AANAAAAA
`(11) Patent Number:
`5,508,653
`United States Patent ou
`Chu et al.
`(45) Date of Patent:
`Apr. 16, 1996
`
`
`[54] MULTI-VOLTAGE CIRCUIT
`ARRANGEMENT AND METHOD FOR
`ACCOMMODATING HYBRID ELECTRONIC
`SYSTEM REQUIREMENTS
`
`OTHER PUBLICATIONS
`
`Applications Note from S-MOSSystems, “Low Power Low
`Voltage Gate Array,” Nov. 13, 1992.
`
`Inventors: Edwin Chu, Cupertino; Terng-Huei
`Lai, Milpitas, both of Calif.
`
`Assignee: ACC Microelectronics Corporation,
`Santa Clara, Calif.
`
`Primary Examiner—William L. Sikes
`Assistant Examiner—Tiep H. Nguyen
`Attorney, Agent, or Firm—Schneck & McHugh
`
`[57]
`
`ABSTRACT
`
`A multi-voltage circuit on a semiconductor chip including
`core circuitry driven by a power supply voltage cqual to the
`voltage of a selected external device operating in connection
`with the semiconductor chip, and having input/output cir-
`cuitry in selected regions for operating in connection with
`external devices having the same operating voltage and
`other external devices having a selected substantially lower
`operating voltage. Peripheral input/output circuit regions of
`at least first and second kinds are established for interfacing
`with the respective high and low voltage external devices.
`According to one version of the invention, the input/output
`circuitry directed toward interfacing with external devices
`operating at a particular voltage level is concentrated at a
`particular peripheral region in the periphery of the semicon-
`ductor chip. According to another version of the invention,
`multiple regions of input/output circuitry are established for
`external devices at the same voltage level. These multiple
`4,929,852—S/1990 Bae veeccsssessssoscesseessccsssssanoerees 326/81
`
`regions may be configured by the system designer to operate
`5,352,942 10/1994 Tanaka
`. 326/63
`with any combination of high voltage and low voltage
`5,406,140—4/1995 Wert ...sescscsscersessensenssasenareress 326/81
`external devices.
`
`175]
`
`[73]
`
`{21]
`
`[22]
`
`[63]
`
`[51]
`[52]
`[58]
`
`[56]
`
`Appl. No.: 320,438
`
`Filed:
`
`Oct. 7, 1994
`
`Related U.S. Application Data
`
`Continuation-in-part of Ser. No. 129,990, Sep. 29, 1993.
`
`Int. CL® ...
`.. H03K. 19/0175; GOSF 1/00
`
`
`US. Ch. ow.
`.... 327/519; 326/80; 326/63
`Field of Searchy o.......ccescssccssscceees 326/80, 81, 63;
`327/519, 547
`
`References Cited
`
`U.S. PATENT DOCUMENTS
`
`FOREIGN PATENT DOCUMENTS
`
`2248988
`
`4/1992 United Kingdom ...... eee 326/80
`
`14 Claims, 3 Drawing Sheets
`
`HV
`DEVICE
`
`l4a
`
`
`
`
`18c
`
`HV
`DEVICE
`
`POWER
`SUPPLY
`
`
`
`APPLE 1024
`
`1
`
`APPLE 1024
`
`

`

`U.S. Patent
`
`Apr. 16, 1996
`
`Sheet 1 of 3
`
`5,508,653
`
`LV V/O CIRCUITRY
`
`HV
`DEVICE
`
`18b
`
`
`
`
`FIG. 1A
`
`2
`
`

`

`USS. Patent
`
`Apr. 16, 1996
`
`Sheet 2 of 3
`
`5,508,653
`
` POWER
` HV DEVICES 18
`
`SUPPLY
`
`
`LV
`DEVICES 14
`
`LV POWER
`
`HV POWER
`
`3
`
`

