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`US 20060278992Al
`
`c19) United States
`c12) Patent Application Publication
`Trezza et al.
`
`c10) Pub. No.: US 2006/0278992 Al
`Dec. 14, 2006
`(43) Pub. Date:
`
`(54) POST & PENETRATION
`INTERCONNECTION
`
`(52) U.S. Cl. ............................................ 257/777; 438/106
`
`(76)
`
`Inventors: John Trezza, Nashua, NH (US); John
`Callahan, Wilmington, MA (US);
`Gregory Dudoff, Amherst, NH (US)
`
`(57)
`
`ABSTRACT
`
`Correspondence Address:
`MORGAN & FINNEGAN, L.L.P.
`3 WORLD FINANCIAL CENTER
`NEW YORK, NY 10281-2101 (US)
`
`(21) Appl. No.:
`
`11/329,556
`
`(22) Filed:
`
`Jan. 10, 2006
`
`Related U.S. Application Data
`
`(60) Provisional application No. 60/690,759, filed on Jun.
`14, 2005.
`
`Publication Classification
`
`(51)
`
`Int. Cl.
`HOJL 21/00
`
`(2006.01)
`
`A method of physically and electrically joining two chips to
`each other involves aligning an electrically conductive con(cid:173)
`tact of a first chip with a corresponding electrically conduc(cid:173)
`tive contact on a second chip, the electrically conductive
`contact of the first chip being a rigid material and the
`electrically conductive contact of the second chip being a
`material that is malleable, bringing the aligned electrically
`conductive contact of the first chip into contact with the
`corresponding electrically conductive contact on the second
`chip, elevating the contact of the chips to a temperature that
`is below a liquidus temperature for both the rigid material
`and the material that is malleable while applying pressure to
`the chips so as to cause the rigid material to penetrate the
`malleable material and form an electrically conductive con(cid:173)
`nection, and, following the forming of the electrically con(cid:173)
`ductive connection, cooling the contacts to an ambient
`temperature.
`
`12504
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`::··········mmmmmmmmmm
`
`Daughter
`Wafer 2
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`SAMSUNG EXHIBIT 1006
`Samsung v. Trenchant
`Case IPR2021-00258
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 1 of 122
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`US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 2 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 3 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 4 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 5 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 6 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 7 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 8 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 9 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 10 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 11 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 12 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 13 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 14 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 15 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 16 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 19 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 21 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 22 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 24 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 26 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 27 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 28 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 29 of 122
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`Patent Application Publication Dec. 14, 2006 Sheet 30 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 31 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 32 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 33 of 122 US 2006/0278992 Al
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`Patent Application Publication Dec. 14, 2006 Sheet 34 of 122 US 2006/0278992 Al
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`FC 150
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`FIG. 45
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`Wafer Size: 2"
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`TACK
`Alignment Time: 2 minutes
`Pressure/heat time: 1 minute
`Unload Time:
`0.5 minute
`Total per-die time 3.5 minutes
`
`Fuse Time: NIA
`
`XX= Isotherm Temperature
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 35 of 122
`
`US 2006/0278992 Al
`
`Datacon Slow Stage
`1 to 3kg Pressure at tack
`Heat to 340°C to 360°C at tack
`
`Less technical fuse complexity +
`
`Datacon Fast Stage
`I to 3kg pressure at tack
`Heat to 320°C at tack
`Greater technical fuse complexity
`
`(pressure; environment) +
`
`Fixed at 230°C
`Daughter Pressure: 3000g
`Daughter Temp; to 360°C
`Mother Temp: FIXED 230°C
`Max Wafer Size: 8"
