United States Patent 19
`Lowrey et al.
`
`US005.360992A
`Patent Number:
`11
`45 Date of Patent:
`
`5,360,992
`Nov. 1, 1994
`
`54 TWO PIECE ASSEMBLY FOR THE
`OTHER PUBLICATIONS
`SELECTION OF PENOUTS AND BOND
`OPTIONS ON A SEMICONDUCTORDEVICE “Z-Axis Conductive Adhesive' Zymet Inc., 7 Great
`75) Inventors: Tyler A. Lowrey, Boise, Id.; Alan R.
`Meadow Lane, E. Hanover, N.J. 07936.
`Reinberg, Westport, Conn.; Kevin D.
`Primary Examiner-Andrew J. James
`Martin, Boise, Id.
`Assistant Examiner-S. V. Clark
`Attorney, Agent, or Firm--Kevin D. Martin
`73) Assignee: Micron Technology, Inc., Boise, Id.
`(57)
`ABSTRACT
`21 Appl. No.: 221,974
`The invention comprises a semiconductor package
`22 Filed:
`Apr. 1, 1994
`which allows pinouts and bond options to be custom
`ized after the encasement of a die in plastic, ceramic, or
`other suitable materials. A first embodiment of the in
`vention has a first assembly comprising an encapsulated
`die having bond pads connected to bond wires which
`terminate in exterior pad portions on the exterior of the
`encapsulant. Conductive paths which are part of a sec
`ond assembly electrically connect with the exterior pad
`portions of the first assembly and pass signals to device
`pinouts, which can be leads or other connecting means,
`to an electronic device into which the module is in
`stalled. By selectively connecting the exterior pad por
`tions of the first assembly to the connection points of
`the conductive paths of the second assembly, the device
`pinouts and bond options can be selected. To manufac
`ture a device having different pinouts or bond options,
`a bottom section having a different design is used.
`
`
`
`20 Claims, 7 Drawing Sheets
`
`63
`
`Related U.S. Application Data
`Continuation of Ser. No. 811,768, Dec. 20, 1991, aban-
`doned.
`51) Int. Cl. ..................... H01L23/48; H01L 29/44;
`H01L 29/52; H01L 29/60
`52 U.S.C. .................................... 257/666; 257/698,
`257/692
`(58) Field of Search ............... 257/691, 698, 692, 693,
`257/690, 666
`o
`References Cited
`U.S. PATENT DOCUMENTS
`3,663,868 5/1972 Noguchi et al. ....................
`257/691
`4,901,136 2/1990 Neugebauer et al.
`257/698
`4,922,324 5/1990 Sudo .......
`257/698
`5,045,921 9/1991 Lin et al.
`5,302,849 4/1994 Covasin ............................... 257/676
`
`(56)
`
`Qualcomm Incorporated
`EX1014
`Page 1 of 13
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`U.S. Patent
`US. Patent
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`Nov. 1, 1994
`Nov.1,1994
`
`Sheet 1 of 7
`Sheet 1 of 7
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`5,360,992
`5,360,992
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`
`
`
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`Page 2 of 13
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`U.S. Patent
`US. Patent
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`Nov. 1, 1994
`Nov. 1, 1994
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`Sheet 2 of 7
`Sheet 2 of 7
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`5,360,992
`5,360,992
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`FIG. 2A
`FIG. 2A
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`U.S. Patent
`US. Patent
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`Nov. 1, 1994
`Nov. 1, 1994
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`Sheet 3 of 7
`Sheet 3 of 7
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`5,360,992
`5,360,992
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`FIG. 23
`FIG. 25
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`Page 4 of 13
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`U.S. Patent
`US. Patent
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`Nov. 1, 1994
`Nov. 1, 1994
`
`Sheet 4 of 7
`Sheet 4 of 7
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`5,360,992
`5,360,992
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`U.S. Patent
`US. Patent
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`Nov. 1, 1994
`Nov. 1, 1994
`
`Sheet 5 of 7
`Sheet 5 of 7
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`5,360,992
`5,360,992
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`FIG. 4
`FIG. 4
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`Page 6 of 13
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`U.S. Patent
`US. Patent
`
`Nov. 1, 1994
`Nov. 1, 1994
`
`Sheet 7 of 7
`Sheet 7 of 7
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`5,360,992
`5,360,992
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`

`1.
