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`UNITED STATES PATENT AND TRADEMARK OFFICE
`___________________
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`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`___________________
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`APPLIED MATERIALS, INC.
`Petitioner,
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`v.
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`DEMARAY LLC
`Patent Owner.
`
`
`___________________
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`Case IPR2021-00106
`Patent No. 7,381,657
`___________________
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`PATENT OWNER’S PRELIMINARY RESPONSE
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`
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`
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`Mail Stop “PATENT BOARD”
`Patent Trial and Appeal Board
`U.S. Patent and Trademark Office
`P.O. Box 1450
`Alexandria, VA 22313-1450
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`10911352
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`TABLE OF CONTENTS
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`Case IPR2021-00106
`Patent No. 7,381,657
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`I.
`II.
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`B.
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`C.
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`Page
`Introduction ................................................................................................... 1
`Fintiv Factors Favor Discretionary Denial Of Institution Under 35
`U.S.C. § 314(a) ............................................................................................. 4
`A.
`Fintiv Factor #1: No Evidence That The District Court
`Would Grant A Stay If A Proceeding Is Instituted ............................ 4
`Fintiv Factor #2: Jury Trial Is Expected To Occur Before
`The Final Written Decision ................................................................ 5
`Fintiv Factor #3: There Has Been Immense “Investment In
`The Parallel Proceeding By The Court And Parties” ......................... 6
`Fintiv Factor #4: There Is Substantial “Overlap Between
`Issues Raised In The Petition And In The Parallel
`Proceeding” ........................................................................................ 7
`Fintiv Factor #5: The Defendants In The Texas Litigations
`Are Real-Parties-In-Interest ............................................................... 8
`Fintiv Factor #6: “Other circumstances that impact the
`Board’s exercise of discretion, including the merits” favor
`non-institution. ................................................................................... 8
`III. Technology Background ............................................................................... 8
`A.
`The ’657 Invention Describes A Unique Combination That
`Solves A Problem Unique To Reactive Sputtering ............................ 8
`Prior Art Fails To Teach The Solution Claimed By the ’657
`Patent ................................................................................................ 13
`1.
`Licata Does Not Disclose A Pulsed DC Alternating
`Between Negative And Positive Voltages Or A Narrow Band
`Rejection Filter ................................................................................. 14
`2.
`Kelly Does Not Disclose A Filter Coupled Between
`The Target And Its Pulsed DC Power Supply To The Target ......... 18
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`D.
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`E.
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`F.
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`B.
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`Page
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`B.
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`C.
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`3.
`Collins Does Not Suggest The Use Of The Claimed
`Filter Type Or The Claimed Reactor Process .................................. 19
`IV. The Petition Fails To Show A Likelihood Of Success ............................... 22
`A.
`Petitioner’s Proposed Inclusion Of A Bipolar Pulsed DC
`Power Source In Licata And Poisoned Mode Fails To
`Consider Licata’s Mechanism For Forming TiN Film
`(Elements 1(c), 1(f), 2(c) and 2(f)). .................................................. 22
`Petitioner Fails To Explain Why A POSITA Would Have
`Used Licata-Kelly System For Depositing Films On An
`Insulating Substrate (Claims 2 And Dependent Claims) ................. 31
`Prior Art Does Not Disclose Or Suggest Using A Claimed
`Filter With The Claimed Reactor Process (Elements 1(c)-(d)
`and 2(c)-(d)) ..................................................................................... 32
`1.
`Collins does not suggest using a narrow band rejection
`filter for the Kelly-Licata combination. ........................................... 33
`2.
`None of the other references suggests using a narrow
`band rejection filter for the Kelly-Licata combination .................... 38
`3.
`Petitioner has failed to articulate a reason to combine
`Collins with Licata-Kelly ................................................................. 56
`Petitioner’s analysis of other claims do not cure the
`deficiencies above ............................................................................ 61
`The Petition Should Be Denied Under 35 U.S.C. § 325(d) ........................ 62
`A.
`The Petition Relies On The Same Or Substantially The Same
`Arguments Overcome During Prosecution ...................................... 62
`The Petition Fails To Show That The Office Erred In A
`Manner Material To The Patentability Of The Challenged
`Claims ............................................................................................... 69
`VI. Conclusion .................................................................................................. 70
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`V.
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`D.
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`B.
