(19)
`
`(12)
`
`Europäisches Patentamt
`
`European Patent Office
`
`Office européen des brevets
`
`*EP001331666A2*
`EP 1 331 666 A2
`
`(11)
`
`EUROPEAN PATENT APPLICATION
`
`(43) Date of publication:
`30.07.2003 Bulletin 2003/31
`
`(21) Application number: 03000099.6
`
`(22) Date of filing: 08.01.2003
`
`(51) Int Cl.7: H01L 27/00, H01L 51/20
`
`(84) Designated Contracting States:
`AT BE BG CH CY CZ DE DK EE ES FI FR GB GR
`HU IE IT LI LU MC NL PT SE SI SK TR
`Designated Extension States:
`AL LT LV MK RO
`
`• Hiroki, Masaaki
`Atsugi-shi, Kanagawa-ken 243-0036 (JP)
`• Murakami, Masakazu
`Atsugi-shi, Kanagawa-ken 243-0036 (JP)
`• Kuwabara, Hideaki
`Atsugi-shi, Kanagawa-ken 243-0036 (JP)
`
`(30) Priority: 24.01.2002 JP 2002014902
`
`(71) Applicant: SEMICONDUCTOR ENERGY
`LABORATORY CO., LTD.
`Atsugi-shi Kanagawa-ken 243-0036 (JP)
`
`(72) Inventors:
`• Yamazaki, Shunpei
`Atsugi-shi, Kanagawa-ken 243-0036 (JP)
`
`(74) Representative: Grünecker, Kinkeldey,
`Stockmair & Schwanhäusser Anwaltssozietät
`Maximilianstrasse 58
`80538 München (DE)
`
`(54)
`
`Light emitting device and method of manufacturing the same
`
`(57)
`To provide a light emitting device high in relia-
`bility with a pixel portion having high definition with a
`large screen. According to a light emitting device of the
`present invention, on an insulator (24) provided be-
`tween pixel electrodes, an auxiliary electrode (21) made
`of a metal film is formed, whereby a conductive layer
`(20) made of a transparent conductive film in contact
`
`with the auxiliary electrode can be made low in resist-
`ance and thin. Also, the auxiliary electrode (21) is used
`to achieve connection with an electrode on a lower layer,
`whereby the electrode can be led out with the transpar-
`ent conductive film formed on an EL layer. Further, a
`protective film (32) made of a film containing hydrogen
`and a silicon nitride film which are laminated is formed,
`whereby high reliability can be achieved.
`
`Printed by Jouve, 75001 PARIS (FR)
`
`EP1 331 666A2
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`EP 1 331 666 A2
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`Description
`
`BACKGROUND OF THE INVENTION
`
`1. Field of the Invention
`
`[0001] The present invention relates to a semiconduc-
`tor device and, particularly, to a light emitting device hav-
`ing an organic light emitting element formed over a sub-
`strate having an insulating surface and a manufacturing
`method therefor. The present invention also relates to a
`module in which an IC etc. including a controller is
`mounted on a panel having the organic light emitting el-
`ement. Note that, in this specification, the panel and the
`module which have the organic light emitting element
`are collectively referred to as a light emitting device. Fur-
`ther, the present invention relates to an apparatus for
`manufacturing the light emitting device.
`[0002] Note that, in this specification, the term semi-
`conductor device refers to the devices in general which
`can function by utilizing semiconductor characteristics.
`The light emitting device, an electro-optic device, a sem-
`iconductor circuit, and an electronic device are all in-
`cluded in the category of the semiconductor device.
`
`2. Description of the Related Art
`
`[0003] Techniques of forming TFTs (thin film transis-
`tors) on substrates have been progressing greatly in re-
`cent years, and developments in their application to ac-
`tive matrix display devices is advancing. In particular,
`TFTs that use polysilicon films have a higher electric
`field effect mobility (also referred to as mobility) than
`TFTs that use conventional amorphous silicon films, and
`therefore high speed operation is possible. Develop-
`ments in performing control of pixels by forming driver
`circuits made from TFTs that use polysilicon films over
`a substrate on which the pixels are formed have there-
`fore been flourishing. It has been expected that various
`advantages can be obtained by using active matrix dis-
`play devices in which pixels and driver circuits are
`mounted on the same substrate, such as reductions in
`manufacturing cost, miniaturization of the display de-
`vice, increases in yield, and increases in throughput.