`
`TACK
`Alignment Time: 0.02 min
`Pressure/heat time: 0.6 min
`Unload Time:
`0.02
`Total per-die time 0.64 minutes
`
`Fuse Time: Anneal-not 'true'
`'deep fuse' needed
`
`Lower risk tack & fuse- put lots of time
`on tack to de-risk fuse
`
`Fixed at 230°C
`
`Daughter Pressure: 3000g
`Daughter Temp; to 320°C
`Mother Temp: FIXED 230°C
`Max Wafer Size: 8"
`
`TACK
`Alignment Time: 0.02 min
`Pressure/heat time: 0.04 min
`Unload Time:
`0.02
`Total per-die time 0.08 minutes
`
`Fuse Time: 10 min (per wafer)
`
`Decrease time on tack to speed throughput
`
`There is a Continuum from stage 1 to 2
`
`FIG. 46
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 36 of 122 US 2006/0278992 Al
`
`/4706
`
`/4708
`
`FIG. 4 7
`
`/4806
`
`/4808
`
`47·;0
`
`4702
`
`4704
`
`4712
`
`A)
`
`4802
`
`4804
`
`A)
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`...___,,------,. /
`
`4 706
`
`4710
`
`4704
`
`4712
`
`B)
`
`C)
`
`4804
`
`B)
`
`4710
`
`4712
`
`/4808
`
`FIG. 48
`
`C)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 37 of 122 US 2006/0278992 Al
`
`4902 4902 4902
`
`4902 4902
`
`122 ~I §I ~I ~I 2802 ~I ~I §I ~I
`4904 4904 IL 4904 4904 4904
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`4902 4902 4902
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`FIG. 49
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`FIG. 50
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`~
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`112
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`122
`
`112
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 38 of 122 US 2006/0278992 Al
`
`5102
`
`FIG. 51
`
`5104
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 39 of 122 US 2006/0278992 Al
`
`FIG. 52
`
`5102
`
`5202
`
`\
`
`5200
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 40 of 122 US 2006/0278992 Al
`
`5302 I
`
`5304
`1 5310
`
`-5312
`5308,
`
`5302
`
`a)
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`a)
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`a)
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`a)
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`FIG. 53
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`FIG. 54
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`FIG. 55
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`-
`
`FIG. 56
`
`b)
`
`b)
`
`b)
`
`b)
`
`-
`
`-
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 41 of 122 US 2006/0278992 Al
`
`a)
`
`a)
`
`a)
`
`FIG. 57
`
`FIG. 58
`
`FIG. 59
`
`b)
`
`b)
`
`b)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 42 of 122 US 2006/0278992 Al
`
`a)
`
`a)
`
`a)
`
`FIG. 60
`
`FIG. 61
`
`FIG. 62
`
`b)
`
`b)
`
`b)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 43 of 122 US 2006/0278992 Al
`
`FIG. 63
`
`a)
`
`6402
`6404
`
`a)
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`a)
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`FIG. 64
`
`FIG. 65
`
`b)
`
`6406
`6408
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`b)
`
`b)
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`

`

`Patent Application Publication Dec. 14, 2006 Sheet 44 of 122 US 2006/0278992 Al
`
`6602
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`6606
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`I
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`I
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`FIG. 66
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`b)
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`6704
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`FIG. 67
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`b)
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`a)
`
`FIG. 68
`
`b)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 45 of 122 US 2006/0278992 Al
`
`-
`-
`
`-
`
`FIG. 69
`
`rn
`
`LJ
`
`-
`-
`
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`
`FIG. 70
`
`-
`
`-
`
`-
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`
`- -
`
`-
`
`-
`
`-
`
`a)
`
`b)
`
`a)
`
`b)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 46 of 122 US 2006/0278992 Al
`
`~
`
`n
`
`n
`
`<10 µm
`T
`yp: < 5 µm
`
`FIG. 71
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 47 of 122 US 2006/0278992 Al
`
`I LJ
`
`FIG. 72
`
`FIG. 73
`
`FIG. 74
`
`b)
`
`b)
`
`b)
`
`a)
`
`a)
`
`a)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 48 of 122 US 2006/0278992 Al
`
`a)
`
`a)
`
`a)
`
`FIG. 75
`
`FIG. 76
`
`FIG. 77
`
`b)
`
`b)
`
`b)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 49 of 122 US 2006/0278992 Al
`
`a)
`
`a)
`
`a)
`
`FIG. 78
`
`FIG. 79
`
`FIG. 80
`
`b)
`
`b)
`
`b)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 50 of 122 US 2006/0278992 Al
`
`a)
`
`a)
`
`a)
`
`FIG. 81
`
`FIG. 82
`
`FIG. 83
`
`b)
`
`b)
`
`b)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 51 of 122 US 2006/0278992 Al
`
`a)
`
`FIG. 84
