(19) United States
`(12) Patent Application Publication (10) Pub. No.: US 2005/0184748 A1
`(43) Pub. Date: Aug. 25, 2005
`
`Chen et al.
`
`US 20050184748A1
`
`(54)
`
`(75)
`
`PIN-TYPE PROBES FOR CONTACTING
`ELECTRONIC CIRCUITS AND METHODS
`FOR MAKING SUCH PROBES
`
`Inventors: Richard T. Chen, Burbank, CA (US);
`Ezekiel JJ. Kruglick, San Diego, CA
`(US); Vacit Arat, La Canada Hintridge,
`CA (US); Daniel I. Feinl)erg, Syltnar,
`CA (US)
`
`Correspondence Address:
`MICROFABRICA INC.
`DENNIS R. SMALLEY
`1103 W. ISABEL ST.
`BURBANK, CA 91506 (US)
`
`Assignee: Microfabrica Inc.
`
`Appl. No.:
`
`11/029,180
`
`Filed:
`
`Jan. 3, 2005
`
`60,540,511, filed on Jan. 29, 2004. Provisional appli-
`cation No. 60,682,726, filed on Jun. 23, 2004. Pro-
`visional application No. 60/540,510, filed on Jan. 29,
`2004. Provisional application No. 60533397, filed
`on Dec. 31, 2003. Provisional application No. 60,445,
`186, filed on Feb. 4, 2003. Provisional application
`No. 60/536,865, filed on Jan. 15, 2004. Provisional
`application No. 60,633,933, filed on Dec. 31, 2003.
`Provisional application No. 60,606,015, filed on Sep.
`24, 2003. Provisional application No. 60.506015,
`filed on Sep. 24, 2003. Provisional application No.
`60/533,933, filed on Dec. 31, 2003. Provisional appli-
`cation No. 60/536,865, filed on Jan. 15, 2004.
`
`Publicatlon Classification
`
`Int. CI.7 ..................................................... G01R 31/02
`(51)
`(52) U.s.ct.
`.............................................................. 324/761
`
`(57)
`
`ABSTRACT
`
`Related U.S. Appllcation Data
`
`(63)
`
`(60)
`
`Continuation-impart of application No. 105949.738,
`filed on Sep. 24, 2004, which is a continuation-in-part
`of application No. 10,772,943, filed on Feb. 4, 2004.
`
`Provisional application No. 60/533,933, filed on Dec.
`31, 2003. Provisional application No. 605536865,
`filed on Jan. 15, 2004. Provisional application No.
`
`Pin probes and pin probe arrays are provided that allow
`electric contact to he made with selected electronic circuit
`
`components. Some embodiments include one or more com-
`pliant pin elements located within a sheath. Some embodi-
`ments include pin probes that include locking or latching
`elements that may be used to 11x pin portions of probes into
`sheaths. Some embodiments provide for
`fabrication of
`probes using multi-layer electrochemical fabrication meth-
`ods.
`
`
`
`Page 1 of 31
`
`Feinmetall Exhibit 2017
`
`FormFactor, Inc. v. Feinmetall, GmbH
`IPR2019-00082
`
`

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`Patent Application Publication Aug. 25, 2005 Sheet 1 of 16
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`US 2005/0184748 A1
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`Patent Application Publication Aug. 25, 2005 Sheet 2 0f 16
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`Patent Application Publication Aug. 25, 2005 Sheet 5 0f 16
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`US 2005/0184748 A1
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`Page 6 of 31
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`Page 7 of 31
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`Patent Application Publication Aug. 25, 2005 Sheet 7 0f 16
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`Patent Application Publication Aug. 25, 2005 Sheet 8 0f 16
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`Page 9 of 31
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`Patent Application Publication Aug. 25, 2005 Sheet 9 0f 16
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`US 2005/0184748 A1
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`Page 10 of 31
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`Patent Application Publication Aug. 25, 2005 Sheet 12 0f 16
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`Patent Application Publication Aug. 25, 2005 Sheet 13 0f 16
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`US 2005/0184748 A1
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`FIG 130
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`Page 14 of 31
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`Patent Application Publication Aug. 25, 2005 Sheet 14 0f 16
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`FIG 1GB
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`Page 15 of 31
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`Patent Application Publication Aug. 25, 2005 Sheet 15 0f 16
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`Page 16 of 31
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`Patent Application Publication Aug. 25, 2005 Sheet 16 0f 16
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`Page 17 of 31
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`US 2005/0184748 A1
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`
`
`
`
`Aug. 25, 2005
`
`
`
`
`
`PIN-TYPE PROBES FOR CONTACTING
`
`
`
`
`ELECTRONIC CIRCUITS AND METHODS FOR
`
`
`
`
`MAKING SUCH PROBES
`
`
`
`
`
`
`RELATED APPLICATIONS
`
`
`
`
`[0001] This application claims benefit of US. App. Nos.