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`TABLE OF AUTHORITIES
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`Case IPR2021-00106
`Patent No. 7,381,657
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` Page(s)
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`Cases
`ActiveVideo Networks, Inc. v. Verizon Comm’ns, Inc.,
`694 F.3d 1312 (Fed. Cir. 2012) ........................................................ 24, 27, 28, 44
`
`Advanced Bionics, LLC v. MED-EL Elektromedizinische Geräte
`GmbH,
`IPR2019-01469, Paper 6 (Feb. 13, 2020) ..................................................... 62, 66
`Apple Inc. v. Fintiv, Inc.,
`IPR2020-00019, Paper 15 (P.T.A.B. May 13, 2020) ..................................passim
`Arendi,
`832 F.3d at 1362-66 ............................................................................................ 60
`Becton, Dickinson & Co. v. B. Braun Melsungen AG,
`IPR2017-01586, Paper 8 (P.T.A.B. Dec. 15, 2017) ........................................... 62
`Belden Inc. v. Berk-Tek LLC,
`805 F.3d 1064 (Fed. Cir. 2015) .............................................................. 29, 32, 60
`Bentley Motors Ltd. v. Jaguar Land Rover Ltd.,
`IPR2019-01539, Paper 16 (P.T.A.B. Oct. 2, 2020) .............................................. 6
`Cont’l Intermodal Grp. – Trucking LLC v. Sand Revolution LLC,
`Case No. 7:18-cv-00147-ADA (July 22, 2020) .................................................... 4
`InTouch Techs., Inc. v. VGO Communications, Inc.,
`751 F.3d 1327 (Fed. Cir. 2014) .......................................................................... 60
`In re Kahn,
`441 F.3d 977 (Fed. Cir. 2006) ............................................................................ 30
`KSR Int’l Co. v. Teleflex, Inc.,
`550 U.S. 398 (2007) .......................................................................... 27, 30, 44, 46
`Monarch Knitting Mach. Corp. v. Sulzer Morat GmbH,
`139 F.3d 877 (Fed. Cir. 1998) ............................................................................ 27
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`Page(s)
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`Polaris Indus., Inc. v. Arctic Cat, Inc.,
`882 F.3d 1056 (Fed. Cir. 2018) .......................................................................... 30
`Securus Techs., Inc. v. Global Tel*Link Corp.,
`701 F. App’x 971 (Fed. Cir. 2017) ............................................................... 23, 32
`Star Sci., Inc. v. R.J. Reynolds Tobacco Co.,
`655 F.3d 1364 (Fed. Cir. 2011) .......................................................................... 30
`In re Van Os,
`844 F.3d 1359 (Fed. Cir. 2017) .......................................................................... 45
`VLSI Tech. LLC v. Intel Corp.,
`Case No. 1:19-cv-00977-ADA ............................................................................. 5
`William Wesley Carnes, SR., Inc. v. Seaboard Int’l Inc.,
`IPR2019-00133, Paper 10 (PTAB May 8, 2019) ............................................... 24
`Statutes
`35 U.S.C. § 314(a) ..................................................................................................... 4
`35 U.S.C. § 325(d) ............................................................................................... 2, 62
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`EXHIBIT LIST
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`U.S. Pat. No. 6,117,279 to Smolanoff et al.
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`Declaration of Dr. Alexander Glew in Support of Patent Owner's
`Preliminary Response
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`Real Parties-in-Interest’s First Amended Preliminary Invalidity
`Contentions dated Feb. 12, 2021 in consolidated actions of
`Demaray LLC v. Intel Corp., 6:20-cv-00634-ADA (W.D. Tex.) &
`Demaray LLC v. Samsung Electronics Co., Ltd. et. al., 6:20-cv-
`00636-ADA (W.D. Tex.)
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`Order Denying Motion for Preliminary Injunction, Dkt. 47, Applied
`Materials, Inc. v. Demaray LLC, 5:20-cv-05676-EJD (N.D. Cal.
`Dec. 23, 2020)
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`Scheduling Order, Dkt. 33 in consolidated actions of Demaray LLC
`v. Intel Corp., 6:20-cv-00634-ADA (W.D. Tex.) & Demaray LLC
`v. Samsung Electronics Co., Ltd. et. al., 6:20-cv-00636-ADA
`(W.D. Tex.)
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`Ex. 2001
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`Ex. 2002
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`Ex. 2003
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`Ex. 2004
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`Ex. 2005
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`Ex. 2006
`Ex. 2007
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`U.S. Pat. No. 6,306,265 to Fu et al.
