I 1111111111111111 11111 1111111111 111111111111111 IIIII IIIII IIIIII IIII IIII IIII
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`US007358529B2
`
`(IO) Patent No.: US 7,358,529 B2
`
`c12) United States Patent
`(45)Date of Patent:
`
`* Apr. 15, 2008
`
`
`Childs et al.
`
`(54)ACTIVE MATRIX DISPLAY DEVICES, AND
`
`
`THEIR MANUFACTURE
`
`(58)Field of Classification Search .................. 438/59,
`
`
`
`
`
`
`438/72, 34; 257/59, 72, 88, E25.005, E27.133;
`313/34
`
`
`See application file for complete search history.
`
`
`
`
`
`(75)Inventors: Mark Jonathan Childs, Sutton (GB);
`
`
`
`
`
`
`David Andrew Fish, Haywards Heath
`(56)
`
`
`(GB); Jason Roderick Hector, Redhill
`(GB); Nigel David Young, Redhill
`(GB)
`
`6,781,152 B2 * 8/2004 Yamazaki .................... 257/59
`
`
`
`
`
`2005/0122288 Al* 6/2005 Fish et al. .................... 345/76
`(73)Assignee: Koninklijke Philips Electronics N.V.,
`
`
`
`
`
`2005/0127376 Al* 6/2005 Young et al. ................. 257/80
`
`Eindhoven (NL)
`
`
`
`References Cited
`
`U.S. PATENT DOCUMENTS
`
`( *) Notice: Subject to any disclaimer, the term of this
`
`
`
`
`
`
`patent is extended or adjusted under 35
`
`U.S.C. 154(b) by 226 days.
`
`
`
`This patent is subject to a terminal dis­
`
`EP
`claimer.
`
`(Continued)
`
`FOREIGN PATENT DOCUMENTS
`
`0895219 Al 2/1999
`
`(21)Appl. No.:10/507,770
`
`
`
`(22) PCT Filed:Feb. 21, 2003
`
`
`
`(86) PCT No.: PCT /IB03/00699
`
`§371 (c)(l),
`(2), ( 4) Date:Sep. 15, 2004
`
`(Continued)
`
`Primary Examiner----Quoc Hoang
`
`
`
`
`
`(74)Attorney, Agent, or Firm-Paul Im
`
`(57)
`
`ABSTRACT
`
`
`
`(87)PCT Pub. No.: WO03/079441
`
`
`
`PCT Pub. Date: Sep. 25, 2003
`
`(65)
`
`
`
`Prior Publication Data
`
`
`
`
`
`US 2005/0255616 Al Nov. 17, 2005
`
`
`
`Physical barriers (210) are present between neighboring
`
`
`
`
`
`
`
`pixels (200) on a circuit substrate (100) of an active-matrix
`
`
`
`display device, such as an electroluminescent display
`
`formed with LEDs (25) of organic semiconductor materials.
`
`
`
`The invention forms at least parts of the barriers (210) with
`
`
`
`metal or other electrically-conductive material (240) that is
`
`
`
`insulated ( 40) from the LEDs but connected to the circuitry
`
`
`
`(4, 5, 6, 9, 140, 150, 160, Tl, T2, Tm, Tg, Ch etc.) within
`
`
`
`
`the substrate (100). This conductive barrier material (240)
`
`
`
`
`may back up or replace, for example, matrix addressing lines
`0206551.4
`
`
`
`(150) and/or form an additional component either within the
`0209560.2
`
`
`
`pixel array or outside. The additional component comprising
`0216057.0
`
`
`
`the conductive barrier material (240) is advantageously a
`
`
`capacitor (Ch), or an inductor (L) or transformer (W), or
`even an aerial.
`
`
`
`
`
`(30) Foreign Application Priority Data
`
`
`
`Mar. 20, 2002 (GB)
`
`Apr. 26, 2002 (GB)
`
`Jul. 11, 2002 (GB)
`
`(51)Int. Cl.
`HOJL 29104 (2006.01)
`
`
`
`
`(52)U.S. Cl. ................... 257/59; 257/72; 257/E25.005;
`257/E27.133
`
`
`
`
`13 Claims, 11 Drawing Sheets
`
`210
`
`,...----/'-----
`240 40
`
`210
`
`,...----/'-----
`240 40
`
`23}
`
`22
`25 (LED)
`
`21
`
`8
`2
`11---.==-+--1------1c-+-
`
`- - ----H- - --+---+- -----1f-+--H-l-----l-l----<
`
`100
`
`250
`
`250
`
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`US 7,358,529 B2
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`Page 2
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`U.S. PATENT DOCUMENTS
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`EP
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`1102317 A2
`5/2001
`
`GB
`
`2347017 A
`8/2000
`2005/0146279 Al* 7/2005 Hector et al. ............ 315/169.3
`WO
`WO 9943031
`8/1999
`
`
`
`FOREIGN PATENT DOCUMENTS
`
`EP
`
`
`
`1096568 A2 5/2001
`
`
`
`* cited by examiner
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`U.S. Patent Apr. 15, 2008
`
`
`US 7,358,529 B2
`Sheet 1 of 11
`
`160
`
`160
`
`150
`
`--.----11------t----.----------t--i�--..--.----Vdd
`
`140 T2 5
`
`T2
`
`=-Ch
`
`T1
`
`4 3
`25 (LED)
`
`5
`
`3
`25 (LED)
`
`230--
`
`-=-
`
`150
`
`Vdd----------------
`
`----
`
`T2
`
`=-Ch
`
`T2
`
`140
`4
`
`4
`
`5
`25 (LED)
`
`3
`
`4
`
`3
`3
`25 (LED)
`
`230--- .
