WO 02/12932
`
`PCT/USOl/22750
`
`EXAMPLE 5: RF SPUTTER DEPOSITION OF SILICA WITH SUBSTRATE BIAS
`
`An AKT 4300 series PVD production reactor (Applied Komatsu Technology, Santa
`
`Clara, CA) modified to accept custom ceramic tile targets and modified to induce a voltage
`
`on the substrate was used to deposit silica on planar and patterned 100 mm silicon wafers.
`5 A wide area target of dimension 750 x 870 mm was fabricated as described in Example 1.
`
`The wafers were placed in the center of a Corning code 1739 glass carrier sheet opposite
`
`the target. The reactor was operated in the diode sputtering mode, without magnetic
`
`enhancement, at a high frequency RF power of 2500 Wand an induced voltage of -400V.
`
`A bias voltage of -125 V at 2 MHz and 250 W was induced on the substrate. An argon gas
`
`10
`
`flow rate of 160 seem was used.
`
`Average surface roughness of a 0.75 µm thick film deposited on a planar wafer,
`
`detennined as in Example 4, was 0.14 nm. The refractive index detennined as the average
`
`of measurements at 12 points on the surface was 1.4622 with a uniforniity, defined as the
`difference of the minimum and maximum values divided by twice the average, of3.4 x 10-
`5 percent. To the best knowledge of the· inventors, the exceptional uniformity reported here
`
`15
`
`exceeds that of any vacuum deposited film reported previously.
`FIG. 7 shows an SEM image of a s1Iica film deposited over a patterned substrate.
`
`The trenches in the patterned substrate are seen to be completely and uniformly filled and
`
`the ridges are uniformly covered. The top surface of the layer overlying the ridges is flat
`
`20
`
`and the sloping sides of the layer overlying the ridges are nominally at 45 degree angles.
`All of the foregoing geometric features are characteristic of bias sputtering deposition. As
`reported above, for trench features with unit aspect ratio, the maximum thickness at the
`
`bottom of the trench of films deposited by conventional RF sputtering is less than about
`
`10-20%.
`
`25
`
`Although the present invention bas been described in terms of specific materials
`
`and conditions, the description is only an example of the invention's application. Various
`
`adaptations and modifications of the processes disclosed are contemplated within the scope
`
`of the invention as defined by the following claims.
`
`-26-
`
`Page 368 of 1542
`
`APPLIED MATERIALS EXHIBIT 1052 (Part 2 of 4)
`
`

`

`WO 02/12932
`
`CLAIMS
`
`We claim:
`
`PCT/USOJ/22750
`
`1.
`
`A method of making a material layer used in forming planar optical devices,
`
`the method comprising:
`
`5
`
`positioning a substrate opposite a planar target, the target having an area
`
`larger than the area of the substrate; and
`
`applY'i;ng radiofrequency power at a first frequency to the target in the
`
`presence of a gas, under a condition wherein a central portion of the target
`
`overlying the substrate is exposed to a uniform plasma condition, whereby a
`
`10
`
`material layer is formed on the substrate.
`
`2.
`
`The method of Claim 1 wherein the uniform plasma condition is created by
`
`applying a time-averaged uniform magnetic field.
`
`15
`
`3.
`The method of Claim 2 wherein the uniform magnetic field is applied by
`moving a magnet positioned proximate to the target across the target in a plane parallel to
`
`the plane of the target.
`
`4.
`
`The method of Claim 3 wherein moving a magnet across the target is
`
`20 moving a magnet in a first direction, the magnet extending beyond the target, in a second
`
`direction perpendicular to the first direction.
`
`5.
`
`The method of Claim 1 wherein the area of the planar target is at least 1.5
`
`times greater than the area of the substrate.
`
`25
`
`6.
`
`The method of Claim 5 wherein the material layer deposited on the
`substrate has a thickness nonunifonnity ofless than 5 percent.
`
`7.
`
`The method of Claim 6 wherein the material layer deposited on the
`
`30
`
`substrate has a nonuniformity in an optical property that is smaller than a nonuniformity in
`
`thickness.
`
`-27-
`
`Page 369 of 1542
`
`

