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`MARTIN PECKERAR, Ph.D.
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` Dr. Peckerar is a specialist in the areas of materials science and technology. He has worked in
`microcircuit process development (primarily high resolution patterning, for which he was named a
`fellow of the IEEE in 1994), in non-volatile memory design and process development and in battery
`technology. He has taught microelectronic circuit design at the University of Maryland (College Park,
`MD) since 1980. More recently, he has directed his professional efforts to the development of power
`sources and power systems for low power electronics. Notable accomplishments include:
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`1. Lead process engineer on the Westinghouse Electric BORAM (Block oriented random access
`memory) – the first military grade non-volatile memory used in combat situations
`2. He invented the plasma radiation source used in EUV and in x-ray lithography. This is a core
`technology for the Intel-led EUV consortium.
`3. Dr. Peckerar led the NRL team that was the world’s first to demonstrate and to exploit self-
`assembly (SA) in lithographic patterning technology. The polysiloxane attachment chemistries
`he developed have been used as a paradigm for SA pattern development to this day. This
`preceded work done at Harvard, and elsewhere, that eventually used many of the same
`chemistries.
`4. Dr. Peckerar has pioneered in the field of electron beam proximity effect correction, supplying
`the first mathematically rigorous approach to this critical area of mask making and direct-
`write technology.
`5. Was the Navy’s designated technical manager of the DARPA Advanced Lithography Program.
`6. He led a design team that was the first to demonstrate neural-net based co- processor chips
`employing informational entropy regularization principles for optimal image reconstruction.
`7. University lead in a joint project with Sandia Laboratories and NASA to create a computer-
`aided design base for producing integrated circuits that work at 4K (and below) in ionizing
`radiation environments.
`8. He started and ran the Nanoelectronics Processing Facility (NPF) at the US Naval Research
`Laboratory. This activity merged with the crystal growth group to become the Interface and
`Thin Film Sciences Branch (also led by Dr. Peckerar.)
`9. He was awarded the University of Maryland’s outstanding invention of the year in physical
`science award (2008) for a flexible thin-film battery cell supplying more current per unit area
`than lithium. The cell is recyclable and environmentally benign.
`10. Dr. Peckerar also received the Inaugural University System of Maryland Entrepreneurship
`Award in 2013 for advanced battery development.
`11. He has Co-authored 2 books, one of which is a standard textbook used worldwide in
`semiconductor process technology. He has edited 4 other texts
`12. Development of flat, flexible, non-toxic, non-flammable batteries for wearable electronic and
`for concealable nodes in ad hoc networks
`13. Dr. Peckerar was founding partner in two start-up companies relating to these batteries
`14. The first, FlexEl, is specializing in ultrathin membrane based batteries for biological
`applications
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`Deposed twice. Testified before the ITC for three days.
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`Expert Witness work and Paid Consultancies:
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`15. The second, VersaVolt, is specializing in underwater batteries for sonobuoys and for flight data
`recorder secondary batteries
`16. He is the inventor of the deep-depletion CCD imager used in x-ray and in short wavelength IR
`imaging
`17. He developed the first CCD imager and read-out electronics demonstrated to be radiation hard
`out to 1 MRAD:Si while operating at 77K. This has been enabling technology in satellite
`imaging
`18. Dr. Peckerar holds 29 granted US patents.
`1. Expert Witness, DRAM technology, Milbank, Tweed Hadley McCloy, 2007-2010 (patent
`infringement on the physical implementation of the DDR3 specification.) Working with Jim
`Klaiber, now at Pryor Cashman. ITC Trial designation: Certain Dynamic Random Access
`Memory Devices and Products Containing Same.) Investigation Number: 337-TA-595.
`2. Expert Witness, battery technology, Finnegan 2011 (relating to battery applications in power
`tool technology.) Working on IPR with Tom Irving, representing Hitachi. IPR
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`3. Expert Witness, Non-Volatile Memory Technology, Winston Strawn 2014. Working with Vivian
`Kuo, J.C. Mascullo, David Enzminger and Dave Martens. ITC Trial designation: In the Matter of
`Certain Non-Volatile Memory Devices and Products Containing Same. This work included
`simulations of the chemical-mechanical polishing process for wafer planarization in integrated
`circuit fabrication technology. Investigation Number: 337-TA-909. Deposed twice. Testified
`before the ITC for two days.
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`4. Expert Witness, Matters relating to the layout and design of static random access memories,
`nvidia vs Samsung, working for Latham Watkins. IPR2015-01065. POCs Thomas Yeh and Bob
`Rosenberg, begun May 2015 and concluded in May, 2016. IPR. Deposed once.
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`5. Expert Witness, worked on an IPR in the matter of Postec and the validity of Milwaukee Tools
`patent on a lithium battery powered power tool. I worked for Middleton and Reutlinger
`(Robert H. Eichenberger, lead attorney.) Concluded June, 2017.
