(19) United States
`(12) Patent Application Publication (10) Pub. No.: US 2012/0302146 A1
`Sung
`(43) Pub. Date:
`Nov. 29, 2012
`
`US 201203 02146A1
`
`(54) CMP PADDRESSER HAVING LEVELED TIPS
`AND ASSOCATED METHODS
`
`(52) U.S. Cl. .............. 451/443; 428/143; 51/309; 51/298
`
`(76) Inventor:
`(21) Appl. No.:
`(22) Filed:
`
`Chien-Min Sung, Tansui (TW)
`13/479,148
`May 23, 2012
`
`Related U.S. Application Data
`(60) Provisional application No. 61/489,074, filed on May
`23, 2011.
`
`O
`O
`Publication Classification
`
`(51) Int. Cl.
`B24B 53/12
`B24D 3/06
`
`(2006.01)
`(2006.01)
`
`
`
`34
`
`ABSTRACT
`(57)
`CMP paddressers having leveled tips and associated methods
`are provided. In one aspect, for example, a CMP paddresser
`can include a matrix layer and a monolayer of a plurality of
`superabrasive particles embedded in the matrix layer, where
`each Superabrasive particle in the monolayer protrudes from
`the matrix layer. The difference in the protrusion distance
`between the highest protruding tip and the next highest pro
`truding tip of the monolayer of Superabrasive particles is less
`than or equal to about 20 microns, and the difference in
`protrusion distance between the highest 1% of the protruding
`tips of the monolayer of superabrasive particles are within
`about 80 microns or less.
`
`32
`38
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`Patent Application Publication
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`Nov. 29, 2012 Sheet 2 of 2
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`US 2012/0302146 A1
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`US 2012/0302146 A1
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`Nov. 29, 2012
`
`CMIP PADDRESSER HAVINGLEVELED TIPS
`AND ASSOCATED METHODS
`
`PRIORITY DATA
`0001. This application claims the benefit of U.S. Provi
`sional Patent Application Ser. No. 61/489,074, filed on May
`23, 2011, which is incorporated herein by reference in its
`entirety.
`
`BACKGROUND OF THE INVENTION
`0002 The semiconductor industry currently spends in
`excess of one billion U.S. dollars each year manufacturing
`silicon wafers that must exhibit very flat and smooth surfaces.
`Known techniques to manufacture Smooth and even-surfaced
`silicon wafers are plentiful. The most common of these
`involves the process known as Chemical Mechanical Polish
`ing (CMP) which includes the use of a polishing pad in
`combination with an abrasive slurry. Of central importance in
`all CMP processes is the attainment of high performance
`levels in aspects Such as uniformity of polished wafer,
`smoothness of the IC circuitry, removal rate for productivity,
`longevity of consumables for CMP economics, etc.
`
`SUMMARY OF THE INVENTION
`0003. The present disclosure provides CMP paddressers
`and associated methods thereof. In one aspect, for example, a
`CMP paddresser can include a matrix layer and a monolayer
`of a plurality of superabrasive particles embedded in the
`matrix layer, where each Superabrasive particle in the mono
`layer protrudes from the matrix layer. The difference in the
`protrusion distance between the highest protruding tip and the
`next highest protruding tip of the monolayer of Superabrasive
`particles can be less than or equal to about 20 microns, and the
`difference in protrusion distance between the highest 1% of
`the protruding tips of the monolayer of Superabrasive par
`ticles are within about 80 microns or less. In one specific
`aspect, a rigid Support is coupled to the matrix layer.