`

`WO 02/12932
`
`PCT/USOl/22750
`
`8.
`
`The method of Claim 1 further comprising applying radiofrequency power
`
`at a second frequency to the target wherein the second frequency is lower than the first
`
`frequency.
`
`9.
`to the substrate.
`
`The method of Claim 1 further comprising applying radiofrequency power
`
`10.
`
`The method of Claim 8 further comprising applying radiofrequency power
`
`to the substrate.
`
`11.
`
`The method of Claim 1 wherein the uniform plasma condition is created
`
`without use of a magnet and further comprising applying radio frequency power to the
`
`substrate.
`
`5
`
`10
`
`15
`
`12.
`
`The method of Claim 1 wherein the target comprises refractory oxides.
`
`13.
`
`The method of Claim 12 wherein the target comprises oxides of silicon.
`
`14.
`
`The method of Claim 13 wherein the target comprises silicon monoxide.
`
`20
`
`15.
`
`The method of Claim 12 wherein the target further comprises compounds of
`
`rare earths.
`
`16.
`
`The method of Claim 8 wherein the refractive index of a first material layer
`
`25
`
`deposited with the radio:frequency power at the second frequency at a first power level is
`
`higher than the refractive index of a second material layer deposited with the
`
`radiofrequency power at the second frequency at a second power level, wherein the first
`
`power level is higher than the second power level and wherein the sum of the power levels
`
`of the first frequency and the second frequency are the same during deposition of the first
`
`30 material layer and the second material layer.
`
`17.
`
`The method of Claim 1 wherein the refractive index of a first material layer
`
`deposited with the substrate held at a first temperature is higher than the refractive index of
`
`-28-
`
`Page 370 of 1542
`
`

`

`WO 02/12932
`
`PCT/USOl/22750
`
`a second material layer deposited with the substrate held at a second temperature wherein
`
`the first temperature is higher than the second temperature.
`
`18.
`
`The method of Claim 1 wherein the refractive index of a first material layer
`
`5
`
`deposited at a first radiofrequency power is higher than the refractive index of a second
`
`material layer deposited at a second radio:frequency power wherein the :first power is
`
`higher than the second power.
`
`19.
`
`The method of Claim 1 wherein the gas comprises an inert gas.
`
`10
`
`15
`
`20.
`
`The method of Claim 1 wherein the gas further comprises a reactive gas
`
`whereby the refractive index of the material layer is modified compared with the refractive
`
`index of a material layer formed in the absence of the reactive gas.
`
`21.
`
`The method of Claim 20 wherein the reactive gas is a reducing gas and
`
`wherein the refractive index of the material layer is greater than the refractive index, of a
`
`material layer formed in the absence of the reducing gas.
`
`22.
`
`The method of Claim 20 wherein the reactive gas is an oxidizing gas and
`
`20 wherein the refractive index of the material layer is smaller than the refractive index of a
`
`material layer formed in the absence of the oxidizing gas.
`
`23.
`
`The method of Claim 1 wherein the target comprises a plurality of tiles.
`
`25
`
`24.
`
`The method of Claim 23 wherein the tiles comprise an alloy material.
`
`25.
`
`A method of making a planar optical device, the method comprising:
`
`depositing a first layer of cladding material having a first refractive index
`
`on a substrate by physical vapor deposition to form a first structure, wherein
`
`30
`
`radiofrequency power is applied to a planar source of cladding material positioned
`
`opposite the substrate, the source having an area greater than the area of the
`
`substrate, the power applied in the presence of a gas and under a condition wherein
`
`a central portion of the source overlying the substrate is exposed to a uniform
`
`plasma condition; and
`
`-29-
`
`Page 371 of 1542
`
`

`

`WO 02/12932
`
`PCT/USOl/22750
`
`depositing a layer of core material on the cladding material to form a second
`
`structure, the core material having a second refractive index greater than the first
`
`refractive index, the core material deposited by physical vapor deposition, wherein
`
`radio.frequency power is applied to a planar source of core material positioned
`
`5
`
`opposite the first structure, the source of core material having an area greater than
`
`the area of the first structure, the power applied in the presence of a gas and under a
`
`condition wherein a central portion of the source of core material overlying the :first
`
`structure is exposed to a uniform plasma condition;
`
`10
`
`26.
`
`The method of Claim 25 further comprising:
`
`depositing a second layer of cladding material on the layer of core material
`
`by physical vapor deposition wherein radio frequency power is applied to the planar
`
`source of cladding material positioned opposite the second structure under a
`
`condition wherein a central portion of the source overlying the second structure is
`
`15
`
`exposed to a uniform plasma condition; and
`
`etching regions of the second layer of the cladding material and a portion of
`
`the thickness of the layer of core material to produce a ridge structure in the second
`
`layer of cladding material and in a portion of the layer of core material.
`
`20
`
`27.
`
`The method of Claim 25 further comprising;
`etching regions of the layer of core material to produce a ridge structure in
`
`the layer of core material, forming a third structure; and
`
`depositing a second layer of cladding material over the ridge structure by
`
`physical vapor deposition wherein
`
`25
`
`30
`
`radiofrequency power is applied to the planar source of cladding
`
`material positioned opposite the third structure, under a condition wherein
`
`the central portion of the source of cladding material overlying the third
`
`structure is exposed to a uniform plasma condition, and
`
`radio frequency power is applied to the third structure.
`
`28.
`
`The method of Claim 27 wherein depositing the first layer of cladding
`
`material further comprises applying radiofrequency power to the substrate.
`
`-30-
`
`Page 372 of 1542
`
`

