United States Patent [19J
`Collins et al.
`
`I IIIII IIIIIIII Ill lllll lllll lllll lllll lllll lllll lllll lllll 111111111111111111
`US006077384A
`[11] Patent Number:
`[45] Date of Patent:
`
`6,077,384
`*Jun.20,2000
`
`[54] PLASMA REACTOR HAVING AN
`INDUCTIVE ANTENNA COUPLING POWER
`THROUGH A PARALLEL PLATE
`ELECTRODE
`
`FOREIGN PATENT DOCUMENTS
`
`0 403 418 A2 12/1990 European Pat. Off ..
`0 413 282 A2
`2/1991 European Pat. Off ..
`0 520 519 Al 12/1992 European Pat. Off ..
`
`[75]
`
`Inventors: Kenneth S. Collins, San Jose; Michael
`Rice, Pleasanton; John Trow, San Jose;
`Douglas Buchberger, Tracy; Eric
`Askarinam, Sunnyvale; Joshua
`Chiu-Wing Tsui, Santa Clara; David
`W. Groechel, Los Altos Hills;
`Raymond Hung, San Jose, all of Calif.
`
`[73] Assignee: Applied Materials, Inc., Santa Clara,
`Calif.
`
`[ *] Notice:
`
`This patent issued on a continued pros(cid:173)
`ecution application filed under 37 CFR
`1.53( d), and is subject to the twenty year
`patent term provisions of 35 U.S.C.
`154(a)(2).
`
`[21] Appl. No.: 08/597,577
`
`[22] Filed:
`
`Feb. 2, 1996
`
`Related U.S. Application Data
`
`[63] Continuation-in-part of application No. 08/521,668, Aug.
`31, 1995, abandoned, which is a continuation-in-part of
`application No. 08/289,336, Aug. 11, 1994, abandoned.
`Int. Cl.7 ....................................................... H05H 1/00
`[51]
`[52] U.S. Cl. .......................................... 156/345; 118/723 I
`[58] Field of Search .......................... 156/345; 118/723 I,
`118/723 IR; 216/68
`
`[56]
`
`References Cited
`
`U.S. PATENT DOCUMENTS
`
`4,123,316 10/1978 Tsuchimoto .
`4,261,762
`4/1981 King.
`4,350,578
`9/1982 Frieser et al. .
`
`(List continued on next page.)
`
`OTHER PUBLICATIONS
`
`Patent Abstracts of Japan, Publication No. 57045927 A, Mar.
`16, 1982 (Fujitsu Ltd).
`Patent Abstracts of Japan, Publication No. 07288196 A, Oct.
`31, 1995 (Tokyo Electron Ltd).
`Patent Abstracts of Japan, Publication No. 08017799 A, Jan.
`19, 1996 (Plasma Syst: KK).
`Patent Abstracts of Japan, Publication No. 62052714 A, Mar.
`7, 1987 (Olympus Optical Co Ltd; Toagosei Chem Ind Co
`Ltd).
`Patent Abstracts of Japan, Publication No. 06196446 A, Jul.
`15, 1994 (NEC Corp.).
`Coburn, W.J. "Increasing the Etch Rate Ratio oSiOiSi in
`Fluorocarbon Plasma Etching", IBM Technical Disclosure,
`vol. 19, No. 10, Mar. 1977.
`Matsuo, Seitaro. "Selective etching of Si02 relative to Si by
`plasma reactive sputter etching", J. Vac. Sc. Technology, vol.
`17, No. 2, Mar.-Apr. 1980.
`European Patent Office Communication pursuant to Article
`96(2) and Rule 51(2) EPC
`for Application No.
`94307307.2-2208, mailed Jan. 17, 1996.
`
`Primary Examiner-Thi Dang
`Attorney, Agent, or Firm-Michaelson and Wallace
`
`[57]
`
`ABSTRACT
`
`The invention is embodied by a plasma reactor for process(cid:173)
`ing a workpiece, including a reactor enclosure defining a
`processing chamber, a semiconductor window, a base within
`the chamber for supporting the workpiece during processing
`thereof, a gas inlet system for admitting a plasma precursor
`gas into the chamber, and an inductive antenna adjacent a
`side of the semiconductor window opposite the base for
`coupling power into the interior of the chamber through the
`semiconductor window electrode.
`
`(List continued on next page.)
`
`67 Claims, 55 Drawing Sheets
`
`155
`
`150
`
`147
`
`145
`
`15B
`
`140
`
`=
`
`Page 1 of 80
`
`APPLIED MATERIALS EXHIBIT 1071
`
`

