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`UNITED STATES PATENT AND TRADEMARK OFFICE
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`BEFORE THE PATENT TRIAL AND APPEAL BOARD
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`ADVANCED MICRO DEVICES, INC.
`Petitioner
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`v.
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`AQUILA INNOVATIONS, INC.
`Patent Owner
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`Case IPR2019-1525
`Patent 6,239,614 B1
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`DECLARATION OF DOUGLAS R. HOLBERG PH.D.
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`Mail Stop “PATENT BOARD”
`Patent Trial and Appeal Board
`U.S. Patent & Trademark Office
`P.O. Box 1450
`Alexandria, VA 22313-1450
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`IPR2019-1525
`U.S. Patent No. 6,239,614 B1
`TABLE OF CONTENTS
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`I.
`
`II.
`
`BACKGROUND ........................................................................................ - 1 -
`
`QUALIFICATIONS AND EXPERTISE ................................................... - 6 -
`
`III. LEGAL UNDERSTANDING .................................................................... - 9 -
`
`A. My Understanding of Claim Construction ....................................... - 9 -
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`B.
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`A Person Having Ordinary Skill in the Art .................................... - 12 -
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`C. My Understanding of Obviousness ................................................ - 13 -
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`IV. The ’614 Patent ......................................................................................... - 15 -
`
`A.
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`Technical Background .................................................................... - 15 -
`
`i.
`
`Using MTCMOS gate array in a semiconductor
`integrated circuit for low power consumption and
`reduced leakage current was well-known ............................ - 15 -
`
`ii.
`
`IC layout design was well-known ........................................ - 20 -
`
`iii. Using MOSFETs in IC as decoupling capacitors was
`well-known ........................................................................... - 23 -
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`B.
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`C.
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`D.
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`The Alleged Problem in the Prior Art ............................................ - 27 -
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`The Alleged Invention of the ’614 Patent ...................................... - 27 -
`
`Summary of the Prosecution History ............................................. - 32 -
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`V.
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`Claim Construction ................................................................................... - 33 -
`
`A.
`
`B.
`
`“unit cells” ...................................................................................... - 35 -
`
`“a unit cell array comprised of said first and second unit
`cells laid in array form” .................................................................. - 43 -
`
`C.
`
`“a power switch” ............................................................................ - 46 -
`
`i
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`IPR2019-1525
`U.S. Patent No. 6,239,614 B1
`“a power switch disposed around said unit cell array and
`comprised of a plurality of third MOS transistors” ........................ - 50 -
`
`“a plurality of input/output circuits disposed around said unit
`cell array” ....................................................................................... - 54 -
`
`“parts of said power switch are disposed within said unit cell
`array” .............................................................................................. - 57 -
`
`D.
`
`E.
`
`F.
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`VI. GROUND 1: CLAIMS 1-3 ARE OBVIOUS OVER URANO IN
`VIEW OF Mutoh021 ................................................................................ - 59 -
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`A. Overview of Urano ......................................................................... - 59 -
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`B.
`
`Overview of Mutoh021 .................................................................. - 61 -
`
`C. Motivation to Combine Urano and Mutoh021 ............................... - 63 -
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`D.
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`Claim 1 is obvious over Urano in view of Mutoh021. ................... - 72 -
`
`i.
`
`ii.
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` Urano discloses the preamble of claim 1 ............................ - 72 -
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` Urano discloses the first unit cells limitation of claim
`1 ............................................................................................ - 73 -
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`iii. Urano discloses the second unit cells limitation of
`claim 1 .................................................................................. - 76 -
`
`iv. Urano discloses the unit cell array limitation of claim
`1 ............................................................................................ - 78 -
`
`v.
`
`vi.
`
`The combination of Urano and Mutoh021 discloses
`the power switch limitation of claim 1 ................................ - 80 -
`
` The combination of Urano and Mutoh021 discloses
`the input/output limitation of claim 1 .................................. - 84 -
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`E.
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`F.
