`Claim 20
`IPR2019-01199
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`DOCKET NO.: 0107131-00648US2
`Filed on behalf of Intel Corporation
`By: Yung-Hoon Ha, Reg. No. 56,368
`Theodoros Konstantakopoulos, Reg. No. 74,155
`Taeg Sang Cho, Reg. No. 69,618
`Calvin Walden (pro hac to be requested)
`Wilmer Cutler Pickering Hale and Dorr LLP
`7 World Trade Center
`250 Greenwich Street
`New York, New York 10007
`Email: Yung-Hoon.Ha@wilmerhale.com
` Theodoros.Konstantakopoulos@wilmerhale.com
` Tim.Cho@wilmerhale.com
` Calvin.Walden@wilmerhale.com
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`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________________________________________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________________________________________
`
`Intel Corporation
`Petitioner
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`v.
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`VLSI Technology LLC
`Patent Owner
`___________________________________________
`
`Case IPR2019-01199
`____________________________________________
`PETITION FOR INTER PARTES REVIEW OF
`U.S. PATENT NO. 7,247,552
`CHALLENGING CLAIM 20
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`Petition for Inter Partes Review of U.S. Patent No. 7,247,552
`Claim 20
`IPR2019-01199
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`TABLE OF CONTENTS
`I.
`INTRODUCTION ........................................................................................... 1
`II. MANDATORY NOTICES ............................................................................. 2
`A.
`Real Party-in-Interest ............................................................................ 2
`B.
`Related Matters ...................................................................................... 2
`C.
`Counsel .................................................................................................. 2
`D.
`Service Information ............................................................................... 2
`III. CERTIFICATION OF GROUNDS FOR STANDING .................................. 3
`IV. OVERVIEW OF CHALLENGE AND RELIEF REQUESTED .................... 3
`A.
`Prior Art Patent and Printed Publications ............................................. 3
`B.
`Grounds for Challenge .......................................................................... 5
`V. DISCRETION UNDER 35 U.S.C. §314(A) AND §325(D) ........................... 5
`VI. BRIEF DESCRIPTION OF TECHNOLOGY ................................................ 6
`VII. OVERVIEW OF THE ’552 PATENT ............................................................ 9
`A. Alleged Prior Art Problem .................................................................... 9
`B.
`Alleged Invention ................................................................................ 10
`C.
`Relevant Prosecution History .............................................................. 11
`VIII. OVERVIEW OF THE PRIOR ART ............................................................. 12
`A. Overview of Reddy ............................................................................. 13
`Developing a Circuit Design ..................................................... 15
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`Developing a Layout According to the Circuit Design ............ 15
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` Modifying the Layout ............................................................... 16
`Forming the Integrated Circuit.................................................. 19
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`Overview of Vuong ............................................................................. 20
`B.
`Overview of Kanaoka .......................................................................... 24
`C.
`D. Overview of Weling ............................................................................ 27
`IX. CLAIM CONSTRUCTION .......................................................................... 30
`X.
`LEVEL OF ORDINARY SKILL IN THE ART ........................................... 30
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`Petition for Inter Partes Review of U.S. Patent No. 7,247,552
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`XI. SPECIFIC GROUNDS FOR PETITION ...................................................... 30
`A. Ground I: Claim 20 is Obvious Over Kanaoka in Combination
`with Weling and Reddy. ...................................................................... 31
`Claim 20 .................................................................................... 31
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`Additional Motivations to Combine Kanaoka, Weling,
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`and Reddy ................................................................................. 58
`Ground II: Claim 20 is Obvious Over Kanaoka in Combination
`with Weling and Vuong. ..................................................................... 64
`Claim 20 .................................................................................... 64
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`Additional Motivations to Combine Kanaoka, Weling,
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`and Vuong ................................................................................. 74
`XII. CONCLUSION .............................................................................................. 80
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`B.
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`ii
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`Petition for Inter Partes Review of U.S. Patent No. 7,247,552
`Claim 20
`IPR2019-01199
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`Petitioner Intel Corporation (“Intel”) respectfully requests inter partes
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`review of claim 20 of U.S. Patent No. 7,247,552 (“the ’552 patent”) (Ex. 1101)
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`pursuant to 35 U.S.C. §§ 311-19 and 37 C.F.R. § 42.1 et seq.