`

`6,077,384
`Page 2
`
`U.S. PATENT DOCUMENTS
`
`4,427,516
`4,427,762
`4,430,547
`4,457,359
`4,512,391
`4,565,601
`4,711,698
`4,756,810
`4,786,352
`4,786,359
`4,793,897
`4,807,016
`4,810,935
`4,842,683
`4,870,245
`4,918,031
`4,948,458
`4,990,229
`5,000,113
`5,006,220
`5,015,330
`5,074,456
`5,085,727
`5,169,487
`5,187,454
`5,203,956
`5,241,245
`5,249,251
`5,258,824
`5,276,693
`
`1/1984 Levinstein et al. .
`1/1984 Takahashi et al. .
`2/1984 Yoneda et al..
`7/1984 Holden.
`4/1985 Harra .
`1/1986 Kakehi et al..
`12/1987 Douglas.
`7/1988 Lamont, Jr. et al. .
`11/1988 Benzing.
`11/1988 Stark et al. .
`12/1988 Dunfield et al. .
`2/1989 Douglas.
`3/1989 Boswell.
`6/1989 Cheng et al..
`9/1989 Price et al. .
`4/1990 Flamm et al..
`8/1990 Ogle .................................... 156/345 X
`2/1991 Campbell et al. .
`3/1991 Wang et al..
`4/1991 Hijikata et al. .
`5/1991 Okumura et al. .
`12/1991 Degner et al..
`2/1992 Steger.
`12/1992 Langley et al. .
`2/1993 Collins et al. ......................... 333/17.3
`4/1993 Hansen et al..
`8/1993 Barnes et al. .
`9/1993 Egalon et al. .
`11/1993 Carlson et al. .
`1/1994 Long et al. .
`
`5,277,751
`5,326,404
`5,346,578
`5,349,313
`5,392,018
`5,399,237
`5,401,350
`5,414,246
`5,423,945
`5,477,975
`5,514,246
`5,529,657
`5,556,501
`
`1/1994
`7/1994
`9/1994
`9/1994
`2/1995
`3/1995
`3/1995
`5/1995
`6/1995
`12/1995
`5/1996
`6/1996
`9/1996
`
`Ogle.
`Sato.
`Benzing et al. .
`Collins et al. .......................... 333/131
`Collins et al. .......................... 336/155
`Keswick et al. .
`Patrick et al.
`........................ 118/723 I
`Shapona.
`Marks et al..
`Rice et al..
`Blalock.
`Ishii.
`Collins et al. .
`
`FOREIGN PATENT DOCUMENTS
`
`0 601 468 Al 12/1992 European Pat. Off ..
`0 552 490 Al
`7/1993 European Pat. Off ..
`552-491-Al
`7/1993 European Pat. Off ..
`0 651 434 A2
`5/1995 European Pat. Off ..
`0 680 072 A2 11/1995 European Pat. Off ..
`0 727 807 Al
`8/1996 European Pat. Off ..
`0 742 577 A2 11/1996 European Pat. Off ..
`55-154582 12/1980
`Japan.
`57-155732
`9/1982
`Japan.
`61-147531 12/1984
`Japan.
`61-91377
`5/1986
`Japan.
`61-142744
`Japan.
`6/1986
`62-12129
`1/1987
`Japan.
`62-254428 11/1987
`Japan.
`63-9120
`1/1988
`Japan.
`WO 92/20833 11/1992 WIPO.
`
`Page 2 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 1 of 55
`
`6,077,384
`
`155
`
`150
`
`- - - MATCH - -
`
`147
`
`145
`
`158
`
`FIG. 1
`
`1.0
`0.9
`
`MAGNITUDE
`
`0.1
`0
`1KHZ
`
`FIG. 2
`
`130
`
`--
`( MAGNITUDE
`'
`V
`
`V
`
`FREQUENCY_)__
`
`.
`' r""1..
`.
`l
`.
`
`.. .
`.l ../
`A
`
`+20%
`0
`-20%
`
`PHASE
`
`FREQUENCY
`
`10MHz
`
`Page 3 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 2 of 55
`
`6,077,384
`
`1.0
`0.9
`
`-
`
`MAGNITUDE ~
`~
`r"....
`
`I
`
`PHASE_y
`
`\ V
`, r
`
`+20%
`0
`-20%
`
`PHASE
`
`MAGNITUDE
`
`0.1
`0
`1KHZ
`
`150
`
`155
`
`I
`
`FREQUENCY
`
`10MHz
`FIG. 3
`
`------ MATCH -------
`
`
`
`- --
`
`--
`105
`
`115
`
`140
`
`POWER
`SPLllTER
`
`130
`
`160
`
`FIG. 4
`
`Page 4 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 3 of 55
`
`6,077,384
`
`155
`
`145
`
`--
`
`105
`
`115
`
`135
`
`FIG. 5
`
`--
`
`MATCH
`
`140
`
`185
`
`205
`
`-
`-
`~ 00
`210
`
`I
`-
`-