`

`WO 02/12932
`
`PCT/USOl/22750
`
`The method of Claim 28 wherein depositing the layer of core material
`29.
`further comprises applying radiofrequency power to the second structure.
`
`5
`
`10
`
`30.
`
`A method of making a planar optical device, the method comprising:
`depositing a first layer of cladding material having a first refractive index
`
`on a substrate by physical vapor deposition, wherein radiofrequency power is
`
`applied to a planar source of cladding material positioned opposite the substrate,
`
`the source having an area greater than the area of the substrate, the power applied
`
`in the presence of a gas and under a condition wherein a central portion of the
`source overlying the substrate is exposed to a unifonn plasma condition;
`forming a trench in the first layer of cladding material to fonn a first
`
`structure;
`
`depositing a layer of core material on the cladding material completely
`
`filling the trench, the core material having a second refractive index greater than
`
`15
`
`the .first refractive index, the core material deposited by physical vapor deposition,
`
`20
`
`25
`
`wherein radiofrequency power is applied to the first structure and radiofrequency
`power is applied to a planar source of core material positioned opposite the first
`
`structure, the source of core material having an area greater than the area of the
`
`substrate, the power applied in the presence of a gas and under a condition wherein
`a central portion of the source of core material overlying the first structure is
`
`exposed to a uniform plasma condition;
`
`removing core material overlying the first layer of cladding material
`exposing the cladding material except in the area of the trench to provide a
`
`cladding layer with filled trench; and
`
`depositing a layer of cladding material on the cladding layer with filled
`
`trench by physical vapor deposition wherein radio.frequency power is applied to the
`planar source of cladding material positioned opposite the cladding material with
`
`filled trench.
`
`30
`
`31.
`
`The method of Claim 30 wherein depositing a first layer of cladding
`
`material further comprises applying radiofrequency power to the substrate, and wherein
`
`depositing a layer of cladding material on the cladding layer with filled trench further
`comprises applying radio frequency power to the cladding layer with :filled trench.
`
`-31-
`
`Page 373 of 1542
`
`

`

`WO 02/12932
`
`PCT/USOl/22750
`
`A method of making a composite sputtering target comprising a plurality of
`32.
`tiles, the target used for physical vapor deposition of material, the method comprising:
`
`sputter coating a side of each of the plurality of tiles with a wetting layer
`material to within an offset of the edge of each tile;
`providing a backing plate composed of a metal with thermal expansion
`
`coefficient similar to the thermal expansion coefficient of the plurality of tiles;
`
`plasma spray coating the backing plate with a ceramic material so as to
`
`cover the regions of the backing plate exposed during physical vapor deposition;
`
`sputter coating regions of the baclcing plate corr~sponding in placement to
`the wetted regions of the tiles with a wetting layer;
`
`wetting the sputtered regions of the plurality·of tiles and of the backing
`p1ate with solder material; and
`assembling the plurality of tiles on the backing plate so as to fonn a solder
`bonded non contacting array of uniformly spaced tiles.
`
`5
`
`10
`
`15
`
`33.
`material.
`
`The method of Claim 32 wherein the plurality of tiles comprise an alloy
`
`The method of Claim 32 wherein the wetting layer material comprises
`34.
`chrome or nickel or mixtures thereof
`
`20
`
`35.
`
`The method of Claim 32 wherein the ceramic material comprises alumina or
`
`silica.
`
`25
`
`36.
`
`The method of Claim 32 wherein the solder material is indium.
`
`-32-
`
`Page 374 of 1542
`
`

`

`WO 02/12932
`
`PCT/USOl/22750
`
`1/5
`
`22
`
`14
`
`15
`
`12
`
`I
`X
`I
`r--~ _____ J ______ l~~~~w
`L-- - - - - - - - - - - - -
`25
`-,-----------
`
`-
`
`-
`
`19
`
`FIG. la
`
`18
`
`18
`
`20
`
`1
`
`y
`
`j
`
`r-----------1
`r-----1
`I
`I
`I
`I
`I
`I
`I
`I
`I
`I
`I
`I
`___ J
`L
`I
`I
`,..___L -+ - - I - - -
`- ---r--t-'J
`
`
`- -_ -- -
`
`22
`
`24
`
`FIG. 2
`
`Page 375 of 1542
`
`

`

`WO 02/12932
`
`PCT/USOl/22750
`
`2/5
`
`19
`
`52
`
`22
`.... :.~~~---'~'----~~--,...i~:
`.,..,
`----,--==-...
`
`19
`
`12
`
`51
`
`FIG. lb
`
`12
`
`29
`
`r1
`
`26
`
`26
`
`( ---
`
`FIG. 3
`
`25
`
`19
`
`t
`
`27
`
`Page 376 of 1542
`
`