`
`
`
`
`
`
`
`
`
`60/533,933, 60/536,865, 60/540,511, 60/582,726, 60/540,
`
`
`
`
`
`510, and 60/533,897. This application is a continuation-in-
`
`
`
`
`
`
`
`part of US. application Ser. No. 10/949,738 which in turn is
`
`
`
`
`
`
`
`
`
`
`
`a continuation-in-part of Ser. No. 10/772,943, which in turn
`
`
`
`
`
`
`
`
`
`claims benefit of US. application Nos. 60/445,186; 60/506,
`
`
`
`
`
`
`
`
`015; 60/533,933, and 60/536,865; furthermore the ’738
`
`
`
`
`
`
`
`application claims benefit of US. App. Nos. 60/506,015;
`
`
`
`
`
`
`
`
`60/533,933; and 60/536,865. Each of these applications,
`
`
`
`
`
`
`
`including any appendices attached thereto, is incorporated
`
`
`
`
`
`
`
`herein by reference as if set forth in full herein.
`
`
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`
`
`FIELD OF THE INVENTION
`
`
`
`
`
`
`invention relate to
`[0002] Embodiments of the present
`
`
`
`
`
`
`
`
`testing of
`microprobes (e.g.
`for use in the wafer level
`
`
`
`
`
`
`
`
`
`
`integrated circuits), and more particularly to pin-like micro-
`
`
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`
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`probes (i.e. microprobes that have vertical heights that are
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`much greater than their widths. In some embodiments, the
`
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`
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`microprobes are produced by an electrochemical fabrication.
`
`
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`
`
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`BACKGROUND OF THE INVENTION
`
`
`
`
`
`
`[0003] A technique for forming three-dimensional struc-
`
`
`
`
`
`
`tures (e.g. parts, components, devices, and the like) from a
`
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`
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`
`
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`plurality of adhered layers was invented by Adam L. Cohen
`
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`
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`and is known as Electrochemical Fabrication. It is being
`
`
`
`
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`
`
`
`commercially pursued by Microfabrica Inc.
`(formerly
`
`
`
`
`
`
`MEMGen® Corporation) of Burbank, Calif. under the name
`
`
`
`
`
`
`
`
`EFABTM. This technique was described in US. Pat. No.
