditions of sputtering at the target surface, such
`as the uniformity of erosion, the average temperature of the plasmaat the target surface and the
`equilibration of the target surface with the gas phase ambientofthe process are-uniform over a
`region whichis greater than or equalto the region to be coated with a uniform film thickness. In
`addition, the region ofuniform film thicknessis greater than or equalto the region ofthe film
`whichis to have highly uniform optical properties such as index ofrefraction, density,
`transmission or absorptivity:
`
`[0060] Target 12 can be formed of any materials, but is typically metallic materials suchas, for
`example, combinations ofAland Si. Therefore, in some embodiments,target 12 includes a
`metallic target material formed from intermetalic compoundsofoptical elements such as Si, Al,
`Er and Yb. Additionally, target 12 can be formed, for example, frommaterials such as La, Yt,
`Ag, Au, and Eu. To form optically active films on substrate 16, target 12 can include rare-earth
`ions.
`In some embodimentsoftarget 12 with rare earth ions, the rare earth ions can be.pre-
`alloyed with the metallic host components to form intermetalics. See the ‘247 application.
`
`[0061] In several embodimentsofthe invention, material tiles are formed. Thesetiles can be
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`mounted on a backingplate to formatarget for apparatus 10. Figure 3A shows an embodiment
`of target 12 formed with individual tiles 30 mounted on a cooled backplate 25. In order to form
`a widearea target of an alloy target material, the consolidated material of individualtiles 30
`- shouldfirst be uniform to the grain size-of the powder from whichit is formed.It alsoshould be
`formed intoastructural material capable of forming andfinishingto a tile shape having a surface
`roughnesson the order ofthe powdersize from whichit is consolidated. A wide area sputter
`cathode target can be formed from a close packed array of smallertiles. Target 12, therefore,
`may include any numberoftiles 30, for example between 2 to 20 individualtiles 30. Tiles 30are
`finished to asize so as to provide a margin ofnon-contact,tile to tile, 29 in Figure 3A, less than
`about 0.010” to about 0.020”or less than half a millimeter so as to eliminate plasma processes
`between adjacent ones oftiles 30. The distance between tiles 30 oftarget 12 and the dark space
`anode or ground shield 19, in Figure 1B can be somewhat larger so as to provide non contact
`assembly or provide for thermal expansion tolerance during process chamber conditioning or
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`operation.
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`[0062] Several useful examplesof target 12 that can beutilized in apparatus 10 according to the
`present invention include the following targets compositions: (Si/AVEr/Yb) being about
`(57.0/41.4/0.8/0.8), (48.9/49/1.6/0.5), (92/8/0/0), (60/40/0/0), (50/50/0/0), (65/35/0/0),
`(70/30/0,0), and (50,48.5/1.5/0) cat. %, to list onlya few. These targets canbereferred to as the
`0.8/0.8target, the 1.6/.5 target, the 92-8 target, the 60-40 target, the 50-50 target;the 65-35.
`target, the 70-30 target, and the 1.5/0 target, respectively. The 0.8/0.8, 1.6/0.5, and 1.5/0 targets
`can be madebypre-alloyed targets formed from an atomization andhot-isostatic pressing _
`(HIPing) process as described in the ‘247 application. The remaining targets can be formed, for -
`example, by HIPing. Targets formed from Si, Al, Er and Yb can have any composition. In some
`embodiments, the rare earth content can be up to 10 cat. % ofthetotal ion content in thetarget.
`Rare earth ions are added to form active layers for amplification. Targets utilized in apparatus
`10 can have any composition and can include ions other than Si, Al, Er and Yb, including: Zn,
`Ga, Ge, P, As, Sn, Sb, Pb, Ag, Au, and rare earths: Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy#Ho,Ex,
`Tm Yb and Lu.
`
`[0063] Optically useful materials to be deposited onto substrate 16 include oxides, fluorides,
`sulfides, nitrides, phosphates, sulfates, and carbonates, as well as other wide band gap
`semiconductor materials. To achieve uniform deposition, target 12, itself can be chemically
`uniform and of uniform thickness over an extended area.
`
`[0064] Target 12 can be a composite target fabricated from individualtiles, precisely bonded
`together on a backing plate with minimal separation, as is discussed further with respect to
`Figure 3. Insome embodiments, the mixed intermetalllics can be plasma sprayed directly onto a:
`backing plate to form target 12. The complete target assembly can also includes structures for
`cooling the target, embodiments ofwhich have been described in U.S. Patent No. 5,565,071 to
`Demarayetal, and incorporated herein by reference.
`[0065] Substrate 16 can be a solid, smooth surface. Typically, substrate 16 can be a silicon
`waferora silicon wafercoated with a layer of silicon oxide formed by a chemical vapor
`deposition process orby a thermal oxidation process. Alternatively, substrate 16 can be a glass,
`such as. Coming 1737 (CorningInc., Elmira, NY), a glass-like material, quartz, a metal, a metal
`oxide, or a plastic material. Substrate 16 can be supportedon a holderor carrier sheet that may
`-Il-
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`be larger than substrate 16. Substrate 16 can beelectrically biased by power supply 18.
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`[0066] In some embodiments, the area ofwide area target12can be greater than the area on the |
`carrier sheet on which physically and chemically uniform deposition is accomplished: Secondly,
`in some embodimentsa central regionon target 12, overlying substrate 16, can be provided with
`a very uniform condition of sputter erosion of the target material. Uniform target erosion is a
`consequence of a uniform plasmacondition. In the following d