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`6. Expert Witness, in support of Nikon Corporation, Nikon Precision Inc., and Nikon Research
`Corporation of America, Inv. No. 337-TA-1137, defending against claims by ASML Netherlands.
`Concluded February 2019. Lead attorney: Sorin Zaharia.
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`7. Technical Consultant, National Institute of Aerospace in the area of power distribution
`systems
` Education:
` 1971-1975 Ph.D., University of Maryland
` 1968-1971 M.S, University of Maryland
` 1964-1968 B.S., SUNY Stony Brook
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`Professional Experience.
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`1. 2012-present Dr. Peckerar has co-founded two small businesses. The first, FlexEl LLC is a
`manufacturer of flexible electronic components and batteries. This company has partnered in
`the creation of non-flammable (lithium-free) power supplies for e-cigarettes and with medical
`electronics corporations for manufacturing ultrathin, flexible power sources. In addition, Dr.
`Peckerar was a co-founder of VersaVolt LLC, a company specializing in the creation of reserve
`batteries for underwater applications (such as extending the life of flight data recorders.)
`2. 1981-2012
`Professor, University of Maryland (College Park Campus). Dr. Peckerar is
`Professor of microelectronic process technology and analog systems design. He is author of
`the textbook Electronic Materials: Science and Technology (S.P. Murarka, co- author), the
`Korean Electronics Economy (with Mike Pecht) and Synthetic Microstructures for Biological
`Research (with Joel Schnur.) In 1980, Professor Peckerar was appointed lecturer in the ECE
`department. From 1981-2002, he was professor part-time, holding joint appointments at the
`university and at the Naval Research laboratory. He became tenured professor (full time) in
`2002, and he is currently professor, emeritus.
`3. 1981-2002 Branch Chief, Naval Research Laboratory, Washington, DC. Dr. Peckerar headed
`the Interface and Thin Films Branch. His responsibilities included management of the
`Nanoelectronics Processing Facility as well as the Laboratory for Advanced Materials
`Synthesis. Here, he developed sensor materials for visible, IR, UV and x-ray imaging. He also
`was Navy Manager of the DARPA Advanced Lithography Program. He pioneered in the
`development of e-beam proximity effect correction – an enabling technology for today’s
`microelectronic patterning technology.
`4. 1976-1981 Fellow Engineer, Westinghouse Corporation, Baltimore, MD. Dr. Peckerar headed
`the Advanced MOS Technology Group. He designed and developed non-volatile memory
`systems and radiation-hardened components. At Westinghouse he invented the plasma source
`for EUV and x-ray lithography.
`5. 1973-1976 Physicist, Naval Research Laboratory, Washington, DC. Dr. Peckerar worked in the
`area of x-ray spectroscopy (largely aimed at detecting environmental pollutants.)
`6. 1968-1973 Physicist, NASA Goddard, Greenbelt, MD. Dr. Peckerar performed component
`reliability studies for the first manned lunar program.
`1. Fellow, IEEE 1994: For Contributions to and Leadership in X-ray and Microlithography.
`2. Outstanding Invention of the year (2008) in physical sciences, presented by the Maryland
`Office Of Technology Commercialization: for a thin, conformable high energy storage density
`battery.
`3. First place in the University of Maryland's $75K Business Plan Competition for thin, flexible
`batteries (2009).
`4. Maryland Technology Enterprise
`Institute (MTECH/SAIC) $25K grants
`for battery
`development 2009
`5. Maryland State Incubator Company (FlexEl Batteries, LLC) of the Year Award, May 2010
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`Personal Awards:
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`Books authored.
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`Awards to Student Under my Supervision:
`Best Paper Awards:
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`6. Inaugural University System of Maryland’s Inaugural Entrepreneurship Award in 2013 for
`work developing FlexEl, LLC.
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`1. Wei Zhao. Best student poster award, International Device Research Symposium, December,
`2011.
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`2. Seokjin Kim. IEEE Autotestcon Best Graduate Student Paper award 2007 AND 2008 (we won
`two years in a row). This is the IEEE’s primer conference on test and evaluation.
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`3. Sanaz Adl, IEEE Sensors Symposium 2007, best student paper award.
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`4. Nick Kratzmeier, James Weincke and Jeffrey Allnutt: Admission into the BS/MS program
`1. S.Murarka, M. Peckerar, Electronic Materials Science and Technology, Academic Press, 1989.
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`2. M. Pecht, J. Bernstein, Daemon Searles and M.Peckerar, The South Korean Electronics Industry,
`CRC Press, 1997.
` Books edited.
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`1. M. Peckerar, M., J. Schnur and H. Stratton, Synthetic Microstructures in Biological Research,
`Plenum Press, New York, 1993. Re-issued in 2004.
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`2. M. Peckerar, "Electron-Beam X-Ray and Ion Beam Submicrometer Lithographies for
`Manufacturing II", Vol 1671 SPIE, San Jose, CA, 1992.