`
`b)
`
`FIG. 85
`
`a)
`
`b)
`
`a)
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`b)
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`a)
`
`b)
`
`FIG. 86
`
`FIG. 87
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 52 of 122 US 2006/0278992 Al
`
`a)
`
`a)
`
`a)
`
`8804
`I
`
`I
`
`I
`
`8806
`I
`
`I
`
`I
`
`b)
`
`FIG. 88
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`I
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`I
`
`I
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`I
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`b)
`
`FIG. 89
`
`-
`
`b)
`
`I
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`I
`
`FIG. 90
`
`I
`
`I
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 53 of 122 US 2006/0278992 Al
`
`9102
`
`I
`
`9104
`
`I
`
`I
`
`I
`
`I
`
`a)
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`a)
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`I
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`I
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`
`b)
`
`FIG. 91
`
`b)
`
`FIG. 95
`
`b)
`
`FIG. 96
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 54 of 122 US 2006/0278992 Al
`
`Mag= 643 X
`
`20µm
`!····················}
`
`EHT = 10.00 kV
`WD = 4 mm
`
`Signal A= SE2
`Photo No.= 58
`
`Date :2 Jun 2005
`Time :11 :21
`
`20 um diameter
`1 OOum deep filled Via
`
`•
`
`FIG 93
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 55 of 122 US 2006/0278992 Al
`
`Mag" 286 X
`
`30µm
`
`Date :11 Feb 2005
`Signal A= SE2
`Piloto No." 3250 Time :14:47
`
`FIG. 94
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 56 of 122 US 2006/0278992 Al
`
`I
`
`I
`
`I
`
`I
`
`I
`
`I
`
`a)
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`a)
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`a)
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`-
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`-
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`-
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`b)
`
`FIG. 97
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`-
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`
`b)
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`-
`
`FIG. 98
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`----i:::: u
`
`b)
`
`--
`
`FIG. 99
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 57 of 122 US 2006/0278992 Al
`
`n /1
`
`'
`
`I
`
`10002
`
`I
`
`a)
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`a)
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`H
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`I
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`
`b)
`
`FIG. 100
`
`b)
`
`FIG. 101
`
`b)
`
`FIG. 102
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 58 of 122 US 2006/0278992 Al
`
`--
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 103
`
`Daughter
`Wafer
`
`FIG. 104
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 105
`
`a)
`
`a)
`
`a)
`
`b)
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 59 of 122
`
`US 2006/0278992 Al
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 106
`
`FIG. 107
`
`Tall photoresist 10812 ""'
`
`Seed Layer 10810 ~~,
`
`Thick dielectric 10808
`
`IC cover glass 10806
`
`~~ - - - - - - - - - - -<
`Undercut 10804~~ ~ \
`-
`
`Aluminum pad 10802
`
`...... ~ - - - - - - - - - - - - - -1
`I
`
`FIG. 108
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 60 of 122
`
`US 2006/0278992 Al
`
`10804
`
`FIG. 109
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 110
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 111
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 61 of 122
`
`US 2006/0278992 Al
`
`•
`
`111-11111111111 Mother
`FIG. 112
`
`Wafer
`
`D;;:!~r I 111111111111111111111111111111111111
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`a)
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`Mother
`Wafer
`
`FIG. 113
`
`Daughter
`Wafer
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`~ I i I
`
`Mother
`Wafer
`
`FIG. 114
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 62 of 122
`
`US 2006/0278992 Al
`
`8)
`
`Daughter
`Wafer
`
`b)e:1~= Mother
`
`Wafer
`
`FIG. 115
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 116
`
`a)
`
`a)
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`Daughter
`Wafer
`
`Ii~
`
`I
`
`.·.·.·.·.·.·.·.·.·.··~
`
`1•1•1•1•1•1•1•11111••••••••••••••••1111•1•1•1•11•11111•••••••••••••••••••••111
`
`.. _· .. : .. _· .. : .. _· .. : .. _· .. : .. _· .. : .. _· .. : .. _· .. : .. _· .. : .. _• .. : .. _• .. : .. _••.; .. : ... : .. : ... : .. : ... : .. : ... · .. : ... : .. : ... : .. : ... · .. : ... · .. : ... · .. : ... ··.;· .. ··.;· .. ··.;· .. · .. :... .................. . ................... : ... · .. : ... · .. : ... · .. : ... · .. : ... · .. : ... · .. : ... · .. : ... · .. : ... · .. : ... · .. : ... !