`0004. In another aspect, the difference in protrusion dis
`tance between the highest protruding tip and the next highest
`protruding tip of the monolayer of Superabrasive particles is
`less than or equal to about 15 microns. In yet another aspect,
`the difference in protrusion distance between the highest
`protruding tip and the next highest protruding tip of the mono
`layer of Superabrasive particles is less than or equal to about
`10 microns. In a further aspect, the difference in protrusion
`distance between the highest 10 protruding tips of the mono
`layer of superabrasive particles are within about 30 microns
`or less. In another aspect, the difference in protrusion distance
`between the highest 100 protruding tips of the monolayer of
`superabrasive particles are within about 50 microns or less. In
`yet another aspect, the difference in protrusion distance
`between the highest 1% of the protruding tips of the first
`monolayer of superabrasive particles are within about 50
`microns or less. In another aspect, the difference in protrusion
`distance between the highest protruding tip and the second
`highest protruding tip is less than or equal to about 10
`microns. In yet another aspect, the difference in protrusion
`distance between the highest protruding tip and the 10' high
`est protruding tip is less than or equal to about 20 microns. In
`a further aspect, the difference in protrusion distance between
`the highest protruding tip and the 100" highest protruding tip
`is less than or equal to about 40 microns. In another aspect, the
`
`highest protruding tip protrudes from the matrix layer to a
`height greater than or equal to about 50 microns.
`0005. In another aspect, a CMP paddresser is provided.
`Such a dresser can include a first monolayer of Superabrasive
`particles disposed on one side of a metal Support layer and a
`second monolayer of Superabrasive particles disposed on the
`metal Support layer on an opposite side from the first mono
`layer. The Superabrasive particles of the second monolayer
`are positioned to have Substantially the same distribution as
`the Superabrasive particles of the first monolayer, and a rigid
`Support is coupled to the second monolayer of Superabrasive
`particles opposite the first monolayer.
`0006. In yet another aspect, a method of making a CMP
`pad dresser includes disposing a first monolayer of Supera
`brasive particles on a metal Support layer and disposing a
`second monolayer of Superabrasive particles on the metal
`Support layer on a side opposite the first monolayer. The
`Superabrasive particles of the second monolayer are posi
`tioned to have substantially the same distribution as the
`superabrasive particles of the first monolayer. The method
`further includes bonding the first monolayer of superabrasive
`particles and the second monolayer of Superabrasive particles
`to the metal Support layer Such that symmetrical forces due to
`the substantially similar distribution between the first mono
`layer and the second monolayer precludes Substantial warp
`ing of the metal Support layer. In one aspect, the method can
`further include coupling the second monolayer of Superabra
`sive particles to a rigid Support.
`0007. In one aspect, the bonding of at least one of the first
`monolayer and the second monolayer is by brazing with a
`braze material. In another aspect, the bonding of at least one
`of the first monolayer and the second monolayer is underheat
`and pressure. In one specific aspect, the heat and pressure
`bonds at least one of the first monolayer and the second
`monolayer directly to the metal Support layer. In another
`specific aspect, the bonding of at least one of the first mono
`layer and the second monolayer further includes disposing a
`sintering compound on the metal Support layer in contact with
`at least one of the first monolayer and the second monolayer
`and sintering the sintering compound to bond the at least one
`of the first monolayer and the second monolayer to the metal
`Support layer. In one specific aspect, the method further
`includes infiltrating the sintering compound with a braZe
`material during bonding.
`0008. In yet another aspect, a method of minimizing
`warpage of a CMP pad dresser during manufacture is pro
`vided. Such a method can include Substantially equalizing
`warping forces on opposing sides of a metal Support layer
`during bonding of a plurality of Superabrasive particles
`thereto, wherein warpage of the Support layer is minimized
`during bonding due to the equalized forces on opposing sides.
`In one aspect, Substantially equalizing forces includes arrang
`ing the plurality of Superabrasive particles on opposing sides
`of the support layer such that the plurality of superabrasive
`particles has substantially the same distribution on either side
`of the Support layer to Substantially equalize warping forces
`during bonding.
`0009. In a further aspect, a CMP paddresser is provided.
`Such a dresser can include a plurality of Superabrasive par
`ticles arranged as a working Surface, wherein the difference in
`protrusion distance between the highest protruding tip and the
`second highest protruding tip is less than or equal to about 10
`microns, the difference in protrusion distance between the
`highest protruding tip and the 10" highest protruding tip is
`
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`less than or equal to about 20 microns, the difference in
`protrusion distance between the highest protruding tip and the
`100" highest protruding tip is less than or equal to about 40
`microns, and the highest protruding tip has a protrusion dis
`tance of greater than or equal to about 50 microns.