`

`WO 02/12932
`
`PCT/USOl/22750
`
`FIG. 4a
`
`3/5
`
`34
`
`36
`34
`32
`
`36
`34
`32
`
`36
`34
`32
`
`FIG. 4b
`
`36
`
`34
`32
`
`FIG. 5a
`
`FIG. 5b
`
`34
`32
`
`34
`32
`
`FIG. 5c
`
`FIG. 5d
`
`30
`
`34
`32
`
`FIG. 5e
`
`Page 377 of 1542
`
`

`

`WO 02/12932
`
`PCT/USOl/22750
`
`4/5
`
`i--.., 41
`
`:---- 32
`
`42
`
`. 32
`
`FIG. 6a
`
`FIG. 6b
`
`43
`
`42
`
`32
`
`42
`
`32
`
`FIG. 6c
`
`45
`
`FIG. 6e
`
`42
`
`32
`
`34
`
`42
`
`32
`
`44
`
`FIG. 6d
`
`46
`
`50
`
`FIG. 6f
`
`,
`
`Page 378 of 1542
`
`

`

`W0 02/12932
`WO 02/12932
`
`PCT/USUl/22750
`PCT/USOl/22750
`
`5/5
`5/5
`
`
`
`Page 379 of 1542
`
`Page 379 of 1542
`
`

`

`(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT)
`
`(19) World Intellectual Property Organization
`International Bureau
`
`I 91111111111111111111111111111111111111111111111111111111111111111111H 11111111911
`
`(43) International Publication Date
`14 February 2002 (14.02.2002)
`
`PCT
`
`(JO) International Publication Number
`WO 02/012932 A3
`
`(51) 1nternational Patent Classification7:
`14/35
`
`C23C 14/34,
`
`(21) International Application Number:
`
`.PCT/USOI/22750
`
`Court, Morgan Hill, CA 95037 (US). ZHANG, Hongmei;
`1330 Rodney Drive, San Jose, CA 95118 (US). PETHE,
`Rajiv; 3680 Springbrook Avenue, San Jose, CA 95148
`(US).
`
`(22) International Filing Date:
`
`18 July 2001 (18.07.2001)
`
`(25) Filing Language:
`
`(26) Publication Language:
`
`English
`
`English
`
`(30) Priority Data:
`09/633,307
`09/903,050
`
`7 August 2000 (07.08.2000) US
`10 July 2001 (10.07.2001) US
`
`SYMMORPHIX, INC. [US/US]; 1278
`(71) Applicant:
`Reamwood Avenue, Sunnyvale, CA 94089·2233 (US).
`
`(72) Inventors: DEMARAY, Richard, E.; 190 Fawn Lane,
`Portola Valley, CA 94028 (US). WANG, Kai-An; 1082
`West Hill Court, Cupertino, CA 95014 (US). MULLA(cid:173)
`PUDI, Ravi, B.; 2117 Shiangzone Court, San Jose, CA
`95121 (US). STADTLER, Douglas, P.; 18509 Murphy
`
`(74) Agents: SA.XON, Roberta, P. el al.; Skjerven Morrill
`Mac Pherson LLP, 25 Metro Drive, Suite 700, San Jose, CA
`95110 (US).
`
`(81) Designated States (national): AE, AG, AL, AM, AT, AU,
`AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU,
`CZ, DI!, DK, DM, DZ, EC, EE, ES, Fl, GB, GD, GE, GH,
`GM, HR, HU, ID, TL, TN, TS, JP, KE, KG, KP, KR, KZ, LC,
`LK, LR, LS, L:J', LU, LV, MA, MD, MG, MK, MN, MW,
`MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, ST, SK,
`SL, TJ, TM, TR, Tl', TZ, UA, UG, UZ, VN, YU, ZJ\, ZW.
`
`(84) Designated States (regional): ARIPO patent (GH, GM,
`Kil, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW), Eurasian
`patent (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM), European
`patent (AT, BI!, CH, CY, Dil, DK, ES, FI, FR, GB, GR, IE,
`IT, LU, MC, NL, PT, SE, TR), OAPT patent (BF, BJ, CF,
`CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
`
`[Conlinued on next page]
`
`---
`-
`------------------------------------------
`= (54) Title: METIIODS FOR MANUFACTURING PLANAR OPTICAL DEVICES
`----
`,-10
`
`22
`
`I
`X
`I
`r--~-----~------~I~~
`L - - - - - - - --- - - - - -
`
`i·4
`
`15
`
`19
`
`------
`
`=
`
`=
`
`M
`~
`Q'\
`M (57) Abstract: Physical vapor deposition processes provide optical materials with contrnlled and uniform refr.c1ctive index that meet
`~ the requirements for active and passive planar optical devices. All processes use radio frequency (RF) ( 14) spullering with a wide
`'-.. area target ( 12), larger in area than the subslrnte (16) on which material is deposited, and uniform plasma conditions which provide
`~ uniform target erosion. In addition, a second RF (15) frequency can be applied 10 the spultering target and RF power (18) can
`be applied to the substrate ( 16) producing substrate bias. Multiple approaches for controlling refractive index are provided. The
`0 present RF spultering methods for material deposition and refractive index control are combined with processes commonly used
`> in semiconductor fabrication to produce planar optical devices such surface ridge devices, buried ridge devices and buried trench
`
`;;-,- devices. A method for forming composite wide area targets from multiple tiles is also provided.
`
`Page 380 of 1542
`
`