`;
`
`.
`
`FIG. 117
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 63 of 122
`
`US 2006/0278992 Al
`
`•
`
`•
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 118
`
`Daughter
`Wafer
`
`I
`
`Mother
`Wafer
`
`FIG. 119
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 120
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 64 of 122
`
`US 2006/0278992 Al
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`12202
`
`FIG. 121
`
`12204
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`Daughter
`Wafer
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`Mother
`Wafer
`
`m:i111111111111111111111111111111111111111111111111111111111111111111111111111111
`
`· - -
`
`FIG. 122
`
`Daughter
`Wafer 2
`
`Daughter
`Wafer
`
`Mother
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`
`FIG. 123
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 65 of 122
`
`US 2006/0278992 Al
`
`12502
`
`I
`I
`I
`I
`I
`
`Daughter
`Wafer 2
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 124
`
`Daughter
`Wafer2
`
`Daughter
`Wafer
`
`Mother
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`
`FIG. 125
`
`12504
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 66 of 122
`
`US 2006/0278992 Al
`
`tttttt@'t):1':~tttttltttttttt
`ttttt:·:-:-:-:-:-:=:::=:::=:::=:::=:::=:-:-:\//////·:·:·:·:·:·:=:::=:::=:::=:::=:-:-·rtr
`:(:(:(:(:(:(:(:(:(:(/:•:•:•:•:::::::::::::::::::::::•:.::::::/:(:(:(:(:(:(:(:(:(:(:.:,:•:•:•:::::::::::::::::::•:.:::\{
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`FIG. 126
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`:,:;:;:;:;:;:;:;:;:;:;:;:;:;:,;~1:,:;:;:;:;:;:;:;:;:;:;:;:;:;:;:,;,::;:::;::,:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:,;,::;:::;:::;::,:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:,;,::;:::;:::;::,:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:;:,;,:,;,:,;:::;,:,:;:;:;:;:;:;:;:;:;:;:;:;:;:,
`
`Mother
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`FIG. 127
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 67 of 122
`
`US 2006/0278992 Al
`
`Daughter
`Wafer
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`Mother
`Wafer
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`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 128
`
`FIG. 129
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 68 of 122 US 2006/0278992 Al
`
`Mother
`Wafer
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`Mother
`Wafer
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`:-..,,,,,,,,,,,,,,,,,, ..... ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,~
`
`FIG. 130
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`FIG. 131
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`

`

`Patent Application Publication Dec. 14, 2006 Sheet 69 of 122 US 2006/0278992 Al
`
`Mother
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`Mother
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`
`FIG. 132
`
`FIG. 133
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 70 of 122
`
`US 2006/0278992 Al
`
`.......................................................................................................................................................................