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`3. M. Peckerar, “Electron-Beam, X-Ray, and Ion Beam Lithographies For Manufacturing,” SPIE
`Proc. Vol. 1465 SPIE, San Jose, CA, 1991.
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`4. M. Peckerar and M. Postek, “Nanostructure Science, Metrology and Technology,” (With Mike
`Postek) SPIE Press, March 2002.
`1. M.Peckerar, R. Neidert, “High-Speed Microelectronics for Military Applications in the IEEE
`Press Anthology VLSI Engineering, V. Wohlfarth, W. Grobman, eds. (1985)
`2. C. Marrian, M. Peckerar and Y. Pati “Electronic Neural Nets For Solving Ill- Posed Problems
`With An Entropy Regulariser,” (with C. Marrian and Y. Pati), in Maximum Entropy And
`Bayesian Methods, J. Skilling (ed.), D. Reidel, Dordrecht, pp. 371-376 (1989).
`3. M. Peckerar, P.T. Ho, R. Chen, “High Resolution Lithography For Optoelectronics,” in McGraw
`Hill Handbook On Optoelectronics, R. Waynant, Ed.(1992).
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`Chapters in books.
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`4. Martin Peckerar and Milton Rebbert, "Advanced Materials Processes for Bio- Probes," in
`Synthetic Microstructures in Biological Research, Plenum Press, Edited M. Peckerar, J. M.
`Schnur H. Stratton, Pages 3-16, 1992.
`5. M. Peckerar, F. Perkins, E. Dobisz, and O. Glembocki “Issues in Nanolithography for Quantum
`Effect Device Manufacture,” (with in, The Handbook of Microlithography, Micromachining and
`Microfabrication P. Rai-Choudhury, ed., SPIE Press (1997).
`6. E. Dobisz, F. Perkins, M. Peckerar “E-Beam and Proximal Probe Processes
`for
`Nanolithography,” in Microlithography: Science and Technology, J.R. Sheats and B.W. Smith,
`eds. Marcel Dekker, New York, 1998. Re-issued in 2007.
`7. M. Peckerar, “Nanolithography With Electron Beams: Theory and Practice,” in: Direct-Write
`Technologies for Rapid Prototyping Applications, A. Pique andD. Chrissey (eds.), Academic
`Press, San Diego, CA(2001)
`8. F.Yesilkoy, C.Ropp, Z.Cummins, R.Probst, E.Waks, B.Shapiro, M.Peckerar*, “New Applications
`and Emerging Technologies”, editor M.Feldman, chapter in “Nanolithograpy: The Art of
`Fabricating Nanoelectronic, Nanophotonic, and Nanobiologic Devices and Systems”,
`Woodhead Publishing LTD, Cambridge, 2012.
`9. Yesilkoy F, Potbhare S, Kratzmeier N, Akturk A, Goldsman N, Peckerar M, Dagenais M. A Mid-
`IR antenna integrated with a geometrically asymmetrical metal-insulator-metal rectifying
`diode Rectenna Solar Cells. 2147483647: 163-188, 2013 DOI: 10.1007/978-1-4614-3716-1_8
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`Articles in Refereed Journals.
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` 1. M. Peckerar “Electron Beam Studies of Schottky Barrier Detector Surfaces”, IEEE Trans. Nuc. Sci
`NS-20, 383 (1973).
`2. M. Peckerar “On the Origin of the Increase in Schottky Barrier Height with Increasing Interfacial
`Oxide Thickness”, J. Appl. Phys. 45, 4652 (1974).
`3. D. B. Brown, J. V. Gilfrich, M. Peckerar, “Measurement and Calculation of Absolute Intensities of
`X-ray Spectra”, J. Appl., Phys., 46, 4537 (1975).
`4. M. Peckerar, S. Mak, L. Skolnick, “The Role of Electron Trapping in the Plasma Anodization of
`Aluminum”, Journal of the Electrochemical Society, 123, 190C (1976).
`5. M.H. White, J. Dzimianski and M. Peckerar, “Endurance of Thin-Oxide Non-Volatile MNOS
`Memory Transistors”, IEEE Trans. Electron Devices, ED-24 577 (1977) .
`6. M. Peckerar, D. Nagel, “X-Ray Imaging with Charge-Coupled Devices”, J. of Appl. Physics, 48, 2565
`(1977).
`7. R. McLouski, M. Peckerar and J. Schruers, “The Effect of HCl Residual Treatment on MNOS
`Memory Transistors”, J. Electrochemical Soc., 125, 985 (1978).
`8. D. Nagel and M. Peckerar, “Lithography and High Resolution Radiography with Pulsed X-rays” Jap.
`Jour. Appl. Phys., 472 (1978).
`9. M. Peckerar, P. Blaise and R. Fulton, “Radiation Effects in MOS Devices Caused by X- ray and E-
`beam Lithography”, JVST 16, 1658 (1979).
`10. D. Nagel and M. Peckerar, “Pulsed X-ray Lithography” Electron Letters, 14 781 (1979).