`

`U.S. Patent
`
`Apr. 16, 1996
`
`Sheet 3 of 3
`
`5,508,653
`
`POWER
`
`DEVICES
`
`43
`
`es
`
`5O
`
`M
`> 0
`G
`
`HVPOWER
`
`DEVICES
`
`DEVICES
`
`DEVICES 41
`
`FIG.
`
`DEVICES
`
`44
`
`45
`
`4
`
`

`

`5,508,653
`
`1
`MULTI-VOLTAGE CIRCUIT
`ARRANGEMENT AND METHOD FOR
`ACCOMMODATING HYBRID ELECTRONIC
`SYSTEM REQUIREMENTS
`
`CROSS REFERENCE TO RELATED
`APPLICATION
`
`This application is a continuation in part of application
`Ser. No. 08/129,990, filed Sep. 29, 1993.
`
`TECHNICAL FIELD
`
`The field of this invention is that of multi-voltage circuit
`arrangements and methods, and more particularly multi-
`voltage circuit arrangements and methods for accommodat-
`ing hybrid system requirements.
`
`BACKGROUNDOF THE INVENTION
`
`Semiconductor technology is increasingly being driven
`by market demand for low-power, portable computer sys-
`tems. Such computer systems include a range of new prod-
`ucts directed toward laptop, palmtop and pen-based com-
`puters. The effects of this market influence includc a strong
`tendency to increasingly rely upon lowervoltageintegrated
`circuits (IC’s) and application specific integrated circuits
`(ASIC’s). These low voltage devices help to extend the
`battery life of the particular systems in which they are used.
`However, this extended battery life is obtained at the cost of
`system performance. For example,
`the delay through a
`semiconductor device is dependent upon a number of
`parameters, including the supply voltage. As the supply
`voltage decreases, the overall speed of the device dimin-
`ishes. Another concern when using low voltage devices is
`the reality that existing components such as expansion cards,
`disk drives and other external devices are built using com-
`ponents that operate at the higher voltage levels. Thus, low
`voltage devices must include additional circuitry known as
`level shifters to accommodate pre-existing high voltage
`devices.
`
`FIG. 1A shows a multi-voltage circuit arrangement
`according to the prior art. In particular, FIG. 1A schemati-
`cally illustrates a hybrid multi-chip circuit system 10,
`including a semiconductor chip 12 and peripheral devices
`such as external low voltage devices 14, a power supply 15,
`a level shifter 16 and external high voltage devices 18. The
`semiconductor chip 12 is a low voltage device in the sense
`that it is powered by a semiconductor chip power supply
`having a voltage level lower than the powersupply voltage
`level of some of the peripheral devices to which the semi-
`conductor chip 12 is connected. Currently, many peripheral
`devices are preferably poweredat either 5 volts or 3.3 volts
`DC. An example of a high voltage device 18 would accord-
`ingly be a device which relies upon a 5 volt power supply,
`while a low voltage device would be a device which is
`powered by a 3.3 volt power supply. A range of low voltage
`devices 14a-14c are shown in FIG. 1A. These devices
`include a low voltage central processing unit (CPU) 14a, a
`low voltage memory 14b and a generic low voltage device
`14c. Similarly, FIG. 1A showsa plurality of different kinds
`of high voltage input/output devices 18, respectively 18a
`and 18b. A power supply 15 provides high voltage (HV)
`powerand low voltage (LV) powerto a level shifter 16, and
`low voltage power to the semiconductor chip 12.
`in the case of the prior art multi-chip circuit system 10
`shown in FIG. 1A, the low voltage devices 14 are directly
`connectedto a semiconductor chip 12 through a suitable bus
`
`20
`
`40
`
`45
`
`55
`
`60
`
`65
`
`2
`19a, and the high voltage devices 18 are directly connected
`to the level shifter 16, which in tum is connected to the
`semiconductor chip 12. The level shifter 16 is a well-known