`[0004] Furthermore, research on active matrix light
`emitting devices using organic light emitting elements
`as self light emitting elements (hereinafter referred to
`simply as light emitting devices) has become more ac-
`tive. The light emitting devices are also referred to as
`organic EL displays (OELDs) and organic light emitting
`diodes (OLEDs).
`[0005] TFT switching elements (hereinafter referred
`to as switching elements) are formed for each pixel in
`active matrix light emitting devices, and driver elements
`for performing electric current control using the switch-
`ing TFTs (hereinafter referred to as electric current con-
`trol TFTs) are operated, thus making EL layers (strictly
`speaking, light emitting layers) emit light. For example,
`
`a light emitting device disclosed in JP 10-189252 is
`known.
`[0006] Organic light emitting elements are self light
`emitting, and therefore have high visibility. Backlights,
`necessary for liquid crystal display devices (LCDs), are
`not required for organic light emitting elements, which
`are optimal for making display devices thinner and have
`no limitations in viewing angle. Light emitting devices
`using organic light emitting elements are consequently
`being focused upon as substitutes for CRTs and LCDs.
`[0007] Note that EL elements have a layer containing
`an organic compound in which luminescence develops
`by the addition of an electric field (Electro Lumines-
`cence) (hereinafter referred to as EL layer), an anode,
`and a cathode. There is light emission when returning
`to a base state from a singlet excitation state (fluores-
`cence), and light emission when returning to a base
`state from a triplet excitation state (phosphorescence)
`in the organic compound layer, and it is possible to apply
`both types of light emission to light emitting devices
`manufactured by the manufacturing apparatus and film
`formation method of the present invention.
`[0008] EL elements have a structure in which an EL
`layer is sandwiched between a pair of electrodes, and
`the EL layer normally has a laminate structure. A "hole
`transporting layer / light emitting layer / electron trans-
`porting layer" laminate structure can be given as a typ-
`ical example. This structure has extremely high light
`emitting efficiency, and at present almost all light emit-
`ting devices undergoing research and development em-
`ploy this structure.
`[0009] Further, a structure in which: a hole injecting
`layer, a hole transporting layer, a light emitting layer, and
`an electron transporting layer are laminated in order on
`an anode; or a hole injecting layer, a hole transporting
`layer, a light emitting layer, an electron transporting lay-
`er, and an electron injecting layer are laminated in order
`on an anode may also be used. Fluorescent pigments
`and the like may also be doped into the light emitting
`layers. Further, all of the layers may be formed by using
`low molecular weight materials, and all of the layers may
`be formed by using high molecular weight materials.
`[0010] The conventional active matrix type light emit-
`ting device is composed of a light emitting element in
`which an electrode electrically connected with TFT on
`the substrate is formed as an anode, then the organic
`compound layer was formed on the anode. Light gener-
`ated at the organic compound layer is radiated from the
`anode that is a transparent electrode to TFT.
`[0011] However, in this structure, the problem has
`arisen when the resolution is intended to be risen that
`an aperture ratio is limited due to an arrangement of TFT
`and wirings in the pixel unit.
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`SUMMARY OF THE INVENTION
`
`[0012] According to the present invention, manufac-
`tured is an active matrix light emitting device having the
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`EP 1 331 666 A2
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`light emitting element with a structure in which an elec-
`trode on the TFT side electrically connected to the TFT
`on the substrate is formed as a cathode, on which an
`organic compound layer and an anode as a transparent
`electrode are formed in the stated order (hereinafter, re-
`ferred to as upper surface emission structure). Alterna-
`tively, manufactured is an active matrix light emitting de-
`vice having the light emitting element with a structure in
`which an electrode on the TFT side electrically connect-
`ed to the TFT on the substrate is formed as an anode,
`on which an organic compound layer and a cathode as
`a transparent electrode are formed in the stated order
`(hereinafter, also referred to as upper surface emission
`structure).