`0010. There has thus been outlined, rather broadly, various
`features of the invention so that the detailed description
`thereofthat follows may be better understood, and so that the
`present contribution to the art may be better appreciated.
`Other features of the present invention will become clearer
`from the following detailed description of the invention,
`taken with the accompanying claims, or may be learned by the
`practice of the invention.
`
`BRIEF DESCRIPTION OF THE DRAWINGS
`0011
`FIG. 1 is a schematic side view of a CMP paddresser
`in accordance with an embodiment of the present invention;
`0012 FIG. 2 is a schematic side view of a CMP paddresser
`in accordance with an embodiment of the present invention;
`0013 FIG.3 is a schematic side view of a CMP paddresser
`in accordance with an embodiment of the present invention;
`0014 FIG. 4 is a schematic side view of a CMP paddresser
`in accordance with an embodiment of the present invention;
`and
`0015 FIG.5is a schematic side view of a CMP paddresser
`in accordance with an embodiment of the present invention;
`0016. It will be understood that the above figures are
`merely for illustrative purposes in furthering an understand
`ing of the invention. Further, the figures are not drawn to
`scale, thus dimensions, particle sizes, and other aspects may,
`and generally are, exaggerated to make illustrations thereof
`clearer. Therefore, departure can be made from the specific
`dimensions and aspects shown in the figures in order to pro
`duce the heat spreaders of the present invention.
`
`DETAILED DESCRIPTION
`0017. Before the present invention is disclosed and
`described, it is to be understood that this invention is not
`limited to the particular structures, method steps, or materials
`disclosed herein, but is extended to equivalents thereof as
`would be recognized by those ordinarily skilled in the rel
`evant arts. It should also be understood that terminology
`employed herein is used for the purpose of describing par
`ticular embodiments only and is not intended to be limiting.
`0018. It must be noted that, as used in this specification
`and the appended claims, the singular forms “a” “an and,
`“the include plural referents unless the context clearly dic
`tates otherwise. Thus, for example, reference to “a diamond
`particle' includes one or more of such particles and reference
`to “the layer includes reference to one or more of such layers.
`
`DEFINITIONS
`0019. In describing and claiming the present invention, the
`following terminology will be used in accordance with the
`definitions set forth below.
`0020. As used herein, the terms “conditioner” and
`“dresser can be used interchangeably, and refer to a tool used
`to condition or dress a pad, Such as a CMP pad.
`0021. As used herein, “dressing segment” refers to a dress
`ing or conditioning element of a CMP paddresser. Dressing
`segments are utilized in the present invention to carry Supera
`brasive particles having leveled tips. Thus Superabrasive par
`ticles are introduced into a CMP paddresser by the incorpo
`
`ration of multiple dressing segments. It should be noted that a
`variety of techniques of attaching the dressing segments to the
`Substrates, and a variety of techniques of attaching the Supera
`brasive particles to the dressing segments, are discussed
`herein. It is to be understood that all of these various attach
`ment mechanisms can be used interchangeably herein: that is,
`if a method of attaching a dressing segment to a substrate is
`discussed herein, the method of attachment discussed can
`also be used to attach a Superabrasive particles to a dressing
`segment. For any particular CMP pad dresser being dis
`cussed, however, it is understood that attachment methods of
`the Superabrasive particles to the dressing segments can differ
`from, or can be the same as, the method used to attach the
`dressing segments to the pad conditioner Substrate.