`interface device which is effective for receiving output
`signals from the semiconductor chip 12 and conveying these
`signals to the high voltage devices 18. The level shifter 16
`is further effective for receiving input signals from high
`voltage devices 18 to be conveyed to the semiconductor chip
`12. The level shifter 16 is connected to the high vollage
`devices 18 along a bus 195. Busses 19a and 196 can connect
`one or more devices to the semiconductor chip 12. A bus can
`further be a serial or parallel electrical connection having a
`plurality of electric lines.
`The semiconductor chip 12 in the prior art of FIG. 1A
`includes a region of low voltage input/output circuitry 20
`and a region of low voltage core circuitry 22 connected to
`the low voltage input/outputcircuitry 20. The low voltage
`core circuitry 22 includes, for example, logic circuitry and
`memory circuitry for performing a variety of selected opera-
`tions with respect to a range of external devices and systems.
`The low voltage input/output circuitry 20 includes input
`buffers 20a and output buffers 20b. The semiconductor chip
`12 is completely unitary in thatall of its regions are powered
`by the same voltage supply level, which is low compared to
`a high voltage level being employed to powera selected one
`or morc of high voltage devices 18.
`FIG, 1B showsanotherversion of the priorart, according
`to which the level shifters 16 are integrated into the semi-
`conductor chip 12, as opposed to being off chip as shown in
`FIG. 1A. According to this version of the prior art, a level
`shifter 16b serves to convert the low voltage output of the
`low voltage core circuitry 22 to a sufficiently high voltage to
`drive the high voltage devices 18a and 18b. Conversely, the
`level shifter 16a converts the high voltage output of the high
`voltage devices 18a and 18b to the low voltage level
`required by the low voltage core circuitry 22. With the
`exception of the level shifters 16a and 16b, the semicon-
`ductor chip 12 is supplied with low voltage power (LV) from
`the power supply 15. The level shifters 16a and 16b are
`provided with both low voltage power (LV) and high voltage
`power (HV).
`Unfortunately, the use of the level shifters 16a and 16d,
`whetherintegrated into the semiconductorchip 12 or used as
`a separate, discrete element external to the semiconductor
`chip 12, tends to increase costs significantly. In the case of
`the external level shifter 16 of FIG. 1A, the incrcased cost
`includes the cost of the additional component,a reduction in
`reliability as a result of an additional connection which may
`fail and added expense in terms of an opportunity cost since
`available space is consumed which mighteffectively have
`been employed in a more worthwhile fashion. In the case of
`the on-chip level shifters 16a and 16b of FIG. 1B, the same
`loss of space detriment is suffered, except that the spacc
`relates to available chip topography, rather than real estate
`consumed on a chip carrier or circuit board, An additional
`cost is the design cost in customizing the semiconductor
`chip 12 to includethe level shifters 16a and 16b as part of
`the internal circuitry of the semiconductor chip 12.
`It is therefore desirable to have a high voltage semicon-
`ductor device which is comparable to the low voltage
`devices, such as the semiconductor chip 12 oftheprior art
`of FIGS. 1A and 1B, in terms of powerconservation, while
`at the same time obviating the need for the level shifters 16.
`Such high voltage semiconductor devices would also have
`speed advantages overthe low voltage devices, being oper-
`able at a higher voltage. The present invention takes advan-
`tage of the fact that the most power hungry logic is the
`
`5
`
`

