Jack C. Lee
`Professor and Cullen Trust for Higher Education Endowed Professorship in
`Engineering # 4, Electrical and Computer Engineering Department
`The University of Texas at Austin
`
`
`Research / teaching experience and expertise:
`•
`Integrated circuits manufacturing
`• Photovoltaic/solar cell technologies
`• Alternative channel devices
`
`
`Education
`Ph.D., Electrical Engineering, University of California at Berkeley
`9/84 – 8/88
`9/80 – 12/81 M.S., Electrical Engineering, University of California at Los Angeles
`9/76 – 6/80 B.S., Electrical Engineering (with highest honors),
`
`University of California at Los Angeles
`
`• Dielectric and passivation processes
`• Display technologies
`• Semiconductor memory devices
`
`
`
`
`Professional Career
`9/00 – present Cullen Trust for Higher Education Endowed Professorship in Engineering #4
`Department of Electrical and Computer Engineering
`The University of Texas at Austin
`
`9/96 – present Professor, Department of Electrical and Computer Engineering
`
`The University of Texas at Austin
`9/92 – 8/96 Assistant Professor, Department of Electrical and Computer Engineering
`
`The University of Texas at Austin
`9/88 – 8/92 Associate Professor, Department of Electrical and Computer Engineering
`
`The University of Texas at Austin
`1/88 – 6/88 Lecturer, Electrical Engineering and Computer Science Department
`
`University of California at Berkeley
`6/79 – 8/84 Member of Technical Staff, High-Speed Bipolar Device Program
`TRW Microelectronics Center, Redondo Beach, CA
`
`
`Honors and Awards
`IEEE Electron Devices Society Distinguished Lecturer, 2004 - 2016.
`Fellow, The Institute of Electrical and Electronic Engineers (IEEE), 2002 “For
`contributions to the understanding and development of ultra-thin dielectrics and their
`application to silicon devices”
`Gordon Lepley IV Endowed Memorial Teaching Award, ECE Department, The
`University of Texas at Austin, 2004
`Cullen Trust For Higher Education Endowed Professorship in Engineering, 2000-present
`Dean’s Fellow, College of Engineering, The University of Texas at Austin, 1999, 2003
`Lockheed Fort-Worth Division Award for Excellence in Engineering Teaching,
` College of Engineering, The University of Texas at Austin, 1996
`Award of Excellence, Halliburton Foundation, 1993
`Departmental Teaching Award, College of Engineering, The University of Texas at
`Austin, 1993
`SRC Inventor Recognition Award, Semiconductor Research Corporation, 1991
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 1 of 64
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`

`Hughes Aircraft Company Endowed Faculty Fellowship in Engineering,
`
`The University of Texas at Austin, 1991- 2000
`Outstanding Engineering Teaching by an Assistant Professor, College of Engineering,
`
`The University of Texas at Austin, 1991
`Best Paper Award, SEMATECH Centers of Excellence Coordination Meeting, 1990.
`Dow Outstanding Young Faculty Award, American Society for Engineering Education,
`1990
`Engineering Research Initiation Award, Engineering Foundation of the United
`Engineering Trustees, 1989
`Best Paper Award, IEEE International Reliability Physics Symposium, 1988
`
`
`Litigation Experience as Testifying Experts
`The following is a list of cases in which I have provided testimony, at trial, deposition, or a
`tutorial.
`
`
`
`
`
`•
`
`• Greenthread LLC v. Samsung
`February 2020 –
`(Representing plaintiff, Greenthread LLC)
`
`Impinj, Inc. v. NXP USA, Inc.
`September 2019 –
`(Representing defendant, NXP USA, Inc.)
`
`• MLC Intellectual Property LLC vs. Micron Technology, Inc.,
`June 2016 –
`(Representing plaintiff, MLC Intellectual Property LLC)
`
`• Hanwha v. LONGi Solar Technology
`April 2019 – June 2020
`(Representing defendant LONGi Solar Technology)
`
`• Vista Peak Ventures, LLC v. Innolux Corp.
`January 2019 – March 2019
`(Representing IPR Petitioner, Innolux Corp.)
`
`• Home Semiconductor Corp. v. Samsung
`August 2018 – June 2020
`(Representing plaintiff, Home Semiconductor Corp.)
`
`• Macronix v. Toshiba
`May 2017 – February 2018
`(Representing defendant, Toshiba)
`
`• University of Illinois v. Micron Technology
`September 2009 – November 2017
`(Representing plaintiff, Univ. of Illinois)
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 2 of 64
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`

`

`
`• Godo Kaisha IP Bridge 1 v. OmniVision Technologies, Inc.
`January 2018 – December 2018
`(Representing defendant, OmniVision Technologies, Inc.)
`
`• Silicon Genesis v. Soitec
`October 2016 – March 2017
`(Representing plaintiff, Silicon Genesis)
`
`• Samsung Electronics v. NVIDIA Corporation,
`January 2015 – April 2016
`(Representing defendant, NVIDIA)
`
`• Macronix, Inc. v. Spansion, Inc.
`September 2014 – January 2015
`(Representing defendant, Spansion, Inc.)
`
`• Keranos, LLC v. MicrochipTechnology, Inc.
`August 2012 – February 2014
` (Representing defendant, MicrochipTechnology)
`
`• Elpida Memory, Inc. vs. Nanya Technology Corporation
`April 2012 – December 2012
`(Representing defendant, Nanya Technology Corporation)
`
`• Spansion LLC v. Samsung
`July 2009 – March 2010
`(Representing plaintiff, Spansion LLC)
`
`• Advanced Micro Devices v. Samsung
`March 2008 – September 2010
`(Representing plaintiff, Advanced Micro Devices)
`
`• Agere Systems Inc. v. Rohm Co. Ltd.
`April 2006 – November 2007
`(Representing plaintiff, Agere Systems Inc.)
`
`
`
`
`
`
`
`
`
`
`
`
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 3 of 64
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`