`11. M. Peckerar and N. Bluzer, “Hydrogen Annealed Nitride/Oxide Structures for Radiation
`Hardness”, IEEE Trans. Nuc. Sci., NS-27 1193 (1980).
`12. H. Stein, P. Peercy and M. Peckerar, “Properties of Magnetron Sputtered Amorphous
`Hydrogenated Silicon” Journal of Mat’l Sci., 10 797 (1981).
`13. M. Peckerar, D. Nagel and D. Baker, “X-Ray Imaging with CCDs”, Appl. Phys. Lttrs. 3955 (1981).
`14. R. Williams, J. Rife, D. Nagel, and M. Peckerar, “Instrumentation for X-UV Lithography at SURF II,”
`Nuc. Instr. and Methods, 195 267 (1982).
`15. M. Peckerar, C. Dozier, D. Brown, D. Patterson, D. McCarthy and D. Ma, “Radiation Effects
`Introduced By X-Ray Lithography in MOS Devices”, IEEE Trans. Nuc. Sci. 29(6), pp. 1697-
`1701(1982).
`16. D. Brown, D. Ma, C. Dozier and M. Peckerar, “Thermal Annealing of Radiation Induced Defects – A
`Diffusion Limited Process,” IEEE Trans. Nuc. Sci. 30(6), 4059(1983).
`17. M. Peckerar and D. Ma “Modeling Total Dose Effects in Narrow Channel Devices,” IEEE Trans. ED.,
`ED-30, p. 1159, (1983).
`18. M. Peckerar and R. Neidert, “High Speed Microelectronics for Military Applications”, Proc. IEEE
`71, p. 657, (1983).
`19. R.R. Whitlock, M.H. Emery, J.A. Stamper, E.A. McLean, S.P. Obenschain and M. Peckerar,
`“Observation of Rayleigh-Taylor-Like Structures in a Laser-Accelerated Foil”, Phys. Rev. Ltrs., 52,
`819 (1984).
`20. D.J. Nagel, M. Peckerar, C.M. Brown, M.L. Ginter, T.A. Robinson, T.J. McIlrath, and
`21. D.N. Carroll “Repetitively Pulsed-plasma Soft X-ray Source,” Appl. Optics 23, 1428 (1984).
`22. P. Gohil, H. Kapoor, D. Ma, M. Peckerar, T.J. McIlrath, M.L. Ginter “Soft X-ray Lithography Using
`Radiation from Laser-Produced Plasmas”, Appl. Optics 24, p. 2024 (1985).
`23. Christou and M. Peckerar, “Planar MOCVD GaA1As/GaAs High-Frequency Mixer Diodes,” Elect.
`Ltrs. 21(7) pp. 505-507 (1985).
`24. P. Gohil, H. Kapoor, D. Ma, T. McIlrath, M. Ginter and M. Peckerar, “Soft X-Ray Lithography Using
`Radiation From Laser Produced Plasmas”, Appl Opt. 24, p. 2024 (1985).
`25. M. Pepin, P. Alaterre, M. Chaker, R. Fabbro, B. Faral, I. Toubhans, D. Nagel and M. Peckerar, “X-ray
`Sources for Microlithography Created by Laser Radiation at l = 0.26 mm,” JVST B 5(1), 27 (1987).
`26. J. Bosier, M. Peckerar, D. McCarthy, N. Saks, D. Michels “Modeling UV Response of Rear Surface
`Sensitized Charge-Coupled Devices,” Appl. Phys. Letters, 50(18), 1295 (1987).
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`27. D. Ma, S. Qadri, and M. Peckerar “Double Crystal X-Ray Topographic Determination of Local Strain
`In Metal-Oxide-Semiconductor Devices,” Appl. Phys. Letters 51(22) 1827 (1987).
`28. P. Dutta, G. Candela, D. Chandler-Horowitz and M. Peckerar, “ Non-Destructive Characterization of
`Oxygen-Implanted Silicon-on-Insulator Films Using Multiple Angle Ellipsometry,” Jour. Appl.
`Phys. 64(5) 2754(1988).
`29. C. T. Yao, M. Peckerar, D. Friedman, H. Hughes, “On the Effect of Hot Carrier Stressing on MOSFET
`Terminal Capacitances,” IEEE Trans. ED, 35(b), 304 (1988).
`30. D. Ma, S. Qadri and M. Peckerar, “Characterization of Thin Boron-Doped Membranes by Double
`Crystal X-Ray Topography, JVST-B 7(6) 1594(1989).
`31. Culhane, M.Peckerar, and C. Marrian, “A Neural Net Approach to Discrete Hartley and Fourier
`Transforms,” IEEE Trans. Circ. Syst. 36(5) 695 (1989).
`32. C.R.K. Marrian and M. Peckerar, “Electronic “Neural” Net Algorithm for Maximum Entropy
`Solution of Ill-Posed Problems,” IEEE Trans. Circ. Syst. 36(2) 288(1989).