`
`TWO PIECE ASSEMBLY FOR THE SELECTION
`OF PINOUTS AND BOND OPTIONS ON A
`SEMICONDUCTOR DEVICE
`
`O
`
`5,360,992
`2
`another cell or plurality of cells in the row can be read
`by issuing a different address on the address lines and
`then toggling the column address strobe (CAS), thus
`executing faster memory access cycles.
`Similarly, static column mode might be selected at
`the wire bond stage. Static column mode is similar to
`fast page mode, but both RAS and CAS remain low,
`and a new address is presented to the address lines in
`order to read from or write to a different address in the
`row. Various other device modes and options are se
`lected during the wire bond step. Sometimes a bond pad
`is not connected with an output lead, and the option is
`not selected.
`One problem with selecting options by wire bonding
`an option into a package is that once the die is encapsu
`lated the package options cannot be changed. Various
`customers require a different combination of options or
`a number of different package options. The manufac
`turer must either assemble the package as the order is
`placed, or the manufacturer or buyer must keep a stock
`of each of the various device types. Assembling the
`devices as they are ordered implies long lead times,
`while keeping a large stock increases operating costs of
`the manufacturer or the buyer.
`Devices have been designed which allow for the
`selection of bond options after packaging of the die
`using an electrical in-package late programming tech
`nique. To fabricate this type of part, the die is attached
`to the lead frame and the die is encapsulated in plastic.
`Circuitry on the die allows the bond option to be elec
`trically selected. Using this technique, however, only
`options that are compatible with the package pin count
`in which the part was assembled are selectable.
`A package which allows the semiconductor manufac
`turer or buyer to package a die and configure bond
`options and pin counts as they are required would help
`solve the problems listed above. Note that even though
`many of the devices used as examples herein specifically
`mention die encapsulated in plastic, similar problems
`and solutions are workable for die housed in ceramic or
`other package materials.
`SUMMARY OF THE INVENTION
`One embodiment of the invention comprises the use
`of an inventive two-piece package. In some embodi
`ments, the addition of a third middle section as de
`scribed herein may have advantages over the two piece
`embodiments.
`A first assembly comprises a semiconductor die en
`cased in plastic, ceramic, or other suitable material. All
`available bond options (bond pads) are routed to the
`exterior portion of the package by a first assembly
`frame. Portions of the first assembly frame are exterior
`to the encasement and terminate in exterior pad por
`tions which can be conductively bonded to.
`A second assembly of the invention comprises a sec
`ond assembly frame which provides a means of input
`Moutput (I/O) between the die and the host into which
`it is installed. The second assembly frame comprises
`conductive paths to which the exterior pad portions are
`connected, the first assembly being conductively
`mounted to the second assembly thereby. With the
`two-piece embodiment of the invention, the frame of
`the second assembly determines the pinouts (the pin
`numbers associated with each of the signals of the de
`vice) of the various signals of the die contained within
`the first assembly.
`
`CROSS REFERENCE TO RELATED
`APPLICATION
`This is a continuation of application Ser. No.
`07/81 1,768, filed Dec. 20, 1991, now abandoned.
`FIELD OF THE INVENTION
`This invention relates to the field of semiconductor
`packaging. More specifically, several semiconductor
`package design embodiments are described which allow
`15
`for various backend- and user-selectable wire bond
`options and pinouts.
`BACKGROUND OF THE INVENTION
`Various types of semiconductor devices are manufac
`tured in much the same way. A starting substrate, usu
`20
`ally a thin wafer of silicon or gallium arsenide, is
`masked, etched, and doped through several process
`steps, the steps depending on the type of semiconductor
`devices being manufactured. This process yields a num
`ber of die on each wafer produced. The die are sepa
`25
`rated with a wafer saw, and then packaged into individ
`ual components.
`During the packaging process, several semiconductor
`die are attached to a lead frame, often with materials
`Such as conductive epoxy, various metals and alloys, or
`30
`other adhesives. Bond wires electrically connect (i.e.
`couple, directly or through intermediate paths) a num
`ber of bond pads on each die to conductive lead "fin
`gers' on the lead frame. Leads are interposed between
`the lead fingers and the host into which the device is
`35
`installed. The die, the wires, and a portion of the leads
`are encapsulated in plastic. The leads on the lead frame
`connect the die with the device into which the compo
`nent is installed, thereby forming an electrical pathway
`and a means of input/output (I/O) between the die and
`the host.