`
`FIG. 1
`
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`Sheet 2 of 11
`
`i
`
`
`
`12a
`
`•
`
`•
`
`U.S. Patent
`
`Apr. 15, 2008
`
`200
`
`mu
`
`.7/44745_....m....................................
`
`m.ll.._..IJH7/47
`
`._8“E83:.\§5LL:_Aime.8._>3_as.llmulll-I....:_..§&m§ll.lg.N_
`
`
`200
`
`
`
`240 40
`
`�
`
`210
`
`__‘ammF
`
`
`
`210
`
`
`__=_aN183“4___————a—_—___‘N
`_..H.......H.....H..H.....,.........H....H..........u.....,====§§
`
`
`240 40
`
`�
`
`ENEN
`
`cow
`
`owovmowovm
`
`100
`
`US 7,358,529 B2
`
`8
`
`FIG. 2
`
`250
`
`Tm
`
`250
`
`m.oE
`
`Tm
`
`1
`
`150 y
`
`11
`
`
`
`2
`8
`
`
`
`z
`
`I.w
`
`23 (230) 22 i
`
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`

`100
`
`US 7,358,529 B2
`
`21
`
`25 (LED)
`
`22
`
`Sheet 3 of 11
`
`U.S. Patent
`
`Apr. 15, 2008
`
`i 23}
`
`200
`
`FIG. 3
`
`Tg
`
`V
`
`, 4 5 1 2 3/
`
`m.05
`
`12
`
`z 1 y 5
`
`.B.“mini2Hm:~_
`
`11
`2
`8
`
`
`\_
`
`8
`
`
`
`a_:.a:mw......HW....H....
`
`
`ANN.1fl—“ff
`
`Dear:III-I'll.-.:
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`\\\\§&\\\§§\\_\\«
`
`240 40
`�
`
`210
`
`!
`
`200
`
`30)
`
`£4;
`
`
`50)
`
`40
`
`z
`
`Tina
`...:...\_.\.2
`
`8%m
`
`am:0%
`
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`U.S. Patent Apr. 15, 2008
`
`Sheet 4 of 11 US 7,358,529 B2
`
`160
`
`160
`
`
`___________ l ___ _
`
`210 (240,150}
`
`150,5
`
`150,5
`
`Vdd
`
`5
`T2
`
`=-Ch
`
`T2
`
`140
`
`4
`
`T1
`
`LED
`
`4 3
`
`3
`
`LED25
`
`-+----+---.---------+---+--.,...__..,.._
`
`T2
`
`=-Ch
`
`4
`
`T2
`
`210 (240, 150)
`
`
`___________ ,L ___ _
`
`150,5
`__ ,__ Vdd
`
`140
`
`T1
`
`T1
`
`LED
`
`LED25
`
`230--- -
`
`230-- -
`
`FIG. 4
`
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`U.S. Patent Apr. 15, 2008
`
`Sheet 5 of 11 US 7,358,529 B2
`
`{240
`
`210
`40
`
`240x}
`
`210x
`40x
`
`12--
`I
`5,4�
`
`12b
`
`·.
`
`12x
`
`�4,5
`
`·-·-·-·-·-·_J
`L ___________
`FIG. 5
`
`12
`
`160
`
`160
`
`12x
`
`12x
`
`
`
`
`
`
`
`
`
`210x (240,40x)
`:140
`
`
`
`
`
`
`
`
`r·····--··-··-······· ·-·-·········-··--····· -··············· ····· ······· ·-· ····-·······························--····' ······
`
`150
`
`
`
`: ............................................................................................................................................................................................................................................. .
`
`..........................................
`:
`:
`
`2b
`210 (240,40)
`
`---
`
`140
`
`■
`! .................................................................................................................................................................................................................................