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`:I::::1:1:1:1:1:1:11::1:11::1:1:::::::::::::1:11::1:1:::::::::::::1:11::1:1:::::::::::::1:11::1:1:::::::::::::1:11::1:1::::::::::ttttttttttt:::::::::::::::1:11::1:1:::::::::::::1:11::1:1:::::::::::::1:11::1:1:::::::::::::1:11::1:1:::::::::::::1:11::1:1:::::::::::::1:11::1:1:::::::::::::1:11:
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`
`i:i:i:i:i:i:l:ili:l:ili:i:i:i:i:i:l:ili:l:ili:i:i:i:i:i:l:ili:l:ili:i:i:i:i:i:l:ili:l:ili:i:i:i:i:i:l:ili:l:ili:i:i:i:i:i:l:ili:l:ili:i:i:i:i:i:l:ili:I:
`(1\}1/\}1\}1\}1/\}1\}1\}1/\}1\}1\}1/\}1\}1\}1/\}1\}1\}1/\}1\}1\}1/\}1\1
`
`Mother
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`FIG. 134
`
`............................................................
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`0;;:~er ililill
`
`Mother
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`
`FIG. 135
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 71 of 122
`
`US 2006/0278992 Al
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`Daughter
`Wafer
`
`Mother
`Wafer
`
`FIG. 136
`
`FIG. 138
`
`Next
`Daughter
`Wafer
`
`FIG. 139
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 72 of 122
`
`US 2006/0278992 Al
`
`13702
`
`13706
`
`Mag= 2.51 K.X
`
`_2µm
`
`EHT = :3.66 kV
`WD = 4 mm
`
`Sigr1al A= SE2
`Photo No.= 97
`
`Date :15 Jur, 2005
`Time :15:45
`
`FIG. 137
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 73 of 122 US 2006/0278992 Al
`
`14002~
`
`~14006
`
`~14012
`
`~14016
`
`FIG. 140
`
`~14014
`
`~14008
`
`~14010
`
`TiPdAu
`
`AuSn
`
`Au
`
`Au
`
`Ni
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`Cu
`
`TiPdAu
`
`AuSn
`Ni
`
`Cu
`
`-
`
`~14006
`
`~14102
`
`.....
`
`~14008
`~14010
`
`FIG. 141
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 74 of 122 US 2006/0278992 Al
`
`14204
`
`14206
`
`14206
`
`,_____. ~ 14202
`
`r
`14210~
`
`-......
`
`14208
`
`FIG. 142
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 75 of 122 US 2006/0278992 Al
`
`A
`A) r
`+
`
`A
`C) r
`+
`
`-, B)
`
`A
`-, D )~
`
`E)
`
`A
`
`.- 1--~ .... -
`
`A
`-,
`
`F)
`
`OR
`i c:::::J
`
`i
`
`j
`
`j
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`j
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`j
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`j
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`j
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`j
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`j
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`0000
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`0000
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`I)
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`A
`.- -
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`A
`- - ,
`
`J)
`
`FIG. 143-1
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 76 of 122 US 2006/0278992 Al
`
`K) ~-o-~ L)
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`·············· ...
`
`!
`
`...........
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`.... ··
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`.•
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`M)
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`..
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`·1
`1··
`A
`A
`r- -i -
`-
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`.. J ........................... J.
`!
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`,'
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`0)
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`P)
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`.
`-~ I
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`Q)
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`R)
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`I I
`I I
`,2,
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`S)
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`I
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`I I
`I
`,t;j,
`
`FIG. 143-2
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 77 of 122 US 2006/0278992 Al
`
`I ' ' I
`U) --,6-, -
`
`I
`
`I
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`I
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`I
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`W)
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`T)
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`V)
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`X)
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`D
`
`FIG. 143-3
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 78 of 122
`
`US 2006/0278992 Al
`
`Mag "
`
`·1.95 K X
`
`. "'
`.
`EHT" ::i.60 kV
`: ............................. 11fD"'
`8111111
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`~fu~~~~
`
`FIG. 144
`
`Mag" 2.23 KX
`
`2µm.
