(19) United States
`(12) Patent Application Publication (10) Pub. No.: US 2005/0158665 A1
`Maekawa et al.
`(43) Pub. Date:
`Jul. 21, 2005
`
`US 2005O158665A1
`
`(54) SUBSTRATE HAVING FILM PATTERN AND
`MANUFACTURING METHOD OF THE
`SAME, MANUFACTURING METHOD OF
`SEMICONDUCTOR DEVICE, LIQUID
`CRYSTAL TELEVISION, AND EL
`TELEVISION
`(75) Inventors: Shinji Maekawa, Atsugi (JP); Gen
`Fujii, Atsugi (JP); Hiroko Shiroguchi,
`Atsugi (JP); Masafumi Morisue, Atsugi
`(JP)
`Correspondence Address:
`NIXON PEABODY, LLP
`4019TH STREET, NW
`SUTE 900
`WASHINGTON, DC 20004-2128 (US)
`Laboratory
`(73) Assignee: Semiconductor Energy
`Co., Ltd., Atsugi-shi (JP)
`(21) Appl. No.:
`11/025,921
`(22) Filed:
`Jan. 3, 2005
`
`(30)
`
`Foreign Application Priority Data
`
`Jan. 16, 2004 (JP)...................................... 2004-009232
`Apr. 28, 2004 (JP)...................................... 2004-134898
`
`Publication Classification
`
`(51) Int. Cl. ................................................... GO3F 7700
`(52) U.S. Cl. ........................... 430/313; 430/322; 430/317
`
`(57)
`
`ABSTRACT
`
`The invention provides a manufacturing method of a Sub
`Strate having a film pattern including an insulating film, a
`Semiconductor film, a conductive film and the like by Simple
`Steps, and also a manufacturing method of a Semiconductor
`device which is low in cost with high throughput and yield.
`According to the invention, after forming a first protective
`film which has low wettability on a substrate, a material
`which has high wettability is applied or discharged on an
`outer edge of a first mask pattern, thereby a film pattern and
`a Substrate having the film pattern are formed.
`
`
`
`O3
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`103
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`Page 1 of 60
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`Patent Application Publication Jul. 21, 2005 Sheet 4 of 34
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`Patent Application Publication Jul. 21, 2005 Sheet 5 of 34
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`Patent Application Publication Jul. 21, 2005 Sheet 6 of 34
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`Patent Application Publication Jul. 21, 2005 Sheet 7 of 34
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`Patent Application Publication Jul. 21, 2005 Sheet 8 of 34
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`Patent Application Publication Jul. 21, 2005 Sheet 9 of 34
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`Patent Application Publication Jul. 21, 2005 Sheet 12 of 34
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`Patent Application Publication Jul. 21, 2005 Sheet 15 of 34
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`US 2005/0158665 A1
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`Jul. 21, 2005
`
`SUBSTRATE HAVING FILM PATTERN AND
`MANUFACTURING METHOD OF THE SAME,
`MANUFACTURING METHOD OF
`SEMICONDUCTOR DEVICE, LIQUID CRYSTAL
`TELEVISION, AND ELTELEVISION
`
`BACKGROUND OF THE INVENTION
`0001) 1. Field of the Invention
`0002 The present invention relates to a manufacturing
`method of a Semiconductor device having a Semiconductor
`element formed by using a droplet discharging method
`represented by an ink-jetting method, and to a technique to
`form a mask pattern, a contact hole, and a film of each
`portion of a Semiconductor element.
`0003 2. Description of the Related Art
`0004.
`It is examined that a droplet discharging apparatus
`is used for forming a pattern of a thin film and a wiring used
`for a Semiconductor element in order to realize low cost
`equipment and Simplify the proceSS in manufacturing a
`Semiconductor device.