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`Claim 2 is obvious over Urano in view of Mutoh021. ................... - 86 -
`
`Claim 3 is obvious over Urano in view of Mutoh021. ................... - 87 -
`
`ii
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`IPR2019-1525
`U.S. Patent No. 6,239,614 B1
`VII. GROUND 2: CLAIMS 1-3 ARE OBVIOUS OVER MUTOH IN
`VIEW OF MUTOH021 ............................................................................ - 89 -
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`A. Overview of Mutoh ........................................................................ - 89 -
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`B. Motivation to Combine Mutoh and Mutoh021 .............................. - 91 -
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`C.
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`Claim 1 is obvious over Mutoh in view of Mutoh021. .................. - 96 -
`
`i.
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`Mutoh discloses the preamble of claim 1 ............................ - 96 -
`
`ii. Mutoh discloses the first unit cells limitation of claim
`1 under the Patent Owner’s alternative claim
`construction .......................................................................... - 97 -
`
`iii. Mutoh discloses the second unit cells limitation of
`claim 1 under the Patent Owner’s alternative claim
`construction ........................................................................ - 100 -
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`iv. Mutoh discloses the unit cell array limitation of claim
`1 under the Patent Owner’s alternative claim
`construction ........................................................................ - 101 -
`
`v.
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`vi.
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`The combination of Mutoh and Mutoh021 discloses
`the power switch limitation of claim 1 under the
`Patent Owner’s alternative claim construction .................. - 103 -
`
`The combination of Mutoh and Mutoh021 discloses
`the input/output limitation of claim 1 under the Patent
`Owner’s alternative claim construction ............................. - 105 -
`
`A.
`
`B.
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`Claim 2 is obvious over Mutoh in view of Mutoh021. ................ - 108 -
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`Claim 3 is obvious over Mutoh in view of Mutoh021 under
`the Patent Owner’s alternative claim construction ...................... - 109 -
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`VIII. GROUND 3: CLAIMS 4-5 ARE OBVIOUS OVER DOUSEKI IN
`VIEW OF RAMUS................................................................................. - 110 -
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`A. Overview of Douseki.................................................................... - 110 -
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`iii
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`IPR2019-1525
`U.S. Patent No. 6,239,614 B1
`Overview of Ramus ...................................................................... - 112 -
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`B.
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`C. Motivation to Combine Douseki and Ramus ............................... - 113 -
`
`D.
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`Claim 4 is obvious over Douseki in view of Ramus. ................... - 116 -
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`i.
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`ii.
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`Douseki discloses the preamble of claim 4 ........................ - 116 -
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` Douseki discloses the power supply lines limitation
`of claim 4 ........................................................................... - 116 -
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`iii. Douseki discloses the virtual power supply lines
`limitation of claim 4 ........................................................... - 118 -
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`iv.
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`v.
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` Douseki discloses the latch circuit limitation of claim
`4 .......................................................................................... - 119 -
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` Douseki discloses the logic circuit limitation of claim
`4 .......................................................................................... - 120 -
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`vi.
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` Douseki discloses the capacitor limitations of claim 4 ..... - 123 -
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`vii. The combination of Douseki and Ramus discloses the
`wherein limitation of claim 4 ............................................. - 124 -
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`A.
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`Claim 5 is obvious over Douseki in view of Ramus. ................... - 127 -
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`IX. CONCLUSION ....................................................................................... - 131 -
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`iv
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`
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`I, Douglas R. Holberg, declare as follows:
`
`I.
`
`BACKGROUND
`
`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
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`1.
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`I have been retained by Sterne, Kessler, Goldstein, & Fox, P.L.L.C.,
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`(“SKGF”) which represents Advanced Micro Devices, Inc. (“AMD”; “Petitioner”)
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`in connection with the above-captioned inter partes review of U.S. Patent No.
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`6,239,614 to Morikawa, titled Semiconductor Integrated Circuit Device, EX1001,
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`“’614 patent.” I understand that the ’614 patent is currently assigned to Aquila
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`Innovations, Inc. (“Aquila”).