`I
`-
`-
`
`175
`
`\ I
`- J
`-
`
`-
`-
`
`180
`)
`I
`
`0000 158 I
`
`200
`\l_
`
`-
`-
`
`105
`
`115
`
`135
`
`FIG. 6
`
`MATCH
`
`140
`
`Page 5 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 4 of 55
`
`6,077,384
`
`155'
`
`215
`
`140
`
`..L --
`
`215
`
`--
`
`140
`
`115
`
`135
`
`MATCH
`
`FIG. 7
`
`155'
`
`158
`
`150'
`
`-
`-
`
`-
`-
`158
`
`POWER
`SPLITIER
`
`130
`
`135
`
`MATCH
`
`--
`
`FIG. 8
`
`Page 6 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 5 of 55
`
`6,077,384
`
`220
`
`140
`
`155'
`
`150'
`
`58
`
`115
`
`MATCH
`
`135
`
`MATCH
`
`-
`
`-1
`
`-
`-
`
`170
`
`165
`
`130
`
`-
`-
`
`-
`-
`
`FIG. 9
`
`155
`
`150
`
`155'
`
`-
`-
`
`-
`-
`
`FIG. 10
`
`135
`
`MATCH
`
`140
`
`Page 7 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 6 of 55
`
`6,077,384
`
`155
`
`150
`
`155'
`
`~n~ct::t~~~~=t:!15.'SI
`t---a::r
`
`150'
`
`- -, -
`,
`..L
`
`220
`
`130
`
`135
`
`POWER
`SPLITTER
`
`140
`
`MATCH - -
`
`160
`
`FIG. 11
`
`155
`
`150
`
`155'
`
`--
`
`158
`
`220
`
`140
`
`--
`
`FIG. 12
`
`Page 8 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 7 of 55
`
`6,077,384
`
`150
`
`158
`
`130
`
`--
`
`MATCH
`
`140
`
`FIG. 13A
`
`150
`
`POWER
`SPLITIER
`
`MATCH
`
`160
`
`135
`
`115
`
`140
`
`FIG.
`
`13B
`
`Page 9 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 8 of 55
`
`6,077,384
`
`150
`
`170
`
`165
`
`130
`
`MATCH
`
`135
`
`FIG. 13C
`
`205
`
`I
`-
`-
`-
`-
`210 I
`--
`
`195
`
`I
`-
`-
`
`-
`-
`
`180
`
`100
`
`125
`
`-
`-
`
`-
`-
`
`130
`
`MATCH
`
`135
`
`FIG. 13D
`
`Page 10 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 9 of 55
`
`6,077,384
`
`150
`
`150
`
`150'
`
`130
`
`--
`
`235
`
`MATCH
`
`140
`
`FIG. 14
`
`. - - - - - - t MATCH
`
`155
`
`220
`
`130
`
`140
`
`FIG. 15
`
`Page 11 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 10 of 55
`
`6,077,384
`
`260
`
`CONTROLLER
`
`155
`
`150
`
`250
`
`POWER
`SPLITIER - - - MATCH
`175 ~ 180
`~-+..ob ~oJo
`
`FIG. 16
`
`140
`
`145
`
`260
`
`CONTROLLER
`
`250
`
`POWER
`~R=f::::::=F=t===t=::::=:::::::::::::::::::::::::'.f=Ffl~_....J SPLITTER
`
`155
`
`MATCH
`
`150
`
`140
`
`--
`
`115
`
`FIG. 18
`
`Page 12 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 11 of 55
`
`6,077,384
`
`235
`
`260
`
`CONTROLLER
`
`250
`
`POWER
`~R=t==F===t===========t=Rl~.....J SPLITTER
`
`158
`
`FIG. 17 A
`
`150
`
`140
`
`260
`
`CONTROLLER
`
`250 ............. ___._ __
`
`POWER
`>-..D-----+---t SPLITTER
`
`158
`
`120
`
`125
`
`100
`
`FIG. 17B
`
`155
`
`150
`
`140
`
`Page 13 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 12 of 55
`
`6,077,384
`
`260
`
`CONTROLLER
`
`.fl
`145
`250
`0 0 0 0 0 ; 0 b
`O db O O O ( - - -
`POWER
`"51t1~:::::::t:::::::==::c::::::~~:::::::~~-- SPLITTER
`100
`155
`
`158
`105
`
`150
`
`140
`
`--
`
`135
`
`FIG. 19
`
`170
`
`MATCH
`
`165
`
`260
`
`CONTROLLER
`
`140
`
`--
`
`FIG. 20
`
`Page 14 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 13 of 55
`
`6,077,384
`
`235
`
`--
`
`260 CONTROLLER
`
`100
`
`250
`
`POWER
`SPLITTER
`
`155
`
`150
`
`140
`
`-
`-
`
`--
`
`FIG. 21
`
`260 CONTROLLER
`250
`
`POWER
`SPLITTER
`
`105
`
`--
`
`--
`
`MATCH
`
`135
`
`170
`
`MATCH
`
`235
`
`105
`
`158 115
`
`FIG. 22
`
`140
`
`--
`