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`I.
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`INTRODUCTION
`The ’552 patent addresses a simple problem in integrated circuit (“IC”)
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`manufacturing. To interconnect transistors in an IC, layers that contain both
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`electrically-conductive metals and dielectric/insulating materials are formed over a
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`substrate. Near the top of these layers are small metal regions called “bond pads”
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`that are used to connect the IC to external devices (like a circuit board). During
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`manufacture, however, the layers under the bond pad can be subjected to
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`forces/stresses when external connections are made.
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`Claim 20 of the ’552 patent is directed to a method that purports to address
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`this issue by developing a circuit design and layout for an integrated circuit that
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`contains one or more bond pads, modifying the layout to add “dummy metal lines”
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`to the interconnect layers under the bond pad, and forming the integrated circuit
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`that contains the dummy metal lines. But that basic process was already well-
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`known before the ’552 patent was filed— including as disclosed by the prior art
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`references at issue in this Petition, none of which was before the Patent Office
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`during prosecution.
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`Petition for Inter Partes Review of U.S. Patent No. 7,247,552
`Claim 20
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`Accordingly, claim 20 of the ’552 patent should be held unpatentable.
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`II. MANDATORY NOTICES
`A. Real Party-in-Interest
`Intel Corporation (“Petitioner”) is a real party-in-interest and submits this
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`inter partes review Petition challenging claim 20 of the ’552 patent.
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`B. Related Matters
`VLSI Technology LLC (“Patent Owner”) has asserted the ’552 patent
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`against Intel in VLSI Technology LLC. v. Intel Corporation, No. 18-966-CFC (D.
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`Del.).
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`Petitioner has filed and will file separate inter partes review petitions
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`challenging claims 1, 2, and 11 of the ʼ552 patent.
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`C. Counsel
`Lead Counsel: Yung-Hoon Ha (Registration No. 56,368).
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`Backup Counsel: Theodoros Konstantakopoulos (Registration No. 74,155),
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`Taeg Sang Cho (Registration No. 69,618), Calvin Walden (pro hac vice to be
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`requested).
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`D.
`Service Information
`E-mail:
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`Yung-Hoon.Ha@wilmerhale.com
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`Theodoros.Konstantakopoulos@wilmerhale.com
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`Tim.Cho@wilmerhale.com
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`Petition for Inter Partes Review of U.S. Patent No. 7,247,552
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`Calvin.Walden@wilmerhale.com
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`Post and hand delivery: Wilmer Cutler Pickering Hale and Dorr LLP
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`7 World Trade Center
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`250 Greenwich Street
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`New York, New York 10007
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`Telephone: 212-230-8800
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`Fax: 212-230-8888
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`Petitioner consents to email delivery on lead and backup counsel.
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`III. CERTIFICATION OF GROUNDS FOR STANDING
`Petitioner certifies pursuant to Rule 42.104(a) that the ’552 patent is
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`available for inter partes review and that Petitioner is not barred or estopped from
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`requesting an inter partes review challenging claim 20 on the grounds identified in
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`this Petition.
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`IV. OVERVIEW OF CHALLENGE AND RELIEF REQUESTED
`Pursuant to Rules 42.22(a)(1) and 42.104(b)(1)-(2), Petitioner challenges
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`claim 20 of the ’552 patent.
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`A.
`Prior Art Patent and Printed Publications
`The ’552 patent was filed on January 11, 2005, and does not claim priority
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`to any prior applications. The following prior art references, none of which was
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`considered during prosecution of the ’552 patent, are pertinent to the grounds of
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`unpatentability explained below: 1
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`1.
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`U.S. Patent No. 7,102,223 (“Kanaoka”) (Ex. 1103), which was filed
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`August 5, 2003, and issued September 5, 2006, is prior art under at
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`least 35 U.S.C. § 102(e).
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`2.
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` “Digital Design Flow Options,” Sagar V. Reddy, M.S. Thesis, 2001
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`(“Reddy”) (Ex. 1104), which was made available to the public on
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`April 15, 2002, is prior art under at least 35 U.S.C. §102(b). See
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`Declaration of Dr. Gretchen L. Hoffman (“Hoffman Declaration”)
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`(Ex. 1108) (discussing public availability of Ex. 1104).