`

`Publications
`Refereed Journal Publications
`
`1.
`
`J. Lee, K. Mayaram and C. Hu, "A Theoretical Study of Gate/Drain Offset in LDD
`MOSFET's," IEEE Electron Device Letters, vol. EDL-7, no. 3, p. 152 - 154, March
`1986.
`
`
`2.
`
`J. Lee, I-C Chen and C. Hu, "Comparison Between CVD and Thermal Oxide Dielectric
`Integrity," IEEE Electron Device Letters, vol. EDL-7, no. 9, p. 506 - 509, September
`1986.
`
`
`3. K. Mayaram, J. Lee and C. Hu, "A Model for the Electric Field in Lightly Doped Drain
`Structures," IEEE Transactions on Electron Devices, vol. ED-34, no.7, p. 1509 - 1518,
`July 1987.
`
`
`4.
`
`
`5.
`
`
`6.
`
`J. Lee and C. Hu, "Polarity Asymmetry of Oxides Grown on Polycrystalline Silicon,"
`IEEE Transactions on Electron Devices, vol. ED-35, no. 7, p. 1063 - 1070, July 1988.
`
`J. Lee, C. Hegarty and C. Hu, "Electrical Characteristics of MOSFET's Using Low-
`Pressure Chemical Vapor Deposited Oxide," IEEE Electron Device Letters, vol. EDL-
`9, no. 7, p. 324 - 327, July 1988.
`
`J. Lee, I-C Chen and C. Hu, "Modeling and Characterization of Gate Oxide Reliability,"
`Special Issue of IEEE Transactions on Electron Devices on Reliability, Vol. ED-35,
`no. 12, p. 2268 - 2278, December 1988.
`
`
`7. H. Hwang, W. Ting, D. L. Kwong, J. Lee, L. Buhrow and R. Bowling, "Electrical
`Characteristics of Reoxidized-nitrided CVD Oxide," Applied Physics Letters, 55(8), p.
`755 - 756, 21 August, 1989.
`
`
`8. R. Moazzami, J. Lee and C. Hu, "Temperature Acceleration of Time-Dependent
`Dielectric Breakdown," Special issue of IEEE Transactions on Electron Devices on
`Vacuum Microelectronic Devices, vol. ED-36, no. 11, p. 2462 - 2465, November 1989.
`
`
`9. H. Hwang, W. Ting, D.L. Kwong, J. Lee, L. Buhrow and R.A. Bowling, "Effects of
`Dynamic Stressing on Nitrided and Reoxidized-Nitrided Chemical Vapor Deposited
`Gate Oxides," IEEE Electron Device Letters, vol. EDL-10, no. 12, p. 568 - 570,
`December 1989.
`
`
`10. J. Lin, S. Banerjee, J. Lee, and C. Teng, "Soft Breakdown in Titanium-Silicided
`Shallow Source/Drain Junction," IEEE Electron Device Letters, vol. EDL-11, no. 5, p.
`191 - 193, May 1990.
`
`
`11. K. Park, S. Batra, J. Lin, S. Yoganathan, J. Lee, S. Banerjee, S. Sun, J. Yeargain, and
`G. Lux, "Anomalous Capacitance-Voltage Behavior Due to Dopant Segregation and
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 4 of 64
`
`