`
`
`
`
`
`
`
`
`
`6,027,630, issued on Feb. 22, 2000. This electrochemical
`
`
`
`
`
`
`
`
`deposition technique allows the selective deposition of a
`
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`
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`
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`material using a unique masking technique that involves the
`
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`use of a mask that includes patterned conformable material
`
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`on a support structure that is independent of the substrate
`
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`onto which plating will occur. When desiring to perform an
`
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`
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`electrodeposition using the mask, the conformable portion
`
`
`
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`
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`of the mask is brought into contact with a substrate while in
`
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`the presence of a plating solution such that the contact of the
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`conformable portion of the mask to the substrate inhibits
`
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`deposition at selected locations. For convenience,
`these
`
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`masks might be generically called conformable contact
`
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`
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`masks; the masking technique may be generically called a
`
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`
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`
`
`conformable contact mask plating process. More specifi-
`
`
`
`
`
`
`in the terminology of Microfabrica Inc. (formerly
`cally,
`
`
`
`
`
`
`
`
`MEMGen® Corporation) of Burbank, Calif. such masks
`
`
`
`
`
`
`
`have come to be known as INSTANT MASKSTM and the
`
`
`
`
`
`
`
`
`
`
`process known as INSTANT MASKINGTM or INSTANT
`
`
`
`
`
`
`
`MASKTM plating. Selective depositions using conformable
`
`
`
`
`
`
`contact mask plating may be used to form single layers of
`
`
`
`
`
`
`
`
`
`
`
`material or may be used to form multi-layer structures. The
`
`
`
`
`
`
`
`
`
`
`teachings of the ’630 patent are hereby incorporated herein
`
`
`
`
`
`
`
`
`
`by reference as if set forth in full herein. Since the filing of
`
`
`
`
`
`
`
`
`
`
`
`
`
`the patent application that led to the above noted patent,
`
`
`
`
`
`
`
`
`
`
`various papers about conformable contact mask plating (i.e.
`
`
`
`
`
`
`
`
`INSTANT MASKING) and electrochemical
`fabrication
`
`
`
`
`
`have been published:
`
`
`
`
`[0004]
`(1) A. Cohen, G. Zhang, F. Tseng, F. Mans-
`
`
`
`
`
`
`
`
`
`feld, U. Frodis and P. Will, “EFAB: Batch production
`
`
`
`
`
`
`
`
`
`
`
`Page 18 of 31
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`of functional, fully-dense metal parts with micro-
`
`
`
`
`
`
`scale features”, Proc. 9th Solid Freeform Fabrica-
`
`
`
`
`
`
`tion, The University of Texas at Austin, p161, Aug.
`
`
`
`
`
`
`
`
`
`
`1998.
`
`
`[0005]
`(2) A. Cohen, G. Zhang, F. Tseng, F. Mans-
`
`
`
`
`
`
`
`
`
`feld, U. Frodis and P. Will, “EFAB: Rapid, Low-Cost
`
`
`
`
`
`
`
`
`
`Desktop Micromachining of High Aspect Ratio True
`
`
`
`
`
`
`
`3-D MEMS”, Proc. 12th IEEE Micro Electro
`
`
`
`
`
`
`
`Mechanical Systems Workshop, IEEE, p244, Janu-
`
`
`
`
`
`ary 1999.
`
`
`
`[0006]
`(3) A. Cohen, “3-D Micromachining by Elec-
`
`
`
`
`
`
`
`trochemical Fabrication”, Micromachine Devices,
`
`
`
`
`March 1999.
`
`
`
`
`
`[0007]
`(4) G. Zhang, A. Cohen, U. Frodis, F. Tseng,
`
`
`
`
`
`
`
`
`
`
`F. Mansfeld, and P. Will, “EFAB: Rapid Desktop
`
`
`
`
`
`
`
`
`Manufacturing of True 3-D Microstructures”, Proc.
`
`
`
`
`
`
`2nd International Conference on Integrated Micro-
`
`
`
`
`
`Nanotechnology for Space Applications, The Aero-
`
`
`
`
`
`space Co., Apr. 1999.
`
`
`
`
`
`[0008]
`(5) F. Tseng, U. Frodis, G. Zhang, A. Cohen,
`
`
`
`
`
`
`
`
`
`F. Mansfeld, and P. Will, “EFAB: High Aspect Ratio,
`
`
`
`
`
`
`
`
`Arbitrary 3-D Metal Microstructures using a Low-
`
`
`
`
`
`
`Cost Automated Batch Process”, 3rd International
`
`
`
`
`
`
`Workshop on High Aspect Ratio MicroStructure
`
`
`
`
`
`
`Technology (HARMST’99), June 1999.
`
`
`
`
`
`
`
`
`[0009]
`(6) A. Cohen, U. Frodis, F. Tseng, G. Zhang,
`
`
`
`
`
`
`
`
`
`F. Mansfeld, and P. Will, “EFAB: Low-Cost, Auto-
`
`
`
`
`
`
`
`mated Electrochemical Batch Fabrication of Arbi-
`
`
`
`
`
`trary 3-D Microstructures”, Micromachining and
`
`
`
`
`Microfabrication Process Technology, SPIE 1999
`
`
`
`
`Symposium on Micromachining and Microfabrica-
`
`
`
`
`tion, September 1999.