`The particular lead finger with which a bond pad is
`connected determines the pinout for that bond pad. For
`example, in a dynamic random access memory
`(DRAM) if a bond pad on the die which corresponds to
`45
`Address 0 (A0) is bonded to the lead finger correspond
`ing to Output Pin 5, then pin 5 on the package is used as
`A0. This hardwires the bond pad on the die to the out
`put of the lead frame, and remains that way for the life
`of the package. Once the die is encapsulated, the output
`50
`pins for the signals required to operate the die cannot be
`changed.
`In addition to providing external access to standard
`input and output signals, the wire bond step may also be
`used to select various optional operating features of an
`55
`integrated circuit (IC) product (such as a DRAM). In
`the case of a DRAM IC, device data width may be
`selected at the wire bond step thereby determining
`whether the die is written to and read from, for exam
`ple, 1 or 4 bits at a time. A 4 megabit (Mbit) device,
`therefore, can be configured as a 4Mbitx1 or a
`1Mbitx4, depending on how the bond pads are wire
`bonded to the lead frame.
`Fast page mode is another option which might be
`selected at wire bond. Fast page mode allows for two or
`65
`more successive reads or writes from the same row
`without requiring another row address strobe (RAS)
`signal. For example, if RAS is kept low after a read,
`
`Page 9 of 13
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`10
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`15
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`5,360,992
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`3
`bodiment of a die-first assembly frame attachment, the
`An optional third assembly, which, if used, is inter
`die 10 is supported by a die paddle 12. The paddle 12 is
`posed between the first and second assemblies, com
`prises means for "keying' the exterior pad portions to
`connected to the frame 14 by a tie bar 16 as is known in
`the art. Bond pads 18 on the die 10 are wire bonded 20
`desired locations on the second assembly frame. The
`to lead fingers 22 of the lead frame 14. Other embodi
`third assembly can comprise at least two different em
`ments having a die flip-chip mounted to the lead frame
`bodiments.
`may provide advantages. In any case, the lead fingers 22
`In a first embodiment, the third assembly is a noncon
`terminate in exterior conductive pads 24 which are
`ductive membrane having voids therethrough. The
`exterior to the first assembly 8. The pads 24 in the em
`conductive paths of the second assembly are located in
`bodiments shown herein are flush with the exterior of
`an “X” direction, while the exterior pad portions of the
`the package (element 26 in FIG. 1B), although other
`first assembly of this embodiment are bars extending in
`embodiments are possible. For example, the lead fingers
`a "Y' direction. By selectively placing the voids in the
`22 could terminate in J-leads, or other types of leads to
`membrane, the pads of the first assembly can either be
`form the exterior pads.
`connected with the conductive paths of the second
`A ceramic embodiment of this first assembly is possi
`assembly, or isolated from the conductive paths if no
`void is formed. Using said X-Y arrangement, any of the
`ble and would serve a similar function, the bond pads on
`the die being connected by bond wires to traces running
`bond options can be connected with any of the pinouts.
`through the ceramic body, and terminating in pads or
`Connecting is accomplished by coating the bars with a
`leads on the exterior of the first assembly. In the ce
`conductive material and interposing the insulative
`ramic embodiment, a lid would be required to hermeti
`membrane between the first and second assemblies. The
`20
`cally seal the die in the ceramic body as is presently
`conductive material fills the voids, thereby passing sig
`known in the art of semiconductor technology.
`nals between the first and second assemblies.
`In various embodiments of the invention, more than
`In a second embodiment, the third assembly com
`one bond pad may connect with a single exterior pad, or
`prises a flex circuit as used with tape automated bond
`ing. The second assembly has a single design, and the
`more than one exterior pad can connect with a single
`25
`bond pad. More often, however, one bond pad will
`layout of the flex circuit determines the pinouts and
`connect with a single lead finger, which will terminate
`options of the semiconductor device. The flex circuit is
`in a single pad on the exterior of the package. These
`conductively mounted to the first and second assen
`exterior pads allow for an electrical signal to pass be
`blies in a fashion consistent with tape automated bond
`ing (TAB) technology, for instance with solder, or by
`tween the die and a second assembly described below.