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`3.
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`U.S. Patent No. 5,639,697 (“Weling”) (Ex. 1105), which was filed
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`January 30, 1996, and issued June 17, 1997, is prior art under at least
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`35 U.S.C. § 102(b).
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`4.
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`U.S. Patent Publication No. US 2004/0098674 (“Vuong”) (Ex. 1106),
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`which was filed on November 19, 2002, and published May 20, 2004,
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`is prior art under at least 35 U.S.C. §§ 102(a) and (e).
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`1 The ’552 patent issued from an application filed before enactment of the America
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`Invents Act. Accordingly, the pre-AIA statutory framework applies.
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`B. Grounds for Challenge
`Petitioner requests cancellation of claim 20 of the ’552 patent as
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`unpatentable under 35 U.S.C. § 103 in view of (1) Kanaoka in combination with
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`Weling and Reddy; and (2) Kanaoka in combination with Weling and Vuong. This
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`Petition, supported by the declarations of Dr. John C. Bravman (Ex. 1102) and Dr.
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`Gretchen L. Hoffman (Ex. 1108), demonstrates a reasonable likelihood that
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`Petitioner will prevail with respect to cancellation of the challenged claim. See 35
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`U.S.C. § 314(a).
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`V. DISCRETION UNDER 35 U.S.C. §314(A) AND §325(D)
`The ’552 patent is one of numerous patents asserted by VLSI in multiple
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`district court jurisdictions. Patent Owner has asserted four other patents in the
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`parallel Delaware action. Patent Owner has also asserted 16 additional patents in 4
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`separate cases: VLSI Technology LLC v. Intel Corporation, Nos. 6-19-cv-00254, -
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`255, -256 (W.D. Tx.) and 5-17-cv-05671 (N.D. Cal.). Intel has moved to transfer
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`the Texas actions to Delaware, and the timing of the cases are overlapping and may
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`need to be adjusted. Intel has diligently pursued its defenses, including the
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`assertions of prior art, from when the complaint containing the ’552 patent was
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`filed. Intel brings this IPR to adjudicate validity for claims that VLSI has asserted
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`because (i) the same or substantially the same arguments made in this Petition have
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`not been presented to the Office, (ii) there is uncertainty whether a trial in the
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`district court would conclude before or after the trial of this Petition, (iii) given the
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`complexity of the cases, the number of patents asserted, and the breadth of
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`products accused of infringement, Intel will have a limited amount of time during
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`trial to mount an invalidity defense; and (iv) Petitioner has been ordered to narrow
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`its invalidity defenses, and cannot pursue in the district court litigation the defense
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`outlined in this Petition, and thus is not arguing for invalidity in this forum based
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`on the same art and arguments as in the district court. Petitioner respects the
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`limited resources of the Board, but because this Petition presents unique issues and
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`would be an effective and efficient alternative to the district court litigation,
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`Petitioner requests that the Petition be granted under 35 U.S.C. 314(a) and 325(d).
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`Petitioner may request additional briefing if Patent Owner urges the Board to
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`exercise its discretion to deny this Petition under 314(a) or 325(d).
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`VI. BRIEF DESCRIPTION OF TECHNOLOGY
`In an IC, millions of tiny electronic components are formed in and over a
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`“substrate.” For these electronic components to communicate with each other,
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`electrically conductive pathways must interconnect them. To form these
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`interconnects, layers that contain both electrically-conductive and
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`dielectric/insulating materials are built over the substrate. Ex. 1102, ¶ 26.
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`Figure 1 of the ’552 patent shows the basic arrangement
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`Ex. 1101, Fig. 1. Over substrate 122, a first metal interconnect layer 26 (blue
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`circle) containing conductive materials 56, 58, 60 (blue highlighting), such as
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`copper, is formed. These conductive materials provide pathways for electrical
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`2 All color, annotations, and bold/italics emphases in this Petition are added.
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`signals (or power) to flow, and are electrically isolated from each other by
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`dielectric material 62, such as silica. Ex. 1101, 3:35-38; Ex. 1102, ¶¶ 27-28.
