`
`
`
`
`
`
`
`
`(12) United States Patent
`US 7,173,281 B2
`(10) Patent No.:
`
`
`
`
`
`
`
`Hirakata et al.
`(45) Date of Patent:
`*Feb. 6, 2007
`
`
`
`
`USOO7173281B2
`
`
`
`
`
`
`
`(54) SEMICONDUCTOR DEVICE AND METHOD
`OF FABRICATING THE SAME
`
`
`
`
`
`
`
`(75)
`
`
`
`
`
`
`
`
`Inventors: Yoshiharu Hirakata, Kanagawa (JP);
`
`
`
`
`
`Yuugo Goto, Kanagawa (JP); Yuko
`
`
`
`
`Kobayashi, Kanagawa (JP); Shunpei
`
`
`
`Yamazaki, Tokyo (JP)
`
`
`
`
`(73) Assignee: Semiconductor Energy Laboratory
`
`
`
`
`Co., Ltd., Kanagawa-ken (JP)
`
`
`
`
`( * ) Notice:
`
`
`
`
`
`
`
`
`
`Subject to any disclaimer, the term of this
`
`
`
`
`patent is extended or adjusted under 35
`
`
`
`U.S.C. 154(b) by 0 days.
`
`
`
`
`This patent is subject to a terminal dis-
`claimer.
`
`
`
`
`EP
`
`
`
`
`
`
`
`
`(58) Field of Classification Search .................. 257/57,
`
`
`
`
`257/59, 72, 83, 257, 290, 347, 351, 36
`
`
`
`
`
`
`
`See application file for complete search history.
`
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`
`
`(56)
`
`
`
`
`
`
`
`
`4,555,746 A
`
`
`11/1985 Mochizuki et a1.
`
`
`
`
`
`
`(Continued)
`FOREIGN PATENT DOCUMENTS
`
`
`0 604 006
`6/1994
`
`
`
`
`
`
`
`
`
`
`
`(Continued)
`OTHER PUBLICATIONS
`
`
`
`
`
`
`
`(21) Appl. No.: 10/692,759
`
`
`
`(22)
`
`
`
`Filed:
`
`
`
`
`
`Oct. 27, 2003
`
`
`
`(65)
`
`
`
`
`
`
`Prior Publication Data
`
`
`
`
`US 2004/0084673 A1
`May 6, 2004
`
`
`
`
`
`Related US. Application Data
`
`
`
`
`
`
`(62) Division of application No. 09/606,414, filed on Jun.
`
`
`
`
`
`
`29, 2000, now Pat. No. 6,638,781.
`
`
`
`(30)
`
`
`
`
`Jul. 6, 1999
`
`
`
`
`
`Foreign Application Priority Data
`
`
`
`
`(JP)
`................................. 11-191102
`
`(51)
`
`
`
`
`
`Int. Cl.
`
`
`H01L 29/04
`
`(2006.01)
`
`
`
`
`
`
`
`
`
`Furue et a1., “Characteristics and Driving Scheme of Polymer-
`
`
`
`
`
`
`
`Stablized Monostable FLCD Exhibiting Fast Response Time and
`
`
`
`
`
`
`
`High Contrast Ratio with Gray-Scale Capability”, SID 98 DIGEST,
`
`
`pp. 782-785.
`
`
`
`
`
`
`(Continued)
`
`
`
`
`Primary Examiner7Wai-Sing Louie
`
`
`
`
`
`
`(74) Attorney, Agent, or FirmiNixon Peabody LLP
`
`
`
`(57)
`
`
`
`ABSTRACT
`
`
`
`
`
`
`
`
`
`
`
`There is provided a high quality liquid crystal panel having
`
`
`
`
`
`
`
`
`a thickness with high accuracy, which is designed, without
`
`
`
`
`
`
`
`using a particulate spacer, within a free range in accordance
`
`
`
`
`
`
`
`
`with characteristics of a used liquid crystal and a driving
`
`
`
`
`
`
`
`method, and is also provided a method of fabricating the
`
`
`
`
`
`
`
`
`same. The shape of a spacer for keeping a substrate interval
`
`
`
`
`
`
`
`
`constant is made such that it is a columnar shape, a radius
`
`
`
`
`
`
`R ofcurvature is 2 pm or less, a height H is 0.5 um to 10 pm,
`
`
`
`
`
`
`
`
`
`a diameter is 20 um or less, and an angle (X is 65° to 115°.
`
`
`
`
`
`
`
`
`By doing so, it is possible to prevent the lowering of an
`
`
`
`
`
`
`
`
`
`opening rate and the lowering of light
`leakage due to
`orientation disturbance.
`
`
`
`
`
`(52) US. Cl.
`
`
`
`
`
`............................ 257/72; 257/57; 257/59;
`
`
`
`
`257/83; 257/257; 257/290; 257/351; 257/368
`
`
`
`
`
`
`
`124 Claims, 25 Drawing Sheets
`
`
`
`
`
`
`
`Page 1 of51
`
`Tianma Exhibit 1007
`
`Page 1 of 51
`
`Tianma Exhibit 1007
`
`