`30
`On a DRAM, these signals could comprise addresses,
`some other means such as the Z-axis conductive epoxy
`power, ground, and bond options such as data width
`described below. This nonmetallic material is conduc
`tive in a Z direction (vertically), but is substantially
`and other device modes (page mode, fast page mode,
`write-per-bit, etc.). Other signals are possible and likely
`nonconductive in an X-Y direction (horizontally).
`on other types of semiconductor devices such as static
`BRIEF DESCRIPTION OF THE DRAWINGS
`RAMs (SRAMS), microprocessors, and other logic and
`FIG. 1A is an isometric view, and 1B is a cross sec
`memory.
`An embodiment of a second assembly of the inven
`tion, showing a die mounted and wire bonded to a first
`tion, generally labeled as element 29 as shown in FIG.
`assembly frame as used with the inventive device,
`2A comprises a second assembly frame 30 which would
`which is then hermetically sealed in an encasement;
`FIG. 2A is an exploded view of a two piece embodi
`most often be manufactured from a conductive material
`such as a copper alloy. A ceramic, plastic, or other
`ment of the invention which has a first assembly di
`rectly connected with the second assembly with solder
`nonconductive material 32 can be added to the second
`assembly to support the elongated conductive paths 34,
`or other workable means;
`as shown in FIG.2B, and prevent them from bending or
`FIG. 2B shows the embodiment of 2A with the sec
`45
`shorting together. The paths 34 connect with the exte
`ond assembly supported by a nonconductive material
`rior pads 24 of the first assembly. As this second assem
`such as plastic or ceramic;
`bly is manufactured from a conductive material, con
`FIG. 3 is an exploded view (inverted from the view
`necting with the first assembly can occur at any point
`of FIGS. 1 and 2 to show detail of the first assembly) of
`along a path 34. The paths 34 of the second assembly are
`a three piece embodiment of the invention having a thin
`50
`connected with (or are formed into) outputs 36 which
`insulative membrane with voids therein to receive a
`conductive material which electrically connects the
`will connect with an electronic host into which the
`inventive device is installed. Connection of the exterior
`first and second assemblies;
`pads 24 of the first assembly and the paths 34 of the
`FIG. 4 is an isometric view of the die-first assembly
`second assembly are accomplished by any workable
`frame assembly of FIG. 3 before encapsulation;
`55
`means, such as by reflowing solder bumps formed on
`FIG. 5 is an isometric view of an alternate method of
`the exterior pads 24 of the first assembly or by using a
`forming the first assembly of FIG. 3; and
`FIG. 6 is an exploded view of a three piece embodi
`conductive adhesive such as a Z-Axis Conductive Ad
`hesive available from Zymet of E. Hanover, N.J. In any
`ment of the invention having a flex circuit interposed
`case, the paths 34 are routed between the exterior pads
`between the first and second assemblies which routes
`the signals from the first assembly to the appropriate
`24 of the first assembly to avoid undesired contact with
`other paths. With this two-piece embodiment, if an
`conductive paths on the second assembly.
`exterior pad 24 comprises a bond option which is not
`DETAILED DESCRIPTION OF THE
`desired, a path 34 will not be located below it, and
`INVENTION
`therefore it will not make contact therewith; since the
`exterior pad 24 is not connected with a path 34, this
`The invention comprises at least two assemblies.
`bond option would not be selected. Also, selection of a
`FIGS. 1A and 1B show one embodiment of a first as
`pinout for a particular signal is accomplished simply by
`sembly, generally described as element 8. In this em
`
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`connecting a pad 24 of the first assembly with the path
`bonded 20 to the first assembly frame 50. The die, bond
`34 of the second assembly corresponding to that pinout.
`wires, and a portion of the pads 44 are then encased in
`To move the signal to a different pinout, (a different
`plastic or other suitable material. A ceramic embodi
`output) a different second assembly is substituted. After
`ment of the inventive first assembly is also possible, and
`the first and second assemblies are connected, the tie 5
`can be easily constructed from this description by an
`bars 38 of the lower assembly are trimmed to isolate
`artisan of skill in the art.
`each of the outputs 36. The outputs 36 are then formed
`FIG. 5 shows a third embodiment of the first assem
`into a desired configuration, such as zigzag inline (ZIP),
`bly 8 of FIG. 3. In this embodiment, the die (not shown)
`dual inline (DIP), gull wing, or other lead types. FIGS.