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`Metal interconnect layer 26 is then polished, and interlevel dielectric layer
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`24 (light green circle) is deposited on top of that metal layer. Vertical pathways
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`connecting the conductive materials (e.g., 50 and 58) in different metal
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`interconnect layers (e.g., layers 22 and 26) are formed in the interlevel dielectric
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`layer 24 to create via 59. The process of forming alternating metal interconnect
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`layers 22, 18, and 14 and interlevel dielectric layers 20 and 16 then repeats until
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`all desired layers are built. Ex. 1101, 2:64-67, 3:9-10, 3:35-38, Fig. 1; Ex. 1102, ¶
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`29.
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`Metals in the top metal interconnect layer are often used to form bond pads
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`32 to provide electrical connections to other external components (e.g., a circuit
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`board). These external connections can be made by placing additional metal (e.g.,
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`conductive bump 28) to the bond pad 32. Ex. 1101, 3:10-12, 3:20-25, Fig. 1; Ex.
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`1102, ¶ 30.
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`In addition to these “active” metal interconnects, “dummy” metals can be
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`added as “filler” material. These dummy metals are generally electrically
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`“floating” (i.e., not electrically connected to other metal), but can also be
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`physically connected to other metal structures. It was well-known that adding
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`these “dummy metals can provide added structural reinforcement as well as
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`improved planarity of the layers during fabrication (e.g., during a polishing step).
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`Ex. 1102, ¶ 31.
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`The method of making an integrated circuit typically begins with a high-
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`level design idea, which is followed by a series of basic design phases, including:
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`(1) developing a circuit design; (2) developing a layout corresponding to the circuit
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`design; and (3) modifying the layout to comply with design rules. Long before the
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`’552 patent, computer aided design (“CAD”) tools were used for these design
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`steps. Ex. 1111, 1:45-58 (“CAD techniques have been used with success in design
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`and verification of integrated circuits, at both the structural level and at the
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`physical layout level.”). After the design phase is complete, the integrated circuit
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`is then fabricated according to the modified layout. Ex. 1102, ¶ 32.
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`
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`VII. OVERVIEW OF THE ’552 PATENT
`A. Alleged Prior Art Problem
`The ’552 patent does not claim to have invented ICs that include substrates,
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`interconnect layers, interlayer dielectrics, vias, bond pads, or conductive balls. To
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`the contrary, it admits each of these was well-known in the prior art. Ex. 1101,
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`1:25-2:4 (describing the prior art as involving “conductive balls … to make
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`electrical connection to a bond pad,” “structures fabricated with copper
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`interconnect metallization and low dielectric constant (low-k) dielectrics,”
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`“interlayer dielectrics,” and “vias”). According to the ’552 patent, however,
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`shrinking die sizes and brittle dielectric materials resulted in ICs becoming more
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`susceptible to damage due to the “increased stress … when physical connection is
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`made to the semiconductor die.” Id., Abstract, 1:42-46; Ex. 1102, ¶ 33.
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`B. Alleged Invention
`The ’552 patent purports to address this issue merely by adding “dummy”
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`metal structures below the bond pad to “increase the metal density of the
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`interconnect layers.” Ex. 1101, Abstract, 4:37-56. As shown below, challenged
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`claim 20 does not explicitly recite adding dummy metal lines to mitigate the ICs
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`becoming more susceptible to damage due to forces/stresses when physical
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`connection is made to the semiconductor die. Rather, claim 20 simply recites a
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`method that requires developing a design and layout for an integrated circuit,
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`“modifying the layout by adding dummy metal lines … to achieve a metal density
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`of at least forty percent for each of the plurality of metal-containing interconnect
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`layers,” and then making an integrated circuit using that modified design layout:
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`20. A method of making an integrated circuit having a plurality of
`bond pads, comprising:
`developing a circuit design of the integrated circuit;
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`developing a layout of the integrated circuit according to the circuit
`design, wherein the layout comprises a plurality of metal-containing
`interconnect layers that extend under a first bond pad of the plurality of bond
`pads, at least a portion of the plurality of metal-containing interconnect
`layers underlying the first bond pad and not electrically connected to the first
`bond pad as a result of being used for electrical interconnection not directly
`connected to the bond pad;
`modifying the layout by adding dummy metal lines to the plurality of
`metal-containing interconnect layers to achieve a metal density of at least
`forty percent for each of the plurality of metal-containing interconnect
`layers; and
`forming the integrated circuit comprising the dummy metal lines.