`Page 15 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 14 of 55
`
`6,077,384
`
`FROM MATCH e---- PASS f1/
`TRANSDUCER{s) 5
`
`REJECT
`
`f 2
`
`330
`
`280
`
`310
`
`PASS f 1 /
`REJECT
`f 2
`
`320
`
`PASS f 2 /
`REJECT f 1
`
`115
`
`140
`
`PASS f 1 /
`REJECT f 2
`325 --
`
`315
`
`290
`
`PASS f 2 /
`REJECT f 1
`
`1-----1
`
`305
`
`FROM MATCH e
`TRANSDUCER(s) s--- REJECT f 1
`FIG. 23
`
`PASS f 2 /
`
`335
`
`Page 16 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 15 of 55
`
`6,077,384
`
`FROM MATCH e--..... PASS f1 /
`TRANSDUCER(s) 5
`
`REJECT f 2
`
`330
`
`235
`
`PASS f1 /
`REJECT f2
`
`~:::i::=r:====r=======::::::iCDtst-1 58
`
`320
`
`- - - ' ' - - - ' -a
`
`PASS f2 /
`REJECT f 1
`
`105
`~:::;:::;::::;J~~~~~~~,____,.....__ 158
`
`--
`
`115
`
`PASS f 1 /
`REJECT f2
`
`325
`
`315
`
`290
`
`PASS f 2 / --
`REJECT f 1
`FROM MATCH e
`TRANSDUCER(s) 5-----..i REJECT f 1
`
`305
`
`335
`
`PASS f 2 /
`
`FIG. 24
`
`Page 17 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 16 of 55
`
`6,077,384
`
`145
`
`FIG. 25A
`
`400
`
`110
`
`405
`
`FIG. 25B
`
`110
`
`4.35
`
`400
`
`FIG. 25C
`
`Page 18 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 17 of 55
`
`6,077,384
`
`145
`~__,........,.....,.....,.--,---,--.-,......,.....,.....,....._.,_.__--......,......,..._._......._...,.....,.. ____ 520
`
`510
`147
`500
`
`FIG. 26
`
`400
`
`110
`
`147,500
`145
`,-,..-~~.,.....,....-r-r--r-r-r--r-r-?"-r-T+,-,,......,......,--,--,,........,......-r-,___520
`
`510
`
`FIG. 27
`
`400
`
`110
`
`145
`,-,-,,__.,......,-.,....._..,.......,......,.........,.~-,-,-__,........,.+-,-,.--,---,--.-,........,......,........,.._......-.-520
`
`510
`147'
`
`520
`510
`147'
`
`550
`FIG. 28
`
`180
`
`175
`
`180
`
`400
`560
`
`147a
`
`FIG. 29
`
`Page 19 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 18 of 55
`
`6,077,384
`
`110,230
`
`600
`
`FIG. 30A
`
`600
`
`110
`FIG. 30B
`
`600
`
`230
`FIG. 30C
`
`Page 20 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 19 of 55
`
`6,077,384
`
`740a
`
`715a
`
`110,230
`
`31A
`
`740a 715a
`
`110
`
`715c
`
`31B
`
`740b
`
`FIG. 31C
`
`230
`
`Page 21 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 20 of 55
`
`6,077,384
`
`..
`
`Ill
`
`110
`
`1 10 FIG. 32
`
`INNER
`COIL
`
`OUTER
`COIL
`
`820
`
`110
`
`FIG. 33
`
`~
`
`u
`: : : : : : < :a : ;ss : : : ~~ 840b
`V /77777~~ 840c
`110
`FIG. 34
`
`850
`
`840a
`
`Page 22 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 21 of 55
`
`6,077,384
`
`950
`
`960
`
`FIG. 35A
`
`940
`
`FIG. 35B
`
`~900
`
`c:::,
`
`c::, c::, c::,
`
`' - 910
`
`FIG. 35D
`
`975
`
`~970
`
`FIG. 35C
`
`910
`
`900 110
`
`920
`
`FIG. 35E
`
`Page 23 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 22 of 55
`
`6,077,384
`
`985
`960 940
`
`950
`
`986 930 970
`
`110
`
`980
`
`920
`
`910
`
`900
`
`FIG. 36A
`
`985
`
`950
`
`110
`
`FIG. 36B
`
`910
`
`900
`
`Page 24 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 23 of 55
`
`6,077,384
`
`155
`
`150
`
`147
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`FIG. 37B
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`Page 25 of 80
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`
`Page 26 of 80
`
`