`33. C.R.K. Marrian and M. Peckerar, “Electronic “Neural” Net Algorithm for Maximum Entropy
`Solution of Ill-Posed Problems - Part II: Multiply Connected Electronic Circuit Implementation,”
`IEEE Trans. Circ. Syst. 37(1) 110(1990).
`34. M. Peckerar, J. Goldhar, P.T. Ho, and K. Rhee, “A Novel Test Structure for Grating Pitch
`Determination With Near Ångstrom Accuracy”, Jour. Appl. Phys. 68(10), 5381(1990).
`35. Y. Pati, A. Teolis, D. Park, R. Bass, K. Rhee, B. Bradie, and M. Peckerar, “An Error Measure for Dose
`Correction in E-Beam Nanolithography,” JVST B 8(6), p. 1882, 1990
`36. Barouch, E..,Hollerbach, U.; Orszag, S.A., Bradie, B., Peckerar, M., “Modeling process latitude in UV
`projection lithography,” Electron Device Letters, 12(10)513 - 514 (1991)
`37. S.AS. Shamma, M. Rebbert, J. Kossokowski, P. Isaacson, M.Peckerar, “Passive Microelectrode
`Arrays For Recording Of Neural Signals: A Simplified Process,” Rev. Sci Instrum., 62(9),
`2276(1991).
`38. J. Calvert, M-S. Chen, C. Dulcey, J. Georger, J. Schnur, P. Schoen and M. Peckerar, "Deep Ultraviolet
`Imaging Of Monolayer Films For High Resolution Lithography," JVST-B 9(6), 3447(1991).
`39. K. Rhee, M. Peckerar, A. Ting, L. Shirey, K. Foster, J. Andrews, Y.-C. Ku, "Patterning Tungsten Films
`With An Electron Beam Lithography System At 50 KeV For X-Ray Mask Applications," JVST B 9(6),
`3282(1991).
`40. C. Marrian, L. Dobisz and M. Peckerar, “Nanostructure Patterning,” Proc. IEEE 79(8), 1149(1991).
`41. J. Calvert, C.S. Dulcey, J. Schnur, J. Georger, M. Peckerar, G. Calabrese, P. Sricharoenchaikit, “New
`Surface Imaging Techniques For Sub-0.5 Micrometer Optical Lithography,” J. Sol. St. Technol.
`34(10), 77(1991).
`42. D. Ma, G.J. Campisi, and S.B. Qadri and M. Peckerar, "Characterization Of Silicon On Insulator
`Substrates Using Reflection Mode Double Crystal X-ray Topography," Thin Solid Films, vol. 206,
`27(1991).
`43. D. Ma, S.B. Qadri, M. Peckerar and D. McCarthy "Double Crystal X-Ray Topography
`Characterization Of An Electrical Bias Induced Stress Variation In Metal-Oxide- Semiconductor
`Field Effect Transistors," Thin Solid Films 206, p. 18 (1991).
`44. M. Jacunski and Martin C. Peckerar, "A Model for Radiation Induced Edge Leakage in Bulk Silicon
`nMOS Transistors", IEEE Transactions on Nuclear Science, 39(6), December 1992.
`45. R. A. Ghanbari, M. Burkhardt, D. A. Antoniadis, H. I. Smith, M. R. Melloch, K. W Rhee, M. C. Peckerar
`"Comparative Mobility Degradation in Modulation-Doped GaAs Devices After E-Beam and X-Ray
`Lithography," JVST B10(6), pp. 2890-2892, (1992).
`46. Kee Woo Rhee, David Ma, M. C. Peckerar, "Proximity Effect Reduction in X-Ray Mask Making
`Using Thin Insulating Layers," JVST B10(6), Page 3062-3066, Nov/Dec 1992.
`47. R. A. Ghanbari, W.Chu, M. Burkhardt, M. L.Schattenburg, K. W. Rhee, R. Bass, M. Peckerar and M. R.
`Melloch, "Fabrication of Parallel Quasi-One-Dimensional Wires Using a Novel Conformable X-Ray
`Mask Technology", JVST B10(6), pp. 3196-3199 (1992).
`48. W. Chu, C. Eugster, A Moel, E. E. Moon, J. A. del Alamo, M. L. Schattenburg, K. W. Rhee, M. R.
`Melloch. "Conductance Quantization in a GaAs Electron Waveguide Device Fabricated by X-Ray
`Lithography", JVST B 10(6), Page 2966-2969, (1992).
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`49. Eric A. Sprangle, John M. Andrews and M. Peckerar, "Dielectric Breakdown Strength of SiO2 Using
`a Stepped-Field Method,” J. Electrochem. Soc. 139(9), p.2617(1992)
`50. M.Peckerar, Milton Rebbert and Ganesh Gopalakrishnan, "Apparent Super Resolution in High-
`Contrast Photoresists,” Appl. Phys. Lett 61 (17), p. 2037(1992).