`

`Carrier Trapping in Arsenic-Implanted Polysilicon and Polycide Gates," Applied
`Physics Letters, vol. 56, no. 23, p.2325 - 2327, June 4, 1990.
`
`
`12. J. Lin, S. Banerjee, J. Lee, and C. Teng, "Anomalous Current-Voltage Behavior in
`Titanium-Silicided Source/Drain Junctions," Journal of Applied Physics, vol. 68, no.
`3, p. 1082 - 1087, August 1, 1990.
`
`
`13. H. Hwang, W. Ting, B. Maiti, D.L. Kwong and J. Lee, "Electrical Characteristics of
`Ultrathin Gate Dielectrics Prepared by Rapid Thermal Oxidation of Si in N2O,"
`Applied Physics Letters, vol. 57, no. 10, p. 1010 - 1011, Sept. 3, 1990.
`
`
`14. S. Batra, K. Park, J. Lin, S. Yoganathan, J. Lee, S. Banerjee, S. Sun, J. Yeargain and
`G. Lux "Effects of Dopant Redistribution, Segregation and Carrier Trapping in As-
`Implanted MOS Gates," IEEE Transactions on Electron Devices, vol. 37, no. 11, p.
`2322 - 2330,October, 1990.
`
`
`15. S. Bhattacharya, S. Banerjee, J. Lee, A. Tasch and A. Chatterjee, "The Impact of Trench
`Isolation on Latch-up Immunity in Bulk, Non-epitaxial CMOS," IEEE Electron Device
`Letters, vol. EDL-12, no. 2, p. 77 - 79, February, 1991.
`
`
`16. W. Ting, H. Hwang, J. Lee and D. L. Kwong, "Composition and Growth Kinetics of
`Ultrathin SiO2 Films Formed by Oxidizing Si Substrate in N2O," Applied Physics
`Letters, vol. 57, p. 2808 - 2810, 1990.
`
`
`17. W. Ting, P.C. Li, G. Q. Lo, J. Lee and D.L. Kwong, "Metal-Oxide Semiconductor
`Characteristics of Rapid Thermal Processed Chemical Vapor Deposited SiO2 Gate
`Dielectrics," Solid State Electronics , vol. 34, no. 4, p 385 - 388, 1991.
`
`
`18. W. Ting, H. Hwang, J. Lee and D.L. Kwong, "Growth Kinetics of Ultrathin SiO2 Films
`Prepared by Rapid Thermal Oxidation of Si Substrates in N2O," Journal of Applied
`Physics, vol. 70, no. 2, p. 1072 - 1074, July 15, 1991.
`
`
`19. J. Lin, K. Park, S. Batra, S. Banerjee, J. Lee and G. Lux, "Enhancement of Boron
`Diffusion Through Gate Oxides in MOS Devices During Rapid Thermal Silicidation,"
`Applied Physics Letters, vol. 58, no. 19, p. 2123 - 2125, May 1991.
`
`
`20. H. Hwang, W. Ting, D. L. Kwong and J. Lee, "A Physical Model for Boron Penetration
`Through Oxynitride Gate Dielectric Prepared by Rapid Thermal Processing in N2O,"
`Applied Physics Letters, vol. 59, no. 13, p. 1581 - 1582, September 23, 1991.
`
`
`21. H. Hwang, W. Ting, D. L. Kwong and J. Lee, "Improved Reliability Characteristics of
`Submicron nMOSFET's with Oxynitride Gate Dielectrics Prepared by Rapid Thermal
`Oxidation in N2O," IEEE Electron Device Letters, vol. 12, no.9, p.495-497, September
`1991.
`
`
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 5 of 64
`
`

`

`22. J. Carrano, C. Sudhama, V. Chikarmane, J. Lee, A. Tasch, W. Shepherd and N. Abt,
`"Electrical and Reliability Properties of PZT Thin Films for ULSI DRAM
`Applications," IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency
`Control, vol. 38, no. 6, p. 690 - 703, November 1991.
`
`
`23. V. Chikarmane, C. Sudhama, J. Kim, J. Lee, A. Tasch and S. Novak, "Comparative
`Study of The Perovskite Phase Microstructure Evolution and Electrial Properties of
`PZT Thin Film Capacitors Annealed in Oxygen and Nitrogen Ambients," Applied
`Physics Letters, vol. 59, no. 22, p. 2850 - 2852, Nov. 25, 1991.
`
`
`24. M. Hao and J. Lee, "Electrical Characteristics of Oxynitrides Grown on Textured
`Single-Crystal Silicon," Applied Physics Letters, vol. 60, no. 4, p. 445 - 447, January
`27, 1992 .
`
`
`25. S. Bhattacharya, S. Banerjee, J. Lee, A. Tasch and A. Chatterjee, "Parametric Study of
`Latchup-Immunity of Deep Trench-Isolated, Bulk, Non-epitaxial CMOS," IEEE Trans.
`Elec. Dev., vol. 39, no. 4, p. 921 - 931, April 1992.
`
`
`26. V. Chikarmane, J. Kim, C. Sudhama, J. Lee and A. Tasch, "Annealing of Lead
`Zirconate Titanate (65/35) Thin Films for Storage Dielectric Applications: Phase
`Transformations and Electrical Characteristics," Journal of Electronic Materials, vol.
`21, no. 5, p. 503 - 512, May 1992.
`
`
`27. V. Chikarmane, C. Sudhama, J. Kim, J. Lee and A. Tasch, "Effects of Post-Deposition
`Annealing Ambient on the Electrical Characteristics and Phase Transformation
`Kinetics of Sputtered Lead Zirconate titanate (65/35) Thin Film Capacitors," Journal
`of Vacuum Science and Technology, vol. 10, no. 4, p. 1562 - 1568, July 1992.
`
`
`28. V.K. Mathews, R. L. Maddox, P.C. Fazan, J. Rosato, H. Hwang and J. Lee,
`"Degradation of Junction Leakage in Devices Subjected to Gate Oxidation in Nitrous
`Oxide," IEEE Electron Device Letters, vol. 13, no. 12, p. 648 - 650, Dec. 1992.
`
`
`29. B. Maiti, M. Hao, I. Lee and J. Lee,"Improved Ultrathin Oxynitride Formed by Thermal
`Nitridation and Low Pressure Chemical Vapor Deposition Process," Applied Physics
`Letters, vol. 61, p. 1790 - 1792, 1992.
`
`
`30. B. Maiti and J. Lee, "Low-Pressure Chemical Vapor Deposited Silicon-Rich Oxides
`for Non-volatile Memory Applications," IEEE Electron Device Letters, vol. 13, no. 12,
`p. 624 - 626, Dec. 1992.
`
`
`31. H. Hwang, M. Y. Hao, J. Lee, V. Mathews, P. Fazan and C. Dennison, "Furnace N2O
`Oxidation Process for Submicron MOSFET Device Applications," Solid-State
`Electronics, vol. 36, p. 749 - 751, 1993.
`
`
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 6 of 64
`
`