`0005. A contact hole of a semiconductor element is
`formed by a photolithography proceSS in which resist is
`applied on an entire Surface of the Substrate, prebaked, an
`ultraviolet ray and the like are irradiated to the substrate
`through a mask pattern, and a resist pattern is formed by
`development. Then, an insulating film formed on a portion
`to be a contact hole is removed by etching with the resist
`pattern as a mask pattern, thus the contact hole is formed.
`0006 Further, a film pattern of a desired shape is formed
`by etching a Semiconductor film, an insulating film, a metal
`film and the like by using a resist pattern.
`0007
`Patent Document 1)
`0008 Japanese Patent Laid-Open No. 2000-892.13
`
`SUMMARY OF THE INVENTION
`0009. However, in the conventional process for forming
`a film pattern, an insulating film having a contact hole, and
`the like, bulk of materials of the film pattern and the resist
`are wasted and a large number of Steps are required for
`forming a mask pattern, which decreases throughput.
`0010. In the case where the amount of application of
`resist and a Surface condition of a base film are not con
`trolled Sufficiently when opening a contact hole, the resist
`Spreads over the contact hole and a defective contact may
`OCC.
`0.011 The invention is made in view of the aforemen
`tioned problems to provide a manufacturing method of a
`Substrate having a film pattern of an insulating film, a
`Semiconductor film, a conductive film and the like through
`Simple Steps, and a manufacturing method of a low cost
`Semiconductor device with high throughput and yield.
`0012. According to the invention, after a first protective
`film (hereinafter referred to as a mask pattern) which has low
`wettability is formed on a substrate, a highly wettable
`material is applied or discharged on an outer edge of the first
`mask pattern to form a film pattern and a Substrate having
`the film pattern.
`
`0013. According to the invention, after the first mask
`pattern which has low wettability is formed on the substrate,
`a highly wettable material is applied or discharged on a
`region except for the first mask pattern to form a film pattern
`and a Substrate having the film pattern.
`0014. According to the invention, after the first mask
`pattern which has low wettability is formed on the substrate,
`a highly wettable material is applied or discharged in a
`region on which the first mask pattern is not formed to form
`a film pattern and a Substrate having the film pattern.
`0015 According to the invention, after the first mask
`pattern which has low wettability is formed on a thin film or
`a member, a Second mask pattern which has high wettability
`is formed, the first mask pattern and a thin film or a member
`covered with the first mask pattern are removed, and an
`insulating film having a film pattern or a contact hole is
`formed. Note that the Second mask pattern can be removed
`later.
`0016. The first mask pattern which has low wettability
`easily repels liquid while liquid Spreads over the Second
`mask pattern which has high wettability. Liquid Solution as
`a material of for the Second mask pattern is repelled in a
`Semispherical shape on a Surface of the first mask pattern,
`therefore, the Second mask pattern can be formed in a
`Self-aligned manner.
`0017. The first mask pattern which has low wettability
`can be formed by irradiating plasma fluoride to an insulating
`layer. The plasma fluoride can be generated in fluorine or
`fluoride atmosphere, or by using an electrode having a
`dielectric including fluoroplastic.
`0018 For forming the first mask pattern which has low
`wettability, a material which has low wettability may be
`discharged or applied on a predetermined position. The
`material which has low wettability is, for example, a com
`pound containing a fluorocarbon chain.
`0019. It is preferable that a contact angle of the first mask
`pattern which has low wettability be larger than a contact
`angle of the Second mask pattern which has high wettability,
`and a difference between these contact angles be 30, or
`preferably 40 or more. As a result, each mask pattern can
`be formed in a Self-aligned manner as the material of the
`Second mask pattern is repelled in a Semispherical shape on
`the Surface of the first mask pattern.
`0020. The second mask pattern is preferably used for a
`mask for forming a film pattern.
`0021. The film pattern is an insulating film, a semicon
`ductor film, a conductive film having desired shapes, or an
`insulating film having a contact hole. Typically, a gate
`insulating film, an interlayer insulating film, a protective
`film, an insulating film Such as an insulting film having a
`contact hole, a Semiconductor film of a channel forming
`region, a Source region, and a drain region, and a conductive
`film Such as a Source electrode, a drain electrode, a wiring,
`a gate electrode, a pixel electrode, and an antenna are used.