`[0013]
`In the above-mentioned respective structures,
`there arises a problem concerning a higher film resist-
`ance of a transparent electrode. In particular, when a
`film thickness of the transparent electrode is reduced,
`the film resistance further increases. If the film resist-
`ance of the transparent electrode serving as an anode
`or a cathode is increased, there arises a problem in that
`a potential distribution in the surface becomes nonuni-
`form due to voltage drop, which involves variations in
`luminance of the light emitting element. Accordingly, an
`object of the present invention is to provide a light emit-
`ting device having a structure useful in decreasing the
`film resistance of the transparent electrode of the light
`emitting element and a manufacturing method therefor
`and further to provide an electronic device using the
`above light emitting device as a display portion.
`[0014]
`In addition, another object of the present inven-
`tion is to increase reliability in the light emitting element
`and the light emitting device.
`[0015] According to the present invention, in manu-
`facturing the light emitting element formed over the sub-
`strate, a conductive film is formed on an insulator ar-
`ranged between pixel electrodes prior to formation of an
`organic compound layer for the purpose of suppressing
`the film resistance of the transparent electrode.
`[0016] Further, the present invention is characterized
`in that a lead wiring is formed using the above conduc-
`tive film to achieve connection with other wirings on a
`lower layer as well.
`[0017] According to a structure of the invention dis-
`closed in this specification, there is provided a light emit-
`ting device, including:
`
`a pixel portion having a plurality of light emitting el-
`ements each including: a first electrode; an organic
`compound layer formed on the first electrode in con-
`tact therewith; and a second electrode formed on
`the organic compound layer in contact therewith;
`a driver circuit; and
`a terminal portion,
`
`the device being characterized in that:
`
`in the pixel portion, end portions of the first electrode
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`connected to a thin film transistor are covered with
`an insulator, a third electrode made of a conductive
`material is formed on the insulator, the organic com-
`pound layer is formed on the insulator and the first
`electrode, and the second electrode is formed on
`the organic compound layer and the third electrode
`in contact therewith; and
`a portion where a wiring made of a material identical
`to that of the third electrode or that of the second
`electrode is connected with a wiring extended from
`a terminal is formed between the terminal portion
`and the pixel portion.
`
`[0018]
`In the above-mentioned structure, the third
`electrode may have a pattern shape identical to that of
`the insulator. In this case, it is formed using a mask iden-
`tical to that of the insulator.
`[0019] Alternatively, in the above-mentioned struc-
`ture, the third electrode may have a pattern shape dif-
`ferent from that of the insulator. In this case, after pat-
`terning the insulator, a film made of a conductive mate-
`rial is formed to form the third electrode using a mask
`different from that used for patterning the insulator.
`[0020] Also, according to another structure of the
`present invention, in manufacturing a light emitting ele-
`ment formed over a substrate, a conductive film is
`formed on an insulator arranged between pixel elec-
`trodes prior to formation of the organic compound layer,
`and after the organic compound layer and a transparent
`electrode are formed, an electrode made of a material
`high in conductivity is formed on the transparent elec-
`trode to realize low film resistance of the transparent
`electrode. Note that, the electrode formed on the trans-
`parent electrode is not formed in a portion serving as a
`light emitting region. Further, the present invention is al-
`so characterized in that a lead wiring is formed using the
`conductive film to achieve connection with other wirings
`formed on a lower layer.
`[0021] According to another structure of the invention
`disclosed in this specification, there is provided the light
`emitting device, including:
`
`a pixel portion having a plurality of light emitting el-
`ements each including: a first electrode; an organic
`compound layer formed on the first electrode in con-
`tact therewith; and a second electrode formed on
`the organic compound layer in contact therewith;
`a driver circuit; and
`a terminal portion,
`
`the device being characterized in that:
`
`in the pixel portion, end portions of the first electrode
`connected to a thin film transistor are covered with
`an insulator, the organic compound layer is formed
`on a part of the insulator and the first electrode, the
`second electrode is formed on the organic com-
`pound layer in contact therewith, and a third elec-
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`EP 1 331 666 A2
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`trode made of a conductive material is formed on a
`region of the second electrode which is not over-
`lapped with the first electrode in contact therewith;
`and
`a portion where a wiring made of a material identical
`to that of the third electrode or that of the second
`electrode is connected with a wiring extended from
`a terminal is formed between the terminal portion
`and the pixel portion.
`
`[0022] Also, in the above-mentioned structures, the
`light emitting device is characterized in that the second
`electrode is a cathode or an anode of the light emitting
`element.