`

`32. H. Hwang, J. Lee, P. Fazan and C. Dennison, "Hot-Carrier Reliability Characteristics
`of Narrow Width MOSFETs," Solid-State Electronics, Vol. 36, No. 4, p. 665 - 666,
`1993.
`
`
`33. B. Maiti and J. Lee, "A New Low-Thermal Budget Process for Ultrathin Oxynitride
`Dielectrics," Journal of Electronic Materials, 1992.
`
`
`34. J. Lin, W. Chen, S. Banerjee and J. Lee, "Cobalt Disilicide as a Dopant Diffusion
`Source for Polysilicon Gates in MOS Devices," Journal of Electronic Materials, vol.
`22, p. 667 - 673, 1993.
`
`
`35. W. Chen, J. Lin, S. Banerjee and J. Lee, "Thermal Stability and Dopant Drive-Out
`Characteristics of CoSi2 Polycide Gates," Journal of Applied Physics, vol. 73, p. 4712
`- 4714, May 1993.
`
`
`36. J. Lee, V. Chikarmane, C. Sudhama, and J. Kim, "Sputtered PZT Thin Films for
`Memory Applications," Journal of Integrated Ferroelectrics, vol. 3, 1993.
`
`
`37. C. Sudhama, J. Kim, J. Lee, W. Shepherd and E. Meyer, "The Effects of Lanthanum
`Doping on the Electrical Properties of Sol-Gel Derived Ferroelectric Lead Zirconate
`Titanate (PZT) for ULSI DRAM Applications," Journal of Vacuum Science and
`Technology, p. 1302 - 1309, July / Aug 1993.
`
`
`38. M. Y. Hao, H. Hwang and J. Lee, "Silicon-Implanted SiO2 for Non-volatile Memory
`Applications," Solid-State Electronics, vol. 36, p. 1321 - 1324, 1993.
`
`
`39. M. Y. Hao, H. Hwang and J. Lee, "Memory Effects of Silicon-Implanted Oxides for
`EEPROM Applications," Applied Physics Letters, vol. 62, No. 13, p. 1530 - 1532,
`March 1993.
`
`
`40. S. Batra, K. Picone, K. Park, S. Bhattacharya, S. Banerjee, J. Lee, M. Manning and C.
`Dennison, "Study of Lateral Non-Uniformity as a Function of Junction Depth in Ultra-
`Shallow Junctions and Its Effects on Leakage Behavior
`in As-Deposited
`Polycrystalline Si and Amorphous Si Diodes," Solid-State Electronics vol. 36, no. 7, p.
`955 - 960, 1993.
`
`
`41. J. Lee, C. Sudhama, J. Kim and R. Khamankar, (Invited Paper) "High Dielectric
`Constant Ferroelectric Thin Films for DRAM Applications", Extended Abstracts of
`International Conf. on Solid State Devices and Materials, p. 850 - 852, 1993.
`
`
`42. W. M. Chen, S. K. Banerjee, and J. C. Lee," Degradation mechanism and improvement
`of thermal stability of CoSi2/polycrystalline Si layers," Applied Physics Letters, vol.
`64, no. 12, p. 1505 - 1507, 1994.
`
`
`43. W. M. Chen, J. Lin, S. K. Banerjee, and J. C. Lee," Simultaneous Shallow-Junction
`Formation and Gate Doping p-channel Metal-Semiconductor-Oxide Field-Effect
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 7 of 64
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`

`

`Transistor Process Using Cobalt Silicide as a Diffusion/Doping Source," Applied
`Physics Letters, vol. 64, no. 3, p. 345 - 347, 1994.
`
`
`44. M. Y. Hao, B. Maiti, and J. Lee," Novel Process for Reliable Ultrathin Tunnel
`Dielectrics," Appl. Phys. Lett., vol.. 64, p. 2102 - 2104, April 1994.
`
`
`45. B. Jiang, C. Sudhama, R. Khamankar, J. Kim and J. Lee, "Effects of Nonlinear Storage
`Capacitor on DRAM READ/WRITE," IEEE Electron Device Letters, vol. 15, no. 4,
`p.126 - 128, April 1994.
`
`
`46. J. Kim, C. Sudhama, R. Khamankar, B. Jiang, J. Lee, P. Maniar, R. Moazzami, R. Jones
`and C. J. Mogab, "La Doped PZT Thin Films for Gigabit DRAM Technology," 1994
`Symposium on VLSI Tech. Digest, p. 151 - 152, 1994.
`
`
`47. M. Y. Hao, K. Lai, W. M. Chen, and J. Lee, " Surface Cleaning Effect on Dielectric
`Integrity for Ultrathin Oxynitrides Grown in N2O," Applied Physics Letters, vol. 65,
`no. 9, p. 1133 - 1135, August 1994.
`
`
`48. K. Lai, M. Y. Hao, C. Y. Hu, W. M. Chen, and J. Lee, " Effects of Surface Preparation
`on the Electrical and Reliability Properties of Ultrathin Thermal Oxide," IEEE Electron
`Device Letters, vol. ED-15, no. 11, p. 446 - 448, November, 1994.
`
`
`49. M. Y. Hao, W. M. Chen, K. Lai, M. Gardner, J. Fulford, and J. Lee, "Correlation of
`Dielectric Breakdown with Hole Transport for Ultrathin Thermal Oxides and N2O
`Oxynitrides," Applied Physics Letters, vol. 66, no. 9, p. 1126 - 1128, February 27,
`1995.
`
`
`50. R. Khamankar, J. Kim, C. Sudhama, B. Jiang, and J. Lee, "Effects of Electrical Stress
`Parameters on Polarization Loss in Ferroelectric PZT Thin Film Capacitors," Electron
`Device Letter, p. 130 - 132, April 1995.
`
`
`51. J. Lee, B. Jiang, R. Khamankar, and J. Kim, "Nonlinearity of Ferroelectric Capacitors
`on DRAM R/W Operations," Integrated Ferroelectrics, p. 319 - 328, 1995.
`
`
`52. W. M. Chen, M. Y. Hao, K. Lai, M. Gardner, J. Fulford, and J. Lee, " 'Turn-around'
`Effects of Stress-Induced Leakage Current of Ultrathin N2O-Annealed Oxides,"
`Applied Physics Letters, vol. 67, No. 5, p. 1 - 3, July 1995.
`
`
`53. Kafai Lai, Wei-Ming Chen, Ming-Yin Hao, Mark Gardner, Jim Fulford, Jack C. Lee,
`"'Turn-around' effects of stress-induced leakage current of ultrathin N2O-annealed
`oxides", Applied Physics Letters, vol. 67, no. 5, p. 673-5, Jul. 31, 1995.
`
`
`54. Kafai Lai, Kiran Kumar, Anthony I. Chou, and Jack C. Lee, "Plasma damage and
`photo-annealing effects of thin gate oxides and oxynitrides during O2 plasma
`exposure", IEEE Elec. Dev. Lett., vol. 17, no. 3, p. 82, Mar. 1996.
`
`
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 8 of 64
`
`