`0022. As used herein, “superabrasive' may be used to
`refer to any crystalline, or polycrystalline material, or mixture
`of such materials which has a Mohr’s hardness of about 8 or
`greater. In some aspects, the Mohr’s hardness may be about
`9.5 or greater. Such materials include but are not limited to
`diamond, polycrystalline diamond (PCD), cubic boron
`nitride (cEN), polycrystalline cubic boron nitride (PcBN),
`corundum and Sapphire, as well as other Superabrasive mate
`rials known to those skilled in the art. Superabrasive materials
`may be incorporated into the present invention in a variety of
`forms including particles, grits, films, layers, pieces, seg
`ments, etc. In some cases, the Superabrasive materials of the
`present invention are in the form of polycrystalline Supera
`brasive materials, such as PCD and PcEBN materials.
`0023. As used herein, “organic material” refers to a semi
`Solid or Solid complex or mix of organic compounds.
`“Organic material layer and “organic matrix” may be used
`interchangeably, and refer to a layer or mass of a semisolid or
`Solid complex or mix of organic compounds, including resins,
`polymers, gums, etc. The organic material can be a polymer
`or copolymer formed from the polymerization of one or more
`monomers. In some cases, such organic material can be adhe
`S1V.
`0024. As used herein, the process of "brazing” is intended
`to refer to the creation of chemical bonds between the carbon
`atoms of the Superabrasive particles/materials and the braZe
`material. Further, “chemical bond' means a covalent bond,
`such as a carbide or boride bond, rather than mechanical or
`weaker inter-atom attractive forces. Thus, when "brazing” is
`used in connection with Superabrasive particles a true chemi
`cal bond is being formed. However, when "brazing” is used in
`connection with metal to metal bonding the term is used in the
`more traditional sense of a metallurgical bond. Therefore,
`brazing of a Superabrasive segment to a tool body does not
`necessarily require the presence of a carbide former.
`0025. As used herein, “particle' is as used herein in con
`nection with diamond particles, and refers to a particulate
`form of diamond. Such particles may take a variety of shapes,
`including round, oblong, square, euhedral, etc., can be either
`single crystal or polycrystalline, and can have a number of
`mesh sizes. As is known in the art, "mesh' refers to the
`number of holes per unit area as in the case of U.S. meshes.
`All mesh sizes referred to herein are U.S. mesh unless other
`wise indicated. Further, mesh sizes are generally understood
`to indicate an average mesh size of a given collection of
`particles since each particle within a particular “mesh size”
`may actually vary over a small distribution of sizes.
`0026. As used herein, “sharp portion” means any narrow
`portion to which a crystal or particle may come, including but
`not limited to corners, apexes, ridges, edges, obelisks, and
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`other protrusions. In some cases, corners and/or apexes are
`formed at the convergence of more than two faces of the
`particle or crystal, or other body, disposed in intersecting
`planes. In other aspects, edges and/or ridges may beformed at
`the convergence of two or at least two faces of the particle or
`crystal, or other body, disposed in intersecting planes. In
`Some aspects, “sharp portion” can include a portion that is
`broken, chipped, cracked, jagged, and the like. In some
`aspects, degrees of sharpness can be correlated with the geo
`metric angle formed by the particle, crystal, or other body, at
`the location in question. In some aspects, an angle of 90
`degrees or less can be considered sharp. In other aspects, an
`angle of 60 degrees or less can be considered sharp. In yet
`other aspects, and angle of 45 degrees or less, or 30 degrees or
`less can be considered to be sharp.
`0027. As used herein, “peripherally located,” “peripheral
`location' and the like, mean any particle of a dresser that is
`located in an area that originates at the leading edge or outer
`rim of a dresser and extends inwardly towards the center for
`up to about 90% of the radius of the dresser. In some aspects,
`the area may extend inwardly from about 20% to 90% of the
`radius. In other aspects, the area may extend in to about 50%
`of the radius. In yet another aspect, the area may extend in to
`about 33% of the radius of a dresser (i.e. 66% away from the
`center).
`0028. As used herein, “working end” refers to an end of a
`particle which is oriented towards the CMP pad and during a
`dressing operation makes contact with the pad. Most often the
`working end of a particle will be distal from a substrate to
`which the particle is attached.