`

`
`
`
`US 7,173,281 B2
`
`
`Page 2
`
`
`
`US. PATENT DOCUMENTS
`
`
`
`4775225 A
`
`4,874,461 A
`
`4,899,137 A
`
`5,062,198 A
`
`5308998 A
`
`5,337,171 A
`
`
`5,379,139 A
`
`
`
`10/1988 Tsuboyama et al~
`
`
`10/1989 Sato et al~
`
`
`
`2/ 1990 Behrens et al~
`
`
`11/ 1991 Sun
`
`
`5/ 1994 Yamazaki et al~
`
`
`
`8/1994 Mase et a1.
`
`
`
`
`
`
`
`1/1995 Sato et al.
`
`
`
`
`
`
`5,499,128 A
`
`
`
`3/1996 Hasegawa et al.
`
`
`
`
`.......... 349/155
`
`
`
`
`5,594,569 A
`
`
`
`1/1997 Konuma et al.
`
`
`
`
`5,608,232 A
`
`
`
`
`3/1997 Yamazaki et a1.
`
`
`
`
`6,888,608 B2
`6,909,115 B2
`
`2001/0051398 A1
`
`2002/0013019 A1
`
`
`2002/0163457 A1
`
`2003/0057419 A1
`
`2004/0084673 A1
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`5/2005 Miyazaki et 31.
`6/2005 Kokubo et a1.
`
`
`
`12/2001 Hirakata et a1.
`
`
`
`1/2002 Ohtani et a1.
`
`
`
`11/2002 Azami et a1.
`
`
`
`3/2003 Murakami et a1.
`
`
`5/2004 Hirakata et a1.
`
`
`
`
`
`
`
`
`FOREIGN PATENT DOCUMENTS
`
`
`
`EP
`
`
`
`EP
`
`
`
`JP
`
`
`
`JP
`
`
`
`JP
`
`
`
`JP
`JP
`
`
`
`
`JP
`
`
`
`JP
`
`
`
`
`
`0 984 492
`
`
`
`
`3/2000
`
`
`
`
`
`1 041 622
`
`
`
`
`10/2000
`
`
`
`63-050817
`
`
`
`
`3/1988
`
`
`
`6-59228
`
`6-244104
`
`7-130652
`07-321339
`
`
`
`
`
`
`
`
`08-008181
`
`
`
`8-248427
`
`
`
`
`3/1994
`
`
`
`
`9/1994
`
`
`
`
`5/1995
`12/1995
`
`
`
`
`
`1/1996
`
`
`
`
`9/1996
`
`
`
`
`5,643,826 A
`
`
`5,680,189 A
`
`
`5,696,003 A
`
`5,739,882 A
`
`
`5,777,713 A
`
`
`5,815,226 A
`
`
`
`
`7/1997 Ohtani et a1.
`
`
`
`
`
`
`10/1997 Shimizu et a1.
`
`
`
`
`12/1997 Vlakita et a1.
`
`
`
`4/1998 Shimizu et a1.
`
`
`
`
`
`
`
`
`
`
`7/1998 Kimura
`
`
`
`
`9/1998 Yamazaki et a1.
`
`
`
`
`5,824,573 A
`
`
`
`10/1998 Zhang et a1.
`
`
`
`
`5,843,225 A
`
`
`
`12/1998 Takayama et a1.
`
`
`
`5,879,977 A
`
`
`5,915,174 A
`
`3/1999 Zhang et a1.
`
`
`
`6/1999 Yamazaki et a1.
`
`
`
`
`5,923,962 A
`
`
`
`
`7/1999 Ohtani et a1.
`
`
`
`
`5,952,676 A
`
`
`
`
`9/1999 Sato et a1.
`
`
`
`
`5,978,061 A
`
`
`
`11/1999 Miyazaki et a1.
`
`
`
`
`5,986,729 A
`
`
`
`
`11/1999 Yamanaka et a1.
`
`
`
`
`6,016,181 A
`
`6,088,070 A
`
`
`
`
`1/2000 Shimada ..................... 349/156
`
`
`
`7/2000 Ohtani et a1.
`
`
`
`
`
`
`
`
`
`
`
`
`9/2000 Yamazak1 et a1.
`6,118,506 A
`
`
`
`
`11/2000 Fujimura et al.
`6,151,092 A
`
`
`
`
`12/2000 Funai et a1.
`6,162,667 A
`
`
`
`12/2000 Nakamura
`6’163’357 A
`
`
`
`12/2000 Takano et 31'
`6’165’824 A
`
`
`
`
`5/2001 Zhang
`6,225,645 B1
`
`
`
`
`5/2001 Foschaar et al.
`6’236’445 B1
`
`
`
`
`
`
`5/2001 Shohara et al.
`6’238’754 B1
`
`
`
`$32001 Tim“?
`1
`6’275’061 B1
`
`
`
`
`33881 311ng et a '
`2,332,327 :1
`
`
`
`
`
`
`9/2001 UmJeda
`6,286,3 59 B1
`
`
`
`
`
`9/2001 Mashiko et a1
`6,288,766 B1
`'
`’
`’
`.
`
`
`
`
`
`
`
`
`11/2001 Ohtan1 et a1.
`6,313,481 B1
`1/2002 Ohtani et a1.
`6,335,541 B1
`
`
`
`
`
`
`
`
`
`
`
`3/2002 Ando et al.
`6,356,330 B1
`
`
`
`
`3588; EighdZma et al
`g’ifi’ggg E?
`
`
`
`'
`.y
`’
`’
`
`
`
`
`
`”002 Azf‘m‘ e? 31'
`6,420,988 Bl
`
`
`
`
`
`9/2002 M1yazak1-et al.
`6’445’437 B1
`
`
`
`
`
`4/2003 Yamazaki
`6’555’420 B1
`
`
`
`
`”003 szakl et 31'
`6’576’926 B1
`6,638,781 B1 * 10/2003 H1rakata et a1.
`
`
`
`
`
`
`
`
`
`
`6,680,487 B1
`1/2004 Kokubo et al.
`
`
`
`.............. 438/30
`
`
`
`
`JP
`
`
`
`JP
`
`
`
`JP
`JP
`
`
`
`JP
`
`
`
`JP
`
`
`
`JP
`
`
`
`JP
`
`
`
`JP
`JP
`
`
`
`
`
`
`JP
`
`9-120062
`
`9_197413
`
`10-96955
`10_153797
`
`10-228022
`
`
`
`
`
`
`
`
`
`
`5/1997
`
`
`
`7/1997
`
`
`
`4/1998
`
`6/1998
`
`
`
`
`8/1998
`
`
`
`10-268316
`
`
`
`
`10/1998
`
`
`
`10-319440
`
`10-339889
`
`11_95194
`11-095261
`
`11-133463
`
`
`
`
`
`
`
`
`
`
`12/1998
`
`12/1998
`
`4/1999
`4/1999
`
`
`
`
`
`
`
`
`
`5/1999
`
`
`
`
`
`
`OTHER PUBLICATIONS
`
`
`
`
`
`
`
`Yoshida et al., “A Full-Color Thresholdless Antiferroelectric LCD
`
`
`
`
`
`
`
`
`
`Exhibiting Wide Viewing Angle with Fast Response Time”, SID 97
`
`
`DIGEST, pp. 841-844.
`
`
`
`
`
`
`US. Appl. No. 09/570,223isatoshi Murakami, “Capacitor, Semi-
`
`
`
`
`
`
`conductor Device and Manufacturing Method Thereof”.
`
`
`
`
`
`
`
`
`H. Ohtani et al., “LP-B: Late-News Poster: A 60-in. HDTV Rear-
`
`
`
`
`
`Projector withIContinuous-Grain-Silicon Technology”, Society-for
`
`
`
`
`
`Information Display Internatlonal Syrnpos1um Digest of Techn1cal
`
`
`
`
`
`
`
`Papers’ VOL XXIX’ May 1998’ pp' 467'470'
`European Search Report for Application No. 00110377.9-1528/;
`
`
`
`
`
`
`
`
`
`
`Dated: Oct. 15 2004
`'
`’
`.
`.
`.
`
`
`
`
`
`gzzgegnlgsiirclzlolggport for App11cat10n No. 00109971.2-2203-,
`
`
`
`
`
`
`Ryuichi Shimokawa et al.; “Characteristics of High-Efficiency
`
`
`
`
`
`
`
`
`Cast-Si Solar Cell Wafers by MBIC Measurement”; Japanese Jour-
`
`
`
`
`
`
`
`
`
`
`nal of Applied Physics, vol. 27, No. 5, May 1998, pp. 751-758.
`
`
`
`
`
`
`
`
`Shiroh Inui, et al. “Thresholdless Antiferroelectricity in Liquid
`
`
`
`
`
`
`
`
`
`Crystals and its Application to Displays”; Journal of Materials
`
`
`
`
`
`
`
`Chemistry, vol. 6, No. 4, 1996, pp. 671-673.
`
`
`
`* cited by examiner
`
`
`
`
`
`
`
`
`
`Page 2 of51
`
`Page 2 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb.6,2007
`
`
`
`
`
`Sheetl,of25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`
`
`KaB
`3.
`
`
`
`.X.
`
`
`
`1 B .(3}Im
`
`
`B1
`
`
`
`
`..kB
`
`
`
`Page 3 0f51
`
`
`Fig. 1A
`
`
`
`
`Fig. 18
`
`Page 3 of 51
`
`
`