`

`5,508,653
`
`3
`input/output (I/O) circuitry, and achieves the desired mul-
`tiple goals of having comparable power conservation, avoid-
`ing the use of level shifters and attaining higher operating
`speeds.
`
`SUMMARYOP THE INVENTION
`
`According to the invention, the core circuitry of a semi-
`conductorchip is driven by a powersupply voltage equal to
`the drive voltage of a high voltage input/output device.
`Typical core circuitry includes logic circuits and memory
`circuits. Input and output buffers on the semiconductor chip
`provide an interface to external devices for data communi-
`cation with the core circuitry. The buffers are supplied with
`high and low voltage levels to allow for conncction to both
`high and low voltage level external devices, without the
`need for expensive and space consuming level shifters. In
`particular, the invention is directed toward a mullti-voltage
`circuit arrangement which is effective for driving input/
`output circuit devices relying upon a range of power supply
`voltage levels, obviating the need for level shifter circuitry.
`The semiconductor chip core circuitry is driven at a high
`voltage level, and first and second regions of input/output
`circuitry are established on the semiconductorchip; the first
`region being configurable for interfacing with high voltage
`devices, and the second region being configurable for inter-
`facing with low voltage devices.
`The invention is further directed toward a multi-voltage
`circuit on a semiconductor chip including core circuitry
`driven by a power supply voltage having a high voltage
`level. The multi-voltage circuit further includes input/output
`circuitry arranged in groups for operation with external
`devices having the same operating voltage. Peripheral input/
`output circuit regions are established on the semiconductor
`chip to accommodate these groupingsof I/O circuitry. These
`input/output regions allow a systems designer to configure
`the multi-voltage circuit to interface with any combination
`of high and low voltage external devices.
`According to one version of the invention, the input/
`output circuitry directed toward interfacing with external
`devices operating at a particular voltage level is concen-
`trated at a particular selected peripheral region in the perim-
`eter of the semiconductor chip. According to another version
`of the invention, multiple regions of input/output circuitry
`arc established to cooperate with external devices at a
`particular voltage level of the same magnitude. These con-
`figurable input/output regions provide flexibility for the
`system designer to assist, for example, in the design of
`printed circuit board layouts.
`According to the invention, the core circuitry is main-
`tained at a relatively high supply voltage with respect to at
`least someofthe input/outputcircuitry regions. This ensures
`that there will be no performance degradation due to under
`voltage operation. Moreover, since power consumption at
`high voltage is felt primarily in the input/output circuitry
`tegions, operating the core circuitry at a high voltage will
`notsignificantly increase power consumption.
`
`BRIEF DESCRIPTION OF THE DRAWINGS
`
`FIG. 1A shows a multi-voltage circuit arrangement
`according to the prior art in which high voltage and low
`voltage devices can be operated in connection with a semi-
`conductor chip relying upon lower voltage core circuitry,
`including level shifter circuitry external to the semiconduc-
`tor chip.
`
`—0
`
`25
`
`w0
`
`45
`
`50
`
`55
`
`60
`
`4
`FIG. 1B shows a multi-voltage circuit arrangement
`according to the prior art in which high voltage and low
`voltage devices can be operated in connection with a semi-
`conductor chip relying upon low voltage core circuitry,
`including level shifter circuitry integrated into the semicon-
`ductorchip.
`FIG.2 shows a multi-voltage circuit arrangement accord-
`ing to the invention.
`FIG. 3 depicts a multi-voltage semiconductor according
`to the invention, including first and second groups of input/
`outputcircuitry configured to operate at a high voltage level
`and a low voltage level.
`FIG. 4 illustrates a multi-voltage semiconductor of the
`preferred embodiment having a plurality of I/O regions.
`
`BEST MODE FOR CARRYING OUT THE
`INVENTION
`
`FIG. 2 shows a multi-voltage circuit arrangement fabri-
`cated on a single semiconductor chip 12 according to the
`invention herein. The multi-voltage circuit arrangement
`includesa core circuitry 22 effective for performing a range
`of functions and operations, including logic and memory
`functions. A plurality of input/output (/O) circuitry 20
`provides interfaces for data communication betwcen the
`core circuitry 22 and various external devices 14a—14c and
`18a-18c. The I/O circuitry 20 includes input buffers 20a and
`output buffers 20. Power connection points 24 and 26
`provide power connections to a power source 15 which
`provides respectively a low voltage level (LV) and a high
`voltage level (HV). In accordance with the invention, the
`core circuitry 22 is electrically connected to the high voltage
`connection point 26 for high voltage operation.
`Typical voltage values currently used in the industry
`include devices which operate at a high voltage value of 5
`volts and devices which operate at a low voltage value of 3.3
`volis. However, the 5 volt and 3.3 volt values are not a
`requirementof the multi-voltage device made in accordance
`with the invention. ‘The high and low voltage values actually
`used may be based upon the voltage levels of the external
`devices present in a particular application, and are not
`necessarily fixed to the standards set by the industry. For
`example, custom designed external devices which have
`operating voltages different from the industry standards may
`be used with the multi-voltage device 12 of FIG. 2. The
`standard 5 volt and 3.3 volt voltage levels may not be
`appropriate in such an application. In general, by selecting
`the appropriate device geometries, a multi-voltage device in
`accordance with the invention can be manufactured to
`operate with different pairs of high voltage and low voltage
`values.
`
`FIG. 2 also shows that all of the input buffers 20a are
`connected to the high voltage power connection point 26.
`Theresulting high operating voltage of the input buffers 20a
`are thus able to drive the high voltage core circuitry 22
`regardless of whether the external device is a high voltage
`device 18a-18c or a low voltage device 14a-14c,
`thus
`effectuating the communication of data from the external
`devices to the high voltage core circuitry 22. It is noted that
`the input buffers 20a need not be coupled to the same power
`connection point, so long as the input buffers 20a are
`coupled to a power source that provides the same voltage
`level needed to drive the core circuitry 22.
`Specifications for external devices presently include, but
`are not limited to, high voltage devices which have an output
`voltage swing from 0-5 volts and low voltage devices which
`
`6
`
`