`0029. As used herein, “attitude” means the position or
`arrangement of a Superabrasive particle in relation to a
`defined surface. Such as a Substrate to which it is attached, or
`a CMP pad to which it is to be applied during a work opera
`tion. For example, a Superabrasive particle can have an atti
`tude that provides a specific portion of the particle in orien
`tation toward a CMP pad.
`0030. As used herein, “sintering refers to the joining of
`two or more individual particles to form a continuous Solid
`mass. The process of sintering involves the consolidation of
`particles to at least partially eliminate Voids between par
`ticles.
`0031. The term “metallic refers to both metals and met
`alloids. Metals include those compounds typically consid
`ered metals found within the transition metals, alkali and
`alkali earth metals. Examples of metals are Ag, Au, Cu, Al.
`and Fe. Metalloids include specifically Si, B, Ge, Sb, As, and
`Te. Metallic materials also include alloys or mixtures that
`include metallic materials. Such alloys or mixtures may fur
`ther include additional additives. In the present invention,
`carbide formers and carbon wetting agents may be included
`as alloys or mixtures, but are not anticipated to be the only
`metallic component. Examples of Such carbide formers are
`Sc.Y. Ti, Zr, Hf, V, Nb, Cr, Mo, Mn,Ta, W, and Tc. Examples
`of carbon wetting agents are Co, Ni, Mn, and Cr.
`0032. As used herein, “infiltrating” refers to a situation
`where a material is heated to its melting point and then flows
`as a liquid through the interstitial Voids between particles.
`0033. As used herein, the term “substantially refers to the
`complete or nearly complete extent or degree of an action,
`characteristic, property, state, structure, item, or result. For
`example, an object that is “substantially enclosed would
`mean that the object is either completely enclosed or nearly
`completely enclosed. The exact allowable degree of deviation
`
`from absolute completeness may in Some cases depend on the
`specific context. However, generally speaking the nearness of
`completion will be so as to have the same overall result as if
`absolute and total completion were obtained.
`0034. The use of “substantially” is equally applicable
`when used in a negative connotation to refer to the complete
`or near complete lack of an action, characteristic, property,
`state, structure, item, or result. For example, a composition
`that is “substantially free of particles would either com
`pletely lack particles, or so nearly completely lack particles
`that the effect would be the same as if it completely lacked
`particles. In other words, a composition that is “substantially
`free of an ingredient or element may still actually contain
`Such item as long as there is no measurable effect thereof.
`0035. As used herein, the term “about is used to provide
`flexibility to a numerical range endpoint by providing that a
`given value may be “a little above' or “a little below the
`endpoint.
`0036. As used herein, a plurality of items, structural ele
`ments, compositional elements, and/or materials may be pre
`sented in a common list for convenience. However, these lists
`should be construed as though each member of the list is
`individually identified as a separate and unique member.
`Thus, no individual member of such list should be construed
`as a de facto equivalent of any other member of the same list
`solely based on their presentation in a common group without
`indications to the contrary.
`0037 Concentrations, amounts, and other numerical data
`may be expressed or presented herein in a range format. It is
`to be understood that such a range format is used merely for
`convenience and brevity and thus should be interpreted flex
`ibly to include not only the numerical values explicitly recited
`as the limits of the range, but also to include all the individual
`numerical values or Sub-ranges encompassed within that
`range as if each numerical value and Sub-range is explicitly
`recited. As an illustration, a numerical range of “about 1 to
`about 5” should be interpreted to include not only the explic
`itly recited values of about 1 to about 5, but also include
`individual values and Sub-ranges within the indicated range.
`Thus, included in this numerical range are individual values
`Such as 2, 3, and 4 and Sub-ranges such as from 1-3, from 2-4,
`and from 3-5, etc., as well as 1, 2, 3, 4, and 5, individually.
`This same principle applies to ranges reciting only one
`numerical value as a minimum or a maximum. Furthermore,
`Such an interpretation should apply regardless of the breadth
`of the range or the characteristics being described.
`0038. The Invention
`0039. The present disclosure generally provides CMP pad
`dressers and associated methods that can be utilized in con
`ditioning (e.g., Smoothing, polishing, dressing) a CMP pad.