`
`
`
`
`
`
`
`
`
`[0010]
`(7) F. Tseng, G. Zhang, U. Frodis, A. Cohen,
`
`
`
`
`
`
`
`
`
`F. Mansfeld, and P. Will, “EFAB: High Aspect Ratio,
`
`
`
`
`
`
`
`
`Arbitrary 3-D Metal Microstructures using a Low-
`
`
`
`
`
`
`Cost Automated Batch Process”, MEMS Sympo-
`
`
`
`
`
`sium, ASME 1999 International Mechanical Engi-
`
`
`
`
`
`neering Congress and Exposition, November, 1999.
`
`
`
`
`
`
`
`
`
`
`
`(8) A. Cohen, “Electrochemical Fabrication
`[0011]
`
`
`
`
`
`
`(EFABTM)”, Chapter 19 of The MEMS Handbook,
`
`
`
`
`
`
`
`edited by Mohamed Gad-EI-Hak, CRC Press, 2002.
`
`
`
`
`
`
`
`
`[0012]
`(9) Microfabrication—Rapid Prototyping’s
`
`
`
`Killer Application”, pages 1-5 of the Rapid Proto-
`
`
`
`
`
`
`
`typing Report, CAD/CAM Publishing, Inc., June
`
`
`
`
`
`
`1999.
`
`
`
`
`[0013] The disclosures of these nine publications are
`
`
`
`
`
`
`
`
`hereby incorporated herein by reference as if set forth in full
`
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`herein.
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`[0014] The electrochemical deposition process may be
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`carried out in a number of different ways as set forth in the
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`above patent and publications. In one form, this process
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`involves the execution of three separate operations during
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`the formation of each layer of the structure that is to be
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`formed:
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`[0015]
`1. Selectively depositing at least one material
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`by electrodeposition upon one or more desired
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`regions of a substrate.
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`Page 18 of 31
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`US 2005/0184748 A1
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`[0016]
`2. Then, blanket depositing at least one addi-
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`tional material by electrodeposition so that the addi-
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`tional deposit covers both the regions that were
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`previously selectively deposited onto,
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`regions of the substrate that did not receive any
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`previously applied selective depositions.
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`[0017]
`3. Finally, planarizing the materials deposited
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`during the first and second operations to produce a
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`smoothed surface of a first layer of desired thickness
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`having at least one region containing the at least one
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`material and at least one region containing at least
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`the one additional material.
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`layer, one or more
`[0018] After formation of the first
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`additional layers may be formed adjacent to the immediately
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`preceding layer and adhered to the smoothed surface of that
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`preceding layer. These additional
`layers are formed by
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`repeating the first through third operations one or more times
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`wherein the formation of each subsequent layer treats the
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`previously formed layers and the initial substrate as a new
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`and thickening substrate.
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`[0019] Once the formation of all layers has been com-
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`pleted, at least a portion of at least one of the materials
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`deposited is generally removed by an etching process to
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`expose or release the three-dimensional structure that was
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`intended to be formed.
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`[0020] The preferred method of performing the selective
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`electrodeposition involved in the first operation is by con-
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`formable contact mask plating. In this type of plating, one or
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`more conformable contact (CC) masks are first formed. The
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`CC masks include a support structure onto which a patterned
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`conformable dielectric material is adhered or formed. The
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`conformable material for each mask is shaped in accordance
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`with a particular cross-section of material to be plated. At
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`least one CC mask is needed for each unique cross-sectional
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`pattern that is to be plated.
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`[0021] The support for a CC mask is typically a plate-like
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`structure formed of a metal that is to be selectively electro-
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`plated and from which material to be plated will be dis-
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`solved. In this typical approach, the support will act as an
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`anode in an electroplating process.