`

`U.S. Patent
`US. Patent
`
`Jun.20,2000
`Jun. 20, 2000
`
`Sheet 25 of 55
`Sheet 25 0f 55
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`6,077,384
`6,077,384
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`Page 27 of 80
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`Page 27 of 80
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`
`
`

`

`U.S. Patent
`US. Patent
`
`Jun.20,2000
`Jun. 20, 2000
`
`Sheet 26 of 55
`Sheet 26 0f 55
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`6,077,384
`6,077,384
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`Page 28 0f 80
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`Page 28 of 80
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`
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`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 27 of 55
`
`6,077,384
`
`105
`
`FIG. 40
`
`105
`
`FIG. 41A
`
`Page 29 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 28 of 55
`
`6,077,384
`
`--
`
`105
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`140
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`FIG. 41B
`
`Page 30 of 80
`
`

`

`U.S. Patent
`
`Jun. 20, 2000
`
`Sheet 29 of 55
`
`6,077,384
`
`160'
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`150'
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`160
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`150
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`FIG. 43
`
`Page 31 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 30 of 55
`
`6,077,384
`
`RF
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`FIG. 45
`
`Page 32 of 80
`
`

`

`U.S. Patent
`
`Jun.20,2000
`
`Sheet 31 of 55
`
`6,077,384
`
`158
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`158
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`158
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`158
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`FIG. 47
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`Page 33 of 80
`
`

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`2220
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`Page 34 of 80
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`

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`2220
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`Page 35 of 80
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`

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`3035
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`Page 36 of 80
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`

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`2220
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`Page 37 of 80
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`

`

`2340
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`Page 38 of 80
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`

`

`2340
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`FIG. 51
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`Page 39 of 80
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`

`

`2340
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`Page 40 of 80
`
`

`

`2430
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`Page 41 of 80
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`

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`2340
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`Page 42 of 80
`
`

`

`2220
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`Page 43 of 80
`
`

`

`2220
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`Page 44 of 80
`
`

`

`2220
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`Page 45 of 80
`
`

`

`2220-I GAS
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`FIG. 58
`
`Page 46 of 80
`
`

`

`2220
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`1080
`
`'JJ. =(cid:173)~
`~ ....
`
`,i;;..
`Ul
`0 ....,
`Ul
`Ul
`
`2170
`
`2155
`
`FIG. 59
`
`0--,
`
`.... = .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 47 of 80
`
`

`

`2220
`
`I GAS I
`
`2320
`
`2310
`
`....,..--1030
`
`d •
`r:JJ.
`•
`~
`~ .....
`~ = .....
`
`~ = ?
`N ~=
`8
`C
`
`N
`
`2340
`
`2340a
`
`2225
`
`111 Oa
`
`GAS i= I ======;=~~~
`
`1035 - -
`
`alz J:;;.;\I 7 7 7 I
`
`I GAS
`
`2135 vH
`2150
`1070
`
`2150
`
`Jhl-1070
`
`PUMP
`
`1080
`
`2155
`
`2170
`
`2155
`
`FIG. 60
`
`'JJ. =(cid:173)~
`~ ....
`
`,i;;..
`O'I
`
`0 ....,
`Ul
`Ul
`
`0--,
`
`.... = .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 48 of 80
`
`

`

`2340
`
`2220
`
`I GAS I
`
`2340b
`
`· · · -~
`
`...... l"'I
`
`-
`
`2340a
`2225
`
`2135 N ~
`
`2150
`
`117
`
`~
`
`1070~
`
`2155
`
`2320
`
`...,
`
`2310
`
`1122
`1114
`
`1040
`
`~1030
`
`d •
`r:JJ.
`•
`~
`~ .....
`~ = .....
`
`~ = =
`
`~
`
`N
`C
`N
`C
`C
`C
`
`1010
`
`1035
`
`1065
`1
`
`p)~
`2150
`
`[GAS
`
`'JJ. =(cid:173)~
`~ ....
`
`,i;;..
`-..J
`0 ....,
`Ul
`Ul
`
`1070
`
`PUMP
`
`1080
`
`2155
`
`FIG. 61
`
`0--,
`
`.... = .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 49 of 80
`
`