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`2.
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`I have reviewed and am familiar with the ’614 patent, which issued to
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`Oki Electric Industry Co. Ltd. on May 29, 2001. I understand that the ’614 patent
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`includes seven claims, and that claims 1 and 4 are the independent claims. I also
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`understand that the Petition for inter partes review that accompanies this
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`Declaration seeks to cancel claims 1-5 (“challenged claims”) of the ’614 patent.
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`Thus, my analysis and opinions will focus on claims 1-5 of the ’614 patent. In this
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`Declaration, I will cite to the specification of the ’614 patent using the following
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`format: EX1001, 1:1-10. This example citation points to the ’614 patent
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`specification at column 1, lines 1-10.
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`I have reviewed and am familiar with the following documents:
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`3.
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`
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`- 1 -
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`
`
`Exhibit
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`1001
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`1002
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`1004
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`1005
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`1006
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`1007
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`1008
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`1009
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`1010
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`1011
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`1012
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`1013
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`1014
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`1015
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`1016
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`1017
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`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`DESCRIPTION
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`U.S. Patent No. 6,239,614 to Morikawa (“’614 patent”)
`
`Prosecution History of U.S. Patent No. 6,239,614 (“’614
`Prosecution History”)
`
`Dr. Holberg’s Curriculum Vitae
`
`Mutoh et al., “1-V Power Supply High-Speed Digital Circuit
`Technology with Multithreshold-Voltage CMOS,” IEEE Journal
`of Solid-State Circuits, Vol. 30, No. 8, 847-854 (1995) (“Mutoh”)
`
`U.S. Patent No. 6,653,693 to Makino (“Makino”)
`
`Japanese Patent Publication No. H10-125878 to Masami Urano
`(“Urano”)
`
`English translation of Urano
`
`Translation Certificate of Urano
`
`U.S. Patent No. 5,486,774 to Douseki et al. (“Douseki”)
`
`U.S. Patent No. 5,631,492 to Ramus et al. (“Ramus”)
`
`Japanese Patent Publication No. H08-18021 to Shin’ichiro Mutoh
`et al. (“Mutoh021”)
`
`English translation of Mutoh021
`
`Translation Certificate of Mutoh021
`
`Declaration of Dr. Holberg in Support of District Court Case No.
`1:18-cv-00554-LY (“Holberg Dec. 2”)
`
`Saigo et al., “A 20 K-Gate CMOS Gate Array,” IEEE Journal of
`Solid State Circuits, Vol. SC-18, No. 5, 578-584 (1983)
`
`Sato et al., “A Subnanosecond 2000 Gate Array with ECL 10OK
`Compatibility,” Vol. ED-31, No. 2, 139-143 (1984)
`
`- 2 -
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`
`
`Exhibit
`
`1018
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`1019
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`1020
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`1021
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`1022
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`1023
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`1024
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`1025
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`1026
`
`1027
`
`1028
`
`1029
`
`1030
`
`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`DESCRIPTION
`
`Massetti et al., “A CMOS-Based Mixed Analog-Logic Standard
`Cell Product Family,” IEEE 1988 Custom Integrated Circuits