`
`EHT " 10.00 kV
`WD" 7mm
`
`Date :10 May 2005
`Signal A" SE2
`Photo No.= 3400 Time :11 :31
`
`FIG. 145
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 79 of 122 US 2006/0278992 Al
`
`A)
`
`4710
`
`14606
`
`14612
`
`FIG. 146
`
`14610
`
`14610
`
`14600
`
`14604
`
`14602
`
`14600
`
`B)
`
`14606
`
`14612
`
`14602
`
`14604
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 80 of 122
`
`US 2006/0278992 Al
`
`a) 1--------------------r----------l
`
`FIG. 147
`
`b)
`
`FIG. 148
`
`FIG. 149
`
`~a) I
`
`I -1 ___,
`
`b) 1---1 ---,I I I .----, -----I
`
`r-a) 1 - - - - - - - - - - l l Flt----------l
`l b) t---1 ---,I bd .----I -------1
`
`FIG. 150
`
`a) 1---1 -------1Fl1----------1
`
`b) , - - - - I ___,,~.----I ---,
`
`FIG. 151
`
`FIG. 152
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 81 of 122 US 2006/0278992 Al
`
`FIG. 153 ~<
`
`'bf
`D
`
`FIG. 154
`
`FIG. 155
`
`\./
`
`FIG. 156
`
`V
`
`'U'
`V
`
`FIG. 158
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 82 of 122 US 2006/0278992 Al
`
`15um diameter 135 deep
`
`FIG. 157A
`
`FIG. 1578
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 83 of 122 US 2006/0278992 Al
`
`15904
`15902
`,,
`I / I
`
`1
`I
`
`15904
`I
`I
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`FIG. 159
`
`16002
`I I I.-------.
`
`I
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`FIG. 160
`
`FIG. 161
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`FIG. 162
`
`FIG. 163
`
`16404
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`I
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`I
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`/
`
`16406 / -
`
`f
`FIG. 164
`
`16402
`
`5)
`
`------- 16502
`
`FIG. 165
`
`FIG. 166
`
`FIG. 167
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 84 of 122 US 2006/0278992 Al
`
`I I
`
`11
`
`L_J/D L_J
`
`E L_J
`16802 -~~~-n 16806 ~--1
`E - D
`
`I
`
`t - - : -----1
`
`FIG. 168
`
`FIG. 169
`
`FIG. 170
`
`16802 ~ 0
`
`16802 -
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`-
`
`>+-++-+-++-+-+-++-+-+-++++++-N __ - 16802
`
`/ 16802 G/
`
`16802 -
`
`FIG. 171A
`
`FIG. 171 B
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 85 of 122 US 2006/0278992 Al
`
`A) D
`
`C)
`
`FIG. 172
`
`FIG. 173
`
`FIG. 174
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 86 of 122 US 2006/0278992 Al
`
`17602 ~-~
`
`-
`
`17606 -~~-~~
`
`[
`
`I
`
`FIG. 176
`
`-1-- --1- --
`
`A
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`•
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`A
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`--
`•
`
`FIG. 17 7 :,..............a ~-______._______.Fl :
`
`[l ~--17804
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`e---
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`FIG. 178
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`~~ --17802
`A
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`--H-----+-~
`
`1~~17808
`t
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`A
`r
`t
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`17806 /"17810
`
`

`

`~ ...
`~ ....
`c ('D
`.... 0 =
`""O = O" -....
`.... 0 =
`t 'e -....
`
`~ .....
`
`(')
`
`('D = .....
`~ .....
`""O
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`> ....
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`N
`l,O
`l,O
`QO
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`N
`0
`..._
`O'I
`0
`0
`N
`rJJ
`c
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`....
`0 ....
`
`N
`N
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`-....J
`QO
`.....
`rJJ =(cid:173)
`
`('D
`('D
`
`O'I
`0
`0
`N
`
`~ .....