`

`w o 021o129 3 2 A3
`
`I Diil llllllll II IIIIIIIIIIIIIII Ill Ill lllll lllllllllllllll lllll llll 111111111111111 DII
`
`Published:
`with international search report
`before the expiration of the time limit for amending the
`claims and to be republished in the ~ent of receipt of
`amendments
`
`(88) Date of publication of the international search report:
`3 October 2002
`
`For two-let/er codes and other abbr~iations, refer to the "Guid(cid:173)
`ance Notes on Codes and Abbreviations" appearing at the begin(cid:173)
`ning of each regular issue of the PCT Gazelle.
`
`Page 381 of 1542
`
`

`

`INTERNATIONAL SEARCH REPORT
`
`A. CLASSIFICATION OF SUBJECT MAcl{fcl4/ 35
`IPC 7 C23Cl4/34
`
`. According to International Patent Classification (IPC) or to both naUonal classification and IPC
`
`B. FIELDS SEARCHED
`Minimum documentation searched (classification system followed by classlflcation symbols)
`C23C
`IPC 7
`
`International Application No
`PCT /US 01/22750
`
`Documentation searched other than minimum documentation to the extent that such documents are included in the fields searched
`
`Electronic data base consulted during the international search (name of data base and, where practical, search terms used)
`PAJ. WPI Data, IBM-TDB, EPO-lnternal
`
`C. DOCUMENTS CONSIDERED TO BE RELEVANT
`Category• Citation of document, with Indication, where appropriate, of the relevant passages
`
`X
`
`V
`
`y
`
`V
`
`WO 97 35044 A (MATERIALS RESEARCH CORP)
`25 September 1997 (1997-09-25)
`page 1. line 28 -page 3. line 7; figure 1
`---
`EP O 510 883 A (AMERICAN TELEPHONE &
`TELEGRAPH) 28 October 1992 (1992-10-28)
`cited in the application
`column 7, line 45 -colurrm 9, 1 ine 11
`---
`PATENT ABSTRACTS OF JAPAN
`vol. 018, no. 215 (C-1191),
`18 April 1994 (1994-04-18)
`& JP 06 010127 A (ULVAC JAPAN LTD),
`18 January 1994 (1994-01-18)
`abstract
`---
`
`·
`
`-/--
`
`Relevant to claim No.
`
`1
`
`2-7.
`12-15.19
`12-15,19
`
`2-4
`
`[RJ Further documents are listed in the continuation of box C.
`
`(KJ Patent family members are listed In annex.
`
`• Special categories of cited documents :
`
`'A" document defining the general state of the art which Is not
`considered to be of particular relevance
`'E' earlier document but published on or after the international
`filing date
`'L' document which may throw doubts on priority clalm(s) or
`which Is cited to establish the publication date of another
`citation or other special reason (as specified)
`•o• document referring to an oral disclosure, use, exhibition or
`other means
`•p• document pubDshed prior to the international filing date but
`later than the priority date claimed
`
`"T" later document publlshed after the international filing date
`or priority date and not In co nfllct with the application but
`cited to understand the principle or theory underlying the
`Invention
`'X" document of particular relevance: the claimed invention
`cannot be considered novel or cannot be considered to
`involve an Inventive step when the document Is taken alone
`•y• document of particular relevance; the claimed Invention
`cannot be considered to lnvclve an inventive step when the
`document Is combined with one or more other such docu·
`ments, such combination being obvious lo a person skilled
`In the art.
`'&" document member ol the same patent family
`
`Date of the actual completion of the International search
`
`Date of mailing of the fnternallonal search report
`
`25 February 2002
`Name and malling address of lhe lSA
`European Patent Office, P.B. 5818 Patentlaan 2
`NL· 2280 HV Rijswip!
`Tel. (+31-70) 340-2040, Tx. 31 651 epo nl,
`Fax: (+31-70) 34Q.3016
`
`Form PCWSA/210 (second sheet) (JIiiy 1992)
`
`19. 07. 2002
`
`Authorized officer
`
`EKHULT, H
`
`Page 382 of 1542
`
`