`Id., claim 20; Ex. 1102, ¶ 34.
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`As detailed below, however, adding dummy metal lines to achieve a metal
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`density of at least forty percent was well known and disclosed in the prior art—
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`including by (1) Kanaoka, which teaches adding dummy metal lines in an
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`integrated circuit to achieve desired metal densities above 40%, (2) Weling, which
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`teaches adding dummy metal lines to areas of an integrated circuit to obtain a
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`predetermined metal density above 40%, (3) Reddy, which teaches a process for
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`making an integrated circuit, and (4) Vuong, which also describes integrated circuit
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`design processes, including adding dummy “metal fill” to increase metal density.
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`Ex. 1102, ¶ 35.
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`C. Relevant Prosecution History
`The ’552 patent issued from U.S. Application No. 11/033,009, filed January
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`11, 2005. The Examiner rejected all original claims over U.S. Patent Publication
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`No. 2005/0082577. Ex. 1112, 3-7. In response, the applicant amended (among
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`other things) challenged claim 20 with the following underlined language to recite
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`“wherein the layout comprises a plurality of metal-containing interconnect layers
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`that extend under a first bond pad of the plurality of bond pads, at least a portion of
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`the plurality of metal-containing interconnect layers underlying the first bond pad
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`and not electrically connected to the first bond pad as a result of being used for
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`electrical interconnection not directly connected to the bond pad.” Ex. 1113, 6-7.
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`The Examiner allowed claim 20 as amended. Ex. 1107, 2.
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`VIII. OVERVIEW OF THE PRIOR ART
`The prior art demonstrate that the claimed method of making an integrated
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`circuit was well-known in the art. As more fully explained below, Reddy and
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`Vuong are exemplary prior art that demonstrates the steps involved in designing
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`and making an integrated circuit were well-known. This overall concept is
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`ubiquitous in the production of almost all complex systems. Kanaoka, Weling and
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`Vuong all demonstrate the well-known concept of adding dummy metal lines as
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`part of a method for designing and making an integrated circuit. Ex. 1102, ¶ 37.
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`A. Overview of Reddy
`Reddy describes the process for designing an integrated circuit using well
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`known computer aided tools. Ex. 1104, 1. In Figure 1.1 below (modified to
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`improve resolution of the text), Reddy shows a “generic IC [integrated circuit]
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`design flow” for the various design phases of an integrated circuit:
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`Id., 1-2, Fig. 1.1 (“Design Flow is a term used to describe the various design
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`phases of an IC design.”); Ex. 1102, ¶ 38.
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`As detailed below more fully, Reddy maps directly to the design flow steps
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`in challenged claim 20. Id., ¶ 39.
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`Developing a Circuit Design
`In steps 1 to 4 of Figure 1.1, Reddy describes the basic steps involved in
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`developing a circuit design of an integrated circuit:
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`Ex. 1104, Fig. 1.1. Step 1 involves coming up with the idea of the integrated
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`circuit design; steps 2 and 3 involve developing a behavioral and structural
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`description of that design; and step 4 involves creating a schematic overview of the
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`design (including a timing analysis and simulation). Id., 3-4, Fig. 1.1; Ex. 1102, ¶
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`40.
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`Developing a Layout According to the Circuit Design
`Step 5 of Figure 1.1 illustrates developing a “layout” according to the circuit
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`design:
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`Ex. 1104, 4-5, Fig. 1.1. In this context, “layout generation” refers to developing a
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`representation of the geometric shapes of the electrical components on the
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`substrate and the electrically conductive pathways in different metal interconnect
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`layers and interlevel dielectric layers. As Reddy explains, “semi or fully
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`automated [electronic design automation] tools” can be used to generate the layout.
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`Id.; Ex. 1102, ¶ 41.