`Pad conditioners of the present invention can be advanta
`geously utilized, for example, in dressing CMP pads that are
`used in polishing, finishing or otherwise affecting semicon
`ductor materials. Specifically, the present disclosure concerns
`CMP pad dressers having superabrasive particles with sub
`stantially leveled tips. Traditional CMP paddresser manufac
`turing methods, even many of those describing techniques for
`leveling Superabrasive particle tips prior to fixation, generally
`contain significant variation in tip height across the Surface of
`the dresser. Often, the superabrasive particles are affixed to
`the CMP pad dresser support in a manner that disrupts any
`leveling that has occurred. For example, fixation techniques
`that utilize high heat and/or pressure can cause warping of the
`dresser Support as the dresser cools. Thus, unless steps are
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`taken to avoid Such warpage, Superabrasive particles are not
`maintained in their leveled state following cooling of the
`dresser. This can be particularly problematic with brazing
`techniques.
`0040. Accordingly, minimizing the warpage of the metal
`Support layer can maintain a greater degree of leveling of
`superabrasive particle tips in the finished tool. When heat
`and/or pressure are used to make a Superabrasive tool,
`warpage of the metal Support layer can cause great variations
`in tip height level, even for those particles that were leveled
`prior to heating and/or applying pressure. By distributing the
`warpage forces equally or Substantially equally on both sides
`of the metal Support layer through the arrangement of the
`superabrasive particles, these forces effectively cancel each
`other with respect to the degree of warping occurring in the
`metal Support layer, thus also minimizing the relative height
`movement of the superabrasive particles relative to one
`another.
`0041. The present CMP pad dressers include a layer of
`Superabrasive particles having Substantially leveled tips
`across the working surface of the finished CMP paddresser. A
`variety of techniques can be utilized to maintain tip leveling,
`and any Such technique is considered to be within the present
`Scope. A few non-limiting examples of Such techniques are
`described below.
`0042. In one aspect, as is shown in FIG. 1, a CMP pad
`dresser 10 includes a monolayer of a plurality of superabra
`sive particles 12 embedded in a matrix layer 14, such that each
`superabrasive particle in the monolayer protrudes from the
`matrix layer. The difference in protrusion distance 16
`between the highest protruding tip 17 and the next highest
`protruding tip 18 of the monolayer of superabrasive particles
`is less than or equal to about 20 microns. In some aspects, the
`protrusion difference may be less than or equal to about 50
`microns. Additionally, the difference in protrusion distance
`between the highest 1% of the protruding tips of the first
`monolayer of superabrasive particles are within about 80
`microns or less. In other words, for the 1% of the plurality of
`Superabrasive particles that have the highest protruding tips,
`the variance in protrusion distance for that 1% is less than or
`equal to about 80 microns. Thus, the two highest protruding
`superabrasive particle tips protrude to within about 20
`microns or less of each other, and in addition, the highest
`protruding 1% of Superabrasive particle tips protrude to
`within about 80 microns or less of each other. In another
`aspect, the difference in protrusion distance between the
`highest protruding tip and the next highest protruding tip of
`the monolayer of Superabrasive particles is less than or equal
`to about 15 microns. In yet another aspect, the difference in
`protrusion distance between the highest protruding tip and the
`next highest protruding tip of the monolayer of Superabrasive
`particles is less than or equal to about 10 microns. In a further
`aspect, the difference in protrusion distance between the
`highest 1% of the protruding tips of the first monolayer of
`superabrasive particles are within about 70 microns or less. In
`yet another aspect, the difference in protrusion distance
`between the highest 1% of the protruding tips of the first
`monolayer of superabrasive particles are within about 50
`microns or less. In another aspect, and in addition to the
`protrusion variance of the highest two protruding tips, the
`difference in protrusion distance between the highest 10 pro
`truding tips of the monolayer of Superabrasive particles are
`within about 30 microns or less. In yet another aspect, the
`difference in protrusion distance between the highest 100
`
`protruding tips of the monolayer of Superabrasive particles
`are within about 50 microns or less. Additionally, in one
`aspect, the rigid support can be coupled to the matrix layer
`(not shown).