`Prosecution History of U.S. Pat. No. 7,544,276
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`Introduction1
`During the prosecution of the parent application, the Office and the
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`I.
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`applicants discussed Smolanoff-based combinations in detail. Smolanoff (Ex.
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`2001) and the primary reference in this proceeding, Licata, share one common
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`inventor; and their reactor schemes even use the same numbering scheme for
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`similar elements. See below.
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`Licata cover
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`Smolanoff cover
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`In this proceeding, Petitioner uses Licata in combination with Kelly for the
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`same elements that the examiner asserted Smolanoff disclosed. See Ex. 1004 at
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`957 (examiner finding Smolanoff disclosed target, substrate, RF bias on substrate,
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`and pulsed DC power supply to the target). Regarding the missing narrow band-
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`rejection filter, Petitioner reiterates what the examiner considered and ultimately
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`found inadequate: that the type of filter alleged was merely a design choice for
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`1 All emphasis are added unless otherwise noted.
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`blocking RF energy. E.g., Pet. 30. But the applicants repeatedly explained the
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`importance of the filter type for the claimed reactor system that combined a pulsed
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`DC power supply to the target with an RF bias on the substrate:
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`The narrow band rejection filter allows the combination of pulsed-dc
`power to the target (where the target voltage is oscillated between
`positive and negative voltages) and an RF bias on the substrate. A
`filter that blocks too many of the constituent frequencies of the pulsed
`DC waveform results in the target voltage not attaining a positive
`voltage. A filter that does not block the RF bias voltage can result in
`failure of the DC power supply.
`Ex. 1004 at 978-79. The examiner accepted that fact and found that the claims
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`reciting a claimed reactor system combined with the claimed narrow band-
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`rejection filter were allowable. Id. at 992. The Petition therefore presents
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`substantially the same references and arguments as those the Office has already
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`considered during prosecution, and it should be denied under 35 U.S.C. § 325(d).
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`Petitioner has also not shown a reasonable likelihood that it would prevail on
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`at least one claim. First, Licata’s TiN deposition involves reaction of nitrogen and
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`titanium “on the substrate surface” through thermally energizing the substrate or
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`biasing the substrate. 1010 at 10:17-31. Licata does not disclose that nitrogen
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`reacts with the target or that the target is poisoned. Id. Petitioner does not explain
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`why, given Licata’s express disclosure regarding the reaction site, a POSITA
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`would have thought it useful to apply a claimed bipolar pulsed DC power supply to
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`the target to suppress arcing associated with a poison mode on the target surface,
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`when reactions take place on the substrate opposite the target. Pet. 20-26.
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`Second, Petitioner does not explain why a POSITA would have combined
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`Licata and Kelly for depositing a film on insulating substrate (claims 2 and
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`dependent claims) instead of just using Kelly that allegedly already “discloses
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`depositing alumina films onto ‘glass substrates.’” Pet. 15 (emphasis in original).
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`If Kelly already does everything that Licata can do and more (including providing
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`a bipolar pulsed DC), why would a POSITA have gone through the trouble of
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`modifying Licata in light of Kelly instead of just using Kelly? Petitioner does not
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`answer that qustion. Without this basic analysis, no prima facie case of analysis
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`could be made.
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`Third, Petitioner presents no competent evidence that a POSITA would have
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`found a reason to combine a claimed filter with the claimed reactor system. In
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`particular, Collins cited by Petitioner involves only RF power supplies with RF
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`matching circuits. Ex. 1071, Fig. 23. Petitioner does not explain why a filter used
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`in such a system would be suitable for a claimed reactor system. Pet. 36-40. But
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`even if Collins’ disclosures were considered, a POSITA would not have concluded
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`that a filter of the claimed type would be needed. Specifically, Collins discloses
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`that if the frequencies of the two power supplies are one octave or more apart, a
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`low-pass or high-pass filter with the right cutoff frequencies would be suitable.
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`Id., 24:44-54. Licata-Kelly’s pulsed DC frequency is 100 kHz (Ex. 1059 at Fig. 2)
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`and Licata’s RF bias is 13.56 MHz, more than seven octaves apart. Petitioner does
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`not explain why Collins (or any of its other filter references) suggests the claimed
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`combination of the claimed filter with the claimed reactor system having pulsed-
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`DC power to the target (where the target voltage is oscillated between positive and
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`negative voltages) and an RF bias on the substrate.