`Conference, 24.1.1 (1988)
`
`Horowitz et al., “Chapter 2: Transitors,” The Art of Electronics,
`2d Edition, Cambridge University Press (1989)
`
`U.S. Patent No. 4,001,869 to Brown (“Brown”)
`
`U.S. Patent No. 4,499,387 to Konishi (“Konishi”)
`
`U.S. Patent No. 5,544,102 to Tobita et al. (“Tobita”)
`
`U.S. Patent No. 6,285,052 to Draper (“Draper”)
`
`U.S. Patent No. 6,292,015 to Ooishi et al. (“Ooishi”)
`
`Baker et al., “CMOS Circuit Design, Layout, and Simulation”
`Institute of Electrical and Electronics Engineers, Inc. (1998)
`
`Sato et al., “A Subnanosecond 2000 Gate Array with ECL 100K
`Compatibility,” IEEE Journal of Solid-State Circuits, Vol. SC-19,
`No. 1, 5-9 (1984)
`
`Smith et al., “A CMOS-Based Analog Standard Cell Product
`Family,” IEEE Journal of Solid-State Circuits, Vol. 24, No. 2,
`370-379 (1989)
`
`U.S. Patent No. 6,340,825 to Shibata (“Shibata”)
`
`Scheduling Order, Aquila Innovations, Inc. v. Advanced Micro
`Devices, Inc., Case No. 1:18-cv-00554-LY (W.D. Tex.), issued
`January 18, 2019
`
`Order Granting Unopposed Motion to Extend Claim Construction
`Deadlines, Aquila Innovations, Inc. v. Advanced Micro Devices,
`Inc., Case No. 1:18-cv-00554-LY (W.D. Tex.), issued May 14,
`2019
`
`- 3 -
`
`
`
`Exhibit
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`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`DESCRIPTION
`
`1031
`
`1032
`
`1033
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`1034
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`1035
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`1036
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`1037
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`1038
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`1039
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`1040
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`1041
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`1042
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`1043
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`1044
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`1045
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`1046
`
`Webster’s Third New International Dictionary (2002)
`
`U.S. Patent No. 4,937,649 to Shiba et al. (“Shiba”)
`
`U.S. Patent No. 6,459,331 to Takeuchi et al. (“Takeuchi”)
`
`Weste, Neil H. E. et al., Principles of CMOS VLSI Design (2d ed.
`1993) (“Weste”)
`
`Laplante, P.A., Comprehensive Dictionary of Electrical
`Engineering (CRC Press 1999) (“Laplante”)
`
`Graf, R.F., Modern Dictionary of Electronics (7th ed. 1999)
`(“Graf”)
`
`Merriam-Webster’s Collegiate Dictionary (10th ed. 2001)
`
`Cabe, Adam and Shamik Das, “Performance Simulation and
`Analysis of a CMOS/Nano Hybrid Nanoprocessor System,”
`Nanotechnology, Vol. 20, No. 16, 22 (Apr. 2009) (“Cabe and
`Das”)
`
`U.S. Patent No. 5,781,062 to Mashiko et al. (“Mashiko”)
`
`U.S. Patent No. 5,933,384 to Terada et al. (“Terada”)
`
`U.S. Patent No. 6,034,563 to Mashiko (“Mashiko1996”)
`
`U.S. Patent No. 6,046,627 to Itoh et al. (“Itoh”)
`
`U.S. Patent No. 6,111,427 to Fujii et al. (“Fujii”)
`
`U.S. Patent No. 6,119,250 to Nishimura et al. (“Nishimura”)
`
`U.S. Patent No. 6,140,836 to Fujii et al. (“Fujii1998”)
`
`U.S. Patent No. 6,211,725 to Kang (“Kang”)
`
`- 4 -
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`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`The ’614 patent is generally directed to “a semiconductor integrated
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`4.
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`circuit device including MOS transistors, which is capable of operating at a low
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`power supply voltage when taken active and reducing power consumption resultant
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`from a leakage current during standby.” EX1001, 1:7-12. The ’614 patent also
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`relates to implementation of a “layout of a semiconductor integrated circuit device
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`by a gate array system, thereby shortening a manufacturing period thereof as
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`compared with the conventional standard cell system.” Id., 2:3-7. I am familiar
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`with the technology described in the ’614 patent both as of its earliest possible
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`priority date (January 14, 1999) and its actual filing date (April 1, 1999).
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`5.