`

`
`U S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 2 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`
`Fig. 2A
`
`
`
`Fig. 20
`
`
`
`Page 4 of51
`
`Page 4 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 3 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`
`
`304
`
`E
`
`305
`306
`306
`—_
`—
`l
`.—
`HIM-WI.”
`Fig. 3D -—-—————
`
`T___________T
`
`
`
`
`
`
`
`
`
`W
`
`
`
`Fig. 3E "'_"'w""
`
`Page 5 0f51
`
`Page 5 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 4 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`Fig. 4
`
`
`first substrate
`
`
`
`
`
`
`forming TFTs
`
`
`
`
`
`
`
`
`
`forming an alignment fiim
`
`
`
`
`
`rubbing process
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`second substrate
`
`
`
`
`
`forming an alignment film
`
`
`
`
`rubbing process
`
`
`
`
`forming spacers
`
`
`
`
`
`forming a sealing member
`
`
`
`
`bonding substrates
`
`
`
`
`cutting substrates
`
`
`
`
`
`injecting liquid crystal
`
`
`
`
`
`sealing an injection port
`
`
`
`
`re—alignment process
`
`
`
`Page 6 0f51
`
`Page 6 of 51
`
`

`

`U.S. Patent
`
`Feb.6,2007
`
`Sheet5 0f25
`
`US 7,173,281 B2
`
`7’5Iaa'.742I
`|Il|l|
`
`Page 7 0f51
`
`Page 7 of 51
`
`
`