`

`55. Anthony I. Chou, Kafai Lai, Kiran Kumar, Mark Gardner, Jim Fulford, and Jack C.
`Lee, "Optimization of gate dopant concentration and microstructure for improved
`electrical and reliability characteristics of ultrathin oxides and N2O-oxynitrides",
`Applied Physics Letters, vol. 69, no. 7, p. 934, Aug. 12, 1996.
`
`
`56 C. Lin, A. Chou, K. Kumar, P. Chowdhury, and J. C. Lee, "Effect of BF2 implantation
`on ultra-thin gate oxide reliability" Appl. Phys. Lett., vol. 69, no. 11, p1591, Sep. 1996.
`
`
`57. C. Lin, A. Chou, K. Kumar, P. Chowdhury, and J. C. Lee, "Reliability of gate oxide
`grown on nitrogen-implanted Si substrate" Appl. Phys. Lett. Vol. 69, No. 24, 9 Dec.
`1996.
`
`
`58. K. Kumar, A. Chou, C. Lin, P. Choudhury, and J. C. Lee, "Optimization of sub 3 nm
`gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient", Appl.
`Phys. Lett. 70 (3), 20 January 1997.
`
`
`59. Prasenjit Chowdhury, Anthony I. Chou, Kiran Kumar, Chuan Lin and Jack C. Lee,
`"Improvement of Ultra-Thin Gate Oxide and Oxynitirde Integrity Using Fluorine
`Implantation Techniques," Applied Physics Letters 70 (1), January 6, 1997.
`
`
`60. A. Chou, K. Lai, K. Kumar, P. Chowdhury and J. Lee, "Modeling of Stress-Induced
`Leakage Current in Ultra-Thin Oxide with the Trap Assisted Tunneling Mechanism,"
`Applied Physics Lettes, vol. 70, no. 25, Pg. 3407, June 23, 1997.
`
`
`61. Byoung Hun Lee, Yongjoo Jeon,Keith Zawadzki, Wen-Jie Qi and Jack C. Lee, "Effect
`of interfacial layer growth on the electrical characteristics of thin titanium oxide films
`on silicon", Appl. Phys. Lett. Vol. 74, p. 3143, 1999.
`
`
`62. Tung-Sheng Chen, Venkatasubramani Balu, Shylaja Katakam, Jian-Hung Lee and Jack
`C. Lee, “Effects of Ir Electrodes on BST Thin Film Capacitors for High-Density
`Memory Application” IEEE Transactions on Electron Devices vol. 46, no. 12, p. 2304,
`Dec. 1999.
`
`
`63. Jian-Hung Lee, Razak Mohammedali, Venkatasubramani Balu, Jeong Hee Han, Sundar
`Gopalan, Chun-Hui Wong and Jack C. Lee “The Niobium Doping Effects on
`Resistance Degradation of Strontium Titanate Thin Film Capacitors”, Applied Physics
`Letters, vol. 75, no. 10, p. 1455, September 6, 1999.
`
`
`64. Sundar Gopalan, Chun-Hui Wong, Venkatasubramani Balu, Jian-Hung Lee, Jeong Hee
`Han, Razak Mohammedali, and Jack C. Lee, “Effects of Nb Doping on the
`Microstructure and Electrical Properties of Strontium Titanates Thin Films for
`Semiconductor Memory Applications”, Applied Physics Letters, vol. 75, no. 14, p.
`2123, October 4, 1999.
`
`
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 9 of 64
`
`