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`I have been asked to consider how a person of ordinary skill in the art
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`(“POSA”) would have understood the claims subject to inter partes review in light
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`of the disclosure of the ’614 patent. I have also been asked to consider how a
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`POSA would have understood the applied Urano, Mutoh, Mutoh021, Douseki, and
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`Ramus prior art. Further, I have been asked to consider and provide my technical
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`review, analysis, insights, and opinions regarding whether a POSA would have
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`understood: the disclosure of Urano in combination with Mutoh021 to render
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`claims 1-3 obvious; the disclosure of Mutoh in combination with Mutoh021 to
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`render claims 1-3 obvious; and the disclosure of Douseki in combination with
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`Ramus to render claims 4-5 obvious.
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`- 5 -
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`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`I am being compensated at my standard hourly rate of $400 dollars
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`6.
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`per hour. My compensation is not dependent on the outcome of this inter partes
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`review and in no way affects the substance of my statements in this declaration.
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`II. QUALIFICATIONS AND EXPERTISE
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`7.
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`In formulating my opinions, I have relied upon my knowledge,
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`training, and experience in the relevant art. My qualifications are stated more fully
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`in my curriculum vitae, which has been provided as Exhibit 1004. Here, I provide a
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`brief summary of my qualifications.
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`8.
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`My education includes a B.S. in Electrical Engineering from Texas
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`A&M University in 1977, followed by a M.S. in Electrical Engineering from the
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`University of Texas in 1989. I earned a Ph.D. in Electrical Engineering from the
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`University of Texas in 1992.
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`9.
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`My qualifications are stated more fully in my curriculum vitae. See
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`EX1004. As reflected in my curriculum vitae (and as explained in more detail
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`below), I have experience with the technology described in the ’614 Patent,
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`including resistors, capacitors, inductors, transistors, transformers, oscillators,
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`operational amplifiers, comparators, CMOS integrated-circuit technology,
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`analog/digital mixed-signal circuits, floor-planning and layout of CMOS integrated
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`circuits, standard cells, custom cells, gate arrays, I/O cells, embedded flash, and
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`- 6 -
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`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`tools used to design, construct, and verify integrated circuits (CAD tools). The
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`following paragraphs provide a brief summary of my qualifications.
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`10.
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`I have over 40 years of experience in the electronics field. During
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`that time, I have worked for several different electronics companies including:
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`Mostek, Texas Micro Engineering (acquired by Crystal Semiconductor), Crystal
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`Semiconductor, Cirrus Logic, Cygnal Integrated Products, and Silicon
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`Laboratories. I joined Silicon Laboratories when they acquired Cygnal, which I co-
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`founded in 1999. I am a named inventor on 39 U.S. granted patents. I have held a
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`variety of engineering positions throughout my career, from circuit designer,
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`design manager, Director of Engineering, Chief Technical Officer, V.P. of
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`Engineering, and V.P. of Technology. In addition to my engineering experience, I
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`also have served as an adjunct faculty member at the University of Texas, where I
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`taught CMOS analog and mixed-signal design for six years, and I have taught a
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`number of short courses in Germany and Ireland.
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`11.
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`I earned the BSEE degree from Texas A&M University, the MSE
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`and Ph.D. degrees from The University of Texas at Austin. A complete listing of
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`my qualifications including a list of my patents is found in Exhibit 1004.
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`12. Upon graduation from Texas A&M, I went to work for Mostek
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`Corporation designing integrated circuits for telecommunications applications. I
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`designed an integrated DTMF tone generator which was my first patented
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`- 7 -
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`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`invention. I also designed telephone ringer circuits and two-to-four-wire converters
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`for central-office applications. After leaving Mostek, I joined a startup company,
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`Texas Micro Engineering, as employee #2, where I designed, among other things,
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`a dual-channel (atrium-ventricle) pacemaker sense amplifier/filter using discrete-
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`time switched capacitor technology, co-designed a gate-array that was used to
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`implement an insulin-pump controller, and a metronome. While enrolled in the
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`Masters/Ph.D. program at The University of Texas at Austin, I worked on the
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`application of bipolar technology to DRAM sense-amplifier architectures and
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`circuit-simulation algorithms. I also designed and laid out the mask set (The
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`Holberg Mask Set) used by the fabrication class/lab for many years. Upon
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`graduating with a Ph.D., I went to work for Crystal Semiconductor/Cirrus Logic
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`where I designed high frequency synthesizers for hard-disk read-channel
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`applications. I managed a group designing CCD interface circuits for digital
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`camera applications as well as television encoder chips and CMOS imagers. Upon
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`leaving Cirrus, I started a company developing mixed-signal microcontrollers. I
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`was a founder/CTO/VP Engineering, as well as an individual contributor. While at
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`Cygnal, I designed A/D converters, ∆Vbe temperature sensors, I/O cells/pads (both
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`design and layout) as well as many additional miscellaneous circuits. My company
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`was purchased by Silicon Labs where I remained employed as a manager of the
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`microcontroller group, followed by the position, VP of Technology.