`

`2340
`
`2340a
`
`111 Oa
`
`2220
`
`I GAS I ~2 430
`2435
`
`2440
`
`2445
`
`2200
`
`\
`
`'<./ A - .£'t'.£U
`
`....----1030
`
`2225
`GAS I
`
`1035
`
`r 7 )vm~z q,2210
`1065
`)
`2135 l7H ~d77777777777~1
`2150
`
`1070
`
`2155
`
`GAS
`
`2150
`
`~1070
`
`PUMP
`
`1080
`
`2170
`
`2155
`
`FIG. 62
`
`d •
`r:JJ.
`•
`~
`~ .....
`~ = .....
`
`~ = = .
`N ~=
`
`N
`C
`C
`C
`
`'JJ. =(cid:173)~
`~ ....
`
`,i;;..
`00
`0 ....,
`Ul
`Ul
`
`0--,
`
`.... = .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 50 of 80
`
`

`

`2340
`
`2340b
`
`2220
`
`I GAS I ~2430
`2435
`
`2440
`
`2445
`
`~1030
`
`2340a
`1020a
`2225
`,7 xif~~.--2210
`GAS I
`2135 ~
`2150 · , ..
`
`1020a
`
`1035
`
`1070
`
`2155
`
`V~//71
`
`I GAS
`
`2150
`
`-fF--71-1070
`
`PUMP
`
`1080
`
`2155
`
`FIG. 63
`
`d •
`r:JJ.
`•
`~
`~ .....
`~ = .....
`
`~ = ?
`N ~=
`8
`C
`
`N
`
`'JJ. =(cid:173)~
`~ ....
`
`,i;;..
`\C
`0 ....,
`Ul
`Ul
`
`0--,
`
`.... = .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 51 of 80
`
`

`

`2220
`
`I
`
`GAS I
`
`2340
`
`...... , . .~ /
`
`1040
`
`2225
`
`GAS I
`
`1020a~1112a
`
`\ R!:!.1:l ) J,- LL I V
`r ;>(;
`'
`
`1035
`
`1065
`l
`
`2135
`2150
`
`1070
`
`2320
`
`.,.,----1030
`
`2310
`
`-2620
`
`2630
`
`GAS
`
`2150
`
`1070
`
`PUMP
`
`1080
`
`FIG. 64
`
`d •
`r:JJ.
`•
`~
`.....
`~
`~ = .....
`
`~ = ?
`
`~
`
`N
`C
`N
`C
`C
`C
`
`'JJ. =-
`~ ....
`
`~
`
`Ul
`C
`0 ....,
`Ul
`Ul
`
`0--,
`....
`
`= .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 52 of 80
`
`

`

`2220
`
`GAS I
`
`2320
`
`~1030
`
`2310
`
`. . . .
`
`1040
`
`2340
`
`...... n ~/,6
`
`I
`· ~1020
`- g
`1020a
`111 2a
`
`I/A
`
`/
`
`-- . -
`
`I
`
`I
`
`I \J I.J
`
`2340a
`2225
`
`GAS I
`
`2135
`2150
`1070
`
`) Rll.~ :;;,,.- L..£ I V
`t J V
`
`?
`
`1035
`- -
`1065
`)
`
`0
`
`2620
`
`2630
`
`GAS
`
`2150
`
`1070
`
`PUMP
`
`1080
`
`FIG. 65
`
`d •
`r:JJ.
`•
`~
`.....
`~
`~ = .....
`
`~ = ?
`N ~=
`
`N
`C
`C
`C
`
`~
`~
`
`'JJ. =-
`....
`Ul
`"'""
`0 ....,
`Ul
`Ul
`
`0--,
`....
`
`= .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 53 of 80
`
`

`

`2340
`
`2340a
`
`2225
`
`GAS I
`
`2220
`
`GAS
`
`2200
`
`1035
`
`F 7 \ : At!:2~/ ,! ,..
`
`,;.._> d<...S...L<I 7
`
`1065
`)
`2135 ~ ~~77777777777~
`2150
`
`1070~
`
`2155
`
`2320
`
`~103 0
`
`1122
`
`2310
`
`2620
`
`2630
`
`;
`
`; I
`
`I GAS
`
`2150
`
`~1010
`
`PUMP
`
`1080
`
`2155
`
`FIG. 66
`
`d •
`r:JJ.
`•
`~
`~ .....
`~ = .....
`
`~ = ?
`N ~=
`8
`C
`
`N
`
`'JJ. =(cid:173)~
`~ ....
`
`Ul
`N
`0 ....,
`Ul
`Ul
`
`0--,
`
`.... = .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 54 of 80
`
`