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`For these and the reasons below, the institution should be denied.
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`II. Fintiv Factors Favor Discretionary Denial Of Institution Under 35
`U.S.C. § 314(a)
`A. Fintiv Factor #1: No Evidence That The District Court Would
`Grant A Stay If A Proceeding Is Instituted
`Petitioner offers no evidence that Judge Albright would grant a stay if an
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`IPR is instituted; and Judge Albright generally does not do so. Pet. 70; Cont’l
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`Intermodal Grp. – Trucking LLC v. Sand Revolution LLC, Case No. 7:18-cv-
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`00147-ADA (July 22, 2020) (order denying motion to stay instituted IPR). Judge
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`Davila in the Northern District of California also summarily rejected Petitioner’s
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`attempt to enjoin the Texas litigation from proceeding. Ex. 2004. This factor
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`weighs in favor of denying institution.
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`B.
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`Fintiv Factor #2: Jury Trial Is Expected To Occur Before The
`Final Written Decision
`The second Fintiv Factor is “proximity of the court’s trial date to the Board’s
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`projected statutory deadline for a final written decision.” Fintiv, Paper 11 at 6. As
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`Fintiv explains, “[i]f the court’s trial date is earlier than the projected statutory
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`deadline, the Board generally has weighed this fact in favor of exercising authority
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`to deny institution under NHK.” Id., Paper 11 at 9. Here, jury selection for the
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`trial in the district court action is set to begin on December 27, 2021, about 4.5
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`months before an expected final written decision (“FWD”) in this case. Ex. 2005
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`[scheduling order] at 4. This factor weighs in favor of denying institution.
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`Petitioner speculates that the trial may be delayed, e.g., due to COVID-19.
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`Pet. 70-71. This is speculation: Indeed, Judge Albright continues to hold in-
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`person jury trials, including one that starts today in VLSI Tech. LLC v. Intel Corp.,
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`Case No. 6:21-cv-00057-ADA. There is no evidence to indicate there will be a
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`delay. In addition, the Board has made clear that it “generally take[s] courts’ trial
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`schedules at face value absent some strong evidence to the contrary.” Apple Inc. v.
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`Fintiv, Inc., IPR2020-00019, Paper 15, at 12 (P.T.A.B. May 13, 2020). Because
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`Petitioner fails to provide any non-speculative evidence regarding the timing of
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`trial, the Board should abide by its general practice and accept the scheduled trial
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`date as it is.
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`C. Fintiv Factor #3: There Has Been Immense “Investment In The
`Parallel Proceeding By The Court And Parties”
`Here, the deadline for institution is May 16, 2021. By that time, the parties
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`will have expended significant resources in the district court litigation complying
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`with the district court’s scheduling order, including:
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`• Claim construction briefing and Markman hearing
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`• Commencement of discovery
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`• Final infringement and invalidity contentions
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`The parties’ investment will also continue to increase after institution,
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`especially because Judge Albright generally does not grant a stay pending
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`instituted IPRs. See discussion re Factor #1. For example, because the district
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`court trial date precedes the projected FWD deadline in this proceeding, the parties
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`and the district court will have invested a significant amount of time and resources
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`after institution but before the FWD deadline in preparation for the trial, and this
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`would include completion of fact and expert discovery, pre-trial motion practices
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`and trial preparation.
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`The Board has found that “additional investment of time and resources by
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`the District Court and the parties” occurring “after institution but before our final
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`decision” also weighs “strongly in favor of denying institution.” Bentley Motors
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`Ltd. v. Jaguar Land Rover Ltd., IPR2019-01539, Paper 16, at 9-10 (P.T.A.B. Oct.
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`2, 2020). Factor 3 therefore weighs strongly in favor of denying institution to
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`avoid duplicative efforts.
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`D. Fintiv Factor #4: There Is Substantial “Overlap Between Issues
`Raised In The Petition And In The Parallel Proceeding”
`The real-parties-in-interest have included all the asserted combinations in the
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`district court action and against all challenged claims at issue here. Ex. 2003 at 6
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`n.1, 19, 22-25. This fact favors denying institution. Petitioner asserts that “there is
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`no evidence that the same invalidity grounds sought here will be at-issue in the
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`Texas Litigation.” Pet. 71. But the real-parties-in-interest have indicated in their
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`invalidity contentions that they will continue to use the asserted art for invalidity
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`purposes in the district court, and will continue to pursue cumulative grounds.2 Id.
