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`FUNCTION GENERATORS, RECEIVERS AND DIGITAL CIRCUITS
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`Principles of
`Transistor
`Circuits
`
`EIGHTH EDITION
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`\\KN
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`/Principles of
`Transistor
`
`Cll'CllltS/
`
`EIGHTH EDITION
`
`INTRODUCTION TO THE DESIGN OF
`AMPLIFIERS, RECEIVERS AND DIGITAL CIRCUITS
`
`SNMOS, BSC, CENG, MIEE
`
`formerly Head of Technical Publications Section,
`Engineering Training Department,
`If
`British Broadcasting Corporation
`i,
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`I
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`Butterworth—Heinemann Ltd
`Linacre House, Jordan Hill, Oxford OX2 8DP
`
`-&A member of the Reed Elsevier group
`OXFORD LONDON BOSTON
`MUNICH NEW DELHI
`SINGAPORE
`TOKYO TORONTO WELLINGTON
`
`SYDNEY
`
`First published by IlilTe Books Ltd 1959
`Second edition 1961
`Third edition 1965
`Fourth edition 1969
`Fifth edition 1975
`Sixth edition 1981
`Seventh edition 1990
`. Eighth edition 1994
`
`© S. W. Amos 1994
`
`All rights reserved. No part of this publication
`may be reproduced in any material form
`(including photocopying or storing in any medium by electronic
`means and whether or not transiently or incidentally
`to some other use of this publication) without the
`written permission of the copyright holder except
`in accordance with the provisions of the Copyright,
`Designs and Patents Act 1988 or under the terms of a
`licence issued by the Copyright Licensing Agency Ltd,
`90 Tottenham Court Road, London WlP 9HE, England.
`Applications for the copyright holder’s written permission
`to reproduce any part (if this publication should be addressed
`to the publishers
`
`"
`TK7871.9
`
`(7
`
`1
`
`"LIBRARIES p. cm.
`
`ISBN 0 7506 1999 6
`1. Transistor circuits.
`TK7871.9A45
`1994
`621.381’528—dc20
`
`1. Title
`1
`(93—50682
`
`1
`
`1?
`
`SEPl 21994
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`Printed in England by Clays Ltd, St Ives pf -
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`British Library Cataloguing in Publication Data
`Amos, S.W.
`'
`'
`P'
`'1
`it
`'t
`‘
`'t.—8th d.
`771 78 7/ .
`1.9333132; 23311181:r m" S
`e
`2. Electronic circuit design
`,
`it} 2
`I. Title
`,
`621.3815’30422
`/ C; 9175
`ISBN 0 7506 1999 6
`Library of Congress Cataloguing in Publication Data
`Amos, S.W. (Stanley William)
`Principles of transistor circuits/S.W. Am .
`.
`
`2
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`"
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`M » agflérié
`
`Contents
`
`/
`
`'
`
`;
`
`l
`
`Preface to the Eighth Edition
`1 Semiconductors and Junction Diodes
`'
`2 Basic Principles ofTransistors
`3 Common—base and COmmon-gate Amplifiers
`4 Common-emitter and Common—source Amplifiers
`5 Common-collector and Common-drain Amplifiers
`(Emitter and Source 'Followers)
`/
`_
`,»
`6 Bias and D.C. Stabilisation
`‘
`7 Small-signal A.F. Amplifiers
`8 Large-signal AF. Aniplifiers
`9 DC. and Pulse Amplifiers
`10 R.F. and LP. Amplifiers
`"
`11 Sinusoidal Oscillators
`12 Modulators, Demodulators, Mixers and Receivers
`13 Pulse Generators
`'
`,
`14 Sawtooth Generators
`‘
`15 Digital Circuits
`16 Further Applications of Transistors and other
`Semiconductor Devices "
`
`’
`
`*
`
`,'
`
`‘
`
`‘
`
`'
`
`vi
`1
`23
`53
`65
`
`77
`89
`109
`130
`154
`176
`201
`219
`247
`272
`285
`
`321
`
`‘1
`’1'
`
`361
`374
`380
`383
`
`389
`
`Appendix A The Manufacture of Transistors and
`Integrated Circuits
`Appendix B Transistor Parameters
`Appendix C The Stability of a Transistor Tuned Amplifier
`Appendix D Semiconductor Letter Symbols
`
`Index
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`APPENDIX D
`
`.
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`;
`
`Semiconductor Letter Symbols
`
`
`
`Bipolar
`
`input capacitance (common--base, common-
`
`cob, cm, ceh Interlterminal capacitance (collector-to-base, collector-
`to-emitter, emitter—to-base).
`cibwcin, Open-c-ircuit
`input capacitance (common-b—ase, common-
`emitter).
`011,510m, Short-circuit
`emitter).