`After removing the mask pattern, composition of the mask
`pattern Still exists in the periphery of the film pattern (a
`region in which the mask pattern was formed).
`0022. The first mask pattern which has low wettability is
`formed by using a liquid phase method or a printing method.
`
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`The liquid phase method includes the droplet discharging
`method, the ink-jetting method and the like representatively.
`0023 The second mask pattern which has high wettabil
`ity is formed by using the liquid phase method. The liquid
`phase method includes a droplet discharging method, an
`ink-jetting method, a Spin coating method, a roll coating
`method, a slot coating method and the like representatively.
`0024. According to the invention, a semiconductor ele
`ment is formed by using a film pattern or a member formed
`by using the first mask pattern which has low wettability and
`the second mask pattern which has high wettability. The
`Semiconductor element is, for example, a TFT, a field effect
`transistor (FET), a MOS transistor, a bipolar transistor, an
`organic Semiconductor transistor, an MIM element, a
`memory element, a diode, a photoelectric converter, a
`capacitor, a resistor and the like.
`0.025 According to the invention, a semiconductor
`device having a film pattern formed by using the first mask
`pattern which has low wettability and the Second mask
`pattern which has high wettability, a Substrate having the
`film pattern, or a Semiconductor element, and a manufac
`turing method thereof are provided. The Semiconductor
`device is, for example, an integrated circuit, a display
`device, a wireleSS tag, an IC tag, an IC card and the like
`formed of a Semiconductor element. The display device
`includes a liquid crystal display device, a light emitting
`display device, a DMD (Digital Micromirror Device), a PDP
`(Plasma Display Panel), an FED (Field Emission Display),
`an electrophoresis display device (electronic paper) and the
`like representatively. The TFT is, for example, a Staggered
`TFT, an inverted staggered TFT (a channel-etch type TFT or
`a channel protective type TFT), a top gate coplanar TFT, a
`bottom gate coplanar TFT and the like.
`0026. In the invention, a display device means a device
`using a display element, that is an image display device.
`Further, a module in which a connector Such as a flexible
`printed circuit (FPC) or a TAB (Tape Automated Bonding)
`tape or a TCP (Tape Carrier Package) are attached to a
`display panel, a module in which an IC (Integrated Circuit)
`and a CPU are directly mounted on a display element by a
`COG (Chip On Glass) method are all included in the display
`device.
`0027. The invention provides the aforementioned film
`pattern, a Substrate having the film pattern, a Semiconductor
`element, or a liquid crystal television or an EL television
`having a Semiconductor device.
`0028. According to the invention, after forming a mask
`pattern by using a material for forming a liquid repellent
`Surface on a lyophilic Surface, a film pattern and a Substrate
`having the film pattern are formed by using a lyophilic
`material on an outer edge of the mask pattern.
`0029. According to the invention, after forming a mask
`pattern by using a material for forming a liquid repellent
`Surface on a lyophilic Surface, a film pattern and a Substrate
`having the film pattern are formed by using a lyophilic
`material in a region except for the mask pattern.
`0.030. According to the invention, after forming a mask
`pattern by using a material for forming a liquid repellent
`Surface on a lyophilic Surface, a film pattern and a Substrate
`
`having the film pattern are formed by using a lyophilic
`material in a region where the mask pattern is not formed.
`0031. According to the invention, after forming a first
`mask pattern by using a material for forming a liquid
`repellent Surface on a film or a member having a lyophilic
`Surface, a Second mask pattern is formed by using a lyophilic
`material, and the first mask pattern and the film or the
`member having a lyophilic Surface covered with the first
`mask pattern are removed to form a film pattern or an
`insulating film having a contact hole. Note that the Second
`mask pattern can be removed as well.