`

`5,508,653
`
`5
`have an output voltage swing from 0—3.3 volts. In addition,
`the industry has come to recognize the TTL compatible
`model for digital circuits, which defines a logical zero by a
`voltage level of <0.8 volts and a logical one by a voltage
`level of >2.0 volts. Thus, if the multi-voltage device 12 of
`FIG. 2 is supplied with power for operation with high
`voltage devices operating at a voltage level of 5 volts and
`low voltage devices operating at a voltage level of 3.3 volts,
`the input buffers 20a are said to be TTL compatible since the
`output voltage swing of each type of device conforms to
`TIL voltage level definitions.
`FIG. 2 further shows that some of the output buffers 20b
`are connected to the high voltage power connection point 26.
`The resulting high operating voltage of these output buffers
`20b is capable of driving the high voltage devices 18a—18c
`to which they are connected,
`thereby allowing for the
`communication of data from the high voltage core circuitry
`22 to the high voltage devices 18a-18c. In like fashion, the
`remainderofthe outputbuffers 20b are connected to the low
`voltage power connection point 24. The low voltage sup-
`plied to these output buffers 20limits their output voltage
`swing between ground and the value of the low voltage
`supplied, despite the fact that the output buffers 20b are
`driven by high voltage signals from the high voltage core
`circuitry 22. The proper electrical signals are thereby pre-
`sented to the external low voltage devices 14a—14c, allow-
`ing for the communication of data from the high voltage core
`circuitry 22 to the low voltage external devices 14a~14c.It
`is not required that the output buffers 20b be coupled to the
`connection points 24 and 26 as shown in FIG. 2. It is
`sufficient that the output buffers 20b be provided with power
`at the voltage levels that correspondto the voltage levels of
`the devices to which the output buffers would be connected.
`The advantage of the multi-voltage circuit of FIG. 2 is
`madeclear by referring back to the prior art of FIGS. 1A and
`1B. The low voitage I/O circuitry 20 ofthe priorart circuits
`cannot drive the high voltage devices 18 without the aid of
`a level shifter 16. Furthermore, the core circuitry 22 of the
`prior art operates at a slower speed dueto its low operating
`voltage. By comparison, the arrangement of the input and
`output buffers 20a and 20b of the circuit of FIG. 2 as
`described above obviates the level shifters of the prior art,
`while at the same time allowing for the core circuitry 22 to
`operate at a high voltage level to attain the preferred higher
`operating speed.
`FIG. 3 illustrates an arrangement of input/output circuit
`elements into regions according to the invention herein,
`whichis effective for permitting direct operation with both
`high. voltage and low voltage external input/output devices
`18 and 14. This is accomplished by operating a corecircuitry
`22 at a selected high voltage level approximately the same
`as the operating voltage of the highest voltagc external
`input/output device, and providing a plurality of different
`regions of input/output circuitry 20. This is illustrated in
`FIG. 3 by an annular region of input/outputcircuitry dis-
`posed about the periphery, or perimeter, of the core circuitry
`22. Eachof the input/output regions 20° and 20"includes one
`or more pairs of input and output buffers. FIG.3 illustrates
`a pair of input/output buffers 20a'/20b' and 20a"/20b" for
`each input/output region 20° and 20"respectively.
`Three power connection points 24, 26 and 28 are shown
`for providing powerto the core circuitry 22, and to the two
`input/output regions 20' and 20". Thus, the core circuitry 22
`is coupled to power connection point 26, to which a high
`voltage (HV) powersource is connected. In accordance with
`the invention, ali of the input buffers 20a' and 20a" of the