`
`
`
`
`
`i
`
`
`
`
`
`i
`
`l---21ox
`
`:
`
`:
`
`10
`
`FIG. 6
`
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`U.S. Patent Apr. 15, 2008 Sheet 6 of 11
`
`
`
`
`
`US 7,358,529 B2
`
`
`
`21 Ox (240x, 40x)
`
`200
`
`210
`(240, 40)
`
`210
`
`210x
`
`200
`
`210
`
`(240, 40)
`
`200
`
`200
`
`200
`
`210
`
`210
`
`200
`
`200
`
`200
`
`LED25
`
`240
`
`FIG. 7
`
`LED25
`
`23b
`22
`21
`
`22
`
`100
`
`L ______ _ ·-----·
`
`---------------
`
`12
`
`4,5
`
`21
`
`FIG. 8
`
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`U.S. Patent Apr. 15, 2008
`Sheet 7 of 11
`
`US 7,358,529 B2
`
`210c
`
`!
`
`40c
`
`40
`
`240c
`
`240
`12c
`
`12b ··
`
`·:
`
`·:
`-:
`·."·
`
`4,5
`
`5,4
`
`FIG. 9
`
`210
`210
`(240, 40)
`
`(240, 40)
`210c
`
`ctJ
`
`200
`
`210c
`40c)
`(240c,
`
`FIG. 10
`
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`Apr. 15, 2008
`Sheet 8 of 11
`U.S. Patent
`
`US 7,358,529 B2
`
`210d
`
`240
`
`240d
`
`12b
`
`12
`
`12b
`
`FIG. 11
`
`210d (L)
`9
`
`240d
`
`FIG. 12
`
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`U.S. Patent Apr. 15, 2008
`Sheet 9 of 11
`
`US 7,358,529 B2
`
`9s
`
`9p 9s
`
`::·-
`·:•;•��
`12b � . ? ·� · ��--��
`
`240s-.����
`
`240p-��
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`��-240s
`� - 240p
`
`12b-
`
`···-···· ..... , ............ .
`
`\ .... •.
`.�::■
`?
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`:{:·::-::\{:·
`.
`. · ... ·.·. · ..
`. .. .. ... ..
`----1 .. · .:. · ..... ·. ·:
`.. ....
`..... .\{%
`:-: ... :.-. ·::: ·:-.: ·:-:
`·:. :-.:-::.
`. ·:-.: ·:-:. ·:-: .
`
`·:-:. ·::. ·:-:.
`... It • •
`.........
`.·.· .·
`.·.· .·.· .............. •.•,•
`.·.·
`P--.._ .·.· .. · .. •.·.·
`.·.·-·.· .·.· .·.·
`.·.·
`.· .·.·
`9s
`
`...........................
`......................
`....... '•
`...............................
`.. ... .. .. .. .. .. ... .. • . ·•.·•.··
`
`_ .. _. ... _ .. _ .. ·.:.::-:.
`........
`-:-::•:-,:.··.·• ....
`
`
`
`• •
`
`• •
`
`•
`
`•
`
`• •
`
`• •
`
`• •
`
`• •
`
`• •
`
`• •
`
`• •
`
`..
`
`....
`
`.
`
`9
`
`FIG. 13
`
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`U.S. Patent Apr. 15, 2008
`Sheet 10 of 11
`
`US 7,358,529 B2
`
`12b 4 12 12a
`
`12 12b 4 5 12a
`
`I
`10-+-
`L ____
`
`Tm
`
`I
`I
`___ _J
`8
`
`150
`
`100
`
`FIG. 14
`
`240
`
`240
`
`12b �-.Jj
`
`4
`
`150-i:===rz;:J...__j ��� '-----+-----'+"'-+-'
`
`__ ..,,..,.., '-------i
`
`100
`
`I
`10-+
`
`I
`Tm
`I
`_J
`·-·-·-·-·-·
`L _____ _
`1 5 11 2 8 150 4 1 5
`
`Tm
`
`FIG. 15
`
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`Sheet 11 of 11
`U.S. Patent Apr. 15, 2008
`
`US 7,358,529 B2
`
`240b 40
`
`240b 40
`
`150
`
`11
`
`100
`
`Tm
`
`Tm
`
`I
`·-·-·-·-·-·_J
`8 150 140,4 1 5
`140,4 1 5
`2
`
`L_ __ _
`
`FIG. 16
`
`44
`
`240
`40
`
`40
`
`-+-12
`I
`
`1'°·_J
`L _____ ·-·-·-·
`12b 8
`
`FIG. 17
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`US 7,358,529 B2
`
`1
`ACTIVE MATRIX DISPLAY DEVICES, AND
`
`THEIR MANUFACTURE
`
`2
`According to one aspect of the present invention, there is
`
`
`
`
`
`
`
`
`
`provided an active-matrix display device (for example an
`
`
`AMELD or an AMLCD) having the features set out in Claim
`1.