`is placed on the paddle (not shown) of a first assembly
`2a and 2b show a complete second assembly frame
`frame (not shown), the frame having extremely long
`before a trim and form step. In either case, the unneces
`paths 52. The die, die paddle, and a portion of the frame
`Sary metal of the second assembly frame is trimmed
`are encased in plastic or other material, then the pads 52
`away to disconnect each of the outputs 36, and the
`are formed and adhered to the encasement material to
`outputs 36 are then formed into a desired shape. With
`form the first assembly 8. Attachment to the second
`assembly with the first assembly is accomplished in a
`the inventive semiconductor device, different device
`15
`pinouts can be selected after the die has been encapsu
`manner similar to that of FIG. 3.
`lated in plastic or encased in ceramic or another suitable
`Another embodiment of the first assembly for use
`material.
`with the embodiment as shown in FIG. 3 uses the first
`An inventive embodiment comprising an optional
`assembly of FIG. 1B. After forming the first assembly
`third assembly, generally described as element 39 may
`of FIG. 1B, lines are formed by patterning a conductive
`20
`have advantages. A first embodiment of this third as
`material such as conductive epoxy, conductive paste
`sembly 40, as shown in FIG. 3 (inverted to show detail
`(such as silver-filled paste), conductive ink or any other
`of the first assembly 8), is manufactured from a substan
`workable material to form lines similar to 44 as shown in
`tially insulative material such as polyimide or plastic,
`the first assembly 8 of FIG. 3. The lines couple with the
`and contains a number of holes or voids 42 through
`exterior pads 24 as shown on FIG. 1B.
`25
`which a conductive substance (not shown) can pass to
`In accordance with FIG. 6, another inventive en
`connect the pads 44 on a second embodiment of the first
`bodiment which may have advantages is to manufacture
`assembly with the paths 34 on the second assembly 29.
`the third assembly 39 from a flex circuit 60 using tape
`automated bonding (TAB) techniques. This embodi
`Each exterior pad 44 of the first assembly 8 of this em
`bodiment is connected with a bond pad on the die, and,
`ment shows a first assembly of FIG. 1 with additional
`30
`as with the first embodiment, usually only one bond pad
`pads 24 manufactured therein. Using this arrangement,
`changing the design of the second assembly 29 to
`of the die will be connected with one pad 44 of the first
`assembly. The pads 44 of the first assembly and paths 34
`change outputs would not be required, but a flex circuit
`of the second assembly form a grid. By placing the holes
`60 having different trace 62 routings would connect
`42 in the membrane 40 in a particular location, any of 35
`exterior pads 24 on the first assembly 8 with paths 64 on
`the conductive pads 44 of the first assembly can be
`the second assembly. In this embodiment, long paths on
`connected with any of the paths 34 of the second assem
`the second assembly would not be required which may
`bly to select any of the bond options and pinouts avail
`solve problems of lead movement associated in conven
`able on the die. The conductive pads 44 of the first
`tional lead frame designs that may be present in the
`assembly extend in a substantially X direction, while the
`inventive second assembly if the paths are not sup
`paths 34 of the second assembly extend in a substantially
`ported with an insulative material. With the FIG. 6
`Y direction, thus making possible the connecting of any
`embodiment, a second assembly is standard within out
`bond option to any pinout.
`put lead 66 types, and could comprise any number of
`For example, to provide a device having a pin 7
`lead types including ZIP, DIP, single inline (SIP), J
`ground signal, a hole is placed in the membrane at the
`leads, or leadless chip carrier (LCC). To change pinouts
`45
`junction of the pad 44 which is connected with the
`or device options, a flex circuit 60 having a different
`design would be used during the assembly of the device.
`ground bond pad on the die, and the pin 7 bar of the
`second assembly.
`The first and second assemblies would be connected to
`the flex circuit 60 using solder techniques known in the
`Holes 42 in the membrane 40 are filled with conduc
`tive material (not shown) and connect selected pads 44
`art, or by using other materials.