`input/output regions 20' and 20" are powered at the same
`
`6
`voltage level as the core circuitry 22, as exemplified in FIG.
`3 by theelectrical connections to power connectionpoint 26.
`Further in accordance with the invention, all of the output
`buffers 20b' of the input/output region 20° are coupled to
`power connection point 24, and all of the output buffers 20b"
`of the input/output region 20" are coupled to power con-
`nection point 28. It is noted that the input buffers 20a’ and
`20a" and the core circuitry 22 need not be coupled to the
`same power connection point 26. A power coupling which
`provides the same voltage level to the input buffers 20a’ and
`20a"as the core circuitry 22 is within the spirit and scope of
`the invention.
`
`10
`
`FIG.3 showsa particular configuration of the invention in
`which the input/output region 20'is configured for interfac-
`ing with low voltage devices 14, as indicated by the con-
`nection of a low voltage (LV) power source to the power
`connection point 24. The input/output region 20"is shown
`configured for interfacing with high voltage devices 18, as
`evidenced by the connection of an HV powersourceto the
`power connection point 28. The high operating voltage of
`the input buffers 20a' and 20a" are able to drive the core
`circuitry 22 to allow the communication of data to the core
`circuitry 22 from any external device, whether the operating
`voltage of the device is a high voltage or a low voltage level.
`Conversely, the separately powered output buffers 20b' and
`20b" of each input/output region 20' and 20" provide proper
`clectrical
`interfaces to the corresponding high and low
`voltage external devices 14 and 18 for communication of
`data from the core circuitry 22. In particular,
`the low
`operating voltage of the output buffers 20b'
`limits their
`output voltage swing, despite the high voltage signals ofthe
`high voltage core circuitry 22, and thus provides the proper
`signal
`levels to the low voltage devices 14. This muiti-
`voltage arrangement obviates the need for the level shifters
`16 (FIGS. 1A and 1B)ofthe priorart.
`While FIG. 3 shows only two regions of input/output
`circuitry 20' and 20”, it is possible to implementthe inven-
`tion with a greater multiplicity of regions, thus providing
`increased design flexibility. This is shown with particularity
`in FIG. 4, whichillustrates a vollage topography according
`to this version of the invention, in which a greater number
`of regions of input/output circuitry are fabricated on the
`semiconductor chip 12.
`FIG. 4 shows an embodimentof the multi-voltage semi-
`conductor device 12 in accordance with the disclosed inven-
`tion which offers greater design flexibility for a system
`designer. A core of high voltage core circuitry 22 is fabri-
`cated on the multi-voltage device 12. A power connection
`point 30, to which a high voltage power source is connected,
`couples a high voltage level to the core circuitry 22 for high
`voltage operation. Defined along the periphery of the core
`circuitry 22 are a number of regions 41-45 in which input/
`output circuitry is disposed 41a/41b—45a/45b. Each region
`41-45 further includes a corresponding power conncction
`point 31-35respectively.
`At least one pair of input and output buffers 41a/41b-45a/
`45b is disposed in each of the regions 41-45. Moreover,the
`input buffers 41a—45a of all of the regions 41-45 are
`powered at the same voltage level as the voltage level used
`to power the core circuitry 22. Thus, for example, FIG. 4
`illustrates electrical coupling of the input buffers 41a—45a to
`the power connection point 30, to which the corecircuitry 22
`is also coupled. By comparison, the output buffers 41b-45b
`are connected to separate power connection points 31-35
`respectively.
`With the multi-voltage device as described in FIG. 4, any
`external device can communicate data to the core circuitry
`
`45
`
`35
`
`60
`
`7
`
`