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`- 8 -
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`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`In 2008, I began a consulting career in the area of patents and
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`13.
`
`intellectual property. I have supported my clients in patent prosecution, licensing,
`
`and litigation in a variety of technologies, including analog/digital mixed signal
`
`circuits, RF circuits, oscillators, PLLs, A/D, D/A converters, switch-mode power
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`supplies, motor drivers, and a variety of inventions from the circuit-level to system
`
`level. Based on my experience, both professional and educational, I believe I am
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`more than qualified to give the opinions expressed herein.
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`14.
`
`I am the co-author of the book “CMOS Analog Circuit Design”
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`which was published in first edition in 1987. It is now in third edition and
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`published in English and Chinese—a text widely used throughout the world.
`
`III. LEGAL UNDERSTANDING
`
`15.
`
`I am not an attorney and will not offer opinions on the law. I have
`
`been informed by counsel for AMD, however, of several principles that I have
`
`used in arriving at my stated conclusions in this report.
`
`A. My Understanding of Claim Construction
`
`16.
`
`I have been advised and understand that “claim construction” is the
`
`process of determining a patent claim’s meaning. I also understand that, during an
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`inter partes review, a claim construction analysis begins with the plain meaning of
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`the claim term, which is the ordinary and customary meaning given to the term by
`
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`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`those of ordinary skill in the art at the time of the invention. I also understand that
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`this standard is sometimes referred to as the Phillips standard.
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`17.
`
`I have been informed and understand that there is a presumption that
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`claim terms carry their accustomed meaning among persons of ordinary skill in the
`
`art. I have also been informed that the ordinary and customary meaning of a claim
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`term may be determined by reviewing a variety of sources, including the claims
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`themselves, the specification (or “written description”) of a patent, its prosecution
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`history, and dictionaries and treatises.
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`18.
`
`I have been informed and understand that the language of a patent
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`claim must be interpreted in light of the patent’s claims, specification, and
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`prosecution history, as well as other evidence extrinsic to the patent. More
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`specifically, I understand that claim terms should be given their plain and ordinary
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`meaning as understood by a person of ordinary skill in the art as of the effective
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`filing date of the patent application (i.e., the day the application that led to the
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`patent was filed), unless the claims, specification, or prosecution history indicate
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`that a special meaning was intended.
`
`19. More specifically, I understand that, for claim construction, one must
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`focus on the claim terms in the context of the claim as a whole, interpreting the
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`claim language as it ordinarily would be understood by a person skilled in the art at
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`the time of the invention. I understand that the context of the surrounding words of
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`IPR2019-01525
`U.S. Patent No. 6,239,614 B1
`the claim also must be considered in determining the ordinary and customary
`
`meaning of those terms.
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`20. After the claim language, I understand that the most important
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`sources to consider are the patent specification, including any publications
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`incorporated by reference in the specification, and the prosecution history. I
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`understand that, collectively, these sources (the claim language, specification, and
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`prosecution history) are called “intrinsic evidence.”
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`21. With respect to technical references and other information (called
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`“extrinsic evidence”) that would have been available at the time when the patent’s
`
`application was filed, I understand that the law considers extrinsic evidence to be
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`less reliable than intrinsic evidence, and that extrinsic evidence should not be used
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`to change the ordinary meaning of the claim language.