`

`INTERNATIONAL SEARCH REPORT
`
`International Application No
`PCT/US 01/22750
`
`C.(Contlnualion) DOCUMENTS CONSIDERED TO BE RELEVANT
`
`Category • Citation of document with Indication, where appropriate, of the relevant passages
`
`Relevant to claim No.
`
`Y
`
`A
`
`US 4 437 966 A (HOPE LAWRENCE L ET AL)
`20 March 1984 (1984-03-20)
`column 2, line 50 -column 4, line 54;
`figures 2-4
`EP O 820 088 A (APPLIED KOMATSU TECHNOLOGY
`INC) 21 January 1998 (1998-01-21)
`cited in the application
`column 1, line 1 -column 4, line 13;
`figures 1-6
`column 6, line 10 - line 19
`
`5-7
`
`6,7
`
`Form PCTnSA121 o (canllnuaUon o1 second sheOI) (July 1992)
`
`Page 383 of 1542
`
`

`

`INTERNATIONAL SEARCH REPORT
`
`International application No.
`PCT/US 01/22750
`
`Box I Observations where certain claims were found unsearchable (Continuation of Item 1 of first sheet)
`
`This International Search Report has not been established in respect of certain claims under Article 17(2)(a) for the following reasons:
`
`1. D Claims Nos.:
`
`because they relate to subject matter not required to be searched by this Authority, namely:
`
`2. D Claims Nos.:
`
`because they relate to parts of the International Application that do not comply with the prescribed requirements to such
`an extent that no meaningful International Search can be carried out, specifically:
`
`3. D Claims Nos.:
`
`because they are dependent claims and are not drafted in accordance with the second and third sentences of Rule 6.4(a).
`
`Box II Observations where unity of invention is lacking (Continuation of item 2 of first sheet)
`
`This International Searching Authority found multiple inventions In this international application, as follows:
`
`see additional sheet
`
`1. O As all required additional search fees were timely paid by the applicant, this International Search Report covers all
`
`searchable claims.
`
`2. 0 As all searchable claims could be searched without effort justifying an additional fee, this Authority did not invite payment
`
`of any additional fee.
`
`3. O As only some of the required additional search fees were timely paid by the applicant. this International Search Report
`
`covers only those claims for which fees were paid, specifically claims Nos.:
`
`4. CxJ No required additional search fees were timely paid by the applicant. Consequently, this International Search Report Is
`
`restricted to the invention first mentioned in the claims; it is covered by claims Nos.:
`1-7.12-15,19
`
`Remark on Protest
`
`D The additional search fees were accompanied by the applicant's protest.
`D No protest accompanied the payment of additional search fees.
`
`t=nm, PC:T/l~A/91 n rr.nn1im1Rtlnn nf first sheet (1)) (July 1998)
`
`Page 384 of 1542
`
`

`

`International Application No. PCT/US Ell /22750
`
`FURTHER INFORMATION CONTINUED FROM PCT/ISA/ 210
`
`This International Searching Authority found multiple (groups of)
`inventions in this international application, as follows:
`
`1. Claims: 1-7,12-15,19
`Sputtering method using a time averaged uniform magnetic
`field.
`
`2. Claims: 1,8,18,16
`Sputtering method using dual frequency.
`
`3. Claims: 1,9,11
`Sputtering method using RF substrate bias.
`
`4. Claims: 1,17,18,20-22
`Sputtering method using sputtering parameters to influence
`the refractive index of the coating.
`
`5. Claims: 25-31
`Methods for making optical devices.
`
`6. Claims: 1,23,24,32-36
`Method for making a composite target.
`
`Page 385 of 1542
`
`

`

`INTERN"ATIONAL SEARCH REPORT
`Information on patent family members
`
`International Application No
`PCT/US 01/22750
`Publication
`I
`date
`
`Publication
`date
`
`I
`
`Patent family
`member(s)
`
`Patent document
`I
`cited in search report
`WO 9735044
`25-09-1997
`AU
`1978497 A
`H>-10-1997
`A
`WO
`9735044 Al
`25-09-1997
`-----------------------------------------------------------------------
`us
`28-10-1992
`5119460 A
`02-06-1992
`EP 0510883
`A
`DE
`69212207 Dl
`22-08-1996
`DE
`69212207 T2
`06-02-1997
`EP
`0510883 A2
`28-10-1992
`JP
`2501395 82
`29-05-1996
`JP
`5160498 A
`25-06-1993
`us
`5200029 A
`06-04-1993
`
`JP 06el0127
`us 4437966
`
`A
`
`A
`
`18-01-1994
`
`NONE
`
`20-03-1984
`
`CA
`DE
`EP
`JP
`JP
`us
`EP
`JP
`TW
`
`1206914 Al
`3378710 Dl
`0105407 A2
`4002667 B
`59116379 A
`
`5855744 A
`0820088 A2
`10096078 A
`425590 B
`
`01-07-1986
`19-01-1989
`18-04-1984
`20-01-1992
`05-07-1984
`
`05-01-1999
`21-81-1998
`14-04-1998
`11-03-2001
`
`EP 0820088
`
`A
`
`21-01-1998
`
`Form Pr.TnSA/21 o loatent tamllv annexl I.July 1992)
`
`Page 386 of 1542
`
`