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`at 29-30, 30 n.5. Based on admissible evidence before the PTAB, the fourth Fintiv
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`factor weighs in favor of denying institution.
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`2 For example, instead of Licata and Kelly, RPIs can use Smolanoff (Ex.
`2001) discussed during prosecution and allegedly disclosed the same properties as
`Barber. See Ex. 1052 at 1356; Ex. 1004 at 957. Under the “design choice” theory,
`the RPIs can use any of the other filter references in substantially the same way.
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`E.
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`Fintiv Factor #5: The Defendants In The Texas Litigations Are
`Real-Parties-In-Interest
`As in Fintiv, this factor weighs in favor of denial, as defendants in both
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`Texas Litigations are real parties-in-interest in this IPR and coordinated with
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`Petitioner in filing the petition. Pet. 1, 71.
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`F.
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`Fintiv Factor #6: “Other circumstances that impact the Board’s
`exercise of discretion, including the merits” favor non-institution.
`Petitioner claims that they were diligent in filing the petition and the petition
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`is strong. Pet. 71-72. Patent Owner presents its response on the merits in Sections
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`III-V, and Petitioner has not shown a reasonable likelihood that it would prevail on
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`at least one claim.
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` * * *
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`In sum, the Board should exercise discretion to deny institution under the
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`Fintiv decision.
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`III. Technology Background
`A. The ’657 Invention Describes A Unique Combination That Solves
`A Problem Unique To Reactive Sputtering
`U.S. 7,381,657 is entitled “Biased Pulse DC Reactive Sputtering of Oxide
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`Films.” Ex. 1001 at cover. The ’657 patent provides a packaged solution to
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`address problems associated with target poisoning in reactive sputtering. Although
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`the preferred embodiments relate specifically to “deposition of oxide and
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`oxynitride films by pulsed DC reactive sputter,” (id., 1:11-13), the disclosed
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`reactor system in combination with the claimed filter can also be used for nitride
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`films. Ex. 1001 at 3:5-3:9 (approaches are useful with a broad array of process
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`gasses “includ[ing] combinations of Ar, N2, O2, C2F6, CO2, CO and other process
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`gasses”).
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`The claims of the ’657 patent require several interrelated steps of a reactor
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`process. In addition to “providing a process gas” and “providing a magnetic field
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`to the target,” it also requires at least
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`• “providing pulsed DC power to the target through a narrow band
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`rejection filter such that the [voltage on the] target alternates between
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`positive and negative voltages”; and
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`• “providing an RF bias at a frequency that corresponds to the narrow band
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`rejection filter to the substrate”
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`Ex. 1001, 23:2-15 (cl. 1); see also 23:16-27 (cl. 2).
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`For the ’657 inventions, the target “provides material to be deposited on
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`[the] substrate.” See id., 5:27-30. In some preferred embodiments, the target “also
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`functions as a cathode when power is applied to it.” Id., 5:30-32.
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`The bipolar pulsed DC, resulting in a target voltage oscillating between
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`negative and positive potentials, prevents arcing associated with reactively
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`sputtering films such as oxides, nitrides and oxynitrides. Id., 5:38-41. This is
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`because in the presence of reactive gases such as oxygen and/or nitrogen, films of
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`oxides, nitrides or oxynitrides could build up on the surface of the target. See, id.,
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`11:66-12:9, 4:54-55; Glew (Ex. 2002), ¶ 29. Under steady state DC voltage
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`conditions (e.g., steady negative voltage conditions), “[t]he insulating surface
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`charges up and result in arcing during process. This arcing can damage the power
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`supply, produce particles and degrade the properties of the deposited film.” Id.,
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`4:54-57; see also 12:10-15. By reversing the polarity of the target voltage to
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`positive as needed, “the insulating layer on the surface of target . . . is discharged”
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`during the positive period (that is, the surface is neutralized during the period),
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`“and arcing is prevented.” Id. at 5:39-41, 12:15-12:21.
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`An RF bias power is supplied to the substrate to, for example, “dandif[y]
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`(sic) [densify]” the deposited film and to “substantially eliminate[]” columnar
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`structures that may negatively affect the film quality. Id., 5:66-6:6. The use of RF
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`bias power, however, creates the danger that the DC power supply may be
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`damaged. Id. at 5:56-57. A filter (15), placed between the pulsed DC power
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`supply and the target, “prevents the bias power from power supply 18 from
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`coupling into pulsed DC powers supply 14.” Id. at 5:56-57.
