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`Glow Discharge Processes
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`SPUTTERING AND PLASMA ETCHING
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`Brian Chapman
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`A WILEY-INTERSCIENCE PUBLICATION
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`JOHN WILEY & SONS
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`New York . Chichestér - Brisbane - Toronto 0 Singapore
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`INTEL EXHIBIT 1015
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`INTEL EXHIBIT 1015
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`___._._.,.......
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`Copyright © 1980 by John Wiley & Sons, Inc.
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`All rights reserved. Published simultaneously in Canada.
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`Reproduction or translation of any part of this work
`beyond that permitted by Sections 107 or 108 of the
`1976 United States Copyright Act without the permission
`of the copyright owner is unlawful. Requests for
`permission or further information should be addressed to
`the Permissions Department, John Wiley & Sons, Inc.
`
`Library of Congress Cataloging in Publication Data
`Chapman, Brian N
`Glow discharge processes.
`
`“A Wiley—lnterscience publication. ‘ ’
`Includes bibliographical references and index.
`1. Sputtering (Physics)
`2. Glow discharges.
`I. Title.
`11. Title: Plasma etching.
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`QC702.7.P6C48
`ISBN 0-471-07828-X
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`537. 5‘2
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`80-17047
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`Printed in the United States of America
`20191817 16 151413
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`324
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`PLASMA ETCHING
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`High Pressure Diode
`Plasma Etching &
`Deposition
`~Grounded Wafer
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`Figure 7-23. High pressure diode plasma etching and deposition-grounded wafer
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`quarter of the applied rf peak-to-peak voltage (Chapter 5) and so typically 75 V
`— 250 V for practical plasma etching processes. This is confirmed by electrical
`measurements and by observation of the dark spaces formed at the sheaths. The
`energy of ion bombardment on an electrode is determined by the sheath voltage
`and by collisions in the sheath, as discussed in Chapters 4 and 5.
`Reactive ion etching systems (Figure 7-24) are essentially converted sputtering
`systems. In sputtering, intense ion bombardment at the target is required, and
`nowhere else. This is achieved by making the target area much less than the area
`of the grounded chamber and baseplate. As a result, the sheath at the walls is
`very small, but the sheath at the target, and hence at the wafer, is about half the
`If peak-to-peak, amounting typically to —300 V.
`The different operating pressures of the two diode systems should not influ-
`ence ion bombardment energies very greatly, because the larger number of
`collisions per unit length at the higher pressure is offset by the consequently
`much thinner dark space sheath. The two effects would be expected to balance
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