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` Modifying the Layout
`Steps 6 and 7 involve performing a design rule check (“DRC”) and layout
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`vs. schematic (“LVS”) checks:
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`Ex. 1104, Fig. 1.1. The LVS check “ensures that the layout is in conformance with
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`the schematic” of the circuit design, and the “design rule check ensures that [the
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`layout does not violate] the rules laid down by the fabrication process technology.”
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`Id., 5. “The design process moves back and forth between Layout [(step 5)], LVS
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`[(step 7)] and DRC [(step 6)].” Id. In this iterative process, “design rules are
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`checked” every time the “layout is modified,” id., 105, and the layout is modified
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`to ensure compliance with the design rule check that occurs in step 6. Ex. 1104, 5-
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`6 (“[A] design rule check ensures that the rules laid down by the fabrication
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`process technology are not violated. A good example would be, some processes
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`need transistors, wires and polysilicon to be of a certain minimum width. The
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`layout would have to be drawn based on such constraints.”); Ex. 1102, ¶ 42, 44.
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`The design rules “are flexible and can be customized.” Ex. 1104, 105. The
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`design rule check is carried out for each metal interconnect layer. For example, in
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`Figure 5.29, Reddy shows an exemplary “DRC customization window” in which a
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`design rule check is performed on several different metal interconnect layers
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`(“Metal-1,” “Metal-2,” “Metal-3,” etc.) of the integrated circuit under design.
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`Id., Fig. 5.29; Ex. 1102, ¶ 43.
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`Forming the Integrated Circuit
`In steps 8-9, final simulation is carried out and “files that describe the
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`[integrated circuit] layout” are generated. Ex. 1104, 6. Then, in step 10, Reddy
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`teaches fabrication of integrated circuits using the modified layout:
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`Id., Fig. 1.1; Ex. 1102, ¶ 45.
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`B. Overview of Vuong
`Vuong similarly describes steps to design and manufacture an integrated
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`circuit, but explicitly includes a “metal fill” step in the design flow process. Ex.
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`1106, Abstract. Vuong states that increasing metal density by adding “metal-fill
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`patterning” was a “common approach” used to avoid having too much space
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`between active metal lines and unwanted “bumps” in layers in the finished chip
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`(which can adversely affect polishing those layers). Id., [0003]-[0004] (“If there is
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`an insufficient amount of metal at a particular portion or ‘window’ on the chip,
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`then metal-fill is required to increase the proportion of metal in that portion or
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`window.”); Ex. 1102, ¶¶ 46, 49.
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`Vuong describes several approaches for adding metal-fill patterning during
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`chip design. For example, Vuong explains that, after an integrated circuit design
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`and layout are created, the layout can be divided into “portions or windows,” and
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`checks can be carried out to determine if the amount of metal in those
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`portions/windows meets certain design requirements. Ex. 1106, [0006] (“[A] chip
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`layout is divided into a set of delineated portions or windows” and calculations are
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`performed to determine the proportion of metal materials versus non-metal
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`materials in each window); Ex. 1102, ¶ 50.
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`If the calculations reveal that the amount of metal density in those areas falls
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`below a threshold level, the layout is modified by adding a “fill template” (i.e., a
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`“fixed pattern of uniform metal shapes”) to perform “fill patterning” (i.e., to fill in
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`portions of the window without active metal lines)—“resulting in the new chip
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`layout.” Ex. 1106, [0007], [0006] (“If the proportion of metal in that window is
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`below a specified minimum percentage, then metal-fill patterning is performed to
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`increase the amount of metal.”). Once a layout has been modified with a new “fill
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`template,” “a determination is made whether the layout meets minimum and
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`maximum metal requirements.” Id., [0008]. If not, a new fixed pattern is selected
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`and the process repeats “until the final layout satisfies the minimum and maximum
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`metal percentage requirements for the chip.” Id., [0009]-[0010]3; Ex. 1102, ¶ 51.
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` Vuong discloses that shapes for metal fills include “long wires 804”—also
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`called “fill lines”—that “split” portions of a window not containing metal
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`interconnects (“whitespace”) as shown in Figure 8 below:
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`3 Vuong also describes a modification to the “fixed template” approach that
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`“dynamically adjust[s] shape widths and different shape lengths that best fill [a
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`window] area, in which only a single pass is needed to appropriately determine the
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`metal-fill pattern.” Ex. 1106, [0011]; Ex. 1102, ¶ 52.