`

`5,508,653
`
`7
`22 because the input buffers 41a—45a operate at the same
`voltage level as the core circuitry and therefore are able to
`drive the core circuitry, regardless of the operating voltage
`of the external device. Furthermore, by connecting the
`appropriate voltage level to each power connection point
`31-35 of each region 41-45, any combination of high
`voltage and low voltage external devices can receive data
`from the core circuitry 22.
`The multi-voltage device 12 of FIG. 4 shows POWER
`signals coupled to each of the power connection points
`31-35. By selecting appropriate voltage levels for each
`POWERsignal, any combination of high voltage and low
`voltage DEVICEScan be interfaced to the core circuitry 22
`for data communication. For example, selecting low voltage
`POWERsignals for the power connection points 31, 33 and
`35, and high voltage POWER signals for the power con-
`nection points 32 and 34 will result in an alternating arrange-
`ment of low and high power input/output regions 41-45.
`Similarly, it is possible to select appropriate POWERsignal
`voltage levels so that adjacent regions have the same oper-
`ating voltage level. Thus, selecting high voltage POWER
`signals for the power connection points 31, 32 and 33, and
`low voltage POWER signals for the power connection
`points 34 and 35 will result in adjacent regions of operating
`voltage. The configuration of high and low input/output
`regions will depend upon the system requirements of the
`particular hardware application. Furthermore, the device of
`FIG.4 is not limited to five distinct input/output regions. It
`is contemplated that devices in accordance with the inven-
`tion may have fewer or more distinct input/output regions.
`The description above details preferred versions of the
`invention.It is noted that the present inventionis not limited
`to the specific embodiments described in the specification,
`and that a person ofordinary skill in the art of semiconductor
`device manufacture will contemplate additional embodi-
`ments consistent with the spirit and scope of the invention.
`The invention described herein is stated completely in the
`claims which follow.
`Weclaim:
`1. A multi-voltage circuit on a single semiconductorchip,
`comprising:
`a first input ofelectrical power havinga first voltage level;
`a second inputofelectrical power having a second voltage
`level less than said first voltage level;
`core circuitry having an electrical connectionto said first
`input, thereby operating at said first voltage level;
`first I/O circuitry in data communication with said core
`circuitry, said first /O circuitry having a first data path
`to an external device being poweredat said first voltage
`level; and
`second I/O circuitry in data communication with said core
`circuitry, said secondI/O circuitry having a second data
`path to an external device being poweredat said second
`voltage level, said second W/O circuitry including at
`least one input buffer having an electrical connection to
`said first input, said second J/O circuitry including an
`output buffer corresponding to said input buffer and
`having an electrical connection to a second input.
`2. The multi-voltage circuit according to claim 1, wherein
`said first I/O circuitry includes at least one input buffer and
`a corresponding output buffer, both of said buffers being
`connected to said first input.
`3. The multi-voltage circuit according to claim 2, wherein
`said input buffers of said first and second I/O circuitry are
`TTL compatible.
`4. The multi-voltage circuit according to claim 1, wherein
`said first input is an input ofelectrical power at a voltage
`level of 5 volts.
`
`20
`
`25
`
`30
`
`40
`
`45
`
`55
`
`65
`
`8
`5. The multi-voltage circuit according to claim 1, wherein
`said second inputis an inputof electrical powerat a voltage
`level of 3.3 volts.
`6. The multi-voltage circuit according to claim 1, wherein
`said first and second I/O circuitry are respectively fabricated