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`22.
`
`It is my understanding that a patentee may also act as his own
`
`lexicographer and provide definitions in the specification or prosecution history.
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`For example, an inventor may clearly set forth a definition of the claim term in
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`either the specification or prosecution history that is different from the term’s
`
`ordinary meaning. I understand that actions taken by the patent owner can affect
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`the constructions of the claim terms. For instance, there may also be a clear
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`disavowal of claim coverage in the specification or prosecution history.
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`U.S. Patent No. 6,239,614 B1
`I understand that, if a patentee makes a clear and unambiguous
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`23.
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`disavowal of claim scope during prosecution, such a disclaimer informs the claim
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`construction analysis by narrowing the ordinary and customary meaning of the
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`claim consistent with the scope of the surrender. I further understand that such a
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`disavowal of claim scope must be clear and unambiguous.
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`24. Unless otherwise noted, I have applied the plain meaning of the claim
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`language for each of the claims discussed.
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`25. My opinions on validity are based on the information available to me
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`as of the date of this expert report. In addition, however, I respectfully reserve the
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`right to supplement this expert report as may be necessary or appropriate based on
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`the discovery of additional information relevant to the opinions set forth herein,
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`such as test results produced by Respondents.
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`B. A Person Having Ordinary Skill in the Art
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`26.
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`I have been advised and understand that a POSA is presumed to be
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`aware of all pertinent art, thinks along conventional wisdom in the art, and is a
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`person of ordinary creativity, not an automaton. With this understanding, a POSA
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`at the time of the invention claimed in the ’614 patent, is a person holding a
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`Bachelor of Science degree in Electrical Engineering or an equivalent field as well
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`as at least 3-5 years of academic or industry experience in semiconductor
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`integrated circuit filed, or comparable industry experience.
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`C. My Understanding of Obviousness
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`U.S. Patent No. 6,239,614 B1
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`27.
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`I have been advised and understand that a claimed invention is
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`unpatentable if the differences between the invention and the prior art are such that
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`the subject matter as a whole would have been obvious at the time the invention
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`was made to a POSA to which the subject matter pertains. This means that even if
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`all of the requirements of the claim cannot be found in a single prior art reference
`
`that would anticipate the claim, the claim can still be invalid.
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`28.
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`It is my understanding that obviousness is a question of law based on
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`underlying factual findings: (1) the scope and content of the prior art; (2) the
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`differences between the claims and the prior art; (3) the level of skill in the art; and
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`(4) objective considerations of nonobviousness. I understand that for a single
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`reference or a combination of references to render the claimed invention obvious, a
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`POSA must have been able to arrive at the claims by altering or combining the
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`applied references.
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`29.
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`I also understand that prior art references can be combined under
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`several different circumstances. For example, it is my understanding that one such
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`circumstance is when a proposed combination of prior art references results in a
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`system that represents a predictable variation, which is achieved using prior art
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`elements according to their established functions.
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`U.S. Patent No. 6,239,614 B1
`I also understand that when considering the obviousness of a patent
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`30.
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`claim, one should consider whether a teaching, suggestion, or motivation to
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`combine the references exists so as to avoid impermissibly applying hindsight
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`when considering the prior art. I understand this test should not be rigidly applied,
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`but that the test can be important to avoiding such hindsight.
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`31.
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`Further, I understand that certain objective indicia can be important
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`evidence regarding whether a patent is obvious or nonobvious. Such indicia
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`include: commercial success of products covered by the patent claims; a long-felt
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`need for the invention; failed attempts by others to make the invention; copying of
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`the invention by others in the field; unexpected results achieved by the invention as
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`compared to the closest prior art; praise of the invention by the infringer or others
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`in the field; the taking of licenses under the patent by others; expressions of
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`surprise by experts and those skilled in the art at the making of the invention; and
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`the patentee proceeded contrary to the accepted wisdom of the prior art. I am not
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`aware of any objective indicia of nonobvious at this time. But, I reserve the right to
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`review and opine on any evidence of objective indicia of nonobvious that Polaris
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`may present during this proceeding.