`

`S”U
`
`m
`
`b.R
`
`026.,
`
`.m
`
`52
`
`US 7,173,281 B2
`
`6cm.9”.W""li‘!r’f‘+++++Bragg32-:+++++m8.9“.
`I.‘I
`
`7%71IEW/m
`
`
`
`
`
`wit.ill.iiniiiiiin.$154.2..iiit33lix‘JwiizciuIssiiiiuliziiinssguu.‘~\V-§t:tinnitiiialsrm“--§
`‘mm9”.
`
`mo.9;
`
`“a.9“.
`
`'4'"IEi’5
`
`
`
`wFm.m<09“.P"Flair/fl;ir/l/A
`
`Page 8 0f51
`
`Page 8 of 51
`
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb.6,2007
`
`
`
`
`Sheet7 0f25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`
`
`
`
` .
`
`ZI‘IIVAllzg/fl]AJ/.
`
`ZZZZZZZ¢
`
`;7’/(A21
`
`
`
`
`
`
`
`*++++gaga?+++++
`
`
`
`
`
`
`
`
`
`
`
`Page 9 0f51
`
`Page 9 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 8 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`‘
`
`IrI.
`
`
`
`
`///'I'%E:yl//]///Z'Z//
`
`”a?A
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 10 ofSl
`
`
`\\\\\\\\\\\\\V\\N..§\\\iigiiiiiiiiigliifiia!
`
`'..L\\\\\\\\\\\\\\\V_\IJ\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\.1..\
`
`
`
`
`
`
`
`
`\\\\\\\\\\\\\\\\\\\\\\§\\\\\\\\§\\\\\\\\V\\\\\\\\\\\§§§§\\\\
`
`{‘3
`
`4“:“d\\\\;\\v\\\
`no“wno“.
`
`
`
`cofioa.oxE
`
`
`
`gauge.525
`
`
`
`
`
`._|._._.3:55.:.35
`
`
`
`
`
`
`
`Eh.0229:52r.».255-..”NE.E....855...:2
`
`
`w—mowwvwo2.0umm—Qhwmmww
`
`05N5wooImmoomoovownowmewnew50Now
`
`
`
`
`
`n/d/77/T77x,
`
`
`
`mm.9“.
`
`‘\\\\‘v
`«son.3..§wx\o“.
`\ow».W“¢.VH‘
`
`\ "
`
`\V
`\
`to}:
`
`‘H
`EN
`
`Page 10 of 51
`
`
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 9 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`611a
`
`6128
`
`
`
`
`
`
`Fig. 9
`
`
`612b
`
`
`
`
`‘YJ
`
`
`
`
`
`
`609
`611
`608
`7612
`610
`
`¥_____—_—E——————4
`
`
`
`703: n-channel TFI'
`
`QSAZZVJ’J'JF’L'a911".
`
`
`
`
`
`
`Fig. 10
`
`
`
`
`
`
`801
`
`Page 11 of51
`
`Page 11 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 10 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`Fig. 11
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`901: Source side driver circuit
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`909 910
`908
`
`
`
`
`r"
`o. g)
`g 2
`
`
`
`
`g!
`to
`a. m
`:3
`D- C)
`
`
`
`
`
`
`to
`:0 cu
`< ..
`m
`_ :3
`< e-v
`:3- a)
`q
`
`
`
`
`“ a:
`‘9. E Q
`Q G
`
`
`
`
`
`
`
`
`
`
`.
`.
`_
`Q. a;
`:8:
`a:
`n
`:3 en
`
`O (D
`‘3
`fi
`—|
`"*
`m
`=-.-
`906. Pixel portion
`_. a
`*
`
`
`
`
`
`'i
`O
`o m
`c
`
`
`n
`..
`c
`
`
`
`—-
`..
`e.
`—-
`=.
`
`
`I:
`..-.
`"
`'s
`a
`5
`=‘
`C
`_.
`
`
`
`
`
`
`V
`:c
`"'
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 12 of51
`
`9
`
`
`
`
`
`912: Pre—charge circuit
`
`
`
`Page 12 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb.6,2007
`
`
`
`
`
`Sheetll of25
`
`
`
`US 7,173,281 B2
`
`
`
`
`Fig. 12
`
`
`
`y
`Aflw
`//
`
`Vr/AI/A///////////Z
`WIWV
`
`
`
`/7I35://
`%x
`////A//////////////////
`//
`é?§%%§%§fi%
`.ahwW,
`//.,///
`
`/u,
`
`I,
`
`V\
`
`\w,/
`
`.
`
`Afiwfl¢1”
`/
`l//////
`
`yr
`
`V//
`
`//////AI///////////////éA
`
`//
`///////////////////////////////////////////////
`IllyllllI1"I’1flIll.tItIIIIIIIIIIIIIIIII'IIII’
`I
`'n'”""”nu :3
`
`%
`
`
`
`7///////V//////A//////,
`
`film-Kla-V
`
`‘
`
`A
`
`/////
`4/4,
`/////
`
`//Ar///////Ar//A/A7///////////.7//A/é/Ar/A//A///A///////
`
`.AIIZIZMZIZIHIZIZIZIZIZIZ‘.
`
`/////A///A///A///////Ar//////////////////////
`
`////////
`W///M//¢¢x//////
`///A//////
`‘IIIIIIIZI/2747534A
`
`
`
`
`‘Q
`r
`\ ”mull'nlnul'll m
`any:111:111111'14alala¢lpalltllrtlmuurrut
`~\
`/
`
`
`WWW/
`\\
`
`“Q‘J’
`//7
`b
`.b
`O
`97/
`3’\/
`l/////////////
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 13 ofSl
`
`Page 13 of 51
`
`
`
`
`
`
`
`

`

`
`
`
`
`t
`
`w
`
`
`2
`
`
`
`teehS
`
`
`f02
`
`
`
`US 7,173,281 B2
`
`m‘...mg.
`
`Nn‘
`
`_V:5w
`
`p.mS..82
`
`
`
`
`
`
`
`
`
`
`
`
`_-__
`
`r0,.
`.<99“.
`
`FumooF
`
`
`
`Fom
`
`7u"woo—0-0_
`
`._u_
`
`1*oo—
`
`
`
`
`
`
`
`%r‘iIVA2Iay/M/I]%
`
`
`
`2.a?
`
`
`5,gazwzzdWAZA’Z?’E2”..1i
`
`“mmmm/1w.,gflfivgflfldfidflflrfgfi
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 14 of51
`
`.8an35¢
`
`___
`
`
`
`«.226.025
`
`m2.9“.
`
`
`
`Etmccmfie62mEtwccmco...”85Etoccgoémfi#:5520555
`
`
`
`
`
`Page 14 of 51
`
`
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 13 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`1101
`
`
`
`Fig. 14A
`Fig. 148
`
`
`
`
`
`
`
`
`
`
`
`
`
`I
`
`
`'
`Hi
`
`
`
`'
`
`1103
`
`
`
`
`Fig. 140
`
`
`
`
`
`
`
`
`
`
`
`Fig, 14D
`
`Page 15 ofSl
`
`Page 15 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 14 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`Fig. 15
`
`
`first substrate
`
`
`
`
`forming TFTs
`
`
`
`
`forming spacers
`
`
`
`
`
`forming an alignment film
`
`
`
`
`second substrate
`
`
`
`
`
`
`forming an alignment film
`
`
`rubbing prccess
`
`
`
`
`rubbing process
`
`
`
`
`
`forming a sealing member
`
`
`
`
`bonding substrates
`
`
`
`
`cutting substrates
`
`
`
`
`
`injecting liquid crystal
`
`
`
`
`
`sealing an injection port
`
`
`
`
`re-alignment process
`
`
`
`Page 16 ofSl
`
`Page 16 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 15 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`.5an.93ESE$25
`
`
`
`
`
`hmk_mccmza«onhmh_occaz9eumonhmk_mccm:aNonhmk_mccm29dwas
`
`
`
`
`
`
`
`
`
`.r,1.I..1-
`
`llldmwwmIill.IWWII-ImamfiflmlllllllllefiflflmfillJmWfl
`
`
`
`AAIIu.%WWWIIIIIIIIH.l.,.,I‘lmfiflmmmmw.:
`
`
`
`VIV‘ZV/IQ,
`
`
`
`
`
`
`
`
`
`Page 17 ofSl
`
`Page 17 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb.6,2007
`
`
`
`
`Sheet16 0f25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`13.,
`
`
`U3ka“
`nu
`un
`
`my
`
`
`n.
`
` v“
`
`
`
`Fig. 17A
`
`
`
`
`
`
`Fig. 178
`
`
`
`Page 18 ofSl
`
`Page 18 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 17 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1 302
`
`1308
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1310
`
`
`
`
`
`
`
`
`
`
`
`
`130913031312
`13201321
`1311
`13071318a1319
`
`
`
`
`
`
`
`‘lllll'fl
`IIIIIIIfill.44..
`‘x‘
`I"II.
`
`
`§
`'A//////
`
`
`
`
`
`
`
`\\“\\\V
`\ \\\\\‘
`\\\\
`
`
`
`
`
`
`
`
`
`
`
`1317 --
`
`
`
`////////////
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1301
`1314
`1315
`1316
`
`
`
`
`
`
`Driver circuit
`Pixel portion
`
`
`Fig. 188
`
`
`
`Page 19 ofSl
`
`Page 19 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 18 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`1321 13°
`
`5 1300
`
`
`
`
`1303
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1301
`
`
`
`
`
`1306
`
`
`
`
`
`
`
`
`
`.
`
`.
`
`
`
`
`coco-1408
`
`
`
`:1: :22:
`20°00 1302
`2 1:02:31“
`..._1
`
`
`
`
`
`
`
`
`
`
`
`
`\\\\\\\\\\\\\\\
`
`
`
`N
`
`
`
`
`
`’. k \\\\\\\\\\\\\\\\\
`
`
`Fig.19A
`
`
`
`'
`
`Fig.1QB
`
`
`
`
`
`Fig.19C
`
`
`
`
`
`
`
`
`
`
`
`
`
`z 3 '° filmmmn'mmmw
`
`
`iii: ::::1;
`
`:1
`1
`.1h
`5
`1409 i:
`a
`
`:3
`:
`
`141'
`
`EH
`F
`
`
`
`. file‘n‘vum‘m'um‘w‘“!
`
`
`2‘
`N: .
`EN.
`.
`E‘.
`N-
`it
`E‘.
`i K
`1‘: .
`
`
`
`
`
`
`
`
`
`
`V
`'§
`\
`o 0 -~
`o
`° 9 N
`°
`:22.
`o
`o o 1‘
`o
`o 0 .§
`°
`° ° '1‘.
`
`
`
`
`Page 20 of 51
`
`1411
`
`
`
`Page 20 of 51
`
`