`
`
`
`This invention relates to active-matrix display devices,
`In accordance with the invention, the physical barriers
`
`
`
`5
`
`
`
`particularly but not exclusively electroluminescent displays
`
`
`
`
`between pixels are used to provide connections into and/or
`
`using light-emitting diodes of semiconducting conjugated
`
`
`
`out of the circuit substrate, and may provide additional
`
`polymer or other organic semiconductor materials. The
`
`
`
`components of the device.
`
`invention also relates to methods of manufacturing such
`
`
`
`Thus, these pixel barriers are partly (possibly even pre-
`
`
`
`devices.
`
`10 dominantly) of electrically-conductive material, typically
`
`
`
`Such active-matrix electroluminescent display devices are
`
`
`
`
`
`
`metal. This conductive barrier material is connected with a
`known, comprising an array of pixels present on a circuit
`
`
`
`
`
`
`
`
`circuit element within the circuit substrate, while also being
`
`
`
`substrate, wherein each pixel comprises an electrolumines­
`
`
`
`
`insulated at least at the sides of the barriers adjacent to the
`
`
`
`cent element, typically of organic semiconductor material.
`
`
`
`
`pixel display elements. The said circuit element in the circuit
`
`
`
`The electroluminescent elements are connected to circuitry
`
`
`
`
`substrate may take a variety of forms, depending on the
`15
`
`
`
`in the substrate, for example drive circuitry that includes
`
`
`
`
`particular improvement or enhancement or adaptation being
`
`
`
`supply lines and matrix addressing circuitry that includes
`
`
`
`
`made. Typically, it may be one or more thin-film elements of
`
`
`
`lines. These lines are addressing (row) and sign al (column)
`
`
`
`
`the group comprising: a conductor layer; an electrode con­
`
`
`
`
`generally formed by thin-film conductor layers in the sub­
`
`
`
`nection; a supply line; an addressing line; a signal line; a
`
`
`
`
`strate. The circuit substrate also includes addressing and 20
`
`
`
`thin-film transistor; a thin-film capacitor.
`
`
`
`drive elements (typically thin-film transistors, hereafter
`
`
`
`Much versatility is possible in accordance with the inven­
`
`termed "TFT"s) for each pixel.
`
`
`
`tion. Various structural features can be adopted for the pixel
`
`
`
`
`barriers. Thus, the conductive barrier material may extend
`
`In many such arrays, physical barriers of insulating mate­
`
`
`as, for example, a line across the array, or it may be localised
`rial are present between neighbouring pixels in at least one
`
`
`
`
`
`
`
`25 to, for example, individual pixels or groups of pixels or to
`direction of the array. Examples of such barriers are given in
`
`
`
`
`
`other device areas.
`
`
`
`published United Kingdom patent application GB-A-2 347
`017, published PCT patent application WO-Al-99/43031, Where the conductive barrier material is used to form an
`
`
`
`
`
`
`
`
`
`
`published European patent applications EP-A-0 895 219, additional component, that component may be formed inside
`
`
`
`
`
`EP-A-1 096 568, and EP-A-1 102 317, the whole contents or outside the pixel array. As compared with connecting an
`
`of which are hereby incorporated herein as reference mate-30
`
`
`
`
`
`
`external component, the integration of this additional com­
`rial.
`
`
`ponent with pixel barrier technology can be used to enhance
`
`
`
`device performance at reduced cost and in compact areas
`
`
`
`Such barriers are sometimes termed "walls", "partitions",
`
`
`within the display device.
`
`
`
`
`
`"banks", "ribs", "separators", or "dams", for example. As
`At least some lengths of the conductive barrier material
`
`
`can be seen from the cited references, they may serve several
`
`35
`
`
`
`may simply serve as a back-up or even as a replacement for
`
`
`functions. They may be used in manufacture to define
`
`
`at least part of a thin-film conductor line of the circuit
`
`
`electroluminescent layers and/or electrode layers of the
`
`
`
`
`substrate, for example an address (row) line, a sign al (col­
`
`
`
`
`individual pixels and/or of colunms of pixels. Thus, for
`
`unm) line or a supply line. Thus, the conductive barrier
`
`
`
`
`example, the barriers prevent pixel overflow of conjugate
`
`material may provide ( or at least back up) the addressing
`
`
`
`
`
`polymer materials that may be ink-jet printed for red, green
`40
`
`
`
`lines (row conductors) over most of their length to reduce
`
`
`
`and blue pixels of a colour display or spin-coated for a
`
`
`
`voltage drops along the addressing lines. In a case such as
`
`
`monochrome display. The barriers in the manufactured
`
`
`
`
`this, the barriers may be predominantly of conductive mate­
`
`
`
`
`device can provide a well-defined optical separation of
`
`
`
`rial (typically metal), or they may be predominantly of
`
`
`
`
`pixels. They may also carry or comprise conductive material
`
`
`insulating material with a conductive coating.