`[0023] Also, in the above-mentioned structures, the
`light emitting device is characterized in that the third
`electrode is made of a material having electric resist-
`ance lower than that constituting the second electrode
`and is made of poly-Si doped with an impurity element
`imparting a conductivity type, an element selected from
`the group consisting of W, WSix, Al, Ti, Mo, Cu, Ta, Cr,
`and Mo, a film mainly containing an alloy material or a
`compound material mainly containing the element, or a
`laminate film thereof. For example, it is preferable that
`the third electrode is an electrode made of a laminate
`having a nitride layer or a fluoride layer as an uppermost
`layer.
`[0024] Also, in the above-mentioned structures, the
`light emitting device is characterized in that the first elec-
`trode is a cathode or an anode of the light emitting ele-
`ment. For example, when the second electrode is a
`cathode, the first electrode serves as an anode, where-
`as when the second electrode is an anode, the first elec-
`trode serves as a cathode.
`[0025] Also, in the above-mentioned structures, the
`light emitting device is characterized in that the insulator
`is a barrier (also referred to as bank) made of organic
`resin covered with an inorganic insulating film or is an
`inorganic insulating film. Note that, the light emitting de-
`vice is characterized in that the inorganic insulating film
`is an insulating film mainly containing silicon nitride with
`a film thickness of 10 to 100 nm.
`[0026] Also in the light emitting device, there is a prob-
`lem in that in a pixel emitting no light, an incident outside
`light (light outside the light emitting device) is reflected
`by the rear surface of the cathode (surface brought into
`contact with an light emitting layer) which acts as mirror
`and outside scenes are reflected in an observation sur-
`face (surface facing an observer side). In order to avoid
`the problem, the following is devised such that a circular
`polarization film is attached to the observation surface
`of the light emitting device to prevent the observation
`surface from reflecting the outside scenes. However,
`there arises a problem in that the circular polarization
`film is extremely expensive, which involves an increase
`in manufacturing cost.
`[0027] Another object of the present invention is to
`prevent the light emitting device from acting as mirror
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`without using the circular polarization film to accordingly
`provide an inexpensive light emitting device which at-
`tains low manufacturing cost thereof. Accordingly, the
`present invention is characterized by using an inexpen-
`sive color filter instead of using the circular polarization
`film. In the above-mentioned structure, it is preferable
`to provide a color filter corresponding to each pixel in
`the light emitting device in order to increase color purity.
`Also, a black portion (black organic resin) of the color
`filter may be arranged so as to overlap each portion be-
`tween light emitting regions. Further, the black portion
`(black colored layer) of the color filter may be also ar-
`ranged so as to overlap a portion where different organic
`compound layers are partially overlapped with each oth-
`er.
`[0028] Note that, the color filter is provided in an emis-
`sion direction of an emitted light, i.e., provided between
`the light emitting element and the observer. For exam-
`ple, when the light is not allowed to pass through the
`substrate having formed the light emitting element ther-
`eon, the color filter may be attached to the sealing sub-
`strate. Alternatively, when the light is allowed to pass
`through the substrate having formed the light emitting
`element thereon, the color filter may be attached there-
`to. Thus, it is possible to dispense with the circular po-
`larization film.
`[0029]
`In addition, it is extremely effective that as an
`anode on a layer containing an organic compound, a
`transparent conductive film (typically, ITO or ZnO) is
`used, on which a protective film made of an inorganic
`insulating film is formed. The following is also effective:
`as a cathode containing an organic compound, a metal
`thin film (with a film thickness allowing a light to pass
`the film) made of Al, Ag, and Mg, or an alloy thereof (typ-
`ically, AlLi) is used, on which the protective film made of
`the inorganic insulating film is formed.
`[0030] Also, before the protective film made of the in-
`organic insulating film is formed, it is preferable that a
`film containing hydrogen, typically a thin film mainly con-
`taining carbon, or a silicon nitride film is formed by a
`plasma CVD method or a sputtering method. Also, the
`film containing hydrogen may be a laminate film consist-
`ing of the thin film mainly containing carbon and the sil-
`icon nitride film.
`[0031] Further, according to another structure of the
`present invention, there is provided the light emitting de-
`vice including a light emitting element over a substrate
`having an insulating surface, the light emitting element
`including an anode, a cathode, and an organic com-
`pound layer interposed between the anode and the
`cathode, characterized in that the light emitting element
`is covered with a film containing hydrogen.