`

`
`Sheet 19 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`I:|.|.l..|.II-|..|.-|.|.-....-|.|-|-I-|-.I-Io
`
`
`
`
`
`
`
`hum_.mwmP
`
`
`
`flvlllgg/IIIV/"Il//A//Z‘L’//
`
`llLII
`
`
`
`III.III/IjIr
`
`
`
`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`ll‘..."..i|.......
`
`89325m—82328282we:
`
`
`
`
`
`Page 21 of51
`
`
`
`mmmwNmmrmwmwwmmw.mmmwmmm—mep
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`_Eh5585.:Kb.355.:hogomnmoomflofi”not.EtoxE”vet._28mmdo?wedo:Etoccmzo--.qS:
`
`
`
`.w1]m“\IIIILFIJ\|\J\llerPomp
`
`
`
`[Ill8:53meIIIIIIIIV_Alli“528.625IV_«Sago
`
`uEEEam.528mozo
`
`
`
`
`
`
`
`
`
`_
`
`
`
`Page 21 of 51
`
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 20 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`Fig. 21
`
`1810
`
`‘
`
`Q“
`mummwxmmm “
`
`
`
`
`
`[Immmlr lmml
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1811
`18071818a1819
`18201821
`180918081812
`
`
`
`
`
`
`
`1323 I-1—_-_--—
`
`
`MES? %MV giggé/Z’: 2%
`
`
`
`
`
`
`
`
`
`
`
`
`1816
`1814
`1815
`\___,_._/
`
`
`1818b
`
`1801
`
`
`Driver circuit
`
`
`
`
`Pixel portion
`
`
`
`
`
`Page 22 of 51
`
`Page 22 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`
`Sheet 21 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`
`
`3001: Digital camera
`
`
`
`
`
`
`3002: t0uch panel
`
`
`
`3003: LCD panel‘
`
`
`
`3004: LED back light
`
`
`
`
`
`
`Fig. 22A
`
`
`
`Overview
`
`
`
`
`
`3100
`
`
`
`
`
`
`
`
`
`
`}-3002: touch panel
`
`
`
`}-3003: LCD panel
`
`
`
`
`
`
`3004: LED back light
`
`
`
`3005
`
`
`
`
`
`Cross sectional view
`
`
`
`
`
`
`3102: touch panel
`
`
`
`
`3103: LCD panel
`
`
`3104: back light
`
`
`
`
`
`3105
`
`
`
`
`
`Fig. 223
`
`
`
`Overview
`
`
`
`
`
`
`
`
`
`lulu-“I‘Iulsl-lnIL‘-ni
`
`IOI:OI03.1.:.202.:01.332032020103292.
`
`_ O
`
`
`
`3102: touch panel
`
`
`
`3103: LCD panel
` 3104: back light
`
`
`
`
`
`Cross sectional view
`
`
`
`3105
`
`Page 23 of 51
`
`Page 23 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 22 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`Fig. 23
`
`.__.__.__-__.__-..___._..
`
`
`
`
`
`
`
`
`
`
`
`
`
`-
`
`o
`
`m
`
`9.
`
`I
`-
`l
`!
`I
`|
`I
`
`I
`
`.
`
`.
`
`|
`I
`!
`|
`I
`'
`
`-
`
`.
`
`|
`|
`!
`|
`!‘
`
`Page 24 of 51
`
`
`
`
`13: Y-direction driver circuit
`I
`
`'— '——'——‘ —‘_—‘——‘
`11
`
`
`r—'1 I‘— —‘——'— '—-'—-‘— 13
`
`
`
`—_‘ a
`..
`|
`
`
`I N i
`.
`208
`I x
`I
`
`I g !
`I
`III
`3
`
`
`‘5‘-
`g
`
`g.
`—~
`
`
`
`-
`
`
`o
`
`.-
`
`—
`
`
`18b
`
`20b
`
`I
`
`o
`
`I
`
`o
`
`19a
`
`
`19b
`
`
`
`19c
`
`
`
`Page 24 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 23 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`Fig. 24
`
`
`
`
`
`Transmissivity (a. u.)
`
`
`
`
`
`-5
`
`
`
`-2.5
`
`
`
`
`
`O
`
`
`Applied voltage (V)
`
`
`
`2.5
`
`
`
`
`5
`
`Page 25 ofSl
`
`Page 25 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 24 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`2106
`
`
`
`
`
`Page 26 of 51
`
`Page 26 of 51
`
`