`
`(')
`
`Resist strip
`(reroute)
`
`Metal deposition
`
`protect plus reroute)
`Lithography ( contact
`
`Metal deposition and cap plating
`
`process
`
`Prepare parts for electroless plating
`
`Without reroute
`
`With reroute
`
`Electroless (Typically Rigid)
`
`materials
`
`metal deposition materials, not malleable
`Electroless barrier and cap (ONLY for rigid
`
`Resist strip
`
`reroute (if used))
`
`Seed etch (around pad and to create
`
`Lithoqraphv (contact protect plus reroute)
`
`Resist strip
`materials, not malleable materials
`
`Electroless barrier and cap (ONLY for rigid metal deposition
`
`Resist strip
`
`reroute (if used))
`pad and to create
`Seed etch (around
`
`reroute (if used))
`pad and to create
`Seed etch (around
`
`used))
`
`plus reroute (if
`( contact protect
`
`Lithography
`
`Resist strip
`
`reroute(if used))
`
`protect plus
`
`Lithography (contact
`
`and cap
`
`Electroplate barrier
`
`Metal deposition (plating)
`
`Lithography for pads
`
`Seed layer deposition
`
`Barrier layer deposition (sputtered)
`
`Clean and prepare parts
`
`~
`
`~
`
`~
`
`~
`
`deposition materials, not malleable materials
`8 Electroless barrier and cap (ONLY for rigid metal
`7
`6
`
`~
`
`~
`
`~
`
`5
`
`~
`
`Resist strip
`
`Metal deposition (sputter)
`
`4
`3
`2 Lithography for pads
`
`1 Oxidation cap layer I diffusion cap layer deposition
`1
`
`Resist strip
`
`seed etch)
`electroless protect)
`electroless
`etch WITH Sidewall
`reroute (post-
`(post-electroless seed
`With or without With or without reroute
`
`etch)
`
`electroless seed
`
`reroute (pre-
`With or without
`
`Plated Contact (Malleable or Rigid)
`
`Electroplated
`
`rigid barrier)
`
`(electroplate over
`With or w/o reroute
`
`metal
`
`Lithography for barrier
`
`where used
`
`metal and reroute
`
`Lithography for barrier
`
`Without Reroute
`
`With Reroute
`Sputtered Contact (Typically Malleable)
`
`FIG. 180
`
`

`

`~ ...
`~ ....
`c ('D
`.... 0 =
`""O = O" -....
`.... 0 =
`~ 'e -....
`('D = .....
`~ .....
`""O
`
`~ .....
`
`(')
`
`~ .....
`
`(')
`
`> ....
`
`N
`l,O
`l,O
`QO
`-....J
`N
`0
`..._
`O'I
`0
`0
`N
`rJJ
`c
`
`....
`0 ....
`
`N
`N
`
`QO
`QO
`.....
`rJJ =(cid:173)
`
`('D
`('D
`
`I
`II~ ms
`
`mm
`
`expose via back
`Thin wafer to
`
`if needed
`
`O'I
`0
`0
`N
`
`Through Via
`
`With/Without
`
`Plating
`
`Via with capacitive
`
`coupling
`
`With/Without
`
`Plating
`
`Back to Front
`
`Vias
`
`C on front side
`
`C on backside
`
`A (front & Back) #
`
`B
`A#
`
`A (front & Back) #
`
`substrate
`
`Coaxial
`
`Uniaxial
`
`: ........... TO FIG. 181 B
`
`L
`K
`
`B (for central portion}
`
`J (if thick via)
`
`H
`G
`F
`
`E
`
`D
`
`/barrier/seed
`trench seed
`Metal dep into
`and/ or reroute)
`B (for contact
`
`D
`
`C (annular)
`B (annular)
`
`conductor; outer conductor; cuter
`
`Coaxial
`
`Coaxial
`
`isolated from
`conductor
`
`substrate
`shorted to
`conductor
`
`FIG. 181A
`
`contact)
`B (for pad
`
`C
`
`B (central)
`
`A (onlv if plated)#
`
`Coaxial Etch;
`
`Conductor
`Uniaxial
`
`Full Fill
`
`Fill w/Pre-thin
`Partial Metal
`
`filling
`
`Pre-thin
`No Fill
`
`

`

`(') a .... 0 =
`""O = O" -....
`(') a .... 0 =
`'e -....
`>
`""O a ('D = .....
`
`'e
`
`~ ....
`c
`
`.i;...