`

`This Page Is Inserted by IFW Operations
`and is not a part of the Official Record
`
`BEST AVAILABLE IMAGES
`
`Defective images within this document are accurate representations of
`the original documents submitted by the applicant.
`
`Defects in the images may include (but are not limited to):
`
`• BLACK BORDERS
`
`• TEXT CUT OFF AT TOP, BOTTOM OR SIDES
`
`• FADEDTEXT
`
`•
`
`ILLEGIBLE TEXT
`
`• SKEWED/SLANTED IMAGES
`
`• COLORED PHOTOS
`
`• BLACK OR VERY BLACK AND WHITE DARK PHOTOS
`
`• GRAY SCALE DOCUMENTS
`
`IMAGES ARE BEST AVAILABLE COPY.
`
`As rescanning documents will not correct images,
`please do not report the images to the
`Image Problem Mailbox.
`
`Page 387 of 1542
`
`

`

`PCT
`WORLD lN111U.ECTUAL PROPERTY ORGANIZATION
`IDrenw:lonal Bureau
`INTERNATIONAL APPLICATION PUBLISHED UNDER nm PATENT COOPERATION 1REA1Y (PCT)
`est> 1ntsmtiom1 Patent ClaaUIClltloll 6 :
`en> 1ateraat1ona1 Publbtlon Number:
`WO 96.'23085
`C23C 141J4, HOtJ 37/34
`(43) tnternatlonal Publbtfon Date:
`
`Al
`
`I August 1996 (01.08.96)
`
`(21) l.menlatloDaJ Applladoa Number:
`
`PCI'/US9SI01089
`
`25 January 1995 (25.0l.9S)
`
`(71) Appllcut (fur oJ1 duignoled Slaks except US): APPLIED
`KOMATSU TECHNOLOGY, INC. [JP/JP); c/o Applied
`Komatsu Technology America, Jnc., 3050 Bowen A venue,
`MIS 02634. Santa Clara, CA 9SOS4 (US}.
`
`(72) IDYeOtGn; ud
`(75) IDffldorlfAppUcantl (fur US only>: DEMAR.A Y, Richard,
`Emal [US/US]; 190 Fawn Lane, Portola Valley, CA 94028
`(US). HERR.ERA, Manuel (US/US]; JS83 Bmndywine
`Road, San Ma11:0. CA 94402 (US).
`
`(74) Aamt= STERN, Robert, J.; Lt:gal/PaleDt Dept.. Applied
`Mall:rials, Inc., 3050 Bower A venue, MIS 2634, Santa Clara.
`CA 9SOS4 (US).
`
`(81) .......... h:d States: AM, AT, AU, BB, BG, BR. BY, CA. CH,
`CN, CZ. DB. DK. ES, Fl, GB, GE, HU, JP, KB. KO, KP,
`KR. KZ. LK.. LT, LU. LV, MD, MG, MN. MW, MX. NL.
`NO, NZ. PL. PT, RO, RU, SD, SE, SI, SK, TJ, IT, UA,
`US, UZ. VN, European patent (AT. BE, CH, DE. DK, ES,
`Flt. OB, GR, IE. IT, LU, MC. NL. PT, SE). OAPI palfflt
`(BF, BJ, CF, CO, Cl. CM, GA. GN, ML. MR. NB, SN, TD,
`TG).
`
`Pubti.lbed
`With interruuioftol search report.
`With amentkd c/4bn.r aNI #i1Jeme1ll.
`
`(54) 'Ible: Atrl'OCLAVE BONDING OF SPUliEUNG TARGET ASSEMBLY
`
`108
`
`(57) Abdract
`
`Fabriadion techniques for an integrated sputtering target assembly include pressure misted bonding of sokb::n:d layers of IJl.lllerial,
`in paJticular, IIOldcring of the target lll8lerial to its backing plale; pn:sswc assisted curing of stnldW'al lldJJeams used to join a finnr.d cover
`pl.ale (S2) to a backing plate (SO) which between them fonn passages for ftuid cooling; and bonding an eJtCtricaJ insulating layer to the bact
`l\ll'face of the backing ptau:. 1be preaurc to mist in bonding is typicalJy applied by an autDClave. The cooling ftuid paasa,ges disposed
`be1ween a cover and a tinned baddng plare can be sealed by using laser welding 01 eJccucn beam welding rathcJ than closing the cooling
`pass8&ll':I wilh lbUc1ural adhesives.
`
`Page 388 of 1542
`
`