`

`
`U.S. Patent
`
`
`
`
`Feb. 6, 2007
`
`
`
`
`Sheet 25 of 25
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`
`
`
`
`2805
`
`
`
`
`Fig. 260
`
`
`
`Fig. 26D
`
`
`
`
`
`Page 27 of 51
`
`Page 27 of 51
`
`

`

`
`1
`SEMICONDUCTOR DEVICE AND METHOD
`
`
`
`OF FABRICATING THE SAME
`
`
`
`
`
`
`
`
`
`US 7,173,281 B2
`
`
`
`
`
`
`
`2
`
`
`
`
`that transmissivity is lowered by aggregation of the spacers,
`
`
`
`
`
`
`
`and an element just under the spacer is destroyed to generate
`a leak or short circuit.
`
`
`
`
`
`
`
`
`
`
`
`
`Besides, in the step of injecting the liquid crystal material
`
`
`
`
`
`
`
`
`
`by the vacuum injection method, center portions of the
`
`
`
`
`
`
`substrates become recess-shaped at both surfaces by pres-
`
`
`
`
`
`
`
`
`surization at the time of injection, and in this periphery, the
`
`
`
`
`
`
`
`conventional particulate spacer does not have sufficient
`
`
`
`
`
`
`
`compression strength and is destroyed, or the spacer is
`moved and the trace of the movement causes orientation
`
`
`
`
`
`
`
`
`
`defects.
`
`
`
`
`
`
`
`
`
`
`In the case where the generally used conventional par-
`
`
`
`
`
`
`
`
`
`ticulate spacers (glass beads, plastic beads, etc.) are used,
`
`
`
`
`
`
`
`there is adopted a method of spraying the particulate spacers
`
`
`
`
`
`
`
`
`onto one of substrates. Thus, the spacers are disposed on a
`
`
`
`
`
`
`
`
`
`pixel electrode, and block incident
`light or disturb the
`
`
`
`
`
`
`
`orientation of liquid crystal molecules. As a result, it has
`
`
`
`
`
`
`
`
`been difficult
`to adjust
`the transmitted light amount or
`
`
`
`
`
`
`
`
`coloring. Besides, the particulate spacers are easily charged
`
`
`
`
`
`
`
`
`
`with static electricity, so that the spacers become easily
`
`
`
`
`
`
`
`aggregate and are difficult to be uniformly distributed.
`SUMMARY OF THE INVENTION
`
`
`
`BACKGROUND OF THE INVENTION
`
`
`
`
`
`1. Field of the Invention
`
`
`
`
`
`
`
`
`
`
`The present invention relates to a semiconductor device
`
`
`
`
`
`
`
`including a circuit constructed by thin film transistors (here-
`
`
`
`
`
`
`
`inafter referred to as TFTs) and a method of fabricating the
`
`
`
`
`
`
`
`
`
`same. For example,
`the present
`invention relates to an
`
`
`
`
`
`
`
`electro-optical device typified by a liquid crystal display
`
`
`
`
`
`
`
`panel, and an electronic equipment including such an elec-
`
`
`
`tro-optical device as a part.
`
`
`
`
`
`
`
`Incidentally, in the present specification, the term “semi-
`
`
`
`
`
`
`
`conductor device” indicates any devices capable of func-
`
`
`
`
`
`
`tioning by using semiconductor characteristics, and any of
`
`
`
`
`
`
`
`the electro-optical device, semiconductor circuit, and elec-
`
`
`
`
`tronic equipment is a semiconductor device.
`
`
`
`
`2. Description of the Related Art
`
`
`
`
`
`
`
`
`
`In recent years, attention has been paid to a technique for
`
`
`
`
`
`
`
`constructing a thin film transistor (TFT) using a semicon-
`
`
`
`
`
`
`
`
`ductor thin film (its thickness is about several to several
`
`
`
`
`
`
`
`hundred nm) formed on a substrate having an insulating
`
`
`
`
`
`
`
`
`surface. The thin film transistor is widely applied to an
`
`
`
`
`
`electronic device, such as an IC or an electro-optical device,
`
`
`
`
`
`
`and especially as a switching element of an image display
`
`
`
`
`
`
`device, its development has been hastened.
`
`
`
`
`
`
`As a typical example of the electro-optical device, a liquid
`
`
`
`
`
`
`crystal display device, an EL display device, or a contact
`
`
`
`
`
`type image sensor can be cited.
`
`
`
`
`
`
`
`
`In general, the liquid crystal display device includes a pair
`
`
`
`
`
`
`
`of substrates which are opposed to each other at a certain
`
`
`
`
`
`
`
`substrate interval, particulate spacers for keeping the certain
`
`
`
`
`
`
`substrate interval, and a liquid crystal material sealed
`between the substrates.
`
`
`
`
`
`
`
`
`
`
`The substrate interval of the liquid crystal display device
`
`
`
`
`
`
`
`
`
`
`is normally set to 1 to 20 um, and this must be uniformly
`
`
`
`
`
`
`
`
`controlled with accuracy of about 10.1 pm. This is because
`
`
`
`
`
`
`
`
`
`if fluctuation occurs in the substrate interval, not only
`
`
`
`
`
`
`deterioration in display quality, such as generation of irregu-
`
`
`
`
`
`
`
`
`lar color or interference fringe, is caused, but also trouble,
`
`
`
`
`
`
`
`such as circuit damage or disabled display,
`is caused by
`contact of electrodes when the substrate interval is narrowed
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`by an external force. Like this, the spacer is an important