`In an alternative
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`approach, the support may instead be a porous or otherwise
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`perforated material through which deposition material will
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`pass during an electroplating operation on its way from a
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`distal anode to a deposition surface. In either approach, it is
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`possible for CC masks to share a common support, i.e. the
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`patterns of conformable dielectric material for plating mul-
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`tiple layers of material may be located in different areas of
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`a single support structure. When a single support structure
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`contains multiple plating patterns,
`the entire structure is
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`referred to as the CC mask while the individual plating
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`masks may be referred to as “submasks”. In the present
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`application such a distinction will be made only when
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`relevant to a specific point being made.
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`[0022]
`In preparation for performing the selective depo-
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`sition of the first operation, the conformable portion of the
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`CC mask is placed in registration with and pressed against
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`a selected portion of the substrate (or onto a previously
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`formed layer or onto a previously deposited portion of a
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`layer) on which deposition is to occur. The pressing together
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`of the CC mask and substrate occur in such a way that all
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`openings,
`in the conformable portions of the CC mask
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`Page 19 of 31
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`contain plating solution. The conformable material of the
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`CC mask that contacts the substrate acts as a barrier to
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`electrodeposition while the openings in the CC mask that are
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`filled with electroplating solution act as pathways for trans-
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`ferring material from an anode (e.g. the CC mask support)
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`to the non-contacted portions of the substrate (which act as
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`a cathode during the plating operation) when an appropriate
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`potential and/or current are supplied.
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`[0023] An example of a CC mask and CC mask plating are
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`shown in FIGS. 1A-1C. FIG. 1A shows a side view of a CC
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`mask 8 consisting of a conformable or deformable (e.g.
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`elastomeric) insulator 10 patterned on an anode 12. The
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`anode has two functions. FIG. 1A also depicts a substrate 6
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`separated from mask 8. One is as a supporting material for
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`the patterned insulator 10 to maintain its integrity and
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`alignment since the pattern may be topologically complex
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`(e.g., involving isolated “islands” of insulator material). The
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`other function is as an anode for the electroplating operation.
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`CC mask plating selectively deposits material 22 onto a
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`substrate 6 by simply pressing the insulator against the
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`substrate then electrodepositing material through apertures
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`26a and 26b in the insulator as shown in FIG. 1B. After
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`deposition, the CC mask is separated, preferably non-de-
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`structively, from the substrate 6 as shown in FIG. 1C. The
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`CC mask plating process is distinct from a “through-mask”
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`plating process in that in a through-mask plating process the
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`separation of the masking material from the substrate would
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`occur destructively. As with through-mask plating, CC mask
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`plating deposits material selectively and simultaneously
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`over the entire layer. The plated region may consist of one
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`or more isolated plating regions where these isolated plating
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`regions may belong to a single structure that is being formed
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`or may belong to multiple structures that are being formed
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`simultaneously. In CC mask plating as individual masks are
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`not intentionally destroyed in the removal process, they may
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`be usable in multiple plating operations.
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`[0024] Another example of a CC mask and CC mask
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`plating is shown in FIGS. 1D-1F. FIG. 1D shows an anode
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`12' separated from a mask 8'
`that
`includes a patterned
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`conformable material 10' and a support structure 20. FIG.
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`1D also depicts substrate 6 separated from the mask 8'. FIG.
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`1E illustrates the mask 8' being brought into contact with the
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`substrate 6. FIG. 1F illustrates the deposit 22' that results
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`from conducting a current from the anode 12' to the substrate
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`6. FIG. 1G illustrates the deposit 22' on substrate 6 after
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`separation from mask 8'. In this example, an appropriate
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`electrolyte is located between the substrate 6 and the anode
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`12' and a current of ions coming from one or both of the
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`solution and the anode are conducted through the opening in
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`the mask to the substrate where material is deposited. This
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`type of mask may be referred to as an anodeless INSTANT
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`MASKTM (AIM) or as an anodeless conformable contact
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`(ACC) mask.
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`[0025] Unlike through-mask plating, CC mask plating
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`allows CC masks to be formed completely separate from the
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`fabrication of the substrate on which plating is to occur (e.g.