`50
`to the paths 34. By using membranes 40 having different
`Typical TAB technology employs one or more layers
`of copper or alloy traces 62 interposed between two or
`designs (i.e. holes 42 in different locations) different
`pads 44 can be connected with the paths 34 on the sec
`more layers of nonconductive material such as plastic or
`ond assembly. The conductive substance which fills the
`polyimide. On the top and bottom of the TAB tape are
`voids 42 in the membrane 40 and connects the pads 44
`first and second ends where the traces are not covered,
`55
`with the paths 34 could comprise a metal-based material
`which allows for connecting with a conductive material
`such as solder, a curable silver-glass conductive paste
`such as solder. To facilitate bonding of the copper or
`such as that available from Johnson-Matthey of San
`alloy traces with the tin/lead solder, these exposed
`Diego, Calif., or the Z-axis conductive epoxy available
`trace areas are often flashed with layers of gold or plati
`num chromium, copper, tungsten, nickel, or gold, and
`from Zymet described above, or other workable means.
`FIG. 4 shows the die-first assembly frame attachment
`solder bumps for reflow are formed over the flashing.
`of the first assembly 8 of the FIG. 3 embodiment. Each
`Alternately, a Z-axis conductive adhesive can be inter
`bond pad 18 on the die 10 is connected with a conduc
`posed between the first assembly and the flex circuit,
`tive pad 44 or pads with a bond wire 20 or wires. The
`and/or between the second assembly and the flex cir
`conductive pads 44 themselves replace the die paddle
`cuit. This adhesive would electrically connect the pads
`65
`12, thus supporting the die 10. A substance such as a
`and paths of the first and second assemblies to the traces
`nonconductive epoxy or Kapton (R) tape mechanically
`in a vertical direction, while providing an adhesive and
`supports the die 10 on the pads 44. The die 10 is wire
`an insulator in a horizontal direction.
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`6. The semiconductor device of claim 1 further con
`The semiconductor devices as described above pro
`prising a third assembly interposed between said first
`vide a means for allowing pinouts and wire bond op
`assembly and said second assembly, said third assembly
`tions to be selected after the die is hermetically sealed.
`comprising traces, each trace having first and second
`The invention is a relatively thin device, and would
`ends with said first end of one of said traces electrically
`allow the pinouts and bond options to be selected late in
`connected to one of said conductive pads, and said
`the manufacturing process by the semiconductor manu
`second end connected to one of said conductive paths,
`facturer or a large scale semiconductor user.
`said conductive path being electrically connected to
`What have been described are specific configurations
`said conductive pad through said trace.
`of the invention, as applied to particular embodiments.
`7. The semiconductor device of claim 1 wherein said
`Clearly, variations can be made to the original designs
`protective encasement comprises plastic and wherein a
`described in this document for adapting the invention to
`portion of said second assembly is encapsulated in plas
`other embodiments. For example, various materials can
`tic.
`be used for encapsulation, adhesion, and conductance,
`8. The semiconductor device of claim 1 wherein said
`and the device can comprise a zig-zag inline package,
`protective encasement comprises ceramic and wherein
`dual inline package, gull wing package, leadless chip
`said second assembly further comprises ceramic to Sup
`carriers, or a number of other pin types. Additional
`port said conductive paths.
`mechanical attachments for connection of the first and
`9. The semiconductor device of claim 1 wherein said
`second assemblies are possible. Also, the die as de
`wafer section is connected to said first assembly frame
`scribed can comprise several unsingularized die on a
`by flip chip bonding.
`20
`section of wafer material, or a number of singularized
`10. A semiconductor device, comprising:
`die. Therefore, the invention should be read as limited
`a) a first assembly comprising:
`only by the appended claims.