`51. Calvert, J.M., Georger, J.H., Schnur, J.M., Schoen, P.E., Peckerar, M.C., Pehrsson,P.E.,” Deep UV
`photochemistry and patterning of self-assembled monolayer films,” Thin Solid Films 210-
`211(pt1), pp. 359-363(1992).
`52. Y.C. Pati, Krishnaparasad and M.Peckerar, "An Analog Neural Network Solution To The Inverse
`Problem Of Early Taction”, IEEE Trans. Robotics And Automation. 8(2), p.196(1992).
`53. Ma, D.I. Campisi, G.J. Qadri, S.B. and Peckerar, M.C “Nondestructive evaluation of silicon-on-
`insulator substrates using X-ray double crystal topography,” JVST A (Vacuum, Surfaces, and
`Films) 10(4), p.1006(1992).
`54. Ma, D.I., Qadri, S.B., Peckerar, M.C. and McCarthy, D. “Characterization of the electrical bias
`induced strain variation in metal-oxide-semiconductor field effect transistors using X-ray double
`crystal topography,” JVST A (Vacuum, Surfaces, and Films) 10(4) p1012(1992).
`55. M.Peckerar and J.R. Maldonado “X-Ray-Lithography - An Overview,” Proc. IEEE,
`81(9), p1249(1993).
`56. Dobisz-EA, Marrian-CRK, Salvino-RE, Ancona-MA, Rhee-KW, and M. Peckerar “Thin Silicon-
`Nitride Films to Increase Resolution in E-Beam Lithography,” Opt. Eng. 32(10), p. 2452 (1993).
`57. Calvert-JM, Koloski-TS, Dressick-WJ, Dulcey-CS, Peckerar-MC, Cerrina-F, Taylor- JW, Suh-DW,
`Wood-OR, Macdowell-AA and Dsouza-R, “Projection X-Ray Lithography With Ultrathin Imaging
`Layers and Selective Electroless Metallization,” Opt. Eng. 32(10), p. 2437 (1993).
`58. K.W. Rhee and M. Peckerar “Proximity Effect Reduction Using Thin Insulating Layers,” Appl. Phys.
`Lett., 62(5) pp 533-534(1993).
`59. M. Peckerar and J. R. Maldonado, “The Advanced Lithography Program - Governments Role in X-
`Ray-Development,” Solid State Technology 37(6), pp 44,(1994).
`60. Witczak, S.C., Gaitan, M., Suehle, J.S., Peckerar, M.C., Ma, D.I., “The interaction of stoichiometry,
`mechanical stress, and interface trap density in LPCVD Si-rich SiNx---;Si structures,” Solid-State
`Electronics 37(10), pp. 1695-1704(1994).
`61. Chu-W, Foster-KW, Shirey-LM, Rhee-KW, Kosakowski-J, Isaacson-IP, Mccarthy-D., Eddy-CR,
`Dobisz-EA, Marrian-CRK and M. Peckerar, “Reactive Ion Etching of High- Aspect-Ratio 100 nm
`Linewidth Features in Tungsten” Appl. Phys. Lett., Vol 64 Iss 16 pp 2172-2174 (1994).
`62. Rebbert-M, Isaacson-P, Fischer-J, Greenhouse-MA, Grossman-J, Smith-HA and M. Peckerar,
`“Microstructure Technology for Fabrication of Metal-Mesh Grids,” Appl. Opt., 13(7), pp 1286-
`1292 (1994).
`63. Burkhardt-M, Smith-HI, Antoniadis-DA, Orlando-TP, Melloch-MR, Rhee-KW) andM. Peckerar,
`“Fabrication Using X-Ray Nanolithography and Measurement of Coulomb- Blockade in a Variable-
`Sized Quantum-Dot,” JVST B 12(6) pp 3611-3613 (1994.)
`64. Eddy-CR, Kosakowski-J, Shirey-LM, Dobisz-EA, Rhee-KW, Chu-W, Foster-KW, Marrian-CRK and
`M. Peckerar, “Effects of Etch Chemistry on SF6-Based Tungsten Etching by Electron-Cyclotron-
`Resonance Reactive Ion Etching” JVST B 12(6) pp 3351-3355 (1994).
`65. Owens-AL, Denison-TJ, Versnel-H, Rebbert-M, Shamma-SA and M. Peckerar, “Multielectrode
`Array for Measuring Evoked-Potentials from Surface of Ferret Primary Auditory-Cortex,” Jour.
`Neurosci. Method., 58(1-2) , pp 209-220 (1995).
`66. Grossman, K., Peckerar, M.C., “Active Current Limitation for Cold-Cathode Field Emitters,”
`Nanotechnology 5(4), p. 179-182(1994).
`67. M. Peckerar, S. Chang and C.R.K. Marrian, “Proximity Correction Algorithms and a Co- Processor
`Based on Regularized Optimization. Part I Description of the Algorithm,” JVST B, 13(6), p.
`2518(1995).