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`separate from a three-dimensional (3D) structure that is
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`being formed). CC masks may be formed in a variety of
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`ways, for example, a photolithographic process may be
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`used. All masks can be generated simultaneously, prior to
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`structure fabrication rather than during it. This separation
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`makes possible a simple,
`low-cost, automated, self-con-
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`tained, and internally-clean “desktop factory” that can be
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`Page 19 of 31
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`US 2005/0184748 A1
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`Aug. 25, 2005
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`installed almost anywhere to fabricate 3D structures, leaving
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`any required clean room processes, such as photolithogra-
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`phy to be performed by service bureaus or the like.
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`[0026] An example of the electrochemical fabrication pro-
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`cess discussed above is illustrated in FIGS. 2A-2F. These
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`figures show that the process involves deposition of a first
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`material 2 which is a sacrificial material and a second
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`material 4 which is a structural material. The CC mask 8, in
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`this example,
`includes a patterned conformable material
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`(e.g. an elastomeric dielectric material) 10 and a support 12
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`which is made from deposition material 2. The conformal
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`portion of the CC mask is pressed against substrate 6 with
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`a plating solution 14 located within the openings 16 in the
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`conformable material 10. An electric current, from power
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`supply 18, is then passed through the plating solution 14 via
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`(a) support 12 which doubles as an anode and (b) substrate
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`6 which doubles as a cathode. FIG. 2A, illustrates that the
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`passing of current causes material 2 within the plating
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`solution and material 2 from the anode 12 to be selectively
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`transferred to and plated on the cathode 6. After electroplat-
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`ing the first deposition material 2 onto the substrate 6 using
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`CC mask 8, the CC mask 8 is removed as shown in FIG. 2B.
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`FIG. 2C depicts the second deposition material 4 as having
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`been blanket-deposited (i.e. non-selectively deposited) over
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`the previously deposited first deposition material 2 as well as
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`over the other portions of the substrate 6. The blanket
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`deposition occurs by electroplating from an anode (not
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`shown), composed of the second material, through an appro-
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`priate plating solution (not shown), and to the cathode/
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`substrate 6. The entire two-material layer is then planarized
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`to achieve precise thickness and flatness as shown in FIG.
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`2D. After repetition of this process for all
`layers,
`the
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`multi-layer structure 20 formed of the second material 4 (i.e.
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`structural material) is embedded in first material 2 (i.e.
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`sacrificial material) as shown in FIG. 2E. The embedded
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`structure is etched to yield the desired device, i.e. structure
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`20, as shown in FIG. 2F.
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`[0027] Various components of an exemplary manual elec-
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`trochemical fabrication system 32 are shown in FIGS.
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`3A-3C. The system 32 consists of several subsystems 34,
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`36, 38, and 40. The substrate holding subsystem 34 is
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`depicted in the upper portions of each of FIGS. 3A-3C and
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`includes several components: (1) a carrier 48, (2) a metal
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`substrate 6 onto which the layers are deposited, and (3) a
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`linear slide 42 capable of moving the substrate 6 up and
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`down relative to the carrier 48 in response to drive force
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`from actuator 44. Subsystem 34 also includes an indicator 46
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`for measuring differences in vertical position of the substrate
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`which may be used in setting or determining layer thick-
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`nesses and/or deposition thicknesses. The subsystem 34
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`further includes feet 68 for carrier 48 which can be precisely
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`mounted on subsystem 36.
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`[0028] The CC mask subsystem 36 shown in the lower
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`portion of FIG. 3A includes several components: (1) a CC
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`mask 8 that is actually made up of a number of CC masks
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`(i.e. submasks) that share a common support/anode 12, (2)
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`precision X-stage 54, (3) precision Y—stage 56, (4) frame 72
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`on which the feet 68 of subsystem 34 can mount, and (5) a
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`tank 58 for containing the electrolyte 16. Subsystems 34 and
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`36 also include appropriate electrical connections (not
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`shown) for connecting to an appropriate power source for
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`driving the CC masking process.