`cm, com/Open-circuit output capacitance (common-base, common-
`emitter).
`Cobsicoes
`Short—circuit output capacitance (common—base, common-
`emitter).
`c,b5,cm Short-circuit reverse transfer capacitance (common--base,
`common--emitter).
`cm, C.e Depletion-layer capacitance (collector, emitter).
`fhfb, hfe Small-signal short-circuitforward current transfer ratio cut-off
`frequency (common-base, common-emitter).
`fm“ Maximum frequency of oscillation.
`f-r Transition frequency or frequency at which small-signal forward
`current transfer ratio (common--emitter) extrapolates to unity.
`f1 Frequency of unity current transfer ratio.
`gm, gpE Large-signal insertion power gain (common--base, common-
`emitter)
`\
`gpb, gpe Small-signal insertion power gain (common-base, common-
`emitter)
`\
`‘
`9113a gTE Large-signal transducer power gain (common-base, common—
`emitter)
`gw, g.e Small—signal transducer power gain (common-base, common-
`emitter).
`
`383
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`384
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`Principles of Transistor Circuits
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`input
`
`impedance (common-base,
`
`. hm, hm Static forward current transfer ratio (common-base, common-
`emitter).
`7
`hm, hf, Small-signal short-circuit forward current transfer ratio (com-
`mon-base, common-emitter).
`hunkie Small-signal short-circuit
`common--emitter).
`hiafimag) or Im(hie) Imaginary part of the small-signal short-circuit input
`impedance (common-emitter).
`hmml, or Re(h,e) Real part of the small--signal short-circuit input
`impedance (common-emitter).
`hob, hoe Small--signal open--circuit output admittance (common-base,
`common-emitter). ‘
`howmag, or Im(h0e) Imaginary part of the small-signal open-circuit
`output admittance (common—emitter).
`howeal) or Re(h°c) Real part of the small-signal open-circuit output
`admittance (common-emitter).
`hm hre Small-signal open-circuit reverse voltage transfer ratio (com-
`mon-base, common-emitter),
`13, IC, IE Current, d.c. (base-terminal, collector-terminal, emitter-
`terminal).
`r.m.s. value of alternating component
`Ib, 1c,
`Ie Current,
`terminal, collector-terminal, emitter-terminal).
`in, ic, iE Current, instantaneous total value (base-terminal, collector-
`terminal, emitter-terminal)
`I135v Base cut-ofl‘ current, d.c.
`ICEO Collector cut-ofl current, d.c., emitter open.
`151520,“, Emitter cut-off current.
`'
`I1:130 Emitter cut-off current, d.c., collector open.
`155m) Emitter-collector offset current.
`IEcs Emitter cut-ofl current, (1.c., base-short-circuited to collector.
`Pm, PIE Large—signal input power (common-base, common-emitter).
`Pib, Pie Small-signal input power (common-base, common-emitter).
`P05, P0E Large—signal output power (common-base, common-emit-
`ter).
`Pub, PSmall-signal output power (common-base, common—emitter).
`PT Total non-reactive power input to all terminals.
`'
`Pm, max Maximum total dissipation.
`rb’Cc Collector-base time constant.
`ream.) Saturation resistance, collector-to-emitter.
`Re(yie)
`Rama)
`rele2(on) Small-signal emitter-emitter on—state resistance.
`R9 Thermal resistance.
`Tamb Ambient temperature.
`
`(base-
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`;
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`Appendix D
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`385
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`Tj Junction temperature.
`td Delay time.
`tf Fall time.
`toff Turn-off time.
`ton Turn—on time.
`tp Pulse time.
`tr Rise time.
`ts Storage time.
`w Pulse average time.
`Van: Vco VEE Supply voltage, d.c. (base, collector, emitter).
`Vac: VEE, VCR, ch VEB, VEC Voltage, d.c. or average (base-to-
`collector, base-to~emitter, collector-to-base, collector-to-emitter, emit-
`ter-to-base, emitter-to-collector).
`vbc, vbe, vcb, vce, veb, vec Voltage, instantaneous value of alternating
`component (base-to-collector, base-to~emitter, collector-to-base, col—
`lector-to-emitter, emitter-to—base, emitter-to-collector).
`mecm (formerly BVCBO) Breakdown voltage, collector-to-base,
`emitter open.
`.
`VRT Reach-through (punch-through) voltage.
`yrb, yfe Small-signal short-circuit forward-transfer admittance (com-
`mon-base, common-emitter).
`ya» yin Small-signal short-circuit input admittance (common-base,
`common-emitter).
`ywmag) or Im(yie) Imaginary part of the small-signal short-circuit input
`admittance (common--emitter-).
`yie(real) or Re(yic) Real part of the small-signal short-circuit input
`admittanCe (common-emitter).