`[0032]
`If heat treatment is performed within a range
`of temperature to which the organic compound layer can
`be resistant and heat generated when the light emitting
`element emits the light is utilized, hydrogen can be dif-
`fused from the film containing hydrogen to terminate de-
`fects in the organic compound layer with hydrogen (ter-
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`mination). By terminating the defects in the organic com-
`pound layer with hydrogen, the light emitting device can
`be increased in its reliability. Also, when the film con-
`taining hydrogen is formed, hydrogen turned into a plas-
`ma can be used to terminate defects in the organic com-
`pound layer with hydrogen. The protective film formed
`so as to cover the film containing hydrogen also func-
`tions to block hydrogen diffused toward the protective
`film side and to efficiently diffuse hydrogen into the or-
`ganic compound layer to terminate defects in the organ-
`ic compound layer with hydrogen. Further, the film con-
`taining hydrogen can serve as the protective film for the
`light emitting element.
`[0033] Further,
`the film containing hydrogen can
`serve as a buffer layer. When the silicon nitride film is
`formed in contact with the transparent conductive film
`by a sputtering method, there is a possibility that impu-
`rities (In, Sn, Zn, etc.) contained in the transparent con-
`ductive film are mixed into the silicon nitride film. How-
`ever, by forming the film containing hydrogen as a buffer
`layer therebetween, it is also possible to prevent mixture
`of the impurities into the silicon nitride film. According to
`the above structure, the buffer layer is formed, so that
`the impurities (In, Sn, etc.) can be prevented from mixing
`therein from the transparent conductive film and a su-
`perior protective film having no impurities can be
`formed.
`[0034] According to another structure of the present
`invention, there is provided the light emitting device in-
`cluding a light emitting element over a substrate having
`an insulating surface, the light emitting element includ-
`ing an anode, a cathode, and an organic compound lay-
`er interposed between the anode and the cathode, char-
`acterized in that the light emitting element is covered
`with a film containing hydrogen which is covered with a
`protective film made of an inorganic insulating film.
`[0035] Also, a manufacturing method capable of real-
`izing the above-mentioned structure is included in the
`present invention. According to a structure relating to a
`manufacturing method of the present invention, there is
`provided a manufacturing method for a light emitting de-
`vice, characterized by including:
`
`forming a TFT on an insulating surface;
`forming a cathode electrically connected to the TFT;
`forming an organic compound layer on the cathode;
`and
`forming an anode on the organic compound layer
`and then forming a film containing hydrogen on the
`anode.
`
`[0036] Also, according to another structure relating to
`the manufacturing method of the present invention,
`there is provided the manufacturing method for a light
`emitting device, characterized by including:
`
`forming a TFT on an insulating surface;
`forming an anode electrically connected to the TFT;
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`forming an organic compound layer on the anode;
`and
`forming a cathode on the organic compound layer
`and then forming a film containing hydrogen on the
`cathode.
`
`[0037]
`In the above-mentioned structures relating to
`the manufacturing method of the present invention, the
`method is characterized in that the film containing hy-
`drogen is formed by a plasma CVD method or a sput-
`tering method within a range of temperature to which
`the organic compound layer can be resistant, for exam-
`ple, a range from room temperature to 100°C or less
`and that the film containing hydrogen is a thin film mainly
`containing carbon or a silicon nitride film.
`[0038]
`In the above-mentioned structures relating to
`the manufacturing method of the present invention, the
`method is characterized in that a step of forming the or-
`ganic compound layer is performed by an evaporation
`method, a coating method, an ion plating method, or an
`ink jet method.
`[0039]
`In the above-mentioned structures relating to
`the manufacturing method of the present invention, the
`method is characterized in that a protective film made
`of an inorganic insulating film is formed on the film con-
`taining hydrogen.
`[0040]
`In the above-mentioned structures relating to
`the manufacturing method of the present invention, the
`method is characterized in that when the film containing
`hydrogen is formed, a defect in the organic compound
`layer is terminated with hydrogen.
`[0041] Also, in order to prevent deterioration due to
`moisture or oxygen, when the light emitting element is
`sealed with a sealing can or a sealing substrate, a space
`to be sealed may be filled with a hydrogen gas or with
`hydrogen and inert gas (rare gas or nitrogen).