`
`( such as upper electrode material of the electroluminescent
`45
`
`
`Barrier structures used in accordance with the invention
`
`
`
`
`
`element), as auxiliary wiring for reducing the resistance of
`
`
`may be constructed with a metal core. This metal core can
`
`
`(and hence the voltage drops across) the common upper
`be used in various ways.
`
`
`electrode of the electroluminescent elements.
`The metal core may itself provide the conductive barrier
`
`
`
`
`
`
`Active-matrix liquid-crystal displays (AMLCDs) simi­
`
`
`
`
`element in the 50 material that is connected with the circuit
`
`
`larly comprise a circuit substrate on which an array of pixels
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`substrate. It may have an insulating coating on at least its
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`is present. In the AMLCD case, upstanding spacers (pillars,
`sides.
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`for example) are present on the circuit substrate between at
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`least some of the neighbouring pixels. These spacers support
`A metal coating can be provided on an insulating coating
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`the overlying opposite plate of the display over the active­
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`on the metal core. This metal coating may be connected to
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`matrix circuit substrate to define the cell spacing in which 55
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`another circuit element. In one particularly useful form, the
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`the liquid crystal material is accommodated. For the purpose
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`metal core, insulating coating and metal coating may
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`of the present invention when applied to AMLCDs, the
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`together form a capacitor, for example an individual holding
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`spacers/pillars between pixels of an AMLCD will be com­
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`capacitor for each respective pixel. Thus, the pixel barriers
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`pared with the barriers between pixels of an active-matrix
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`may comprise separately insulated lengths, one or more of
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`electroluminescent display (AMELD) and will be termed 60
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`which may provide a capacitor having this metal-insulator
`"barriers".
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`coated barrier structure.
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`It is an aim of the present invention to exploit, develop,
`However, the metal core does not need to be connected to
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`adapt and/or extend particular features of active-matrix
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`a circuit element in the substrate. Thus, for example, when
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`display devices, so as to permit improvement and/or
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`the barrier comprises a metal coating on an insulating
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`enhancement of the performance and/or capabilities of the
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`coating on a metal core of the barrier, the metal coating may
`65
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`device in a manner that is compatible with the basic device
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`provide the conductive barrier material that is connected
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`structure, its layout and its electronics.
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`with the circuit element in the substrate. The metal core may
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`3
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`4
`be, for example, a ferromagnetic core of an inductor or FIG. 11 is a cross-sectional view of a conductive barrier
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`transformer that is integrated in this manner into the display construction in an inductor embodiment in accordance with
`device.
`the invention;
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`Thus, the barriers may comprise separately insulated
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`FIG. 12 is a plan view oflayout features suitable for such
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`portions, one or more of which provide a capacitor, an 5
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`an inductor embodiment;
`inductor or a transformer having these coated barrier struc­
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`FIG. 13 is a plan view of layout features suitable for a
`tures. This separate capacitor or inductor or transformer
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`transformer embodiment, having a cross-section similar to
`length may be located within the pixel array, or it may be
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`that of FIG. 12;
`located outside the pixel array but still formed on the circuit
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`FIGS. 14 to 16 are sectional views of a device part such
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`substrate in the same process steps as the pixel barriers.
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`10 as that of FIG. 2 or FIG. 3 at stages in its manufacture with
`
`Other separately insulated conductive portions of the
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`one particular embodiment in accordance with the invention;
`barriers may serve different functions. They may be used, for
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`and
`example, to back-up or to replace conductor lines of the
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`FIG. 17 is a sectional view a device part at the FIG. 16
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`circuit substrate and/or to form interconnections.
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`stage, illustrating a modification in the insulation of the
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`Instead of using a metal core, a metal coating of the
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`15 conductive barrier material that is also in accordance with
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`barrier may be used to provide the conductive barrier
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`the present invention.
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`material that is connected with the circuit element in the
`It should be noted that all the Figures are diagrammatic.
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`substrate.
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`Relative dimensions and proportions of parts of these Fig­
`According to another aspect of the present invention,
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`ures have been shown exaggerated or reduced in size, for the
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`there are also provided advantageous methods of manufac­
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`20 sake of clarity and convenience in the drawings. The same
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`turing such an active-matrix display device.
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`used to refer to corresponding reference sign s are generally
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`Various advantageous features and feature-combinations
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`or similar features in modified and different embodiments.