`y°5,Y Small—signal short-circuit output admittance (common-base,
`common-emitter).
`yoeflmg, or Im(y0e) Imaginary part of the small-signal short—circuit
`output admittance (commonemitter).
`,
`yoefieal) or Re(yoc) Real part of the small-signal short-circuit output
`admittance (common--emitter).
`y,,,, yre Small—signal short-circuit reverse transfer admittance (com-
`mon--base common-emitt/er).
`
`Unijuuction
`
`\
`
`l
`
`11 Intrinsic stand-ofl‘ratio.
`1320mm) Interbase modulated current.
`IEBZO Emitter reverse current.
`Ip Peak-point current.
`Iv Valley-point current.
`rBB Interbase resistance.
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`386
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`Principles of Transistor Circuits
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`Tj Junction temperature.
`tp Pulse time.
`tw Pulse average time.
`V13281 Interbase voltage.
`VIEWS,” Emitter saturation voltage.
`Von, Base-1 peak voltage.
`Vp Peak-point voltage.
`VV Valley-point voltage.
`
`Field Efl'ect
`
`bfs, bis, bog, brs Common-source small-signal (forward transfer, input,
`output, reverse transfer) susceptance.
`c s Drain-source capacitance.
`cm, Drain-substrate capacitance.
`0,5, Short-circuit input capacitance, common-source.
`c0ss Short-circuit output capacitance, common-source.
`crss Short-circuit reverse transfer capacitance, common—source.
`F or F Noise figure, average or spot.
`gfs, gis, gas, gIS Signal (forward transfer, input, output, reverse transfer)
`conductance.
`
`/
`
`"
`
`gm Transconductance.
`gpg, gp5 Small-signal insertion power gain (common-gate, common-
`source).
`g,g,,g,5 Small-signal transducer power gain (common-gate, common-
`source)T
`l
`ISM” Drain cut-off current.
`2.4%“) On—state drain current.
`IDss Zero-gate-voltage drain current
`IG Gate current, (1.C.
`IGF Forward gate current.
`[GR Reverse gate current;
`IG55 Reverse gate current, drain short-circuited to source.
`IGS“ Forward gate current, drain short-circuited to source.
`I655“ Reverse gate current, drain short-circuited to source.
`In Noise current, equivalent input.
`Im(yrs)r Im(yis): 11110105): 11110)“)-
`15 Source current, d.c.
`\ 15‘0“) Source cut-off current.
`1SDS Zero--gate—voltage source current.
`rdsm, Small-signal drain-source on--state resistance.
`"Dsmm Static drain--source on-~state resistance.
`tum, Turn--on delay time.
`tf Fall time.
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`Appendix D
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`387
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`-
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`ton Turn—oi? time.
`ton Turn-on time.
`tp Pulse time.
`t, Rise time.
`tw Pulse average time.
`megss Gate~source breakdown voltage.
`VmeSSF Forward gate-source breakdown voltage.
`meGSSR Reverse gate—source breakdown voltage.
`VDD, VGG, VSS Supply voltage, d.c. (drain, gate, source).
`VDG Drain-gate voltage.
`VDs Drain-source voltage.
`Vnsmnj Drain—source on-state voltage.
`VDU Drain-substrate voltage.
`VGS Gate-source voltage.
`V55F Forward gate-source voltage.
`VGSR Reverse gate-source voltage.
`Vasmm Gate-source cut-off voltage.
`VGSM, gate—source threshold voltage.
`ch Gate-substrate voltage.
`_
`Vn Noise voltage equivalent input.
`VSU Source-substrate voltage.
`yf5 Common-source small-signal short-circuit forward transfer admit-
`tance.
`.
`yis Common—source small-signal short—circuit input admittance.
`ycs Common-source small-signal short-circuit admittance.
`
`Diodes
`
`Diss Dissipation, watts.
`CT Barrier-layer capacitance.
`IF Forward current.
`Imm Average forward current.
`Ima Repetitive peak forward current.
`IFM Peak forward current.
`IFSM Surge (non-repetitive) forward current.
`IG Gate current.
`IGT Gate trigger current.
`I0 Continuous average forward current (in half-wave rectification).
`IR Reverse current.
`,
`IZ Max. current in breakdown region (Zener diodes).
`TK Temperature coefficient of Zener voltage.
`UF Forward voltage.
`'
`UR Blocking (inverse) voltage.
`Um Peak blocking voltage.
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`388
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`Principles of Transistor Circuits
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`Uz Breakdown voltage (Zener diodes).
`VF Forward voltage.
`V,RM Input repetitive peak voltage.
`VZ Breakdown voltage (Zener diodes).
`
`N.B. U and V are generally interchangeable.
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