`68. M.Burkhardt, S. Silverman, H. I. Smith, K.Rhee and M. Peckerar, “Gap Control In Fabrication of
`Quantum Effect Devices Using X-Ray Nanolithography,” Microelectronic Engineering 7(1-4),
`307(1995).
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`69. C.Marrian, S. Chang and M. Peckerar, Proximity Correction for Electron Beam Lithography, Opt.
`Eng., 35(9), 2685(1996).
`70. M. Peckerar, C. Marrian and F.K. Perkins “Feature Contrast in Dose-Equalization Schemes Used
`for Electron-Beam Proximity Control,” JVST B 14(6), 3880(1996).
`71. M. Peckerar, “South Korea: A New Tiger Faces New Technology Issues,” Solid State Technology, p.
`77 Sept. 1996.
`72. C.R.K. Marrian, F.K. Perkins, D.W. Park, E.A. Dobisz, K.W. Rhee, R. Bass and M. Peckerar,
`“Modeling of Electron Elastic and Inelastic Scattering,” JVST B 14(6), 3864(1996).
`73. Wang, W.; Chang, C.; Ma, D.; Peckerar, M.; Berry, I.; Goldsman, N.; Melngailis, J., “Self-aligned sub-
`channel implant complementary metal-oxide semiconductor devices fabrication,” JVST B
`(Microelectronics and Nanometer Structures) 15(6), pp. 2816- 20(1997).
`74. F.K. Perkins, C.R.K. Marrian and M. Peckerar, “Novel Technique for Improving Pattern Placement
`in Membrane Mask Making,” JVST B 15(6) 2218(1997).
`75. Shen, C.C., Murguia, J., Goldsman, N. Peckerar, M.C., Melngailis, J., “Use Of Focused Ion Beams and
`Modeling to Optimize Sub-micron MOSFET Characteristics, , IEEE Trans. ED 45(2), 453(1998).
`76. Perkins, F.K., Peckerar, M.C., McCarthy, D. M. and Marrian, C.R.K., “Improving Electron Beam
`Pattern Placement with Through-the-Membrane Signal Monitoring,” JVST B 16(6), 3567(1998).
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`77. Wang, W. McCarthy, D. Park, D. Ma, D. Marrian, C. Peckerar, M. Goldsman, N., Melngailis, J. and
`Berry, I.L., “Fabrication and characterization of buried sub-channel implant n-metal-oxide-
`semiconductor transistors,” JVST B (Microelectronics and Nanometer Structures), 16(6), 3812-
`16(1998).
`78. Grun J, Fischer RP, M. Peckerar, D.W. Donnelly and B.C. Covington, “Athermal annealing of
`phosphorus-ion-implanted silicon,” Appl. Phys. Lett. 77 (13) ( 2000).
`79. M. Peckerar, R. Bass and K.-W.Rhee “Sub-0.1 mu electron-beam lithography for nanostructure
`development,” JVST B 18(6) 3143(2000).
`80. Grun J, Fischer RP, M. Peckerar, D.W. Donnelly and B.C. Covington, “Athermal Annealing of Silicon
`Implanted With phosphorus and Arsenic,” in Electrochemical Society Proceedings Vol. 2000-9
`(Rapid Thermal and Other Short-Time Processing Technologies) 107(2000).
`81. D.W. Donnelly and B.C. Covington, Grun J, Fischer RP and M. Peckerar, “Athermal Annealing of
`Low-Energy Boron Implants in Silicon,” Appl. Phys. Lett 78 (14), 2002 (2001).
`82. Peckerar, M.; Perkins, F.K.; Hodge-Miller, A.; Ehrlich, R.; Fertig, S.; Tender, L. “Sensor Sensitivity
`Training,” In IEEE Circuits and Devices Magazine 19(2), pp. 17-24(2003): IEEE, Journal Paper.
`(AN: 7594389)
`83. M. Peckerar, “Addressing Myths Of Science And Public Policy In The United States. Part I,” In IEEE
`Technology and Society Magazine 22(1), pp. 23-33(2003): IEEE, Journal Paper. (AN: 7556264)
`84. M. Peckerar, “Addressing myths of science and public policy: Part II” In IEEE Technology and
`Society Magazine 23(1) pp. 29-35(2004) : IEEE, Journal Paper. (AN: 7996446)
`85. M. Peckerar, “Preface to the 49th International Conference on Electron, Ion, Photon Beam and
`Nanofabrication Conference,” JVST-B, 23(6), 2577(2005).
`86. C.R. Eddy, Jr., M.A. Mastro, N.D. Bassim, M.E. Twigg, R.L. Henry, R.T. Holm, J.C. Culbertson, O.J.
`Glembocki, J.D. Caldwell, P.G. Neudeck, A.J. Trunek, J.A. Powell,
`87. M.C. Peckerar, Y. Ngu, F. Yan and S. Babu, “Approaches to Reduced-Defect Active Regions for III-N
`Devices,” ECS Transactions 3, 117-123 (2006).