`[0042] According to another structure of the present
`invention, there is provided the light emitting device in-
`cluding a light emitting element over a substrate having
`an insulating surface, the light emitting element includ-
`ing an anode, a cathode, and an organic compound lay-
`er interposed between the anode and the cathode, char-
`acterized in that the light emitting element is sealed with
`a substrate having a light-transmissive property and a
`sealing member, and a sealed space contains hydro-
`gen.
`[0043]
`the light
`In the above-mentioned structure,
`emitting device is characterized in that the light emitting
`element is covered with the film containing hydrogen
`(thin film mainly containing carbon or silicon nitride film).
`[0044] Also, with the above-mentioned structure, heat
`treatment is performed within a range of temperature to
`which the organic compound layer can be resistant and
`heat generated when the light emitting element emits
`the light is utilized, so that hydrogen can be diffused from
`the space containing hydrogen to terminate defects in
`the organic compound layer with hydrogen. By terminat-
`ing defects in the organic compound layer with hydro-
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`gen, the light emitting device can be increased in its re-
`liability.
`[0045] Note that, in this specification, all the layers
`provided between the cathode and the anode are col-
`lectively referred to as an EL layer. Thus, the above-
`mentioned hole injection layer, hole transportation layer,
`light emitting layer, electron transportation layer, and
`electron injection layer are all included in the EL layer.
`[0046] The present invention is characterized in that
`the thin film mainly containing carbon is a DLC (diamond
`like carbon) film having a thickness of 3 to 50 nm. The
`DLC film has an SP3 bond as a bond between carbons
`in terms of short range order but has an amorphous
`structure in a macro level. The composition of the DLC
`film is carbon and hydrogen with the contents of 70 to
`95 atoms% and 5 to 30 atoms%, respectively. Thus, the
`film is extremely hard and superior in an insulating prop-
`erty. Such a DLC film is characterized in that gas per-
`meability with respect to moisture, oxygen, etc. is low.
`Also, it is known that the film has hardness of 15 to 25
`GPa as a result of measurement by a microhardness
`meter.
`[0047] The DLC film can be formed by a plasma CVD
`method (typically, RF plasma CVD method, microwave
`CVD method, electron cyclotron resonance (ECR) CVD
`method, or the like), a sputtering method, or the like. Any
`film formation method can be adopted to form the DLC
`film with good adhesiveness. The DLC film is formed
`with the substrate placed on the cathode. Also, when a
`negative bias is applied thereto and ion impact is utilized
`to some degree, a minute and hard film can be formed.
`[0048] As a reaction gas used for film formation, a hy-
`drogen gas and a hydrocarbon-based gas (e.g., CH4,
`C2H2, C6H6, or the like) are used, which are ionized due
`to glow discharge, and ions are accelerated and abutted
`against a cathode to which a negative self-bias is ap-
`plied to thereby form the film. Thus, a minute and
`smooth DLC film can be obtained.
`[0049] Also, the DLC film is characterized by including
`a transparent or semi-transparent insulating film with re-
`spect to a visible light.
`[0050] Further, in this specification, the term transpar-
`ent with respect to the visible light means a state in
`which transmittance of the visible light is 80 to 100% and
`the term semi-transparent with respect to the visible light
`means a state in which transmittance of the visible light
`is 50 to 80%.
`
`BRIEF DESCRIPTION OF THE DRAWINGS
`
`[0051]
`
`In the accompanying drawings:
`
`FIGs. 1A to 1C are sectional views in accordance
`with Embodiment Mode 1 of the present invention;
`FIG. 2 is a top view in accordance with Embodiment
`Mode 1 of the present invention;
`FIGs. 3A to 3D each show a terminal portion in ac-
`cordance with Embodiment Mode 1 of the present
`
`5
`
`10
`
`15
`
`20
`
`25
`
`30
`
`35
`
`40
`
`45
`
`50
`
`55
`
`6
`
`invention;
`FIGs. 4A and 4B each show a laminate structure in
`accordance with Embodiment Mode 2 of
`the
`present invention;
`FIGs. 5A and 5B are top views in accordance with
`Embodiment Mode 3 of the present invention;
`FIGs. 6A to 6C are sectional views in accordance
`with Embodiment Mode 3 of the present invention;
`FIGs. 7A to 7C are top views in accordance with
`Embodiment Mode 3 of the present invention;
`FIGs. 8A to 8C each show a mask in accordance
`with Embodiment Mode 3 of the present invention;
`FIGs. 9A to 9C are sectional views in accordance
`with Embodiment Mode 4 of the present invention;
`FIGs. 10A to 10C are sectional views in accordance
`with Embodiment Mode 5 of the present invention;
`FIG. 11 shows an example of a manufacturing ap-
`paratus in accordance with Embodiment 2 of the
`present invention;
`FIG. 12 shows an example of a manufacturing ap-
`paratus in accordance with Embodiment 2 of the
`present invention;
`FIGs. 13A to 13F each show an example of an elec-
`tronic device; and
`FIGs. 14A to 14C each show an example of an elec-
`tronic device.