`0032. The film pattern is an insulating film having a
`desired shape, a Semiconductor film, a conductive film, or an
`insulating film having a contact hole. Typically, a gate
`insulating film, an interlayer insulating film, a protective
`film, an insulating film Such as an insulting film having a
`contact hole, a Semiconductor film of a channel forming
`region, a Source region, a drain region, and the like, and a
`conductive film Such as a Source electrode, a drain electrode,
`a wiring, a gate electrode, a pixel electrode, and an antenna
`and the like are used. After removing the mask pattern,
`composition of the mask pattern Still exists in the periphery
`of the film pattern (a region in which the mask pattern was
`formed).
`0033. A material for forming a liquid repellent surface is
`representatively Silane coupling agent expressed by a chemi
`cal formula: R-Si-Xai (n=1,2, and 3). Here, R contains
`a comparatively inactive group Such as an alkyl group.
`Further, X denotes hydrolysable group which can be bound
`by the condensation with absorptive water or hydroxyl
`group on a Surface of a ground Substance Such as halogen,
`methoxy group, ethoxy group, or acetoxy group.
`0034). A silane coupling agent containing fluorocarbon
`group as R (flouroalkyl silane (FAS)) forms a liquid repel
`lent Surface which has higher liquid repellency.
`0035 A material having a fluorocarbon chain (represen
`tatively fluorocarbon resin) is an example of the material
`having a liquid repellent Surface.
`0036) The solvent forming the water repellent surface is
`hydrocarbon Solvent Such as n-pentane, n-hexane, n-hep
`tane, n-octane, n-decane, dicyclopentane, benzene, toluene,
`Xylene, durene, indene, tetrahydronaphthalene, decahy
`dronaphthalene, and Squalene, or tetrahydrofuran and the
`like.
`0037. By irradiating plasma, laser or electron beam to the
`material having a liquid repellent Surface, the liquid repel
`lency can be improved.
`0038. As the lyophilic material, a substituent (hydroxyl
`group, hydrogen group) which can be bonded to the lyo
`philic surface by hydrolysis or a substituent (hydroxyl
`group, hydrogen group, carbonyl group, amino group, Sul
`fonyl group, ether group and the like) which is capable of
`hydrogen bonding are used. Representatively, organic resin
`Such as acryl resin, polyimide resin, melamine resin, poly
`ester resin, polycarbonate resin, phenol resin, epoxy resin,
`polyacetal, polyether, polyurethane, polyamide (nylon),
`furan resin, diallyl phthalate resin, and also siloxane and
`polysilaZane can be used. Siloxane is a polymer material
`which contains a bond of Silicon (Si) and oxygen (O) as a
`backbone Structure and contains at least hydrogen as a
`
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`
`Substituent or at least one of fluoride, alkyl group, or
`aromatic carbon hydride as a Substituent. PolysilaZane is a
`polymer material containing a bond of Silicon (Si) and
`nitrogen (Ni), that is a liquid material containing polysila
`
`Zac.
`0039. A lyophilic Surface has a reactive group having
`polarity on the Surface, representatively a Substituent
`(hydroxyl group, hydrogen group) which can be bonded to
`the lyophilic surface by hydrolysis or a substituent (hydroxyl
`group, hydrogen group, carbonyl group, amino group, Sul
`fonyl group, ether group and the like) which is capable of
`hydrogen bonding.
`0040. A mask pattern formed of a material for forming a
`liquid repellent Surface is formed by using the liquid phase
`method. The liquid phase method includes the droplet dis
`charging method, the ink-jetting method and the like repre
`Sentatively.
`0041 Amask pattern or a film pattern formed of lyophilic
`Solution is formed by using the liquid phase method. The
`liquid phase method is, for example, the droplet discharging
`method, the ink-jetting method, the Spin coating method, the
`roll coating method, the slot coating method and the like
`representatively.