`

`65. T. Ngai, W. Qi, R. Sharma, J. Fretwell, X. Chen, J. Lee and S. Banerjee, “Electrical
`Properties of ZrO2 Gate Dielectric on SiGe,” Applied Physics Letters, vol. 76, no. 4, p.
`502, January 24, 2000.
`
`
`66. Laegu Kang, Byoung Hun Lee, Wen-Jie Qi, Yongjoo Jeon, Renee Nieh, Sundar
`Gopalan, Katsunori Onishi, and Jack C. Lee,” Electrical Characteristics of Highly
`Reliable Ultra-Thin Hafnium Oxide Gate Dielectric,” IEEE Electron Dev. Lett., vol.
`21, 4, p.181, 2000.
`
`
`67. Byoung Hun Lee, Laegu Kang, Renee Nieh, Wen-Jie Qi, and Jack C. Lee, "Thermal
`stability and electrical characteristics of Hafnium oxide gate dielectric reoxidized with
`rapid thermal annealing", Appl. Phys. Lett., 76, p.1926, 2000.
`
`
`68. A. Lucas, S. Gopalan, J. Lee, S. Kaushal, R. Niino and Y. Tada, “Ultrathin Gate
`Oxynitrides Grown Using Fast Ramp Vertical Furnace for Sub-130 Nanometer
`Technology,” Electrochemical and Solid-State Letters, vol. 3, no. 8, p. 389-391, August
`2000.
`
`
`69. Wen-Jie Qi, Renee Nieh, Easwar Dharmarajan, Byoung Hun Lee, Yongjoo Jeon, Laegu
`Kang, Katsunori Onishi, and Jack C. Lee, “Ultrathin zirconium silicate film with good
`thermal stability for alternative gate dielectric applications”, Appl. Phys. Lett., vol. 77,
`no.11, p. 1704-1706, Sept. 2000.
`
`
`
`70. Wen-Jie Qi, Renee Nieh, Byoung Hun Lee, Laegu Kang, Yongjoo Jeon, Aaron Lucas,
`and Jack C. Lee, "Electrical and reliability characteristics of ZrO2 deposited directly on
`Si for gate dielectric application", Appl. Phys. Lett., vol. 77, no. 20, p.3269, 2000.
`
`
`71. T. Ngai, W.J. Qi, R. Sharma, J.L. Fretwell, X. Chen, J.C. Lee, and S.K. Banerjee,
`“Transconductance Improvement in Surface-Channel SiGe pMOSFETs using ZrO2
`Gate Dielectric,” Applied Physics Letters, May 14, 2001.
`
`
`72. P.D. Kirsch, C. S. Kang, J. Lozano, J. C. Lee, J. G. Eckerdt, “Electrical and
`spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si (100),”
`Journal of Applied Physics, Volume 91, Number 7, pp. 1 – 11, 1 April 2002.
`
`
`73. H. Cho, C. Kang, K. Onishi, S. Gopalan, R. Nieh, R. Choi, S. Krishnan and Jack Lee,
`“Structural and Electrical Properties of HfO2 with Top Nitrogen Incorporated Layer,”
`IEEE Electron Device Letters, vol. 23, no. 5, p. 249, May 2002.
`
`
`74. S. Gopalan, K. Onishi, R. Nieh, C. Kang, R. Choi, J. Cho, S. Krishnan, and J. Lee,
`“Electrical and Physical Characteristics of Ultrathin Hafnium Silicate Films with
`Polycrystalline Silicon and TaN Gates,” Applied Physics Letters, vol. 80, no. 23, p.
`4416, June 10, 2002.
`
`
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`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 10 of 64
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`75. R. Nieh, R. Choi, S. Gopalan, K. Onishi, C. Kang, H. Cho, S. Krishnan and J. Lee,
`“Evaluation of Silicon Surface Nitridation Effects on Ultra-thin ZrO2 Gate
`Dielectrics,” Applied Physics Letters, vol. 81, no. 9, p. 1663, August 26, 2002.
`
`
`76. Chang Seok Kang, Hag-Ju Cho, Katsunori Onishi, Renee Nieh, Rino Choi, Sundar
`Gopalan, Sid Krishnan, Jeong H. Han, and Jack C. Lee, “Bonding states and electrical
`properties of ultrathin HfOxNy gate dielectrics”, Appl. Phys. Lett. 81, p2593,
`September 30, 2002.
`
`
`77. Chang Seok Kang, Katsunori Onishi, Laegu Kang, and Jack C. Lee, “Effects of Hf
`contamination on the properties of silicon oxide metal--oxide--semiconductor
`devices”, Appl. Phys. Lett. 81, p5018, December 23, 2002.
`
`
`78. Y. Kim, K. Onishi, C. Kang, H. Cho, R. Nieh, S. Gopalan, R. Choi, J. Han, S. Krishnan,
`and J. Lee, “Area Dependence of TDDB Characteristics for HfO2 Gate Dielectrics,”
`IEEE Electron Devices Letters, vol. 23, no. 10, p. 594, October 2002.
`
`
`79. Y. Fan, R. Nieh, J. Lee, G. Lucovsky, G. Brown, F. Register and S. Banerjee, “Voltage
`and Temperature Dependent Gate Capacitance and Current Model: Application to
`ZrO2 n-channel MOS Capacitor,” IEEE Tran. Electron Devices, vol. 49, no. 11, p.
`1969, November 2002.
`
`
`80. S. Mudanai, F. Li, S. Samavedam, R. Tobin, C. Kang, R. Nieh, L. Register, J. Lee, and