`
`
`
`
`
`
`
`
`member for maintaining the performance of the liquid
`
`
`
`crystal display element.
`
`
`
`
`
`Hereinafter, a conventional method of fabricating a liquid
`
`
`
`
`
`
`
`crystal display device (TFT-LCD) will be described in brief.
`
`
`
`
`
`
`
`
`First, a pair of substrates are prepared. TFT elements and
`
`
`
`
`
`
`
`
`pixel electrodes are formed in matrix form on one of the
`
`
`
`
`
`
`
`
`substrates. Electrodes, color filters or the like are formed on
`
`
`
`
`
`
`
`
`the other substrate. Next, after an alignment film is formed
`
`
`
`
`
`
`
`on each of the pair of substrates, a rubbing processing is
`
`performed.
`
`
`
`
`
`
`
`
`Next, particulate spacers are uniformly sprayed on the
`
`
`
`
`
`
`
`
`alignment film of either one of the substrates. Next, the one
`
`
`
`
`
`
`
`
`substrate is combined with the other substrate, and their
`
`
`
`
`
`
`
`
`peripheral portions are sealed with an adhesive for sealing,
`
`
`
`
`
`
`
`
`
`
`so that a liquid crystal cell is formed. Next, after the liquid
`
`
`
`
`
`
`
`
`
`crystal cell
`is filled with a liquid crystal material by a
`
`
`
`
`
`
`vacuum injection method, an injection port is sealed.
`
`
`
`
`
`
`
`The foregoing flow of steps is a general fabricating
`
`
`process of a TFT-LCD.
`
`
`
`
`
`
`In the above conventional steps, it is difficult to uniformly
`
`
`
`
`
`
`
`
`spray the particulate spacers, aid there have been problems
`
`
`
`
`
`
`
`
`
`
`
`10
`
`
`
`15
`
`
`
`20
`
`25
`
`
`
`30
`
`
`
`35
`
`
`
`40
`
`
`
`45
`
`
`
`50
`
`
`
`55
`
`
`
`60
`
`
`
`65
`
`
`
`Page 28 of51
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`An object of the present invention is to provide a high
`
`
`
`
`
`
`
`
`quality liquid crystal panel having a thickness with high
`
`
`
`
`
`
`
`accuracy, which is designed, without using particulate spac-
`
`
`
`
`
`
`
`ers, within a free range in accordance with characteristics of
`
`
`
`
`
`
`
`
`
`a used liquid crystal and a driving method, and is also to
`
`
`
`
`
`provide a method of fabricating the same.
`
`
`
`
`
`According to an aspect of the present invention, a semi-
`
`
`
`
`
`
`conductor device includes a first substrate, a second sub-
`
`
`
`
`
`
`strate, and a plurality of columnar spacers disposed between
`
`
`
`
`
`
`
`
`the first substrate and the second substrate and maintaining
`an interval between the first substrate and the second sub-
`
`
`
`
`
`
`
`
`
`strate.
`
`
`
`
`
`
`
`
`Besides, according to another aspect of the present inven-
`
`
`
`
`
`
`tion, a semiconductor device includes a first substrate, a
`
`
`
`
`
`
`
`
`second substrate, and a plurality of columnar spacers dis-
`
`
`
`
`
`
`
`
`
`posed between the first substrate and the second substrate,
`wherein a radius R of curvature of each of the columnar
`
`
`
`
`
`
`
`
`
`
`
`
`spacers is 2 pm or less, preferably 1 pm or less.
`
`
`
`
`
`
`Besides, in the foregoing respective structures, a height H
`
`
`
`
`
`
`
`
`
`
`of each of the columnar spacers is 0.5 um to 10 um,
`
`
`
`
`preferably 1.2 pm to 5 pm.
`
`
`
`
`
`
`Besides, in the foregoing respective structures, a width L1
`
`
`
`
`
`
`of each of the columnar spacers is 20 pm or less, preferably
`
`
`7 pm or less.
`
`
`
`
`
`
`Besides, in the foregoing respective structures, an angle (X
`
`
`
`
`
`
`between a tangent plane at a center of a side of each of the
`
`
`
`
`
`
`
`columnar spacers and a substrate surface is 65° to 115°.
`
`
`
`
`
`
`Besides, in the foregoing respective structures, each of the
`
`
`
`
`
`
`
`
`columnar spacers includes a flat surface at its top portion.
`
`
`
`
`
`
`Besides, in the foregoing respective structures, a sectional
`
`
`
`
`
`
`
`shape of each of the columnar spacers in a radial direction
`
`
`
`
`
`
`is a circle, an ellipse, a triangle, a quadrilateral, or a polygon
`
`
`
`
`
`
`having sides more than the former.
`
`
`
`
`
`
`Besides, in the foregoing respective structures, each of the
`
`
`
`
`
`columnar spacers is made of an insulating material.
`
`
`
`
`
`
`Besides, in the foregoing respective structures, each of the
`
`
`
`
`
`
`
`columnar spacers is formed over a contact portion where a
`
`
`
`
`
`
`
`TFT and a pixel electrode are connected to each other.
`
`
`
`
`
`
`
`Besides, the columnar spacers may be formed only at a
`
`
`
`
`
`
`
`sealing region, or may be formed at a sealing region and a
`
`
`
`
`
`
`
`
`region of a driver circuit where an element does not exist.
`
`
`
`
`
`
`
`
`Besides, the columnar spacers may be formed at the sealing
`
`
`
`
`
`
`
`region and a pixel portion, or may be formed at a region of
`
`Page 28 of 51
`
`