`0042. According to the invention, a semiconductor ele
`ment is formed by using a film pattern or a member formed
`by using the mask pattern formed of a material for forming
`a liquid repellent Surface. The Semiconductor element
`includes a TFT, a field effect transistor (FET), a MOS
`transistor, a bipolar transistor, an organic Semiconductor
`transistor, an MIM element, a memory element, a diode, a
`photoelectric converter, a capacitor, a resistor and the like.
`0043. The invention provides a film pattern formed by
`using the mask pattern having a liquid repellent Surface, a
`Substrate having the film pattern, or a Semiconductor device
`having a Semiconductor element, and a manufacturing
`method thereof. The Semiconductor device is, for example,
`an integrated circuit, a display device, a wireleSS tag, an IC
`tag and the like formed of a Semiconductor element. The
`display device is, for example, a liquid crystal display
`device, a light emitting display device, a DMD (Digital
`Micromirror Device), a PDP (Plasma Display Panel), an
`FED (Field Emission Display), an electrophoresis display
`device (electronic paper) and the like. The TFT is, for
`example, a staggered TFT, and an inverted Staggered TFT (a
`channel-etch type TFT or a channel protective type TFT).
`0044) In the invention, a display device means a device
`using a display element, that is an image display device.
`Further, a module in which a connector Such as a flexible
`printed circuit (FPC) or a TAB (Tape Automated Bonding)
`tape or a TCP (Tape Carrier Package) is attached to a display
`panel, a module in which an IC (Integrated Circuit) and a
`CPU (Central Processing Unit) are directly mounted on a
`display element by a COG (Chip On Glass) method are all
`included in the display device.
`004.5 The invention provides the aforementioned film
`pattern, a Substrate having the film pattern, a Semiconductor
`element, or a liquid crystal television and an EL television
`having the Semiconductor element.
`0.046 By using the first mask pattern which has low
`wettability and the Second mask pattern which has high
`
`wettability according to the invention, a film pattern of a
`desired shape can be formed on a desired position. A film
`which functions as an interlayer insulating film, a planariz
`ing film, a gate insulating film and the like can be formed
`Selectively on a desired position. Moreover, as an insulating
`film having a film pattern and a contact hole can be formed
`without exposure and development processes using a resist
`mask pattern, the proceSS can considerably be simplified as
`compared to a conventional technique.
`0047. By irradiating plasma, laser or electron beam and
`the like on a mask pattern which has low wettability, the
`wettability can be further decreased.
`0048. By using a mask pattern formed of a material for
`forming a liquid repellent Surface, a film pattern of a desired
`shape can be formed at a desired position. A film which
`functions as an interlayer insulating film, a planarizing film,
`a gate insulating film and the like can be formed Selectively
`on a desired position. Moreover, as an insulating film having
`a film pattern and a contact hole can be formed without
`exposure and development processes using a resist mask
`pattern, therefore, the proceSS can considerably be simplified
`as compared to a conventional technique. As the mask
`pattern has a liquid repellent Surface, a film formed of a
`lyophilic material is not formed, thus the mask pattern can
`easily be removed and a favorable contact hole can be
`formed through a simplified process.
`0049. By irradiating plasma, laser, or electron beam and
`the like to a mask pattern formed of a material for forming
`a liquid repellent Surface, the liquid repellency can be further
`improved.
`0050. By applying the droplet discharging method before
`forming a mask pattern which has low wettability, a mask
`pattern formed of a material for forming a liquid repellent
`Surface, a conductive film and the like, droplets can be
`discharged on an arbitrary position by changing a relative
`positions of a Substrate and a nozzle which is an discharging
`hole of the droplets containing a material of the aforemen
`tioned films. As a thickness and a width of a pattern to be
`formed can be controlled according to a relative relationship
`of a nozzle diameter, an amount of the droplets to be
`discharged, and a moving rate of the nozzle and a Substrate
`on which the discharged droplets are formed, those films can
`be formed at a desired position with high accuracy by
`discharge. Since a patterning process, namely the exposure
`and development processes using a mask pattern can be
`omitted, the process can considerably be Simplified and cost
`can be reduced. By using the droplet discharging method, a
`pattern can be formed at an arbitrary position and a thickneSS
`and a width of the pattern can be controlled. Therefore, even
`a large Semiconductor Substrate of which one Side is longer
`than 1 to 2 m can be manufactured at low cost with high
`yield.