`S. Banerjee, “Interfacial Defect States in HfO2 and ZrO2 nMOS Capacitor,” IEEE
`Electron Devices Letters, vol. 23, no. 12, p. 728, December 2002.
`
`
`81. Y.H. Kim, K. Onishi, C. Kang, H. Cho, R. Choi, S. Krishnan, M. Akbar and J. Lee,
`“Thickness Dependence of Weibull Slopes of HfO2 Gate Dielectrics,” IEEE Electron
`Devices Letters, vol. 24, no. 1, p. 40, January 2003.
`
`
`82. Z. Shi, D. Onsongo, K. Onishi, J. Lee, and S. Banerjee, “Mobility Enhancement in
`Surface Channel SiGe PMOSFETs With HfO2 Gate Dielectrics,” IEEE Electron
`Device Letter, vol. 24, no. 1, p. 34, January 2003.
`
`
`83. K. Onishi, C. Kang, R. Choi, H. Cho, S. Gopalan, R. Nieh, S. Krishnan and J. Lee,
`“Improvement of Surface Carrier Mobility of HfO2 MOSFET’s by High-Temperature
`Forming Gas Annealing,” IEEE Trans. On Electron Devices, vol. 50, no. 2, p. 384 –
`390, February 2003.
`
`
`84. R. Nieh, C. Kang, H. Cho, K. Onishi, R. Choi, S. Krishnan, J. Han, Y. Kim, A. Shahriar
`and J. Lee, “Electrical Characterization and Material Evaluation of Nitrogen
`Incorporated ZrO2 (ZrOxNy) Gate Dielectric in TaN-gated NMOSFET’s with High
`Temperature Forming Gas Annealing,” IEEE Trans. On Electron Devices, vol. 50, no.
`2, p. 333 – 340, February 2003.
`
`
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 11 of 64
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`85. Rino Choi, Katsunori Onishi, Chang Seok Kang, Hag-Ju Cho, Y.H. Kim, Siddharth
`Krishnan, M. S. Akbar and Jack C. Lee, " Effects of Deuterium Anneal on MOSFETs
`with HfO2 Gate Dielectrics,” IEEE Electron Device Letter, vol. 24, no. 3, p. 144, March
`2003.
`
`
`86. Katsunori Onishi, Chang Seok Kang, Rino Choi, Hag-Ju Cho, Young Hee Kim,
`Siddharth Krishnan, Mohammad Akbar, and Jack C. Lee, “Performance of polysilicon
`gate HfO2 MOSFET’s on (100) and (111) silicon substrates,” IEEE Electron Device
`Letter, vol. 24, no. 4, p. 254, April 2003.
`
`
`87. M.S. Akbar, S. Gopalan, H.-J. Cho, K. Onishi, R. Choi, C.S. Kang, Y.H. Kim, J. Han,
`S. Krishnan, and J. C. Lee, “High Performance TaN/HfSiON/Si MOSCAP and
`MOSFET Prepared by Low Thermal Budget NH3 Post-Deposition Anneal,” Applied
`Physics Letters, vol. 82, no.11, pp.1757, March 17 2003
`
`
`88. K. Onishi, R. Choi, C. Kang, H. Cho, Y. Kim, R. Nieh, J. Han, S. Krishnan, M. Akbar,
`and J. Lee, “Bias-temperature Instabilities of Polysilicon Gate HfO2 MOSFET’s.”
`IEEE Trans. On Electron Devices, vol. 50, no. 6, p. 1517, June 2003.
`
`
`89. Chang Seok Kang, H.-J. Cho, R. Choi, K. Onishi, Y.H. Kim, M. S. Akbar, and J. C.
`Lee, “Characterization of resistivity and work function of sputtered-TaN film for gate
`electrode applications”, Journal of Vacuum Science and Technology, vol. 21, issue #5,
`p. 2026, September/October 2003.
`
`
`90. Y. H. Kim, and J. C. Lee, “Reliability Characteristics of high-k dielectrics” invited
`paper in the Microelectronics Reliability Journal, Volume 44, Issue 2, Pages 183-193,
`Feb. 2004.
`
`
`91. Chang Seok Kang, Hag-Ju Cho, Rino Choi, Young-Hee Kim, Chang Yong Kang, Se
`Jong Rhee, Changhwan Choi, Mohammad Shahariar Akbar, and Jack C. Lee “The
`Electrical and Material Characterization of Hafnium Oxynitride Gate Dielectrics with
`TaN-Gate Electrode” IEEE Transactions on Electron Devices, Vol. 51, No. 2, P220-
`227, FEBRUARY 2004.
`
`
`92. C.Y. Kang, Hag-Ju Cho, Rino Choi, Chang Seok Kang, Young Hee Kim, Se Jong
`Rhee, Chang Hwan Choi, Shahriar M. Akbar, and Jack C. Lee, "Effects of dielectric
`structure of HfO2 on carrier generation rate in Si substrate and channel mobility", App
`Phy. Lett., vol 84, 12, pp. 2148-2150, 2004.
`
`
`93. R. Jha, J. Gurganos, Y. H. Kim, R. Choi, J. Lee and V. Misra, “A Capacitance Based
`Methodology for Extracting Workfunction of Metal Electrodes on High-K Dielectrics,”
`IEEE Electron Device Letters, vol. 25, no. 6, p. 420, June 2004.
`
`
`94. Rino Choi, Chang Seok Kang, Hag-Ju Cho, Young-Hee Kim, Mohammad S. Akbar,
`and Jack C. Lee “Effects of high temperature forming gas anneal on the characteristics
