8/3/2019
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`("low noise amplifiers") before:priority:20120525 - Google Patents
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`("low noise ampliers") before:priority:20120
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`Modied derivative superposition method for linearizing FET low-noise ampliers
`Google Scholar • 99.51.244.77:823 • Aparin V • IEEE Transactions on Microwave Theory and Techniques
`Publication 2005
`Intermodulation distortion in eld-effect transistors (FETs) at RF frequencies is analyzed using the Volterra-series analysis.
`The degrading effect of the circuit reactances on the maximum IIP 3 in the conventional derivative-superposition (DS)
`method is explained. The …
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`A noise optimization technique for integrated low-noise ampliers
`Google Scholar • www.eng.auth.gr • Goo J • IEEE Journal of Solid-State Circuits
`Publication 2002
`Based on measured four-noise parameters and two-port noise theory, considerations for noise optimization of integrated
`low-noise amplier (LNA) designs are presented. If arbitrary values of source impedance are allowed, optimal noise
`performance of the LNA is obtained …
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`Design of microwave GaAs MESFET's for broad-band low-noise ampliers
`Google Scholar • pdfs.semanticscholar.org • Fukui H • IEEE Transactions on microwave theory and techniques
`Publication 1979
`As a basis for designing GaAs MESFET's for broad-band low-noise ampliers, the fundamental relationships between basic
`device parameters, and two-port noise parameters are investigated in a semiempirical manner. A set of four noise
`parameters are shown as …
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`Dual-band high-linearity variable-gain low-noise ampliers for wireless applications
`Google Scholar • ieeexplore.ieee.org • Fong K • 1999 IEEE International Solid-State Circuits Conference. Digest of Technical
`Papers. ISSCC. First Edition (Cat. No. 99CH36278)
`Publication 1999
`A typical dual-band RF receiver front-end architecture is shown. The low-noise ampliers (LNA) should have low noise
`gures to increase sensitivity of the receivers, and high linearity to prevent interference from undesired adjacent-channel
`signals. To increase the …
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`The design of low-noise ampliers
`Google Scholar • ieeexplore.ieee.org • Netzer Y • Proceedings of the IEEE
`Publication 1981
`The essential theory and practical considerations for the design of low-noise ampliers are gathered and organized to a
`uniform presentation. The relevant material is quite simple and straightforward, hopefully bringing within the reach of the
`interested circuit designer the" art" …
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`Linearization techniques for CMOS low noise ampliers: A tutorial
`Google Scholar • ieeexplore.ieee.org • Zhang H • IEEE Transactions on Circuits and Systems I: Regular Papers
`Publication 2010
`This tutorial catalogues and analyzes previously reported CMOS low noise amplier (LNA) linearization techniques. These
`techniques comprise eight categories: a) feedback; b) harmonic termination; c) optimum biasing; d) feedforward; e)
`derivative superposition (DS); f) …
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`Using capacitive cross-coupling technique in RF low noise ampliers and down-
`conversion mixer design
`Google Scholar • pure.tue.nl • Zhuo W • Proceedings of the 26th European Solid-State Circuits Conference
`Publication 2000
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`https://patents.google.com/?q=("low+noise+amplifiers")&before=priority:20120525&scholar&oq=("low+noise+amplifiers")+before:priority:20120525
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`1/3
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`IPR2019-00129
`Qualcomm 2023, p. 1
`
`

`

`("low noise amplifiers") before:priority:20120525 - Google Patents
`8/3/2019
`We report an approach to improve the noise performance of RF low noise ampliers (LNAs) and down-conversion mixers.
`The technique we described here is based on capacitive cross-coupling across the two sides of a differential input stage. A
`LNA and mixer have been …
`
`Performance of dual-gate GaAs MESFET's as gain-controlled low-noise ampliers and
`high-speed modulators
`Google Scholar • ieeexplore.ieee.org • Liechti C • IEEE Transactions on Microwave Theory and Techniques
`Publication 1975
`This paper describes the microwave performance of GaAs FET's with two 1-mu m Schottky- barrier gates (dual-gate
`MESFET). At 10 GHz the MESFET, with an inductive second-gate termination, exhibits an 18-dB gain with--26-dB reverse
`isolation. Variation of the second …
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`Concurrent multiband low-noise ampliers-theory, design, and applications
`Google Scholar • authors.library.caltech.edu • Hashemi H • IEEE Transactions on Microwave Theory and techniques
`Publication 2002
`The concept of concurrent multiband low-noise-ampliers (LNAs) is introduced. A systematic way to design concurrent
`multiband integrated LNAs in general is developed. Applications of concurrent multiband LNAs in concurrent multiband
`receivers together with receiver …
`
`Cryogenic wide-band ultra-low-noise IF ampliers operating at ultra-low DC power
`Google Scholar • www.physics.orst.edu • Wadefalk N • IEEE Transactions on Microwave Theory and Techniques
`Publication 2003
`This paper describes cryogenic broad-band ampliers with very low power consumption and very low noise for the 4-8-GHz
`frequency range. At room temperature, the two-stage InP- based amplier has a gain of 27 dB and a noise temperature of
`31 K with a power …
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`About 24,933 results
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`CPCs
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`Texas Instruments Incorporated
`H01L H01L27/06 H01L27/0605 H01L27/04
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`Broadcom Corporation
`H03G3/30 H03G3/20 H03G3 H03G3/00
`
`Trw Inc.
`H03F2200/372 H03F3/602 H03F2200/198 H03F2200/00
`
`Hughes Aircraft Company
`H01Q H01L29/66462 G01S13/02 G01S2013/0245
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`Sharp Kabushiki Kaisha
`H04H40/18 H04H40/00 H04H40/27 H04H40/90
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`1.3%
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`0.7%
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`https://patents.google.com/?q=("low+noise+amplifiers")&before=priority:20120525&scholar&oq=("low+noise+amplifiers")+before:priority:20120525
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`2/3
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`IPR2019-00129
`Qualcomm 2023, p. 2
`
`

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`8/3/2019
`
`("low noise amplifiers") before:priority:20120525 - Google Patents
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`https://patents.google.com/?q=("low+noise+amplifiers")&before=priority:20120525&scholar&oq=("low+noise+amplifiers")+before:priority:20120525
`
`3/3
`
`IPR2019-00129
`Qualcomm 2023, p. 3
`
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