`

`..
`
`FOR THE PURPOSES OF INFORMATION ONLY
`
`Codes used to identify Siaics pany to the PCT en the from pages of pamphlets publishing international
`applicaliom under the PCT.
`
`..
`AM
`Anllalia
`AT
`Aaslria
`AU A - .
`...
`btladca
`n
`8q;lla
`a..tt..FMo
`..,
`Balpria
`
`11G
`
`.....
`
`8nm
`IIR
`lldam
`BY
`c...i.
`CA
`c-.1 Afrlam llep,blic
`CP
`Cca,o
`CG
`DI
`Swillmlad
`a O.""-
`CM c -
`Oma
`Of
`cs
`I
`I akia
`C
`a.
`c.dl Repal,lic
`DZ Ga-,
`
`- Dmlllrtl:
`- e...
`
`s,.a
`IS
`n
`Fillal
`n ~
`Gatm
`GA
`
`ca
`U...tll-,,:lcm
`GE 0-.-
`Gulaa
`Gl'I
`Gil
`G,aa
`BU
`
`..
`
`...,.,
`...,
`....,.
`IT
`II'
`D
`It-,.
`x,..,_
`llG
`KP ~ l'leq,lo'• Rep,,blll:
`ol llt.oml
`D
`11.i,ik of Koa
`ID,
`JCantblm
`u
`I ~
`I
`LIi:
`Sril.ab
`La
`Lamia
`LT ~
`w
`l..maDllcaa
`LV
`Lima
`MC
`Mlmc.o
`JG
`Rep,blic d Moldo¥a
`MG
`Madlpar
`ML
`Mali
`MN
`Mil
`
`hllad
`
`........
`,..__.
`
`MW
`MX
`NB
`NL
`NO
`NZ
`PL
`
`"
`
`Malawi
`Maim
`Nl,la'
`Na!a'-11
`Norway
`Ne1P Zcallal
`PollDil
`l'llrlupl
`
`._..
`
`110
`au
`Ruaila FederMiDo
`Sada
`SD
`s ......
`SE
`s..,..._
`SG
`Slow:ma
`SI
`sx.
`Slonlia
`SN
`Saocpl
`sz
`Swuilad
`TD
`Cbld
`Top
`TG
`TJ ~
`nmmd ... T«.o
`TT
`UA
`Ubaioe
`UG
`us
`oz
`VN
`
`.,...
`
`U1lla:d Sias of AIDaiQ
`Ultlr.:tilla
`VidN-,
`
`Page 389 of 1542
`
`

`

`W096/23085
`
`PCT/US95/0l089
`
`AUTOCLAVE BONDING OF SPUITERING
`
`TARGET ASSEMBLY
`
`5
`
`field of the Invention
`This invention relates to techniques used to fabricate internally cooled
`
`sputtering target assemblies generally used in planar magnetron sputtering, and in
`
`l O
`
`particular to fabrication techniques used to enhance and assure parallelism between
`
`the surface of a target material and the substrate being s~tter deposited.
`
`Bac)cgmund of the Invention
`Sputtering describes a number of physical techniques commonly used in,
`
`15 .
`
`for example, the semiconductor industry for the deposition of thin films of various
`
`metals such as aluminwn, aluminum alloys, refractory metal silicides, gold.
`
`copper, titanium-tungsten, rungsten, molybdenum, tantalum, indiwn-tin--0xide
`
`(ITO) and less commonly silicon dioxide and silicon on an item (a substrate), for
`
`example a wafer or glass plate being processed. In general, the techniques involve
`
`20
`
`producing a gas plasma of ionized inert gas "particles" (atoms or molecules) by
`
`using an electrical field in an evacuated chamber. The ionized particles are then
`
`directed toward a "target" and collide with it. As a result of the collisions, free
`
`atoms are released from the surface of the target as atom sized projectiles,
`
`essentially converting the target material to its gas phase. Most of the free atoms
`which escape the target surface condense (the atomic sized projectiles lodge on the
`
`25
`
`surface of the substrate at impact) and fonn (deposit) a thin film on the surface of
`
`the object (e.g. wafer, substrate) being processed, which is located a relatively
`
`1
`
`SUBSTITUTE SHEET (RULE 26)
`
`Page 390 of 1542
`
`

`

`W09&'23085
`
`PCT/1JS95l0l089
`
`short distance from the target.
`
`One common sputtering technique is magnelron sputtering. When
`proces.wg wafers using magnetron sputtering, a magnetic field is used to
`concentrate sputtering action in th