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 12 of 64
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`of MOSFET with HfO2 gate stacks,” Applied Physics Letter, Vol. 84, Issue 24, p4839-
`4841, June 14, 2004.
`
`
`95. S. J. Rhee, C. Y. Kang, C. S. Kang, R. Choi, C. Choi, M. Akbar and J. Lee, “"Effect of
`Varying Interfacial Oxide and High-k Layer Thicknesses for HfO2 Metal Oxide
`Semiconductor Field Effect Transistor" Applied Physics Letter, Vol. 85, p1286, 2004.
`
`
`96. C.M. Osburn, S.A. Campbell, E. Eisenbraun, E. Garfunkel, T. Gustafson, A. Kingon,
`D.-L. Kwong, J. Lee, G. Lucovsky, T.P. Ma, J.P. Maria, V. Misra, G. Parsons, D.
`Schlom, and S. Stemmer, “Materials and Processes for High k Gate Stack”,
`Semiconductor Fabtech Magazine, 2004.
`
`
`97. Se Jong Rhee, Chang Yong Kang, Chang Seok Kang, Chang Hwan Choi, Rino Choi,
`Mohammad S. Akbar, and Jack C. Lee, "Threshold Voltage Instability Characteristics
`under Positive Dynamic Stress in Ultra Thin HfO2 Metal Oxide Semiconductor Field
`Effect Transistors," Applied Physics Letters, vol. 85, no. 15, p. 3184, October 2004.
`
`
`98. M. S Akbar, H. -J. Cho, R. Choi, C. S. Kang, C.Y. Kang, C. H. Choi, S. J. Rhee, Y. H.
`Kim and Jack C. Lee “Optimized NH3 Annealing Process for High Quality HfSiON
`Gate Oxide”, in IEEE Electron Device Letters, vol. 25 (7), pp. 465-467, 2004.
`
`
`99. Akbar, M.S.; Moumen, N.; Barnett, J.; Lee, B.-H.; Lee, J.C, "Mobility Improvement
`after HCI Post-Deposition Cleaning of High-k Dielectric A Potential Issue in Wet
`Etching of Dual Metal Gate Process Technology," IEEE Electron Devices Letters, vol.
`26, no. 3, p. 163, March 2005.
`
`
`100. Rino Choi, Se Jong Rhee, Jack C. Lee, Byoung Hun Lee, Gennadi Bersuker, "Charge
`trapping and detrapping characteristics in high-k gate dielectric under static and
`dynamic stress," Electron Dev. Lett. vol 26 (3), p197, 2005.
`
`
`101. M. S. Akbar, Naim Moumen, Joel Barnett, Johnny Sim and Jack C. Lee, “Effect of
`NH3 surface nitridation temperature on mobility of ultrathin atomic layer deposited
`HfO2”, Appl. Phys. Lett. 86 (2005).
`
`
`102. C. H. Choi, C.S. Kang, C.Y. Kang, S.J. Rhee, M.S. Akbar, S.A. Krishnan, M.
`Zhang, and Jack C. Lee, "Positive Bias Temperature Instability Effects of
`Hf-Based nMOFETs with Various Nitrogen and Silicon Profiles", IEEE Electron
`Device Letter (EDL), Vol., 26, No.1, p32, 2005.
`
`
`103. Akbar, M.S.; Choi, C.H.; Rhee, S.J.; Krishnan, S.A.; Kang, C.Y.; Zhang, M.H.; Lee,
`T.; Ok, I.J.; Zhu, F.; Kim, H.-S.; Lee, J.C., “Electrical Performance and Reliability
`Improvement by Using Compositionally Varying Bi-Layer Structure of PVD HfSixOy
`Dielectric,” IEEE Electron Devices Letters, vol. 26, no. 3, p. 166, March 2005.
`
`
`104. Chang Yong Kang, Pat Lysaght, Rino Choi, Byoung Hun Lee, Chang Seok Kang, Se
`Jong Rhee, Chang Hwan Choi, Shahriar M. Akbar
`and
`Jack C.
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1022, IPR2021-00704
`Page 13 of 64
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`Lee, “Nickel-Silicide Phase Effects on Flatband Voltage Shift and Equivalent Oxide
`Thickness Decrease of Hafnium Silicon Oxynitride Metal Silicon Oxide Capacitors,”
`Applied Physics Letter, vol. 86, article no. 222906, 2005.
`
`
`105. Chang Yong Kang, Se Jong Rhee, Chang Hwan Choi, Chang Seok Kang, Rino Choi,
`Mohammad S. Akbar, Manhong Zang, Siddarth A. Krishnan and Jack C. Lee, “Effects
`of Nitrogen-Incorporated Interface Layer on the Transient Characteristics of Hafnium
`Oxide n-Metal Oxide Semiconductor Field Effect Transistors,” Applied Physics Letter,
`vol. 86, article no. 1236506, 2005.
`
`
`106. Chang Yong Kang, Se Jong Rhee, Chang Hwan Choi, Shariar M. Abkar, Manhong
`Zhang, Taekhwi Lee, Injo Ok and Jack C. Lee, “Effects of Tantalum Penetration
`through Hafnium Oxide Layer on Carrier Generation Rate in Silicon Substrate and
`Carrier Mobility Degradation,” Applied Physics Letter, vol. 86, article no. 012901,
`2005.
`
`
`107. Changhwan Choi, Chang Yong Kang, Se Jong Rhee, Mohammad Shahariar