`i) a wafer section with bond pads for the passage of
`We claim:
`signals therethrough;
`1. A semiconductor device, comprising:
`ii) a first assembly frame supporting said wafer
`25
`a) a first assembly comprising:
`section, said first assembly frame having conduc
`i) a wafer section with bond pads for the passage of
`tive pads;
`signals therethrough;
`iii) bond wires electrically connecting said bond
`ii) a first assembly frame supporting said wafer
`pads with said first assembly frame;
`section, said first assembly frame having conduc
`wherein said wafer section, said bond wires, and a
`30
`tive pads;
`portion of said first assembly frame are hermeti
`iii) means for electrically connecting said bond
`cally sealed within a protective encasement, said
`pads with said first frame assembly;
`conductive pads having portions exterior to said
`wherein said wafer section, said means for electri
`encasement, wherein said first assembly frame is
`cally connecting, and a portion of said first assem
`electrically connected to said exterior pad portions;
`35
`bly frame are hermetically sealed within a protec
`b) a second assembly comprising a second assembly
`tive encasement, said conductive pads having por
`frame, said second assembly frame comprising:
`tions exterior to said encasement, wherein said first
`i) outputs for connecting with an electronic device
`assembly frame is electrically connected to said
`into which said semiconductor device is in
`exterior pad portions;
`stalled;
`b) a second assembly comprising a second assembly
`ii) a plurality of conductive paths, each of said
`frame, said second assembly frame comprising:
`conductive paths routing one of said signals be
`i) outputs for connecting with an electronic device
`tween one of said exterior pad portions and one
`into which said semiconductor device is in
`of said outputs,
`stalled;
`wherein said signals are routed between said exterior
`45
`ii) a plurality of conductive paths, each of said
`pad portions and said outputs by said conductive
`conductive paths routing one of said signals be
`paths, and a design of said conductive paths deter
`tween one of said external pad portions and one
`mines which one of said signals passes through
`of said outputs,
`each of said outputs.
`wherein a design of said conductive paths determines
`11. The semiconductor device of claim 10 wherein
`50
`which one of said signals passes through each of
`said conductive paths are electrically connected to said
`said outputs.
`exterior pad portions with solder.
`2. The semiconductor device of claim 1 wherein said
`12. The semiconductor device of claim 10 wherein
`means for electrically connecting said wafer section
`said conductive paths are electrically connected to said
`inputs and outputs with said first frame assembly com
`exterior pad portions through a nonconductive sheet
`55
`prises a bond wire.
`having voids therein, said voids receiving a conductive
`material which connects said conductive pads with said
`3. The semiconductor device of claim 1 wherein said
`conductive paths are electrically connected to said exte
`conductive paths.
`rior pad portions with solder.
`13. The semiconductor device of claim 10 wherein
`said conductive paths comprise bars for making an elec
`4. The semiconductor device of claim 1 wherein said
`60
`trical connection anywhere along said bars.
`conductive paths are electrically connected to said exte
`rior pad portions through a nonconductive sheet having
`14. The semiconductor device of claim 10 further
`comprising a third assembly interposed between said
`voids therein, said voids receiving a conductive mate
`first assembly and said second assembly, said third as
`rial which connects said exterior pad portions with said
`sembly comprising traces, each trace having first and
`conductive paths.
`second ends with said first end of one of said traces
`5. The semiconductor device of claim 1 wherein said
`electrically connected to one of said exterior pad por
`conductive paths comprise bars for making an electrical
`connection anywhere along said bars.
`tions, and said second end connected to one of said
`
`65
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`Page 12 of 13
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`5,360,992
`10
`encasement, wherein said first assembly frame is
`conductive paths, said conductive path being electri
`electrically connected to said exterior pad portions;
`cally connected to said exterior pad portion through
`b) a second assembly comprising a second assembly
`said trace.
`frame, said second assembly frame comprising:
`15. The semiconductor device of claim 10 wherein
`i) pinouts for connecting with an electronic device
`said protective encasement comprises plastic and
`into which said semiconductor device is in
`wherein a portion of said second assembly is encapsu
`stalled;
`lated in plastic.
`ii) a plurality of conductive paths, each of said
`16. The semiconductor device of claim 10 wherein
`conductive paths routing one of said signals be
`said protective encasement comprises ceramic and
`tween one of said exterior pad portions and one
`wherein said second assembly further comprises ce
`of said pinouts,
`ramic to support said conductive paths.
`wherein said signals are routed between said outputs
`17. A semiconductor memory device, comprising:
`and said exterior pad portions by said conductive
`a) a first assembly comprising:
`paths, and a design of said conductive paths deter
`i) a semiconductor die with bond pads, said bond
`mines which one of said signals passes through
`pads for the passage of signals therethrough,
`each of said outputs.
`each of said bond pads having a different signal
`18. The semiconductor device of claim 17 wherein
`passing therethrough, said signals comprising
`said protective encasement comprises plastic and
`bond options and addresses;
`wherein a portion of said second assembly is encapsu
`ii) a first assembly frame supporting said semicon
`lated in plastic.
`20
`ductor die, said first assembly frame having con
`19. The semiconductor device of claim 17 wherein
`ductive pads;
`said protective enca