`
`DETAILED DESCRIPTION OF THE PREFERRED
`EMBODIMENTS
`
`[0052] Embodiment modes of the present invention
`will be described below.
`
`[Embodiment Mode 1]
`
`[0053] FIG. 2 is a top view of an EL module. In the
`figure, over a substrate (also referred to as TFT sub-
`strate) where a number of TFTs are provided, there are
`formed a pixel portion 40 used for display, driver circuits
`41a and 41b for driving pixels of the pixel portion, a con-
`necting portion for connecting an electrode formed on
`an EL layer and a lead wiring, and a terminal portion 42
`to which an FPC is attached for connecting an external
`circuit therewith. Also, a substrate for sealing an EL el-
`ement and a sealing member 33 are used to attain a
`sealed state. FIG. 1A is a sectional view taken along the
`dashed line A-A' of FIG. 2.
`[0054] The pixels are arranged regularly in the direc-
`tion of the dashed line A-A'. Here, an example of the
`pixels arranged in the order of R, G, and B in an X di-
`rection will be shown.
`[0055]
`In FIG. 1A, a light emitting region (R) indicates
`a region for emitting a red light; a light emitting region
`(G), a region for emitting a green light; and a light emit-
`ting region (B), a region for emitting a blue light. These
`light emitting regions of three colors realize a light emit-
`ting display device capable of full color display.
`[0056] Also, in FIG. 1A, a TFT 1 is an element for con-
`
`SAMSUNG EX. 1006 - 6/35
`
`

`

`11
`
`EP 1 331 666 A2
`
`12
`
`trolling a current flowing in an EL layer 17 emitting a red
`light and reference numerals 4 and 7 denote source or
`drain electrodes. Further, a TFT 2 is an element for con-
`trolling a current flowing in an EL layer 18 emitting a
`green light and reference numerals 5 and 8 denote
`source or drain electrodes. A TFT 3 is an element for
`controlling a current flowing in an EL layer 19 emitting
`a blue light and reference numerals 6 and 9 denote
`source or drain electrodes. Reference numerals 15 and
`16 denote interlayer insulating films formed of an organ-
`ic insulating material or an inorganic insulating film ma-
`terial.
`[0057] Reference numerals 11 to 13 each denote an
`anode (or a cathode) of the organic light emitting ele-
`ment and 20 denotes a cathode (or an anode) of the
`organic light emitting element. In this example, the cath-
`ode 20 is made of a laminate film consisting of a thin
`metal layer (typically, an alloy of MgAg, MgIn, AlLi, or
`the like) and a transparent conductive film (an alloy of
`an indium oxide and a tin oxide (ITO), an alloy of an in-
`dium oxide and a zinc oxide (In2O3-ZnO), a zinc oxide
`(ZnO), and the like), through which light from the respec-
`tive light emitting elements passes. Note that, the trans-
`parent conductive film is provided not to function as a
`cathode but to decrease the electric resistance. As an
`anode, the following may be used: a material having a
`high work function, specifically, platinum (Pt), chromium
`(Cr), tungsten (W), or a nickel (Ni); a transparent con-
`ductive film (ITO, ZnO, or the like); and a laminate there-
`of.
`[0058] Also, organic insulators 24 (also referred to as
`barrier or bank) cover both ends of the anodes (or cath-
`odes) 11 to 13 and portions therebetween. Further, the
`organic insulators 24 are covered with inorganic insu-
`lating films 14. An organic compound layer is partially
`formed on each organic insulator 24.
`[0059] On the organic insulators 24 (also referred to
`as barrier or bank) covered with the inorganic insulating
`f