`

`2340
`
`2340b
`
`2340a
`2225
`
`GAS I
`
`111 Oa,
`
`1020a
`
`' :~ L:,-
`, ,Jc ,
`, ry '
`
`2135 t5jf
`2150
`
`1010~
`
`2220
`
`GAS
`
`2200
`
`1020a
`
`1035
`
`2320
`
`~1030
`
`2310
`
`2620
`
`2630
`
`1h '7tQl..ii.\j 7 7 7 I
`
`I GAS
`
`2150
`
`---1070
`
`PUMP
`
`1080
`
`FIG. 67
`
`d •
`r:JJ.
`•
`~
`~ .....
`~ = .....
`
`~ = ?
`N ~=
`8
`C
`
`N
`
`'JJ. =(cid:173)~
`~ ....
`
`Ul
`~
`0 ....,
`Ul
`Ul
`
`0--,
`
`.... = .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 55 of 80
`
`

`

`U.S. Patent
`US. Patent
`
`Jun.20,2000
`Jun. 20, 2000
`
`Sheet 54 of 55
`Sheet 54 0f 55
`
`6,077,384
`6,077,384
`
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`Page 56 of 80
`
`Page 56 of 80
`
`

`

`2220
`
`GAS
`
`2200
`
`1035
`
`1065
`l
`
`2340
`
`2225
`
`1120a
`
`GAS I --. r7™4J<
`2135 I)'~ ~//i
`. n ,
`n 7 7 T>li"Yt
`2150
`
`1070~
`
`2155
`
`2330
`
`2170
`
`2155
`
`1122
`1114
`1020
`1022
`I
`111 Ob
`
`~1030
`
`GAS
`
`2150
`
`1070
`
`PUMP
`
`1080
`
`FIG. 69
`
`d •
`r:JJ.
`•
`~
`~ .....
`~ = .....
`
`~ = ?
`N ~=
`8
`C
`
`N
`
`'JJ. =(cid:173)~
`~ ....
`
`Ul
`Ul
`0 ....,
`Ul
`Ul
`
`0--,
`
`.... = .....:a
`
`.....:a
`....
`~
`00
`"'-'
`
`Page 57 of 80
`
`