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`But this is not the whole story because the filter must also ensure that it does
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`not “distort[] the pulses generated by the pulsed-DC power supply.” Ex. 1052 at
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`1134. This led to the requirement that the RF bias needs to be provided at “a
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`frequency that corresponds to the narrow band rejection filter.” Id. at cl. 1; see
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`also cl. 2 (“RF bias that corresponds to the narrow band rejection filter”).
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`The use of the claimed narrow band rejection filter that operates at a
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`frequency of the RF bias power on the substrate is a unique insight of the
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`inventors, specific to a reactor system/process that uses combines a bipolar pulsed
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`DC power to a target (e.g., to help suppress arcing when reactively sputtering) with
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`an RF bias on a substrate is an insight absent from prior art. See Ex. 1004 at 978-
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`79 (Applicants rebutting examiner’s assumption that filter selection is merely a
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`design choice, noting “[t]he narrow band rejection filter allows the combination of
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`pulsed-dc power to the target (where the target voltage is oscillated between
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`positive and negative voltages) and an RF bias on the substrate. A filter that
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`blocks too many of the constituent frequencies of the pulsed DC waveform
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`results in the target voltage not attaining a positive voltage. A filter that does not
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`block the RF bias voltage can result in failure of the DC power supply.”).
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`Licata—which is substantially the same as Smolanoff discussed during
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`prosecution—for example, is silent on the suitable type of RF filters for its DC
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`power source coupled to a target. See Ex. 1010, 6:40-41. Kelly, which uses a
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`bipolar pulsed DC power supply for the target and optionally an RF bias on the
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`substrate, does not mention the use of a filter. See Ex. 1059 at Abstract &
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`Experiment section; 1048 at 3 (Table 1, listing substrate bias conditions and target
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`power supply types). Collins, which involves only RF power sources for its
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`reactor systems/processes (see Ex. 1071, Figure 23), states that if the frequency of
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`an RF power supply to be blocked (e.g., f2) is “widely separately (e.g., by an
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`octave)” from the frequency (e.g., f1) of the power supply to be protected, “then the
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`various RF filters . . . can be suitable high-pass and low-pass filters with the
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`suitably selected cut-off frequencies.” Ex. 1071 at 24:44-50. Collins recommends
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`the use of “bandpass or band rejection filters centered at the appropriate
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`frequencies” if “the two frequencies . . . are not sufficiently separated.” Id. at
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`24:50-54.
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`In the ’657 patent, however, however, the RF frequency to be blocked
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`(2MHz) is more than two octaves away from the pulsed DC frequency (up to
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`350kHz). Ex. 1001, 5:48-50, 5:57-63; Glew, ¶ 83 (explaining one octave means
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`f1/f2=2 or ½ and n-octave means f1/f2 =2n or 1/2n). As will be explained further
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`below in Section IV.C.2, none of the other references suggests using a narrow band
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`rejection filter in combination with the claimed reactor processes. In fact, if a
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`POSITA were to apply Collin’s disclosures to a claimed reactor process, as
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`Petitioner suggests, they would have found it sufficient to use a low-pass filter to
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`block the higher frequency RF bias power that is more than two octaves away,
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`instead of the claimed “narrow band” rejection filter. Glew, ¶ 85.
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`B.
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`Prior Art Fails To Teach The Solution Claimed By the ’657
`Patent
`All grounds of challenge rely on at least three references: Licata (Ex. 1010),
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`Kelly (Ex. 1059) and Collins (Ex. 1071). These references, singly or in
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`combination, do not disclose the inventions.
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`1.
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`Licata Does Not Disclose A Pulsed DC Alternating Between
`Negative And Positive Voltages Or A Narrow Band
`Rejection Filter
`The “primary objective” of Licata “is to provide a method of cleaning the
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`surface of a semiconductor wafer prior to the metallization thereof that overcomes
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`the disadvantages of” prior art processes. Ex. 1010, 2:42-47. Unlike the prior art
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`process, Licata proposes a process in which the cleaning of the wafer surface took
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`place in the same chamber as the metal deposition step. Id. at 2:53-59. The
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`cleaning, i.e., removal of contaminants from the surface of the wafer substrate, is
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`“carried out by a soft sputter etch with ions of an inert gas such as argon,” and
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`preferably “by the use of a plasma that includes ions of the material to be deposited
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`in the metallization process.” Id. at 2:59-63. As one example, Licata proposes
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`using a “high energy titanium metal atoms” to “simultaneously sputter clean and
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`react with the surface contaminants.” Id. at 3:58-61; see also 3:18-25.
