RINCIPLES OF
`TRANSISTOR
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`ey
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`INTRODUCTION AND GUIDE TO THE DESIGN OF AMPLIFIERS,
`FUNCTION GENERATORS, RECEIVERS AND DIGITAL fo(eClaE
`
`CIRCUITS
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`Apple EX1006 Page 1
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`S.W. AMOS
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`IPR2020-01059
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`IPR2020-01059
`Apple EX1006 Page 1
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`TRANSISTOR
`
`ey
`
`INTRODUCTION AND GUIDE TO THE DESIGN OF AMPLIFIERS,
`FUNCTION GENERATORS, RECEIVERS AND DIGITAL fo(eClaE
`
`CIRCUITS
`
`Apple EX1006 Page 1
`
`S.W. AMOS
`
`IPR2020-01059
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`IPR2020-01059
`Apple EX1006 Page 1
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`IPR2020-01059
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`Apple EX1006 Page 2
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`IPR2020-01059
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`IPR2020-01059
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`IPR2020-01059
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`Butterworth-Heinemann Ltd
`Linacre House, Jordan Hill, Oxford OX2 8DP
`GRA memberof the Reed Elsevier group
`OXFORD LONDON BOSTON
`MUNICH NEW DELHI
`SINGAPORE
`TOKYO TORONTO WELLINGTON
`
`SYDNEY
`
`First published by Iliffe Books Ltd 1959
`Second edition 1961
`Third edition 1965
`Fourth edition 1969
`Fifth edition 1975
`Sixth edition 1981
`Seventh edition 1990
`_ Eighth edition 1994
`
`© S. W. Amos 1994
`
`All rights reserved. No part of this publication
`may be reproduced in any material form
`(including photocopying or storing in any medium byelectronic
`means and whetheror nottransiently or incidentally
`to someother useof this publication) without the
`written permission of the copyright holder except
`in accordance with the provisions of the Copyright,
`Designs and Patents Act 1988 or underthe terms of a
`licence issued by the Copyright Licensing Agency Ltd,
`90 Tottenham Court Road, London W1P 9HE,England.
`Applications for the copyright holder’s written permission
`to reproduce any part of this publication should be addressed
`to the publishers
`
`British Library Cataloguing in Publication Data
`Amos, S. W.
`)
`Principles of transistor circuits. — 8th ed. Th -
`1. Transistor circuits
`K 7 8 7/ > 9
`2. Electronic circuit design
`:
`I. Title
`"
`, Ae
`621.3815'30422
`TK7871.9
`ISBN 0 7506 1999 6
`/ G gGAf
`Library of Congress Cataloguing in Publication Data
`Amos, S.W. (Stanley William)
`Principles of transistor circuits/S.W. Amsypth
`ISBN 0 7506 1999 6
`I. Title
`1. Transistor circuits.
`SEP12 1994
`TK7871.9A45 1994.
`>
`621.381'528—dc20
`93-50682
`Printed in England by Clays Ltd, St Ives ol _ RECEIVED| _
`
`4 LIBRARIES j p. cm.
`
`/
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`|
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`16 Further Applications of Transistors and other
`Semiconductor Devices '
`
`Appendix A The Manufacture of Transistors and
`Integrated Circuits
`Appendix B Transistor Parameters
`Appendix C The Stability of a Transistor Tuned Amplifier
`Appendix D Semiconductor Letter Symbols
`
`Ii
`
`j
`
`Index
`
`361
`374
`380
`383
`
`389
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`APPENDIX D
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`Semiconductor Letter Symbols
`
`
`input capacitance (common-base, common-
`
`Bipolar
`Cobs Coos Cep Inter=terminal capacitance (collector-to-base, collector-
`to-emitter, emitter-to-base).
`Citor Cieo OPen-circuit
`input capacitance (common-base, common-
`emitter).
`Cis Cieo Short-circuit
`emitter).
`Cobor Cove’ Oben-circuit output capacitance (common-base, common-
`emitter).
`Cops: Coes Short-circuit output capacitance (common-base, common-
`emitter). -
`Cros Cres Short-circuit reverse transfer capacitance (common-base,
`common-emitter).
`.
`Cres Cre Depletion-layer capacitance (collector, emitter).
`fury» My, Small-signal short-circuit'forward currenttransfer ratio cut-off
`frequency (common-base, common-emitter).
`Snax Maximum frequencyofoscillation.
`fr Transition frequency or frequency at which small-signal forward
`current transfer ratio (common-emitter) extrapolates to unity.
`f, Frequency of unity current transfer ratio.
`Jpp» Jpp Large-signal insertion power gain (common-base, common-
`emitter).
`Jpv: Jpe Smnali-signal insertion power gain (common-base, common-
`emitter).
`\
`:
`Srp» 9rz Large-signal transducer powergain (common-base, common-
`emitter)
`Sips Je. SMall-signal transducer power gain (common-base, common-
`emitter).
`
`383
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`P;,, Pi. Small-signal input power (common-base, common-emitter).
`Pos, Pog Large-signal output power (common-base, common-emit-
`ter).
`P.»; Poe Small-signal output power (common-base, common-emitter).
`P, Total non-reactive power inputto all terminals.
`Prot max Maximum total dissipation.
`ry'C, Collector-base time constant.
`Teesaty SAtUration resistance, collector-to-cmitter.
`Re(yic)
`Re(y,.) -
`Tetea(ony Small-signal emitter-emitter on-state resistance.
`Rs Thermalresistance.
`Timp Ambient temperature.
`
`|
`
`i
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`/
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`Appendix D
`
`385
`
`T, Junction temperature.
`t, Delay time.
`t, Fall time.
`tore Turn-off time.
`t,, Turn-on time.