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`Page 20 of 31
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`[0029] The blanket deposition subsystem 38 is shown in
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`the lower portion of FIG. 3B and includes several compo-
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`nents: (1) an anode 62, (2) an electrolyte tank 64 for holding
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`plating solution 66, and (3) frame 74 on which the feet 68
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`of subsystem 34 may sit. Subsystem 38 also includes appro-
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`priate electrical connections (not shown) for connecting the
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`anode to an appropriate power supply for driving the blanket
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`deposition process.
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`[0030] The planarization subsystem 40 is shown in the
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`lower portion of FIG. 3C and includes a lapping plate 52
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`and associated motion and control systems (not shown) for
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`planarizing the depositions.
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`[0031] Another method for forming microstructures from
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`electroplated metals (i.e. using electrochemical fabrication
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`techniques) is taught in US. Pat. No. 5,190,637 to Henry
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`Guckel, entitled “Formation of Microstructures by Multiple
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`Level Deep X-ray Lithography with Sacrificial Metal lay-
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`ers”. This patent teaches the formation of metal structure
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`utilizing mask exposures. A first layer of a primary metal is
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`electroplated onto an exposed plating base to fill a void in a
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`photoresist, the photoresist is then removed and a secondary
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`metal is electroplated over the first layer and over the plating
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`base. The exposed surface of the secondary metal is then
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`machined down to a height which exposes the first metal to
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`produce a flat uniform surface extending across the both the
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`primary and secondary metals. Formation of a second layer
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`may then begin by applying a photoresist layer over the first
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`layer and then repeating the process used to produce the first
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`layer. The process is then repeated until the entire structure
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`is formed and the secondary metal is removed by etching.
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`The photoresist is formed over the plating base or previous
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`layer by casting and the voids in the photoresist are formed
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`by exposure of the photoresist through a patterned mask via
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`X-rays or UV radiation.
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`[0032] Electrochemical Fabrication provides the ability to
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`form prototypes and commercial quantities of miniature
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`objects, parts, structures, devices, and the like at reasonable
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`costs and in reasonable times.
`In fact, Electrochemical
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`Fabrication is an enabler for the formation of many struc-
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`tures that were hitherto impossible to produce. Electro-
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`chemical Fabrication opens the spectrum for new designs
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`and products in many industrial fields. Even though Elec-
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`trochemical Fabrication offers this new capability and it is
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`understood that Electrochemical Fabrication techniques can
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`be combined with designs and structures known within
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`various fields to produce new structures, certain uses for
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`Electrochemical Fabrication provide designs, structures,
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`capabilities and/or features not known or obvious in view of
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`the state of the art.
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`[0033] Aneed exists in various fields for miniature devices
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`having improved characteristics, reduced fabrication times,
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`reduced fabrication costs, simplified fabrication processes,
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`and/or more independence between geometric configuration
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`and the selected fabrication process. Aneed also exists in the
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`field of miniature device fabrication for improved fabrica-
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`tion methods and apparatus.
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`SUMMARY OF THE INVENTION
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`[0034]
`It is an object of some embodiments of the inven-
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`tion to provide pin probes (e.g. pogo pin probes) with
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`improved characteristics.
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`Page 20 of 31
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`

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`US 2005/0184748 A1
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`Aug. 25, 2005
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`[0035]
`It is an object of some embodiments of the inven-
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`tion to provide pin probes that are more reliable.
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`[0036]
`It is an object some embodiments of the invention
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`to provide improved methods for fabricating pin probes.
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`[0037] Other objects and advantages of various aspects of
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`the invention will be apparent to those of skill in the art upon
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`review of the teachings herein. The various aspects of the
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`invention, set forth explicitly herein or otherwise ascertained
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`from the teachings herein, may address one or more of the
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`above objects alone or in combination, or alternatively may
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`address some other object of the invention ascertained from
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`the teachings herein. It is not necessarily intended that all
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`objects be addressed by any single aspect of the invention
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`even though that may be the case with regard to some
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`aspects.
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`[0038] A first aspect of the invention provides a pin probe
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`for making electrical contact to an electronic circuit element