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`The “precleaning module 10” that Petitioner relies on is shown below. Id. at
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`5:62-63.
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`The DC power supply 20 is connected to the target 16 via an RF filter. Ex.
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`1010, 6:34-41. The DC power supply “produces a negative potential on the target
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`16,” and “[t]he negative potential accelerates positive ions from the plasma 23
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`toward surface 21 of the target 16.” Id. at 6:46-50. Licata’s DC power supply 20
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`is not described as a bipolar pulsed DC power supply that causes the target voltage
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`to oscillate between positive and negative voltages.
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`Plasma 23 provides a “source of positive ions of gas that are accelerated
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`toward and against the negatively charged surface 21, where they eject particles of
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`coating material from the target 16.” Id. at 6:56-59. The ejected particles are
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`typically neutral but are ionized in flight as they pass through volume 26 to be
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`deposited on wafer 15. Id. at 7:8-19. “In-flight ionization of sputtered particles in
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`the space 11 is carried out by inductively coupling RF energy into the volume 26
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`from an RF coil 30 that surrounds the volume 26.” Id. at 7:19-21. In the above
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`configuration, an RF generator 32 (preferably 2 MHz) is connected to the coil 30
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`via a matching network 33 to provide the RF coil 30 with the power needed “to
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`form the plasma in the volume 26.” Id. at 7:26-33.
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`Licata’s substrate 15 is mounted on the substrate holder 14, which is in turn
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`connected to an RF bias power supply 27 via a matching network 28. Id. at 6:41-
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`45. The substrate 15 is negatively biased to “provide force to accelerate the
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`positively ionized sputtered particles toward and onto the substrate surface.” Id. at
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`9:6-14. The power supply 27 “is preferably an RF generator that operates in the
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`range of” between 0.2 and 80MHz, such as at 13.56 MHz. Id. at 9:14-16.
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`In some preferred embodiments, a titanium nitride film may be formed on
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`substrate 15 “over the film of elemental titanium.” Id. at 10:17-20. In forming the
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`nitride, nitrogen gas is “reacted with titanium on the substrate surface,” such as
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`“by thermally energizing the substrate 15 or by biasing the substrate 15 so as to
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`form a plasma such as plasma 75 adjacent the surface of the substrate to stimulate a
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`reaction between the nitrogen in the gas at the substrate surface and titanium
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`impinging onto or deposited on the substrate 15.” Id. at 10:23-31. That is, Licata
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`forms the TiN film by having nitrogen react directly with titanium on the substrate
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`surface, with no mentioning of reaction with titanium at the target. Glew, ¶ 66.
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`Hence, Licata does not express any concern with nitride build-up on the target in
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`forming the TiN film. Id. This differs from the ’657 patent and Kelly.
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`Licata is silent on the nature of the “RF filter” 22 connected to the target.
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`Id., 6:40-41. Certainly, Licata never suggests that the RF filter 22 is a narrow band
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`rejection filter, as claimed by the challenged claims. See Ex. 1010 generally. In
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`relevant aspects, Licata provides substantially the same disclosure as Smolanoff
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`that the examiner and the applicant discussed at length during the prosecution of
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`the parent ’356 patent and that the examiner considered during the ’657 patent
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`prosecution. E.g., Ex. 1052 at 1356, 1431-32, 1456, 1471; Ex. 1004 at 279, 630,
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`957.
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`Licata cover
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`Smolanoff cover
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`As shown above, both have an RF filter 22 coupled between a DC power
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`supply that may be “pulsed” and a target;3 both apply an RF bias on a substrate,
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`and both include an RF power supply for generating plasma in the volume between
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`the target and the substrate. But as the examiner’s allowance of the issued claims
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`show, these disclosures, in view of the state of the art, do not render obvious the
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`claimed type of filter for use in the claimed reactor system or method. Ex. 1004 at
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`978-79 (applicants explaining why, Smolanoff notwithstanding, the claimed filter