`in first and second regions of a perimeter of a semiconductor
`chip.
`7. A multi-voltage semiconductor chip, comprising:
`core circuitry having an operating voltage equal to a first
`voltage level;
`first and second groupsofinput and outputbuffercircuits,
`said first and second groups of input and outputbuffers
`coupled to said core circuitry to provide data access
`between said core circuitry and external devices, each
`of said input buffers of said first and second groups
`having an operating voltage equal to said first voltage
`level;
`first connection means for supplying power, said output
`buffers of said first group having a power attachmentto
`said first connection mcans; and
`second connection means for supplying power, said out-
`put buffers of said second group having a power
`attachment to said second connection means;
`said output buffers of said first and second groups being
`operable at said first voltage level and at a second
`voltage level, respectively, said second voltage level
`being less than said first voltage level;
`said first and second connection means for supplying
`powereach capable of being user-selectably coupled to
`one of a first power supply and a second powersupply,
`said second power supply being operative at said
`second voltage level.
`8. The multi-voltage semiconductor chip of claim 7,
`further including at least a third group of input and output
`buffers coupledto said core circuitry to provide data access
`between said core circuitry and external devices, said input
`buffers of said third group having an operating voltage equal
`to said first voltage level, each of said output buffers of said
`third group capable of being user-selectably coupled to one
`of said first and second powersupplies.
`9. The multi-voltage semiconductor chip of claim 7,
`wherein said core circuitry is effective for performing logic
`functions.
`10. The multi-voltage semiconductor chip of claim 7,
`wherein said core circuitry is effective for performing
`memory functions,
`11. The multi-voltage semiconductor chip of claim 7,
`wherein said first voltage level is substantially equal to 5
`volts, and said second voltage level is substantially equal to
`3.3 volts.
`12. A method of fabricating a multi-voltage semiconduc-
`tor chip, comprising the steps of:
`selecting a high voltage level and a low voltage level so
`that the value of said high voltage level is greater than
`the value of said low voltage level;
`fabricating a core of electronic circuitry to operate at said
`high voltage icvel;
`selecting a plurality of regions along the periphery of said
`core of electronic circuitry; and
`disposing a groupof I/O circuitry in each of said plurality
`of regions;
`said step of disposing including the steps of forming input
`buffers in each of said plurality of regions and provid-
`ing powerto all of said input buffers to operate at said
`high voltage Icvel;
`
`8
`
`

`

`5,508,653
`
`9
`said step of disposing including the steps of forming
`output buffers in each of said plurality of regions,
`forming a power connection point
`in each of said
`plurality of regions and for cach of said plurality of
`regions coupling eachof said output buffers within said >
`et
`the
`8
`ue
`di
`region to
`© power connection point corresponding to
`said region.
`.
`13. The method of fabricating a multi-voltage chip of
`claim 12, wherein said step of selecting a high voltage value 10
`includes selecting a voltage value substantially equal to 5
`
`10
`volts, and said step of selecting a low voltage valuc includes
`selecting a voltage value substantially equal to 3.3 volts.
`14. The method of fabricating a multi-voltage chip of
`claim 12, wherein said step of fabricating said core of
`electronic circuitry includes forming a core power connec-
`tion point, coupling said core of electronic circuitry to said
`core power connection point and connecting said core power
`connection point to a power source providing a voltage
`equal to said first voltage level.
`
`*
`
`Oe RR
`
`9
`
`