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`IV. The ’614 Patent
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`A. Technical Background
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`U.S. Patent No. 6,239,614 B1
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`32.
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`The ’614 patent relates to a layout for a semiconductor integrated
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`circuit device including multi-threshold voltage MOS transistors (“MTCMOS”),
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`which is capable of operating at a lower power supply voltage when active and
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`reduced leakage current during standby. EX1001, Abstract, 1:7-12.
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`33.
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`The ’614 patent also relates to the use of MOS decoupling capacitors
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`to reduce voltage variations and time delays in MTCMOS devices. Id., Abstract,
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`4:59-6:9. But these techniques, and the benefits thereof, were known well before
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`the ’614 patent’s earliest possible priority date, which I have been advised is
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`January 14, 1999.
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`i.
`
`Using MTCMOS gate array in a semiconductor integrated
`circuit for low power consumption and reduced leakage
`current was well-known
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`34. As an initial matter, using multi-threshold-voltage complementary
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`metal–oxide–semiconductor (MTCMOS) in a semiconductor integrated circuit
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`operating at a low power supply voltage when active and reduced power
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`consumption resultant from a leakage current during standby was a well-known
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`concept prior to the ’614 patent. Such fact is admitted in the background section of
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`the ’614 patent:
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`U.S. Patent No. 6,239,614 B1
`As high integration of an LSI or an increase in performance thereof
`progresses, how to reduce the power consumption has recently been
`recognized as an important problem. It can be said that in a CMOS
`type LSI in particular, a reduction in the power supply voltage is a
`method most effective for low power consumption, …the reduction
`in the threshold voltage leads to an increase in leakage current of the
`MOS transistor during standby. An MTCMOS (Multithreshold-
`Voltage CMOS) has been proposed as an LSI for solving such a
`problem. The MTCMOS has been introduced in the paper: 1-V
`Power Supply High-Speed Digital Circuit Technology with
`Multithreshold-Voltage CMOS (IEEE JOURNAL OF SOLID-
`STATE CIRCUIT. VOL. 30. NO. 8, AUGUST 1995) or the like,
`for example.
`EX1001, 1:15-32, emphasis added.
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`35.
`
`For example, as stated by Mutoh reference, Exhibit 1005, a paper
`
`described above cited by the ’614 patent, a POSA would have understood that the
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`MTCMOS technique “features both low-threshold voltage and high-threshold
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`voltage MOSFET’s in a single LSI. The low-threshold voltage MOSFET’s
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`enhance speed performance at a low supply voltage of 1 V or less, while the high-
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`threshold voltage MOSFET’s suppress the stand-by leakage current during the
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`sleep period,” EX1005, Abstract, and such MTCMOS can be arranged in “layout
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`schemes based on a standard cell and chip configurations,” Id., Sec. I, paragraph 4.
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`Mutoh was published in the IEEE Journal of Solid-State Circuits, Vol. 30 in
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`U.S. Patent No. 6,239,614 B1
`August 1995, more than a year before the priority date of the ’614 patent. IEEE is
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`a well-known publisher of scientific and technical publications, and a POSA would
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`have been able to locate Mutoh exercising reasonable diligence.
`
`36.
`
`The ’614 patent also explains the basic components of conventional
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`prior art MTCMOS devices, including: “at least one logic circuit electrically
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`connected between a virtual power supply line and a virtual power supply line and
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`comprised of MOS transistors each having a low threshold voltage and standby
`
`power control MOS transistors each having a high threshold voltage, which are
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`electrically connected between a power supply line and the virtual power supply
`
`line and between a ground line and a virtual ground line to reduce the leakage
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`current of each MOS transistor during standby.” EX1001, 1:33-42.
`
`37.
`
`Figure 40 of Urano reproduced below also illustrates an exemplary
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`prior art MTCMOS gate-array device, including: logic circuit 9 connecte