`0043. In another aspect, the difference in protrusion dis
`tance the difference in protrusion distance between the high
`est protruding tip and the second highest protruding tip is less
`than or equal to about 10 microns. In yet another aspect, the
`difference in protrusion distance between the highest protrud
`ing tip and the 10" highest protruding tip is less than or equal
`to about 20 microns. In a further aspect, the difference in
`protrusion distance between the highest protruding tip and the
`100" highest protruding tip is less than or equal to about 40
`microns. In yet a further aspect, the highest protruding tip
`protrudes from the matrix layer to a height greater than or
`equal to about 50 microns. In another aspect, the highest
`protruding tip has a protrusion distance of greater than or
`equal to about 50 microns.
`0044. It is noted that the recited protrusion distances can
`include a distribution across the entire monolayer Surface or a
`discrete area or segment of the monolayer. For example, the
`highest 1% of protruding tips can be located around the
`periphery of the monolayer. In another example, discrete
`regions of leveled Superabrasive particle tips can be located
`within a larger area of Superabrasive particles having a lower
`protrusion distance than the leveled portion. It is also contem
`plated that the monolayer can include multiple regions or
`segments of Superabrasive particles that are leveled as
`described, within a larger area of superabrasive particles hav
`ing a lower protrusion distance.
`0045 Various methods can be utilized to measure supera
`brasive particle tip height to determine the difference in pro
`trusion distance between tips. As such, any method for mak
`ing such a determination is considered to be within the present
`scope. It should be noted that for the purposes of the present
`disclosure, the term “protrusion” refers to the height of a
`particle relative to some reference point. Techniques for Such
`measurements can include direct measurements of the tip
`heights relative to a reference point Such as, for example, the
`highest particle tip, a Surface of a rigid support, the bottom
`surface of the matrix, etc. Measurements of particle height
`from the surface of the matrix material can be problematic,
`however, due to the irregular nature of Such materials due to
`wicking around the Superabrasive particles. In those cases
`whereby the matrix material is uniform, such a surface may
`be used to determine particle height. Additionally, a relative
`protrusion or height difference between two particles would
`be the difference in the heights between these particles mea
`Sured from a common reference point. Furthermore, in some
`cases the Superabrasive particles may lie along a slope, cur
`Vature, or some other arrangement that is not parallel to the
`metal Support layer. In these cases, the protrusion height
`would be normalized against the slope, curvature, or other
`arrangement so that the relative protrusion height difference
`between particles can be measured in the absence of the slope,
`curvature, etc. It should be noted that superabrasive particle
`tip height leveling can, in Some cases, be independent from
`the positioning or patterning of the Superabrasive particles
`across the surface of the dresser.
`0046. One example of a direct measurement technique can
`include an optical scanning process to evaluate Superabrasive
`particle tip positions. In one such process, an optical scanner
`can scan the surface of the CMP paddresser to determine the
`height of the superabrasive particle tips relative to a fixed
`
`Page 7 of 13
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`KINIK EXHIBIT 1010
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`US 2012/0302146 A1
`
`Nov. 29, 2012
`
`point. For example, the scanner can scan downward in space
`toward the dresser until the highest tip is located. The highest
`tip can then be set to the reference point, and the Scanner can
`continue scanning in a direction toward the dresser measuring
`the distance from the reference point to each superabrasive
`particle tip across the Surface of the dresser. Accordingly, the
`difference in protrusion distance between all of the supera
`brasive particles across the dresser can be directly measured.
`0047. Furthermore, measurement techniques can also
`include indirect measurements, such as, for example, apply
`ing the diamond monolayer to a deformable Substrate that
`deforms relative to the protrusion distance of the particle tips.
`The diamond monolayer can be pressed into the deformable
`substrate and/or moved across the deformable substrate to
`fo