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`in accordance with the present invention are set out in the
`Embodiments of FIGS. 1 to 3
`
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`appended Claims. These and others are illustrated in
`The active-matrix electroluminescent display (AMELD)
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`embodiments of the invention that are now described, by 25
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`device of each of the FIGS. 1 to 3 embodiments comprises
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`way of example, with reference to the accompanying dia­
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`an array of pixels 200 on a circuit substrate 100 with matrix
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`grammatic drawings, in which:
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`addressing circuitry. Physical barriers 210 are present
`
`
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`FIG. 1 is a circuit diagram for four pixel areas of an
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`between at least some of the neighbouring pixels in at least
`active-matrix electroluminescent display device which can
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`one direction of the array. At least some of these barriers 210
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`be provided with conductive barrier material in accordance
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`30
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`are constructed with conductive barrier material 240 that is
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`with the invention;
`
`
`used as an interconnection in accordance with the present
`FIG. 2 is a cross-sectional view of part of the pixel array
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`
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`invention. Apart from this special construction and use of the
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`and circuit substrate of one embodiment of such a device,
`
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`barriers 210 in accordance with the present invention, the
`
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`
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`showing one example of a conductive barrier construction
`
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`display may be constructed using known device technolo­
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`
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`connected to a TFT source or drain line in accordance with 35
`
`
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`gies and circuit technologies, for example as in the back-
`the invention;
`
`ground references cited hereinbefore.
`FIG. 3 is a cross-sectional view of part of the pixel array
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`
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`The matrix addressing circuitry comprises transverse sets
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`
`and circuit substrate of a similar embodiment of such a
`
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`of addressing (row) and signal (column) lines 150 and 160,
`
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`
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`device, showing another example of a conductive barrier
`
`
`in FIG. 1. An addressing element
`40 respectively, as illustrated
`
`
`
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`construction connected to a TFT gate line in accordance with
`
`
`
`
`T2 (typically a thin-film transistor, hereafter termed "TFT")
`the invention;
`
`is incorporated at each interception of these lines 150 and
`
`
`
`
`FIG. 4 is a circuit diagram, similar to that of FIG. 1, but
`
`
`160.FIG. 1 depicts, by way of example, one specific pixel
`
`
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`showing the use of pixel barriers with conductive barrier
`
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`
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`circuit configuration. Other pixel circuit configurations are
`
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`material to replace most of the addressing lines;
`
`45 known for active matrix display devices, and it should
`
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`FIG. 5 is a cross-sectional view through side-by-side
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`
`
`readily be understood that the present invention may be
`
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`
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`barriers, each with conductive barrier material for a particu­
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`applied to the pixel barriers of such a device regardless of
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`lar embodiment of a device in accordance with the inven­
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`
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`the specific pixel circuit configuration of the device.
`tion,
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`Each pixel 200 comprises a current-driven electrolumi-
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`FIG. 6 is a plan view of four pixel areas showing a specific
`
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`
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`50 nescent display element 25 (21,22,23), typically a light­
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`
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`example of layout features for a particular embodiment of a
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`emitting diode (LED) of organic semiconductor material.
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`
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`device in accordance with the invention, with side-by-side
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`
`
`The LED 25 is connected in series with a drive element Tl
`
`
`
`conductive barriers, for example, with the cross-sectional
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`
`(typically a TFT) between two voltage supply lines 140 and
`
`
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`view of FIG. 5 taken on the line V-V of FIG. 6;
`
`
`
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`230 of the array. These two supply lines are typically a
`
`
`FIG. 7 is a plan view of another example of layout
`
`
`55 power supply line 140 (with voltage V dd) and a ground line
`
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`
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`features for a particular embodiment of a device in accor­
`
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`230 (also termed "return line"). Light emission from the
`
`
`dance with the invention, with transverse conductive barri­
`
`
`
`LED 25 is controlled by the current flow through the LED
`ers;
`
`
`25, as altered by its respective drive TFT Tl.
`
`
`FIG. 8 is a sectional view of a device part with yet another
`
`
`
`example of a conductive barrier construction using a metal
`
`
`Each row of pixels is addressed in turn in a frame period
`
`
`coating in accordance with the invention;
`
`
`
`
`60 by means of a selection signal that is applied to the relevant
`
`
`FIG. 9 is a cross-sectional view of a conductive barrier
`
`
`row conductor 150 (and hence to the gate of the addressing
`
`TFTs T2 of the pixels
`
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`
`
`construction that additionally includes a metal coating to
`of that row). This sign al turns on the
`
`
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`addressing TFT T2, so loading the pixels of that row with
`
`
`
`
`form a capacitor embodiment in accordance with the inven­
`
`
`respective data signals from the column conductors 160.
`tion;
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`
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`FIG. 10 is a plan view of transverse barrier layout features
`
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`65 These data sign als are applied to the gate of the individual
`
`drive TFT Tl of the respective pixel. In order to hold the
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`
`
`
`suitable for a device having such a capacitor embodiment in
`
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`resulting conductive state of the drive TFT Tl, this data
`
`accordance with the invention;
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`Apple EX1006 Page 15
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`US 7,358,529 B2
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`5
`6
`signal is maintained on its gate 5 by a holding capacitor Ch
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`to form opaque barriers 210 for a well-defined optical
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`that is coupled between this gate 5 and the drive line
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`separation of the pixels 200 in the array, when light 250
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`140,240. Thus, the drive current through the LED 25 of each
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`is emitted through the top (instead of, or as well as, the
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`pixel 200 is controlled by the driving TFT Tl based on a
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`bottom substrate 100).