`88. C. Eddy, R. Holm, R. Henry, M. Twigg, N. Bassim, L. Shirey, O. Glembocki, J. Culbertson, F. Perkins,
`M. Peckerar, Y. Ngu, F. Yan, “ Improved GaN Materials and Devices through Confined Epitaxy, Appl.
`Phys. Lettrs. 90, 162101 (2007).
`89. Y. Ngu, M.Peckerar, N. Goldsman, M. Khbeis, G. Metze, "An Electrochemical Cell with Capacitance-
`Enhanced Double Layer", ECS Transactions Volume 3, "Intercalation Compounds for Batteries and
`Hybrid Supercapacitors" (2007).
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`90. Akturk, A., Allnutt, J., Dilli, Z., Goldsman, N., Peckerar, M., “Device Modeling at Cryogenic
`Temperatures: Effects of Incomplete Ionization,” IEEE Transactions on Electron Devices 54(11),
`pp. 2984 – 2990(2007).
`91. Y. Ngu, M. Peckerar, X. Liu, M. Dagenais, J. Barry, and B. Dutt. “Lithography, Plasmonics and
`Subwavelength Aperture Exposure Technology,” JVST-B 25( 6), pp. 2471 - 2475 (2007).
`92. M. Peckerar, D.Sanders, A. Foli A. Srivastava and U. Vishkin“Recent Advances in Proximity Effect
`Correction for Electron Beam and Optical Lithography,” JVST-B 25(6), pp. 2288 – 2294(2007).
`93. Dilli, Z., Goldsman, N., Peckerar, M., Akturk, A., Metze,G., “Design and testing of a self-powered 3D
`integrated SOI CMOS system,” Microelectronic Engineering 85(2), pp. 388-394(2008).
`94. Adl, S. Peckerar, M., “Low-Noise Signal Processing Chain for High Capacitance Sensors,” IEEE
`Sensors Journal 8(11), pp.1864 – 1870(2008).
`95. Chung-Ching Shen, Kupershtok, R., Adl, S., Bhattacharyya, S.S., Goldsman, N., Peckerar, M., “Sensor
`Support Systems for Asymmetric Threat Countermeasures,” IEEE Sensors Journal 8(6), pp. 682 –
`692(2008).
`96. Currano, L.J., Bauman, S., Churaman,W., Peckerar, M., Wienke, W., Kim, S., Yu, M., Balachandran,B.,
`“Latching ultra-low power MEMS shock sensors for acceleration monitoring,” Sensors and
`Actuators A: Physical 147(2), pp. 490-497(2008).
`97. Kanyogoro, E., Peckerar, M., Hughes, H., Liu M., “Band gap engineered resistor for mitigating linear
`energy transfer sensitivities in scaled submicron CMOS technology SRAM cells,” Solid-State
`Electronics 52(10), pp. 1555-1562(2008).
`98. Seokjin Kim, Elkis, R., Peckerar, M., “Device Verification Testing of High-Speed Analog-to-Digital
`Converters in Satellite Communication Systems,” IEEE Transactions on Instrumentation and
`Measurement, 58(2), pp. 270 – 280(2009)
`99. Salter, T., Choi, K., Peckerar, M., Metze, G., Goldsman, N., “RF energy scavenging system utilising
`switched capacitor DC-DC converter,” Electronics Letters 45(7), pp. 374-376(2009).
`100.
`Lauritzen, K. C., Talisa, S. H. , Peckerar, M. ,” Impact of de-correlation Techniques on Sampling
`Noise in Radio-Frequency Applications,” IEEE Trans. Instrumentation and Measurement 59(9),
`pp.2272-2279(2010).
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`101. Y.Ngu, M.Peckerar, D. Sander, C. Eddy, M. Mastro, J. Hite, R. Holm, R. Henry, and A. Tuchman,
`“Array of Two UV-Wavelength Detector Types,” IEEE Trans. ED 57(6), pp. 1224-1229(2010).
`102. Akturk, M. Holloway, S. Potbhare, D. Gundlich, B. Li, N.Goldsman, M. Peckerar, K. Cheung,
`“Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation,” IEEE Trans. ED 57(6),
`pp. 1334-1342(2010).
`103.
`C.K Choi, F. Yesikloy, A. Cryssis, M. Dagenais and M. Peckerar, “New Process Development for
`Planar-Type SIS Tunnel Diodes,” Electr. Dev. Lettrs 31(8), pp 809- 811(2010).
`104.
`F. Yesilkoy,, K. Choi, M. Dagenais, and M. Peckerar, “Implementation of E-Beam Proximity
`Effect Correction using linear programming techniques for the fabrication of asymmetric bow-tie
`antennas,” Solid-State Electronics 54(10), pp. 1211-1215(2010).
`105. Akturk, M. Peckerar, K. Eng, J. Hamlet, S. Potbhare, E. Longoria, R. Young, T. Gurrieri, M. S.
`Carroll, N. Goldsman, “Compact Modeling of 0.35 mm SOI CMOS