`

`6,077,384
`
`1
`PLASMA REACTOR HAVING AN
`INDUCTIVE ANTENNA COUPLING POWER
`THROUGH A PARALLEL PLATE
`ELECTRODE
`
`This is a continuation-in-part of application Ser. No.
`08/521,668, filed Aug. 31, 1995, now abandoned, which is
`a continuation-in-part of application Ser. No. 08/289,336
`filed Aug. 11, 1994, now abandoned.
`
`BACKGROUND OF THE INVENTION
`
`1. Technical Field
`The invention relates to a plasma reactor having parallel
`plates for interposition therebetween of a workpiece to be
`processed, such as a semiconductor wafer, and an inductive 15
`coil antenna coupling RF power through one of the parallel
`plates into the interior of the reactor.
`2. Background Art
`Inductively coupled plasma reactors for processing
`microelectronic semiconductor wafers, such as the type of
`reactor disclosed in U.S. Pat. No. 4,948,458 to Ogle, enjoy
`important advantages over parallel-plate capacitively
`coupled plasma reactors. For example, inductively coupled
`plasma reactors achieve higher plasma ion densities ( e.g., on 25
`the order of 1011 ions/cm3
`). Moreover, plasma ion density
`and plasma ion energy can be independently controlled in an
`inductively coupled plasma reactor by applying bias power
`to the workpiece or wafer. In contrast, capacitively coupled
`reactors typically provide relatively lower plasma ion den- 30
`sities ( e.g., on the order of only 1010 ions/cm3
`) and generally
`cannot provide independent control of ion density and ion
`energy. The superior ion-to-neutral density ratio provided by
`an inductively coupled plasma etch reactor used to etch
`silicon dioxide, for example, provides superior performance 35
`at small etch geometries ( e.g., below 0.5 micron feature size)
`including better etch anisotropy, etch profile and etch selec(cid:173)
`tivity. In contrast, parallel plate capacitively coupled plasma
`reactors typically stop etching at feature sizes on the order
`of about 0.25 microns, or at least exhibit inferior etch 40
`selectivity and etch profile due to an inferior ion-to-neutral
`density ratio.
`The inductively coupled plasma reactor disclosed in U.S.
`Pat. No. 4,948,458 referred to above has a planar coil
`overlying the chamber ceiling and facing the semiconductor
`wafer being processed, thereby providing an optimally uni(cid:173)
`form RF induction field over the surface of the wafer. For
`this purpose, the ceiling, which seals the reactor chamber so
`that it can be evacuated, must be fairly transmissive to the
`RF induction field from the coil and is therefore a dielectric,
`such as quartz. It should be noted here that such a ceiling
`could be made from dielectric materials other than quartz,
`such as aluminum oxide. However other materials such as
`aluminum oxide tend produce greater contamination than
`quartz due to sputtering.
`An advantage of capacitively coupled plasma reactors is
`that the chamber volume can be greatly reduced by reducing
`the space between the parallel plate electrodes, thereby
`better confining or concentrating the plasma over the
`workpiece, while the reactor can be operated at relatively
`high chamber pressure (e.g., 200 mTorr). In contrast, induc(cid:173)
`tively coupled plasma reactors require a larger volume due
`to the large skin depth of the RF induction field, and must be
`operated at a lower chamber pressure (e.g., 10 mTorr) to
`avoid loss of plasma ions due to recombination and higher
`pumping speed. In commercial embodiments of the induc(cid:173)
`tively coupled reactor of U.S. Pat. No. 4,948,458 referred to
`
`5
`
`2
`above, the requirement of a large chamber volume is met by
`a fairly large area side wall. The lack of any other RF ground
`return (due to the requirement of a dielectric window to
`admit the RF induction field from the overhead coil) means
`that the chamber side wall should be conductive and act as
`the principal ground or RF return plane. However, the side
`wall is a poor ground plane, as it has many discontinuities,
`such as a slit valve for wafer ingress and egress, gas
`distribution ports or apparatus and so forth. Such disconti-
`10 nuities give rise to non-uniform current distribution, which
`distort plasma ion distribution relative to the wafer surface.
`The resulting sideways current flow toward the side wall
`contributes to non-uniform plasma ion distribution relative
`to the wafer surface.
`One approach for combining capacitive and inductive
`coupling is to provide a side coil wound around the side wall
`of a parallel plate plasma reactor, as disclosed in European
`Patent Document Publication No. 0 520 519 Al by Collins
`et al. For this purpose, the cylindrical chamber side wall
`20 must be a nonconductor such as quartz in order to admit the
`RF induction field of the side coil into the chamber. The
`main problem with this type of plasma reactor is that it is
`liable to exhibit processing non-uniformity across the wafer
`surface. For example, the etch rate is much greater at the
`wafer periphery and much slower at the wafer center,
`thereby constricting the process window. In fact, the etch
`process may actually stop near the wafer center while
`continuing at the wafer periphery. The disposition of the
`induction coil antenna along the side wall of the reactor
`chamber, the relatively short (e.g., 2 cm) skin depth (or depth
`within which most of the RF power is absorbed) toward the
`chamber center, and the introduction of the etch precursor
`gas into the reactor chamber from the side, confine most of
`the etchant ion and radical production to the vicinity of the
`chamber side wall or around the wafer periphery. The phrase
`"etchant ion and radical" as employed in this specification
`refers to the various chemical species that perform the etch
`reaction, including fluoro-carbon ions and radicals as well as
`fluoro-hydrocarbon ions and radicals. The population of free
`fluorine ions and radicals is preferably minimized by well(cid:173)
`known techniques if a selective etch process is desired.
`Energetic electrons generated by the plasma source power
`interact with the process precursor gas and thereby produce
`the required etchant ions and radicals and, furthermore,
`45 produce molecular or atomic carbon necessary for polymer(cid:173)
`ization employed in sophisticated etch processes. The etch
`process near the wafer center is dependent upon such
`energetic electrons traveling from the vicinity of the cham(cid:173)
`ber side wall and reaching the wafer center before recom-
`50 bining along the way by collisions with neutral species or
`ions, so that the etch process is not uniform across the wafer
`surface. These problems are better understood in light of the
`role polymerization plays in the etch process.
`Polymerization employing fluoro-carbon (CxFx) or
`55 fluoro-hydrocarbon chemistry is employed in a typical sili(cid:173)
`con dioxide etch process, for example, to enhance etch
`anisotropy or profile and etch selectivity, as described in
`Bariya et al., "A Surface Kinetic Model for Plasma Poly(cid:173)
`merization with Application to Plasma Etching," Journal of
`60 the Electrochemical Society, Volume 137, No. 8 (August
`1990), pp. 2575-2581 at page 1. An etch precursor gas such
`as a fluoro-carbon like C2F 6 or a fluoro-hydrocarbon intro(cid:173)
`duced into the reactor chamber dissociates by inelastic
`collisions with energetic electrons in the plasma into etchant
`65 ions and radicals as well as carbon. As noted above, such
`etchant ions and radicals include fluoro-carbon or fluoro(cid:173)
`hydrocarbon ions and radicals, for example, and free fluo-
`
`Page 58 of 80
`
`

`

`6,077,384
`
`5
`
`3
`rine ions and radicals. The free fluorine ions and radicals are
`preferably minimized through scavenging, for example, if
`the etch