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`and 5 address period drive sign al applied during the preceding
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`Whatever their specific use in these known ways, at least
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`stored as a voltage on the associated capacitor Ch. In the
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`some insulated lengths of the physical barriers 210 in
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`
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`specific example of FIG. 1, Tl is shown as a P-channel TFT,
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`
`
`embodiments of the present invention are constructed and
`
`
`whereas T2 is shown as an N-channel TFT.
`
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`
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`used in a special manner. Thus, the pixel barriers 210 of
`
`
`This circuitry can be constructed with known thin-film
`
`FIGS. 2 to 4 comprise metal 240 (or other electrically-
`technology. The substrate 100 may have an insulating glass
`
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`10 conductive material 240) that is insulated at their sides
`
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`base 10 on which an insulating surface-buffer layer 11, for
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`adjacent the LEDs 25 and that are connected to and/or from
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`
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`example, of silicon dioxide is deposited. The thin-film
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`one or more circuit elements of the circuit substrate 100.
`
`
`circuitry is built up on the layer 11 in known manner
`
`
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`This circuit element may take a variety of forms, depending
`
`FIGS. 2 and 3 show TFT examples Tm and Tg, each
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`
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`on the particular improvement or enhancement or adaptation
`
`comprising: an active semiconductor layer 1 (typically of
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`15 being made. Typically, it may be one or more thin-film
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`polysilicon); a gate dielectric layer 2 (typically of silicon
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`elements of the group comprising: a conductor layer and/or
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`
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`dioxide); a gate electrode 5 (typically of aluminium or
`
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`an electrode connection 4, 5, 6; a supply line 140; an
`
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`polysilicon); and metal electrodes 3 and 4 (typically of
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`addressing line 150; a sign al line 160; a thin-film transistor
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`aluminium) which contact doped source and drain regions of
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`Tl, T2, Tm, Tg; a thin-film capacitor Ch.
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`the semiconductor layer 1 through windows (vias) in the
`In the embodiment of FIG. 2, the circuit element con-
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`20
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`over-lying insulating layer(s) 2 and 8. Extensions of the
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`nected to the conductive barrier material 240 is an extension
`
`
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`electrodes 3, 4 and 5 may form, for example, interconnec­
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`
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`of the source and/or drain electrode ofTFT Tm. It may form
`
`
`tions between the elements Tl, T2, Ch and LED 25, and/or
`
`
`a signal (colunm) line 160, for example, of the substrate
`
`
`at least part of the conductor lines 140, 150 and 160,
`
`circuitry when Tm is T2, or a drive line 140 when Tm is Tl.
`depending on the circuit function provided by the particular
`
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`25 In the embodiment of FIG. 3, the circuit element connected
`
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`TFT (for example, the drive element Tl or the addressing
`
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`
`
`to the conductive barrier material 240 is an extension of the
`
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`
`
`element T2 or another TFT of the circuit substrate). The
`
`
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`gate electrode 5 ofTFT Tg. It may form an addressing (row)
`
`
`
`holding capacitor Ch may be formed similarly, in known
`
`
`
`line 150, for example, of the substrate circuitry when Tg is
`
`
`
`manner, as a thin-film structure inside the circuit substrate
`T2.
`100.
`30 The pixel barriers 210 in the embodiments of FIGS. 2 to
`
`
`
`
`
`The LED 25 typically comprises a light-emitting organic
`
`
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`4 are predominantly of electrically-conductive material 240,
`
`
`
`
`semiconductor material 22 between a lower electrode 21 and
`
`240x, preferably metal for very low resistivity (for example
`
`
`an upper electrode 23. In a preferred particular embodiment,
`
`
`
`
`
`aluminium or copper or nickel or silver). The barriers 210 of
`
`semiconducting conjugated polymers may be used for the
`
`
`
`
`FIGS. 2 and 3 comprise a bulk or core of the conductive
`electroluminescent material 22. F or a LED that emits its
`
`
`
`
`
`
`35 material that has an insulating coating 40 on its sides and on
`
`
`
`light 250 through the substrate 100, the lower electrode 21
`its top.