`
`('D
`
`N
`B*
`vias
`
`J (back -if plated
`
`J (front -if plated
`
`vias
`
`lated
`
`F (on both sides if
`
`FIG. 1818
`
`J (back -if plated
`
`N
`B*
`vias
`
`J (front -if plated
`
`vias
`
`M
`
`G (if plated
`
`F
`E
`D
`
`C (on front side
`
`A
`
`M#
`
`G
`
`F
`
`> ....
`
`N
`l,O
`l,O
`QO
`-....J
`N
`0
`..._
`O'I
`0
`0
`N
`rJJ
`c
`
`#=(STEP IS OPTIONAL FOR THERMO STACK)
`N = ETCH THICK DIELECTRIC
`M = VIA METAL DEPOSITION (DEP)
`L = CENTRAL PORTION ETCH
`K = DIELECTRIC ETCH
`J* = CMP (ONLY IF PLATED WITH THICK METAL DURING VIA DEPOSITION)
`J = CHEMICAL MECHANICAL PROCESSING (CMP)
`H = RING CONTACT FILL
`
`....
`0 ....
`
`l,O
`QO
`
`N
`N
`
`('D a
`rJJ =(cid:173)
`
`O'I
`0
`0
`N
`
`~
`
`G = SEED LA YER
`F = BARRIER LAYER DEPOSITION (DEP)
`E = DIELECTRIC DEPOSITION (DEP)
`D = STRIP PHOTORESIST
`C = ETCH TRENCH
`8* = PHOTOLITHOGRAPHY (FOR OPENING WAFER PADS)
`8 = PHOTOLITHOGRAPHY
`A= THICK DIELECTRIC DEPOSITION (DEP)
`KEY
`
`N#
`B*#
`J*#
`
`G
`
`F
`
`Core Via Fill
`
`Liftoff
`
`FROM FIG. 181A ........... ~
`
`

`

`~ ...
`~ ....
`c ('D
`.... 0 =
`""O = O" -....
`.... 0 =
`t 'e -....
`
`~ .....
`
`(')
`
`('D = .....
`~ .....
`""O
`
`> ....
`
`N
`l,O
`l,O
`QO
`-....J
`N
`0
`..._
`O'I
`0
`0
`N
`rJJ
`c
`
`....
`0 ....
`
`0
`l,O
`.....
`rJJ =(cid:173)
`
`('D
`('D
`
`N
`N
`
`O'I
`0
`0
`N
`
`~ .....
`
`(')
`
`- - - -
`
`Fuse
`
`Tack Chips to 320°C (up to 400°C)
`
`Mother Wafer lo 240°C
`
`Dice
`
`Deposition)
`
`Backside (Metal
`Prep Daughter
`
`Remove Daugl1ter Front Side Protect
`
`Daughter Barrier & Cap
`
`Daughter Etch W afcr Backside
`
`Daughter Thin Wafer Backside
`
`Daughter Front Side Protect
`
`Remove encapsulant
`
`Barrier & Cap
`
`Etch Wafer Backside
`
`Thin Wafer Backside
`
`Encapsulate Wafer
`
`Rigid
`
`Daughter
`
`Prep
`
`Malleable
`Mother
`Prep
`
`Malleable
`
`Prep Daughter
`
`Daughter Rigid
`
`Via Process
`
`Rigid
`
`Prep Mother
`
`Malleable
`Prep Mother
`
`Malleable
`Daughter
`Via Process
`
`Rigid
`
`Prep Mother
`
`Rigid
`
`Daughter
`Via Process
`
`Malleable
`Prep Mother
`
`Malleable
`Daughter
`Via Process
`
`Rigid
`
`Prep Mother
`
`Single Layer
`
`Non Via
`
`Pre-Hybrid Thin
`
`Post-Hybrid Thin
`
`Via Specific
`
`FIG. 182
`
`

`

`Patent Application Publication Dec. 14, 2006 Sheet 91 of 122
`
`US 2006/0278992 Al
`
`D~:!~er
`
`~r_, ___________ '._. ------L:-:::· __ :i;:,_=_=