`t, Pulse time.
`t, Rise time.
`t, Storage time.
`w Pulse average time.
`Ves; Veo Veg Supply voltage, d.c. (base, collector, emitter).
`Vac: Ven,
`“Voce, Vee: Vers “ec Voltage, d.c. or average (base-to-
`collector, base-to-emitter, collector-to-base, collector-to-emitter, emit-
`ter-to-base, emitter-to-collector).
`per Pbes Vers Yees Veh» Vec Voltage, instantaneous value of alternating
`component (base-to-collector, base-to-emitter, collector-to-base, col-
`lector-to-emitter, emitter-to-base, emitter-to-collector).
`Vesrycno (formerly BV.g9) Breakdown voltage, collector-to-base,
`emitter open.
`:
`Vay Reach-through (punch-through) voltage.
`Yeo Yee Small-signal short-circuit forward-transfer admittance (com-
`mon-base, common-emitter).
`Yi», Vie Small-signal short-circuit input admittance (common-base,
`common-emitter).
`Vietimag Of Im(y;,.) Imaginary partofthe small-signal short-circuit input
`admittance (common-emitter).
`Vieteay OF Re(y;,) Real part of the small-signal short-circuit input
`admirtance (common-emitter).
`You» Yo¢ Small-signal short-circuit output admittance (common-base,
`common-emitter):
`Voetimagy OF Im(yo-) Imaginary part of the small-signal short-circuit
`output admittance (common-emitter).
`Voe(reaty OT Re(y,,) Real part of the small-signal short-circuit output
`admittance (common-emitter).
`Yeoo Vee Small-signal short-circuit reverse transfer admittance (com-
`mon-base, common-emitter).
`
`.
`
`i!
`Unijunction
`y Intrinsic stand-offratio.
`Ig,qmoa) Interbase modulated current.
`Ipg.o Emitter reverse current.
`I, Peak-point current.
`I, Valley-point current.
`‘gp Interbase resistance.
`\
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`386
`
`Principles of Transistor Circuits
`
`T, Junction temperature.
`t, Pulse time.
`t, Pulse average time.
`Vz,n, Interbase voltage.
`Ves eat) Emitter saturation voltage.
`Vop, Base-1 peak voltage.
`V, Peak-point voltage.
`V, Valley-point voltage.
`
`Field Effect
`
`Dees Digs Dogs D,, Common-source small-signal (forward transfer, input,
`output, reverse transfer) susceptance.
`Cg, Drain-source capacitance.
`Cg, Drain-substrate capacitance.
`Cj, Short-circuit input capacitance, common-source.
`Cys5 Short-circuit output capacitance, common-source.
`C,., Short-circuit reverse transfer capacitance, common-source.
`F or F Noisefigure, average or spot.
`Its Gis Gos Firs. Signal (forward transfer, input, output, reverse transfer)
`conductance.
`9m Iransconductance.
`-
`Jee? Gps SMall-signal insertion power gain (common-gate, common-
`source).
`Itg> Drs Smail-signal transducer power gain (common-gate, common-
`source).
`Joie Drain cut-off current!
`/Ton On-state drain current.
`
`Ipsg Zero-gate-voltage drain current.
`I, Gate current, d.c.
`Igy Forward gate current.
`Iga Reverse gate current:
`Igsg Reverse gate current, drain short-circuited to source.
`Igssr Forward gate current, drain short-circuited to source.
`Igssx Reverse gate current, drain short-circuited to source.
`I, Noise current, equivalent input.
`Im(¥,.), Im(,), Im(y,,), Im(),.)-
`I, Source current, d.c.
`. Isso Source cut-off current.
`Isps Zero-gate-voltage source current.
`Tas(ony) SMall-signal drain-source on-state resistance.
`Tpsion) Static drain-source on--state resistance.
`tagony Turn-on delay time.
`t, Fall time.
`
`“)
`
`’
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`
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`Appendix D
`
`387
`
`tore Turn-off time.
`‘ty, Turn-on time.
`t, Pulse time.
`t, Rise time.
`aa
`t, Pulse average time.
`Visrass Gate-source breakdown voltage.
`Vissycssr Forward gate-source breakdown voltage.
`(arjassr Reverse gate-source breakdown voltage.
`Von, Vac, Mss Supply voltage, d.c. (drain, gate, source).
`Vog Drain-gate voltage.
`Vps Drain-source voltage.
`Poston) Drain-source on-state voltage.
`Vpy Drain-substrate voltage,
`Vas Gate-source voltage.
`Vosr Forward gate-source voltage.
`Vosr Reverse gate-source voltage.
`Vostorr, Gate-source cut-off voltage.
`Vesan) gate-source threshold voltage.
`Voy Gate-substrate voltage.
`.
`V, Noise voltage equivalent input.
`Vsy Source-substrate voltage.
`Yr, Common-source small-signal short-circuit forward transfer admit-
`tance.
`¥iz Common-source small-signal short-circuit input admittance.
`¥,; Common-source small-signal short-circuit admittance.
`
`Diodes
`
`Diss Dissipation, watts.
`cy Barrier-layer capacitance.
`I, Forward current.
`Tiyav,) Average forward current.
`Term Repetitive peak forward current.
`Iyy Peak forward current.
`Tsu Surge (non-repetitive) forward current.
`I, Gate current.
`Igy Gate trigger current.
`1, Continuous average forward current (in half-wave rectification).
`I, Reverse current.
`.\
`T, Max. current in breakdown region (Zener diodes).
`T, Temperature coefficient of Zener voltage.
`Uy, Forward voltage.
`—
`U, Blocking (inverse) voltage.
`Upy Peak blocking voltage.
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`IPR2020-01059
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`\
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`IPR2020-01059
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