`
`may be an anode of indium tin oxide (ITO), and the upper
`As shown in FIGS. 2 and 3, the bottom connections of the
`
`
`
`
`
`
`electrode 23 may be a cathode comprising, for example,
`
`
`
`
`
`conductive barrier material 240 to the circuit element 4,5
`
`
`
`calcium and aluminium. FIGS. 2 and 3 illustrate a LED
`
`
`
`occur at connection windows 12b in the intermediate insu-
`
`
`
`construction in which the lower electrode 21 is formed as a
`
`
`
`
`4o lating layer 12. However, it should be understood that these
`
`
`
`thin film in the circuit substrate 100. The subsequently­
`
`
`
`windows 12b may often not be in the same plane as the TFT
`
`
`
`
`
`deposited organic semiconductor material 22 contacts this
`
`
`
`
`Tm, Tg. In particular, there is generally insufficient space
`
`
`
`thin-film electrode layer 21 at a window 12a in a planar
`
`
`
`between the source and drain electrodes 3 and 4 of TFT Tg
`
`
`
`
`insulating layer 12 (for example of silicon nitride) that
`
`
`
`to accommodate a window 12b. Thus, the window 12b is
`
`
`
`
`extends over the thin-film structure of the substrate 100.
`
`
`
`45 depicted in broken outline in FIG. 3 to indicate its location
`
`
`As in known devices, the devices of FIGS. 1 to 4 in
`
`
`
`outside the plane of the drawing paper.
`accordance with the present invention include physical
`
`
`
`Addressing Line Barrier Embodiment of FIG. 4
`
`
`
`
`
`
`barriers 210, between at least some of the neighbouring
`
`
`The conductive barrier material 240 connected to a TFT
`
`
`
`pixels in at least one direction of the array. These barriers
`
`
`
`gate line (as in FIG. 3, for example) may provide at least part
`
`
`
`210 may also be termed "walls", "partitions", "banks",
`50
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`
`
`
`of the addressing (row) lines 150. One such embodiment is
`
`
`
`
`
`"ribs", "separators", or "dams", for example. Depending on
`
`
`
`illustrated in FIG. 4, wherein most of the line 150 is formed
`
`
`
`
`the particular device embodiment and its manufacture, they
`
`
`
`by the conductive barrier material 240.
`may be used in known manner, for example:
`
`
`to separate and prevent overflow of a polymer solution
`
`
`
`reduced by using the Line resistance can be sign ificantly
`
`
`
`between the respective areas of the individual pixels
`
`
`
`
`conductive barrier material 240 to replace or to back up the
`55
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`
`
`
`200 and/or colunms of pixels 200, during the provision
`
`
`
`conductor line 150 of the circuit substrate 10. Thus, along
`
`
`
`of semiconducting polymer layers 22;
`
`
`
`
`the line 240(150), the conductive barrier material 240 has a
`
`
`
`
`to provide a self-patterning ability on the substrate surface
`
`
`cross-sectional area that is at least twice (possibly even an
`
`
`
`
`
`in the definition of the semiconducting polymer or
`
`
`
`
`order of magnitude) larger than that of the conductor layer
`
`
`
`other electroluminescent layers 22 for the individual
`
`
`
`that typically provides a gate line 5(150) of TFT Tg in the
`60
`
`
`
`pixels 200 and/or for columns of pixels 200 (and
`
`
`
`circuit substrate 100. Typically, the conductive barrier mate­
`
`
`
`possibly even a self-separation of individual electrodes
`
`
`
`rial 240 may have a thickness Z that is a factor of two or
`
`
`
`
`for the pixels, for example an individual bottom layer
`
`
`more (for example at least five times) larger than the
`
`
`of the upper electrodes 23);
`
`
`thickness z of this conductor layer 5(150) in the circuit
`
`
`
`to act as a spacer for a mask over the substrate surface
`
`
`
`
`
`substrate 100. In a specific example Z may be between 2 µm
`65
`
`
`
`during the deposition of at least an organic semicon­
`
`
`and 5 µm as compared with 0.5 µm or less for z. Typically,
`
`
`
`ductor material 22 and/or electrode material;
`
`
`
`the conductive barrier material 240 may have a line width Y
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`US 7,358,529 B2
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`8
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`7
`that is the same width ( or even at least twice as large) as the
`
`
`material. This metal core 240 is connected with the circuit
`
`
`
`line width y of the conductor layer 140. In a specific example
`
`
`
`element 4 or 5 etc. in the substrate 100 and has an insulating
`
`Y may be 20 µmas compared with 10 µm for y. Furthermore,
`
`coating 40 on thereon.
`
`the gate line 5(150) is typically of doped polysilicon,
`However the embodiment of FIG. 9 additionally com­
`
`
`
`
`
`
`whereas the conductive barrier material 240 is typically
`
`
`
`prises a metal coating 240c that is present on the insulating
`5
`
`metal having a much higher conductivity.
`
`
`
`coating 40, over the top and sides of the core 240. This metal
`
`
`
`
`
`coating 240c is connected to another circuit element of, for
`Multi-Conductor Barrier Embodiments of FIGS. 5 and 6
`
`
`
`
`
`example, the substrate 100 such as element 5,4, etc. of
`
`
`
`
`FIG. 5 illustrates a composite of two side-by-side barriers
`
`another TFT.
`
`
`210 and 210x, each comprising a metal core 240, 240x
`This struc