`

`
`
`US 7,173,281 B2
`
`
`3
`the driver circuit where an element does not exist and the
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`pixel portion. Besides, the columnar spacers may be formed
`
`
`
`
`
`
`
`
`
`
`at the sealing region and a region between the driver circuit
`
`
`
`
`
`
`
`
`
`and the pixel portion, or the columnar spacers may be
`
`
`
`
`
`
`
`
`
`formed at a region between the driver circuit and the pixel
`
`
`
`
`
`portion, and the pixel portion.
`
`
`
`
`
`
`
`Besides, the columnar spacers may be formed at a sealing
`
`
`
`
`
`
`
`region, over a region of a driver circuit where an element
`
`
`
`
`
`
`
`
`
`does not exist, and at a pixel portion, or the columnar spacers
`
`
`
`
`
`
`
`may be formed over a region of the driver circuit where an
`
`
`
`
`
`
`
`
`
`element does not exist and at a region between the driver
`
`
`
`
`
`
`
`
`
`circuit and the pixel portion. Besides, the columnar spacers
`
`
`
`
`
`
`
`
`may be formed at the sealing region, over a region of the
`
`
`
`
`
`
`
`
`
`driver circuit where an element does not exist, at a region
`
`
`
`
`
`
`
`
`
`
`between the driver circuit and the pixel portion, and the pixel
`
`
`
`
`
`
`
`portion, or the columnar spacers may be formed at a region
`
`
`
`
`
`
`
`
`
`between the sealing region and the pixel portion. Besides,
`
`
`
`
`
`
`
`
`the columnar spacers may be formed at a region between the
`
`
`
`
`
`
`
`
`sealing region and the driver circuit, or the columnar spacers
`
`
`
`
`
`
`
`
`may be formed at a region between the sealing region and an
`
`
`
`
`
`
`
`
`end portion of the substrate. Besides, the columnar spacers
`
`
`
`
`
`may be formed at all regions of the substrate.
`
`
`
`
`
`
`
`Besides, in the foregoing respective structures, in the case
`
`
`
`
`
`
`
`where the columnar spacers are formed to be in contact with
`
`
`
`
`
`
`
`an alignment film, a pretilt angle of liquid crystal is 4° to 5°.
`
`
`
`
`
`
`
`Besides, in the foregoing respective structures, in the case
`
`
`
`
`
`
`
`
`where the columnar spacers are covered with an alignment
`
`
`
`
`
`
`
`film, a pretilt angle of liquid crystal is 6° to 10°.
`
`
`
`
`
`
`
`Besides, according to another aspect of the present inven-
`
`
`
`
`
`
`tion, a semiconductor device includes a display device
`
`
`
`
`
`
`
`equipped with a first substrate, a second substrate, and a
`
`
`
`
`
`
`
`
`plurality of columnar spacers disposed between the first
`
`
`
`
`
`
`
`
`substrate and the second substrate, and a touch panel
`
`
`
`
`
`equipped with an optical detecting element.
`
`
`
`
`
`
`
`Besides, according to another aspect of the present inven-
`
`
`
`
`
`
`tion, a semiconductor device includes a display device
`
`
`
`
`
`
`
`equipped with a first substrate, a second substrate, and a
`
`
`
`
`
`
`
`
`plurality of columnar spacers disposed between the first
`
`
`
`
`
`
`
`
`substrate and the second substrate, and a touch panel
`
`
`
`
`
`
`
`equipped with a pressure sensitive type detecting element.
`
`
`
`
`
`
`
`Besides, according to another aspect of the present inven-
`
`
`
`
`
`
`tion, a semiconductor device includes a display device
`
`
`
`
`
`
`
`equipped with a first substrate, a second substrate, and a
`
`
`
`
`
`
`
`
`plurality of columnar spacers disposed between the first
`
`
`
`
`
`
`
`
`substrate and the second substrate, and a touch panel
`
`
`
`
`
`
`equipped with a capacitive type detecting element.
`
`
`
`
`
`
`
`Besides, according to another aspect of the present inven-
`
`
`
`
`
`
`tion, a method of fabricating a semiconductor device com-
`50
`
`
`
`
`
`
`
`prises a first step of forming a TFT on a substrate, a second
`
`
`
`
`
`
`
`
`step of forming a flattening film to cover the TFT, a third step
`
`
`
`
`
`
`
`
`of forming an opening in the flattening film to reach to the
`
`
`
`
`
`
`
`TFT and forming a pixel electrode, a fourth step of forming
`
`
`
`
`
`
`
`
`
`
`an alignment film on the pixel electrode, a fifth step of
`
`
`
`
`
`
`
`performing a rubbing processing on the alignment film, and
`
`
`
`
`
`
`
`
`a sixth step of forming a columnar spacer made of an
`
`
`
`
`
`
`
`
`insulating film over a contact portion where the TFT is
`
`
`
`
`connected to the pixel electrode.
`
`
`
`
`
`
`
`Besides, according to another aspect of the present inven-
`60
`
`
`
`
`
`
`tion, a method of fabricating a semiconductor device com-
`
`
`
`
`
`
`
`prises a first step of forming a TFT on a substrate, a second
`
`
`
`
`
`
`
`
`step of forming a flattening film to cover the TFT, a third step
`
`
`
`
`
`
`
`
`of forming an opening in the flattening film to reach to the
`
`
`
`
`
`
`
`TFT and forming a pixel electrode, a fourth step of forming
`
`
`
`
`
`
`
`
`a columnar spacer made of an insulating film over a contact
`
`
`
`
`
`
`
`portion where the TFT is connected to the pixel electrode, a
`
`
`
`
`
`
`
`
`
`fifth step of forming an alignment film to cover the pixel
`
`10
`
`15
`
`20
`
`25
`
`30
`
`35
`
`40
`
`45
`
`55
`
`65
`
`Page 29 of 51
`
`
`
`
`
`
`
`
`4
`
`
`
`
`
`
`
`
`electrode and the columnar spacer, and a sixth step of
`
`
`
`
`
`
`performing a rubbing processing on the alignment film.
`
`
`
`
`
`
`
`
`
`In the foregoing structure, the step of forming the colum-
`
`
`
`
`
`
`
`
`
`nar spacer made of the insulating film includes a step of
`
`
`
`
`
`
`
`
`
`forming the insulating film and a step of patterning the
`
`
`
`
`
`
`
`
`insulating film so that the columnar spacer is formed.
`BRIEF DESCRIPTION OF THE DRAWINGS
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`FIGS. 1A and 1B are a SEM observation photograph of a
`
`
`
`
`
`
`
`columnar spacer of the present invention and its schematic
`view.
`
`
`
`
`
`
`FIGS. 2A to 2C are views showing examples of a