`
`(12)
`
`United States Patent
`Zhang et al.
`
`(10) Patent No.:
`(45) Date of Patent:
`
`US 7,381,657 B2
`Jun. 3, 2008
`
`(54) BIASED PULSE DC REACTIVE
`SPUTTERING OF OXDE FILMS
`
`(75) Inventors: Hongmei Zhang, San Jose, CA (US);
`Mukundan Narasimhan, San Jose, CA
`(US); Ravi B. Mullapudi, San Jose,
`CA (US); Richard E. Demaray
`)
`Portola Valley, CA (US)
`s
`s
`(73) Assignee: Spring Works, LLC. Minnetonka, MN
`(US)
`Subject to any disclaimer, the term of this
`past its, adjusted under 35
`M
`YW-
`y U days.
`
`(*) Notice:
`
`(21) Appl. No.: 10/954, 182
`(22) Filed:
`Oct. 1, 2004
`
`(65)
`
`Prior Publication Data
`US 2005/0048802 A1
`Mar. 3, 2005
`
`Related U.S. Application Data
`(63) Continuation of application No. 10/101,863, filed on
`Mar. 16, 2002.
`(51) Int. Cl.
`(2006.01)
`HOIL 2/3
`2006.O1
`HOIL 2L/2469
`( So. 438/770: 438/771:
`(52) U.S. Cl
`2 Sii 091.257/E21 69; 257/E21 2: 257FE21.4 62.
`• - us
`• Y-1 s
`• 1s 257E23 33
`h
`(58) Field of Classification S
`4387 69
`O SSCO Sea
`................
`438/770, 771 787, 788: 257/E23.132. E21 091.
`s
`s
`s 257/E21,169 E21 2 E2 i 462
`S
`lication file f
`1 •
`s - s h hi s
`ee application file for complete search history.
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`(Continued)
`Primary Examiner Michelle Estrada
`(74) Attorney, Agent, or Firm—Finnegan, Henderson,
`Farabow, Garrett & Dunner, LLP
`(57)
`ABSTRACT
`
`A biased pulse DC reactor for sputtering of oxide films is
`presented. The biased pulse DC reactor couples pulsed DC
`at a particular frequency to the target through a filter which
`filters out the effects of a bias power applied to the substrate,
`protecting the pulsed DC power supply. Films deposited
`utilizing the reactor have controllable material properties
`Such as the index of refraction. Optical components such as
`waveguide amplifiers and multiplexers can be fabricated
`using processes performed on a reactor according to the
`present inention.
`
`21 Claims, 27 Drawing Sheets
`
`PDC POWER
`
`Page 1 of 47
`
`APPLIED MATERIALS EXHIBIT 1001
`
`
`
`US 7,381,657 B2
`Page 2
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