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`Ex. 1106, Fig. 8, [0044]. Vuong further teaches that “[i]f desired, the long wires of
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`the metal-fill pattern can be split again in another direction to form smaller metal-
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`fill pattern element, as shown by elements 806 in Fig. 8.” Id., [0045]; Ex. 1102, ¶
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`53.
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`In Figure 14, Vuong shows an automated tool called “Layout/Place&Route
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`Tool” 1402:
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`Ex. 1106, [0059], Fig. 14. Vuong teaches that, using the steps depicted in this
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`figure, “Layout/Place&Route Tool” is configured to:
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`(1)
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`receive a synthesized circuit design 1404 for an integrated circuit (“a
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`synthesized gate-level netlist 1404 of a circuit design”), id., [0059] (“[The]
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`layout/place & route tool takes as input a synthesized gate-level netlist 1404 of a
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`circuit design ….”);
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`(2)
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`develop a layout for the integrated circuit according to the received
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`circuit design 1404 by using “placement portion 1408 to place the logic gates and
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`… a routing portion 1410 to route the tracks on a floorplan…,” id.;
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`(3) modify the circuit design layout by adding metal fill using “metal-fill
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`mechanism 1412,” id.; and
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`(4) verify the modified layout (verification 1416) to ensure the modified
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`design functions properly, id. (“[The] verification tool 1416 [is used] to verify the
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`appropriateness of the physical design.”); Ex. 1102, ¶ 47.
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`
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`If the verification step identifies a problem, tool 1402 corrects it by repeating
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`the layout step to make any necessary further modifications to the layout. Ex.
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`1106, [0059]. By integrating the “metal fill” step (1412) to the layout
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`design/modification process of tool 1402, Vuong explains that “the metal-fill
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`becomes just another set of features of the physical design that is verified during
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`the ordinary course of performing extraction and verification upon the layout.” Id.,
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`[0060]; Ex. 1102, ¶ 48.
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`C. Overview of Kanaoka
`Kanaoka teaches the addition of dummy metal lines below bond pads in
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`designing and manufacturing an integrated circuit. Ex. 1103, 1:6-26, 11:22-25.
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`Figure 25 of Kanaoka below provides a top-down plan view showing a
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`semiconductor chip (labeled “1C”) with multiple electrode bond pads (labeled
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`“PD”):
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`Id., Fig. 25, 9:63-67, 10:9-17, 11:59-12:7. Below each bond pad are multiple
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`metal-containing interconnect layers. Id., 10:45-61. The four corner bond pads
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`colored in red are called “dummy pads” and, as such, they need not be electrically
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`connected to any circuitry. Id., 11:3-4 (“The pad PD16 indicates, for example, a
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`corner dummy pad.”); id., 14:10-12 (“Since the pad PD16 is a dummy pad, it is not
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`necessary to electrically connect the underlying layers of the second-layer wiring
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`M2 and the first-layer wiring M1 [that are below it].”). Regardless of whether they
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`are used for active circuitry or as dummy pads, solder bumps are placed on all
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`pads. Id., 1:41-42 (“[B]ump electrodes [are] bonded to the respective electrode
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`pads.”); id., 14:19-22 (“[B]ump 11 [is] bonded to the dummy pad PD16.”); Ex.
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`1102, ¶ 54.
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`Figure 45 below contains a cross-sectional view of pad PD16 (one of corner
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`dummy pads of Figure 25 colored in red) on metal layer M3:
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`
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`Ex. 1103, Fig. 45. Below pad PD16 are insulating films IS1, IS2 and IS3 (light
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`green) with metal layers M1 and M2 (blue). Id., 14:23-15:35; Ex. 1102, ¶ 55.
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`Kanaoka explains that, during manufacture of an integrated circuit, these
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`layers are built up sequentially, but that failures can result if uneven amounts of
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`metal in different layers below the pads exist, resulting in pads of different heights
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`relative to one another. Ex. 1103, 1:36-46, 9:17-20 (“[W]here a number of
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`insulating films are provided below the respective pads, the upper surface is
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`recessed and steps are liable to develop.”); Ex. 1102, ¶ 56.
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`To address this issue, Kanaok