`0051. In this manner, according to the invention, a film
`pattern, a Substrate having the film pattern, an insulating film
`having a contact hole, and moreover a Semiconductor ele
`ment and a Semiconductor device having these can be
`formed through a simple process with high precision. Fur
`thermore, the invention can provide a manufacturing method
`of a Semiconductor element and a Semiconductor device at
`low cost with high throughput and high yield.
`
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`BRIEF DESCRIPTION OF THE DRAWINGS
`0.052 FIGS. 1A to 1C are sectional views showing steps
`of forming a film pattern according to the invention.
`0053 FIGS. 2A to 2D are sectional views showing steps
`of forming a film pattern according to the invention.
`0054 FIGS. 3A to 3D are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`0055 FIGS. 4A to 4E are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`0056 FIGS. 5A to 5E are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`0057 FIGS. 6A to 6D are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`0.058 FIGS. 7A to 7C are sectional views showing steps
`of forming a film pattern according to the invention.
`0059 FIGS. 8A to 8E are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`0060 FIGS. 9A to 9D are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`0061 FIGS. 10A to 10C are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`0.062
`FIG. 11 is a top plan view showing a manufactur
`ing Step of a Semiconductor device according to the inven
`tion.
`FIG. 12 is a top plan view showing a manufactur
`0.063
`ing Step of a Semiconductor device according to the inven
`tion.
`FIG. 13 is a top plan view showing a manufactur
`0.064
`ing Step of a Semiconductor device according to the inven
`tion.
`0065 FIGS. 14A to 14C are top plan views showing
`mounting methods of driver circuits of a Semiconductor
`device according to the invention.
`0.066 FIGS. 15A to 15D are sectional views showing
`mounting methods of driver circuits of a Semiconductor
`device according to the invention.
`0067 FIG. 16 is a view showing a structure of a liquid
`crystal display module according to the invention.
`0068 FIG. 17 is a block diagram showing a structure of
`an electronic apparatus.
`0069 FIG. 18 is a diagram showing an example of an
`electronic apparatus.
`0070 FIGS. 19A and 19B are diagrams showing
`examples of an electronic apparatus.
`0071
`FIG. 20 is a diagram showing a structure of a
`droplet discharging apparatus which can be applied to the
`invention.
`
`0072 FIG. 21 is a diagram showing a circuit configura
`tion in the case of forming a Scan driver circuit using TFTS
`in a liquid crystal display panel according to the invention.
`0073 FIG. 22 is a diagram showing a circuit configura
`tion in the case of forming a Scan driver circuit using TFTS
`in a liquid crystal display panel according to the invention
`(shift register circuit).
`0074 FIG. 23 is a diagram showing a circuit configura
`tion in the case of forming a Scan driver circuit using TFTS
`in a liquid crystal display panel according to the invention
`(buffer circuit).
`0075 FIGS. 24A to 24C are sectional views showing
`Steps of forming a film pattern according to the invention.
`0.076 FIGS. 25A to 25D are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`0.077
`FIGS. 26A to 26D are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`0078 FIGS. 27A and 27B are sectional views showing
`manufacturing Steps of a Semiconductor device according to
`the invention.
`007.9
`FIGS. 28A and 28B are views showing a droplet
`dropping method which can be applied to the invention.
`0080 FIG. 29 is a diagram showing contact angles of a
`region which has low wettability and a region which has
`high wettability.
`0081 FIGS. 30A and 30B are views showing a structure
`of a light emitting display module according to the inven
`tion.
`0082 FIGS. 31A to 31F are diagrams showing modes of
`a light emitting